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JPH04369231A - Fabrication of semiconductor device - Google Patents

Fabrication of semiconductor device

Info

Publication number
JPH04369231A
JPH04369231A JP14573691A JP14573691A JPH04369231A JP H04369231 A JPH04369231 A JP H04369231A JP 14573691 A JP14573691 A JP 14573691A JP 14573691 A JP14573691 A JP 14573691A JP H04369231 A JPH04369231 A JP H04369231A
Authority
JP
Japan
Prior art keywords
resin
sealing
dam
thickness
encapsulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14573691A
Other languages
Japanese (ja)
Inventor
Katsunobu Mori
勝信 森
Mitsuaki Osono
大園 光昭
Takaaki Tsuda
津田 孝明
Takamichi Maeda
前田 崇道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14573691A priority Critical patent/JPH04369231A/en
Publication of JPH04369231A publication Critical patent/JPH04369231A/en
Pending legal-status Critical Current

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide an encapsulation technique by which regions to be encapsulated and the thickness of an encapsulation are readily controlled without producing a resin dam. CONSTITUTION:By the use of two types of fluid resins, possessing the same curing characteristics, but being different from each other in thixotropic properties, a resin 5 with high thixotropic properties is used to control regions to be encapsulated, and another resin 4, with low thixotropic properties, is used to control the thickness of an encapsulation.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は半導体装置の製造方法に
関するものであり、特に、半導体素子の封止方法に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of sealing a semiconductor element.

【0002】0002

【従来の技術】半導体素子の封止用液状樹脂による封止
方法として、一般的にポッティング方式,印刷方式が主
流であるが、これらはいずれも、液状樹脂を、半導体素
子及びインナーリードを含むテープキャリアの封止領域
全体に塗布し、熱硬化によって成型を行っている。
[Prior Art] Generally speaking, potting methods and printing methods are mainstream as methods for sealing semiconductor elements with liquid resin. It is applied to the entire sealing area of the carrier and molded by heat curing.

【0003】0003

【発明が解決しようとする課題】この際に、樹脂の液体
性状のチキソトロピー性の低い、広がり易い樹脂を用い
ると、ポッティング後の広がりは大きくなり、封止厚を
薄くすることはできるが、封止領域の制御が困難となる
(図3参照)。
[Problems to be Solved by the Invention] In this case, if a liquid resin with low thixotropy and easy to spread is used, the spreading after potting will be large, and although the sealing thickness can be reduced, the sealing This makes it difficult to control the stopping area (see Figure 3).

【0004】逆に、チキソトロピー性の高い、広がりに
くい樹脂を用いると、ポッティング後の広がりが小さい
ために封止領域を小さくすることは可能であるが、薄く
塗布することは困難であり、封止厚が厚くなる(図4参
照)。
On the other hand, if a resin with high thixotropy and difficult to spread is used, it is possible to reduce the sealing area because the spread after potting is small, but it is difficult to apply a thin layer, and the sealing area is small. The thickness increases (see Figure 4).

【0005】また、パターン上に樹脂ダムを設け、チキ
ソトロピー性の低い樹脂を使用することで封止領域の制
御を行う方法(図5)があるが  樹脂ダムを設ける工
程が必要となること、樹脂ダムと封止樹脂の特性の違い
により、信頼性上、問題が発生するなどの欠点がある。
[0005]Also, there is a method (Fig. 5) in which the sealing area is controlled by providing a resin dam on the pattern and using a resin with low thixotropy, but this method requires a step of providing the resin dam, and There are drawbacks such as reliability problems due to differences in the characteristics of the dam and the sealing resin.

【0006】本発明は上記従来技術の欠点を解消、特に
、樹脂ダムを作成することなく、封止領域、封止厚の制
御を容易に行う封止方法の提供を目的とする。
SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned drawbacks of the prior art, and particularly to provide a sealing method in which the sealing area and sealing thickness can be easily controlled without creating a resin dam.

【0007】[0007]

【課題を解決するための手段】本発明は、硬化物特性は
同一で、チキソトロピー性の異なる2種類の液状樹脂を
用いて、チキソトロピー性の高い樹脂で封止領域を制御
し、チキソトロピー性の低い樹脂で封止厚を制御するこ
とを特徴とするものである。
[Means for Solving the Problems] The present invention uses two types of liquid resins with the same cured product properties but different thixotropy, controls the sealing area with the resin with high thixotropy, and uses a resin with low thixotropy. The feature is that the sealing thickness is controlled by resin.

【0008】[0008]

【実施例】以下、実施例をテープキャリアパッケージに
て説明する。
[Example] Hereinafter, an example will be explained using a tape carrier package.

【0009】図1に本発明による封止方法の工程図を示
す。
FIG. 1 shows a process diagram of the sealing method according to the present invention.

【0010】チキソトロピー性の高い(樹脂の広がりに
くい)樹脂5をポッティング装置3による描画方式にて
封止領域周辺に塗布する(図1(a),図2)。
A resin 5 having high thixotropy (resin does not easily spread) is applied around the sealing area using a drawing method using a potting device 3 (FIGS. 1(a) and 2).

【0011】次に、チキソトロピー性の低い(樹脂の広
がり易い)樹脂4を用いて、上記チキソトロピー性の高
い樹脂5で囲った領域に塗布する(図1(b))。
Next, a resin 4 with low thixotropy (easily spreadable) is applied to the area surrounded by the resin 5 with high thixotropy (FIG. 1(b)).

【0012】硬化炉に入れ、樹脂4,樹脂5を同時に硬
化する(図1(c))。
[0012] The resin 4 and the resin 5 are placed in a curing furnace and cured at the same time (FIG. 1(c)).

【0013】樹脂のチキソトロピー性は、樹脂(例えば
、エポキシ樹脂)の充填剤(例えば、シリカ)の粒度分
布をわずかに変化させる事によって、硬化後の特性には
何ら影響を与えずに変えることが可能である。
The thixotropic properties of a resin can be changed by slightly changing the particle size distribution of the filler (eg, silica) in the resin (eg, epoxy resin) without affecting the properties after curing. It is possible.

【0014】上記実施例は、ポッティング装置で行った
が、チキソトロピー性の低い樹脂の塗布は印刷装置によ
ってもよい。
Although the above embodiments were carried out using a potting device, the coating of the resin with low thixotropy may also be performed using a printing device.

【0015】また、本発明はCOBに於いても同様に実
施可能である。
Furthermore, the present invention can be implemented in a COB as well.

【0016】[0016]

【発明の効果】本発明によれば、樹脂ダムを作製するこ
となく、封止領域、封止厚の制御を容易に行うことがで
きる封止方法を提供することができるものであり、・ 
 樹脂領域の制御の精度を向上させることができる。
[Effects of the Invention] According to the present invention, it is possible to provide a sealing method in which the sealing area and sealing thickness can be easily controlled without creating a resin dam.
The accuracy of control of the resin region can be improved.

【0017】・  硬化後は同一特性となるので、樹脂
ダムを用いた場合に比べ信頼性が向上する。
- Since the properties are the same after curing, reliability is improved compared to when a resin dam is used.

【0018】・  従来の封止装置の前にもう一台ポッ
ティング装置を併設することで、容易に製造工程を作製
でき、樹脂ダムを作成する工程を削除することができる
[0018] By installing another potting device in front of the conventional sealing device, the manufacturing process can be easily created and the step of creating a resin dam can be omitted.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明による封止工程の断面図である。FIG. 1 is a cross-sectional view of the sealing process according to the invention.

【図2】図1(a)の平面図である。FIG. 2 is a plan view of FIG. 1(a).

【図3】従来技術(チキソトロピー性の低い樹脂を用い
た場合)の断面図である。
FIG. 3 is a cross-sectional view of a conventional technique (when a resin with low thixotropy is used).

【図4】従来技術(チキソトロピー性の高い樹脂を用い
た場合)の断面図である。
FIG. 4 is a cross-sectional view of a conventional technique (when a highly thixotropic resin is used).

【図5】従来技術(樹脂ダムを用いた場合)の断面図で
ある。
FIG. 5 is a cross-sectional view of a conventional technique (when using a resin dam).

【符号の説明】[Explanation of symbols]

1  半導体素子 2  インナーリード 3  ポッティング装置 4  樹脂(チキソトロピー性の低い樹脂)5  樹脂
(チキソトロピー性の高い樹脂)6  樹脂ダム
1 Semiconductor element 2 Inner lead 3 Potting device 4 Resin (low thixotropic resin) 5 Resin (high thixotropic resin) 6 Resin dam

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  硬化物特性は同一で、液体性状の異な
る2種類の樹脂を用いて、半導体素子を封止することを
特徴とする、半導体装置の製造方法。
1. A method for manufacturing a semiconductor device, comprising sealing a semiconductor element using two types of resins having the same cured product properties but different liquid properties.
JP14573691A 1991-06-18 1991-06-18 Fabrication of semiconductor device Pending JPH04369231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14573691A JPH04369231A (en) 1991-06-18 1991-06-18 Fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14573691A JPH04369231A (en) 1991-06-18 1991-06-18 Fabrication of semiconductor device

Publications (1)

Publication Number Publication Date
JPH04369231A true JPH04369231A (en) 1992-12-22

Family

ID=15391957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14573691A Pending JPH04369231A (en) 1991-06-18 1991-06-18 Fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPH04369231A (en)

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