JPH04369231A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPH04369231A JPH04369231A JP14573691A JP14573691A JPH04369231A JP H04369231 A JPH04369231 A JP H04369231A JP 14573691 A JP14573691 A JP 14573691A JP 14573691 A JP14573691 A JP 14573691A JP H04369231 A JPH04369231 A JP H04369231A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- sealing
- dam
- thickness
- encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 4
- 230000009974 thixotropic effect Effects 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 abstract 3
- 239000012530 fluid Substances 0.000 abstract 1
- 238000004382 potting Methods 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は半導体装置の製造方法に
関するものであり、特に、半導体素子の封止方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of sealing a semiconductor element.
【0002】0002
【従来の技術】半導体素子の封止用液状樹脂による封止
方法として、一般的にポッティング方式,印刷方式が主
流であるが、これらはいずれも、液状樹脂を、半導体素
子及びインナーリードを含むテープキャリアの封止領域
全体に塗布し、熱硬化によって成型を行っている。[Prior Art] Generally speaking, potting methods and printing methods are mainstream as methods for sealing semiconductor elements with liquid resin. It is applied to the entire sealing area of the carrier and molded by heat curing.
【0003】0003
【発明が解決しようとする課題】この際に、樹脂の液体
性状のチキソトロピー性の低い、広がり易い樹脂を用い
ると、ポッティング後の広がりは大きくなり、封止厚を
薄くすることはできるが、封止領域の制御が困難となる
(図3参照)。[Problems to be Solved by the Invention] In this case, if a liquid resin with low thixotropy and easy to spread is used, the spreading after potting will be large, and although the sealing thickness can be reduced, the sealing This makes it difficult to control the stopping area (see Figure 3).
【0004】逆に、チキソトロピー性の高い、広がりに
くい樹脂を用いると、ポッティング後の広がりが小さい
ために封止領域を小さくすることは可能であるが、薄く
塗布することは困難であり、封止厚が厚くなる(図4参
照)。On the other hand, if a resin with high thixotropy and difficult to spread is used, it is possible to reduce the sealing area because the spread after potting is small, but it is difficult to apply a thin layer, and the sealing area is small. The thickness increases (see Figure 4).
【0005】また、パターン上に樹脂ダムを設け、チキ
ソトロピー性の低い樹脂を使用することで封止領域の制
御を行う方法(図5)があるが 樹脂ダムを設ける工
程が必要となること、樹脂ダムと封止樹脂の特性の違い
により、信頼性上、問題が発生するなどの欠点がある。[0005]Also, there is a method (Fig. 5) in which the sealing area is controlled by providing a resin dam on the pattern and using a resin with low thixotropy, but this method requires a step of providing the resin dam, and There are drawbacks such as reliability problems due to differences in the characteristics of the dam and the sealing resin.
【0006】本発明は上記従来技術の欠点を解消、特に
、樹脂ダムを作成することなく、封止領域、封止厚の制
御を容易に行う封止方法の提供を目的とする。SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned drawbacks of the prior art, and particularly to provide a sealing method in which the sealing area and sealing thickness can be easily controlled without creating a resin dam.
【0007】[0007]
【課題を解決するための手段】本発明は、硬化物特性は
同一で、チキソトロピー性の異なる2種類の液状樹脂を
用いて、チキソトロピー性の高い樹脂で封止領域を制御
し、チキソトロピー性の低い樹脂で封止厚を制御するこ
とを特徴とするものである。[Means for Solving the Problems] The present invention uses two types of liquid resins with the same cured product properties but different thixotropy, controls the sealing area with the resin with high thixotropy, and uses a resin with low thixotropy. The feature is that the sealing thickness is controlled by resin.
【0008】[0008]
【実施例】以下、実施例をテープキャリアパッケージに
て説明する。[Example] Hereinafter, an example will be explained using a tape carrier package.
【0009】図1に本発明による封止方法の工程図を示
す。FIG. 1 shows a process diagram of the sealing method according to the present invention.
【0010】チキソトロピー性の高い(樹脂の広がりに
くい)樹脂5をポッティング装置3による描画方式にて
封止領域周辺に塗布する(図1(a),図2)。A resin 5 having high thixotropy (resin does not easily spread) is applied around the sealing area using a drawing method using a potting device 3 (FIGS. 1(a) and 2).
【0011】次に、チキソトロピー性の低い(樹脂の広
がり易い)樹脂4を用いて、上記チキソトロピー性の高
い樹脂5で囲った領域に塗布する(図1(b))。Next, a resin 4 with low thixotropy (easily spreadable) is applied to the area surrounded by the resin 5 with high thixotropy (FIG. 1(b)).
【0012】硬化炉に入れ、樹脂4,樹脂5を同時に硬
化する(図1(c))。[0012] The resin 4 and the resin 5 are placed in a curing furnace and cured at the same time (FIG. 1(c)).
【0013】樹脂のチキソトロピー性は、樹脂(例えば
、エポキシ樹脂)の充填剤(例えば、シリカ)の粒度分
布をわずかに変化させる事によって、硬化後の特性には
何ら影響を与えずに変えることが可能である。The thixotropic properties of a resin can be changed by slightly changing the particle size distribution of the filler (eg, silica) in the resin (eg, epoxy resin) without affecting the properties after curing. It is possible.
【0014】上記実施例は、ポッティング装置で行った
が、チキソトロピー性の低い樹脂の塗布は印刷装置によ
ってもよい。Although the above embodiments were carried out using a potting device, the coating of the resin with low thixotropy may also be performed using a printing device.
【0015】また、本発明はCOBに於いても同様に実
施可能である。Furthermore, the present invention can be implemented in a COB as well.
【0016】[0016]
【発明の効果】本発明によれば、樹脂ダムを作製するこ
となく、封止領域、封止厚の制御を容易に行うことがで
きる封止方法を提供することができるものであり、・
樹脂領域の制御の精度を向上させることができる。[Effects of the Invention] According to the present invention, it is possible to provide a sealing method in which the sealing area and sealing thickness can be easily controlled without creating a resin dam.
The accuracy of control of the resin region can be improved.
【0017】・ 硬化後は同一特性となるので、樹脂
ダムを用いた場合に比べ信頼性が向上する。- Since the properties are the same after curing, reliability is improved compared to when a resin dam is used.
【0018】・ 従来の封止装置の前にもう一台ポッ
ティング装置を併設することで、容易に製造工程を作製
でき、樹脂ダムを作成する工程を削除することができる
。[0018] By installing another potting device in front of the conventional sealing device, the manufacturing process can be easily created and the step of creating a resin dam can be omitted.
【図1】本発明による封止工程の断面図である。FIG. 1 is a cross-sectional view of the sealing process according to the invention.
【図2】図1(a)の平面図である。FIG. 2 is a plan view of FIG. 1(a).
【図3】従来技術(チキソトロピー性の低い樹脂を用い
た場合)の断面図である。FIG. 3 is a cross-sectional view of a conventional technique (when a resin with low thixotropy is used).
【図4】従来技術(チキソトロピー性の高い樹脂を用い
た場合)の断面図である。FIG. 4 is a cross-sectional view of a conventional technique (when a highly thixotropic resin is used).
【図5】従来技術(樹脂ダムを用いた場合)の断面図で
ある。FIG. 5 is a cross-sectional view of a conventional technique (when using a resin dam).
1 半導体素子
2 インナーリード
3 ポッティング装置
4 樹脂(チキソトロピー性の低い樹脂)5 樹脂
(チキソトロピー性の高い樹脂)6 樹脂ダム1 Semiconductor element 2 Inner lead 3 Potting device 4 Resin (low thixotropic resin) 5 Resin (high thixotropic resin) 6 Resin dam
Claims (1)
る2種類の樹脂を用いて、半導体素子を封止することを
特徴とする、半導体装置の製造方法。1. A method for manufacturing a semiconductor device, comprising sealing a semiconductor element using two types of resins having the same cured product properties but different liquid properties.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14573691A JPH04369231A (en) | 1991-06-18 | 1991-06-18 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14573691A JPH04369231A (en) | 1991-06-18 | 1991-06-18 | Fabrication of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04369231A true JPH04369231A (en) | 1992-12-22 |
Family
ID=15391957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14573691A Pending JPH04369231A (en) | 1991-06-18 | 1991-06-18 | Fabrication of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04369231A (en) |
-
1991
- 1991-06-18 JP JP14573691A patent/JPH04369231A/en active Pending
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