JPH04366814A - Liquid crystal display element substrate and liquid crystal display element formed by using this substrate. - Google Patents
Liquid crystal display element substrate and liquid crystal display element formed by using this substrate.Info
- Publication number
- JPH04366814A JPH04366814A JP16737891A JP16737891A JPH04366814A JP H04366814 A JPH04366814 A JP H04366814A JP 16737891 A JP16737891 A JP 16737891A JP 16737891 A JP16737891 A JP 16737891A JP H04366814 A JPH04366814 A JP H04366814A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- display element
- substrate
- electrode patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000007772 electrode material Substances 0.000 claims description 4
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、液晶表示素子基板なら
びにそれを用いた液晶表示素子に関するものである。本
発明は、液晶表示素子のうち強誘電液晶素子について特
に有効な技術である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display element substrate and a liquid crystal display element using the same. The present invention is a particularly effective technique for ferroelectric liquid crystal elements among liquid crystal display elements.
【0002】0002
【従来の技術】液晶表示素子は、図5または図6に示す
ように、2枚の液晶表示素子基板11,12間にスペー
サ19を介して貼り合わせた後、荷重をかけて均一なセ
ルギャップを形成し、このギャップに液晶を注入して構
成される。液晶表示素子基板11,12は一般にフォト
リソグラフィを用いて透明電極パターン15,16や金
属補助電極パターン21,22を形成するため、これら
の電極パターン15,16,21,22が凸部を形成し
ている。2. Description of the Related Art As shown in FIG. 5 or 6, a liquid crystal display element is manufactured by bonding two liquid crystal display element substrates 11 and 12 with a spacer 19 interposed therebetween, and then applying a load to achieve a uniform cell gap. It is constructed by forming a gap and injecting liquid crystal into this gap. Since the liquid crystal display element substrates 11, 12 generally have transparent electrode patterns 15, 16 and metal auxiliary electrode patterns 21, 22 formed using photolithography, these electrode patterns 15, 16, 21, 22 form convex portions. ing.
【0003】ところで、2枚の基板を貼合わせて荷重を
かける場合、従来は、図5または図6に示すように、電
極パターン15,16,21,22に荷重が集中し、電
極パターン15,16,21,22の一部を破損し、こ
の破片51または61が上下基板電極ショートの大きな
原因となって、歩留りを著しく低下させるという問題が
あった。図中、51はITO透明電極(ITO)15の
破片、61は金属(モリブデン)補助電極21の破片で
ある。By the way, when applying a load by bonding two substrates together, conventionally, as shown in FIG. 5 or 6, the load is concentrated on the electrode patterns 15, 16, 21, and 22, and 16, 21, and 22, and this fragment 51 or 61 becomes a major cause of short circuit between the upper and lower substrate electrodes, resulting in a significant decrease in yield. In the figure, 51 is a fragment of the ITO transparent electrode (ITO) 15, and 61 is a fragment of the metal (molybdenum) auxiliary electrode 21.
【0004】0004
【発明が解決しようとする課題】本発明は、上述した従
来例における問題点に鑑みてなされたもので、上下基板
の電極ショートによる液晶表示素子の不良を低減し、液
晶表示素子の歩留りの向上を図ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in the conventional example, and reduces defects in liquid crystal display elements due to electrode shorts between upper and lower substrates, and improves the yield of liquid crystal display elements. The purpose is to achieve this goal.
【0005】[0005]
【課題を解決するための手段】上記の目的を達成するた
め、本発明では、基板上の電極パターン間に電極パター
ンより高い絶縁性部材を設けることを特徴としている。[Means for Solving the Problems] In order to achieve the above object, the present invention is characterized in that an insulating member having higher insulating properties than the electrode patterns is provided between the electrode patterns on the substrate.
【0006】[0006]
【作用】本発明によれば、基板上の電極パターン間に電
極パターンより高い絶縁性部材を設けたため、2枚の基
板を貼合わせて荷重をかけた場合、その荷重はより高い
凸部を構成する絶縁性部材で支えられるので、電極パタ
ーンの破損を防止することができる。また、凸部が荷重
で破損した場合も絶縁性部材製であるため、基板間ショ
ートの原因とはならない。したがって、このように電極
パターン間に電極パターンより高い絶縁性部材を設ける
ことにより上下基板電極ショートによる液晶表示素子の
不良を著しく低減することが可能となる。[Function] According to the present invention, since an insulating member having higher insulating properties than the electrode patterns is provided between the electrode patterns on the substrate, when two substrates are pasted together and a load is applied, the load forms a higher convex portion. Since the electrode pattern is supported by an insulating member, damage to the electrode pattern can be prevented. Furthermore, even if the convex part is damaged by a load, it will not cause a short circuit between the boards because it is made of an insulating material. Therefore, by providing an insulating member having higher insulating properties than the electrode patterns between the electrode patterns in this way, it is possible to significantly reduce defects in the liquid crystal display element due to short-circuits between the upper and lower substrate electrodes.
【0007】[0007]
実施例1
図1は本発明の第1の実施例に係る液晶表示素子の断面
を示す。同図の液晶表示素子は、ガラス基板13,14
上にストライプ状のITO電極(透明電極)パターン1
5,16とそれぞれのITO電極15,16間にITO
膜厚より厚いSiO2 からなる絶縁性部材17,18
を形成してなる液晶表示素子基板11,12を所定の径
、例えば1.5μmφのスペーサ19を介して、かつI
TO電極パターン15と16の向きが直交するように、
貼り合わせたものである。この場合、荷重は凸部である
SiO2 17,18にかかるのでITO膜15,16
の破損が生じることはない。またSiO2 17,18
が荷重で破損した場合も絶縁物であるために上下基板電
極ショートの原因とはならない。Example 1 FIG. 1 shows a cross section of a liquid crystal display element according to a first example of the present invention. The liquid crystal display element in the figure has glass substrates 13 and 14.
Striped ITO electrode (transparent electrode) pattern 1 on top
5, 16 and the ITO electrodes 15, 16 respectively.
Insulating members 17 and 18 made of SiO2 which is thicker than the film thickness
The liquid crystal display element substrates 11 and 12 formed with
The directions of the TO electrode patterns 15 and 16 are perpendicular to each other.
It is pasted together. In this case, since the load is applied to the convex portions of SiO2 17 and 18, the ITO films 15 and 16
No damage will occur. Also SiO2 17,18
Even if it breaks under load, it will not cause a short circuit between the upper and lower substrate electrodes because it is an insulator.
【0008】以下、図1における液晶表示素子基板11
,12の製造プロセスを基板11を例に図3(a)〜(
d)を参照しながら説明する。まず、ガラス基板13上
に透明電極材料であるITOの層31を1500Åスパ
ッタリングにて形成しフォトレジスト(HPR−118
2、[フジハントエレクトロニクステクノロジー(株)
])でストライプ状のパターン32を形成し(図3(a
))、塩酸:塩化第2鉄の1:1溶液にてITOをエッ
チングしてITO透明電極15を形成する(図3(b)
)。次に、基板温度を100℃以下に保ちながらスパッ
タリングにて絶縁性材料であるSiO2 を2000Å
成膜し(図3(c))、33および17の部分を形成す
る。最後にSiO2 膜のうち33部分をフォトレジス
トとともに剥離して図3(d)に示すようなSiO2
17がITOパターン15より高い凸部となる構成の液
晶表示素子基板11を完成する。基板12も全く同様に
して作製する。Below, the liquid crystal display element substrate 11 in FIG.
, 12 using the substrate 11 as an example, FIGS.
This will be explained with reference to d). First, a layer 31 of ITO, which is a transparent electrode material, is formed on a glass substrate 13 by sputtering to a thickness of 1500 Å, and a photoresist (HPR-118
2. [Fuji Hunt Electronics Technology Co., Ltd.]
]) to form a striped pattern 32 (see FIG. 3(a)
)), ITO is etched with a 1:1 solution of hydrochloric acid and ferric chloride to form an ITO transparent electrode 15 (FIG. 3(b)).
). Next, while keeping the substrate temperature below 100°C, insulating material SiO2 was deposited to a thickness of 2000 Å by sputtering.
A film is formed (FIG. 3(c)) to form portions 33 and 17. Finally, 33 parts of the SiO2 film were peeled off along with the photoresist to form the SiO2 film as shown in Figure 3(d).
A liquid crystal display element substrate 11 having a structure in which 17 is a convex portion higher than the ITO pattern 15 is completed. The substrate 12 is also produced in exactly the same manner.
【0009】本実施例によれば、図5の従来例と比較し
てより均一なセルギャップを得ることができ、上下基板
電極ショート率を非常に小さく押えることが可能となっ
た。表1は本実施例(図1)と従来例(図5)の上下基
板電極ショート率をスペーサ径を変えて比較したもので
ある。なお、表1において上下電極基板ショートによる
不良率は、300mm×300mmガラス基板に100
0本のストライプ電極を形成した液晶表示基板を使用し
て測定した。According to this embodiment, a more uniform cell gap can be obtained compared to the conventional example shown in FIG. 5, and the short-circuit rate of the upper and lower substrate electrodes can be kept very small. Table 1 compares the short-circuit ratio of the upper and lower substrate electrodes of this embodiment (FIG. 1) and the conventional example (FIG. 5) by changing the spacer diameter. In addition, in Table 1, the failure rate due to short circuit between the upper and lower electrode substrates is as follows:
The measurement was performed using a liquid crystal display substrate on which zero stripe electrodes were formed.
【0010】0010
【表1】[Table 1]
【0011】強誘電液晶表示素子は数μm以下の小さな
セルギャップを必要とするが、本実施例は、表1に示す
とおり、この強誘電液晶表示素子のように小さなセルギ
ャップを必要とする場合特に効果がある。[0011] Ferroelectric liquid crystal display elements require a small cell gap of several micrometers or less, but this example is suitable for cases where a small cell gap is required like this ferroelectric liquid crystal display element, as shown in Table 1. Particularly effective.
【0012】実施例2
図2は本発明の第2の実施例に係る液晶表示素子の断面
を示す。同図の液晶表示素子は、ガラス基板13,14
上にストライプ状の透明電極パターン15,16と金属
補助電極パターン21,22を有し、高さが金属補助電
極よりも高いTa2O5からなる絶縁性部材17,18
を形成した液晶表示素子基板11,12を1.5μmφ
のスペーサ19を介して、かつITO電極パターン15
と16の向きが直交するように、貼り合わせることによ
って構成したものである。Embodiment 2 FIG. 2 shows a cross section of a liquid crystal display element according to a second embodiment of the present invention. The liquid crystal display element in the figure has glass substrates 13 and 14.
Insulating members 17, 18 made of Ta2O5, which have striped transparent electrode patterns 15, 16 and metal auxiliary electrode patterns 21, 22 on top, and are higher in height than the metal auxiliary electrodes.
The liquid crystal display element substrates 11 and 12 formed with
via the spacer 19 and the ITO electrode pattern 15
and 16 are pasted together so that their directions are perpendicular to each other.
【0013】以下、図2における液晶表示素子基板11
,12の製造プロセスを基板11を例に図4(a)〜(
e)を参照しながら説明する。まず、ガラス基板13上
に透明電極材料であるITOの層31を1500Å、金
属補助電極の材料であるMoの層41を1500Å連続
してスパッタリングで形成し、フォトレジスト(HPR
−1182、[フジハントエレクトロニクステクノロジ
ー(株)])で、ストライプ状パターン32を形成する
(図4(a))。次にH3PO4、HNO3およびCH
3COOHの混合溶液にてMoをエッチングし、続いて
、HI水溶液を用いてITOをエッチングする(図4(
b))。さらに基板温度を100℃以下に保ちながら、
スパッタリングにて絶縁性材料であるTa2O5を35
00Å成膜して33および17に相当する部分を形成し
(図4(c))、フォトレジストを剥離する(図4(d
))。最後に電極補助線としてMoパターン21を形成
して図4(e)に示すような絶縁性部材(Ta2O5)
17が金属補助電極21よりも突出した構成の液晶表示
素子基板11を完成する。基板12も全く同様にして作
製する。Below, the liquid crystal display element substrate 11 in FIG.
, 12 using the substrate 11 as an example, FIGS.
This will be explained with reference to e). First, on the glass substrate 13, a layer 31 of ITO, which is a transparent electrode material, is continuously formed with a thickness of 1500 Å, and a layer 41 of Mo, which is a material of a metal auxiliary electrode, is continuously formed with a thickness of 1500 Å.
-1182, [Fuji Hunt Electronics Technology Co., Ltd.]) to form a striped pattern 32 (FIG. 4(a)). Then H3PO4, HNO3 and CH
Mo is etched using a mixed solution of 3COOH, and then ITO is etched using an HI aqueous solution (see Figure 4).
b)). Furthermore, while keeping the substrate temperature below 100℃,
35% of Ta2O5, an insulating material, is sputtered.
00 Å film was formed to form parts corresponding to 33 and 17 (Fig. 4(c)), and the photoresist was peeled off (Fig. 4(d)
)). Finally, a Mo pattern 21 is formed as an electrode auxiliary line to form an insulating member (Ta2O5) as shown in FIG. 4(e).
A liquid crystal display element substrate 11 having a structure in which the portions 17 protrude beyond the metal auxiliary electrodes 21 is completed. The substrate 12 is also produced in exactly the same manner.
【0014】本実施例を用いることにより、従来例(図
6)と比較して非常に均一なセルギャップを得ることが
できた。これは比較的軟い金属であるMoでセルギャッ
プを保持するよりも、硬い材料であるTa2O5部分で
ギャップを保持する方が有利であることに起因する。本
実施例によれば、さらに実施例1と同様に上下基板電極
ショート率の減少に対しても十分な効果があった。By using this example, a very uniform cell gap could be obtained compared to the conventional example (FIG. 6). This is because it is more advantageous to maintain the cell gap with the Ta2O5 portion, which is a hard material, than with Mo, which is a relatively soft metal. According to this example, as in Example 1, there was also a sufficient effect on reducing the short-circuit rate of the upper and lower substrate electrodes.
【0015】[0015]
【発明の効果】以上説明したように、本発明によれば、
絶縁性部材で電極パターンよりも高い凸部を形成するこ
とにより、均一なセルギャップを得ることができ、さら
に上下基板電極ショートによる不良を低減し、製造歩留
りが向上する効果がある。[Effects of the Invention] As explained above, according to the present invention,
By forming a convex portion higher than the electrode pattern using an insulating member, a uniform cell gap can be obtained, and furthermore, defects due to short circuit between the upper and lower substrate electrodes can be reduced, and the manufacturing yield can be improved.
【図1】 本発明の一実施例に係る液晶表示素子の構
成を示す断面図である。FIG. 1 is a sectional view showing the structure of a liquid crystal display element according to an embodiment of the present invention.
【図2】 本発明の他の実施例に係る液晶表示素子の
構成を示す断面図である。FIG. 2 is a cross-sectional view showing the structure of a liquid crystal display element according to another embodiment of the present invention.
【図3】 図1における液晶表示素子基板の製造プロ
セスの説明図である。3 is an explanatory diagram of the manufacturing process of the liquid crystal display element substrate in FIG. 1. FIG.
【図4】 図2における液晶表示素子基板の製造プロ
セスの説明図である。4 is an explanatory diagram of the manufacturing process of the liquid crystal display element substrate in FIG. 2. FIG.
【図5】 従来の液晶表示素子の構成を示す断面図で
ある。FIG. 5 is a cross-sectional view showing the configuration of a conventional liquid crystal display element.
【図6】 従来の他の液晶表示素子の構成を示す断面
図である。FIG. 6 is a cross-sectional view showing the configuration of another conventional liquid crystal display element.
11,12:液晶表示素子基板、13,14:ガラス基
板、15,16:透明電極(ITO)パターン、17,
18:絶縁性部材(SiO2 またはTa2O5)、1
9:スペーサ、21,22:金属(Mo)補助電極。11, 12: Liquid crystal display element substrate, 13, 14: Glass substrate, 15, 16: Transparent electrode (ITO) pattern, 17,
18: Insulating member (SiO2 or Ta2O5), 1
9: Spacer, 21, 22: Metal (Mo) auxiliary electrode.
Claims (8)
る液晶表示基板において、上記透明電極パターン間に絶
縁性部材を有し、この絶縁性部材の高さが透明電極パタ
ーンより高いことを特徴とする液晶表示素子基板。1. A liquid crystal display substrate having a transparent electrode pattern on a transparent substrate, characterized in that an insulating member is provided between the transparent electrode patterns, and the height of the insulating member is higher than the transparent electrode pattern. Liquid crystal display element substrate.
より200Å〜3000Å高いことを特徴とする請求項
1記載の液晶表示素子基板。2. The liquid crystal display element substrate according to claim 1, wherein the height of the insulating member is 200 Å to 3000 Å higher than the transparent electrode pattern.
料であることを特徴とする請求項1または2に記載の液
晶表示素子基板。3. The liquid crystal display element substrate according to claim 1, wherein the insulating member is made of a harder material than the transparent electrode material.
補助電極パターンを有する液晶表示素子基板において、
これらの電極パターン間に絶縁性部材を有し、この絶縁
性部材の高さが透明電極パターンまたは金属補助電極パ
ターンのいずれよりも高いことを特徴とする液晶表示素
子基板。4. A liquid crystal display element substrate having a transparent electrode pattern and a metal auxiliary electrode pattern on a transparent substrate,
A liquid crystal display element substrate characterized in that an insulating member is provided between these electrode patterns, and the height of this insulating member is higher than either the transparent electrode pattern or the metal auxiliary electrode pattern.
または金属補助電極パターンよりも200Å〜3000
Å高いことを特徴とする請求項4記載の液晶表示素子基
板。5. The height of the insulating member is 200 Å to 3000 Å higher than that of the transparent electrode pattern or the metal auxiliary electrode pattern.
5. The liquid crystal display element substrate according to claim 4, wherein the liquid crystal display element substrate has a high Å.
い材料であることを特徴とする請求項4または5記載の
液晶表示素子基板。6. The liquid crystal display element substrate according to claim 4, wherein the insulating member is made of a harder material than the metal auxiliary electrode material.
表示素子基板を用いたことを特徴とする液晶表示素子。7. A liquid crystal display element comprising the liquid crystal display element substrate according to claim 1.
晶表示素子基板を用いたことを特徴とする強誘電液晶表
示素子。8. A ferroelectric liquid crystal display device characterized by using the liquid crystal display device substrate according to any one of claims 1 to 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16737891A JPH04366814A (en) | 1991-06-13 | 1991-06-13 | Liquid crystal display element substrate and liquid crystal display element formed by using this substrate. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16737891A JPH04366814A (en) | 1991-06-13 | 1991-06-13 | Liquid crystal display element substrate and liquid crystal display element formed by using this substrate. |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04366814A true JPH04366814A (en) | 1992-12-18 |
Family
ID=15848608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16737891A Pending JPH04366814A (en) | 1991-06-13 | 1991-06-13 | Liquid crystal display element substrate and liquid crystal display element formed by using this substrate. |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04366814A (en) |
-
1991
- 1991-06-13 JP JP16737891A patent/JPH04366814A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6349914B2 (en) | ||
JPH04366814A (en) | Liquid crystal display element substrate and liquid crystal display element formed by using this substrate. | |
JPS62247330A (en) | Liquid crystal display device | |
JPH02281237A (en) | Electrode structure of display device | |
JP2778746B2 (en) | Liquid crystal display device and method of manufacturing electrode substrate | |
JPH05224220A (en) | Formation of pattern of substrate for liquid crystal display element | |
JP2769617B2 (en) | Manufacturing method of liquid crystal display device | |
JP2989286B2 (en) | Electrode forming method and electrode structure in liquid crystal display device | |
JPH05127185A (en) | Production of liquid crystal display element | |
JPH06308539A (en) | Production of matrix array substrate | |
JPH0342631A (en) | Production of mim type nonlinear switching element | |
JP2600731B2 (en) | Liquid crystal device | |
JPH0466919A (en) | Production of liquid crystal display device | |
JPH02100022A (en) | Liquid crystal display device | |
JPS59222816A (en) | Production of base plate for liquid crystal display device | |
JPH0352277A (en) | Manufacture of nonlinear element | |
JPH0281031A (en) | Nonlinear element | |
JPH0720499A (en) | Nonlinear element and its production and element substrate for electro-optical device having the nonlinear element as well as electro-optical device | |
JPH0345933A (en) | Production of mim type nonlinear switching element | |
JPH03154030A (en) | Ferroelectric liquid crystal element | |
JPS63296020A (en) | Liquid crystal display element | |
JPS6315282A (en) | Active matrix substrate | |
JPS62109025A (en) | Liquid crystal display element | |
JPH01114826A (en) | Liquid crystal display element | |
JPS61121079A (en) | Mim diode substrate |