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JPH04103768A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPH04103768A
JPH04103768A JP22130390A JP22130390A JPH04103768A JP H04103768 A JPH04103768 A JP H04103768A JP 22130390 A JP22130390 A JP 22130390A JP 22130390 A JP22130390 A JP 22130390A JP H04103768 A JPH04103768 A JP H04103768A
Authority
JP
Japan
Prior art keywords
susceptor
substrate
cover
contact
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22130390A
Other languages
Japanese (ja)
Inventor
Masayasu Suzuki
正恭 鈴樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22130390A priority Critical patent/JPH04103768A/en
Publication of JPH04103768A publication Critical patent/JPH04103768A/en
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase yield without damaging a material to be treated by using an elastic material excellent in heat resistance at the contact part between a film formation preventive cover and the material and susceptor in a reaction vessel. CONSTITUTION:A susceptor 2 for carrying a material to be treated and a mechanism 3 for heating the material to a specified temp. are provided in a film forming chamber 1 (reaction vessel) of the CVD device, and a substrate 4 (material to be treate) to be coated with a film is freely detachably placed on the principal plane of the susceptor 2. The periphery of the substrate 4 is held by a cover 7 of quartz, etc., to prevent the infiltration of a gaseous reactant 5 into the periphery and rear of the substrate 4. The contact part 7a between the substrate 4 at the cover 7 and susceptor 2 is formed with an elastic material excellent in heat resistance, e.g. an org. polymeric material such as polyimide resin. Cooling water is circulated through a passage 2a in the susceptor 2 to cool the susceptor, and the deformation and deterioration of the contact part 7a due to the temp. rise are prevented. Consequently, the generation of dust and damage due to contact of the cover 7 with the substrate 4 and susceptor 2 are obviated.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体集積回路装置の製造装置に関し、特に
CVD装置の選択CVD装置に適用して有効な技術に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for manufacturing a semiconductor integrated circuit device, and particularly to a technique that is effective when applied to a selective CVD apparatus of a CVD apparatus.

[従来の技術] 半導体集積回路装置の高集積化に伴い、多層配線技術の
重要性がますます高まってきている。特に、配線層間の
接続孔に導電性物質を選択的に埋め込む技術は非常に注
目を集めている。その中で、特に優れた方法として選択
CVD法、たとえば選択W(タングステン)−CVD法
が知られている。
[Prior Art] As semiconductor integrated circuit devices become more highly integrated, multilayer wiring technology is becoming increasingly important. In particular, a technique for selectively embedding a conductive material into connection holes between wiring layers is attracting a great deal of attention. Among these methods, a selective CVD method, such as a selective W (tungsten)-CVD method, is known as a particularly excellent method.

この方法は、たとえば社団法人電子通信学会、昭和59
年11月30日発行、rLsIノ1ンドブツク、P30
7〜P318などの文献に記載されるように、二酸化シ
リコンなどの絶縁性物質面を除く、ポリS1またはアル
ミニウム合金などの導電性物質面上にのみタングステン
を堆積させることができる方法である。
This method is used, for example, by the Institute of Electronics and Communication Engineers, 1982.
Published on November 30th, rLsI No. 1 Book, P30
7-P318, it is a method that allows tungsten to be deposited only on conductive material surfaces such as poly S1 or aluminum alloys, excluding insulating material surfaces such as silicon dioxide.

ところが、一般の半導体集積回路装置の製造プロセスで
は、ポリSiまたはアルミニウム合金などの導電膜と二
酸化シリコンなどの絶縁膜とを交互に堆積させ、ホトリ
ソグラフ技術によりレジストにパターンを転写後、エツ
チング技術によって加工を行っている。その際、搬送異
物を低減して歩留りを向上させるために、基板周辺部の
レジストが除去される。従って、一般の半導体集積回路
装置の製造プロセスにおいては、基板の裏面のみならず
、基板周辺部もSiなどの導電性物質が露出された状態
となる。
However, in the manufacturing process of general semiconductor integrated circuit devices, conductive films such as poly-Si or aluminum alloy and insulating films such as silicon dioxide are deposited alternately, and after the pattern is transferred to the resist using photolithography technology, the pattern is transferred using etching technology. Processing is in progress. At this time, the resist around the substrate is removed in order to reduce the amount of foreign particles being transported and improve yield. Therefore, in the manufacturing process of a general semiconductor integrated circuit device, a conductive material such as Si is exposed not only on the back surface of the substrate but also on the periphery of the substrate.

このような基板に選択W−CVDを行う場合には、基板
周辺部および裏面にタングステンが堆積し、大面積の膜
形成を行うことによって選択性が低下する。従って、タ
ングステンの選択性が基板周辺部および裏面への堆積に
大きく影響され、選択性の低下によって半導体集積回路
装置の歩留りが低下するという問題がある。このような
問題を解決するために、基板周辺部に反応ガスの回り込
み防止用の石英カバーを取り付ける方法が採用されてい
る。
When selective W-CVD is performed on such a substrate, tungsten is deposited on the periphery and back surface of the substrate, and the selectivity is reduced by forming a film over a large area. Therefore, there is a problem in that the selectivity of tungsten is greatly affected by the deposition on the periphery and back surface of the substrate, and the yield of semiconductor integrated circuit devices decreases due to the decrease in selectivity. In order to solve this problem, a method has been adopted in which a quartz cover is attached to the periphery of the substrate to prevent reaction gas from flowing around.

なお、この種の方法を用いた装置としては、たとえば日
本真空社製ERA−1000型金属CvD装置、米国G
ENUS社製8720型金属CVD装置などが知られて
いる。
Examples of devices using this type of method include the ERA-1000 metal CvD device manufactured by Nippon Shinku Co., Ltd., and the
The 8720 type metal CVD apparatus manufactured by ENUS is known.

[発明が解決しようとする課題] ところが、前記のような従来技術においては、基板周辺
部のカバーに石英などの無機絶縁物が用いられるために
、基板のカバーとの接触部分に傷がつき、それにより発
生する異物によって半導体集積回路装置の歩留りが低下
するという問題がある。
[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, since an inorganic insulating material such as quartz is used for the cover around the substrate, the contact portion of the substrate with the cover may be damaged. There is a problem in that the yield of semiconductor integrated circuit devices decreases due to foreign matter generated thereby.

そこで、本発明の目的は、処理物に傷をつけることなく
、半導体集積回路装置の歩留りの向上が可能とされ、金
属の選択性の良好な膜形成防止用カバーを備えたCVD
装置を提供することにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the yield of semiconductor integrated circuit devices without damaging the processed material, and to provide a CVD device equipped with a cover for preventing film formation with good metal selectivity.
The goal is to provide equipment.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[課題を解決するための手段] 本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおりである。
[Means for Solving the Problems] Among the inventions disclosed in this application, a brief overview of typical inventions is as follows.

すなわち、本発明のCVD装蓋は、反応容器内に、少な
くとも加熱機構およびサセプタが収納され、このサセプ
タ上に処理物が載置され、さらにこの処理物周辺部への
処理が防止される膜形成防止用カバーを備えたCVD装
置であって、膜形成防止用カバーの処理物およびサセプ
タとの接触部分に耐熱性に優れた弾性材料が用いられる
ものである。
That is, in the CVD equipment lid of the present invention, at least a heating mechanism and a susceptor are housed in a reaction container, a processing object is placed on the susceptor, and a film is formed to prevent processing around the processing object. The CVD apparatus is equipped with a cover for preventing film formation, and an elastic material with excellent heat resistance is used for the part of the cover for preventing film formation that comes into contact with the processed material and the susceptor.

[作用] 前記したCVD装置によれば、処理物周辺部への処理が
防止される膜形成防止用カバーの、処理物およびサセプ
タとの接触部分に耐熱性に優れた弾性材料が用いられる
ことにより、カバーが処理物およびサセプタに接触した
場合においても、処理物に傷をつけることがない。これ
により、カバーの処理物およびサセプタとの接触時にお
ける発塵が防止できる。
[Function] According to the above-mentioned CVD apparatus, an elastic material with excellent heat resistance is used in the contact portion of the film formation prevention cover that prevents the processing around the processing object with the processing object and the susceptor. Even if the cover comes into contact with the workpiece and the susceptor, the workpiece will not be damaged. This can prevent dust generation when the cover comes into contact with the processed material and the susceptor.

[実施例] 第1図は本発明の一実施例であるCVD装置の要部を示
す断面図、M2図は本実施例のCVD装置に用いられる
処理物の要部を示す断面図、第3図は本実施例のCVD
装置の変形例を示す要部断面図である。
[Example] Fig. 1 is a sectional view showing the main part of a CVD apparatus according to an embodiment of the present invention, M2 is a sectional view showing the main part of the processed material used in the CVD apparatus of this embodiment, and Fig. 3 The figure shows the CVD of this example.
FIG. 7 is a sectional view of main parts showing a modification of the device.

まず、第1図により本実施例のCVD装置の構成を説明
する。
First, the configuration of the CVD apparatus of this embodiment will be explained with reference to FIG.

本実施例のCVD装置は、たとえば選択W−CVD装置
とされ、膜形成処理が行われるチャンバ(反応容器)1
の内部に、処理物を載置するサセプタ、および処理物を
所定の温度に加熱する加熱機構3を備え、サセプタ2の
主面上に膜形成処理が行われる基板(処理物)4が着脱
自在に載置されている。
The CVD apparatus of this embodiment is, for example, a selective W-CVD apparatus, and has a chamber (reaction vessel) 1 in which a film forming process is performed.
A susceptor on which a processing object is placed and a heating mechanism 3 that heats the processing object to a predetermined temperature are provided inside the susceptor 2, and a substrate (processing object) 4 on which a film formation process is performed on the main surface of the susceptor 2 is detachably attached. It is placed on.

チャンバlは、たとえばアルミニウム合金などの金属材
料によって形成され、その内部に外部から所定の組成、
圧力右よび流量の反応ガス5が供給される構造となって
いる。たとえば、この反応ガス5は、WF6 (六弗化
タングステン)−3iH4(シラン)−A丁 (アルゴ
ン)系とされ、06〜2To r rの条件下において
選択的な膜形成が行われる。
The chamber l is formed of a metal material such as an aluminum alloy, and a predetermined composition,
The structure is such that the reaction gas 5 is supplied at the right pressure and flow rate. For example, the reaction gas 5 is a WF6 (tungsten hexafluoride)-3iH4 (silane)-argon system, and selective film formation is performed under conditions of 06 to 2 Torr.

サセプタ2は、たとえば石英などによって形成され、内
部に冷却水の流通路2aが形成されている。そして、流
通路2aに冷却水を流すことによって、サセプタ2が所
定の温度に冷却される構造となっている。
The susceptor 2 is made of, for example, quartz, and has a cooling water flow path 2a formed therein. The structure is such that the susceptor 2 is cooled to a predetermined temperature by flowing cooling water through the flow path 2a.

加熱機構3は、たとえば赤外ランプなどの光源3aが用
いられ、サセプタ2に載置された基板4が300℃程度
に加熱される構造となっている。
The heating mechanism 3 uses a light source 3a such as an infrared lamp, and has a structure in which the substrate 4 placed on the susceptor 2 is heated to about 300°C.

基板4は、たとえば第2図に示すように、金属配線層4
aに5102 などの絶縁膜4bが堆積され、この絶縁
膜4bに金属配線層4aと、選択CVD以降に形成され
る半導体素子(図示せず)とを電気的に接続する接続孔
4Cが開口されている。
For example, as shown in FIG. 2, the substrate 4 has a metal wiring layer 4.
An insulating film 4b such as 5102 is deposited on a, and a connection hole 4C is opened in this insulating film 4b to electrically connect the metal wiring layer 4a and a semiconductor element (not shown) formed after selective CVD. ing.

そして、選択W−CV D法によって、接続孔4Cの内
部にのみタングステン(W)6が選択的に形成される構
造となっている。
The structure is such that tungsten (W) 6 is selectively formed only inside the connection hole 4C by the selective W-CVD method.

また、基板4の外周部は、石英などの無機絶縁物によっ
て形成されたカバー7により押さえられ、基板4の周辺
部および裏面に反応ガス5が回り込まないような構造と
なっている。しかも、カバー7の基板4およびサセプタ
2との接触部7aは、耐熱性に優れた弾性材料、たとえ
ばポリイミド樹脂などの有機高分子材料によって形成さ
れている。
Further, the outer circumferential portion of the substrate 4 is held down by a cover 7 formed of an inorganic insulator such as quartz, so that the structure is such that the reactive gas 5 does not enter the peripheral portion and back surface of the substrate 4. Moreover, the contact portion 7a of the cover 7 with the substrate 4 and the susceptor 2 is formed of an elastic material with excellent heat resistance, for example, an organic polymer material such as polyimide resin.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

以上のように構成される本実施例のCVD装置において
は、基板4の外周部がカバー7によって押圧され、チャ
ンバ1の内部に供給された反応ガス5が基板40周辺部
および裏面に回り込むことがない。
In the CVD apparatus of this embodiment configured as described above, the outer periphery of the substrate 4 is pressed by the cover 7, and the reaction gas 5 supplied into the chamber 1 is prevented from flowing around the periphery and back surface of the substrate 40. do not have.

また、カバー7の基板4との接触部7aが弾性材料によ
って形成され、カバー7と基板4との接触による異物の
発生がない。
Further, the contact portion 7a of the cover 7 with the substrate 4 is formed of an elastic material, so that no foreign matter is generated due to the contact between the cover 7 and the substrate 4.

さらに、カバー7が設定温度以上に上昇した場合には、
サセプタ2の流通路2aに冷却水を流通することによっ
て冷却が可能とされ、温度上昇によるポリイミド樹脂で
形成された接触部7aの変形および変質などを発生する
ことがない。
Furthermore, if the temperature of the cover 7 rises above the set temperature,
Cooling is possible by circulating cooling water through the flow path 2a of the susceptor 2, and the contact portion 7a formed of polyimide resin is not deformed or deteriorated due to temperature rise.

従って、本実施例のCVD装置によれば、膜形成防止用
のカバー7の、処理物である基板4との接触部7aに耐
熱性に優れた弾性材料を用いることにより、カバー7の
接触i7aの変形を生じることなく、タングステン6を
選択性良く接続孔4Cの内部にのみ形成でき、かつ基板
4およびサセプタ2との接触による発塵を防止すること
ができる。これにより、半導体集積回路装置の歩留りの
向上が可能となる。
Therefore, according to the CVD apparatus of this embodiment, by using an elastic material with excellent heat resistance for the contact portion 7a of the cover 7 for preventing film formation with the substrate 4, which is the object to be processed, the contact i7a of the cover 7 is The tungsten 6 can be selectively formed only inside the connection hole 4C without causing any deformation, and dust generation due to contact with the substrate 4 and the susceptor 2 can be prevented. This makes it possible to improve the yield of semiconductor integrated circuit devices.

以上、本発明者によってなされた発明を実施例に基づき
具体的に説明したが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。
As above, the invention made by the present inventor has been specifically explained based on Examples, but it should be noted that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Not even.

たとえば、本実施例のCVD装置については、カバー7
の基板4およびサセプタ2との接触部7aが、第1図に
示すように面接触である場合について説明したが、本発
明は前記実施例に限定されるものではなく、たとえば第
3図のようにカバー7の接触部7aがナイフ状に形成さ
れ、基板4およびサセプタ2に線接触において接触され
る場合についても適用可能である。この場合に、カバー
7と基板4との接触面積が小さく、基板4からの放熱を
低減することができるので、基板4をより均一に加熱す
ることが可能となる。
For example, in the CVD apparatus of this embodiment, the cover 7
Although the case has been described in which the contact portion 7a between the substrate 4 and the susceptor 2 is surface contact as shown in FIG. 1, the present invention is not limited to the above embodiment. The present invention is also applicable to a case where the contact portion 7a of the cover 7 is formed into a knife shape and is brought into line contact with the substrate 4 and the susceptor 2. In this case, the contact area between the cover 7 and the substrate 4 is small, and heat radiation from the substrate 4 can be reduced, so that the substrate 4 can be heated more uniformly.

また、カバー7の接触部7aが、ポリイミド樹脂などの
有機高分子材料によって形成される場合について説明し
たが、たとえばシリコーン樹脂またはエポキシ樹脂など
についても適用可能とされ、特に金属が形成されにくい
耐熱性に優れた弾性材料であればよい。
In addition, although the case where the contact portion 7a of the cover 7 is formed of an organic polymer material such as polyimide resin has been described, it is also applicable to silicone resin or epoxy resin, especially since it is heat resistant and difficult to form metal. Any elastic material with excellent properties may be used.

さらに、本実施例のCVD装置においては、選択CVD
法によって堆積される金属がタングステン6である場合
について説明したが、たとえばモリブデン(M○)、銅
(Cu)、チタン(T1)、アルミニウム(AA)また
はこれらの金属の珪化物などが堆積される場合について
も適用可能である。
Furthermore, in the CVD apparatus of this embodiment, selective CVD
Although the case where the metal deposited by the method is tungsten 6 has been described, for example, molybdenum (M○), copper (Cu), titanium (T1), aluminum (AA), or silicides of these metals are deposited. It is also applicable to cases.

以上の説明では、主として本発明者によってなされた発
明をその利用分野であるCVD装置に用いられる選択C
VD装置に適用した場合について説明したが、これに限
定されるものではなく、特に発塵防止が必要とされる他
のCVD装置についても広く適用可能である。
In the above explanation, the invention made by the present inventor will mainly be described as a selection C used in a CVD apparatus, which is the field of application of the invention.
Although the case where the present invention is applied to a VD apparatus has been described, it is not limited thereto, and can be widely applied to other CVD apparatuses in which dust generation prevention is particularly required.

[発明の効果] 本願において開示される発明のうち、代表的なものによ
って得られる効果を簡単に説明すれば、下記のとおりで
ある。
[Effects of the Invention] Among the inventions disclosed in this application, the effects obtained by typical inventions are briefly described below.

すなわち、反応容器内に、少なくとも加熱機構およびサ
セプタが収納され、このサセプタ上に処理物が載置され
、さらにこの処理物周辺部への処理が防止される膜形成
防止用カバーを備えたCVD装蓋において、膜形成防止
用カバーの処理物およびサセプタとの接触部分に耐熱性
に優れた弾性材料が用いられることにより、カバーが処
理物およびサセプタに接触した場合においても処理物に
傷をつけることがないので、カバーの処理物およびサセ
プタとの接触時における発塵が防止できる。
That is, a CVD apparatus is provided in which at least a heating mechanism and a susceptor are housed in a reaction container, a processing object is placed on the susceptor, and a film formation prevention cover is further provided to prevent processing around the processing object. In the lid, an elastic material with excellent heat resistance is used in the contact area of the film formation prevention cover with the processed material and the susceptor, so even if the cover comes into contact with the processed material and the susceptor, the processed material will not be damaged. Since there is no dust, dust generation can be prevented when the cover comes into contact with the processed material and the susceptor.

また、特に有機高分子材料などの弾性材料がカバーの接
触部に用いられることにより、金属の膜形成を選択性良
く形成することができる。
In addition, by using an elastic material such as an organic polymer material for the contact portion of the cover, a metal film can be formed with good selectivity.

この結果、異物による影響が低減され、かつ金属の選択
性が良好となるので、半導体集積回路装置の歩留りの向
上が可能とされるCVD装置を得ることができる。
As a result, the influence of foreign matter is reduced and metal selectivity is improved, making it possible to obtain a CVD apparatus that can improve the yield of semiconductor integrated circuit devices.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例であるCVD装置の要部を示
す断面図、 第2図は本実施例のCVD装置に用いられる処理物の要
部を示す断面図、 第3図は本実施例のCVD装置の変形例を示す要部断面
図である。 1・・・チャンバ(反応容器)、2・・・サセプタ、2
a・・・流通路、3・・・加熱機構、3a・・・光源、
4・・・基板(処理物)、4a・・・金属配線層、4b
・・・絶縁膜、4C・・・接続孔、5・・・反応ガス、
6・・・タングステン、7・・・カバー 7a・・・接
触部。 7a=接触部
FIG. 1 is a cross-sectional view showing the main parts of a CVD apparatus that is an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the main parts of the processed material used in the CVD apparatus of this embodiment, and FIG. 7 is a sectional view of a main part showing a modification of the CVD apparatus of the embodiment. 1... Chamber (reaction container), 2... Susceptor, 2
a...Flow path, 3...Heating mechanism, 3a...Light source,
4... Substrate (processed object), 4a... Metal wiring layer, 4b
... Insulating film, 4C... Connection hole, 5... Reactive gas,
6...Tungsten, 7...Cover 7a...Contact part. 7a=contact part

Claims (1)

【特許請求の範囲】 1、反応容器内に、少なくとも加熱機構およびサセプタ
が収納され、該サセプタ上に処理物が載置され、さらに
該処理物周辺部への処理が防止される膜形成防止用カバ
ーを備えたCVD装置であって、前記膜形成防止用カバ
ーの前記処理物およびサセプタとの接触部分に耐熱性に
優れた弾性材料が用いられることを特徴とするCVD装
置。 2、前記弾性材料が、有機高分子材料であることを特徴
とする請求項1記載のCVD装置。
[Claims] 1. A method for preventing film formation in which at least a heating mechanism and a susceptor are housed in a reaction vessel, a processed material is placed on the susceptor, and further processing is prevented from being applied to the periphery of the processed material. 1. A CVD apparatus comprising a cover, wherein an elastic material with excellent heat resistance is used in a contact portion of the film formation prevention cover with the processed material and the susceptor. 2. The CVD apparatus according to claim 1, wherein the elastic material is an organic polymer material.
JP22130390A 1990-08-24 1990-08-24 Cvd device Pending JPH04103768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22130390A JPH04103768A (en) 1990-08-24 1990-08-24 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22130390A JPH04103768A (en) 1990-08-24 1990-08-24 Cvd device

Publications (1)

Publication Number Publication Date
JPH04103768A true JPH04103768A (en) 1992-04-06

Family

ID=16764682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22130390A Pending JPH04103768A (en) 1990-08-24 1990-08-24 Cvd device

Country Status (1)

Country Link
JP (1) JPH04103768A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208959A (en) * 1992-06-24 1994-07-26 Anelva Corp Cvd device, multi-chamber type cvd device and its substrate processing method
JP2003502501A (en) * 1999-06-19 2003-01-21 ゼニテックインコーポレイテッド Chemical vapor deposition reactor and thin film forming method using the same
KR100443524B1 (en) * 1998-06-30 2004-10-26 주식회사 하이닉스반도체 Thinning method of photoresist film using photoresist film processing substrate support

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208959A (en) * 1992-06-24 1994-07-26 Anelva Corp Cvd device, multi-chamber type cvd device and its substrate processing method
KR100443524B1 (en) * 1998-06-30 2004-10-26 주식회사 하이닉스반도체 Thinning method of photoresist film using photoresist film processing substrate support
JP2003502501A (en) * 1999-06-19 2003-01-21 ゼニテックインコーポレイテッド Chemical vapor deposition reactor and thin film forming method using the same
JP4726369B2 (en) * 1999-06-19 2011-07-20 エー・エス・エムジニテックコリア株式会社 Chemical vapor deposition reactor and thin film forming method using the same

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