JP7600545B2 - Superconducting device and manufacturing method thereof - Google Patents

Description

The present invention relates to a superconducting device and a method for manufacturing the same.

In order to integrate superconducting circuits, the use of a structure in which a superconducting circuit integrated chip carrying an integrated circuit is flip-chip mounted on a circuit board is being considered. In this structure, capacitive coupling, which can reduce the wiring of the integrated circuit, and non-contact coupling using inductive coupling are seen as promising methods to suppress signal reflection and interference and ensure the necessary signal quality (transmission characteristics).

A specific structure, for example, can be such that the superconducting integrated circuit chip is provided with the required number of capacitive coupling circuits and inductive coupling circuits for signal input and output, and non-contact coupling circuits are provided on the circuit board at corresponding positions. In order for the two non-contact coupling circuits to form a good non-contact coupling, a technique is required to couple the superconducting integrated circuit chip and the circuit board while maintaining a specified distance between them.

A technology that meets the above requirements is disclosed, for example, in Patent Document 1. In the technology of Patent Document 1, a second metal layer made of tin or tin and lead is laminated on the superconducting wiring provided on the circuit board, and the electrodes of the second metal layer are connected with solder to the electrodes of the superconducting element. In this technology, a second metal layer with good solder wettability is formed on the superconducting wiring to connect the electrodes of the superconducting element and the superconducting wiring of the circuit board. This makes it possible to obtain a highly reliable connection between the superconducting element and the circuit board.

Patent No. 2813093

However, the structure disclosed in Patent Document 1 had the problem that it was not possible to accurately control the distance between the non-contact coupling circuit of the superconducting integrated circuit chip and the non-contact coupling circuit of the circuit board. This was because there was a possibility that the position would shift while the molten solder was solidifying. As a result, there were cases where the input/output characteristics could not be obtained as designed.

The present invention was made in consideration of the above problems, and aims to provide a superconducting device that can obtain the input/output characteristics as designed with non-contact coupling, and a method for manufacturing the same.

In order to solve the above problems, the superconducting device of the present invention has a superconducting integrated circuit chip and a circuit board. The superconducting integrated circuit chip has a first electrode made of a first superconducting material and a first non-contact coupling circuit on its surface. The circuit board has a second electrode made of a second superconducting material and a second non-contact coupling circuit on its surface. The second electrode has a cylindrical protrusion of a predetermined height and a flat upper end surface. The upper end surface of the protrusion is directly joined to the surface of the first electrode, and the first non-contact coupling circuit and the second non-contact coupling circuit are arranged opposite each other.

The method for manufacturing a superconducting device of the present invention uses a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on its surface, and a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on its surface. A cylindrical protrusion of a predetermined height and with a flat upper end surface is then formed on the second electrode, and the surface of the first electrode and the upper surface of the protrusion are directly joined, so that the first non-contact coupling circuit and the second non-contact coupling circuit are arranged opposite each other.

The effect of the present invention is to provide a superconducting device that can obtain the input/output characteristics as designed with non-contact coupling, and a method for manufacturing the same.

1 is a cross-sectional view showing a configuration of a superconducting device according to a first embodiment. FIG. 11 is a plan view showing a superconducting integrated circuit chip used in a superconducting device of a second embodiment. FIG. 11 is a plan view showing a circuit board used in a superconducting device according to a second embodiment. FIG. 4 is a cross-sectional view showing a superconducting device according to a second embodiment. 6A to 6C are cross-sectional views showing a first part of a method for manufacturing a circuit board according to a second embodiment. 10A to 10C are cross-sectional views showing a second part of the method for manufacturing the circuit board according to the second embodiment. 10A to 10C are cross-sectional views showing a third part of the method for manufacturing the circuit board according to the second embodiment. 10A to 10C are cross-sectional views showing a fourth part of the method for manufacturing the circuit board according to the second embodiment. 5 is a cross-sectional view showing a first part of a method for manufacturing a superconducting device according to a second embodiment. FIG. 6 is a cross-sectional view showing a second part of the method for manufacturing a superconducting device according to the second embodiment. FIG. FIG. 11 is a cross-sectional view showing a third part of the method for manufacturing a superconducting device according to the second embodiment. FIG. 11 is a cross-sectional view showing a superconducting device according to a third embodiment. FIG. 11 is a cross-sectional view showing a superconducting device according to a fourth embodiment.

Below, an embodiment of the present invention will be described in detail with reference to the drawings. However, the embodiment described below has limitations that are technically preferable for implementing the present invention, but does not limit the scope of the invention to the following. Note that similar components in each drawing are given the same numbers, and descriptions may be omitted.

(First embodiment)
1 is a cross-sectional view showing a superconducting device 1 of this embodiment. The superconducting device 1 has a superconducting integrated circuit chip 10 and a circuit board 20. The superconducting integrated circuit chip 10 has a first electrode 11 made of a first superconducting material and a first non-contact coupling circuit 12 on its surface. The circuit board 20 has a second electrode 21 made of a second superconducting material and a second non-contact coupling circuit 22 on its surface. The second electrode 21 has a cylindrical protrusion 21a with a predetermined height and a flat upper end surface. The upper end surface 21b of the protrusion 21a is directly joined to the surface of the first electrode 11, and the first non-contact coupling circuit 12 and the second non-contact coupling circuit 22 are arranged opposite to each other.

With the above configuration, the presence of the protrusion 21a allows the distance between the first non-contact coupling circuit 12 and the second non-contact coupling circuit to be accurately controlled. As a result, input/output characteristics can be obtained as designed with non-contact coupling.

Second Embodiment
In this embodiment, a superconducting device that is easier to manufacture than the first embodiment will be described. FIG. 2 is a plan view showing a superconducting integrated circuit chip 100 used in the superconducting device. The superconducting integrated circuit chip 100 has a chip base material 101, and a first electrode 110 made of a first superconducting material and a first non-contact coupling circuit 120 are formed on the surface of the chip base material 101. The first electrode 110 is connected to, for example, a ground circuit (not shown). The first non-contact coupling circuit 120 is connected to, for example, a superconducting element (not shown). For the first superconducting material, for example, niobium, niobium nitride, aluminum, indium, lead, tin, rhenium, palladium, titanium, titanium nitride, tantalum, or an alloy containing these can be used. For example, silicon can be used for the chip base material 101. The first non-contact coupling circuit 120 is, for example, a capacitive coupling circuit or an inductive coupling circuit for inputting and outputting signals to and from a circuit board 200.

Figure 3 is a plan view showing a circuit board 200 used in a superconducting device. The substrate base material 201 of the circuit board 200 can be, for example, silicon. A second electrode 210 made of a second superconducting material and a second non-contact coupling circuit 220 are formed on the surface of the circuit board 200. A columnar protrusion 212 is formed on the circuit board 200, and a protrusion 211 made of a second superconducting material is formed covering the side surface of the protrusion 212, and the protrusion 211 forms a part of the second electrode 210. That is, the second electrode 210 has a cylindrical protrusion 211 having a predetermined height and a flat upper end surface 211a. For example, niobium, niobium nitride, aluminum, indium, lead, tin, rhenium, palladium, titanium, titanium nitride, tantalum, or an alloy containing these can be used as the second superconducting material. The second electrode 210 is connected to, for example, a ground circuit not shown. The second non-contact coupling circuit 220 is connected, for example, to an electronic circuit (not shown). If the circuit board 200 is further connected to an external electronic device, the circuit board serves as an interposer.

The upper end surface 211a of the protrusion 211 is a flat and smooth surface, and is formed so that the roughness is, for example, Ra 1 nm or less. The height of the protrusion 211 is set to a height that allows the designed input/output characteristics of the signal to be obtained between the non-contact coupling between the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220. A specific numerical value can be, for example, a height of 2 μm to 10 μm.

Figure 4 is a cross-sectional view showing a superconducting device 1000 formed by joining a superconducting integrated circuit chip 100 and a circuit board 200.

The second electrode 210 of the circuit board 200 is formed by laminating a thin film of a second superconducting material on the wiring section 230 formed on the substrate base material 201. The wiring section 230 can be formed using, for example, copper, silver, gold, platinum, or an alloy containing these. By providing the wiring section, it is possible to improve heat dissipation and perform processing in a normal conductive state. The protrusion section 211 is formed as a cylindrical structure that covers the side of a columnar protrusion 212 made of a material different from the second superconducting material. The protrusion 212 can be formed using metals such as copper, silver, gold, platinum, or an alloy containing these. In order to ensure the adhesive strength between the second electrode 210 and the wiring section 230, a base such as titanium or titanium nitride may be added. In addition, the wiring section 230 may be configured to have a base layer so as to increase the adhesiveness between the wiring section 230 and the substrate base material 201.

The superconducting integrated circuit chip 100 and the circuit board 200 are connected and fixed by directly joining the first electrode 110 and the upper end surface 211a of the protrusion 211 of the second electrode 210. This connection is so-called face-down mounting, in which the circuit surface of the superconducting integrated circuit chip 100 faces the circuit surface of the circuit board 200. Here, the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 are accurately positioned so that they face each other. The distance between them is accurately controlled by the protrusion 211. As a result, it is possible to obtain the desired values for the capacitance in capacitive coupling and the mutual inductance in inductive coupling.

The upper end surface 211a of the protrusion 211 and the first electrode 110 are joined by activating the surfaces and then bringing them into contact with each other. This technique is commonly known as room temperature bonding. This bonding creates a strong bond between the first electrode 110 and the upper end surface 211a of the protrusion 211, with an amorphous layer formed at the interface by the superconducting material that constitutes each of them.

In the above description, a structure in which the second superconducting material thin film is not disposed on the second non-contact coupling circuit 220 has been shown, but a structure in which the second superconducting material thin film is laminated on the second non-contact coupling circuit 220 may also be used. In addition, the shape and arrangement of the protrusions 211 shown in FIG. 4 are not limited to this, and a polygonal cylindrical shape or the like can also be applied, and they can be disposed at any position where the designed input/output characteristics are obtained. In addition, an example in which the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 are shaped like a cross has been shown, but this is not a limitation and any shape can be used. In addition, an example in which four protrusions 211 are disposed around the second non-contact coupling circuit 220 has been shown, but this is not a limitation and any arrangement can be used.

Next, a method for forming the protrusion 211 on the second electrode 210 of the circuit board 200 will be described. First, as shown in the cross-sectional view of FIG. 5, the second non-contact coupling circuit 220, the wiring section 230, and the columnar protrusion 212 are formed on the surface of the substrate base material 201, and the superconductor film 210a that is the basis of the second electrode 210 is formed so as to cover the protrusion 212. This structure is formed by film formation, photolithography, etching, etc., but as these are common methods, detailed explanations will be omitted.

Next, as shown in FIG. 6, a buried layer 300 is formed to flatten the surface until the superconductor film 210a covering the upper surface of the protrusion 212 is buried. The buried layer 300 can be made of, for example, a resin.

Next, as shown in FIG. 7, planarization is performed using cutting with a surface planer or polishing by CMP until the superconductor film 210a on the protrusion 212 is removed and the height of the protrusion 212 and the superconductor film 210a reaches a predetermined value. Here, CMP stands for Chemical Mechanical Polishing. This planarization process flattens and smoothes the upper end surface of the superconductor film 210a covering the side surface of the protrusion 212. This process then processes the surface roughness of the upper end surface of the superconductor film 210a to, for example, Ra 1 nm or less.

Next, as shown in FIG. 8, the buried layer 300 is removed to complete the circuit board 200 in which the second electrode 210 has a protrusion 211.

Next, a method for manufacturing the superconducting device 1000 will be described. First, as shown in FIG. 9, the superconducting integrated circuit chip 100 and the circuit board 200 are placed in a vacuum chamber (not shown) with their bonding surfaces facing each other, and a vacuum is drawn. At this time, the superconducting integrated circuit chip 100 is fixed by a chip fixing jig 400. As a fixing method, a clamp method or an electrostatic chuck method can be applied. The circuit board 200 is also fixed by a substrate fixing jig 410, and a similar fixing method can be applied. The degree of vacuum in the chamber is preferably about 10 ⁻⁶ Pa, for example.

Next, as shown in FIG. 10, an activation device 500 is used to remove adsorbed materials and oxides on the surface of the first electrode 110, which will be the joint of the superconducting integrated circuit chip 100, to activate the joint. As the activation device 500, for example, a device that irradiates ions or neutral atomic beams can be used. Similarly, the activation device 500 is used to remove adsorbed materials and oxides on the surface of the upper end surface 211a of the protrusion 211, which will be the joint of the circuit board 200, to activate the joint.

Next, as shown in FIG. 11, the superconducting integrated circuit chip 100 and the circuit board 200 are aligned so that the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 face each other. Then, while maintaining the vacuum, the first electrode 110 and the upper surface 211a of the protrusion 211 are brought into contact and pressurized. The temperature may be, for example, room temperature. At this time, the first superconducting material of the first electrode 110 and the second superconducting material of the upper surface 211a of the protrusion 211 form an amorphous layer at the bonding interface, and the two are firmly bonded. Although not shown, for example, alignment marks can be provided on each of the superconducting integrated circuit chip 100 and the circuit board 200, and the positions can be adjusted using a transmitted image taken by an infrared camera, thereby aligning the two.

As described above, according to this embodiment, it is possible to obtain the signal input/output characteristics as designed with non-contact coupling. This is because the second electrode of the circuit board has a protrusion of a predetermined height with a flat upper end surface, so that the non-contact coupling circuit of the superconducting integrated circuit chip and the non-contact coupling circuit on the circuit board can be mounted with a high degree of positioning at a predetermined interval.

In addition, high bonding reliability and performance can be ensured. This is because activating and bonding the bonding surfaces in a vacuum allows the upper end surfaces of the first and second electrodes to be bonded without reoxidation. Furthermore, because bonding is performed at room temperature, there is no change in the state of the superconducting element due to heating, and no misalignment of the mounting position due to thermal expansion of the components, and high performance can be maintained.

Furthermore, when the first and second superconducting materials are the same material, high joint reliability can be ensured even in operation in an extremely low temperature environment. This is because the same superconducting materials are directly joined together. With this configuration, damage due to stress caused by differences in the thermal expansion coefficients of the components can be suppressed, particularly at the extremely low temperatures (10 mK) in which superconducting circuits are used.

In addition, stable electrical characteristics can be ensured. This is because by joining the same superconducting materials together, a compound layer that inhibits the superconducting characteristics is not formed at the joining interface.

Third Embodiment
In the second embodiment, it has been exemplified that the protrusions provided on the circuit board can be formed using metals such as copper, silver, gold, platinum, alloys containing these metals, etc. In the present embodiment, another method for forming the protrusions will be described.

Figure 12 is a cross-sectional view showing the superconducting device 1100 of this embodiment. The circuit board 200a used in the superconducting device 1100 of this embodiment has a protrusion 212a formed from a substrate base material 201a. A thin film of the wiring part 230a and a film of the second electrode 210 are laminated to cover the side surface of the protrusion 212a, forming the protrusion 211. The upper end surface 211a of the protrusion 211, the upper end surface of the wiring part 230, and the upper surface of the protrusion 212a are flattened and smoothed by a method similar to that of the second embodiment. The upper end surface 211a of the second electrode 210 and the first electrode are joined. For example, silicon can be used as the substrate base material 201a. Various methods for performing three-dimensional processing with high precision have been developed for silicon, and the protrusion 212a can be formed with high precision using these methods. The configuration and manufacturing method for joining the upper end surface 211a of the protrusion 211 to the first electrode 110 are the same as those in the second embodiment.

As in the second embodiment, metals such as copper, silver, gold, platinum, or alloys containing these metals can be used for the wiring portion 230a. In addition, to ensure the adhesive strength between the second electrode 210 and the wiring portion 230, a base layer such as titanium or titanium nitride may be added. In addition, the wiring portion 230a may have a base layer such as Ti to increase the adhesiveness between the wiring portion 230a and the substrate base material 201a.

According to this embodiment, by forming the protrusion 212a from the substrate base material 201a, which is resistant to deformation (high rigidity), and forming the protrusion 211, deformation of the protrusion 211 due to pressure can be suppressed when mounting the superconducting integrated circuit chip 100. For example, silicon is a material that is less prone to deformation than copper. With the above configuration, the distance between the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 can be positioned with higher accuracy. As a result, it becomes possible to bring the input/output characteristics in non-contact coupling closer to the design values.

(Fourth embodiment)
In this embodiment, a configuration that facilitates bonding between a first electrode and a second electrode will be described. In the second and third embodiments, an example was described in which the inner protrusion of the protrusion of the second electrode has a flat upper surface that is the same height as the protrusion. In this embodiment, a configuration will be described in which the upper surface of the protrusion has a recess that becomes lower toward the center.

Figure 13 is a cross-sectional view showing the superconducting device 1200 of this embodiment. As shown in Figure 13, the protrusion 212b arranged on the circuit board 200a of this embodiment has a concave upper surface 212c whose height decreases toward the center. Such a shape can be formed, for example, by using CMP for the planarization process described in the second embodiment and selecting an appropriate CMP slurry (abrasive). In other words, it can be realized by selecting a slurry that removes the material of the protrusion 212b faster than the material of the second electrode 210. This phenomenon in which one material is removed more than another material is called dishing, and is an undesirable phenomenon in general planarization. However, in this embodiment, dishing is used to obtain the desired concave shape.

By making the upper surface 212c of the protrusion 212b into a concave shape as described above, it is possible to reduce the pressure applied when bonding the upper surface 211a of the protrusion 211 of the second electrode 210 to the first electrode 110. This is because the area of contact between the protrusion 211 and the first electrode 110 is reduced, and therefore the pressure applied per unit area is greater even if the overall pressure applied is the same. By reducing the pressure applied during bonding, deformation of each component is suppressed, and the distance between the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 can be controlled with greater precision.

The present invention has been described above using the first to fourth embodiments as exemplary examples. However, the present invention is not limited to the above-mentioned embodiments. In other words, the present invention can be applied in various aspects that can be understood by a person skilled in the art within the scope of the present invention.

A part or all of the above-described embodiments can be described as, but is not limited to, the following supplementary notes.
(Appendix 1)
a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof;
a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof;
having
the second electrode has a cylindrical protrusion having a predetermined height and a flat upper end surface,
a surface of the first electrode and an upper end surface of the protrusion of the second electrode are directly joined to each other;
A superconducting device, characterized in that the first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite each other.
(Appendix 2)
2. The superconducting device according to claim 1, wherein a protrusion made of a material different from the second superconducting material is disposed inside the second superconducting material in the protruding portion.
(Appendix 3)
3. The superconducting device according to claim 2, wherein the different material is the same material as a base material of the circuit board.
(Appendix 4)
3. The superconducting device of claim 2, wherein the different material is a metal.
(Appendix 5)
5. The superconducting device according to claim 2, wherein the upper surface of the protrusion has a concave shape that decreases in height toward the center.
(Appendix 6)
6. The superconducting device according to any one of claims 1 to 5, wherein a joint between the first electrode and the protrusion of the second electrode has an amorphous layer containing the first superconducting material and the second superconducting material.
(Appendix 7)
7. The superconducting device according to claim 1, wherein the upper end surface of the protrusion has an arithmetic mean roughness Ra of 1 nm or less.
(Appendix 8)
8. The superconducting device according to claim 1, wherein the first electrode and the second electrode are ground electrodes.
(Appendix 9)
9. The superconducting device according to any one of claims 1 to 8, wherein at least one of the first superconducting material and the second superconducting material is niobium.
(Appendix 10)
10. The superconducting device according to any one of claims 1 to 9, wherein the first superconducting material and the second superconducting material are the same superconducting material.
(Appendix 11)
A method for manufacturing a superconducting device having a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof, and a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof, comprising:
A cylindrical protrusion having a predetermined height and a flat upper end surface is formed on the second electrode;
directly bonding a surface of the first electrode and the upper end surface of the protrusion of the second electrode;
a first non-contact coupling circuit and a second non-contact coupling circuit disposed opposite each other;
(Appendix 12)
The superconducting integrated circuit chip and the circuit board are placed in a chamber with the first electrode and the second electrode facing each other;
The chamber is evacuated,
activating the first electrode and the top end surface of the protrusion of the second electrode;
Aligning the first non-contact coupling circuit and the second non-contact coupling circuit so that they face each other;
while maintaining the vacuum level of the chamber, the first electrode and the protrusion of the second electrode are brought into contact with each other and pressurized.
12. The method for manufacturing a superconducting device according to claim 11,
(Appendix 13)
13. The method for manufacturing a superconducting device according to claim 11 or 12, further comprising forming a protrusion on the circuit board using a material different from the second superconducting material, and forming a layer of the second superconducting material so as to cover a side surface of the protrusion.
(Appendix 14)
14. The method for manufacturing a superconducting device according to claim 13, wherein the different material is the same material as a base material of the circuit board.
(Appendix 15)
14. The method for manufacturing a superconducting device according to claim 13, wherein the different material is a metal.
(Appendix 16)
16. The method for manufacturing a superconducting device according to any one of claims 13 to 15, further comprising cutting or polishing the protrusions and the layer of the second superconducting material covering the protrusions to a predetermined height.
(Appendix 17)
17. The method for manufacturing a superconducting device according to claim 16, wherein the upper surface of the protrusion is shaped so that its height decreases toward the center.
(Appendix 18)
18. The method for manufacturing a superconducting device according to any one of claims 11 to 17, wherein the upper end surface of the protrusion has an arithmetic mean roughness Ra of 1 nm or less.
(Appendix 19)
19. The method for manufacturing a superconducting device according to any one of claims 11 to 18, wherein at least one of the first superconducting material and the second superconducting material is niobium.
(Appendix 20)
20. The method for manufacturing a superconducting device according to any one of claims 11 to 19, wherein the first superconducting material and the second superconducting material are the same superconducting material.

REFERENCE SIGNS LIST 1, 1000, 1100 Superconducting device 10, 100 Superconducting integrated circuit chip 11, 110 First electrode 12, 120 First non-contact coupling circuit 20, 200 Circuit board 21, 210 Second electrode 21a, 211 Protrusion 21b, 211a Upper end surface 22, 220 Second non-contact coupling circuit 101 Chip base material 201, 201a Substrate base material 210a Superconductor film 212, 212a Protrusion 230 Wiring portion 300 Buried layer 400 Chip fixing jig 410 Substrate fixing jig 500 Activation device

Claims (9)

a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof;
a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof;
having
the second electrode has a cylindrical protrusion having a predetermined height and a flat upper end surface,
a surface of the first electrode and an upper end surface of the protrusion of the second electrode are directly joined to each other;
the first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite to each other,
A protrusion made of a material different from the second superconducting material is disposed inside the second superconducting material in the protruding portion.
A superconducting device comprising: 2. The superconducting device of claim 1 , wherein the different material is the same material as a base material of the circuit board. 3. The superconducting device according to claim 2 , wherein the upper surface of the protrusion has a concave shape that decreases in height toward the center. 4. The superconducting device according to claim 1, wherein a joint between the first electrode and the protrusion of the second electrode has an amorphous layer containing the first superconducting material and the second superconducting material. 5. The superconducting device according to claim 1 , wherein the upper end surface of the protrusion has an arithmetic mean roughness Ra of 1 nm or less. 6. The superconducting device according to claim 1, wherein the first electrode and the second electrode are ground electrodes. 7. The superconducting device according to claim 1, wherein the first superconducting material and the second superconducting material are the same superconducting material. A method for manufacturing a superconducting device having a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof, and a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof, comprising:
A cylindrical protrusion having a predetermined height and a flat upper end surface is formed on the second electrode;
directly bonding a surface of the first electrode and the upper end surface of the protrusion of the second electrode;
The first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite to each other ,
The protrusion is formed by laminating the second superconducting material on a protrusion made of a material different from the second superconducting material.
A method for manufacturing a superconducting device comprising the steps of: The superconducting integrated circuit chip and the circuit board are placed in a chamber with the first electrode and the second electrode facing each other;
The chamber is evacuated,
activating the first electrode and the top end surface of the protrusion of the second electrode;
Aligning the first non-contact coupling circuit and the second non-contact coupling circuit so that they face each other;
while maintaining the vacuum level of the chamber, the first electrode and the protrusion of the second electrode are brought into contact with each other and pressurized.
9. The method of claim 8, wherein the superconducting device is made of a material selected from the group consisting of fluororesin, ...rubber, and fluororesin.

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