JP7507862B2 - Alkali-soluble resin, photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for forming wiring pattern - Google Patents
Alkali-soluble resin, photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for forming wiring pattern Download PDFInfo
- Publication number
- JP7507862B2 JP7507862B2 JP2022535935A JP2022535935A JP7507862B2 JP 7507862 B2 JP7507862 B2 JP 7507862B2 JP 2022535935 A JP2022535935 A JP 2022535935A JP 2022535935 A JP2022535935 A JP 2022535935A JP 7507862 B2 JP7507862 B2 JP 7507862B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- meth
- photosensitive
- alkali
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 title claims description 72
- 239000011347 resin Substances 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 63
- 239000011342 resin composition Substances 0.000 title claims description 41
- -1 acrylate ester Chemical class 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 36
- 239000007864 aqueous solution Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 14
- 239000003999 initiator Substances 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 13
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 7
- 125000002221 trityl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C([*])(C1=C(C(=C(C(=C1[H])[H])[H])[H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- 125000001981 tert-butyldimethylsilyl group Chemical group [H]C([H])([H])[Si]([H])(C([H])([H])[H])[*]C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims 1
- 125000002298 terpene group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 68
- 239000000243 solution Substances 0.000 description 41
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 40
- 238000011161 development Methods 0.000 description 30
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 28
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 26
- 239000000178 monomer Substances 0.000 description 26
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 20
- 239000001294 propane Substances 0.000 description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 229940059574 pentaerithrityl Drugs 0.000 description 11
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 10
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 8
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000005227 gel permeation chromatography Methods 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 229920001515 polyalkylene glycol Polymers 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 150000003673 urethanes Chemical class 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OAZWDJGLIYNYMU-UHFFFAOYSA-N Leucocrystal Violet Chemical compound C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 OAZWDJGLIYNYMU-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 3
- 235000019341 magnesium sulphate Nutrition 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 3
- 150000003440 styrenes Chemical class 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- 150000007934 α,β-unsaturated carboxylic acids Chemical class 0.000 description 3
- CDUQMGQIHYISOP-RMKNXTFCSA-N (e)-2-cyano-3-phenylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C\C1=CC=CC=C1 CDUQMGQIHYISOP-RMKNXTFCSA-N 0.000 description 2
- DTCCVIYSGXONHU-CJHDCQNGSA-N (z)-2-(2-phenylethenyl)but-2-enedioic acid Chemical compound OC(=O)\C=C(C(O)=O)\C=CC1=CC=CC=C1 DTCCVIYSGXONHU-CJHDCQNGSA-N 0.000 description 2
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 2
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KSMGAOMUPSQGTB-UHFFFAOYSA-N 9,10-dibutoxyanthracene Chemical compound C1=CC=C2C(OCCCC)=C(C=CC=C3)C3=C(OCCCC)C2=C1 KSMGAOMUPSQGTB-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZGUNAGUHMKGQNY-ZETCQYMHSA-N L-alpha-phenylglycine zwitterion Chemical compound OC(=O)[C@@H](N)C1=CC=CC=C1 ZGUNAGUHMKGQNY-ZETCQYMHSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229960001441 aminoacridine Drugs 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229910021538 borax Inorganic materials 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- 229930016911 cinnamic acid Natural products 0.000 description 2
- 235000013985 cinnamic acid Nutrition 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 235000001671 coumarin Nutrition 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M lithium hydroxide Inorganic materials [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- 229940107698 malachite green Drugs 0.000 description 2
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004328 sodium tetraborate Substances 0.000 description 2
- 235000010339 sodium tetraborate Nutrition 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- PTVDYMGQGCNETM-UHFFFAOYSA-N trityl 2-methylprop-2-enoate Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(OC(=O)C(=C)C)C1=CC=CC=C1 PTVDYMGQGCNETM-UHFFFAOYSA-N 0.000 description 2
- FEIQOMCWGDNMHM-KBXRYBNXSA-N (2e,4e)-5-phenylpenta-2,4-dienoic acid Chemical compound OC(=O)\C=C\C=C\C1=CC=CC=C1 FEIQOMCWGDNMHM-KBXRYBNXSA-N 0.000 description 1
- FWUIHQFQLSWYED-ARJAWSKDSA-N (z)-4-oxo-4-propan-2-yloxybut-2-enoic acid Chemical compound CC(C)OC(=O)\C=C/C(O)=O FWUIHQFQLSWYED-ARJAWSKDSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- SCEFCWXRXJZWHE-UHFFFAOYSA-N 1,2,3-tribromo-4-(2,3,4-tribromophenyl)sulfonylbenzene Chemical compound BrC1=C(Br)C(Br)=CC=C1S(=O)(=O)C1=CC=C(Br)C(Br)=C1Br SCEFCWXRXJZWHE-UHFFFAOYSA-N 0.000 description 1
- 229940008841 1,6-hexamethylene diisocyanate Drugs 0.000 description 1
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical compound CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 description 1
- ONVANMNFZQFRQW-UHFFFAOYSA-N 2,3-bis(4-methoxyphenyl)-5-[2-(4-methoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1C=CC1=CC(C=2C=CC(OC)=CC=2)N(C=2C=CC(OC)=CC=2)N1 ONVANMNFZQFRQW-UHFFFAOYSA-N 0.000 description 1
- JFWOLMRNYJBCCJ-UHFFFAOYSA-N 2,4-bis(2-chlorophenyl)-2-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-5-(3,4-dimethoxyphenyl)imidazole Chemical compound C1=C(OC)C(OC)=CC=C1C1=NC(C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)(C=2C(=CC=CC=2)Cl)N=C1C1=CC=CC=C1Cl JFWOLMRNYJBCCJ-UHFFFAOYSA-N 0.000 description 1
- RKFITYIZOSRLCV-UHFFFAOYSA-N 2-(2,4-difluorophenyl)-2-[2-(2,4-difluorophenyl)-4,5-bis(3-methoxyphenyl)imidazol-2-yl]-4,5-bis(3-methoxyphenyl)imidazole Chemical compound COC1=CC=CC(C=2C(=NC(N=2)(C=2C(=CC(F)=CC=2)F)C2(N=C(C(=N2)C=2C=C(OC)C=CC=2)C=2C=C(OC)C=CC=2)C=2C(=CC(F)=CC=2)F)C=2C=C(OC)C=CC=2)=C1 RKFITYIZOSRLCV-UHFFFAOYSA-N 0.000 description 1
- JCYHWKVBYDDNKD-UHFFFAOYSA-N 2-(2,5-difluorophenyl)-2-[2-(2,5-difluorophenyl)-4,5-bis(3-methoxyphenyl)imidazol-2-yl]-4,5-bis(3-methoxyphenyl)imidazole Chemical compound COC1=CC=CC(C=2C(=NC(N=2)(C=2C(=CC=C(F)C=2)F)C2(N=C(C(=N2)C=2C=C(OC)C=CC=2)C=2C=C(OC)C=CC=2)C=2C(=CC=C(F)C=2)F)C=2C=C(OC)C=CC=2)=C1 JCYHWKVBYDDNKD-UHFFFAOYSA-N 0.000 description 1
- GBOJZXLCJZDBKO-UHFFFAOYSA-N 2-(2-chlorophenyl)-2-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C1(C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)N=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=N1 GBOJZXLCJZDBKO-UHFFFAOYSA-N 0.000 description 1
- TVIPVNDJQQUGOQ-UHFFFAOYSA-N 2-(2-fluorophenyl)-2-[2-(2-fluorophenyl)-4,5-bis(3-methoxyphenyl)imidazol-2-yl]-4,5-bis(3-methoxyphenyl)imidazole Chemical compound COC1=CC=CC(C=2C(=NC(N=2)(C=2C(=CC=CC=2)F)C2(N=C(C(=N2)C=2C=C(OC)C=CC=2)C=2C=C(OC)C=CC=2)C=2C(=CC=CC=2)F)C=2C=C(OC)C=CC=2)=C1 TVIPVNDJQQUGOQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OBNGKJXPWPAMFU-UHFFFAOYSA-N 2-(4-methoxyphenyl)-3-(4-propan-2-ylphenyl)-5-[2-(4-propan-2-ylphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C=CC(=CC=2)C(C)C)C=C(C=CC=2C=CC(=CC=2)C(C)C)N1 OBNGKJXPWPAMFU-UHFFFAOYSA-N 0.000 description 1
- VPPIVBRGICDJDU-UHFFFAOYSA-N 2-(4-methoxyphenyl)-3-phenyl-5-(2-phenylethenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C=CC=CC=2)C=C(C=CC=2C=CC=CC=2)N1 VPPIVBRGICDJDU-UHFFFAOYSA-N 0.000 description 1
- QXAAPOHSFLIXEH-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(2,3-dimethoxyphenyl)-5-[2-(2,3-dimethoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound COC1=CC=CC(C=CC=2NN(C(C=2)C=2C(=C(OC)C=CC=2)OC)C=2C=CC(=CC=2)C(C)(C)C)=C1OC QXAAPOHSFLIXEH-UHFFFAOYSA-N 0.000 description 1
- BNEDKLQKZURRFW-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(2,4-dimethoxyphenyl)-5-[2-(2,4-dimethoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound COC1=CC(OC)=CC=C1C=CC1=CC(C=2C(=CC(OC)=CC=2)OC)N(C=2C=CC(=CC=2)C(C)(C)C)N1 BNEDKLQKZURRFW-UHFFFAOYSA-N 0.000 description 1
- IPWPUJCIHDDAPC-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(2,5-dimethoxyphenyl)-5-[2-(2,5-dimethoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound COC1=CC=C(OC)C(C=CC=2NN(C(C=2)C=2C(=CC=C(OC)C=2)OC)C=2C=CC(=CC=2)C(C)(C)C)=C1 IPWPUJCIHDDAPC-UHFFFAOYSA-N 0.000 description 1
- GCBVHRLIIGDROS-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(2,6-dimethoxyphenyl)-5-[2-(2,6-dimethoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound COC1=CC=CC(OC)=C1C=CC1=CC(C=2C(=CC=CC=2OC)OC)N(C=2C=CC(=CC=2)C(C)(C)C)N1 GCBVHRLIIGDROS-UHFFFAOYSA-N 0.000 description 1
- OKXRQGITEYXHPT-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(3,4-dimethoxyphenyl)-5-[2-(3,4-dimethoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound C1=C(OC)C(OC)=CC=C1C=CC1=CC(C=2C=C(OC)C(OC)=CC=2)N(C=2C=CC(=CC=2)C(C)(C)C)N1 OKXRQGITEYXHPT-UHFFFAOYSA-N 0.000 description 1
- GHEJAZCIVCANOG-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(3,5-dimethoxyphenyl)-5-[2-(3,5-dimethoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound COC1=CC(OC)=CC(C=CC=2NN(C(C=2)C=2C=C(OC)C=C(OC)C=2)C=2C=CC(=CC=2)C(C)(C)C)=C1 GHEJAZCIVCANOG-UHFFFAOYSA-N 0.000 description 1
- IZDOZIGWCCYBRL-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-3-(4-methoxyphenyl)-5-[2-(4-methoxyphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1C=CC1=CC(C=2C=CC(OC)=CC=2)N(C=2C=CC(=CC=2)C(C)(C)C)N1 IZDOZIGWCCYBRL-UHFFFAOYSA-N 0.000 description 1
- GMDJMLOOHULQEV-UHFFFAOYSA-N 2-(n-ethylanilino)acetic acid Chemical compound OC(=O)CN(CC)C1=CC=CC=C1 GMDJMLOOHULQEV-UHFFFAOYSA-N 0.000 description 1
- DVYVBENBIMEAJZ-UHFFFAOYSA-N 2-(n-methylanilino)acetic acid Chemical compound OC(=O)CN(C)C1=CC=CC=C1 DVYVBENBIMEAJZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- JQMPYPZEZKHJTJ-UHFFFAOYSA-N 2-[2,3-bis(fluoromethyl)phenyl]-2-[2-[2,3-bis(fluoromethyl)phenyl]-4,5-bis(3-methoxyphenyl)imidazol-2-yl]-4,5-bis(3-methoxyphenyl)imidazole Chemical compound FCC1=C(C=CC=C1CF)C1(N=C(C(=N1)C1=CC(=CC=C1)OC)C1=CC(=CC=C1)OC)C1(N=C(C(=N1)C1=CC(=CC=C1)OC)C1=CC(=CC=C1)OC)C1=C(C(=CC=C1)CF)CF JQMPYPZEZKHJTJ-UHFFFAOYSA-N 0.000 description 1
- NREFJJBCYMZUEK-UHFFFAOYSA-N 2-[2-[4-[2-[4-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]phenyl]propan-2-yl]phenoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound C1=CC(OCCOCCOC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OCCOCCOC(=O)C(C)=C)C=C1 NREFJJBCYMZUEK-UHFFFAOYSA-N 0.000 description 1
- HMENQNSSJFLQOP-UHFFFAOYSA-N 2-bromoprop-2-enoic acid Chemical compound OC(=O)C(Br)=C HMENQNSSJFLQOP-UHFFFAOYSA-N 0.000 description 1
- SZTBMYHIYNGYIA-UHFFFAOYSA-N 2-chloroacrylic acid Chemical compound OC(=O)C(Cl)=C SZTBMYHIYNGYIA-UHFFFAOYSA-N 0.000 description 1
- AKCRQHGQIJBRMN-UHFFFAOYSA-N 2-chloroaniline Chemical compound NC1=CC=CC=C1Cl AKCRQHGQIJBRMN-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- TWKGRZHFOJJWGP-UHFFFAOYSA-N 2-phenyl-3-(4-propan-2-ylphenyl)-5-[2-(4-propan-2-ylphenyl)ethenyl]-1,3-dihydropyrazole Chemical compound C1=CC(C(C)C)=CC=C1C=CC1=CC(C=2C=CC(=CC=2)C(C)C)N(C=2C=CC=CC=2)N1 TWKGRZHFOJJWGP-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- WUGOQZFPNUYUOO-UHFFFAOYSA-N 2-trimethylsilyloxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCO[Si](C)(C)C WUGOQZFPNUYUOO-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- ZXTUOCUHKOQQCK-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)-5-[2-(2,3-dimethoxyphenyl)ethenyl]-2-(4-methoxyphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C(=C(OC)C=CC=2)OC)C=C(C=CC=2C(=C(OC)C=CC=2)OC)N1 ZXTUOCUHKOQQCK-UHFFFAOYSA-N 0.000 description 1
- SWAMXXKWQFVBSI-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)-5-[2-(2,3-dimethoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound COC1=CC=CC(C=CC=2NN(C(C=2)C=2C(=C(OC)C=CC=2)OC)C=2C=CC(=CC=2)C(C)C)=C1OC SWAMXXKWQFVBSI-UHFFFAOYSA-N 0.000 description 1
- YCVSNZBGCXUYAK-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)-5-[2-(2,3-dimethoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound COC1=CC=CC(C=CC=2NN(C(C=2)C=2C(=C(OC)C=CC=2)OC)C=2C=CC=CC=2)=C1OC YCVSNZBGCXUYAK-UHFFFAOYSA-N 0.000 description 1
- ZJSOKHLIRTZIFY-UHFFFAOYSA-N 3-(2,4-dimethoxyphenyl)-5-[2-(2,4-dimethoxyphenyl)ethenyl]-2-(4-methoxyphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C(=CC(OC)=CC=2)OC)C=C(C=CC=2C(=CC(OC)=CC=2)OC)N1 ZJSOKHLIRTZIFY-UHFFFAOYSA-N 0.000 description 1
- SLBYYRXAPARAGE-UHFFFAOYSA-N 3-(2,4-dimethoxyphenyl)-5-[2-(2,4-dimethoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound COC1=CC(OC)=CC=C1C=CC1=CC(C=2C(=CC(OC)=CC=2)OC)N(C=2C=CC(=CC=2)C(C)C)N1 SLBYYRXAPARAGE-UHFFFAOYSA-N 0.000 description 1
- KCVVTXFNIHFLGX-UHFFFAOYSA-N 3-(2,4-dimethoxyphenyl)-5-[2-(2,4-dimethoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound COC1=CC(OC)=CC=C1C=CC1=CC(C=2C(=CC(OC)=CC=2)OC)N(C=2C=CC=CC=2)N1 KCVVTXFNIHFLGX-UHFFFAOYSA-N 0.000 description 1
- JONSDJROWBDSOJ-UHFFFAOYSA-N 3-(2,5-dimethoxyphenyl)-5-[2-(2,5-dimethoxyphenyl)ethenyl]-2-(4-methoxyphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C(=CC=C(OC)C=2)OC)C=C(C=CC=2C(=CC=C(OC)C=2)OC)N1 JONSDJROWBDSOJ-UHFFFAOYSA-N 0.000 description 1
- OTEJMCWJLGIEJD-UHFFFAOYSA-N 3-(2,5-dimethoxyphenyl)-5-[2-(2,5-dimethoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound COC1=CC=C(OC)C(C=CC=2NN(C(C=2)C=2C(=CC=C(OC)C=2)OC)C=2C=CC(=CC=2)C(C)C)=C1 OTEJMCWJLGIEJD-UHFFFAOYSA-N 0.000 description 1
- XGIKBNXXNDSMQM-UHFFFAOYSA-N 3-(2,5-dimethoxyphenyl)-5-[2-(2,5-dimethoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound COC1=CC=C(OC)C(C=CC=2NN(C(C=2)C=2C(=CC=C(OC)C=2)OC)C=2C=CC=CC=2)=C1 XGIKBNXXNDSMQM-UHFFFAOYSA-N 0.000 description 1
- QPNQZFBGCMBDJQ-UHFFFAOYSA-N 3-(2,6-dimethoxyphenyl)-5-[2-(2,6-dimethoxyphenyl)ethenyl]-2-(4-methoxyphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C(=CC=CC=2OC)OC)C=C(C=CC=2C(=CC=CC=2OC)OC)N1 QPNQZFBGCMBDJQ-UHFFFAOYSA-N 0.000 description 1
- WCHCRHUBHMFXCW-UHFFFAOYSA-N 3-(2,6-dimethoxyphenyl)-5-[2-(2,6-dimethoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound COC1=CC=CC(OC)=C1C=CC1=CC(C=2C(=CC=CC=2OC)OC)N(C=2C=CC(=CC=2)C(C)C)N1 WCHCRHUBHMFXCW-UHFFFAOYSA-N 0.000 description 1
- QSOSDSRECCIDKA-UHFFFAOYSA-N 3-(2,6-dimethoxyphenyl)-5-[2-(2,6-dimethoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound COC1=CC=CC(OC)=C1C=CC1=CC(C=2C(=CC=CC=2OC)OC)N(C=2C=CC=CC=2)N1 QSOSDSRECCIDKA-UHFFFAOYSA-N 0.000 description 1
- MGYIFSGATGHQOZ-UHFFFAOYSA-N 3-(3,4-dimethoxyphenyl)-5-[2-(3,4-dimethoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound C1=C(OC)C(OC)=CC=C1C=CC1=CC(C=2C=C(OC)C(OC)=CC=2)N(C=2C=CC(=CC=2)C(C)C)N1 MGYIFSGATGHQOZ-UHFFFAOYSA-N 0.000 description 1
- APYVTGGXPXFRBC-UHFFFAOYSA-N 3-(3,4-dimethoxyphenyl)-5-[2-(3,4-dimethoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound C1=C(OC)C(OC)=CC=C1C=CC1=CC(C=2C=C(OC)C(OC)=CC=2)N(C=2C=CC=CC=2)N1 APYVTGGXPXFRBC-UHFFFAOYSA-N 0.000 description 1
- PHFXLESAIOLNHR-UHFFFAOYSA-N 3-(3,5-dimethoxyphenyl)-5-[2-(3,5-dimethoxyphenyl)ethenyl]-2-(4-methoxyphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C=C(OC)C=C(OC)C=2)C=C(C=CC=2C=C(OC)C=C(OC)C=2)N1 PHFXLESAIOLNHR-UHFFFAOYSA-N 0.000 description 1
- MQVUIYGSDLJRKH-UHFFFAOYSA-N 3-(3,5-dimethoxyphenyl)-5-[2-(3,5-dimethoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound COC1=CC(OC)=CC(C=CC=2NN(C(C=2)C=2C=C(OC)C=C(OC)C=2)C=2C=CC(=CC=2)C(C)C)=C1 MQVUIYGSDLJRKH-UHFFFAOYSA-N 0.000 description 1
- ONZXDAZFTRWYQU-UHFFFAOYSA-N 3-(3,5-dimethoxyphenyl)-5-[2-(3,5-dimethoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound COC1=CC(OC)=CC(C=CC=2NN(C(C=2)C=2C=C(OC)C=C(OC)C=2)C=2C=CC=CC=2)=C1 ONZXDAZFTRWYQU-UHFFFAOYSA-N 0.000 description 1
- YFAXNJMQVZDYMU-UHFFFAOYSA-N 3-(4-methoxyphenyl)-5-[2-(4-methoxyphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1C=CC1=CC(C=2C=CC(OC)=CC=2)N(C=2C=CC(=CC=2)C(C)C)N1 YFAXNJMQVZDYMU-UHFFFAOYSA-N 0.000 description 1
- ZMESCNYFNZEIFB-UHFFFAOYSA-N 3-(4-methoxyphenyl)-5-[2-(4-methoxyphenyl)ethenyl]-2-phenyl-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1C=CC1=CC(C=2C=CC(OC)=CC=2)N(C=2C=CC=CC=2)N1 ZMESCNYFNZEIFB-UHFFFAOYSA-N 0.000 description 1
- VBQGUMALNVHLJC-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-5-[2-(4-tert-butylphenyl)ethenyl]-2-(4-methoxyphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(OC)=CC=C1N1C(C=2C=CC(=CC=2)C(C)(C)C)C=C(C=CC=2C=CC(=CC=2)C(C)(C)C)N1 VBQGUMALNVHLJC-UHFFFAOYSA-N 0.000 description 1
- PZMBOAFQWGJZQE-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-5-[2-(4-tert-butylphenyl)ethenyl]-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(C(C)C)=CC=C1N1C(C=2C=CC(=CC=2)C(C)(C)C)C=C(C=CC=2C=CC(=CC=2)C(C)(C)C)N1 PZMBOAFQWGJZQE-UHFFFAOYSA-N 0.000 description 1
- SDOXIVFCPINGQD-UHFFFAOYSA-N 3-phenyl-5-(2-phenylethenyl)-2-(4-propan-2-ylphenyl)-1,3-dihydropyrazole Chemical compound C1=CC(C(C)C)=CC=C1N1C(C=2C=CC=CC=2)C=C(C=CC=2C=CC=CC=2)N1 SDOXIVFCPINGQD-UHFFFAOYSA-N 0.000 description 1
- JKZFRKHYUVIIFN-UHFFFAOYSA-N 4-(furan-2-yl)but-2-enoic acid Chemical compound OC(=O)C=CCC1=CC=CO1 JKZFRKHYUVIIFN-UHFFFAOYSA-N 0.000 description 1
- GJNKQJAJXSUJBO-UHFFFAOYSA-N 9,10-diethoxyanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 GJNKQJAJXSUJBO-UHFFFAOYSA-N 0.000 description 1
- JWJMBKSFTTXMLL-UHFFFAOYSA-N 9,10-dimethoxyanthracene Chemical compound C1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 JWJMBKSFTTXMLL-UHFFFAOYSA-N 0.000 description 1
- JELGMNFSBVSQRB-UHFFFAOYSA-N 9,10-dipentoxyanthracene Chemical compound C1=CC=C2C(OCCCCC)=C(C=CC=C3)C3=C(OCCCCC)C2=C1 JELGMNFSBVSQRB-UHFFFAOYSA-N 0.000 description 1
- LBQJFQVDEJMUTF-UHFFFAOYSA-N 9,10-dipropoxyanthracene Chemical compound C1=CC=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 LBQJFQVDEJMUTF-UHFFFAOYSA-N 0.000 description 1
- TWERYGXNWRUOLX-UHFFFAOYSA-N 9-(10-acridin-9-yldecyl)acridine Chemical compound C1=CC=C2C(CCCCCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 TWERYGXNWRUOLX-UHFFFAOYSA-N 0.000 description 1
- BRYJNSOCCMOFLX-UHFFFAOYSA-N 9-(12-acridin-9-yldodecyl)acridine Chemical compound C1=CC=C2C(CCCCCCCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 BRYJNSOCCMOFLX-UHFFFAOYSA-N 0.000 description 1
- SJRKBYZUEBCVLI-UHFFFAOYSA-N 9-(14-acridin-9-yltetradecyl)acridine Chemical compound C1=CC=C2C(CCCCCCCCCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 SJRKBYZUEBCVLI-UHFFFAOYSA-N 0.000 description 1
- ZZPJTASVHPVFTJ-UHFFFAOYSA-N 9-(16-acridin-9-ylhexadecyl)acridine Chemical compound C1=CC=C2C(CCCCCCCCCCCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 ZZPJTASVHPVFTJ-UHFFFAOYSA-N 0.000 description 1
- GDVWNCNWFNTJII-UHFFFAOYSA-N 9-(18-acridin-9-yloctadecyl)acridine Chemical compound C1=CC=C2C(CCCCCCCCCCCCCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 GDVWNCNWFNTJII-UHFFFAOYSA-N 0.000 description 1
- WTAGSJAOBUKKCE-UHFFFAOYSA-N 9-(2-acridin-9-ylethyl)acridine Chemical compound C1=CC=C2C(CCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 WTAGSJAOBUKKCE-UHFFFAOYSA-N 0.000 description 1
- JTZSSNHZGQGDNU-UHFFFAOYSA-N 9-(20-acridin-9-ylicosyl)acridine Chemical compound C1=CC=C2C(CCCCCCCCCCCCCCCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 JTZSSNHZGQGDNU-UHFFFAOYSA-N 0.000 description 1
- KTPOHTDATNALFV-UHFFFAOYSA-N 9-(3-chlorophenyl)acridine Chemical compound ClC1=CC=CC(C=2C3=CC=CC=C3N=C3C=CC=CC3=2)=C1 KTPOHTDATNALFV-UHFFFAOYSA-N 0.000 description 1
- DOGGTYYFTFGYQM-UHFFFAOYSA-N 9-(3-methylphenyl)acridine Chemical compound CC1=CC=CC(C=2C3=CC=CC=C3N=C3C=CC=CC3=2)=C1 DOGGTYYFTFGYQM-UHFFFAOYSA-N 0.000 description 1
- WEGVLMACGSHSDS-UHFFFAOYSA-N 9-(4-acridin-9-ylbutyl)acridine Chemical compound C1=CC=C2C(CCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 WEGVLMACGSHSDS-UHFFFAOYSA-N 0.000 description 1
- VZRCSQXNWRZMAR-UHFFFAOYSA-N 9-(4-chlorophenyl)acridine Chemical compound C1=CC(Cl)=CC=C1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 VZRCSQXNWRZMAR-UHFFFAOYSA-N 0.000 description 1
- KORJZGKNZUDLII-UHFFFAOYSA-N 9-(4-methylphenyl)acridine Chemical compound C1=CC(C)=CC=C1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 KORJZGKNZUDLII-UHFFFAOYSA-N 0.000 description 1
- WCKMSJWQEMKTSO-UHFFFAOYSA-N 9-(6-acridin-9-ylhexyl)acridine Chemical compound C1=CC=C2C(CCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 WCKMSJWQEMKTSO-UHFFFAOYSA-N 0.000 description 1
- CTPHPWUULMTLAC-UHFFFAOYSA-N 9-(acridin-9-ylmethoxymethyl)acridine Chemical compound C1=CC=C2C(COCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 CTPHPWUULMTLAC-UHFFFAOYSA-N 0.000 description 1
- OEIFMECKBTXBME-UHFFFAOYSA-N 9-(acridin-9-ylmethylsulfanylmethyl)acridine Chemical compound C1=CC=C2C(CSCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 OEIFMECKBTXBME-UHFFFAOYSA-N 0.000 description 1
- ABBUYLONXZHGIU-UHFFFAOYSA-N 9-[2-(2-acridin-9-ylethylsulfanyl)ethyl]acridine Chemical compound C1=CC=C2C(CCSCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 ABBUYLONXZHGIU-UHFFFAOYSA-N 0.000 description 1
- XJGFWWJLMVZSIG-UHFFFAOYSA-N 9-aminoacridine Chemical compound C1=CC=C2C(N)=C(C=CC=C3)C3=NC2=C1 XJGFWWJLMVZSIG-UHFFFAOYSA-N 0.000 description 1
- MTRFEWTWIPAXLG-UHFFFAOYSA-N 9-phenylacridine Chemical compound C1=CC=CC=C1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 MTRFEWTWIPAXLG-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- QJUMRIWEMHVYGP-UHFFFAOYSA-N CC(=C)C(=O)OC(CC(O)CCl)COC(=O)C1=CC=CC=C1C(O)=O Chemical compound CC(=C)C(=O)OC(CC(O)CCl)COC(=O)C1=CC=CC=C1C(O)=O QJUMRIWEMHVYGP-UHFFFAOYSA-N 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- XLYMOEINVGRTEX-ARJAWSKDSA-N Ethyl hydrogen fumarate Chemical compound CCOC(=O)\C=C/C(O)=O XLYMOEINVGRTEX-ARJAWSKDSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CGDFPZKZSQKHJA-UHFFFAOYSA-N N,N-diethylacridin-9-amine Chemical compound C(C)N(C=1C2=CC=CC=C2N=C2C=CC=CC=12)CC CGDFPZKZSQKHJA-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- LPNLASIEYTWMBC-UHFFFAOYSA-N [tert-butyl(dimethyl)silyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)O[Si](C)(C)C(C)(C)C LPNLASIEYTWMBC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001251 acridines Chemical class 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N acrylic acid methyl ester Natural products COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- PRKQVKDSMLBJBJ-UHFFFAOYSA-N ammonium carbonate Chemical class N.N.OC(O)=O PRKQVKDSMLBJBJ-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000011162 ammonium carbonates Nutrition 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229960001506 brilliant green Drugs 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 150000004775 coumarins Chemical class 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- ZXJXZNDDNMQXFV-UHFFFAOYSA-M crystal violet Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1[C+](C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 ZXJXZNDDNMQXFV-UHFFFAOYSA-M 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- GGSUCNLOZRCGPQ-UHFFFAOYSA-N diethylaniline Chemical compound CCN(CC)C1=CC=CC=C1 GGSUCNLOZRCGPQ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229940105990 diglycerin Drugs 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- XLYMOEINVGRTEX-UHFFFAOYSA-N fumaric acid monoethyl ester Natural products CCOC(=O)C=CC(O)=O XLYMOEINVGRTEX-UHFFFAOYSA-N 0.000 description 1
- NKHAVTQWNUWKEO-UHFFFAOYSA-N fumaric acid monomethyl ester Natural products COC(=O)C=CC(O)=O NKHAVTQWNUWKEO-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012216 imaging agent Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000006115 industrial coating Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- RUAIJHHRCIHFEV-UHFFFAOYSA-N methyl 4-amino-5-chlorothiophene-2-carboxylate Chemical compound COC(=O)C1=CC(N)=C(Cl)S1 RUAIJHHRCIHFEV-UHFFFAOYSA-N 0.000 description 1
- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- JIBRFXMUEQDPGO-UHFFFAOYSA-N n,n-dimethylacridin-9-amine Chemical compound C1=CC=C2C(N(C)C)=C(C=CC=C3)C3=NC2=C1 JIBRFXMUEQDPGO-UHFFFAOYSA-N 0.000 description 1
- XYIKWCPPWRQYGA-UHFFFAOYSA-N n-pentylacridin-9-amine Chemical compound C1=CC=C2C(NCCCCC)=C(C=CC=C3)C3=NC2=C1 XYIKWCPPWRQYGA-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000005331 phenylglycines Chemical class 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UORVCLMRJXCDCP-UHFFFAOYSA-N propynoic acid Chemical compound OC(=O)C#C UORVCLMRJXCDCP-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000011182 sodium carbonates Nutrition 0.000 description 1
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 229940048086 sodium pyrophosphate Drugs 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000006188 syrup Substances 0.000 description 1
- 235000020357 syrup Nutrition 0.000 description 1
- BCNZYOJHNLTNEZ-UHFFFAOYSA-N tert-butyldimethylsilyl chloride Chemical compound CC(C)(C)[Si](C)(C)Cl BCNZYOJHNLTNEZ-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 235000019818 tetrasodium diphosphate Nutrition 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- ILWRPSCZWQJDMK-UHFFFAOYSA-N triethylazanium;chloride Chemical compound Cl.CCN(CC)CC ILWRPSCZWQJDMK-UHFFFAOYSA-N 0.000 description 1
- PWVJTRQTFFVDEU-UHFFFAOYSA-N triethylsilyl 2-methylprop-2-enoate Chemical compound CC[Si](CC)(CC)OC(=O)C(C)=C PWVJTRQTFFVDEU-UHFFFAOYSA-N 0.000 description 1
- PGQNYIRJCLTTOJ-UHFFFAOYSA-N trimethylsilyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)O[Si](C)(C)C PGQNYIRJCLTTOJ-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- ROVRRJSRRSGUOL-UHFFFAOYSA-N victoria blue bo Chemical compound [Cl-].C12=CC=CC=C2C(NCC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C1C=CC(=[N+](CC)CC)C=C1 ROVRRJSRRSGUOL-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone powder Natural products C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/062—Polyethers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D143/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium, or a metal; Coating compositions based on derivatives of such polymers
- C09D143/04—Homopolymers or copolymers of monomers containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本発明は、アルカリ可溶性樹脂、感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法、及び配線パターンの形成方法に関する。 The present invention relates to an alkali-soluble resin, a photosensitive resin composition, a photosensitive element, a method for forming a resist pattern, and a method for forming a wiring pattern.
プリント配線板の製造分野においては、エッチング処理又はめっき処理等に用いられるレジスト材料として、感光性樹脂組成物、及び、支持フィルム上に感光性樹脂組成物を用いて形成された層(以下、「感光層」ともいう)を備える感光性エレメントが広く用いられている。 In the field of printed wiring board manufacturing, photosensitive resin compositions and photosensitive elements comprising a layer formed on a support film using the photosensitive resin composition (hereinafter also referred to as a "photosensitive layer") are widely used as resist materials for etching, plating, and the like.
プリント配線板は、上記感光性エレメントを用いて、例えば、以下の手順で製造されている。すなわち、まず、感光性エレメントの感光層を銅張積層板等の回路形成用基板上にラミネートする。次に、マスクフィルム等を介して感光層を露光し、光硬化部を形成する。このとき、露光前又は露光後に支持フィルムを剥離する。その後、感光層の光硬化部以外の領域を現像液で除去し、レジストパターンを形成する。次に、レジストパターンをレジストとして、エッチング処理又はめっき処理を施して導体パターンを形成させ、最終的に感光層の光硬化部(レジストパターン)を剥離(除去)する。 A printed wiring board is manufactured using the above-mentioned photosensitive element, for example, by the following procedure. That is, first, the photosensitive layer of the photosensitive element is laminated onto a circuit-forming substrate such as a copper-clad laminate. Next, the photosensitive layer is exposed to light through a mask film or the like to form a photocured portion. At this time, the support film is peeled off before or after exposure. Thereafter, the area of the photosensitive layer other than the photocured portion is removed with a developer to form a resist pattern. Next, the resist pattern is used as a resist to perform an etching process or a plating process to form a conductor pattern, and finally the photocured portion of the photosensitive layer (resist pattern) is peeled off (removed).
環境への影響の観点から、レジストパターンの剥離には、従来、用いられていたアミン系剥離液に替えて、水溶液系剥離液が用いられるようになってきている(例えば、特許文献1参照。)。 In view of the impact on the environment, aqueous-based stripping solutions have begun to be used to strip resist patterns, instead of the amine-based stripping solutions that have been used in the past (see, for example, Patent Document 1).
感光性樹脂組成物には、未露光部の現像性が高く、優れた解像性を有するレジストパターンを形成することが求められるだけでなく、レジストパターンを剥離除去するために、光硬化部の剥離特性に優れることが求められる。これに対して、水溶液系剥離液を用いた場合、アミン系剥離液に比べてレジストパターンの剥離時間が長く、剥離片が小片になり難い傾向にある。剥離特性の向上には、感光性層が含有するバインダ樹脂の親水性を高めることが考えられるが、現像時に感光層の露光部が膨潤し易くなり解像性が低下する。一方、バインダ樹脂の疎水性を高めようとすると、未露光部の現像性が低下するだけでなく、レジストパターンの剥離時間の短縮化及び剥離片の小片化が難しい。 Photosensitive resin compositions are required to not only form resist patterns with high developability in unexposed areas and excellent resolution, but also to have excellent peeling properties in photocured areas in order to peel and remove the resist pattern. In contrast, when an aqueous-based stripper is used, the resist pattern takes longer to peel off than an amine-based stripper, and the peeled pieces tend not to break into small pieces. One way to improve the peeling properties is to increase the hydrophilicity of the binder resin contained in the photosensitive layer, but the exposed parts of the photosensitive layer tend to swell during development, decreasing the resolution. On the other hand, if you try to increase the hydrophobicity of the binder resin, not only will the developability of the unexposed parts decrease, but it will also be difficult to shorten the peeling time of the resist pattern and to break the peeled pieces into small pieces.
本発明は、現像性、解像性及び剥離特性に優れる感光性樹脂組成物に用いられるアルカリ可溶性樹脂、該アルカリ可溶性樹脂を含む感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法、及び配線パターンの形成方法を提供することを目的とする。 The present invention aims to provide an alkali-soluble resin used in a photosensitive resin composition having excellent developability, resolution, and peeling properties, a photosensitive resin composition containing the alkali-soluble resin, a photosensitive element, a method for forming a resist pattern, and a method for forming a wiring pattern.
本発明の一側面は、極性変換基を有する構造単位と、カルボキシ基を有する構造単位とを含み、極性変換基が、弱アルカリ条件下で脱離せず、強アルカリ条件下で脱離する基を有する、アルカリ可溶性樹脂に関する。 One aspect of the present invention relates to an alkali-soluble resin that contains a structural unit having a polarity conversion group and a structural unit having a carboxy group, and the polarity conversion group has a group that does not leave under weak alkaline conditions but leaves under strong alkaline conditions.
本発明は、別の側面において、上記アルカリ可溶性樹脂を含むバインダ樹脂と、光重合性化合物と、光重合開始剤と、を含有する感光性樹脂組成物に関する。 In another aspect, the present invention relates to a photosensitive resin composition containing a binder resin including the above-mentioned alkali-soluble resin, a photopolymerizable compound, and a photopolymerization initiator.
本発明は、別の側面において、支持体と、該支持体上に形成された感光層とを備え、感光層が上記感光性樹脂組成物を含む感光性エレメントに関する。 In another aspect, the present invention relates to a photosensitive element comprising a support and a photosensitive layer formed on the support, the photosensitive layer containing the above-mentioned photosensitive resin composition.
本発明は、別の側面において、基板上に、上記感光性樹脂組成物又は感光性エレメントを用いて感光層を形成する工程と、感光層の少なくとも一部に活性光線を照射して光硬化部を形成する工程と、基板から感光層の光硬化部以外の少なくとも一部を除去する工程と、を備えるレジストパターンの形成方法に関する。 In another aspect, the present invention relates to a method for forming a resist pattern, comprising the steps of forming a photosensitive layer on a substrate using the photosensitive resin composition or photosensitive element, irradiating at least a portion of the photosensitive layer with active light to form a photocured portion, and removing at least a portion of the photosensitive layer other than the photocured portion from the substrate.
本発明は、別の側面において、レジストパターンの形成方法によりレジストパターンが形成された基板を、エッチング処理又はめっき処理して導体パターンを形成する工程を備える、配線パターンの形成方法に関する。 In another aspect, the present invention relates to a method for forming a wiring pattern, which includes a step of forming a conductor pattern by etching or plating a substrate on which a resist pattern has been formed by the resist pattern forming method.
本発明によれば、現像性、解像性及び剥離特性に優れる感光性樹脂組成物に用いられるアルカリ可溶性樹脂、該アルカリ可溶性樹脂を含む感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法、及び配線パターンの形成方法を提供することができる。 The present invention provides an alkali-soluble resin used in a photosensitive resin composition having excellent developability, resolution, and peeling properties, a photosensitive resin composition containing the alkali-soluble resin, a photosensitive element, a method for forming a resist pattern, and a method for forming a wiring pattern.
以下、本発明の実施形態について詳細に説明する。ただし、本発明は以下の実施形態に限定されるものではない。 The following describes in detail the embodiments of the present invention. However, the present invention is not limited to the following embodiments.
本明細書において、「工程」との語は、独立した工程だけではなく、その工程の所期の作用が達成される限り、他の工程と明確に区別できない工程も含む。「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。「層」との語は、平面図として観察したときに、全面に形成されている形状の構造に加え、一部に形成されている形状の構造も包含される。「(メタ)アクリル酸」とは、「アクリル酸」、及び、それに対応する「メタクリル酸」の少なくとも一方を意味する。(メタ)アクリロイル等の他の類似表現についても同様である。 In this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. A numerical range indicated using "~" indicates a range that includes the numerical values written before and after "~" as the minimum and maximum values, respectively. The term "layer" includes a structure that is formed over the entire surface when observed in a plan view, as well as a structure that is formed on a part of the surface. "(Meth)acrylic acid" means at least one of "acrylic acid" and the corresponding "methacrylic acid". The same applies to other similar expressions such as (meth)acryloyl.
本明細書において、感光性樹脂組成物中の各成分の量は、各成分に該当する物質が複数種存在する場合には、特に断らない限り、感光性樹脂組成物中に存在する当該複数種の物質の合計量を意味する。本明細書中に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。また、本明細書における記載事項を任意に組み合わせた態様も本発明に含まれる。本明細書において、「固形分」とは、感光性樹脂組成物に含まれる水及び溶媒等の揮発する物質を除いた不揮発分を指す。すなわち、「固形分」とは、後述する感光性樹脂組成物の乾燥において揮発せずに残る溶媒以外の成分を指し、室温(25℃)で液状、水飴状及びワックス状の成分も含む。 In this specification, the amount of each component in the photosensitive resin composition means the total amount of the multiple substances present in the photosensitive resin composition when there are multiple substances corresponding to each component, unless otherwise specified. In the numerical ranges described in this specification, the upper and lower limits of the numerical ranges may be replaced with values shown in the examples. In addition, the present invention also includes embodiments in which the descriptions in this specification are combined in any manner. In this specification, the "solid content" refers to the non-volatile content excluding volatile substances such as water and solvent contained in the photosensitive resin composition. In other words, the "solid content" refers to components other than the solvent that remain without volatilization during drying of the photosensitive resin composition described later, and also includes liquid, starch syrup, and wax-like components at room temperature (25°C).
[アルカリ可溶性樹脂]
本実施形態に係るアルカリ可溶性樹脂は、極性変換基を有する構造単位と、カルボキシ基を有する構造単位とを含み、極性変換基が、弱アルカリ条件下で脱離せず、強アルカリ条件下で脱離する基を有する。
[Alkali-soluble resin]
The alkali-soluble resin according to this embodiment contains a structural unit having a polarity conversion group and a structural unit having a carboxy group, and the polarity conversion group has a group that does not leave under weak alkaline conditions but leaves under strong alkaline conditions.
アルカリ可溶性樹脂とは、アルカリ性水溶液に可溶な樹脂である。アルカリ性水溶液とは、例えば、テトラメチルアンモニウムヒドロキシド(TMAH)水溶液、金属水酸化物水溶液、金属炭酸塩水溶液、及び有機アミン水溶液が挙げられる。樹脂がアルカリ性水溶液に可溶であることは、例えば、以下のようにして確認することができる。 An alkali-soluble resin is a resin that is soluble in an alkaline aqueous solution. Examples of alkaline aqueous solutions include tetramethylammonium hydroxide (TMAH) aqueous solutions, metal hydroxide aqueous solutions, metal carbonate aqueous solutions, and organic amine aqueous solutions. The solubility of a resin in an alkaline aqueous solution can be confirmed, for example, as follows.
樹脂を任意の溶媒に溶解して得られたワニスを、シリコンウェハ等の基板上にスピン塗布して形成することにより厚さ5μm程度の塗膜とする。これをTMAH水溶液、金属水酸化物水溶液、金属炭酸塩水溶液、又は有機アミン水溶液のいずれかに20~25℃において、浸漬する。この結果、塗膜が均一に溶解し得るとき、その樹脂はアルカリ性水溶液に可溶であると見なすことができる。 A varnish obtained by dissolving a resin in a solvent is spin-coated onto a substrate such as a silicon wafer to form a coating film of about 5 μm in thickness. This is then immersed in either an aqueous TMAH solution, an aqueous metal hydroxide solution, an aqueous metal carbonate solution, or an aqueous organic amine solution at 20-25°C. If the coating film can be uniformly dissolved as a result of this, the resin can be considered to be soluble in an alkaline aqueous solution.
本実施形態において、「極性変換基」とは、疎水性から親水性へ極性が変換する官能基を意味する。本実施形態に係る極性変換基は、弱アルカリ条件下では安定で疎水性を示しているものの、強アルカリ条件下では分解して水酸基、カルボキシ基等の親水性の基を生じることができる。弱アルカリ条件下としては、例えば、後述するレジストパターンの形成における感光層のアルカリ性水溶液による現像が挙げられる。強アルカリ条件下としては、例えば、形成されたレジストパターンのアルカリ性水溶液による剥離が挙げられる。すなわち、本実施形態に係る極性変換基は、感光層の現像に用いられる弱アルカリ性水溶液に対して安定な疎水性を示す基であり、レジストパターンの剥離に用いられる強アルカリ性水溶液により分解して親水性の基へ変化することができる。 In this embodiment, the "polarity conversion group" refers to a functional group whose polarity changes from hydrophobic to hydrophilic. The polarity conversion group according to this embodiment is stable and hydrophobic under weak alkaline conditions, but can decompose under strong alkaline conditions to generate hydrophilic groups such as hydroxyl groups and carboxyl groups. An example of a weak alkaline condition is development of a photosensitive layer with an alkaline aqueous solution in the formation of a resist pattern, which will be described later. An example of a strong alkaline condition is stripping of a formed resist pattern with an alkaline aqueous solution. That is, the polarity conversion group according to this embodiment is a group that is stable and hydrophobic in the weak alkaline aqueous solution used in the development of the photosensitive layer, and can be decomposed by the strong alkaline aqueous solution used in the stripping of the resist pattern to change into a hydrophilic group.
本実施形態に係るアルカリ可溶性樹脂は、感光性樹脂組成物のバインダ樹脂として用いることができ、感光性樹脂組成物から形成される感光層の現像性、解像性及び剥離特性を向上することができる。また、本実施形態に係るアルカリ可溶性樹脂を厚膜用途の感光性樹脂組成物に用いることで、解像度を保ったまま剥離特性を向上することができる。 The alkali-soluble resin according to this embodiment can be used as a binder resin for a photosensitive resin composition, and can improve the developability, resolution, and peeling properties of a photosensitive layer formed from the photosensitive resin composition. In addition, by using the alkali-soluble resin according to this embodiment in a photosensitive resin composition for thick film applications, it is possible to improve the peeling properties while maintaining the resolution.
アルカリ可溶性樹脂は、剥離特性の見地から、極性変換基を有する構造単位を含む。剥離特性をより向上する観点から、極性変換基は、下記式(1)で表される基であってもよい。 From the viewpoint of release properties, the alkali-soluble resin contains a structural unit having a polarity conversion group. From the viewpoint of further improving the release properties, the polarity conversion group may be a group represented by the following formula (1).
式(1)中、R2は、トリメチルシリル基、トリエチルシリル基、tert-ブチルジメチルシリル基又はトリチル基を示す。式(1)で表される基は、強アルカリ条件下でR2が脱離して、「-OH」へ変換することができる。 In formula (1), R2 represents a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, or a trityl group. The group represented by formula (1) can be converted to "-OH" by elimination of R2 under strong alkaline conditions.
解像性及び剥離特性のバランスに優れる観点から、上記極性変換基を有する構造単位は、下記式(2)で表される化合物に基づく構造単位であってもよい。 From the viewpoint of achieving an excellent balance between resolution and peeling properties, the structural unit having the polarity conversion group may be a structural unit based on a compound represented by the following formula (2):
式(2)中、R1は水素原子又はメチル基を示し、L1は炭素数1~6のアルキレン基を示し、R2は、トリメチルシリル基、トリエチルシリル基、tert-ブチルジメチルシリル基又はトリチル基を示す。アルカリ溶解性を向上する観点から、L1は、炭素数1~4のアルキレン基であることが好ましく、炭素数1~3のアルキレン基であることがより好ましく、炭素数2又は3のアルキレン基であることが更に好ましい。 In formula (2), R 1 represents a hydrogen atom or a methyl group, L 1 represents an alkylene group having 1 to 6 carbon atoms, and R 2 represents a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, or a trityl group. From the viewpoint of improving alkali solubility, L 1 is preferably an alkylene group having 1 to 4 carbon atoms, more preferably an alkylene group having 1 to 3 carbon atoms, and even more preferably an alkylene group having 2 or 3 carbon atoms.
式(2)で表される化合物としては、例えば、(メタ)アクリル酸2-(トリメチルシリルオキシ)エチル、(メタ)アクリル酸トリメチルシリル、及び(メタ)アクリル酸トリチルが挙げられる。 Examples of compounds represented by formula (2) include 2-(trimethylsilyloxy)ethyl (meth)acrylate, trimethylsilyl (meth)acrylate, and trityl (meth)acrylate.
本実施形態に係るアルカリ可溶性樹脂は、例えば、極性変換基を有するモノマと、カルボキシ基を有するモノマとをラジカル重合させることにより製造することができる。 The alkali-soluble resin according to this embodiment can be produced, for example, by radical polymerization of a monomer having a polar conversion group and a monomer having a carboxy group.
剥離特性をより向上する観点から、極性変換基を有するモノマの含有量は、アルカリ可溶性樹脂を構成するモノマの全量を基準として、1質量%以上、2質量%以上、3質量%以上、又は4質量%以上であってよい。現像性をより向上する観点から、極性変換基を有するモノマの含有量は35質量%以下、30質量%以下、又は25質量%以下であってよい。 From the viewpoint of further improving the release properties, the content of the monomer having a polar conversion group may be 1% by mass or more, 2% by mass or more, 3% by mass or more, or 4% by mass or more based on the total amount of the monomers constituting the alkali-soluble resin. From the viewpoint of further improving the developability, the content of the monomer having a polar conversion group may be 35% by mass or less, 30% by mass or less, or 25% by mass or less.
アルカリ可溶性樹脂は、アルカリ現像性の見地から、カルボキシ基を有する構造単位を含む。カルボキシ基を有するモノマとしては、例えば、(メタ)アクリル酸、α-ブロモアクリル酸、α-クロルアクリル酸、β-フリル(メタ)アクリル酸、β-スチリル(メタ)アクリル酸、マレイン酸、マレイン酸無水物、マレイン酸モノメチル、マレイン酸モノエチル、マレイン酸モノイソプロピル等のマレイン酸モノエステル、フマール酸、ケイ皮酸、α-シアノケイ皮酸、イタコン酸、クロトン酸、及びプロピオール酸が挙げられる。アルカリ現像性をより向上する点から、カルボキシ基を有するモノマは、(メタ)アクリル酸であってもよく、メタクリル酸であってもよい。 From the viewpoint of alkaline developability, the alkali-soluble resin contains a structural unit having a carboxy group. Examples of monomers having a carboxy group include (meth)acrylic acid, α-bromoacrylic acid, α-chloroacrylic acid, β-furyl(meth)acrylic acid, β-styryl(meth)acrylic acid, maleic acid, maleic anhydride, maleic acid monoesters such as monomethyl maleate, monoethyl maleate, and monoisopropyl maleate, fumaric acid, cinnamic acid, α-cyanocinnamic acid, itaconic acid, crotonic acid, and propiolic acid. From the viewpoint of further improving alkaline developability, the monomer having a carboxy group may be (meth)acrylic acid or methacrylic acid.
アルカリ現像性とアルカリ耐性とをバランスよく向上させる点から、カルボキシ基を有するモノマに由来する構造単位の含有量は、アルカリ可溶性樹脂を構成するモノマの全体量を基準として、10~45質量%、15~40質量%、又は20~35質量%であってもよい。この含有量が10質量%以上ではアルカリ現像性が向上する傾向があり、45質量%以下ではアルカリ耐性に優れる傾向がある。 In order to improve the alkaline developability and alkaline resistance in a well-balanced manner, the content of structural units derived from monomers having a carboxy group may be 10 to 45 mass %, 15 to 40 mass %, or 20 to 35 mass % based on the total amount of monomers constituting the alkali-soluble resin. If this content is 10 mass % or more, the alkaline developability tends to be improved, and if it is 45 mass % or less, the alkaline resistance tends to be excellent.
アルカリ可溶性樹脂は、密着性及び剥離特性の観点から、スチレン又はスチレン誘導体に基づく構造単位を有してもよい。スチレン誘導体は、ビニルトルエン、α-メチルスチレン等のスチレンのα位又は芳香環における水素原子が置換された重合可能な化合物である。アルカリ可溶性樹脂中におけるスチレン又はスチレン誘導体に基づく構造単位の含有量は、10~60質量%、15~55質量%、又は25~50質量%であってもよい。この含有量が10質量%以上では、密着性が向上する傾向があり、60質量%以下では、現像時に剥離片が大きくなることを抑制でき、剥離に要する時間の長時間化が抑えられる傾向がある。 From the viewpoint of adhesion and peeling properties, the alkali-soluble resin may have a structural unit based on styrene or a styrene derivative. Styrene derivatives are polymerizable compounds in which hydrogen atoms at the α-position or aromatic ring of styrene, such as vinyltoluene and α-methylstyrene, are substituted. The content of structural units based on styrene or a styrene derivative in the alkali-soluble resin may be 10 to 60 mass%, 15 to 55 mass%, or 25 to 50 mass%. If this content is 10 mass% or more, adhesion tends to improve, and if it is 60 mass% or less, it is possible to prevent the peeled pieces from becoming large during development, and the time required for peeling tends to be suppressed from increasing.
アルカリ可溶性樹脂は、解像性及びアスペクト比の見地から、(メタ)アクリル酸ベンジルエステルに基づく構造単位を有してもよい。アルカリ可溶性樹脂中における(メタ)アクリル酸ベンジルエステルに由来する構造単位の含有量は、解像性を向上させる見地から、5~50質量%、15~45質量%、又は10~40質量%であってもよい。 From the viewpoint of resolution and aspect ratio, the alkali-soluble resin may have structural units based on benzyl (meth)acrylic acid ester. From the viewpoint of improving resolution, the content of structural units derived from benzyl (meth)acrylic acid ester in the alkali-soluble resin may be 5 to 50% by mass, 15 to 45% by mass, or 10 to 40% by mass.
アルカリ可溶性樹脂は、可塑性を向上する見地から、(メタ)アクリル酸アルキルエステルに基づく構造単位を有してもよい。(メタ)アクリル酸アルキルエステルとしては、例えば、(メタ)アクリル酸メチルエステル、(メタ)アクリル酸エチルエステル、(メタ)アクリル酸プロピルエステル、(メタ)アクリル酸ブチルエステル、(メタ)アクリル酸ペンチルエステル、(メタ)アクリル酸ヘキシルエステル、(メタ)アクリル酸ヘプチルエステル、(メタ)アクリル酸オクチルエステル、(メタ)アクリル酸2-エチルヘキシルエステル、(メタ)アクリル酸ノニルエステル、(メタ)アクリル酸デシルエステル、(メタ)アクリル酸ウンデシルエステル、及び(メタ)アクリル酸ドデシルエステルが挙げられる。 From the viewpoint of improving plasticity, the alkali-soluble resin may have a structural unit based on an alkyl (meth)acrylate ester. Examples of alkyl (meth)acrylate esters include methyl (meth)acrylate ester, ethyl (meth)acrylate ester, propyl (meth)acrylate ester, butyl (meth)acrylate ester, pentyl (meth)acrylate ester, hexyl (meth)acrylate ester, heptyl (meth)acrylate ester, octyl (meth)acrylate ester, 2-ethylhexyl (meth)acrylate ester, nonyl (meth)acrylate ester, decyl (meth)acrylate ester, undecyl (meth)acrylate ester, and dodecyl (meth)acrylate ester.
解像性を向上する観点から、アルカリ可溶性樹脂の重量平均分子量(Mw)は、1000以上、2000以上、3000以上、又は5000以上であってよい。好適に現像できる観点から、アルカリ可溶性樹脂のMwは、30000以下、28000以下、26000以下、又は24000以下であってよい。Mwは、例えば、ゲルパーミエーションクロマトグラフィー(GPC)により標準ポリスチレンの検量線を用いて測定することができる。 From the viewpoint of improving resolution, the weight average molecular weight (Mw) of the alkali-soluble resin may be 1000 or more, 2000 or more, 3000 or more, or 5000 or more. From the viewpoint of suitable development, the Mw of the alkali-soluble resin may be 30000 or less, 28000 or less, 26000 or less, or 24000 or less. Mw can be measured, for example, by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene.
アルカリ可溶性樹脂の親水性度は、アルカリ可溶性樹脂を構成するモノマの親水性度とモノマの共重合比とから、下記式により算出することができる。モノマの親水性度は、モノマにイオン交換水を加えて23℃で12時間静置した後、カールフィッシャー法で測定されるモノマに含まれる水分量(質量%)である。
アルカリ可溶性樹脂の親水性度=モノマの共重合比(質量%)×モノマの親水性度
The hydrophilicity of the alkali-soluble resin can be calculated from the hydrophilicity of the monomers constituting the alkali-soluble resin and the copolymerization ratio of the monomers by the following formula: The hydrophilicity of the monomer is the amount of water (mass%) contained in the monomer, which is measured by the Karl Fischer method after adding ion-exchanged water to the monomer and leaving it at 23° C. for 12 hours.
Hydrophilicity of alkali-soluble resin = copolymerization ratio of monomer (mass%) x hydrophilicity of monomer
極性変換基が分解する前のアルカリ可溶性樹脂の親水性度は、露光部の現像時のアルカリ耐性の見地から、80~120、82~115、又は84~110であってよい。極性変換基が分解した後のアルカリ可溶性樹脂の親水性度は、剥離特性の見地から、95~120、98~115、又は100~110であってよい。現像性、解像性及び剥離特性のバランスをより向上する観点から、極性変換後の親水性度の増加率は、3~45%、5~40%、又は10~35%であってよい。 The hydrophilicity of the alkali-soluble resin before the polarity conversion group is decomposed may be 80 to 120, 82 to 115, or 84 to 110 from the viewpoint of alkali resistance during development of the exposed area. The hydrophilicity of the alkali-soluble resin after the polarity conversion group is decomposed may be 95 to 120, 98 to 115, or 100 to 110 from the viewpoint of peeling properties. From the viewpoint of further improving the balance of developability, resolution, and peeling properties, the increase rate of hydrophilicity after polarity conversion may be 3 to 45%, 5 to 40%, or 10 to 35%.
[感光性樹脂組成物]
本実施形態に係る感光性樹脂組成物は、(A)バインダ樹脂(以下、「(A)成分」という場合がある。)、(B)光重合性化合物(以下、「(B)成分」という場合がある。)と、(C)光重合開始剤(以下、「(C)成分」という場合がある。)と、を含有する。以下、感光性樹脂組成物が含有し得る各成分について詳述する。
[Photosensitive resin composition]
The photosensitive resin composition according to the present embodiment contains (A) a binder resin (hereinafter, sometimes referred to as "component (A)"), (B) a photopolymerizable compound (hereinafter, sometimes referred to as "component (B)"), and (C) a photopolymerization initiator (hereinafter, sometimes referred to as "component (C)"). Each component that may be contained in the photosensitive resin composition will be described in detail below.
<(A)バインダ樹脂>
(A)成分であるバインダ樹脂は、本実施形態に係るアルカリ可溶性樹脂(以下、「(A1)成分という場合がある。」)を含む。(A1)成分を含有することで、露光部の現像時のアルカリ耐性が向上し、優れた解像性を有するレジストパターンを形成することできる。該レジストパターンは、強アルカリ性水溶液によって、剥離することができる。(A1)成分は、1種の樹脂のみで構成されてもよく、2種以上の樹脂を含んで構成されてもよい。
<(A) Binder Resin>
The binder resin, which is the component (A), contains an alkali-soluble resin according to this embodiment (hereinafter, may be referred to as "component (A1)"). By containing the component (A1), the alkali resistance during development of the exposed area is improved, and a resist pattern with excellent resolution can be formed. The resist pattern can be peeled off with a strong alkaline aqueous solution. The component (A1) may be composed of only one type of resin, or may contain two or more types of resins.
(A)成分は、(A1)成分以外のアルカリ可溶性樹脂を更に含んでよい。該アルカリ可溶性樹脂は、フェノール性水酸基を有する樹脂であってもよい。フェノール性水酸基を有する樹脂としては、例えば、ポリヒドロキシスチレン、ヒドロキシスチレンをモノマ単位として含む共重合体等のヒドロキシスチレン系樹脂、フェノール樹脂、ポリ(ヒドロキシアミド)等のポリベンゾオキサゾール前駆体、ポリ(ヒドロキシフェニレン)エーテル、及びポリナフトールが挙げられる。 Component (A) may further contain an alkali-soluble resin other than component (A1). The alkali-soluble resin may be a resin having a phenolic hydroxyl group. Examples of resins having a phenolic hydroxyl group include hydroxystyrene-based resins such as polyhydroxystyrene and copolymers containing hydroxystyrene as a monomer unit, phenolic resins, polybenzoxazole precursors such as poly(hydroxyamide), poly(hydroxyphenylene) ether, and polynaphthol.
(A)成分の含有量は、(A)成分及び(B)成分の総量100質量部に対して、30~90質量部、40~85質量部、又は50~80質量部であってもよい。(A)成分の含有量がこの範囲内であると、感光層の光硬化部の強度がより良好となる。 The content of component (A) may be 30 to 90 parts by weight, 40 to 85 parts by weight, or 50 to 80 parts by weight, based on 100 parts by weight of the total amount of components (A) and (B). When the content of component (A) is within this range, the strength of the photocured portion of the photosensitive layer is improved.
<(B)光重合性化合物>
(B)成分は、光重合性を示す官能基として、例えば、ビニル基、アリル基、プロパルギル基、ブテニル基、エチニル基、フェニルエチニル基、マレイミド基、ナジイミド基、(メタ)アクリロイル基等のエチレン性不飽和結合を有する官能基を有する化合物である。(B)成分は、エチレン性不飽和基を1つ以上有する化合物であれば特に限定されない。光重合性を示す官能基としては、(メタ)アクリロイル基が好ましい。(B)成分は、1種を単独で又は2種以上を組み合わせて用いてもよい。
<(B) Photopolymerizable Compound>
The (B) component is a compound having a functional group having an ethylenically unsaturated bond, such as a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadiimide group, or a (meth)acryloyl group, as a functional group exhibiting photopolymerizability. The (B) component is not particularly limited as long as it is a compound having one or more ethylenically unsaturated groups. As the functional group exhibiting photopolymerizability, a (meth)acryloyl group is preferred. The (B) component may be used alone or in combination of two or more.
エチレン性不飽和基を1つ有する光重合性化合物としては、例えば、(メタ)アクリル酸、(メタ)アクリル酸アルキルエステル、及びフタル酸系(メタ)アクリレート化合物が挙げられる。 Examples of photopolymerizable compounds having one ethylenically unsaturated group include (meth)acrylic acid, (meth)acrylic acid alkyl esters, and phthalic acid-based (meth)acrylate compounds.
(メタ)アクリル酸アルキルエステルとしては、例えば、(メタ)アクリル酸メチルエステル、(メタ)アクリル酸エチルエステル、(メタ)アクリル酸ブチルエステル、(メタ)アクリル酸2-エチルヘキシルエステル、及び(メタ)アクリル酸ヒドロキシルエチルエステルが挙げられる。 Examples of (meth)acrylic acid alkyl esters include (meth)acrylic acid methyl ester, (meth)acrylic acid ethyl ester, (meth)acrylic acid butyl ester, (meth)acrylic acid 2-ethylhexyl ester, and (meth)acrylic acid hydroxylethyl ester.
(B)成分は、解像度、密着性及びレジスト形状を好適に向上させる観点から、フタル酸系化合物を含んでもよい。フタル酸系化合物としては、例えば、γ-クロロ-β-ヒドロキシプロピル-β’-(メタ)アクリロイルオキシエチル-o-フタレート(別名:3-クロロ-2-ヒドロキシプロピル-2-(メタ)アクリロイルオキシエチルフタレート)、β-ヒドロキシエチル-β’-(メタ)アクリロイルオキシエチル-o-フタレート、及びβ-ヒドロキシプロピル-β’-(メタ)アクリロイルオキシエチル-o-フタレートが挙げられる。 Component (B) may contain a phthalic acid compound from the viewpoint of suitably improving resolution, adhesion, and resist shape. Examples of phthalic acid compounds include γ-chloro-β-hydroxypropyl-β'-(meth)acryloyloxyethyl-o-phthalate (also known as 3-chloro-2-hydroxypropyl-2-(meth)acryloyloxyethyl phthalate), β-hydroxyethyl-β'-(meth)acryloyloxyethyl-o-phthalate, and β-hydroxypropyl-β'-(meth)acryloyloxyethyl-o-phthalate.
エチレン性不飽和基を2つ有する光重合性化合物としては、例えば、ポリエチレングリコールジ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ポリプロピレングリコールジ(メタ)アクリレート、2,2-ビス(4-(メタ)アクリロキシポリエトキシポリプロポキシフェニル)プロパン、ビスフェノールAジグリシジルエーテルジ(メタ)アクリレート、及びアルキレンオキサイド変性ビスフェノールAジ(メタ)アクリレートが挙げられる。 Examples of photopolymerizable compounds having two ethylenically unsaturated groups include polyethylene glycol di(meth)acrylate, trimethylolpropane di(meth)acrylate, polypropylene glycol di(meth)acrylate, 2,2-bis(4-(meth)acryloxypolyethoxypolypropoxyphenyl)propane, bisphenol A diglycidyl ether di(meth)acrylate, and alkylene oxide-modified bisphenol A di(meth)acrylate.
(B)成分は、アルカリ現像性及び解像度を向上させる観点から、アルキレンオキサイド変性ビスフェノールAジ(メタ)アクリレートを含んでもよい。アルキレンオキサイド変性ビスフェノールAジ(メタ)アクリレートとしては、例えば、2,2-ビス(4-((メタ)アクリロキシポリエトキシ)フェニル)プロパン(2,2-ビス(4-((メタ)アクリロキシペンタエトキシ)フェニル)プロパン等)、2,2-ビス(4-((メタ)アクリロキシポリプロポキシ)フェニル)プロパン、2,2-ビス(4-((メタ)アクリロキシポリブトキシ)フェニル)プロパン、及び2,2-ビス(4-((メタ)アクリロキシポリエトキシポリプロポキシ)フェニル)プロパンが挙げられる。 From the viewpoint of improving alkaline developability and resolution, component (B) may contain an alkylene oxide-modified bisphenol A di(meth)acrylate. Examples of alkylene oxide-modified bisphenol A di(meth)acrylate include 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane (2,2-bis(4-((meth)acryloxypentaethoxy)phenyl)propane, etc.), 2,2-bis(4-((meth)acryloxypolypropoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolybutoxy)phenyl)propane, and 2,2-bis(4-((meth)acryloxypolyethoxypolypropoxy)phenyl)propane.
エチレン性不飽和基を3つ以上有する光重合性化合物としては、例えば、トリメチロールプロパントリ(メタ)アクリレート等のトリメチロールプロパン由来の骨格を有する(メタ)アクリレート;テトラメチロールメタントリ(メタ)アクリレート、テトラメチロールメタンテトラ(メタ)アクリレート等のテトラメチロールメタン由来の骨格を有する(メタ)アクリレート;ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート等のペンタエリスリトール由来の骨格を有する(メタ)アクリレート;ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート等のジペンタエリスリトール由来の骨格を有する(メタ)アクリレート;ジトリメチロールプロパンテトラ(メタ)アクリレート等のジトリメチロールプロパン由来の骨格を有する(メタ)アクリレート;ジグリセリン由来の骨格を有する(メタ)アクリレートが挙げられる。これらの中でも、硬化(露光)後の耐薬品性を高めて、露光部と未露光部との耐現像液性の差を大きくするという観点から、ジペンタエリスリトール由来の骨格を有する(メタ)アクリレート化合物が好ましく、ジペンタエリスリトールペンタ(メタ)アクリレートがより好ましい。 Examples of photopolymerizable compounds having three or more ethylenically unsaturated groups include (meth)acrylates having a skeleton derived from trimethylolpropane, such as trimethylolpropane tri(meth)acrylate; (meth)acrylates having a skeleton derived from tetramethylolmethane, such as tetramethylolmethane tri(meth)acrylate and tetramethylolmethane tetra(meth)acrylate; (meth)acrylates having a skeleton derived from pentaerythritol, such as pentaerythritol tri(meth)acrylate and pentaerythritol tetra(meth)acrylate; (meth)acrylates having a skeleton derived from dipentaerythritol, such as dipentaerythritol penta(meth)acrylate and dipentaerythritol hexa(meth)acrylate; (meth)acrylates having a skeleton derived from ditrimethylolpropane, such as ditrimethylolpropane tetra(meth)acrylate; and (meth)acrylates having a skeleton derived from diglycerin. Among these, from the viewpoint of increasing the chemical resistance after curing (exposure) and increasing the difference in developer resistance between exposed and unexposed areas, (meth)acrylate compounds having a skeleton derived from dipentaerythritol are preferred, and dipentaerythritol penta(meth)acrylate is more preferred.
感光性樹脂組成物の未露光部のアルカリ現像性を向上すると共に、露光部の接着強度を向上する観点から、(B)成分は、エチレン性不飽和基と酸変性基とを有する光重合性化合物を含んでもよい。変性する酸性基としては、例えば、カルボキシ基、スルホ基、フェノール性水酸基等が挙げられ、これらの中でもカルボキシ基が好ましい。 From the viewpoint of improving the alkaline developability of the unexposed parts of the photosensitive resin composition and improving the adhesive strength of the exposed parts, component (B) may contain a photopolymerizable compound having an ethylenically unsaturated group and an acid-modified group. Examples of the acidic group to be modified include a carboxy group, a sulfo group, and a phenolic hydroxyl group, and among these, a carboxy group is preferred.
エチレン性不飽和基と酸性基とを有する光重合性化合物としては、例えば、スチレン-マレイン酸系樹脂及び酸変性ビニル基含有エポキシ誘導体が挙げられる。 Examples of photopolymerizable compounds having an ethylenically unsaturated group and an acidic group include styrene-maleic acid resins and acid-modified vinyl group-containing epoxy derivatives.
スチレン-マレイン酸系樹脂は、スチレン-無水マレイン酸共重合体のヒドロキシエチル(メタ)アクリレート変性物である。酸変性ビニル基含有エポキシ誘導体は、エポキシ樹脂をビニル基含有有機酸で変性した化合物に、飽和基又は不飽和基含有多塩基酸無水物を反応させてなる化合物である。 Styrene-maleic acid resins are hydroxyethyl (meth)acrylate modified styrene-maleic anhydride copolymers. Acid-modified vinyl group-containing epoxy derivatives are compounds obtained by reacting a compound in which an epoxy resin is modified with a vinyl group-containing organic acid with a saturated or unsaturated group-containing polybasic acid anhydride.
エポキシ樹脂としては、エポキシ基を2つ以上有する化合物であれば、特に限定されない。エポキシ樹脂としては、例えば、グリシジルエーテルタイプのエポキシ樹脂、グリシジルアミンタイプのエポキシ樹脂、及びグリシジルエステルタイプのエポキシ樹脂が挙げられる。これらの中でも、半導体チップ実装時の信頼性の観点から、ビスフェノールノボラック型エポキシ樹脂が好ましく、ビスフェノールFノボラック型エポキシ樹脂がより好ましい。 The epoxy resin is not particularly limited as long as it is a compound having two or more epoxy groups. Examples of the epoxy resin include glycidyl ether type epoxy resins, glycidyl amine type epoxy resins, and glycidyl ester type epoxy resins. Among these, from the viewpoint of reliability during semiconductor chip mounting, bisphenol novolac type epoxy resins are preferred, and bisphenol F novolac type epoxy resins are more preferred.
ビニル基含有有機酸としては、特に制限されず、ビニル基含有モノカルボン酸であってもよい。ビニル基含有モノカルボン酸としては、例えば、アクリル酸、アクリル酸の二量体、メタクリル酸、β-フルフリルアクリル酸、β-スチリルアクリル酸、桂皮酸、クロトン酸、α-シアノ桂皮酸等のアクリル酸誘導体;水酸基含有アクリレートと二塩基酸無水物との反応生成物である半エステル化合物;ビニル基含有モノグリシジルエーテル又はビニル基含有モノグリシジルエステルと二塩基酸無水物との反応生成物である半エステル化合物;などが挙げられる。 The vinyl group-containing organic acid is not particularly limited, and may be a vinyl group-containing monocarboxylic acid. Examples of vinyl group-containing monocarboxylic acids include acrylic acid, acrylic acid dimers, methacrylic acid, β-furfurylacrylic acid, β-styrylacrylic acid, cinnamic acid, crotonic acid, α-cyanocinnamic acid, and other acrylic acid derivatives; half-ester compounds which are reaction products of hydroxyl group-containing acrylates and dibasic acid anhydrides; and half-ester compounds which are reaction products of vinyl group-containing monoglycidyl ethers or vinyl group-containing monoglycidyl esters and dibasic acid anhydrides.
エチレン性不飽和結合は、光重合が可能であれば特に限定されない。エチレン性不飽和結合としては、例えば、(メタ)アクリロイル基等のα,β-不飽和カルボニル基が挙げられる。α,β-不飽和カルボニル基を有する光重合性化合物としては、例えば、多価アルコールのα,β-不飽和カルボン酸エステル、ビスフェノール型(メタ)アクリレート、グリシジル基含有化合物のα,β-不飽和カルボン酸付加物、ウレタン結合を有する(メタ)アクリレート、ノニルフェノキシポリエチレンオキシアクリレート、及び(メタ)アクリル酸アルキルエステルが挙げられる。 The ethylenically unsaturated bond is not particularly limited as long as it is photopolymerizable. Examples of the ethylenically unsaturated bond include α,β-unsaturated carbonyl groups such as (meth)acryloyl groups. Examples of photopolymerizable compounds having α,β-unsaturated carbonyl groups include α,β-unsaturated carboxylic acid esters of polyhydric alcohols, bisphenol-type (meth)acrylates, α,β-unsaturated carboxylic acid adducts of glycidyl group-containing compounds, (meth)acrylates having urethane bonds, nonylphenoxy polyethyleneoxy acrylates, and (meth)acrylic acid alkyl esters.
多価アルコールのα,β-不飽和カルボン酸エステルとしては、例えば、エチレン基の数が2~14であるポリエチレングリコールジ(メタ)アクリレート、プロピレン基の数が2~14であるポリプロピレングリコールジ(メタ)アクリレート、エチレン基の数が2~14でありプロピレン基の数が2~14であるポリエチレン・ポリプロピレングリコールジ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、EO変性トリメチロールプロパントリ(メタ)アクリレート、PO変性トリメチロールプロパントリ(メタ)アクリレート、EO,PO変性トリメチロールプロパントリ(メタ)アクリレート、テトラメチロールメタントリ(メタ)アクリレート、テトラメチロールメタンテトラ(メタ)アクリレート、及びジペンタエリスリトール又はペンタエリスリトール由来の骨格を有する(メタ)アクリレート化合物が挙げられる。「EO変性」とはエチレンオキサイド(EO)基のブロック構造を有するものであることを意味し、「PO変性」とはプロピレンオキサイド(PO)基のブロック構造を有するものであることを意味する。 Examples of α,β-unsaturated carboxylic acid esters of polyhydric alcohols include polyethylene glycol di(meth)acrylate having 2 to 14 ethylene groups, polypropylene glycol di(meth)acrylate having 2 to 14 propylene groups, polyethylene-polypropylene glycol di(meth)acrylate having 2 to 14 ethylene groups and 2 to 14 propylene groups, trimethylolpropane di(meth)acrylate, trimethylolpropane tri(meth)acrylate, EO-modified trimethylolpropane tri(meth)acrylate, PO-modified trimethylolpropane tri(meth)acrylate, EO,PO-modified trimethylolpropane tri(meth)acrylate, tetramethylolmethane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, and (meth)acrylate compounds having a skeleton derived from dipentaerythritol or pentaerythritol. "EO modified" means that it has a block structure of ethylene oxide (EO) groups, and "PO modified" means that it has a block structure of propylene oxide (PO) groups.
(B)成分は、レジストパターンの柔軟性を向上する観点から、ポリアルキレングリコールジ(メタ)アクリレートを含んでもよい。ポリアルキレングリコールジ(メタ)アクリレートは、EO基及びPO基の少なくとも一方を有してもよく、EO基及びPO基の双方を有してもよい。EO基及びPO基の双方を有するポリアルキレングリコールジ(メタ)アクリレートにおいて、EO基及びPO基は、それぞれ連続してブロック的に存在しても、ランダムに存在してもよい。また、PO基は、オキシ-n-プロピレン基又はオキシイソプロピレン基のいずれであってもよい。なお、(ポリ)オキシイソプロピレン基において、プロピレン基の2級炭素が酸素原子に結合していてもよく、1級炭素が酸素原子に結合していてもよい。 From the viewpoint of improving the flexibility of the resist pattern, the (B) component may contain a polyalkylene glycol di(meth)acrylate. The polyalkylene glycol di(meth)acrylate may have at least one of an EO group and a PO group, or may have both an EO group and a PO group. In a polyalkylene glycol di(meth)acrylate having both an EO group and a PO group, the EO group and the PO group may each be present in a continuous block form or may be present randomly. The PO group may be either an oxy-n-propylene group or an oxyisopropylene group. In the (poly)oxyisopropylene group, the secondary carbon of the propylene group may be bonded to an oxygen atom, and the primary carbon may be bonded to an oxygen atom.
ポリアルキレングリコールジ(メタ)アクリレートの市販品としては、例えば、FA-023M(日立化成株式会社製)、FA-024M(日立化成株式会社製)、及びNKエステルHEMA-9P(新中村化学工業株式会社製)が挙げられる。 Commercially available polyalkylene glycol di(meth)acrylates include, for example, FA-023M (manufactured by Hitachi Chemical Co., Ltd.), FA-024M (manufactured by Hitachi Chemical Co., Ltd.), and NK Ester HEMA-9P (manufactured by Shin-Nakamura Chemical Co., Ltd.).
(B)成分は、レジストパターンの柔軟性を向上する観点から、ウレタン結合を有する(メタ)アクリレートを含んでもよい。ウレタン結合を有する(メタ)アクリレートとしては、例えば、β位にOH基を有する(メタ)アクリルモノマーとジイソシアネート(イソホロンジイソシアネート、2,6-トルエンジイソシアネート、2,4-トルエンジイソシアネート、1,6-ヘキサメチレンジイソシアネート等)との付加反応物、トリス((メタ)アクリロキシテトラエチレングリコールイソシアネート)ヘキサメチレンイソシアヌレート、EO変性ウレタンジ(メタ)アクリレート、及びEO,PO変性ウレタンジ(メタ)アクリレートが挙げられる。 From the viewpoint of improving the flexibility of the resist pattern, component (B) may contain a (meth)acrylate having a urethane bond. Examples of (meth)acrylates having a urethane bond include an addition reaction product of a (meth)acrylic monomer having an OH group at the β-position with a diisocyanate (isophorone diisocyanate, 2,6-toluene diisocyanate, 2,4-toluene diisocyanate, 1,6-hexamethylene diisocyanate, etc.), tris((meth)acryloxytetraethylene glycol isocyanate)hexamethylene isocyanurate, EO-modified urethane di(meth)acrylate, and EO,PO-modified urethane di(meth)acrylate.
EO変性ウレタンジ(メタ)アクリレートの市販品としては、例えば、「UA-11」及び「UA-21EB」(新中村化学工業株式会社製)が挙げられる。EO,PO変性ウレタンジ(メタ)アクリレートの市販品としては、例えば、「UA-13」(新中村化学工業株式会社製)が挙げられる。 Commercially available EO-modified urethane di(meth)acrylates include, for example, "UA-11" and "UA-21EB" (manufactured by Shin-Nakamura Chemical Co., Ltd.). Commercially available EO, PO-modified urethane di(meth)acrylates include, for example, "UA-13" (manufactured by Shin-Nakamura Chemical Co., Ltd.).
(B)成分は、厚膜のレジストパターンが形成し易く、解像度及び密着性をバランスよく向上させる観点から、ジペンタエリスリトール又はペンタエリスリトール由来の骨格を有する(メタ)アクリレート化合物を含んでもよい。ジペンタエリスリトール又はペンタエリスリトール由来の骨格を有する(メタ)アクリレート化合物は、(メタ)アクリロイル基を4つ以上有することが好ましく、ジペンタエリスリトールペンタ(メタ)アクリレート、又はジペンタエリスリトールヘキサ(メタ)アクリレートであってもよい。 From the viewpoint of facilitating the formation of a thick resist pattern and improving resolution and adhesion in a well-balanced manner, component (B) may contain a (meth)acrylate compound having a skeleton derived from dipentaerythritol or pentaerythritol. The (meth)acrylate compound having a skeleton derived from dipentaerythritol or pentaerythritol preferably has four or more (meth)acryloyl groups, and may be dipentaerythritol penta(meth)acrylate or dipentaerythritol hexa(meth)acrylate.
解像度及び硬化後の剥離特性をより向上させる観点から、(B)成分は、ビスフェノール型(メタ)アクリレートを含んでもよく、ビスフェノール型(メタ)アクリレートの中でもビスフェノールA型(メタ)アクリレートを含んでもよい。ビスフェノールA型(メタ)アクリレートとしては、例えば、2,2-ビス(4-((メタ)アクリロキシポリエトキシ)フェニル)プロパン、2,2-ビス(4-((メタ)アクリロキシポリプロポキシ)フェニル)プロパン、2,2-ビス(4-((メタ)アクリロキシポリブトキシ)フェニル)プロパン、及び2,2-ビス(4-((メタ)アクリロキシポリエトキシポリプロポキシ)フェニル)プロパンが挙げられる。中でも、解像度及びパターン形成性を更に向上させる観点から、2,2-ビス(4-((メタ)アクリロキシポリエトキシ)フェニル)プロパンが好ましい。 From the viewpoint of further improving the resolution and release properties after curing, component (B) may contain a bisphenol type (meth)acrylate, and among the bisphenol type (meth)acrylates, it may contain a bisphenol A type (meth)acrylate. Examples of bisphenol A type (meth)acrylates include 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolypropoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolybutoxy)phenyl)propane, and 2,2-bis(4-((meth)acryloxypolyethoxypolypropoxy)phenyl)propane. Among them, from the viewpoint of further improving the resolution and pattern formability, 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane is preferred.
商業的に入手可能なものとしては、例えば、2,2-ビス(4-((メタ)アクリロキシジプロポキシ)フェニル)プロパンは、BPE-200(新中村化学工業株式会社)、2,2-ビス(4-(メタクリロキシペンタエトキシ)フェニル)プロパンは、BPE-500(新中村化学工業株式会社)、FA-321M(日立化成株式会社)等が挙げられる。 Commercially available products include, for example, 2,2-bis(4-((meth)acryloxydipropoxy)phenyl)propane, BPE-200 (Shin-Nakamura Chemical Co., Ltd.), 2,2-bis(4-(methacryloxypentaethoxy)phenyl)propane, BPE-500 (Shin-Nakamura Chemical Co., Ltd.), and FA-321M (Hitachi Chemical Co., Ltd.).
ノニルフェノキシポリエチレンオキシアクリレートとしては、例えば、ノニルフェノキシテトラエチレンオキシアクリレート、ノニルフェノキシペンタエチレンオキシアクリレート、ノニルフェノキシヘキサエチレンオキシアクリレート、ノニルフェノキシヘプタエチレンオキシアクリレート、ノニルフェノキシオクタエチレンオキシアクリレート、ノニルフェノキシノナエチレンオキシアクリレート、ノニルフェノキシデカエチレンオキシアクリレート、及びノニルフェノキシウンデカエチレンオキシアクリレートが挙げられる。 Examples of nonylphenoxy polyethyleneoxyacrylates include nonylphenoxytetraethyleneoxyacrylate, nonylphenoxypentaethyleneoxyacrylate, nonylphenoxyhexaethyleneoxyacrylate, nonylphenoxyheptaethyleneoxyacrylate, nonylphenoxyoctaethyleneoxyacrylate, nonylphenoxynonaethyleneoxyacrylate, nonylphenoxydecaethyleneoxyacrylate, and nonylphenoxyundecaethyleneoxyacrylate.
<(C)光重合開始剤>
(C)成分としては、(B)成分を重合させることができる成分であれば、特に限定されず、通常用いられる光重合開始剤から適宜選択することができる。(C)成分は、1種を単独で又は2種以上を組み合わせて用いることができる。
<(C) Photopolymerization initiator>
The component (C) is not particularly limited as long as it is a component that can polymerize the component (B), and can be appropriately selected from commonly used photopolymerization initiators. The component (C) can be used alone or in combination of two or more.
(C)成分として、例えば、アシルホスフィンオキサイド系、オキシムエステル系、芳香族ケトン系、キノン系、アルキルフェノン系、イミダゾール系、アクリジン系、フェニルグリシン系、クマリン系等の光重合開始剤が挙げられる。 Examples of component (C) include photopolymerization initiators such as acylphosphine oxides, oxime esters, aromatic ketones, quinones, alkylphenones, imidazoles, acridines, phenylglycines, and coumarins.
(C)成分は、感度及び解像度をバランスよく向上する点で、アクリジン系光重合開始剤、フェニルグリシン系光重合開始剤、又は、イミダゾール系光重合開始剤を含んでもよい。 Component (C) may contain an acridine-based photopolymerization initiator, a phenylglycine-based photopolymerization initiator, or an imidazole-based photopolymerization initiator in order to improve sensitivity and resolution in a well-balanced manner.
アクリジン系光重合開始剤としては、例えば、9-フェニルアクリジン、9-(p-メチルフェニル)アクリジン、9-(m-メチルフェニル)アクリジン、9-(p-クロロフェニル)アクリジン、9-(m-クロロフェニル)アクリジン、9-アミノアクリジン、9-ジメチルアミノアクリジン、9-ジエチルアミノアクリジン、9-ペンチルアミノアクリジン、1,2-ビス(9-アクリジニル)エタン、1,4-ビス(9-アクリジニル)ブタン、1,6-ビス(9-アクリジニル)ヘキサン、1,8-ビス(9-アクリジニル)オクタン、1,10-ビス(9-アクリジニル)デカン、1,12-ビス(9-アクリジニル)ドデカン、1,14-ビス(9-アクリジニル)テトラデカン、1,16-ビス(9-アクリジニル)ヘキサデカン、1,18-ビス(9-アクリジニル)オクタデカン、1,20-ビス(9-アクリジニル)エイコサン等のビス(9-アクリジニル)アルカン、1,3-ビス(9-アクリジニル)-2-オキサプロパン、1,3-ビス(9-アクリジニル)-2-チアプロパン、及び1,5-ビス(9-アクリジニル)-3-チアペンタンが挙げられる。 Examples of acridine-based photopolymerization initiators include 9-phenylacridine, 9-(p-methylphenyl)acridine, 9-(m-methylphenyl)acridine, 9-(p-chlorophenyl)acridine, 9-(m-chlorophenyl)acridine, 9-aminoacridine, 9-dimethylaminoacridine, 9-diethylaminoacridine, 9-pentylaminoacridine, 1,2-bis(9-acridinyl)ethane, 1,4-bis(9-acridinyl)butane, 1,6-bis(9-acridinyl)hexane, and 1,8-bis(9-acridinyl)octaacridine. bis(9-acridinyl)alkanes such as 1,10-bis(9-acridinyl)decane, 1,12-bis(9-acridinyl)dodecane, 1,14-bis(9-acridinyl)tetradecane, 1,16-bis(9-acridinyl)hexadecane, 1,18-bis(9-acridinyl)octadecane, and 1,20-bis(9-acridinyl)eicosane; 1,3-bis(9-acridinyl)-2-oxapropane, 1,3-bis(9-acridinyl)-2-thiapropane, and 1,5-bis(9-acridinyl)-3-thiapentane.
フェニルグリシン系光重合開始剤としては、例えば、N-フェニルグリシン、N-メチル-N-フェニルグリシン、及びN-エチル-N-フェニルグリシンが挙げられる。 Examples of phenylglycine-based photopolymerization initiators include N-phenylglycine, N-methyl-N-phenylglycine, and N-ethyl-N-phenylglycine.
イミダゾール系光重合開始剤としては、例えば、2-(o-クロロフェニル)-4,5-ジフェニルビイミダゾール、2,2’,5-トリス-(o-クロロフェニル)-4-(3,4-ジメトキシフェニル)-4’,5’-ジフェニルビイミダゾール、2,4-ビス-(o-クロロフェニル)-5-(3,4-ジメトキシフェニル)-ジフェニルビイミダゾール、2,4,5-トリス-(o-クロロフェニル)-ジフェニルビイミダゾール、2-(o-クロロフェニル)-ビス-4,5-(3,4-ジメトキシフェニル)-ビイミダゾール、2,2’-ビス-(2-フルオロフェニル)-4,4’,5,5’-テトラキス-(3-メトキシフェニル)-ビイミダゾール、2,2’-ビス-(2,3-ジフルオロメチルフェニル)-4,4’,5,5’-テトラキス-(3-メトキシフェニル)-ビイミダゾール、2,2’-ビス-(2,4-ジフルオロフェニル)-4,4’,5,5’-テトラキス-(3-メトキシフェニル)-ビイミダゾール、及び2,2’-ビス-(2,5-ジフルオロフェニル)-4,4’,5,5’-テトラキス-(3-メトキシフェニル)-ビイミダゾールが挙げられる。 Examples of imidazole-based photopolymerization initiators include 2-(o-chlorophenyl)-4,5-diphenylbiimidazole, 2,2',5-tris-(o-chlorophenyl)-4-(3,4-dimethoxyphenyl)-4',5'-diphenylbiimidazole, 2,4-bis-(o-chlorophenyl)-5-(3,4-dimethoxyphenyl)-diphenylbiimidazole, 2,4,5-tris-(o-chlorophenyl)-diphenylbiimidazole, 2-(o-chlorophenyl)-bis-4,5-(3,4-dimethoxyphenyl)-biimidazole, 2,2'- These include bis-(2-fluorophenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,3-difluoromethylphenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,4-difluorophenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole, and 2,2'-bis-(2,5-difluorophenyl)-4,4',5,5'-tetrakis-(3-methoxyphenyl)-biimidazole.
(C)成分の含有量は、(A)成分及び(B)成分の総量100質量部に対して、0.1~10質量部、0.2~5質量部、又は0.5~4質量部であってもよい。(C)成分の含有量が0.1質量部以上では、光感度、解像度及び密着性が向上する傾向があり、10質量部以下では、レジストパターン形成性により優れる傾向がある。 The content of component (C) may be 0.1 to 10 parts by mass, 0.2 to 5 parts by mass, or 0.5 to 4 parts by mass, based on 100 parts by mass of the total amount of components (A) and (B). When the content of component (C) is 0.1 parts by mass or more, the photosensitivity, resolution, and adhesion tend to be improved, and when it is 10 parts by mass or less, the resist pattern formability tends to be better.
<(D)成分:光増感剤>
本実施形態に係る感光性樹脂組成物は、(D)成分として光増感剤を更に含有してもよい。(D)成分を含有することにより、露光に用いる活性光線の吸収波長を有効に利用することができる。(D)成分は、1種を単独で又は2種以上を組み合わせて用いることができる。
<Component (D): Photosensitizer>
The photosensitive resin composition according to the present embodiment may further contain a photosensitizer as component (D). By containing component (D), it is possible to effectively utilize the absorption wavelength of the actinic ray used for exposure. The component (D) may be used alone or in combination of two or more.
(D)成分としては、例えば、ジアルキルアミノベンゾフェノン化合物、ピラゾリン化合物、アントラセン化合物、クマリン化合物、キサントン化合物、チオキサントン化合物、オキサゾール化合物、ベンゾオキサゾール化合物、チアゾール化合物、ベンゾチアゾール化合物、トリアゾール化合物、スチルベン化合物、トリアジン化合物、チオフェン化合物、ナフタルイミド化合物、トリアリールアミン化合物、及びアミノアクリジン化合物が挙げられる。(D)成分は、解像度をより向上する観点からピラゾリン化合物又はアントラセン化合物を含んでもよい。 Component (D) may, for example, be a dialkylaminobenzophenone compound, a pyrazoline compound, an anthracene compound, a coumarin compound, a xanthone compound, a thioxanthone compound, an oxazole compound, a benzoxazole compound, a thiazole compound, a benzothiazole compound, a triazole compound, a stilbene compound, a triazine compound, a thiophene compound, a naphthalimide compound, a triarylamine compound, or an aminoacridine compound. Component (D) may contain a pyrazoline compound or an anthracene compound in order to further improve resolution.
ピラゾリン化合物としては、例えば、1-(4-メトキシフェニル)-3-スチリル-5-フェニル-ピラゾリン、1-フェニル-3-(4-メトキシスチリル)-5-(4-メトキシフェニル)-ピラゾリン、1,5-ビス-(4-メトキシフェニル)-3-(4-メトキシスチリル)-ピラゾリン、1-(4-イソプロピルフェニル)-3-スチリル-5-フェニル-ピラゾリン、1-フェニル-3-(4-イソプロピルスチリル)-5-(4-イソプロピルフェニル)-ピラゾリン、1,5-ビス-(4-イソプロピルフェニル)-3-(4-イソプロピルスチリル)-ピラゾリン、1-(4-メトキシフェニル)-3-(4-tert-ブチル-スチリル)-5-(4-tert-ブチル-フェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(4-メトキシスチリル)-5-(4-メトキシフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(4-tert-ブチル-スチリル)-5-(4-tert-ブチル-フェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(4-イソプロピル-スチリル)-5-(4-イソプロピル-フェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(4-イソプロピルスチリル)-5-(4-イソプロピルフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(4-メトキシスチリル)-5-(4-メトキシフェニル)-ピラゾリン、1-フェニル-3-(3,5-ジメトキシスチリル)-5-(3,5-ジメトキシフェニル)-ピラゾリン、1-フェニル-3-(3,4-ジメトキシスチリル)-5-(3,4-ジメトキシフェニル)-ピラゾリン、1-フェニル-3-(2,6-ジメトキシスチリル)-5-(2,6-ジメトキシフェニル)-ピラゾリン、1-フェニル-3-(2,5-ジメトキシスチリル)-5-(2,5-ジメトキシフェニル)-ピラゾリン、1-フェニル-3-(2,3-ジメトキシスチリル)-5-(2,3-ジメトキシフェニル)-ピラゾリン、1-フェニル-3-(2,4-ジメトキシスチリル)-5-(2,4-ジメトキシフェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(3,5-ジメトキシスチリル)-5-(3,5-ジメトキシフェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(3,4-ジメトキシスチリル)-5-(3,4-ジメトキシフェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(2,6-ジメトキシスチリル)-5-(2,6-ジメトキシフェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(2,5-ジメトキシスチリル)-5-(2,5-ジメトキシフェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(2,3-ジメトキシスチリル)-5-(2,3-ジメトキシフェニル)-ピラゾリン、1-(4-メトキシフェニル)-3-(2,4-ジメトキシスチリル)-5-(2,4-ジメトキシフェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(3,5-ジメトキシスチリル)-5-(3,5-ジメトキシフェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(3,4-ジメトキシスチリル)-5-(3,4-ジメトキシフェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(2,6-ジメトキシスチリル)-5-(2,6-ジメトキシフェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(2,5-ジメトキシスチリル)-5-(2,5-ジメトキシフェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(2,3-ジメトキシスチリル)-5-(2,3-ジメトキシフェニル)-ピラゾリン、1-(4-tert-ブチル-フェニル)-3-(2,4-ジメトキシスチリル)-5-(2,4-ジメトキシフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(3,5-ジメトキシスチリル)-5-(3,5-ジメトキシフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(3,4-ジメトキシスチリル)-5-(3,4-ジメトキシフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(2,6-ジメトキシスチリル)-5-(2,6-ジメトキシフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(2,5-ジメトキシスチリル)-5-(2,5-ジメトキシフェニル)-ピラゾリン、1-(4-イソプロピル-フェニル)-3-(2,3-ジメトキシスチリル)-5-(2,3-ジメトキシフェニル)-ピラゾリン、及び1-(4-イソプロピル-フェニル)-3-(2,4-ジメトキシスチリル)-5-(2,4-ジメトキシフェニル)-ピラゾリンが挙げられる。 Examples of pyrazoline compounds include 1-(4-methoxyphenyl)-3-styryl-5-phenyl-pyrazoline, 1-phenyl-3-(4-methoxystyryl)-5-(4-methoxyphenyl)-pyrazoline, 1,5-bis-(4-methoxyphenyl)-3-(4-methoxystyryl)-pyrazoline, 1-(4-isopropylphenyl)-3-styryl-5-phenyl-pyrazoline, 1-phenyl-3-(4-isopropylstyryl)-5-(4-isopropylphenyl)-pyrazoline, and 1,5-bis-(4-isopropylphenyl)-3-(4-isopropyl propylstyryl)-pyrazoline, 1-(4-methoxyphenyl)-3-(4-tert-butyl-styryl)-5-(4-tert-butyl-phenyl)-pyrazoline, 1-(4-tert-butyl-phenyl)-3-(4-methoxystyryl)-5-(4-methoxyphenyl)-pyrazoline, 1-(4-isopropyl-phenyl)-3-(4-tert-butyl-styryl)-5-(4-tert-butyl-phenyl)-pyrazoline, 1-(4-tert-butyl-phenyl)-3-(4-isopropyl-styryl)-5-(4-isopropyl-phenyl) 1-(4-methoxyphenyl)-3-(4-isopropylstyryl)-5-(4-isopropylphenyl)-pyrazoline, 1-(4-isopropyl-phenyl)-3-(4-methoxystyryl)-5-(4-methoxyphenyl)-pyrazoline, 1-phenyl-3-(3,5-dimethoxystyryl)-5-(3,5-dimethoxyphenyl)-pyrazoline, 1-phenyl-3-(3,4-dimethoxystyryl)-5-(3,4-dimethoxyphenyl)-pyrazoline, 1-phenyl-3-(2,6-dimethoxystyryl)-5-(2,6- dimethoxyphenyl)-pyrazoline, 1-phenyl-3-(2,5-dimethoxystyryl)-5-(2,5-dimethoxyphenyl)-pyrazoline, 1-phenyl-3-(2,3-dimethoxystyryl)-5-(2,3-dimethoxyphenyl)-pyrazoline, 1-phenyl-3-(2,4-dimethoxystyryl)-5-(2,4-dimethoxyphenyl)-pyrazoline, 1-(4-methoxyphenyl)-3-(3,5-dimethoxystyryl)-5-(3,5-dimethoxyphenyl)-pyrazoline, 1-(4-methoxyphenyl)-3-(3,4-dimethoxystyryl) 1-(4-methoxyphenyl)-3-(2,6-dimethoxystyryl)-5-(2,6-dimethoxyphenyl)-pyrazoline, 1-(4-methoxyphenyl)-3-(2,5-dimethoxystyryl)-5-(2,5-dimethoxyphenyl)-pyrazoline, 1-(4-methoxyphenyl)-3-(2,3-dimethoxystyryl)-5-(2,3-dimethoxyphenyl)-pyrazoline, 1-(4-methoxyphenyl)-3-(2,4-dimethoxystyryl)-5-(2,4-dimethoxyphenyl) -pyrazoline, 1-(4-tert-butyl-phenyl)-3-(3,5-dimethoxystyryl)-5-(3,5-dimethoxyphenyl)-pyrazoline, 1-(4-tert-butyl-phenyl)-3-(3,4-dimethoxystyryl)-5-(3,4-dimethoxyphenyl)-pyrazoline, 1-(4-tert-butyl-phenyl)-3-(2,6-dimethoxystyryl)-5-(2,6-dimethoxyphenyl)-pyrazoline, 1-(4-tert-butyl-phenyl)-3-(2,5-dimethoxystyryl)-5-(2,5-dimethoxyphenyl)- Pyrazoline, 1-(4-tert-butyl-phenyl)-3-(2,3-dimethoxystyryl)-5-(2,3-dimethoxyphenyl)-pyrazoline, 1-(4-tert-butyl-phenyl)-3-(2,4-dimethoxystyryl)-5-(2,4-dimethoxyphenyl)-pyrazoline, 1-(4-isopropyl-phenyl)-3-(3,5-dimethoxystyryl)-5-(3,5-dimethoxyphenyl)-pyrazoline, 1-(4-isopropyl-phenyl)-3-(3,4-dimethoxystyryl)-5-(3,4-dimethoxyphenyl)-pyrazoline , 1-(4-isopropyl-phenyl)-3-(2,6-dimethoxystyryl)-5-(2,6-dimethoxyphenyl)-pyrazoline, 1-(4-isopropyl-phenyl)-3-(2,5-dimethoxystyryl)-5-(2,5-dimethoxyphenyl)-pyrazoline, 1-(4-isopropyl-phenyl)-3-(2,3-dimethoxystyryl)-5-(2,3-dimethoxyphenyl)-pyrazoline, and 1-(4-isopropyl-phenyl)-3-(2,4-dimethoxystyryl)-5-(2,4-dimethoxyphenyl)-pyrazoline.
アントラセン化合物としては、例えば、9,10-ジメトキシアントラセン、9,10-ジエトキシアントラセン、9,10-ジプロポキシアントラセン、9,10-ジブトキシアントラセン、及び9,10-ジペントキシアントラセンが挙げられる。 Examples of anthracene compounds include 9,10-dimethoxyanthracene, 9,10-diethoxyanthracene, 9,10-dipropoxyanthracene, 9,10-dibutoxyanthracene, and 9,10-dipentoxyanthracene.
(D)成分の含有量は、光感度及び解像性を向上させる観点から、(A)成分及び(B)成分の総量100質量部に対して、0.01~5質量部、0.01~1質量部、又は0.01~0.2質量部であってもよい。 From the viewpoint of improving photosensitivity and resolution, the content of component (D) may be 0.01 to 5 parts by mass, 0.01 to 1 part by mass, or 0.01 to 0.2 parts by mass per 100 parts by mass of the total amount of components (A) and (B).
(その他の成分)
本実施形態に係る感光性樹脂組成物には、必要に応じて、染料、光発色剤、熱発色防止剤、可塑剤、顔料、充填剤、消泡剤、難燃剤、密着性付与剤、レベリング剤、剥離促進剤、酸化防止剤、香料、イメージング剤、熱架橋剤、重合禁止剤等の添加剤を更に含有してもよい。これらの添加剤は、1種を単独で又は2種以上を組み合わせて用いることができる。
(Other ingredients)
The photosensitive resin composition according to the present embodiment may further contain additives such as dyes, photocoloring agents, thermal coloring inhibitors, plasticizers, pigments, fillers, defoamers, flame retardants, adhesion imparting agents, leveling agents, peeling promoters, antioxidants, fragrances, imaging agents, thermal crosslinking agents, polymerization inhibitors, etc. These additives may be used alone or in combination of two or more.
染料としては、例えば、マラカイトグリーン、ビクトリアピュアブルー、ブリリアントグリーン、及びメチルバイオレットが挙げられる。光発色剤としては、例えば、トリブロモフェニルスルホン、ロイコクリスタルバイオレット、ジフェニルアミン、ベンジルアミン、トリフェニルアミン、ジエチルアニリン、及びo-クロロアニリンが挙げられる。可塑剤としては、例えば、p-トルエンスルホンアミドが挙げられる。 Dyes include, for example, malachite green, Victoria Pure Blue, brilliant green, and methyl violet. Photochromic agents include, for example, tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline. Plasticizers include, for example, p-toluenesulfonamide.
感光性樹脂組成物は、必要に応じて、メタノール、エタノール、アセトン、メチルエチルケトン、メチルセロソルブ、エチルセロソルブ、トルエン、N,N-ジメチルホルムアミド、プロピレングリコールモノメチルエーテル等の溶媒又はこれらの混合溶媒に溶解して、固形分が30~60質量%程度の溶液として調製することができる。 The photosensitive resin composition can be prepared as necessary by dissolving it in a solvent such as methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, propylene glycol monomethyl ether, or a mixture of these solvents, to form a solution with a solids content of about 30 to 60% by mass.
[感光性エレメント]
本実施形態の感光性エレメントは、支持体と、該支持体上に形成されたと感光層とを備え、感光層は上述の感光性樹脂組成物を含む。本実施形態の感光性エレメントを用いる場合には、感光層を基板上にラミネートした後、支持体(支持フィルム)を剥離することなく露光してもよい。本実施形態に係る感光性エレメント1は、図1にその一例の模式断面図を示すように、支持体2と、支持体2上に形成された上記感光性樹脂組成物に由来する感光層3とを備え、必要に応じて設けられる保護層4等のその他の層を備えて構成される。
[Photosensitive element]
The photosensitive element of this embodiment includes a support and a photosensitive layer formed on the support, and the photosensitive layer includes the above-mentioned photosensitive resin composition. When using the photosensitive element of this embodiment, the photosensitive layer may be laminated on a substrate and then exposed without peeling off the support (support film). As shown in the schematic cross-sectional view of an example in FIG. 1, the photosensitive element 1 according to this embodiment includes a support 2 and a
(支持体)
支持体しては、例えば、ポリエチレンテレフタレート(PET)、ポリブチレンテレフタレート(PBT)、ポリエチレン-2,6-ナフタレート(PEN)等のポリエステルフィルム、及びポリプロピレン、ポリエチレン等のポリオレフィンフィルムが挙げられる。中でも、入手し易く、且つ、製造工程におけるハンドリング性(特に、耐熱性、熱収縮率、破断強度)に優れる点で、PETフィルムであってもよい。
(Support)
Examples of the support include polyester films such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene-2,6-naphthalate (PEN), and polyolefin films such as polypropylene and polyethylene. Among these, a PET film may be used because it is easily available and has excellent handleability (particularly heat resistance, heat shrinkage rate, and breaking strength) in the production process.
支持体のヘーズは、0.01~1.0%又は0.01~0.5%であってもよい。ヘーズが0.01%以上であると、支持体自体を製造し易くなる傾向があり、1.0%以下であると、レジストパターンに発生し得る微小欠損を低減する傾向がある。「ヘーズ」とは、曇り度を意味する。本開示におけるヘーズは、JIS K 7105に規定される方法に準拠して、市販の曇り度計(濁度計)を用いて測定された値をいう。ヘーズは、例えば、NDH-5000(日本電色工業(株)製)等の市販の濁度計で測定が可能である。 The haze of the support may be 0.01 to 1.0% or 0.01 to 0.5%. If the haze is 0.01% or more, the support itself tends to be easier to manufacture, and if it is 1.0% or less, micro-defects that may occur in the resist pattern tend to be reduced. "Haze" means cloudiness. In this disclosure, the haze refers to a value measured using a commercially available haze meter (turbidity meter) in accordance with the method specified in JIS K 7105. Haze can be measured, for example, using a commercially available turbidity meter such as NDH-5000 (manufactured by Nippon Denshoku Industries Co., Ltd.).
支持体の厚みは、1~100μm、5~60μm、10~50μm、10~40μm、10~30μm、又は10~25μmであってもよい。支持体の厚みが1μm以上であることで、支持体を剥離する際に支持体が破れることを抑制できる傾向がある。また、支持体の厚みが100μm以下であることで、支持体を通して露光する場合に解像性が低下することを抑制することができる。 The thickness of the support may be 1 to 100 μm, 5 to 60 μm, 10 to 50 μm, 10 to 40 μm, 10 to 30 μm, or 10 to 25 μm. When the thickness of the support is 1 μm or more, it tends to be possible to prevent the support from breaking when peeling it off. Furthermore, when the thickness of the support is 100 μm or less, it is possible to prevent a decrease in resolution when exposure is performed through the support.
(保護層)
感光性エレメントは、必要に応じて保護層を更に備えてもよい。保護層としては、感光層と支持体との間の接着力よりも、感光層と保護層との間の接着力が小さくなるようなフィルムを用いてもよく、また、低フィッシュアイのフィルムを用いてもよい。具体的には、例えば、上述する支持体として用いることができるものが挙げられる。感光層からの剥離性の見地から、ポリエチレンフィルムであってもよい。保護層の厚さは、用途により異なるが、1~100μm程度であってもよい。
(Protective Layer)
The photosensitive element may further include a protective layer, if necessary. As the protective layer, a film may be used in which the adhesive strength between the photosensitive layer and the protective layer is smaller than the adhesive strength between the photosensitive layer and the support, or a film with low fisheyes may be used. Specific examples include those that can be used as the support described above. From the viewpoint of peelability from the photosensitive layer, a polyethylene film may be used. The thickness of the protective layer may be about 1 to 100 μm, depending on the application.
感光性エレメントは、例えば、以下のようにして製造することができる。すなわち、支持体上に、感光性樹脂組成物の溶液(塗布液)を塗布して塗布層を形成し、これを乾燥することで感光層を形成する。次いで、感光層の支持体とは反対側の面を保護層で被覆することにより、支持体と、該支持体上に形成された感光層と、該感光層上に積層された保護層とを備える、感光性エレメントが得られる。 The photosensitive element can be manufactured, for example, as follows. That is, a solution (coating liquid) of the photosensitive resin composition is applied onto a support to form a coating layer, which is then dried to form a photosensitive layer. Next, the surface of the photosensitive layer opposite the support is covered with a protective layer to obtain a photosensitive element comprising the support, the photosensitive layer formed on the support, and the protective layer laminated on the photosensitive layer.
塗布液の支持体上への塗布は、例えば、ロールコート、コンマコート、グラビアコート、エアーナイフコート、ダイコート、バーコート等の公知の方法により行うことができる。 The coating solution can be applied to the support by known methods such as roll coating, comma coating, gravure coating, air knife coating, die coating, and bar coating.
塗布層の乾燥は、塗布層から有機溶媒の少なくとも一部を除去することができれば特に制限はない。例えば、70~150℃にて、5~30分間程度行ってもよい。乾燥後、感光層中の残存溶媒量は、後の工程での溶媒の拡散を防止する観点から、2質量%以下であってもよい。 There are no particular limitations on the drying of the coating layer, so long as at least a portion of the organic solvent can be removed from the coating layer. For example, drying may be performed at 70 to 150°C for about 5 to 30 minutes. After drying, the amount of solvent remaining in the photosensitive layer may be 2% by mass or less, from the viewpoint of preventing diffusion of the solvent in subsequent steps.
感光性エレメントにおける感光層の厚みは、用途により適宜選択することができるが、乾燥後の厚みで1~100μm、1~50μm、又は、5~40μmであってもよい。厚さが1μm以上であることで、工業的な塗工が容易になり、生産性が向上する。また、100μm以下であることで、密着性及び解像度が向上する。 The thickness of the photosensitive layer in the photosensitive element can be appropriately selected depending on the application, but may be 1 to 100 μm, 1 to 50 μm, or 5 to 40 μm after drying. A thickness of 1 μm or more facilitates industrial coating and improves productivity. A thickness of 100 μm or less improves adhesion and resolution.
感光性エレメントの形態は特に制限されない。例えば、シート状であってもよく、巻芯にロール状に巻き取った形状であってもよい。ロール状に巻き取る場合、支持フィルムが外側になるように巻き取ってもよい。巻芯としては、例えば、ポリエチレン樹脂、ポリプロピレン樹脂、ポリスチレン樹脂、ポリ塩化ビニル樹脂又はABS樹脂(アクリロニトリル-ブタジエン-スチレン共重合体)等のプラスチックが挙げられる。 The form of the photosensitive element is not particularly limited. For example, it may be in the form of a sheet, or may be wound into a roll around a core. When wound into a roll, it may be wound so that the support film is on the outside. Examples of the core include plastics such as polyethylene resin, polypropylene resin, polystyrene resin, polyvinyl chloride resin, and ABS resin (acrylonitrile-butadiene-styrene copolymer).
ロール状の感光性エレメントの端面には、端面保護の点から端面セパレータを設置してもよく、耐エッジフュージョンの点から防湿端面セパレータを設置してもよい。感光性エレメントは、透湿性の小さいブラックシートに包んで包装してもよい。 An end separator may be installed on the end surface of the rolled photosensitive element to protect the end surface, and a moisture-proof end separator may be installed to prevent edge fusion. The photosensitive element may be wrapped in a black sheet with low moisture permeability.
感光性エレメントは、例えば、後述するレジストパターンの形成方法に好適に用いることができる。中でも、解像性の観点で、めっき処理によって導体パターンを形成する製造方法への応用に適している。 The photosensitive element can be suitably used, for example, in the resist pattern forming method described below. In particular, from the viewpoint of resolution, it is suitable for application to a manufacturing method in which a conductor pattern is formed by plating processing.
[レジストパターンの形成方法]
本実施形態のレジストパターンの形成方法は、(i)基板上に、上記感光性樹脂組成物、又は、上記感光性エレメントを用いて、感光層を形成する工程(感光層形成工程)と、(ii)上記感光層の少なくとも一部(所定部分)に活性光線を照射して、光硬化部を形成する工程(露光工程)と、(iii)上記基板上から上記光硬化部以外の少なくとも一部を除去してレジストパターンを形成する工程(現像工程)と、を備え、必要に応じてその他の工程を含んで構成されてもよい。レジストパターンとは、感光性樹脂組成物の光硬化物パターンともいえ、レリーフパターンともいえる。レジストパターンの形成方法は、レジストパターン付き基板の製造方法ともいえる。
[Method of forming a resist pattern]
The method for forming a resist pattern of this embodiment includes (i) a step of forming a photosensitive layer on a substrate using the photosensitive resin composition or the photosensitive element (photosensitive layer forming step), (ii) a step of irradiating at least a part (predetermined part) of the photosensitive layer with active light rays to form a photocured part (exposure step), and (iii) a step of removing at least a part of the substrate other than the photocured part to form a resist pattern (development step), and may include other steps as necessary. The resist pattern may be a photocured product pattern of the photosensitive resin composition or a relief pattern. The method for forming a resist pattern may be a method for producing a substrate with a resist pattern.
((i)感光層形成工程)
基板上に感光層を形成する方法としては、例えば、上記感光性樹脂組成物を塗布及び乾燥してもよく、又は、上記感光性エレメントから保護層を除去した後、感光性エレメントの感光層を加熱しながら上記基板に圧着してもよい。感光性エレメントを用いた場合、基板と感光層と支持体とからなり、これらが順に積層された積層体が得られる。上記基板としては特に制限されないが、通常、絶縁層と絶縁層上に形成された導体層とを備えた回路形成用基板、又は合金基材等のダイパッド(リードフレーム用基材)が用いられる。
(i) Photosensitive layer forming step)
The method of forming the photosensitive layer on the substrate may be, for example, coating and drying the photosensitive resin composition, or removing the protective layer from the photosensitive element, and then pressing the photosensitive layer of the photosensitive element onto the substrate while heating. When the photosensitive element is used, a laminate consisting of a substrate, a photosensitive layer, and a support, which are laminated in order, is obtained. The substrate is not particularly limited, but is usually a circuit-forming substrate having an insulating layer and a conductor layer formed on the insulating layer, or a die pad (substrate for lead frame) such as an alloy substrate.
感光性エレメントを用いた場合、感光層形成工程は、密着性及び追従性の見地から、減圧下で行うことが好ましい。圧着の際の感光層及び/又は基板の加熱は、70~130℃の温度で行ってもよい。圧着は、0.1~1.0MPa程度(1~10kgf/cm2程度)の圧力で行ってもよいが、これらの条件は必要に応じて適宜選択される。なお、感光層を70~130℃に加熱すれば、予め基板を予熱処理することは必要ではないが、密着性及び追従性を更に向上させるために、基板の予熱処理を行うこともできる。 When a photosensitive element is used, the photosensitive layer forming step is preferably carried out under reduced pressure from the viewpoint of adhesion and followability. The photosensitive layer and/or the substrate may be heated at a temperature of 70 to 130° C. during pressure bonding. The pressure bonding may be carried out at a pressure of about 0.1 to 1.0 MPa (about 1 to 10 kgf/cm 2 ), and these conditions are appropriately selected as necessary. If the photosensitive layer is heated to 70 to 130° C., it is not necessary to preheat the substrate in advance, but the substrate may be preheated in order to further improve adhesion and followability.
((ii)露光工程)
露光工程においては、基板上に形成された感光層の少なくとも一部に活性光線を照射することで、活性光線が照射された部分が光硬化して、潜像が形成される。この際、感光層上に支持体が存在する場合、その支持体が活性光線に対して透過性であれば、支持体を通して活性光線を照射することができるが、支持体が遮光性の場合には、支持体を除去した後に感光層に活性光線を照射する。
((ii) Exposure Step)
In the exposure step, at least a part of the photosensitive layer formed on the substrate is irradiated with active light rays, whereby the part irradiated with the active light rays is photocured to form a latent image. In this case, if a support is present on the photosensitive layer, and if the support is transparent to the active light rays, the active light rays can be irradiated through the support, but if the support is light-shielding, the support is removed before the photosensitive layer is irradiated with the active light rays.
露光方法としては、アートワークと呼ばれるネガ又はポジマスクパターンを介して活性光線を画像状に照射する方法(マスク露光法)が挙げられる。また、投影露光法により活性光線を画像状に照射する方法を採用してもよい。また、LDI(Laser Direct Imaging)露光法、DLP(Digital Light Processing)露光法等の直接描画露光法により活性光線を画像状に照射する方法を採用してもよい。 Examples of the exposure method include a method of irradiating an active light beam in an image-wise manner through a negative or positive mask pattern called artwork (mask exposure method). A method of irradiating an active light beam in an image-wise manner by a projection exposure method may also be used. A method of irradiating an active light beam in an image-wise manner by a direct imaging exposure method such as an LDI (Laser Direct Imaging) exposure method or a DLP (Digital Light Processing) exposure method may also be used.
活性光線の光源としては、公知の光源を用いることができ、例えば、カーボンアーク灯、水銀蒸気アーク灯、高圧水銀灯、キセノンランプ、アルゴンレーザ等のガスレーザ、YAGレーザ等の固体レーザ、半導体レーザ等の紫外線、可視光を有効に放射するものが用いられる。 The light source for the actinic rays can be any known light source, including, for example, carbon arc lamps, mercury vapor arc lamps, high pressure mercury lamps, xenon lamps, gas lasers such as argon lasers, solid-state lasers such as YAG lasers, and semiconductor lasers that effectively emit ultraviolet light and visible light.
((iii)現像工程)
現像工程においては、上記感光層の光硬化部以外の少なくとも一部が基板上から除去されることで、レジストパターンが基板上に形成される。
((iii) Development Step)
In the developing step, at least a portion of the photosensitive layer other than the photocured portion is removed from the substrate, thereby forming a resist pattern on the substrate.
感光層上に支持体が存在している場合には、支持体を除去してから、上記光硬化部以外の領域(未露光部分ともいえる)の除去(現像)を行う。現像方法には、ウェット現像とドライ現像とがあるが、ウェット現像が広く用いられている。 If a support is present on the photosensitive layer, the support is removed before removing (developing) the areas other than the photocured areas (also called the unexposed areas). There are two development methods: wet development and dry development, with wet development being more widely used.
ウェット現像による場合、感光性樹脂組成物に対応した現像液を用いて、公知の現像方法により現像する。現像方法としては、ディップ方式、パドル方式、スプレー方式、ブラッシング、スラッピング、スクラッビング、揺動浸漬等を用いた方法が挙げられ、解像性向上の観点からは、高圧スプレー方式を用いてもよい。これら2種以上の方法を組み合わせて現像を行ってもよい。 In the case of wet development, a developer suitable for the photosensitive resin composition is used, and development is performed by a known development method. Examples of development methods include a dip method, a paddle method, a spray method, brushing, slapping, scrubbing, and rocking immersion, and from the viewpoint of improving resolution, a high-pressure spray method may be used. Development may be performed by combining two or more of these methods.
現像液の構成は上記感光性樹脂組成物の構成に応じて適宜選択される。現像液としては、例えば、アルカリ性水溶液及び有機溶媒現像液が挙げられる。 The composition of the developer is appropriately selected depending on the composition of the photosensitive resin composition. Examples of the developer include an alkaline aqueous solution and an organic solvent developer.
安全且つ安定であり、操作性が良好である見地から、現像液として、アルカリ性水溶液を用いてもよい。アルカリ性水溶液の塩基としては、リチウム、ナトリウム又はカリウムの水酸化物等の水酸化アルカリ;リチウム、ナトリウム、カリウム又はアンモニウムの炭酸塩又は重炭酸塩等の炭酸アルカリ;リン酸カリウム、リン酸ナトリウム等のアルカリ金属リン酸塩;ピロリン酸ナトリウム、ピロリン酸カリウム等のアルカリ金属ピロリン酸塩;ホウ砂、メタケイ酸ナトリウム、水酸化テトラメチルアンモニウム、エタノールアミン、エチレンジアミン、ジエチレントリアミン、2-アミノ-2-ヒドロキシメチル-1,3-プロパンジオール、1,3-ジアミノプロパノール-2、モルホリンなどが用いられる。 From the viewpoint of safety, stability, and good operability, an alkaline aqueous solution may be used as the developer. Examples of bases for the alkaline aqueous solution include alkali hydroxides such as lithium, sodium, or potassium hydroxide; alkali carbonates such as lithium, sodium, potassium, or ammonium carbonates or bicarbonates; alkali metal phosphates such as potassium phosphate and sodium phosphate; alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; borax, sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3-propanediol, 1,3-diaminopropanol-2, and morpholine.
現像に用いるアルカリ性水溶液としては、0.1~5質量%炭酸ナトリウムの希薄溶液、0.1~5質量%炭酸カリウムの希薄溶液、0.1~5質量%水酸化ナトリウムの希薄溶液、0.1~5質量%四ホウ酸ナトリウムの希薄溶液等を用いることができる。アルカリ性水溶液のpHは、9~14の範囲としてもよく、その温度は、感光層のアルカリ現像性に合わせて調節できる。アルカリ性水溶液中には、例えば、表面活性剤、消泡剤、現像を促進させるための少量の有機溶媒等を混入させてもよい。 The alkaline aqueous solution used for development may be a dilute solution of 0.1 to 5% by mass sodium carbonate, a dilute solution of 0.1 to 5% by mass potassium carbonate, a dilute solution of 0.1 to 5% by mass sodium hydroxide, or a dilute solution of 0.1 to 5% by mass sodium tetraborate. The pH of the alkaline aqueous solution may be in the range of 9 to 14, and the temperature can be adjusted according to the alkaline developability of the photosensitive layer. For example, a surfactant, an antifoaming agent, or a small amount of an organic solvent to promote development may be mixed into the alkaline aqueous solution.
アルカリ性水溶液に用いられる有機溶媒としては、例えば、アセトン、酢酸エチル、炭素数1~4のアルコキシ基をもつアルコキシエタノール、エチルアルコール、イソプロピルアルコール、ブチルアルコール、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、及びジエチレングリコールモノブチルエーテルが挙げられる。 Examples of organic solvents that can be used in alkaline aqueous solutions include acetone, ethyl acetate, alkoxyethanols with an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether.
有機溶媒現像液に用いられる有機溶媒としては、例えば、1,1,1-トリクロロエタン、N-メチルピロリドン、N,N-ジメチルホルムアミド、シクロヘキサノン、メチルイソブチルケトン及びγ-ブチロラクトン等が挙げられる。これらの有機溶媒には、引火防止のため、1~20質量%の範囲となるように水を添加して有機溶媒現像液としてもよい。 Examples of organic solvents used in the organic solvent developer include 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and γ-butyrolactone. To prevent ignition, water may be added to these organic solvents in a range of 1 to 20% by weight to form an organic solvent developer.
本実施形態におけるレジストパターンの形成方法においては、現像工程において未硬化部分を除去した後、必要に応じて60~250℃程度での加熱又は0.2~10J/cm2程度の露光を行うことにより、レジストパターンを更に硬化する工程を含んでもよい。 The method for forming a resist pattern in this embodiment may include a step of further curing the resist pattern by heating at about 60 to 250° C. or exposing to light at about 0.2 to 10 J/cm 2 , as necessary, after removing the uncured portions in the development step.
[配線パターンの形成方法]
本実施形態に係る配線パターンの形成方法は、上記レジストパターンの形成方法によりレジストパターンが形成された基板をエッチング処理又はめっき処理して導体パターンを形成する工程を有する。配線パターンの形成方法は、エッチング処理又はめっき処理の後に、光硬化部をアルカリ性水溶液により除去する工程を更に備えてよい。
[Method of forming wiring pattern]
The method for forming a wiring pattern according to the present embodiment includes a step of forming a conductor pattern by etching or plating a substrate on which a resist pattern has been formed by the method for forming a resist pattern described above. The method for forming a wiring pattern may further include a step of removing the photocured portion with an alkaline aqueous solution after the etching or plating.
めっき処理では、基板上に形成されたレジストパターンをマスクとして、基板上に設けられた導体層にめっき処理が行われる。めっき処理の後、後述するレジストパターンの除去によりレジストを除去し、更にこのレジストによって被覆されていた導体層をエッチングして、導体パターンを形成してもよい。めっき処理の方法としては、電解めっき処理であっても、無電解めっき処理であってもよいが、無電解めっき処理であってもよい。 In the plating process, the conductor layer provided on the substrate is plated using the resist pattern formed on the substrate as a mask. After the plating process, the resist is removed by removing the resist pattern as described below, and the conductor layer covered by the resist may be etched to form a conductor pattern. The plating method may be electrolytic plating or electroless plating, or may be electroless plating.
一方、エッチング処理では、基板上に形成されたレジストパターンをマスクとして、基板上に設けられた導体層をエッチング除去し、導体パターンを形成する。エッチング処理の方法は、除去すべき導体層に応じて適宜選択される。エッチング液としては、例えば、塩化第二銅溶液、塩化第二鉄溶液、アルカリエッチング溶液、過酸化水素系エッチング液等が挙げられる。 On the other hand, in the etching process, the conductor layer on the substrate is etched away using a resist pattern formed on the substrate as a mask to form a conductor pattern. The etching method is appropriately selected depending on the conductor layer to be removed. Examples of etching solutions include cupric chloride solution, ferric chloride solution, alkaline etching solution, and hydrogen peroxide-based etching solution.
エッチング処理又はめっき処理の後、基板上のレジストパターンは除去してもよい。レジストパターンの除去は、例えば、上記現像工程に用いたアルカリ性水溶液よりも更に強アルカリ性の水溶液により剥離することができる。強アルカリ性の水溶液としては、例えば、1~10質量%水酸化ナトリウム水溶液、1~10質量%水酸化カリウム水溶液等が用いられる。レジストパターンの除去は、強アルカリ水溶液を用いて、45~65℃で行ってもよい。 After the etching or plating process, the resist pattern on the substrate may be removed. The resist pattern may be removed, for example, by using an aqueous solution that is more strongly alkaline than the aqueous solution used in the development process. Examples of the strongly alkaline aqueous solution include an aqueous solution of 1 to 10% by mass of sodium hydroxide and an aqueous solution of 1 to 10% by mass of potassium hydroxide. The resist pattern may be removed using a strong aqueous solution at 45 to 65°C.
めっき処理を施してからレジストパターンを除去した場合、更にエッチング処理によってレジストで被覆されていた導体層をエッチングし、導体パターンを形成することで所望のプリント配線板を製造することができる。この際のエッチング処理の方法は、除去すべき導体層に応じて適宜選択される。例えば、上述のエッチング液を適用することができる。 When the resist pattern is removed after plating, the conductor layer covered with the resist is etched by etching to form a conductor pattern, thereby manufacturing the desired printed wiring board. The method of etching is appropriately selected depending on the conductor layer to be removed. For example, the above-mentioned etching solution can be used.
本実施形態に係る配線パターンの形成方法は、単層プリント配線板のみならず、多層プリント配線板の製造にも適用可能であり、また小径スルーホールを有するプリント配線板等の製造にも適用可能である。 The method for forming a wiring pattern according to this embodiment can be applied to the manufacture of not only single-layer printed wiring boards, but also multi-layer printed wiring boards, and can also be applied to the manufacture of printed wiring boards with small-diameter through holes.
以下に、本発明を実施例に基づいて具体的に説明するが、本発明はこれに限定されるものではない。 The present invention will be described in detail below with reference to examples, but the present invention is not limited thereto.
(1)メタクリル酸トリチル(MA-Tr)
攪拌機、窒素導入管、還流冷却管を備えた1000mL三口フラスコへ石油エーテル150mL、トリフェニルメチル0.10mol、メタクリル酸0.11mol、トリエチルアミン0.10molを投入し、室温で6時間反応を行った。反応液から生成物として生成するトリエチルアミン塩酸塩を除去した後、反応液に3質量%炭酸ナトリウム水溶液100mLを加えて3回洗浄した。洗浄後の反応液を硫酸マグネシウムで乾燥した後、真空乾燥で溶媒を除去してMA-Trを得た。収率は90%であった。
(1) Trityl methacrylate (MA-Tr)
150 mL of petroleum ether, 0.10 mol of triphenylmethyl, 0.11 mol of methacrylic acid, and 0.10 mol of triethylamine were added to a 1000 mL three-neck flask equipped with a stirrer, a nitrogen inlet tube, and a reflux condenser tube, and the reaction was carried out at room temperature for 6 hours. After removing triethylamine hydrochloride produced as a product from the reaction solution, the reaction solution was washed three times by adding 100 mL of a 3% by mass aqueous solution of sodium carbonate. After drying the reaction solution after washing with magnesium sulfate, the solvent was removed by vacuum drying to obtain MA-Tr. The yield was 90%.
(2)tert-ブチルジメチルシリルメタクリル酸(MA-TBDMS)
攪拌機、窒素導入管、還流冷却管を備えた500mL三口フラスコへジクロロメタン150mL、メタクリル酸0.20mol、トリエチルアミン0.22molを投入し10分攪拌し、次にtert-ブチルジメチルシリルクロライド0.21mmolをフラスコ内に滴下し、室温で24時間反応を行った。反応液を3%塩酸水溶液で2回洗浄した後、純水で3回洗浄した。洗浄後の反応液を硫酸マグネシウムで乾燥した後、真空乾燥で溶媒を除去してMA-TBDMSを得た。収率は98%であった。
(2) tert-Butyldimethylsilyl methacrylate (MA-TBDMS)
150 mL of dichloromethane, 0.20 mol of methacrylic acid, and 0.22 mol of triethylamine were added to a 500 mL three-neck flask equipped with a stirrer, a nitrogen inlet tube, and a reflux condenser, and the mixture was stirred for 10 minutes. Then, 0.21 mmol of tert-butyldimethylsilyl chloride was added dropwise to the flask, and the reaction was carried out at room temperature for 24 hours. The reaction solution was washed twice with a 3% aqueous hydrochloric acid solution, and then washed three times with pure water. After the reaction solution was washed, it was dried over magnesium sulfate, and the solvent was removed by vacuum drying to obtain MA-TBDMS. The yield was 98%.
(3)トリエチルシリルメタクリル酸(MA-TES)
攪拌機、窒素導入管、還流冷却管を備えた500mL三口フラスコへジクロロメタン150mL、メタクリル酸0.20mol、トリエチルアミン0.22molを投入し10分攪拌し、次にトリエチルシリルクロライド0.21mmolをフラスコ内に滴下し、室温で24時間反応を行った。反応液を3%塩酸水溶液で2回洗浄した後、純水で3回洗浄した。洗浄後の反応液を硫酸マグネシウムで乾燥した後、真空乾燥で溶媒を除去してMA-TESを得た。収率は90%であった。
(3) Triethylsilyl methacrylate (MA-TES)
150 mL of dichloromethane, 0.20 mol of methacrylic acid, and 0.22 mol of triethylamine were added to a 500 mL three-neck flask equipped with a stirrer, a nitrogen inlet tube, and a reflux condenser, and the mixture was stirred for 10 minutes. Next, 0.21 mmol of triethylsilyl chloride was added dropwise to the flask, and the reaction was carried out at room temperature for 24 hours. The reaction solution was washed twice with a 3% aqueous hydrochloric acid solution, and then washed three times with pure water. After the reaction solution was washed, it was dried over magnesium sulfate, and the solvent was removed by vacuum drying to obtain MA-TES. The yield was 90%.
(4)アルカリ可溶性樹脂
(実施例1)
攪拌機、窒素導入管、還流冷却管、滴下漏斗及び温度計を備えた1000mL三口フラスコに、プロピレングリコールモノメチルエーテル(MFG)96g及びトルエン64gを投入し、窒素雰囲気下で80℃まで昇温した。フラスコ内に、メタクリル酸(MA)20g、スチレン(STC)30g、ベンジルメタクリレート(BzMA)40g、メタクリル酸トリメチルシリル(MA-TMS)10g、及びアゾビスイソブチロニトリル(AIBN)1gの混合物を3時間かけて滴下した後、MFG6g、トルエン4g、及びAIBN0.20gの混合物を2時間かけて滴下し、更にMFG6g及びトルエン4gを滴下して反応を行った。反応液を95℃まで昇温して1.5時間攪拌した後、室温まで冷却し、アルカリ可溶性樹脂(A1)のポリマ溶液を得た。ポリマ溶液の不揮発分(固形分)は40質量%であった。
(4) Alkali-soluble resin (Example 1)
A 1000 mL three-neck flask equipped with a stirrer, a nitrogen inlet tube, a reflux condenser, a dropping funnel and a thermometer was charged with 96 g of propylene glycol monomethyl ether (MFG) and 64 g of toluene, and the temperature was raised to 80 ° C. under a nitrogen atmosphere. A mixture of 20 g of methacrylic acid (MA), 30 g of styrene (STC), 40 g of benzyl methacrylate (BzMA), 10 g of trimethylsilyl methacrylate (MA-TMS), and 1 g of azobisisobutyronitrile (AIBN) was dropped into the flask over 3 hours, and then a mixture of 6 g of MFG, 4 g of toluene, and 0.20 g of AIBN was dropped over 2 hours, and further 6 g of MFG and 4 g of toluene were dropped to carry out the reaction. The reaction liquid was heated to 95 ° C. and stirred for 1.5 hours, and then cooled to room temperature to obtain a polymer solution of alkali-soluble resin (A1). The non-volatile content (solid content) of the polymer solution was 40% by mass.
(実施例2~4)
MA、STC、BzMA、及びMA-TMSを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(A2)~(A4)のポリマ溶液を得た。
(Examples 2 to 4)
Polymer solutions of alkali-soluble resins (A2) to (A4) were obtained in the same manner as in Example 1, except that MA, STC, BzMA, and MA-TMS were used in the amounts shown in Table 1.
(実施例5~8)
MA、STC、BzMA、及びMA-Trを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(A5)~(A8)のポリマ溶液を得た。
(Examples 5 to 8)
Polymer solutions of alkali-soluble resins (A5) to (A8) were obtained in the same manner as in Example 1, except that MA, STC, BzMA, and MA-Tr were used in the amounts shown in Table 1.
(実施例9)
MA、STC、BzMA、及びメタクリル酸2-(トリメチルシリルオキシ)エチル(HEMA-TMS)を表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(A9)のポリマ溶液を得た。
Example 9
A polymer solution of an alkali-soluble resin (A9) was obtained in the same manner as in Example 1, except that MA, STC, BzMA, and 2-(trimethylsilyloxy)ethyl methacrylate (HEMA-TMS) were used in the amounts shown in Table 1.
(実施例10~12)
MA、メタクリル酸メチル(MMA)、STC、BzMA、及びHEMA-TMSを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(A10)~(A12)のポリマ溶液を得た。
(Examples 10 to 12)
Polymer solutions of alkali-soluble resins (A10) to (A12) were obtained in the same manner as in Example 1, except that MA, methyl methacrylate (MMA), STC, BzMA, and HEMA-TMS were used in the amounts shown in Table 1.
(実施例13)
MA、STC、BzMA、及びMA-TBDMSを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(A13)のポリマ溶液を得た。
(Example 13)
A polymer solution of an alkali-soluble resin (A13) was obtained in the same manner as in Example 1, except that MA, STC, BzMA, and MA-TBDMS were used in the amounts shown in Table 1.
(実施例14)
MA、STC、BzMA、及びMA-TESを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(A14)のポリマ溶液を得た。
(Example 14)
A polymer solution of an alkali-soluble resin (A14) was obtained in the same manner as in Example 1, except that MA, STC, BzMA, and MA-TES were used in the amounts shown in Table 1.
(比較例1)
MA、STC、及びBzMAを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(B1)のポリマ溶液を得た。
(Comparative Example 1)
A polymer solution of an alkali-soluble resin (B1) was obtained in the same manner as in Example 1, except that MA, STC, and BzMA were used in the amounts shown in Table 1.
(比較例2~3)
MA、MMA、STC、及びBzMAを表1に示す配合量で用いた以外は、実施例1と同様にして、アルカリ可溶性樹脂(B2)~(B3)のポリマ溶液を得た。
(Comparative Examples 2 to 3)
Polymer solutions of alkali-soluble resins (B2) and (B3) were obtained in the same manner as in Example 1, except that MA, MMA, STC, and BzMA were used in the amounts shown in Table 1.
(重量平均分子量)
ポリマ溶液を120mg採取し、5mLのTHFに溶解して、Mw測定用の試料を調製した。Mwは、ゲルパーミエーションクロマトグラフィー法(GPC)によって測定し、標準ポリスチレンの検量線を用いて換算することにより導出した。GPCの条件を以下に示す。
(Weight average molecular weight)
120 mg of the polymer solution was taken and dissolved in 5 mL of THF to prepare a sample for Mw measurement. Mw was measured by gel permeation chromatography (GPC) and calculated using a calibration curve of standard polystyrene. The GPC conditions are shown below.
(GPC条件)
ポンプ:日立 L-6000型(株式会社日立製作所製)
カラム:Gelpack GL-R420、Gelpack GL-R430及びGelpack GL-R440(日立化成株式会社製、カラム仕様:10.7mmφ×300mm)
溶離液:テトラヒドロフラン(THF)
測定温度:40℃
注入量:200μL
圧力:49Kgf/cm2(4.8MPa)
流量:2.05mL/分
検出器:日立 L-3300型RI(株式会社日立製作所製)
(GPC conditions)
Pump: Hitachi L-6000 type (manufactured by Hitachi, Ltd.)
Columns: Gelpack GL-R420, Gelpack GL-R430, and Gelpack GL-R440 (manufactured by Hitachi Chemical Co., Ltd., column specifications: 10.7 mmφ×300 mm)
Eluent: tetrahydrofuran (THF)
Measurement temperature: 40°C
Injection volume: 200 μL
Pressure: 49 kgf/ cm2 (4.8 MPa)
Flow rate: 2.05 mL/min. Detector: Hitachi L-3300 RI (manufactured by Hitachi, Ltd.)
(5)感光性樹脂組成物
上記ポリマ溶液140質量部(アルカリ可溶性樹脂:56質量部)に対して、表2に示す配合量(質量部)の各成分を混合することにより、感光性樹脂組成物を調製した。
(5) Photosensitive Resin Composition A photosensitive resin composition was prepared by mixing each component in the blending amount (parts by mass) shown in Table 2 with 140 parts by mass of the above polymer solution (alkali-soluble resin: 56 parts by mass).
表2に示す各成分の詳細は、以下のとおりである。
(光重合性化合物)
FA-321M(商品名):2,2-ビス(4-(メタクリロキシペンタエトキシ)フェニル)プロパン(日立化成株式会社製)
FA-023M(商品名):ポリアルキレングリコールジ(メタ)アクリレート(日立化成株式会社製)
FA-MECH(商品名):(2-ヒドロキシ-3-クロロ)プロピル-2-メタクリロイルオキシエチルフタレート(日立化成株式会社製)
(光重合開始剤)
BCIM(商品名):2,2’-ビス(2-クロロフェニル)-4,4’,5,5’-テトラフェニルビイミダゾール(Hampford社製)
(増感剤)
DBA(商品名):9,10-ジブトキシアントラセン(川崎化成工業株式会社)
(光発色剤)
LCV:ロイコクリスタルバイオレット(山田化学工業株式会社)
(密着付与剤)
SF-808H:カルボキシベンゾトリアゾール、5-アミノ-1H-テトラゾール及びメトキシプロパノールの混合物(サンワ化成株式会社)
(染料)
MKG:マラカイトグリーン(大阪有機化学工業株式会社)
Details of each component shown in Table 2 are as follows.
(Photopolymerizable Compound)
FA-321M (product name): 2,2-bis(4-(methacryloxypentaethoxy)phenyl)propane (manufactured by Hitachi Chemical Co., Ltd.)
FA-023M (product name): Polyalkylene glycol di(meth)acrylate (manufactured by Hitachi Chemical Co., Ltd.)
FA-MECH (trade name): (2-hydroxy-3-chloro)propyl-2-methacryloyloxyethyl phthalate (manufactured by Hitachi Chemical Co., Ltd.)
(Photopolymerization initiator)
BCIM (trade name): 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole (manufactured by Hampford)
(Sensitizer)
DBA (product name): 9,10-dibutoxyanthracene (Kawasaki Chemical Industries, Ltd.)
(Photochromic Agent)
LCV: Leuco Crystal Violet (Yamada Chemical Industry Co., Ltd.)
(Adhesion imparting agent)
SF-808H: A mixture of carboxybenzotriazole, 5-amino-1H-tetrazole and methoxypropanol (Sanwa Chemical Co., Ltd.)
(dye)
MKG: Malachite Green (Osaka Organic Chemical Industry Ltd.)
(6)感光性エレメント
感光性樹脂組成物を、厚み16μmのポリエチレンテレフタレート(PET)フィルム(帝人フィルムソリューション株式会社、商品名「G2J」)(支持体)上に塗布し、75℃及び125℃の熱風対流式乾燥器で順次乾燥して、乾燥後の厚みが25μmの感光層を形成した。この感光層上にポリプロピレンフィルム(タマポリ株式会社、製品名「NF-13」)(保護層)を貼り合わせ、支持体と、感光層と、保護層とがこの順に積層された感光性エレメントをそれぞれ得た。
(6) Photosensitive element The photosensitive resin composition was applied onto a 16 μm-thick polyethylene terephthalate (PET) film (Teijin Film Solutions Limited, product name "G2J") (support), and dried in succession in hot air convection dryers at 75° C. and 125° C. to form a photosensitive layer having a thickness of 25 μm after drying. A polypropylene film (Tamapoly Corporation, product name "NF-13") (protective layer) was laminated onto this photosensitive layer, to obtain a photosensitive element in which the support, photosensitive layer, and protective layer were laminated in this order.
[評価]
(親水性度)
20mLのガラスボトルへモノマ7gを投入した後、イオン交換水を加えて23℃で12時間静置した後、モノマのみをシリンジで回収しカールフィッシャー法にてモノマに含まれる水分量を求めた。モノマに含まれる水分量(質量%)をモノマの親水性度とした。各モノマの親水性度を表3に示す。
[evaluation]
(Hydrophilicity)
After 7 g of monomer was put into a 20 mL glass bottle, ion-exchanged water was added and the bottle was left to stand at 23° C. for 12 hours, and then only the monomer was collected with a syringe and the amount of water contained in the monomer was determined by the Karl Fischer method. The amount of water (mass%) contained in the monomer was taken as the hydrophilicity of the monomer. The hydrophilicity of each monomer is shown in Table 3.
上記モノマの親水性度とモノマの共重合比とからアルカリ可溶性樹脂の初期の親水性度、極性変換後の親水性度、及び親水性度の増加率を算出した。実施例のアルカリ可溶性樹脂の親水性度を表4に、比較例のアルカリ可溶性樹脂の親水性度を表5に示す。 The initial hydrophilicity of the alkali-soluble resin, the hydrophilicity after polarity conversion, and the rate of increase in hydrophilicity were calculated from the hydrophilicity of the monomers and the copolymerization ratio of the monomers. The hydrophilicity of the alkali-soluble resins of the examples is shown in Table 4, and the hydrophilicity of the alkali-soluble resins of the comparative examples is shown in Table 5.
(積層体)
銅箔(厚み:35μm)をガラス繊維強化エポキシ樹脂層の両面に積層した銅張積層板(日立化成株式会社製、商品名「MCL-E-67」)を水洗、酸洗及び水洗後、空気流で乾燥した。次いで、銅張積層板を80℃に加温し、感光性エレメントを銅張積層板の銅表面に積層した。積層は、110℃のヒートロールを用いて、保護層を除去しながら、基板の0.4MPaの圧着圧力、1.0m/分のロール速度で行った。こうして、銅張積層板と感光層と支持体とがこの順に積層された積層体を得た。
(Laminate)
A copper-clad laminate (manufactured by Hitachi Chemical Co., Ltd., product name "MCL-E-67") in which copper foil (thickness: 35 μm) was laminated on both sides of a glass fiber reinforced epoxy resin layer was washed with water, pickled, and washed with water, and then dried with an air flow. The copper-clad laminate was then heated to 80° C., and a photosensitive element was laminated on the copper surface of the copper-clad laminate. The lamination was performed using a heat roll at 110° C., with a pressure of 0.4 MPa for the substrate and a roll speed of 1.0 m/min, while removing the protective layer. In this way, a laminate in which the copper-clad laminate, the photosensitive layer, and the support were laminated in this order was obtained.
(現像性)
基板上に膜厚25μmの感光層を積層した後、30℃の1質量%炭酸ナトリウム水溶液で感光層の現像を行い、残膜がゼロとなる現像時間を測定した。現像時間が20秒以下の場合を「A」、20秒未満の場合を「B」と評価した。
(Developability)
After laminating a photosensitive layer with a thickness of 25 μm on a substrate, the photosensitive layer was developed with a 1% by mass aqueous solution of sodium carbonate at 30° C., and the development time until the residual film became zero was measured. A development time of 20 seconds or less was evaluated as “A”, and a development time of less than 20 seconds was evaluated as “B”.
(解像性)
積層体の支持体上に、解像度評価用ネガとしてガラスクロムタイプのフォトツール(解像度ネガ:ライン幅/スペース幅がx/x(x:1~30、単位:μm)の配線パターンを有するもの)を使用し、日立41段ステップタブレットの現像後の残存ステップ段数が17.0となるエネルギー量で露光を行った。露光後、光感度の評価と同様に、感光層の現像処理を行った。
(Resolution)
A glass chrome type phototool (resolution negative: having a wiring pattern with a line width/space width of x/x (x: 1 to 30, unit: μm)) was used as a negative for evaluating resolution on the support of the laminate, and exposure was performed with an energy amount that resulted in a remaining step number of 17.0 after development on a Hitachi 41-step step tablet. After exposure, the photosensitive layer was developed in the same manner as in the evaluation of photosensitivity.
現像処理後、スペース部分(未露光部分)がきれいに除去され、かつライン部分(露光部分)が蛇行又は欠けを生じることなく形成されたレジストパターンのうち、最も小さいスペース幅の値により、解像性を評価した。最も小さいスペース幅が、15μm未満の場合を「A」、15~20μmの場合を「B」、20μm超の場合を「C」と評価した。 After development, the space areas (unexposed areas) were completely removed, and the line areas (exposed areas) were formed without meandering or chipping. Among the resist patterns, the resolution was evaluated based on the smallest space width. If the smallest space width was less than 15 μm, it was rated as "A", if it was 15 to 20 μm, it was rated as "B", and if it was more than 20 μm, it was rated as "C".
(剥離特性)
基板上に膜厚25μmの感光層を積層した積層体を、直描露光機を用いて405nmで30mJを照射した後、30℃の1質量%炭酸ナトリウム水溶液を最小現像時間(未露光部分が除去される最短時間)の2倍の時間でスプレー現像を行い、未露光部分を除去した(現像処理)。現像処理後、基板上に40mm×50mmの硬化膜が形成された試験片を得た。試験片を50℃の3質量%水酸化ナトリウム水溶液に浸漬し、硬化膜が基板より剥離するまでの時間を測定した。剥離時間が50秒未満の場合を「A」、50秒以上60秒未満の場合を「B」、60秒以上を「C」とした。
(Peeling properties)
A laminate in which a photosensitive layer having a thickness of 25 μm was laminated on a substrate was irradiated with 30 mJ at 405 nm using a direct imaging exposure machine, and then a 1% by mass aqueous solution of sodium carbonate at 30° C. was spray-developed for twice the minimum development time (the shortest time required for the unexposed portion to be removed) to remove the unexposed portion (development treatment). After the development treatment, a test piece was obtained in which a 40 mm×50 mm cured film was formed on the substrate. The test piece was immersed in a 3% by mass aqueous solution of sodium hydroxide at 50° C., and the time until the cured film peeled off from the substrate was measured. The peeling time was rated as “A” when it was less than 50 seconds, “B” when it was 50 seconds or more but less than 60 seconds, and “C” when it was 60 seconds or more.
以上の結果より、極性変換基を有する構造単位を含むアルカリ可溶性樹脂を含有する感光性樹脂組成物は、現像性、解像性及び剥離性を両立できることが確認できる。 These results confirm that a photosensitive resin composition containing an alkali-soluble resin that includes a structural unit having a polarity conversion group can achieve both developability, resolution, and peelability.
1…感光性エレメント、2…支持体、3…感光層、4…保護層。 1...photosensitive element, 2...support, 3...photosensitive layer, 4...protective layer.
Claims (8)
前記極性変換基が、弱アルカリ条件下で脱離せず、強アルカリ条件下で脱離する基を有し、下記式(1)で表される基である、アルカリ可溶性樹脂(但し、(a)テルペノイド骨格または脂環式骨格および(b)置換または非置換のシリル基の構造を含む重合体を除く。)。
[式(1)中、R2は、トリメチルシリル基、トリエチルシリル基、tert-ブチルジメチルシリル基又はトリチル基を示す。] The polymer contains a structural unit having a polarity conversion group, a structural unit having a carboxy group, and a structural unit based on a benzyl (meth)acrylate ester,
An alkali-soluble resin, wherein the polarity conversion group has a group that does not leave under weak alkaline conditions but leaves under strong alkaline conditions, and is a group represented by the following formula (1) (excluding polymers having (a) a terpenoid skeleton or an alicyclic skeleton and (b) a substituted or unsubstituted silyl group structure):
[In formula (1), R2 represents a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, or a trityl group.]
[式(2)中、R1は水素原子又はメチル基を示し、L1は炭素数1~6のアルキレン基を示し、R2は、トリメチルシリル基、トリエチルシリル基、tert-ブチルジメチルシリル基又はトリチル基を示す。] 2. The alkali-soluble resin according to claim 1, wherein the structural unit having a polarity conversion group is a structural unit based on a compound represented by the following formula (2):
[In formula (2), R 1 represents a hydrogen atom or a methyl group, L 1 represents an alkylene group having 1 to 6 carbon atoms, and R 2 represents a trimethylsilyl group, a triethylsilyl group, a tert-butyldimethylsilyl group, or a trityl group.]
前記感光層が、請求項4に記載の感光性樹脂組成物を含む、感光性エレメント。 A support and a photosensitive layer formed on the support,
A photosensitive element, wherein the photosensitive layer comprises the photosensitive resin composition of claim 4 .
前記感光層の少なくとも一部に活性光線を照射して、光硬化部を形成する工程と、
前記基板から、前記感光層の前記光硬化部以外の少なくとも一部を除去してレジストパターンを形成する工程と、
を備える、レジストパターンの形成方法。 forming a photosensitive layer on a substrate using the photosensitive resin composition according to claim 4 or the photosensitive element according to claim 5;
a step of irradiating at least a portion of the photosensitive layer with active light rays to form a photocured portion;
removing at least a portion of the photosensitive layer other than the photocured portion from the substrate to form a resist pattern;
A method for forming a resist pattern comprising:
8. The method for forming a wiring pattern according to claim 7, further comprising the step of removing the photocured portion with an alkaline aqueous solution after the etching treatment or the plating treatment.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/126633 WO2021120106A1 (en) | 2019-12-19 | 2019-12-19 | Alkali-soluble resin, photosensitive resin composition, photosensitive element, method of forming resist pattern, and method of forming wiring pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023507101A JP2023507101A (en) | 2023-02-21 |
JP7507862B2 true JP7507862B2 (en) | 2024-06-28 |
Family
ID=76477067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022535935A Active JP7507862B2 (en) | 2019-12-19 | 2019-12-19 | Alkali-soluble resin, photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for forming wiring pattern |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7507862B2 (en) |
CN (1) | CN115087929A (en) |
WO (1) | WO2021120106A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116478328B (en) * | 2023-04-20 | 2025-01-24 | 厦门恒坤新材料科技股份有限公司 | Silicon-containing polymer and bottom anti-reflective coating composition and preparation method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017050043A (en) | 2015-08-31 | 2017-03-09 | 三菱製紙株式会社 | Conductive pattern precursor and method for producing conductive pattern |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3720970B2 (en) * | 1998-01-13 | 2005-11-30 | 株式会社東芝 | Photosensitive composition, pattern forming method using the same, and method for manufacturing semiconductor device |
JP4214385B2 (en) * | 2003-04-02 | 2009-01-28 | 日産化学工業株式会社 | Anti-reflective film forming composition containing polymer having silicon atom in side chain |
CN102875745B (en) * | 2011-07-14 | 2014-07-09 | 京东方科技集团股份有限公司 | Alkali soluble resin, photosensitive resin composition containing it and application thereof |
WO2014003023A1 (en) * | 2012-06-29 | 2014-01-03 | Jsr株式会社 | Composition for pattern formation and pattern forming method |
JP6432170B2 (en) * | 2014-06-09 | 2018-12-05 | 信越化学工業株式会社 | Chemically amplified positive resist material and pattern forming method |
JP2017181798A (en) * | 2016-03-30 | 2017-10-05 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Low temperature curable negative type photosensitive composition |
JP2020095068A (en) * | 2017-03-31 | 2020-06-18 | 富士フイルム株式会社 | Pattern forming method and method for manufacturing electronic device |
-
2019
- 2019-12-19 JP JP2022535935A patent/JP7507862B2/en active Active
- 2019-12-19 WO PCT/CN2019/126633 patent/WO2021120106A1/en active Application Filing
- 2019-12-19 CN CN201980103561.5A patent/CN115087929A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017050043A (en) | 2015-08-31 | 2017-03-09 | 三菱製紙株式会社 | Conductive pattern precursor and method for producing conductive pattern |
Also Published As
Publication number | Publication date |
---|---|
CN115087929A (en) | 2022-09-20 |
JP2023507101A (en) | 2023-02-21 |
WO2021120106A1 (en) | 2021-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9989854B2 (en) | Photosensitive resin composition for projection exposure, photosensitive element, method for forming resist pattern, process for producing printed wiring board and process for producing lead frame | |
JP5327310B2 (en) | Photosensitive resin composition, photosensitive element using the same, resist pattern forming method, and printed wiring board manufacturing method | |
JP5626428B2 (en) | Photosensitive resin composition, photosensitive element using the same, resist pattern forming method, and printed wiring board manufacturing method | |
JP2025010318A (en) | Photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board | |
JP6690532B2 (en) | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing printed wiring board | |
JP5793924B2 (en) | Photosensitive resin composition, photosensitive element, method for producing resist pattern, and method for producing printed wiring board | |
CN103064254A (en) | Photosensitive resin compound, photosensitive component, formation method of resist pattern, and manufacturing method of printed circuit board | |
JP7507862B2 (en) | Alkali-soluble resin, photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for forming wiring pattern | |
JP2024008940A (en) | Photosensitive resin composition, photosensitive element, formation method of resist pattern, and manufacturing method of printed wiring board | |
JP5532551B2 (en) | Photosensitive resin composition, photosensitive element, resist pattern forming method and printed wiring board manufacturing method | |
JP7590977B2 (en) | Photosensitive resin film, method for forming resist pattern, and method for forming wiring pattern | |
JP7327485B2 (en) | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing printed wiring board | |
WO2022201432A1 (en) | Photosensitive resin film, resist pattern forming method, and method for forming wiring pattern | |
WO2024116513A1 (en) | Photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board | |
US20240392048A1 (en) | Polymer, photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for forming wiring pattern | |
WO2024176541A1 (en) | Photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board | |
WO2022264275A1 (en) | Photosensitive element and method for producing photosensitive element | |
JP7631907B2 (en) | Method for producing photosensitive resin film, photosensitive element, and laminate | |
WO2024142486A1 (en) | Photosensitive element and method for producing circuit board | |
WO2024210041A1 (en) | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing circuit board | |
JP2013122488A (en) | Photosensitive resin composition, and photosensitive element, method for forming resist pattern and method for manufacturing printed wiring board using the composition | |
JP2011170162A (en) | Photosensitive element, method for forming resist pattern using the same, and method for manufacturing printed wiring board |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221014 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230727 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230801 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240409 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240611 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240618 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7507862 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |