JP7110537B2 - 光吸収層用前駆体、これを用いた有機-無機複合太陽電池の製造方法および有機-無機複合太陽電池 - Google Patents
光吸収層用前駆体、これを用いた有機-無機複合太陽電池の製造方法および有機-無機複合太陽電池 Download PDFInfo
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
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- 229930195733 hydrocarbon Natural products 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 230000002209 hydrophobic effect Effects 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical group I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
前記ペロブスカイト前駆体対比0.005wt%~0.5wt%のフッ素系有機化合物を含むものである光吸収層用前駆体を提供する。
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に前記光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップとを含む有機-無機複合太陽電池の製造方法を提供する。
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機-無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%~5wt%含まれるものである有機-無機複合太陽電池を提供する。
20:第1共通層
30:光吸収層
40:第2共通層
50:第2電極
R1X1
R2aR3(1-a)X2eX3(1-e)
前記化学式1~3において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
X1~X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
eは、0<e<1の実数であり、
e'は、0<e'<1の実数である。
M1X62
X6は、ハロゲンイオンである。
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に前記光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップとを含む有機-無機複合太陽電池の製造方法を提供する。
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機-無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%~5wt%含まれるものである有機-無機複合太陽電池を提供する。
R1M1X13
R2aR3(1-a)M2X2zX3(3-z)
R4bR5cR6dM3X4z'X5(3-z')
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1~M3は、互いに同一または異なり、それぞれ独立して、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1~X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。
Claims (7)
- ペロブスカイト前駆体;および
前記ペロブスカイト前駆体対比0.005wt%~0.5wt%のフッ素系界面活性剤
を含み、
前記フッ素系界面活性剤の主鎖は、パーフルオロアルキル基を含むものである、
光吸収層用前駆体。 - 前記ペロブスカイト前駆体は、有機ハロゲン化物および金属ハロゲン化物を含むものである、
請求項1に記載の光吸収層用前駆体。 - 前記有機ハロゲン化物は、下記化学式1~3のうちのいずれか1つで表されるものである、
請求項2に記載の光吸収層用前駆体:
[化学式1]
R1X1
[化学式2]
R2aR3(1-a)X2eX3(1-e)
[化学式3]
R4bR5cR6dX4e'X5(1-e')
前記化学式1~3において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
X1は、ハロゲンイオンであり、
X2およびX3は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
X4およびX5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
eは、0<e<1の実数であり、
e'は、0<e'<1の実数である。 - 前記金属ハロゲン化物は、下記化学式4で表されるものである、
請求項2に記載の光吸収層用前駆体:
[化学式4]
M1X62
前記化学式4において、
M1は、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X6は、ハロゲンイオンである。 - 第1電極を用意するステップと、
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に請求項1~4のいずれか1項に記載の光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップと
を含む
有機-無機複合太陽電池の製造方法。 - 第1電極と、
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機-無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系界面活性剤を含み、
前記フッ素系界面活性剤は、光吸収層の質量対比0.005wt%~0.5wt%含まれ、
前記フッ素系界面活性剤の主鎖は、パーフルオロアルキル基を含むものである、
有機-無機複合太陽電池。 - 前記ペロブスカイト構造の化合物は、下記化学式5~7のうちのいずれか1つで表されるものである、
請求項6に記載の有機-無機複合太陽電池:
[化学式5]
R1M1X13
[化学式6]
R2aR3(1-a)M2X2zX3(3-z)
[化学式7]
R4bR5cR6dM3X4z'X5(3-z')
前記化学式5~7において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1~M3は、それぞれ、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1は、ハロゲンイオンであり、
X2およびX3は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
X4およびX5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。
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