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JP7109989B2 - 基板処理方法、記憶媒体及び基板処理システム - Google Patents

基板処理方法、記憶媒体及び基板処理システム Download PDF

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Publication number
JP7109989B2
JP7109989B2 JP2018094906A JP2018094906A JP7109989B2 JP 7109989 B2 JP7109989 B2 JP 7109989B2 JP 2018094906 A JP2018094906 A JP 2018094906A JP 2018094906 A JP2018094906 A JP 2018094906A JP 7109989 B2 JP7109989 B2 JP 7109989B2
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Japan
Prior art keywords
processing
substrate
liquid
wafer
ipa
Prior art date
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JP2018094906A
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English (en)
Japanese (ja)
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JP2019033246A5 (ko
JP2019033246A (ja
Inventor
憲人 束野
源太郎 五師
拓朗 増住
浩巳 清瀬
祥吾 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW107126989A priority Critical patent/TWI800521B/zh
Priority to US16/058,032 priority patent/US11133176B2/en
Priority to KR1020180092360A priority patent/KR102581314B1/ko
Priority to CN201810902225.4A priority patent/CN109390254B/zh
Publication of JP2019033246A publication Critical patent/JP2019033246A/ja
Publication of JP2019033246A5 publication Critical patent/JP2019033246A5/ja
Application granted granted Critical
Publication of JP7109989B2 publication Critical patent/JP7109989B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2018094906A 2017-08-09 2018-05-16 基板処理方法、記憶媒体及び基板処理システム Active JP7109989B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW107126989A TWI800521B (zh) 2017-08-09 2018-08-03 基板處理方法、記憶媒體及基板處理系統
US16/058,032 US11133176B2 (en) 2017-08-09 2018-08-08 Substrate processing method, recording medium and substrate processing system
KR1020180092360A KR102581314B1 (ko) 2017-08-09 2018-08-08 기판 처리 방법, 기억 매체 및 기판 처리 시스템
CN201810902225.4A CN109390254B (zh) 2017-08-09 2018-08-09 基片处理方法、存储介质和基片处理系统

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017154574 2017-08-09
JP2017154574 2017-08-09

Publications (3)

Publication Number Publication Date
JP2019033246A JP2019033246A (ja) 2019-02-28
JP2019033246A5 JP2019033246A5 (ko) 2021-04-15
JP7109989B2 true JP7109989B2 (ja) 2022-08-01

Family

ID=65523663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018094906A Active JP7109989B2 (ja) 2017-08-09 2018-05-16 基板処理方法、記憶媒体及び基板処理システム

Country Status (3)

Country Link
JP (1) JP7109989B2 (ko)
KR (1) KR102581314B1 (ko)
TW (1) TWI800521B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7236338B2 (ja) 2019-06-28 2023-03-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2023013682A (ja) 2021-07-16 2023-01-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TW202345223A (zh) 2022-03-10 2023-11-16 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JP7318066B1 (ja) 2022-05-26 2023-07-31 セメス カンパニー，リミテッド 基板処理装置
JP2024082145A (ja) 2022-12-07 2024-06-19 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001307991A (ja) 2000-04-25 2001-11-02 Tokyo Electron Ltd 膜形成方法
JP2013012538A (ja) 2011-06-28 2013-01-17 Tokyo Electron Ltd 基板処理装置、基板処理方法および記憶媒体
JP2017005230A (ja) 2015-06-16 2017-01-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5426439B2 (ja) * 2010-03-15 2014-02-26 株式会社東芝 超臨界乾燥方法および超臨界乾燥装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001307991A (ja) 2000-04-25 2001-11-02 Tokyo Electron Ltd 膜形成方法
JP2013012538A (ja) 2011-06-28 2013-01-17 Tokyo Electron Ltd 基板処理装置、基板処理方法および記憶媒体
JP2017005230A (ja) 2015-06-16 2017-01-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
TW201921471A (zh) 2019-06-01
KR102581314B1 (ko) 2023-09-22
TWI800521B (zh) 2023-05-01
KR20190016919A (ko) 2019-02-19
JP2019033246A (ja) 2019-02-28

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