JP7010628B2 - Display devices and electronic devices - Google Patents

Description

One aspect of the present invention relates to a display device and an electronic device.

It should be noted that one embodiment of the present invention is not limited to the above technical fields. The technical field of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method. Alternatively, one embodiment of the invention relates to a process, machine, manufacture, or composition (composition of matter).

Therefore, as a technical field of one embodiment of the present invention disclosed more specifically in the present specification and the like, a semiconductor device, a display device, an electronic device, a driving method thereof, or a manufacturing method thereof may be given as an example. can.

A display device in which a reflection type element and a light emitting type element are combined has been proposed (Patent Document 1). By using a reflective element in a bright environment and a light emitting element in a dark environment, it is possible to provide a display device having good display quality independent of the external light environment and low power consumption.

On the other hand, a technique has been proposed in which an oxide semiconductor transistor (Oxide Semiconductor transistor, hereinafter referred to as an OS transistor) is used in a display device such as a liquid crystal display or an organic EL (electroluminescence) display. Since the off-current of the OS transistor is very small, a technique for reducing the refresh frequency when displaying a still image and reducing the power consumption of a liquid crystal display or an organic EL display is disclosed (Patent Documents 2 and 3). ). In this specification, the technique for reducing the power consumption of the above-mentioned display device is referred to as "idling stop" or "IDS drive".

Further, an example in which an OS transistor is used in a non-volatile storage device by utilizing the small off-current is disclosed (Patent Document 4).

Japanese Patent Application Laid-Open No. 2003-157026 Japanese Unexamined Patent Publication No. 2011-141522 Japanese Unexamined Patent Publication No. 2011-141524 Japanese Unexamined Patent Publication No. 2011-151383

When displaying complementary brightness by a reflection type element and a light emitting type element, it is effective to detect external light and distribute image data to each display element.

However, there is a difference in the time from writing the image data to reaching the desired luminance, that is, the response time, between the reflection type element and the light emitting type element. Therefore, when the complementary luminance display is performed by the reflection type element and the light emitting type element, there is a possibility that good display quality cannot be obtained due to the difference in response time. Further, since the light emitting element continues to consume the current during the display period, there is a risk that the power consumption will increase.

One of the objects of the present invention is to provide a new display device and an electronic device. Alternatively, one of the issues is to provide a display device or the like that can reduce power consumption. Alternatively, one of the problems of one embodiment of the present invention is to provide a display device or the like that can ensure good display quality.

It should be noted that one embodiment of the present invention does not necessarily have to solve all of the above problems, but may solve at least one problem. Moreover, the description of the above-mentioned problem does not prevent the existence of other problems. Issues other than these are self-evident from the description of the description, claims, drawings, etc., and it is possible to extract issues other than these from the description of the specification, claims, drawings, etc. It is possible.

One embodiment of the present invention comprises a reflective element, a light emitting element, a first pixel circuit having a function of driving the reflective element, and a second pixel circuit having a function of driving the light emitting element. In the first period in which the first image data written in the first pixel circuit is updated to update the transmission rate of the reflective element, the second period is shorter than the first period. It is a display device that writes the second image data in the pixel circuit of 2 and causes the light emitting element to emit light.

In one embodiment of the present invention, the second image data has a time integrated value of luminance according to the light emission time, and the time integrated value is a reflection type by writing the first image data to the first pixel circuit. A display device in which the transmittance of the element changes and is equal to the time-integrated value of the brightness according to the delay of the change is preferable.

In one embodiment of the present invention, the reflective element is preferably a display device which is a liquid crystal element having a reflective electrode.

In one embodiment of the present invention, the first image data is updated every frame period, and the updated first image data is a display device which is a signal output with the polarity reversed every frame period. Is preferable.

One embodiment of the present invention can provide novel display devices and electronic devices. Alternatively, it is possible to provide a display device or the like that can reduce power consumption. Alternatively, one embodiment of the present invention can provide a display device or the like that can ensure good display quality.

The effect of one embodiment of the present invention is not limited to the effects listed above. The effects listed above do not preclude the existence of other effects. The other effects are the effects not mentioned in this item, which are described below. Effects not mentioned in this item can be derived from the description in the specification, drawings, etc. by those skilled in the art, and can be appropriately extracted from these descriptions. It should be noted that one embodiment of the present invention has at least one of the above-listed effects and other effects. Therefore, in some cases, one embodiment of the present invention may not have the effects listed above.

A block diagram and a conceptual diagram showing a configuration example of a display device. A block diagram, a conceptual diagram, and a state transition diagram showing a configuration example of a display device. A circuit diagram and a timing chart showing a configuration example of a display device. A circuit diagram showing a configuration example of a display device. A circuit diagram and a timing chart showing a configuration example of a display device. A circuit diagram and a timing chart showing a configuration example of a display device. A block diagram showing a configuration example of a display device and a diagram illustrating an operation. A timing chart showing a configuration example of a display device. A circuit diagram showing a configuration example of a display device. A block diagram showing a configuration example of a display device. The figure which shows the configuration example of a touch sensor unit. The block diagram which shows the configuration example of a controller IC. The figure explaining the parameter. A block diagram and a circuit diagram showing a configuration example of a frame memory. A block diagram showing an example of register configuration. The figure which shows the configuration example of a register. A circuit diagram showing an example of register configuration. Timing chart. The block diagram which shows the configuration example of a controller IC. A block diagram showing a configuration example of a display unit. A circuit diagram showing a pixel configuration example. Top view showing a configuration example of a display unit and pixels. Sectional drawing which shows the structural example of a display unit. Sectional drawing which shows the structural example of a display unit. The schematic diagram explaining the shape of a reflective film. Bottom view illustrating a part of the pixels of the display unit. A block diagram showing a configuration example of a display device. A top view illustrating a display device and a schematic diagram illustrating a part of an input unit of the display device. The cross-sectional view which shows the structural example of the display device. The cross-sectional view which shows the structural example of the display device. The figure explaining the structure of the input / output panel which concerns on embodiment. The figure explaining the structure of the input / output panel which concerns on embodiment. The figure which shows the example of the display module. The figure which shows the example of the electronic device.

Hereinafter, embodiments will be described with reference to the drawings. However, it is easily understood by those skilled in the art that the embodiments can be implemented in many different embodiments, and the embodiments and details can be variously changed without departing from the spirit and scope thereof. To. Therefore, the present invention is not construed as being limited to the description of the following embodiments. In addition, the plurality of embodiments shown below can be appropriately combined.

In the present specification and the like, an oxide semiconductor may be referred to as an OS (Oxide Semiconductor). Therefore, a transistor having an oxide semiconductor in the channel forming region may be referred to as an oxide semiconductor transistor, an OS transistor, or an OSFET.

Further, in drawings and the like, the size, layer thickness, region and the like may be exaggerated for clarification. Therefore, it is not necessarily limited to that scale. The drawings schematically show an ideal example, and are not limited to the shapes or values shown in the drawings.

Further, in drawings and the like, the same elements or elements having the same function, elements of the same material, elements formed at the same time, etc. may be designated by the same reference numerals, and the repeated description thereof may be omitted. be.

Further, in the present specification and the like, the term "membrane" and the term "layer" can be interchanged with each other. For example, it may be possible to change the term "conductive layer" to the term "conductive layer". Alternatively, for example, it may be possible to change the term "insulating film" to the term "insulating layer".

Further, in the present specification and the like, the terms indicating the arrangement such as "upper" and "lower" do not limit the positional relationship of the components to be "directly above" or "directly below". For example, the expression "gate electrode on the gate insulating layer" does not exclude those containing other components between the gate insulating layer and the gate electrode.

Further, in the present specification and the like, "parallel" means a state in which two straight lines are arranged at an angle of −10 ° or more and 10 ° or less. Therefore, the case of −5 ° or more and 5 ° or less is also included. Further, "vertical" means a state in which two straight lines are arranged at an angle of 80 ° or more and 100 ° or less. Therefore, the case of 85 ° or more and 95 ° or less is also included.

Further, in the present specification and the like, the ordinal numbers such as "first", "second", and "third" are added to avoid confusion of the components, and are not limited numerically.

Further, in the present specification and the like, "electrically connected" includes the case where they are connected via "something having some kind of electrical action". Here, the "thing having some kind of electrical action" is not particularly limited as long as it enables the exchange of electric signals between the connection targets. For example, "things having some kind of electrical action" include electrodes, wirings, switching elements such as transistors, resistance elements, inductors, capacitors, and other elements having various functions.

Further, in the present specification and the like, the “voltage” often refers to a potential difference between a certain potential and a reference potential (for example, a ground potential). Therefore, the voltage, the potential, and the potential difference can be paraphrased as the potential, the voltage, and the voltage difference, respectively.

Further, in the present specification and the like, a transistor is an element having at least three terminals including a gate, a drain, and a source. A channel region is provided between the drain (drain terminal, drain region, or drain electrode) and the source (source terminal, source region, or source electrode), and a current is passed through the drain, the channel region, and the source. It can be shed. In the present specification and the like, the channel region refers to a region in which a current mainly flows.

Further, the functions of the source and the drain may be switched when transistors having different polarities are adopted or when the direction of the current changes in the circuit operation. Therefore, in the present specification and the like, the terms source and drain can be used interchangeably.

Further, in the present specification and the like, unless otherwise specified, the off current means a drain current when the transistor is in an off state (also referred to as a non-conducting state or a cutoff state). Unless otherwise specified, the off state is a state in which the voltage Vgs between the gate and the source is lower than the threshold voltage Vth in the n-channel transistor, and the voltage Vgs between the gate and the source in the p-channel transistor. Is higher than the threshold voltage Vth. That is, the off-current of the n-channel transistor may be the drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vth.

In the above description of the off-current, the drain may be read as the source. That is, the off current may refer to the current flowing through the source when the transistor is in the off state.

Further, in the present specification and the like, it may be described as a leak current in the same meaning as an off current. Further, in the present specification and the like, the off current may refer to the current flowing between the source and the drain when the transistor is in the off state.

(Embodiment 1)
In this embodiment, a hybrid display device in which a reflection type element and a light emitting type element are provided in one pixel will be described. In particular, a signal to be written to the pixels of the display device will be described. As the reflective element, a liquid crystal display, electronic paper, or the like can be applied. Hereinafter, the reflective element will be described as a reflective element 10a, and the light emitting element will be described as a light emitting element 10b.

<Display device>
FIG. 1 is a block diagram showing a configuration example of a display device. The display device 99 has a display unit 110.

<Display unit>
The display unit 110 includes a pixel array 111, a gate driver 113, a gate driver 114, and a controller IC 115.

The pixel array 111 has a plurality of pixels 10, and each pixel 10 is an active element driven by using a transistor. Further, the pixel 10 has a reflection element 10a and a light emitting element 10b. A more specific configuration example of the pixel array 111 will be described in the third embodiment.

The gate driver 113 has a function of driving a gate wire for selecting the reflection element 10a, and the gate driver 114 has a function of driving a gate wire for selecting the light emitting element 10b. A source driver for driving a source line for supplying a data signal to the reflecting element 10a and a source driver for driving a source line for supplying a data signal to the light emitting element 10b are provided in the controller IC 115, respectively. The controller IC 115 has a function of comprehensively controlling the operation of the display device 100. The number of controller IC 115 is determined according to the number of pixels of the pixel array. A signal from the optical sensor 143 is input to the controller IC 115.

Although the example of FIG. 1A shows an example in which the gate drivers 113 and 114 are integrated on the same substrate together with the pixel array 111, the gate drivers 113 and 114 can also be used as a dedicated IC. Alternatively, the gate driver 113 or the gate driver 114 may be incorporated in the controller IC 115.

Here, the mounting method of the controller IC 115 is a COG (Chip on Glass) method, but there are no particular restrictions on the mounting method, and a COF (Chip on Flexible) method, a TAB (Tape Automated Bonding) method, or the like may be used.

The transistor used for the pixel 10 is a transistor having an oxide semiconductor in a channel forming region (also referred to as an “OS transistor”), and has a lower off current than a Si transistor. The OS transistor can reduce the off-current by reducing the concentration of impurities in the oxide semiconductor and making the oxide semiconductor true or substantially true.

Alternatively, as the transistor used for the pixel 10, if the off-current is low, it can be a transistor to which an oxide semiconductor is not applied. For example, a transistor to which a semiconductor having a large band gap is applied may be applied. A semiconductor having a large bandgap is a semiconductor having a bandgap of 2.2 eV or more. For example, silicon carbide, gallium nitride, diamond and the like can be mentioned.

By using a transistor having a low off current for the pixel 10, the gate drivers 113 and 114 and the source driver can be temporarily stopped when it is not necessary to rewrite the display screen (that is, when displaying a still image) (that is, when displaying a still image). Hereinafter, it is referred to as "idling stop" or "IDS drive"). By driving the IDS, the power consumption of the display device 99 can be reduced.

<Pixel configuration>
The configuration of the pixel 10 will be described.

FIG. 1B illustrates a schematic diagram of the pixel 10. The pixel 10 includes a pixel circuit 11, a pixel circuit 12, a reflection element 10a, and a light emitting element 10b. The pixel circuit 11 is a circuit for driving the reflection element 10a. The pixel circuit 12 is a circuit for driving the light emitting element 10b. The reflective element 10a has a reflective electrode. The reflecting element 10a adjusts the intensity of the reflected light to perform display. The light emitting element 10b adjusts the amount of current to display. The details of the structure of the cross section of the pixel will be described later.

The schematic diagram of the pixel 10 shown in FIG. 1B shows the arrangement of the pixel circuit 11, the pixel circuit 12, the reflecting element 10a, and the light emitting element 10b. The reflective element 10a shown in FIG. 1B has an opening 13. The opening 13 represents an opening provided in the reflective electrode. The light emitting element 10b shown in FIG. 1B is provided so as to overlap the opening 13 of the reflecting element 10a.

The pixel circuit 11 and the pixel circuit 12 shown in FIG. 1B are provided between the layer in which the reflection element 10a is provided and the layer in which the light emitting element 10b is provided. By providing an element layer having transistors of the pixel circuit 11 for driving the reflection element 10a and the pixel circuit 12 for driving the light emitting element 10b in the same process, the pixel circuit 11 and the pixel circuit 12 are made into the same layer. It is configured to be placed. With this configuration, it is possible to make a source driver that integrates a source driver that gives image data to the reflecting element 10a and a source driver that gives image data to the light emitting element 10b. Note that FIG. 1B illustrates a configuration in which the pixel circuit 11 and the pixel circuit 12 are provided between the layer provided with the reflecting element 10a and the layer provided with the light emitting element 10b, but the pixel circuit is the reflecting element 10a and the light emitting element. It may be configured to be provided in the upper layer or the lower layer of 10b.

With the configuration shown in FIG. 1B, the pixel 10 is displayed by controlling the reflected light 14 by the reflecting element 10a and controlling the intensity of the light 15 emitted by the light emitting element 10b passing through the opening 13. Can be done. The direction in which the reflected light 14 is emitted and the direction in which the light 15 emitted by the light emitting element 10b is emitted are the display surfaces of the display device 99.

In the configuration of the pixel 10 shown in FIG. 1B, circuits for driving pixels such as the pixel circuit 11 and the pixel circuit 12 can be arranged under the reflection electrode of the reflection element 10a. Therefore, it is possible to suppress a decrease in the aperture ratio due to the increase in the pixel circuit 12 for driving the light emitting element 10b.

Further, in the configuration of the pixel 10 shown in FIG. 1 (B), the intensity of the external light reflected by the reflecting electrode included in the reflecting element 10a is adjusted by the liquid crystal layer to display the gradation. Therefore, the display device 99 having the pixel 10 of FIG. 1B can improve the visibility outdoors.

Further, in the configuration of the pixel 10 shown in FIG. 1B, the intensity of the light 15 emitted by the light emitting element 10b is adjusted to display the gradation. Therefore, the display device 99 having the pixel 10 of FIG. 1 can improve the visibility indoors where the intensity of the outside light is small.

Further, the configuration shown in FIG. 1B has a pixel circuit 11 capable of controlling the reflection element 10a for each pixel and a pixel circuit 12 capable of controlling the light emitting element 10b. That is, the display of the reflection element 10a and the light emitting element 10b can be controlled separately for each pixel 10. In such a configuration, unlike the control of the backlight that lights uniformly by a plurality of pixels, the light emission of the light emitting element 10b according to the image to be displayed can be controlled in the smallest unit such as the pixel level, which is extra. The light emission can be suppressed. Therefore, the display device 99 having the pixel 10 of FIG. 1B can reduce the power consumption.

The pixel 10 can be applied not only to the pixels of the monochrome display display device but also to the pixels of the color display display device by providing a color filter. When displaying in color, the pixel 10 corresponds to a sub-pixel when the color elements are three colors of RGB (R represents red, G represents green, and B represents blue). The number of sub-pixels constituting one pixel is not limited to three. For example, one pixel may be composed of four sub-pixels of R sub-pixel, G sub-pixel, B sub-pixel, and W (white) sub-pixel. Alternatively, as in the pentile arrangement, one color element may be configured by two colors of RGB, and two different colors may be selected and configured depending on the color element.

<Display device operation mode>
The operation mode of the display device 99 of FIG. 1 (A) will be described with reference to FIGS. 2 (A) to 2 (E).

The operation mode of the display device 99 in FIG. 1A may be switched according to the illuminance obtained by the optical sensor 143, for example. In the block diagram of FIG. 2A, the optical sensor 143 and the controller IC 115 shown in FIG. 1A are extracted and shown.

In FIG. 2A, the optical sensor 143 has, for example, a function of generating a signal _SILL according to the illuminance. The controller IC 115 has a function of switching the display mode according to the signal _SILL .

Further, FIGS. 2B to 2D are schematic views of pixels for explaining a display mode that the display device 99 can take depending on the illuminance. In addition, in FIGS. 2B to 2D, the reflection included in the pixel circuit 11, the pixel circuit 12, the reflection element 10a, the light emitting element 10b, the opening 13, and the reflection element 10a, as in FIG. 1B. The reflected light 14 reflected by the electrodes and the light 15 emitted by the light emitting element 10b emitted from the opening 13 are shown.

The display modes that the display device can take are the reflection display mode (R mode), the reflection display + emission display mode (ER mode), and the emission display mode (Emission display mode) shown in FIGS. 2 (B) to 2 (D). E mode) and will be described.

The reflection display mode is a display mode in which a reflection element of a pixel is driven to adjust the reflected light for display. Specifically, as shown in the schematic diagram of the pixel 10 shown in FIG. 2 (B), the intensity of the reflected light 14 by the reflecting electrode of the reflecting element 10a is adjusted by the liquid crystal layer for display.

The reflection display + light emission display mode (ER mode) is a display mode in which both the reflected light and the light emission of the light emitting element are adjusted and displayed by driving the reflecting element and driving the light emitting element. Specifically, as shown in the schematic diagram of the pixel 10 shown in FIG. 2C, the light 14 reflected by the reflecting electrode of the reflecting element 10a and the light 15 emitted by the light emitting element 10b from the opening 13 are adjusted for display. conduct.

The light emission display mode (Emode) is a display mode in which a light emitting element is driven to adjust light emission and display. Specifically, as shown in the schematic diagram of the pixel 10 shown in FIG. 2D, the light 15 emitted from the opening 13 by the light emitting element 10b is adjusted to display the gradation.

FIG. 2E shows a state transition diagram of the above-mentioned three modes (reflection display mode, reflection display + emission display mode, and emission display mode). The state C1 represents the reflection display mode, the state C2 represents the reflection display + light emission display mode, and the state C3 represents the light emission display mode.

The display device 99 may take a display mode of any of the states C1 to C3 depending on the illuminance. For example, when the illuminance is large such as outdoors, the state C1 can be taken. Further, when the illuminance such as moving from the outside to the inside becomes small, the state C1 is changed to the state C3. Further, even indoors, when the illuminance is large and the gradation display by the reflected light is possible, the state C3 is changed to the state C2.

By configuring the display mode to be switched according to the illuminance as described above, it is possible to reduce the frequency of gradation display due to the light intensity of the light emitting element having a relatively large power consumption. Therefore, the power consumption of the display device can be reduced.

Further, the display device 99 can further switch the operation mode according to the remaining capacity of the battery, the content to be displayed, or the illuminance of the surrounding environment. For example, in a normal operation mode (normal mode) that operates at a normal frame frequency (typically 60 Hz or more and 240 Hz or less) and a low-speed frame frequency (frame frequency of about 1/100 to 1/10 of the normal operation mode). An idling stop (IDS) drive mode to be operated can be mentioned.

The idling stop (IDS) drive is a drive method for stopping the rewriting of the image data after executing the image data writing process. By writing the image data once and then extending the interval until the next image data is written, it is possible to reduce the power consumption required for writing the image data during that period.

Here, the idling stop (IDS) drive mode will be described with reference to FIG.

3A, 3B, and 3C are circuit diagrams and timing charts illustrating a normal drive mode and an idling stop (IDS) drive mode. Note that FIG. 3A clearly shows the reflecting element 10a (for example, a liquid crystal element) and the pixel circuit 11 electrically connected to the reflecting element 10a. Further, in the pixel circuit 11 shown in FIG. 3A, the signal line SL, the gate line GL, the transistor M1 connected to the signal line SL and the gate line GL, and the capacitive element Cs _LC connected to the transistor M1 are used. Is illustrated.

As the transistor M1, it is preferable to use a transistor having a metal oxide in the semiconductor layer. When a metal oxide has at least one of an amplification action, a rectifying action, and a switching action, the metal oxide is referred to as a metal oxide semiconductor or an oxide semiconductor, or OS for short. be able to. Hereinafter, a transistor having an oxide semiconductor (OS transistor) will be described as a typical example of the transistor. Since the leak current (off current) of the OS transistor in the non-conducting state is extremely low, the charge can be retained in the pixel electrode of the liquid crystal element by setting the OS transistor in the non-conducting state.

FIG. 3B is a timing chart showing waveforms of signals given to the signal line SL and the gate line GL in the normal drive mode. In the normal drive mode, it operates at a normal frame frequency (for example, 60 Hz). When one frame period is represented by the first subframe T ₁ , the second subframe T ₂ , and the third subframe T ₃ , a scan signal is given to the gate line GL in each frame period, and data D _p is written from the signal line SL. Do the action. This operation is the same even when the same data _Dp is written in the _first subframe T1 to the _third subframe T3, or when different data are written.

On the other hand, FIG. 3C is a timing chart showing waveforms of signals given to the signal line SL and the gate line GL in the idling stop (IDS) drive mode. In idling stop (IDS) drive, it operates at a low frame frequency (for example, 1 Hz). The one-frame period is represented by the period _TF , the data writing period is represented by the period _TW , and the data _retention period is represented by the period TR. The idling stop (IDS) drive mode gives a scan signal to the gate line GL during the period _TW , writes the data _{D p} of the signal line SL, fixes the gate line GL to a low level voltage during the period TR, and a transistor. The operation of holding the data _Dp once written with M1 in a non-conducting state is performed.

The idling stop (IDS) drive mode is effective because it is possible to further reduce power consumption by combining it with a display mode such as the reflection display mode or the reflection display + light emission display mode described above.

<Pixel circuit configuration>
The configuration of the pixel circuit and the operation of each pixel circuit at the time of reflection display, which is one aspect of the present invention, will be described with reference to FIGS. 4 to 9. In the description of the circuit diagram, the reflecting element 10a will be described as a liquid crystal element, and the light emitting element 10b will be described as an EL element.

Pixel 10 will be described. FIG. 4 is an example of a circuit diagram of the pixel 10. As described with reference to FIG. 1B, the pixel 10 includes a pixel circuit 11, a pixel circuit 12, a reflection element 10a, and a light emitting element 10b.

In FIG. 4, the pixel circuit 11 has a transistor M1 and a capacitive element Cs _LC . The pixel circuit 12 includes a transistor M2, a transistor M3, and a capacitive element Cs _EL . As shown in FIG. 4, each element of the pixel 10 includes a gate line GL _LC , a gate line GL _EL , a signal line SL _LC , a signal line SL _EL , a capacitance line L _CS , an anode line L _ano , and a cathode line L _cas . Connected to.

The capacitive element Cs _EL is provided to hold the voltage based on the image data for driving the light emitting element 10b at the gate of the transistor M3. With such a configuration, it is possible to more reliably hold the voltage for driving the light emitting element 10b.

The transistor M1 applies a voltage based on image data for driving the reflective element 10a to the capacitive element Cs _LC by controlling the conduction state. The transistor M2 applies a voltage for driving the light emitting element 10b to the gate of the transistor M3 by controlling the conduction state. The transistor M3 drives the light emitting element 10b by _passing a current between the anode line _Lano and the cathode line Lcas according to the voltage of the gate.

As the transistors M1 to M3, n-channel transistors can be used. The n-channel transistor can be replaced with a p-channel transistor by changing the magnitude relationship of the voltage of each wiring. Silicon can be used as the semiconductor material of the transistors M1 to M3. As the silicon, single crystal silicon, polysilicon, microcrystalline silicon, amorphous silicon and the like can be appropriately selected and used. Alternatively, an oxide semiconductor can be used as the semiconductor material of the transistors M1 to M3. This enables the IDS drive described above.

<Operation of pixel circuit>
In one aspect of the present invention, in the configuration of the pixel 10 of FIG. 4, the time for which the light emitting element 10b is driven to emit light in a pulse shape (pulse drive) and the light emitting element 10a reaches a desired brightness is insufficient. The configuration is such that the amount corresponding to the integrated value is supplemented.

Specifically, when the image data written in the pixel circuit 11 for driving the reflection element 10a is updated or when the display is refreshed, the first time integral value of the luminance that is insufficient for the desired luminance is calculated. Then, the generation of image data such that the second time integral value of the brightness emitted by the light emitting element 10b becomes equal to the first time integral value, and the period for pulse-driving the light emitting element 10b are calculated, and the pixel circuit 12 Write image data to. After the period in which the light emitting element 10b is pulse-driven, the image data written for pulse-driving is reset. It is also possible to set the period for driving the light emitting element 10b in a pulse (pulse period) to be constant and calculate only the image data.

FIG. 5A is a circuit diagram showing the reflective element 10a and the pixel circuit 11 in FIG. 4 extracted. Further, the timing chart shown in FIG. 5B is for explaining the driving of the reflecting element 10a and the pixel circuit 11. In FIG. 5A, one electrode of the reflecting element 10a is a node NL, and the common potential _VCOM given to the other electrode is shown.

In FIG. 5B, the gate line GL _LC is set to the H level at time T1. The period in which the gate line GL _LC is set to H level and the image data written in the pixel circuit 11 is updated to update the transmittance of the reflecting element 10a is also referred to as a first period. When image data (first image data) is written from the signal line _SLLC in this first period, the potential of the node NL, that is, the potential of the pixel electrode changes with a delay of the period P1 from the time T1. Further, the transmittance L_LC of the reflecting element 10a changes after the change of the potential of the pixel electrode is delayed by the period P2. In FIG. 5B, the change in the transmittance L_LC is illustrated by ΔL. The change in the transmittance L_LC of the reflecting element 10a with respect to the change in the potential of the node NL depends on the dynamic characteristics of the liquid crystal material used for the reflecting element 10a. Further, in order to prevent seizure of the reflective element 10a, so-called AC drive is performed in which positive and negative voltages are alternately applied to the liquid crystal display element (for example, every frame period F1 to F3). Therefore, the transmittance of the reflective element 10a changes significantly not only when the display image is changed but also when the display refresh is performed without changing the display image. The time-integrated value of the brightness that is insufficient for the desired brightness when the transmittance fluctuates is called the first time-integrated value.

FIG. 6A is a circuit diagram showing the light emitting element 10b and the pixel circuit 12 in FIG. 4 extracted. Further, the timing charts shown in FIGS. 6B and 6C are for explaining the driving of the light emitting element 10b and the pixel circuit 12. Note that FIG. 6A shows one electrode of the light emitting element 10b as a node NE.

In FIG. 6B, the gate line GL _EL is set to H level at time T1, the image data (second image data) is written from the signal line SL _EL at time T2, and then the potential of the signal line SL _EL is written at time T3. Is driven to "0", that is, to a potential at which the light emitting element 10b does not emit light. The period in which the second image data is written and the light emitting element 10b is pulse-driven, which is determined by the length of the period from time T1 to T3, is also referred to as a pulse period or a second period. At this time, the second image data to be written to the pixel circuit 12 is determined to be equal to the insufficient luminance (first time integral value) due to the slow response time of the reflective element 10a. The time-integrated value of the brightness of the light emitting element 10b that emits light in this pulse period is also referred to as a second time-integrated value. The second time integral value calculates the image data and the pulse period so as to be equal to the first time integral value, and writes the image data in the pixel circuit 12. After the period in which the light emitting element 10b is pulse-driven, the image data written for pulse-driving is reset.

By driving the light emitting element 10b according to FIG. 6B, the potential of the node NE, that is, the potential of the gate of the transistor M3 changes after the time T1. The emission luminance L_EL of the light emitting element 10b increases behind the change in the potential of the gate of the transistor M3. Further, the potential of the node NE, that is, the potential of the gate of the transistor M3 changes after the time T3. Behind the change in the potential of the gate electrode of the drive transistor, the emission luminance L_EL of the light emitting element 10b decreases and no light is emitted. In FIG. 6B, the change in the emission luminance L_EL of the light emitting element 10b with respect to the change in the potential of the gate of the transistor M3 is faster than the transmittance L_LC of the reflection element 10a.

In FIG. 6C, unlike FIG. 6B, the signal line SL _EL is set to the potential corresponding to the second image data before the time T1, for example, before the gate line GL _EL is set to the H level. The configuration to be placed is illustrated. As shown in FIG. 6B, raising or lowering the potential supplied to the signal line SL _EL during the H level period of the gate line GL _LC increases the selection period per line. It is inconvenient when applied to a display device having a large number of display devices, that is, a display device having a high number of pixels. Therefore, before setting the gate line GL _EL to H level, the potential of the signal line SL _EL is determined, the gate line GL _EL is set to H level, and then the signal line SL _EL is set to “0” after the pulse period. The configuration is valid.

In the case of realizing the operation of the timing chart of FIG. 6 (C), that is, in the configuration of the source driver when the image data supplied to the signal line SL _EL and "0" are switched at high speed and operated, FIGS. Shown in B).

In the configuration of FIG. 7A, the shift register 41 included in the source driver, the first latch circuit 42, the second latch circuit 43, and the digital analog circuit 44 are illustrated. The image data (V _DATA ) and "0" switching in the timing chart of FIG. 7B may be configured to alternately input data held in the first latch circuit 42 and the second latch circuit 43. can.

The configuration of FIG. 7B illustrates the changes between the data held by the first latch circuit 42 and the second latch circuit 43, the potential of the signal line SL _EL , and the potential of the gate line GL _EL . .. In the configuration of FIG. 7B, "V _DATA " and "0" are alternately given to the first latch circuit 42 and the second latch circuit 43. Therefore, a pulsed waveform that fluctuates between the potential based on the image data (V _DATA ) and “0” can be obtained by the signal line SL _EL . The length of time T1 to T3 (pulse period) in which the light emitting element 10b is pulse-driven by setting the potential of the gate line GL _EL to the H level during the period when the potential based on the image data (V _DATA ) is given to the signal line SL _EL . ) Is determined.

Further, FIG. 8A also illustrates the change in the transmittance L_LC of the reflecting element 10a shown in the timing charts of FIGS. 5B and 6B and the emission luminance L_EL of the light emitting element 10b. It is a timing chart.

Since the change of the transmittance L_LC of the reflecting element 10a is slow, when the AC drive is performed, the transmittance L_LC may fluctuate even if the displayed image does not fluctuate, which may lead to deterioration of the display quality. In one aspect of the present invention, the luminance deficiency due to the slow fluctuation of the transmittance L_LC is utilized by utilizing the fact that the change of the emission luminance L_EL of the light emitting element 10b is faster than the change of the transmittance L_LC of the reflecting element 10a. The emission luminance L_EL of the light emitting element 10b is pulse-driven so as to supplement the above.

The difference from the ideal value (time integral value of luminance, first time integral value) due to the delay in the change of the transmittance _{L_LC} of the reflecting element 10a is the area SLC in FIG. 8 (A). The change in luminance corresponding to this area is visually recognized by the user as the amount of insufficient luminance. On the other hand, in one aspect of the present invention, the emission luminance L_EL of the light emitting element 10b is pulse-driven during the period when the luminance is insufficient, and the time integral value (second time integral value) is the area in FIG. 8 (A). Make it _SEL . The image data to be written to the pixel circuit 12 and the times T1 to T3 so that this area _SEL becomes equal to the insufficient brightness (first time integrated value) due to the slow response time of the reflecting element 10a. Determine the length (pulse period).

In the configuration of FIG. 8A, the configuration in which the light _emitting element is pulse-driven once in order to obtain the area SEL corresponding to the second time integral value is shown, but other configurations may be used. For example, as in the configuration of FIG. 8B, the area SEL corresponding to the second time integral value may be pulse-driven a plurality of times to obtain the light _emitting element. Alternatively, as in the configuration of FIG. 8C, the area SEL corresponding to the second time integral value is obtained by writing image data to the light emitting element so as to have a small brightness and driving the light _emitting element with a pulse for a certain period of time. May be.

The first time integral value can be obtained from the dynamic characteristics and image data of the reflective element 10a, and the image data immediately before writing the image data. The second time integral value can be obtained from the dynamic characteristics of the light emitting element 10b, the third image data, and the pulse period.

For the purpose of compensating for the shortage, a configuration for correcting the image data to be written in the pixel circuit 11 for driving the reflection element 10a, for example, a configuration for writing the corrected image data in which the shortage is added to the image data is also possible. However, when the IDS drive is used, there is a possibility that the time until the writing of the next image data is not always fixed at the time of writing the corrected image data. Therefore, it is difficult to accurately determine the correction amount because the time for holding the corrected image data is unknown.

Since changing the pulse period for each pixel, each pixel row, or each frame may complicate the circuit configuration, the pulse period is fixed and only the third image data is calculated. It is also possible to do this. Further, it is also effective to use a method of changing only the third image data and a method of changing the third image data and the pulse period according to the corresponding luminance.

With the above configuration, complementary display is possible in consideration of the difference in response time between the reflecting element and the light emitting element. Further, the light emitting period can be shortened by driving the light emitting element in a pulsed manner. Therefore, good display quality and low power consumption are possible.

As another configuration, a configuration may be added to the configuration of the pixel circuit 11 to drive the light emitting element 10b in a pulsed manner.

The pixel circuit 11A shown in FIG. 9A differs from the pixel circuit 11 described above in that it has a transistor M4 having a gate connected to the signal line GL _RS . The transistor M4 has a function of controlling the conduction state by the signal of the signal line GL _RS and giving a potential V _RS (for example, “0”) that initializes the potential corresponding to the image data given as the potential of the node NE. According to the configuration of FIG. 9A, the light emitting element 10b can be driven to a potential that does not emit light at time T3.

As another configuration, the pixel circuit 11B shown in FIG. 9B differs from the above-mentioned pixel circuit 11 in that it has a transistor M5 having a gate connected to the signal line GL _RS . The transistor M5 has a function of controlling to cut off the current flowing through the light emitting element 10b by the signal of the signal line GL _RS . According to the configuration of FIG. 9B, the light emitting element 10b can be driven to a potential that does not emit light at time T3.

As another configuration, the pixel circuit 11C shown in FIG. 9C differs from the above-mentioned pixel circuit 11 in that it has a transistor M3 having a back gate connected to the signal line GL _RS . The transistor M3 has a function of controlling the threshold voltage of the transistor M3 so as to reduce the current flowing through the light emitting element 10b even if the image data is given to the node NE by the signal of the signal line GL _RS . According to the configuration of FIG. 9C, the light emitting element 10b can be driven to a potential that does not emit light at time T3.

(Embodiment 2)
In the present embodiment, the configuration of the display device in which the touch sensor unit is added to the display unit 110 described in the first embodiment will be described.

<< Display device >>
FIG. 10 is a block diagram showing a configuration example of the display device. The display device 100 includes a display unit 110 and a touch sensor unit 120.

<Display unit>
Since the display unit 110 has the same configuration as that described in the first embodiment, the description thereof will be omitted here.

<Touch sensor unit>
The touch sensor unit 120 shown in FIG. 10 has a sensor array 121 and a peripheral circuit 125. The peripheral circuit 125 includes a touch sensor driver (hereinafter referred to as “TS driver”) 126 and a sense circuit 127. The peripheral circuit 125 can be configured by a dedicated IC.

FIG. 11 shows a configuration example of the touch sensor unit 120. Here, an example is shown in which the touch sensor unit 120 is a mutual capacitance touch sensor unit. The sensor array 121 has m (m is an integer of 1 or more) wiring DRL and n (n is an integer of 1 or more) wiring SNL. The wiring DRL is a drive line, and the wiring SNL is a sense line. Here, the αth wiring DRL is referred to as a wiring DRL <α>, and the βth wiring SNL is referred to as a wiring SNL <β>. The capacitance CT _αβ is a capacitance formed between the wiring DRL <α> and the wiring SNL <β>.

The m wiring DRLs are electrically connected to the TS driver 126. The TS driver 126 has a function of driving the wiring DRL. The n wiring SNLs are electrically connected to the sense circuit 127. The sense circuit 127 has a function of detecting a signal of the wiring SNL. The signal of the wiring SNL <β> when the wiring DRL <α> is driven by the TS driver 126 has information on the amount of change in the capacitance value of the capacitance CT _αβ . By analyzing the signals of the n wiring SNLs, it is possible to obtain information such as the presence / absence of touch and the touch position.

<< Controller IC >>
FIG. 12 is a block diagram showing a configuration example of the controller IC 115. The controller IC 115 includes an interface 150, a frame memory 151, a decoder 152, a sensor controller 153, a controller 154, a clock generation circuit 155, an image processing unit 160, a memory 170, a timing controller 173, a register 175, a source driver 180, and a touch sensor controller 184. Has.

The source driver 180 includes source drivers 181 and 182. The source driver 181 is a driver for driving the reflection element 10a, and the source driver 182 is a driver for driving the light emitting element 10b. Here, a controller IC will be described when the reflecting element 10a is a liquid crystal display (LC) element and the light emitting element 10b is an electroluminescence (organic EL) element.

Communication between the controller IC 115 and the host 140 is performed via the interface 150. Image data, various control signals, and the like are sent from the host 140 to the controller IC 115. Further, information such as the touch position acquired by the touch sensor controller 184 is sent from the controller IC 115 to the host 140. Each circuit of the controller IC 115 is appropriately discarded according to the specifications of the host 140, the specifications of the display device 100, and the like.

The frame memory 151 is a memory for storing the image data input to the controller IC 115. When the compressed image data is sent from the host, the frame memory 151 can store the compressed image data. The decoder 152 is a circuit for decompressing compressed image data. If it is not necessary to decompress the image data, the decoder 152 does not perform any processing. Alternatively, the decoder 152 may be arranged between the frame memory 151 and the interface 150.

The image processing unit 160 has a function of performing various image processing on the image data. For example, the image processing unit 160 includes a gamma correction circuit 161, a dimming circuit 162, a toning circuit 163, and an EL correction circuit 164.

The EL correction circuit 164 is provided when the source driver 182 is provided with a current detection circuit for detecting the current flowing through the light emitting element 10b. The EL correction circuit 164 has a function of adjusting the brightness of the light emitting element 10b based on the signal transmitted from the current detection circuit of the source driver 182.

The image data processed by the image processing unit 160 is output to the source driver 180 via the memory 170. The memory 170 is a memory for temporarily storing image data. The source drivers 181, 182, respectively, have a function of processing the input image data and writing it to the source line of the pixel array 111.

The timing controller 173 has a function of generating a timing signal used by the source driver 180, the touch sensor controller 184, and the gate drivers 113 and 114 of the display unit 110.

The touch sensor controller 184 has a function of controlling the TS driver 126 and the sense circuit 127 of the touch sensor unit 120. The signal including the touch information read by the sense circuit 127 is processed by the touch sensor controller 184 and sent to the host 140 via the interface 150. The host 140 generates image data reflecting the touch information and sends it to the controller IC 115. The controller IC 115 can also be configured to reflect the touch information in the image data.

The clock generation circuit 155 has a function of generating a clock signal used in the controller IC 115. The controller 154 has a function of processing various control signals sent from the host 140 via the interface 150 and controlling various circuits in the controller IC 115. Further, the controller 154 has a function of controlling power supply to various circuits in the controller IC 115. Hereinafter, temporarily cutting off the power supply to an unused circuit is referred to as power gating.

The register 175 stores data used for the operation of the controller IC 115. The data stored in the register 175 includes parameters used by the image processing unit 160 for performing correction processing, parameters used by the timing controller 173 to generate waveforms of various timing signals, and the like. The register 175 includes a scan chain register composed of a plurality of registers. The image data to be written to the pixel circuit 12 and the lengths of the times T1 to T3 (the lengths of the times T1 to T3) so as to be equal to the shortage of brightness (first time integrated value) due to the slow response time of the above-mentioned reflecting element 10a. The pulse period) is determined, and the parameters for adjusting the reflection intensity and the timing signal of the reflection element 10a corresponding to the image data and the pulse period are stored.

An optical sensor 143 is electrically connected to the sensor controller 153. The optical sensor 143 detects the external light 145 and generates a detection signal. The sensor controller 153 generates a control signal based on the detection signal. The control signal generated by the sensor controller 153 is output to, for example, the controller 154.

Further, when the reflecting element 10a and the light emitting element 10b display the same image data, the image processing unit 160 has a function of separately creating the image data displayed by the reflecting element 10a and the image data displayed by the light emitting element 10b. Have. In this case, the reflection intensity and the emission intensity of the reflecting element 10a and the light emitting element 10b can be adjusted according to the brightness of the external light 145 measured by using the optical sensor 143 and the sensor controller 153. Here, the adjustment is referred to as dimming or dimming processing. Further, the circuit that executes the process is called a dimming circuit.

When the display device 100 is used outside during the daytime on a sunny day, it is not necessary to illuminate the light emitting element 10b when sufficient brightness can be obtained only by the reflecting element 10a. This is because even if the light emitting element 10b is used for display, a good display cannot be obtained due to the loss of external light. Further, when the display device 100 is used at night or in a dark place, the light emitting element 10b is illuminated to perform display.

Depending on the brightness of the external light, the image processing unit 160 creates image data to be displayed only by the reflecting element 10a, or creates image data to be displayed only by the light emitting element 10b, or the reflecting element 10a and the light emitting element 10b. It is possible to create image data to be displayed by combining the above. The display device 100 can perform good display in both an environment with bright outside light and an environment with dark outside light. Further, in a bright environment of external light, the power consumption can be reduced by not illuminating the light emitting element 10b or by lowering the brightness of the light emitting element 10b.

Further, the color tone can be corrected by combining the display of the light emitting element 10b with the display of the light emitting element 10a. For such color tone correction, a function for measuring the color tone of the external light 145 may be added to the optical sensor 143 and the sensor controller 153. For example, when the display device 100 is used in a reddish environment at dusk, the B (blue) component is insufficient only by the display by the reflecting element 10a, so that the color tone can be corrected by causing the light emitting element 10b to emit light. .. Here, the correction is referred to as toning or toning processing. Further, the circuit that executes the process is called a toning circuit.

The image processing unit 160 may have another processing circuit such as an RGB-RGBW conversion circuit depending on the specifications of the display device 100. The RGB-RGBW conversion circuit is a circuit having a function of converting RGB (red, green, blue) image data into RGBW (red, green, blue, white) image data. That is, when the display device 100 has RGBW4 color pixels, power consumption can be reduced by displaying the W (white) component in the image data using the W (white) pixels. The RGB-RGBW conversion circuit is not limited to this, and may be, for example, an RGB-RGBY (red, green, blue, yellow) conversion circuit.

Further, the reflecting element 10a and the light emitting element 10b can display different image data. In general, many liquid crystals, electronic papers, and the like that can be applied as reflective elements have a slow operating speed (it takes time to display a picture). Therefore, a still image as a background can be displayed on the reflective element 10a, and a moving mouse pointer or the like can be displayed on the light emitting element 10b. By performing the above-mentioned IDS drive for still images and illuminating the light emitting element 10b for moving images, the display device 100 can achieve both smooth moving image display and low power consumption. In this case, the frame memory 151 may be provided with an area for storing image data to be displayed on each of the reflecting element 10a and the light emitting element 10b.

<Parameter>
Image correction processing such as gamma correction, dimming, and toning corresponds to processing for creating output correction data Y for input image data X. The parameter used by the image processing unit 160 is a parameter for converting the image data X into the correction data Y. Further, the image data to be written to the pixel circuit 12 and the lengths of the times T1 to T3 (pulse period) so as to be equal to the shortage of brightness (first time integrated value) due to the slow response time of the reflecting element 10a. ) Is determined, and a parameter for adjusting the reflection intensity of the reflection element 10a corresponding to the image data is stored.

The parameter setting method includes a table method and a function approximation method. In the table method shown in FIG. 13A, the correction data Yn is stored in the table as a parameter for the image data Xn. The table method requires a large number of registers for storing the parameters corresponding to the table, but the degree of freedom of correction is high. On the other hand, when the correction data Y for the image data X can be determined empirically in advance, it is effective to adopt the function approximation method as shown in FIG. 13B. The parameters are a1, a2, b2, and the like. Here, the method of linear approximation for each section is shown, but the method of approximation by a nonlinear function is also possible. In the function approximation method, the degree of freedom of correction is low, but the number of registers that store the parameters that define the function is small.

The parameter used by the timing controller 173 indicates, for example, as shown in FIG. 13C, the timing at which the generated signal of the timing controller 173 becomes “L” (or “H”) with respect to the reference signal. be. The parameter Ra (or Rb) indicates how many clock cycles the timing of becoming “L” (or “H”) with respect to the reference signal is.

The above parameters for correction can be stored in the register 175. In addition to the above, parameters that can be stored in the register 175 include data of the EL correction circuit 164, brightness, color tone, and energy saving setting of the display device 100 set by the user (time until the display is darkened or turned off). , The sensitivity of the touch sensor controller 184, and the like. Further, the image data to be written to the pixel circuit 12 and the lengths (pulse periods) of the times T1 to T3 are determined so as to be equal to the shortage of the brightness of the reflecting element 10a (first time integrated value), and the pulse period is determined. A parameter for adjusting the timing signal corresponding to is also included.

<Power gating>
The controller 154 can power gate a part of the circuit in the controller IC 115 when there is no change in the image data sent from the host 140. Specifically, for example, it refers to a circuit in the area 190 (frame memory 151, decoder 152, image processing unit 160, memory 170, timing controller 173, register 175, source driver 180). It is possible to transmit a control signal indicating that there is no change in the image data from the host 140 to the controller IC 115, and to perform power gating when the control signal is detected by the controller 154.

Since the circuit in the area 190 is a circuit related to the image data and a circuit for driving the display unit 110, the circuit in the area 190 can be temporarily stopped if there is no change in the image data. Even if there is no change in the image data, the time during which the transistor used for the pixel 10 can hold the data (time during which idling can be stopped) and the liquid crystal display (LC) element applied as the reflecting element 10a to prevent seizure. You may consider the time of the reversal drive to be performed.

For example, the controller 154 may incorporate a timer to determine when to resume power supply to the circuit in the region 190 based on the time measured by the timer. It is possible to store the image data in the frame memory 151 or the memory 170 and use the image data as the image data to be supplied to the display unit 110 at the time of inversion drive. With such a configuration, inversion drive can be executed without transmitting image data from the host 140. Therefore, the amount of data transmitted from the host 140 can be reduced, and the power consumption of the controller IC 115 can be reduced.

Hereinafter, a specific circuit configuration of the frame memory 151 and the register 175 will be described. The circuit in the region 190, the sensor controller 153, the touch sensor controller 184, and the like described as circuits capable of power gating are not limited to this. Various combinations can be considered depending on the configuration of the controller IC 115, the standard of the host 140, the specifications of the display device 100, and the like.

<Frame memory 151>
FIG. 14A shows a configuration example of the frame memory 151. The frame memory 151 includes a control unit 202, a cell array 203, and a peripheral circuit 208. The peripheral circuit 208 includes a sense amplifier circuit 204, a driver 205, a main amplifier 206, and an input / output circuit 207.

The control unit 202 has a function of controlling the frame memory 151. For example, the control unit 202 controls the driver 205, the main amplifier 206, and the input / output circuit 207.

A plurality of wiring WLs and CSELs are electrically connected to the driver 205. The driver 205 generates a signal to be output to a plurality of wiring WLs and CSELs.

The cell array 203 has a plurality of memory cells 209. The memory cell 209 is electrically connected to the wiring WL, LBL (or LBLB), and BGL. The wiring WL is a word line, and the wiring LBL and LBLB are local bit lines. In the example of FIG. 14A, the configuration of the cell array 203 is a folded bit line method, but an open bit line method can also be used.

FIG. 14B shows a configuration example of the memory cell 209. The memory cell 209 has a transistor MW1 and a capacitive element CS1. The memory cell 209 has a circuit configuration similar to that of a memory cell of a DRAM (Dynamic Random Access Memory). Here, the transistor MW1 is a transistor having a back gate. The back gate of the transistor MW1 is electrically connected to the wiring BGL. The voltage Vbg_w1 is input to the wiring BGL.

The transistor MW1 is a transistor (also referred to as an “OS transistor”) having an oxide semiconductor in a channel forming region. Since the off-current of the OS transistor is extremely small, by configuring the memory cell 209 with the OS transistor, it is possible to suppress the leakage of electric charge from the capacitive element CS1, so that the frequency of the refresh operation of the frame memory 151 can be reduced. Further, even if the power supply is cut off, the frame memory 151 can hold the image data for a long time. Further, by setting the voltage Vbg_w1 to a negative voltage, the threshold voltage of the transistor MW1 can be shifted to the positive potential side, and the holding time of the memory cell 209 can be lengthened.

The off-current here means the current flowing between the source and the drain when the transistor is in the off state. When the transistor is an n-channel type, for example, when the threshold voltage is about 0V to 2V, the current flowing between the source and the drain when the gate voltage with respect to the source is a negative voltage is turned off. Can be called. Further, the extremely small off-current means that, for example, the off-current per 1 μm of the channel width is 100 zA (z; Zepto, ^10-21 ) or less. Since the smaller the off current is, the more preferable it is, so that the normalized off current is preferably 10 zA / μm or less, or 1 zA / μm or less, and more preferably 10 ^yA / μm (y; Yocto, 10-24) or less. preferable.

Since the band gap of the oxide semiconductor is 3.0 eV or more, the leakage current due to thermal excitation of the OS transistor is small, and the off current is extremely small as described above. The oxide semiconductor applied to the channel forming region is preferably an oxide semiconductor containing at least one of indium (In) and zinc (Zn). As such an oxide semiconductor, In—M—Zn oxide (element M is, for example, Al, Ga, Y or Sn) is typical. By reducing impurities such as water or hydrogen that serve as electron donors and reducing oxygen deficiency, it is possible to make oxide semiconductors i-type (intrinsic semiconductors) or to make them as close as possible to i-type. .. Here, such an oxide semiconductor can be referred to as a highly purified oxide semiconductor. By applying a highly purified oxide semiconductor, the off-current of the OS transistor standardized by the channel width can be reduced to about several yA / μm or more and several zA / μm or less.

Since the transistor MW1 of the plurality of memory cells 209 of the cell array 203 is an OS transistor, the transistor of the other circuit can be, for example, a Si transistor manufactured on a silicon wafer. As a result, the cell array 203 can be stacked and provided on the sense amplifier circuit 204. Therefore, the circuit area of the frame memory 151 can be reduced, which leads to the miniaturization of the controller IC 115.

The cell array 203 is provided so as to be laminated on the sense amplifier circuit 204. The sense amplifier circuit 204 has a plurality of sense amplifiers SA. The sense amplifier SA is electrically connected to adjacent wiring LBL, LBLB (local bit line pair), wiring GBL, GBLB (global bit line pair), and a plurality of wiring CSELs. The sense amplifier SA has a function of amplifying the potential difference between the wiring LBL and the wiring LBLB.

The sense amplifier circuit 204 is provided with one wiring GBL for four wiring LBBLs and one wiring GBLB for four wiring LBLBs. However, the configuration of the sense amplifier circuit 204 is provided. Is not limited to the configuration example of FIG. 14 (A).

The main amplifier 206 is connected to the sense amplifier circuit 204 and the input / output circuit 207. The main amplifier 206 has a function of amplifying the potential difference between the wiring GBL and the wiring GBLB. The main amplifier 206 can be omitted.

The input / output circuit 207 reads the potential corresponding to the write data to the wiring GBL and the wiring GBLB or the main amplifier 206, the potential of the wiring GBL and the wiring GBLB, or the output potential of the main amplifier 206, and reads the potential to the outside as data. It has a function to output. A sense amplifier SA for reading data and a sense amplifier SA for writing data can be selected by the signal of the wiring CSEL. Therefore, since the input / output circuit 207 does not require a selection circuit such as a multiplexer, the circuit configuration can be simplified and the occupied area can be reduced.

<Register 175>
FIG. 15 is a block diagram showing a configuration example of the register 175. The register 175 has a scan chain register unit 175A and a register unit 175B. The scan chain register unit 175A has a plurality of registers 230. A scan chain register is composed of a plurality of registers 230. The register unit 175B has a plurality of registers 231.

The register 230 is a non-volatile register in which data is not lost even when the power supply is cut off. In order to make the register 230 non-volatile, here, the register 230 includes a holding circuit using an OS transistor.

On the other hand, register 231 is a volatile register. There are no particular restrictions on the circuit configuration of the register 231 as long as it is a circuit capable of storing data, and it may be configured with a latch circuit, a flip-flop circuit, or the like. The image processing unit 160 and the timing controller 173 access the register unit 175B and take in data from the corresponding register 231. Alternatively, the image processing unit 160 and the timing controller 173 control the processing content according to the data supplied from the register unit 175B.

When updating the data stored in the register 175, first, the data in the scan chain register unit 175A is changed. After rewriting the data of each register 230 of the scan chain register unit 175A, the data of each register 230 of the scan chain register unit 175A is collectively loaded into each register 231 of the register unit 175B.

As a result, the image processing unit 160, the timing controller 173, and the like can perform various processes using the collectively updated data. Since the simultaneity of data update is maintained, stable operation of the controller IC 115 can be realized. By providing the scan chain register unit 175A and the register unit 175B, the data of the scan chain register unit 175A can be updated even while the image processing unit 160 and the timing controller 173 are operating.

When power gating of the controller IC 115 is executed, data is stored (saved) in the holding circuit in the register 230, and then the power supply is cut off. After the power is restored, the data in the register 230 is restored (loaded) to the register 231 and the normal operation is resumed. If the data stored in the register 230 and the data stored in the register 231 do not match, the data in the register 231 is saved in the register 230, and then the data is stored in the holding circuit of the register 230 again. The configuration is preferred. Examples of cases where the data do not match include inserting update data into the scan chain register unit 175A.

FIG. 16 shows an example of a circuit configuration of the register 230 and the register 231. FIG. 16 shows the registers 230 for two stages of the scan chain register unit 175A and the two registers 231 corresponding to these registers 230.

The register 230 has a holding circuit 17, a selector 18, and a flip-flop circuit 19. A scan flip-flop circuit is composed of a selector 18 and a flip-flop circuit 19.

The signals SAVE2 and LOAD2 are input to the holding circuit 17. The holding circuit 17 includes transistors T1 to T6 and capacitive elements C4 and C6. The transistors T1 and T2 are OS transistors. The transistors T1 and T2 may be OS transistors with a back gate in the same manner as the transistor MW1 of the memory cell 209 (see FIG. 14B).

The transistors T1, T3, T4 and the capacitive element C4 form a three-transistor type gain cell. Similarly, the transistors T2, T5, T6 and the capacitive element C6 form a three-transistor type gain cell. The two gain cells store complementary data held by the flip-flop circuit 19. Since the transistors T1 and T2 are OS transistors, the holding circuit 17 can hold data for a long time even when the power supply is cut off. In the register 230, the transistors other than the transistors T1 and T2 may be composed of Si transistors.

The holding circuit 17 stores complementary data held by the flip-flop circuit 19 according to the signal SAVE2, and loads the held data into the flip-flop circuit 19 according to the signal LOAD2.

The output terminal of the selector 18 is electrically connected to the input terminal of the flip-flop circuit 19, and the input terminal of the register 231 is electrically connected to the data output terminal. The flip-flop circuit 19 includes inverters 20 to 25 and analog switches 27 and 28. The conduction state of the analog switches 27 and 28 is controlled by a scan clock (denoted as Scan Clock) signal. The flip-flop circuit 19 is not limited to the circuit configuration of FIG. 16, and various flip-flop circuits 19 can be applied.

The output terminal of the register 231 is electrically connected to one of the two input terminals of the selector 18, and the output terminal of the flip-flop circuit 19 in the previous stage is electrically connected to the other. Data is input from the outside of the register 175 to the input terminal of the selector 18 in the first stage of the scan chain register unit 175A.

The register 231 includes an inverter 31 to 33, a clocked inverter 34, an analog switch 35, and a buffer 36. The register 231 loads the data of the flip-flop circuit 19 based on the signal LOAD1. The transistor of the register 231 may be composed of a Si transistor.

Next, an operation example of the register 175 will be described. FIG. 17 shows a simplified configuration of the register 175 shown in FIG. Here, the register 175 is an N-stage register (N is an integer of 2 or more), the register 230 (230 [1] to [N]), the holding circuit 17 (17 [1] to [N]), and the flip-flop circuit 19 (19). The case of having [1] to [N]) will be described.

In FIG. 17, the data DR shows the data output from the flip flop circuit 19 to the register 231, the data DS shows the data output from the register 231 to the flip flop circuit 19, and the data DSR shows the flip flop circuit 19 and the holding circuit. The data input / output between 17 is shown, and the data DOS represents the data stored in the holding circuit 17. Further, data Q1 to QN are output from the registers 231 [1] to [N], respectively. The data Q1 to QN correspond to the parameters output from the register 175 in FIG. 12 and the like.

FIG. 18 is a timing chart showing an operation example of the register 175 shown in FIG. Here, as an example, a case where data D ₁ to _DN are stored in the flip-flop circuits 19 [1] to [N] will be described.

First, in the period T41, the data _DN to D ₁ are sequentially input as signals Scan In, and the data D ₁ to _DN are stored in the flip-flop circuits 19 [1] to [N]. As a result, the data D ₁ to _DN are output as the data DR [1] to [N] and the data DSR [1] to [N].

Next, in the period T42, the signal LOAD1 becomes a high level. As a result, the data D ₁ to DN output as the data DR [1] to [ _N ] are stored in the registers 231 [1] to [N]. As a result, the data D ₁ to _DN are output as the data Q1 to QN and the data DS [1] to [N]. In this way, the data sequentially input as the signal Scan In are collectively output as data Q1 to QN. This makes it possible to collectively change the parameters and the like output from the register 175.

Next, in the period T43, the signal SAVE1 becomes a high level. As a result, the data D ₁ to DN output as the data DS [1] to [ _N ] are stored in the flip-flop circuits 19 [1] to [N]. As a result, the data D ₁ to _DN are output as the data DR [1] to [N] and the data DSR [1] to [N].

As shown in FIG. 18, even if the signal Scan In fluctuates during the period between the period T42 and the period T43 and the data stored in the flip-flop circuits 19 [1] to [N] is changed, the data Q1 to QN are not changed. Further, by the operation in the period T43, the data of the flip-flop circuits 19 [1] to [N] can be overwritten by the data Q1 to QN, and the data stored in the registers 231 [1] to [N] can be overwritten. The data stored in the flip-flop circuits 19 [1] to [N] can be matched. As a result, even when the data to be described later is saved while the data stored in the flip-flop circuits 19 [1] to [N] is being updated, the data is saved while the data consistency is maintained. can do. In addition, the saved data can be restored at high speed.

Next, in the period T44, the signal SAVE2 becomes a high level. As a result, the data D ₁ to DN output as the data DSR [1] to [ _N ] are stored in the holding circuits 17 [1] to [N]. That is, the data stored in the flip-flop circuits 19 [1] to [N] is saved in the holding circuits 17 [1] to [N]. As a result, the data DOS [1] to [ _N ] become the data D ₁ to DN. Specifically, the potentials of the electrodes of the capacitive elements C3 and C4 in FIG. 16 are potentials corresponding to the data D ₁ to _DN .

Next, in the period T45, the supply of the power supply potential VDD3 to the register 175 is stopped, whereby the output of data from the register 231 and the holding circuit 17 and the flip-flop circuit 19 is stopped. However, the data DOS [1] to [N] stored in the holding circuit 17 are held even during the period when the supply of electric power to the register 175 is stopped. Specifically, the capacitance elements C4 and C6 in FIG. 16 hold the potentials corresponding to the data D ₁ to _DN .

Next, in the period T46, the power supply to the register 175 is restarted, and the signal LOAD2 becomes a high level. At this time, the data D ₁ to DN held in the holding circuit 17 are output as data DRS [1] to [ _N ] and stored in the flip-flop circuits 19 [1] to [N]. That is, the data saved in the holding circuits 17 [1] to [N] is returned to the flip-flop circuits 19 [1] to [N]. As a result, the data D ₁ to _DN are output as the data DR [1] to [N].

Next, in the period T47, the signal LOAD1 becomes a high level. As a result, the data D ₁ to DN output as the data DR [1] to [ _N ] are stored in the registers 231 [1] to [N]. As a result, the data D ₁ to _DN are output as the data Q1 to QN and the data DS [1] to [N]. As a result, the data restored from the holding circuits 17 [1] to [N] are output to the outside as data Q1 to QN.

As described above, the register 175 can collectively change the output to the outside in response to the sequentially input data. Further, the register 175 can hold the saved data during the period when the power supply is stopped.

<Other configuration examples of controller IC>
Other configuration examples of the controller IC will be described below.

FIG. 19 shows a configuration example of a controller IC that does not have a built-in source driver. The controller IC 117 shown in FIG. 19 is a modification of the controller IC 115 and has a region 191. The controller 154 controls the power supply to the circuits in the region 191.

The area 191 is not provided with a source driver. Therefore, the display unit 110 has a source driver IC186. The number of source driver ICs 186 is determined according to the number of pixels of the pixel array 111.

The source driver IC186 has a function of driving both the reflecting element 10a and the light emitting element 10b. Therefore, although the source driver is configured by one type of source driver IC186 here, the configuration of the source driver is not limited to this. For example, a source driver IC for driving the reflection element 10a and a source driver IC for driving the light emitting element 10b may form a source driver.

Similar to the gate drivers 113 and 114, the source driver may be manufactured on the substrate of the pixel array 111.

The controller IC 117 may be provided with one or both of the TS driver 126 and the sense circuit 127. The same applies to the controller IC 115.

<< Operation example >>
An operation example of the controller IC 115 and the register 175 relating to the display device 100 will be described separately before shipment, at the time of starting the electronic device having the display device 100, and at the time of normal operation.

<Before shipping>
Prior to shipment, parameters related to the specifications of the display device 100 and the like are stored in the register 175. These parameters include, for example, the number of pixels, the number of touch sensors, the parameters used by the timing controller 173 to generate various timing signals, and when the source driver 182 includes a current detection circuit for detecting the current flowing through the light emitting element 10b. There is correction data of the EL correction circuit 164 and the like. In addition to the register 175, these parameters may be stored in a dedicated ROM.

<At startup>
When the electronic device having the display device 100 is started, parameters such as user settings sent from the host 140 are stored in the register 175. These parameters include, for example, display brightness and color tone, touch sensor sensitivity, energy saving settings (time until the display is dimmed or turned off), gamma correction curves and tables, and the like. When the parameter is stored in the register 175, the scan clock signal and the data corresponding to the parameter are transmitted from the controller 154 to the register 175 in synchronization with the scan clock signal.

<Normal operation>
The normal operation is divided into a state in which a moving image or the like is displayed, a state in which an IDS drive is possible while displaying a still image, a state in which the display is not performed, and the like. While the image processing unit 160, the timing controller 173, and the like are operating in the state of displaying a moving image or the like, the data of the register 175 is changed to the scan chain register unit 175A, so that the image processing unit 160 is displayed. There is no effect on such things. After the data change of the scan chain register unit 175A is completed, the data change of the register 175 is completed by collectively loading the data of the scan chain register unit 175A into the register unit 175B. Further, the image processing unit 160 and the like are switched to the operation corresponding to the data.

When the still image is being displayed and the IDS can be driven, the register 175 can be power gated like other circuits in the region 190, for example. In this case, before power gating, in the register 230 of the scan chain register unit 175A, the work of storing the complementary data held by the flip-flop circuit 19 in the holding circuit 17 is performed according to the signal SAVE2.

When returning from power gating, the data held by the holding circuit 17 is loaded into the flip-flop circuit 19 according to the signal LOAD2, and the data of the flip-flop circuit 19 is loaded into the register 231 according to the signal LOAD1. In this way, the data in the register 175 becomes valid in the same state as before power gating. Even in the power gating state, if the host 140 requests to change the parameter of the register 175, the power gating of the register 175 can be canceled and the parameter can be changed.

In the non-display state, for example, the circuit (including the register 175) in the region 190 can be power gated. In this case, the host 140 may also stop, but since the frame memory 151 and the register 175 are non-volatile, when returning from power gating, the display before power gating (display before power gating without waiting for the return of the host 140). Still image) can be performed.

For example, when the display device 100 is applied to the display unit of a foldable mobile phone, when it is detected by the signal of the open / close sensor 144 that the mobile phone is folded and the display surface of the display device 100 is not used, the area 190 In addition to the circuit inside, the sensor controller 153, the touch sensor controller 184, and the like can be power-gated.

When the mobile phone is folded, the host 140 may stop depending on the standard of the host 140. Even if the mobile phone is expanded again with the host 140 stopped, the frame memory 151 and the register 175 are non-volatile, so that the frame memory 151 contains the frame memory 151 before the image data, various control signals, etc. are sent from the host 140. Image data can be displayed.

As described above, the register 175 has a scan chain register unit 175A and a register unit 175B, and by changing data to the scan chain register unit 175A, the image processing unit 160, the timing controller 173, and the like are not affected. , Smooth data changes can be made. Further, each register 230 of the scan chain register unit 175A has a holding circuit 17, and can smoothly shift to and return to the power gating state.

(Embodiment 3)
In the present embodiment, the details of the display unit 110 described in the first embodiment and the second embodiment will be described.

<Display panel configuration example>
FIG. 20 is a block diagram illustrating a configuration example of the display unit 110.

The display unit 110 has a pixel array 111. Further, the display unit 110 may include a gate driver GD or a source driver SD.

<< Pixel array 111 >>
The pixel array 111 scans a group of a plurality of pixels 702 (i, 1) to a pixel 702 (i, n) and another group of a plurality of pixels 702 (1, j) to a pixel 702 (m, j). It has a line G1 (i) and. Further, it has a scanning line G2 (i), a wiring CSCOM, a wiring ANO, and a signal line S2 (j). Note that i is an integer of 1 or more and m or less, j is an integer of 1 or more and n or less, and m and n are integers of 1 or more.

A group of plurality of pixels 702 (i, 1) to pixel 702 (i, n) includes pixel 702 (i, j), and a group of plurality of pixels 702 (i, 1) to pixel 702 (i, n). It is arranged in the row direction (the direction indicated by the arrow R1 in the figure).

The plurality of pixels 702 (1, j) to the pixels 702 (m, j) in the other group includes the pixels 702 (i, j), and the plurality of pixels 702 (1, j) to the pixels 702 (in the other group). m, j) are arranged in the column direction (direction indicated by the arrow C1 in the figure) intersecting the row direction.

The scanning lines G1 (i) and the scanning lines G2 (i) are electrically connected to a group of a plurality of pixels 702 (i, 1) to pixels 702 (i, n) arranged in the row direction.

Another group of plurality of pixels 702 (1, j) to pixels 702 (m, j) arranged in the column direction are electrically connected to the signal line S1 (j) and the signal line S2 (j). ..

<< Gate Driver GD >>
The gate driver GD has a function of supplying a selection signal based on control information.

As an example, it has a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher, based on control information. As a result, the moving image can be displayed smoothly.

For example, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, preferably less than once a minute, based on control information. This makes it possible to display a still image with flicker suppressed.

<< Source driver SD, Source driver SD1, Source driver SD2 >>
The source driver SD includes a source driver SD1 and a source driver SD2. The source driver SD1 and the source driver SD2 have a function of supplying a data signal based on the signal from the controller IC 115.

The source driver SD1 has a function of generating a data signal to be supplied to a pixel circuit electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, the liquid crystal display element can be driven.

The source driver SD2 generates a data signal to be supplied to a pixel circuit electrically connected to another display element (hereinafter, also referred to as a second display element) that displays using a method different from that of one display element. It has a function to do. For example, an organic EL element can be driven.

For example, various sequential circuits such as shift registers can be used for the source driver SD.

For example, an integrated circuit in which the source driver SD1 and the source driver SD2 are integrated can be used for the source driver SD. Specifically, an integrated circuit formed on a silicon substrate can be used for the source driver SD.

The source driver SD may be included in the same integrated circuit as the controller IC 115. Specifically, an integrated circuit formed on a silicon substrate can be used for the controller IC 115 and the source driver SD.

For example, the COG method or the COF method can be used to implement the integrated circuit as a terminal. Specifically, an integrated circuit can be mounted on a terminal by using an anisotropic conductive film.

《Pixel circuit》
FIG. 21 is a circuit diagram showing a configuration example of the pixel 702. The pixel 702 (i, j) has a function of driving the reflecting element 10a (i, j) and the light emitting element 10b (i, j). Thereby, for example, the reflecting element 10a and the light emitting element 10b that displays by using a method different from the reflecting element 10a can be driven by using a pixel circuit that can be formed by using the same process. .. Power consumption can be reduced by performing display using the reflection type display element and the reflection element 10a. Alternatively, the image can be satisfactorily displayed with high contrast in an environment where the outside light is bright. By displaying using the display element that emits light and the light emitting element 10b, the image can be displayed satisfactorily in a dark environment.

The pixels 702 (i, j) are electrically connected to the signal line S1 (j), the signal line S2 (j), the scanning line G1 (i), the scanning line G2 (i), the wiring CSCOM, and the wiring ANO.

Pixels 702 (i, j) include a switch SW1, a capacitive element C11, a switch SW2, a transistor M, and a capacitive element C12.

A transistor having a gate electrode electrically connected to the scanning line G1 (i) and a first electrode electrically connected to the signal line S1 (j) can be used for the switch SW1.

The capacitive element C11 has a first electrode electrically connected to the second electrode of the transistor used for the switch SW1 and a second electrode electrically connected to the wiring CSCOM.

A transistor having a gate electrode electrically connected to the scanning line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2.

The transistor M has a gate electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode electrically connected to the wiring ANO.

The transistor M may have a first gate electrode and a second gate electrode. The first gate electrode and the second gate electrode may be electrically connected. It is preferable that the first gate electrode and the second gate electrode have regions that overlap each other with the semiconductor film interposed therebetween.

The capacitive element C12 has a first electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a second electrode electrically connected to the first electrode of the transistor M. ..

The first electrode of the reflecting element 10a (i, j) is electrically connected to the second electrode of the transistor used for the switch SW1. Further, the second electrode of the reflecting element 10a (i, j) is electrically connected to the wiring VCOM1. As a result, the reflective element 10a (i, j) can be driven.

The first electrode of the light emitting element 10b (i, j) is electrically connected to the second electrode of the transistor M, and the second electrode of the light emitting element 10b (i, j) is electrically connected to the wiring VCOM2. .. Thereby, the light emitting element 10b (i, j) can be driven.

<Top view of display panel>
FIG. 22 is a diagram illustrating the configuration of the display unit 110. 22 (A) is a top view of the display unit 110, and FIG. 22 (B) is a top view illustrating a part of the pixels of the display unit 110 shown in FIG. 22 (A). 22 (C) is a schematic diagram illustrating the configuration of the pixels shown in FIG. 22 (B).

In FIG. 22A, the source driver SD and the terminal 519B are arranged on the flexible printed circuit board FPC1.

In FIG. 22C, the pixel 702 (i, j) includes a reflecting element 10a (i, j) and a light emitting element 10b (i, j).

<Cross section of display panel>
23 and 24 are cross-sectional views illustrating the configuration of the display unit 110. 23 (A) is a cross-sectional view taken along the cutting lines X1-X2, cutting lines X3-X4, and cutting lines X5-X6 of FIG. 22 (A), and FIG. 23 (B) is one of FIGS. 23 (A). It is a figure explaining a part.

24 (A) is a cross-sectional view taken along the cutting lines X7-X8 and X9-X10 of FIG. 22 (B), and FIG. 24 (B) is a diagram illustrating a part of FIG. 24 (A). be.

Hereinafter, each component of the display unit 110 will be described with reference to FIGS. 23 and 24.

<< Board 570 >>
A material having heat resistance sufficient to withstand the heat treatment during the manufacturing process can be used for the substrate 570 and the like. For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 570. Specifically, a material polished to a thickness of about 0.1 mm can be used.

For example, the area of the 6th generation (1500 mm × 1850 mm), the 7th generation (1870 mm × 2200 mm), the 8th generation (2200 mm × 2400 mm), the 9th generation (2400 mm × 2800 mm), the 10th generation (2950 mm × 3400 mm), etc. A large glass substrate can be used for the substrate 570 and the like. This makes it possible to manufacture a large display device.

An organic material, an inorganic material, or a composite material such as an organic material and an inorganic material can be used for the substrate 570 or the like. For example, an inorganic material such as glass, ceramics, or metal can be used for the substrate 570 or the like.

Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire and the like can be used for the substrate 570 and the like. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used for the substrate 570 or the like. For example, a silicon oxide film, a silicon nitride film, a silicon nitride film, an aluminum oxide film, or the like can be used for the substrate 570 or the like. Stainless steel, aluminum or the like can be used for the substrate 570 or the like.

For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used as the substrate 570 or the like. As a result, the semiconductor element can be formed on the substrate 570 or the like.

For example, an organic material such as resin, resin film or plastic can be used for the substrate 570 or the like. Specifically, a resin film or resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate or acrylic resin can be used for the substrate 570 and the like.

For example, a composite material in which a film such as a metal plate, a thin glass plate, or an inorganic material is bonded to a resin film or the like can be used for the substrate 570 or the like. For example, a composite material in which a fibrous or particulate metal, glass, or an inorganic material is dispersed in a resin film can be used for the substrate 570 or the like. For example, a composite material in which a fibrous or particulate resin or an organic material is dispersed in an inorganic material can be used for the substrate 570 or the like.

Further, a single-layer material or a material in which a plurality of layers are laminated can be used for the substrate 570 and the like. For example, a material in which a base material and an insulating film or the like that prevents the diffusion of impurities contained in the base material are laminated can be used for the substrate 570 or the like. Specifically, a material obtained by laminating one or more films selected from glass and a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like that prevents the diffusion of impurities contained in the glass is used for the substrate 570 or the like. be able to. Alternatively, a material in which a silicon oxide film, a silicon nitride film, a silicon nitride film, or the like that prevents the diffusion of the resin and impurities that permeate the resin can be laminated can be used for the substrate 570 or the like.

Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate or acrylic resin, a resin plate or a laminated material can be used for the substrate 570 and the like.

Specifically, a material containing a resin having a siloxane bond such as polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or silicone can be used for the substrate 570 and the like.

Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), acrylic resin and the like can be used for the substrate 570 and the like. Alternatively, a cycloolefin polymer (COP), a cycloolefin copolymer (COC), or the like can be used.

Further, paper, wood, or the like can be used for the substrate 570 or the like.

For example, a flexible substrate can be used as the substrate 570 or the like.

A method of directly forming a transistor, a capacitive element, or the like on a substrate can be used. Further, for example, a method can be used in which a transistor or a capacitive element or the like is formed on a substrate for a process having heat resistance to heat applied during the manufacturing process, and the formed transistor or the capacitive element or the like is transposed to the substrate 570 or the like. Thereby, for example, a transistor, a capacitive element, or the like can be formed on a flexible substrate.

<< Board 770 >>
For example, a translucent material can be used for the substrate 770. Specifically, a material selected from the materials that can be used for the substrate 570 can be used for the substrate 770.

For example, aluminosilicate glass, tempered glass, chemically tempered glass, sapphire, or the like can be suitably used for the substrate 770 arranged on the side closer to the user of the display panel. This makes it possible to prevent the display panel from being damaged or scratched due to use.

Further, for example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 770. Specifically, a polished substrate can be used to reduce the thickness. As a result, the functional film 770D can be arranged close to the reflecting element 10a (i, j). As a result, blurring of the image can be reduced and the image can be displayed clearly.

<< Structure KB1 >>
For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structure KB1 and the like. Thereby, a predetermined interval can be provided between the configurations sandwiching the structure KB1 and the like.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, etc., or a composite material of a plurality of resins selected from these can be used for the structure KB1. Further, it may be formed by using a material having photosensitivity.

<< Encapsulant 705 >>
An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used as a sealing material 705 or the like.

For example, an organic material such as a heat-meltable resin or a curable resin can be used for the sealing material 705 and the like.

For example, organic materials such as reaction-curable adhesives, photo-curable adhesives, thermosetting adhesives and / and anaerobic adhesives can be used for the encapsulant 705 and the like.

Specifically, an adhesive containing an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a polyimide resin, an imide resin, a PVC (polyvinyl chloride) resin, a PVB (polyvinyl butyral) resin, an EVA (ethylene vinyl acetate) resin and the like. Can be used as a sealing material 705 or the like.

<< Bonding layer 505 >>
For example, a material that can be used for the sealing material 705 can be used for the bonding layer 505.

<< Insulating film 521, Insulating film 518 >>
For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating films 521, 518, and the like.

Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic nitride film, or the like, or a laminated material in which a plurality of laminated materials selected from these are laminated can be used for the insulating films 521, 518, and the like. For example, a silicon oxide film, a silicon nitride film, a silicon nitride film, an aluminum oxide film, or a film containing a laminated material selected from these can be used as the insulating film 521, 518, or the like.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, etc., or a laminated material or composite material of a plurality of resins selected from these can be used for the insulating film 521, 518, etc. can. Further, it may be formed by using a material having photosensitivity.

Thereby, for example, it is possible to flatten the step derived from various structures overlapping with the insulating films 521 and 518.

<< Insulating film 528 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 528 and the like. Specifically, a film containing a polyimide having a thickness of 1 μm can be used for the insulating film 528.

<< Insulating film 501A >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501A. Further, for example, a material having a function of supplying hydrogen can be used for the insulating film 501A.

Specifically, a material in which a material containing silicon and oxygen and a material containing silicon and nitrogen are laminated can be used for the insulating film 501A. For example, a material having a function of releasing hydrogen by heating or the like and supplying the released hydrogen to another configuration can be used for the insulating film 501A. Specifically, a material having a function of releasing hydrogen taken in during the manufacturing process by heating or the like and supplying it to another configuration can be used for the insulating film 501A.

For example, a film containing silicon and oxygen formed by a chemical vapor deposition method using silane or the like as a raw material gas can be used for the insulating film 501A.

Specifically, a material obtained by laminating a material having a thickness of 200 nm or more and 600 nm or less containing silicon and oxygen and a material having a thickness of about 200 nm containing silicon and nitrogen can be used for the insulating film 501A.

<< Insulation film 501C >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. This makes it possible to suppress the diffusion of impurities into the pixel circuit, the second display element, or the like.

For example, a 200 nm thick film containing silicon, oxygen and nitrogen can be used as the insulating film 501C.

<< Intermediate film 754A, Intermediate film 754B, Intermediate film 754C >>
For example, a film having a thickness of 10 nm or more and 500 nm or less, preferably 10 nm or more and 100 nm or less can be used for the intermediate film 754A, the intermediate film 754B or the intermediate film 754C. In the present specification, the intermediate film 754A, the intermediate film 754B or the intermediate film 754C is referred to as an intermediate film.

For example, a material having the function of permeating or supplying hydrogen can be used for the interlayer film.

For example, a conductive material can be used for the interlayer film.

For example, a translucent material can be used for the interlayer film.

Specifically, a material containing indium and oxygen, a material containing indium, gallium, zinc and oxygen, a material containing indium, tin and oxygen and the like can be used for the interlayer film. In addition, these materials have a function of permeating hydrogen.

Specifically, a film having a thickness of 50 nm or a film having a thickness of 100 nm containing indium, gallium, zinc and oxygen can be used as the intermediate film.

A material in which a film that functions as an etching stopper is laminated can be used as the interlayer film. Specifically, a laminated material in which a film having a thickness of 50 nm containing indium, gallium, zinc and oxygen and a film having a thickness of 20 nm containing indium, tin and oxygen are laminated in this order can be used as an intermediate film. can.

<< Wiring, terminals, conductive film >>
A material having conductivity can be used for wiring and the like. Specifically, the material having conductivity is a signal line S1 (j), a signal line S2 (j), a scanning line G1 (i), a scanning line G2 (i), a wiring CSCOM, a wiring ANO, a terminal 519B, and a terminal. It can be used for 519C, conductive film 511B, conductive film 511C and the like.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for wiring or the like.

Specifically, metal elements selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for wiring and the like. can. Alternatively, the above-mentioned alloy containing a metal element or the like can be used for wiring or the like. In particular, an alloy of copper and manganese is suitable for microfabrication using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a titanium film is laminated on a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is laminated on the titanium film and a titanium film is formed on the titanium film can be used for wiring and the like. ..

Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide to which gallium is added can be used for wiring and the like.

Specifically, a film containing graphene or graphite can be used for wiring or the like.

For example, a film containing graphene can be formed by forming a film containing graphene oxide and reducing the film containing graphene oxide. Examples of the method of reduction include a method of applying heat and a method of using a reducing agent.

For example, a film containing metal nanowires can be used for wiring and the like. Specifically, nanowires containing silver can be used.

Specifically, a conductive polymer can be used for wiring and the like.

For example, the conductive material ACF1 can be used to electrically connect the terminal 519B and the flexible printed circuit board FPC1.

<< Reflective element 10a (i, j) >>
The reflection element 10a (i, j) is a display element having a function of controlling the reflection of light, and for example, a liquid crystal element, an electrophoresis element, a MEMS display element, or the like can be used. Specifically, a reflective liquid crystal display element can be used for the reflective element 10a (i, j). By using the reflective display element, the power consumption of the display panel can be suppressed.

For example, IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, FFS (Fringe Field Switching) mode, ASM (Axially Cymetric Specified Micro-cell) mode, OCB (Optical Liquid Crystal) mode. A liquid crystal element that can be driven by using a driving method such as a Crystal) mode or an AFLC (Atiferroelectric Liquid Crystal) mode can be used.

Further, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ECB (Electrical Alignment Birefringence) mode, and a CB (Electrical Alignment Birefringence) mode. A liquid crystal element that can be driven by using a driving method such as the (Advanced Super-View) mode can be used.

The reflective element 10a (i, j) has an electrode 751 (i, j), an electrode 752, and a layer 753 containing a liquid crystal material. Layer 753 contains a liquid crystal material whose orientation can be controlled using the voltage between the electrodes 751 (i, j) and the electrodes 752. For example, an electric field in the thickness direction (also referred to as a vertical direction) of the layer 753 and a direction intersecting the vertical direction (also referred to as a horizontal direction or an oblique direction) can be used as an electric field for controlling the orientation of the liquid crystal material.

For example, a thermotropic liquid crystal, a low molecular weight liquid crystal, a polymer liquid crystal, a polymer dispersion type liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used for the layer 753. Alternatively, a liquid crystal material exhibiting a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

The dielectric constant of the liquid crystal layer is 2 or more and 3.8 or less, and the resistivity of the liquid crystal layer is 1.0 × 10 ¹⁴ (Ω · cm) or more and 1.0 × 10 ¹⁵ (Ω · cm) or less. This is preferable because IDS drive is possible and the power consumption of the display device 100 can be reduced.

For example, a material used for wiring or the like can be used for the electrode 751 (i, j). Specifically, the reflective film can be used for the electrode 751 (i, j). For example, a material obtained by laminating a conductive film having a translucent property and a reflective film having an opening can be used for the electrode 751 (i, j).

For example, a conductive material can be used for the electrode 752. A material having translucency for visible light can be used for the electrode 752.

For example, a conductive oxide, a metal film thin enough to transmit light, or metal nanowires can be used for the electrode 752.

Specifically, a conductive oxide containing indium can be used for the electrode 752. Alternatively, a metal thin film having a thickness of 1 nm or more and 10 nm or less can be used for the electrode 752. Further, metal nanowires containing silver can be used for the electrode 752.

Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, zinc oxide added with aluminum, and the like can be used for the electrode 752.

《Reflective film》
For example, a material that reflects visible light can be used for the reflective film. Specifically, a material containing silver can be used for the reflective film. For example, a material containing silver, palladium, or the like, or a material containing silver, copper, or the like can be used for the reflective film.

The reflective film reflects, for example, the light transmitted through the layer 753. As a result, the reflective element 10a can be made into a reflective display element. Further, for example, a material having irregularities on the surface can be used for the reflective film. As a result, the incident light can be reflected in various directions to display a white color.

For example, electrodes 751 (i, j) and the like can be used for the reflective film.

For example, a film having a region sandwiched between the layer 753 and the electrode 751 (i, j) can be used as the reflective film. Alternatively, when the electrode 751 (i, j) has translucency, a film having a region overlapping the layer 753 with the electrode 751 (i, j) interposed therebetween can be used as the reflective film.

The reflective film preferably has, for example, a region that does not block the light emitted by the light emitting element 10b (i, j). For example, it is preferable to use a shape having one or more openings 751H for the reflective film.

Shapes such as polygons, quadrangles, ellipses, circles or crosses can be used for the opening 751H. Further, elongated streaks, slits, and checkered patterns can be used for the opening 751H.

If the value of the ratio of the total area of the opening 751H to the total area of the non-opening is too large, the display using the reflecting element 10a (i, j) becomes dark.

Further, if the value of the ratio of the total area of the opening 751H to the total area of the non-opening is too small, the display using the light emitting element 10b (i, j) becomes dark.

FIG. 25 is a schematic diagram illustrating the shape of the reflective film that can be used for the pixels of the display unit 110.

For example, the opening 751H of the pixel 702 (i, j + 1) adjacent to the pixel 702 (i, j) passes through the opening 751H of the pixel 702 (i, j) in the row direction (direction indicated by the arrow R1 in the figure). It is not arranged on a straight line extending to (see FIG. 25 (A)). Alternatively, for example, the opening 751H of the pixel 702 (i + 1, j) adjacent to the pixel 702 (i, j) passes through the opening 751H of the pixel 702 (i, j) in the column direction (arrow C1 in the drawing). It is not arranged on a straight line extending in the direction shown (see FIG. 25B).

For example, the opening 751H of the pixel 702 (i, j + 2) is arranged on a straight line extending in the row direction through the opening 751H of the pixel 702 (i, j) (see FIG. 25A). Further, the opening 751H of the pixel 702 (i, j + 1) is arranged on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i, j + 2). Will be set up.

Alternatively, for example, the opening 751H of the pixel 702 (i + 2, j) is arranged on a straight line extending in the column direction through the opening 751H of the pixel 702 (i, j) (see FIG. 25B). .. Further, for example, the opening 751H of the pixel 702 (i + 1, j) is a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i + 2, j). Arranged on top.

As a result, the second display element having a region overlapping the opening of another pixel adjacent to one pixel can be kept away from the second display element having a region overlapping the opening of one pixel. Alternatively, a display element that displays a color different from the color displayed by the second display element of one pixel can be arranged on the second display element of another pixel adjacent to one pixel. Alternatively, it is possible to reduce the difficulty of arranging a plurality of display elements displaying different colors adjacent to each other.

In addition, for example, a material having a shape such that the end portion is cut off can be used for the reflective film so that the region 751E that does not block the light emitted by the light emitting element 10b (i, j) is formed. See FIG. 25 (C). Specifically, the electrode 751 (i.j) whose end is cut off so that the row direction (direction indicated by the arrow C1 in the figure) is shortened can be used for the reflective film.

<< Alignment film AF1, Alignment film AF2 >>
For example, a material containing polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. Specifically, a material formed by a rubbing treatment or a photo-alignment technique so that the liquid crystal material is oriented in a predetermined direction can be used.

For example, a film containing a soluble polyimide can be used for the alignment film AF1 or the alignment film AF2. Thereby, the temperature required for forming the alignment film AF1 or the alignment film AF2 can be lowered. As a result, it is possible to reduce damage to other configurations when forming the alignment film AF1 or the alignment film AF2.

<< Colored film CF1, Colored film CF2 >>
A material that transmits light of a predetermined color can be used for the colored film CF1 or the colored film CF2. Thereby, the colored film CF1 or the colored film CF2 can be used, for example, as a color filter. For example, a material that transmits blue, green, or red light can be used for the colored film CF1 or the colored film CF2. Further, a material that transmits yellow light, white light, or the like can be used for the colored film CF1 or the colored film CF2.

A material having a function of converting the irradiated light into light of a predetermined color can be used for the colored film CF2. Specifically, the quantum dots can be used for the colored film CF2. As a result, it is possible to display with high color purity.

<< Shading film BM >>
A material that obstructs the transmission of light can be used for the light-shielding film BM. Thereby, the light-shielding film BM can be used for, for example, a black matrix.

<< Insulating film 771 >>
For example, polyimide, epoxy resin, acrylic resin and the like can be used for the insulating film 771.

<< Functional film 770P, Functional film 770D >>
For example, an antireflection film, a polarizing film, a retardation film, a light diffusing film, a light collecting film, or the like can be used for the functional film 770P or the functional film 770D.

Specifically, a film containing a dichroic dye can be used for the functional film 770P or the functional film 770D. Alternatively, a material having a columnar structure having an axis along the direction intersecting the surface of the substrate can be used for the functional film 770P or the functional film 770D. As a result, light can be easily transmitted in the direction along the axis and easily scattered in other directions.

Further, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the generation of scratches due to use, and the like can be used for the functional film 770P.

Specifically, a circularly polarizing film can be used for the functional film 770P. Further, the light diffusion film can be used for the functional film 770D.

<< Light emitting element 10b (i, j) >>
For example, an organic EL element, an inorganic EL element, a light emitting diode, or the like can be used for the light emitting element 10b (i, j).

The light emitting element 10b (i, j) includes an electrode 551 (i, j), an electrode 552, and a layer 553 (j) containing a light emitting material.

For example, a luminescent organic compound can be used for layer 553 (j).

For example, quantum dots can be used for layer 553 (j). As a result, the half-value width is narrow and brightly colored light can be emitted.

For example, a laminated material laminated to emit blue light, a laminated material laminated to emit green light, a laminated material laminated to emit red light, or the like is provided in layer 553 ( It can be used for j).

For example, a strip-shaped laminated material long in the column direction along the signal line S2 (j) can be used for the layer 553 (j).

Further, for example, a laminated material laminated so as to emit white light can be used for the layer 553 (j). Specifically, other than a layer containing a luminescent material containing a fluorescent material that emits blue light and a layer containing a material other than the fluorescent material that emits green and red light or a fluorescent material that emits yellow light. A laminated material obtained by laminating a layer containing the material of the above can be used for the layer 553 (j).

For example, a material that can be used for wiring or the like can be used for the electrode 551 (i, j).

For example, a material having transparency for visible light selected from materials that can be used for wiring and the like can be used for the electrode 551 (i, j).

Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used in the electrode 551 (i, j). Can be used for. Alternatively, a metal film thin enough to transmit light can be used for the electrode 551 (i, j). Alternatively, a metal film that transmits a part of the light and reflects the other part of the light can be used for the electrode 551 (i, j). As a result, the microcavity structure can be provided in the light emitting element 10b (i, j). As a result, light having a predetermined wavelength can be extracted more efficiently than light having another wavelength.

For example, a material that can be used for wiring or the like can be used for the electrode 552. Specifically, a material having reflectivity for visible light can be used for the electrode 552.

<< Gate Driver GD >>
Various sequential circuits such as shift registers can be used for the gate driver GD. For example, a transistor MD, a capacitive element, or the like can be used for the gate driver GD. Specifically, a transistor that can be used for the switch SW1 or a transistor having a semiconductor film that can be formed in the same process as the transistor M can be used.

For example, a configuration different from the transistor that can be used for the switch SW1 can be used for the transistor MD. Specifically, a transistor having a conductive film 524 can be used for the transistor MD.

The same configuration as that of the transistor M can be used for the transistor MD.

《Transistor》
For example, semiconductor films that can be formed in the same process can be used for gate drivers, source drivers, and transistors in pixel circuits.

For example, a bottom gate type transistor or a top gate type transistor can be used as a gate driver, a source driver transistor, or a pixel circuit transistor.

For example, a transistor (OS transistor) that uses an oxide semiconductor as a semiconductor material can be used. When an oxide semiconductor is used as the semiconductor material, it is preferable to have a CAC (Cloud-Aligned Complex) -OS configuration.

The CAC-OS is, for example, a composition of a material in which the elements constituting the oxide semiconductor are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof. In the following, in the oxide semiconductor, one or more metal elements are unevenly distributed, and the region having the metal elements is mixed in a size of 0.5 nm or more and 10 nm or less, or 1 nm or more and 2 nm or less, or a size close to the same. The state is also called a mosaic or a patch.

The oxide semiconductor preferably contains at least indium. In particular, it preferably contains indium and zinc. Also, in addition to them, aluminum, gallium, ittrium, copper, vanadium, berylium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, etc. One or more selected from the above may be included.

For example, CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide may be particularly referred to as CAC-IGZO in CAC-OS) is an indium oxide (hereinafter, InO). _X1 (X1 is a real number larger than 0), or indium zinc oxide (hereinafter, In _X2 Zn _Y2 O _Z2 (X2, Y2, and Z2 are real numbers larger than 0)) and gallium. With an oxide (hereinafter, GaO _X3 (X3 is a real number larger than 0)) or gallium zinc oxide (hereinafter, Ga _X4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are real numbers larger than 0)). _{In _ _ _} be.

That is, the CAC-OS is a composite oxide semiconductor having a structure in which a region containing GaO _X3 as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component are mixed. In the present specification, for example, the atomic number ratio of In to the element M in the first region is larger than the atomic number ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the region 2.

In addition, IGZO is a common name and may refer to one compound consisting of In, Ga, Zn, and O. As a typical example, it is represented by InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (-1≤x0≤1, m0 is an arbitrary number). Crystalline compounds can be mentioned.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have a c-axis orientation and are connected without orientation on the ab plane.

On the other hand, CAC-OS relates to the material composition of oxide semiconductors. CAC-OS is a region that is observed in the form of nanoparticles mainly composed of Ga in a material structure containing In, Ga, Zn, and O, and nanoparticles mainly composed of In. The regions observed in the shape are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary element.

The CAC-OS does not include a laminated structure of two or more types of films having different compositions. For example, it does not include a structure consisting of two layers, a film containing In as a main component and a film containing Ga as a main component.

In some cases, a clear boundary cannot be observed between the region containing GaO _X3 as the main component and the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as the main component.

Instead of gallium, choose from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium. When one or more of these species are contained, CAC-OS has a region observed in the form of nanoparticles mainly composed of the metal element and a nano portion containing In as a main component. The regions observed in the form of particles refer to a configuration in which the regions are randomly dispersed in a mosaic pattern.

The CAC-OS can be formed by a sputtering method, for example, under the condition that the substrate is not intentionally heated. When the CAC-OS is formed by the sputtering method, one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as the film forming gas. good. Further, the lower the flow rate ratio of the oxygen gas to the total flow rate of the film-forming gas at the time of film formation is preferable, and for example, the flow rate ratio of the oxygen gas is preferably 0% or more and less than 30%, preferably 0% or more and 10% or less. ..

CAC-OS is characterized by the fact that no clear peak is observed when measured using the θ / 2θ scan by the Out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, from the X-ray diffraction, it can be seen that the orientation of the measurement region in the ab plane direction and the c-axis direction is not observed.

Further, CAC-OS has an electron beam diffraction pattern obtained by irradiating an electron beam having a probe diameter of 1 nm (also referred to as a nanobeam electron beam) in a ring-shaped high-luminance region and a plurality of bright regions in the ring region. A point is observed. Therefore, from the electron diffraction pattern, it can be seen that the crystal structure of CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in CAC-OS in In-Ga-Zn oxide, a region containing GaO _X3 as a main component by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). And, it can be confirmed that the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component is unevenly distributed and has a mixed structure.

CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of the IGZO compound. That is, the CAC-OS is phase-separated into a region containing GaO _X3 or the like as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component, and a region containing each element as a main component. Has a mosaic-like structure.

Here, the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component is a region having higher conductivity than the region in which GaO _X3 or the like is the main component. That is, the conductivity as an oxide semiconductor is exhibited by the carrier flowing through the region where In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component. Therefore, a high field effect mobility (μ) can be realized by distributing the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component in the oxide semiconductor in a cloud shape.

On the other hand, the region in which GaO _X3 or the like is the main component is a region having higher insulating properties than the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component. That is, since the region containing GaO _X3 or the like as the main component is distributed in the oxide semiconductor, leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulation property caused by GaO _X3 and the like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, so that the insulation is high. _On current (Ion) and high field effect mobility (μ) can be achieved.

Further, the semiconductor element using CAC-OS has high reliability. Therefore, CAC-OS is most suitable for various semiconductor devices such as displays.

For example, a transistor including an oxide semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B can be used for the switch SW1 (see FIG. 24B). The insulating film 506 includes a region sandwiched between the oxide semiconductor film 508 and the conductive film 504.

The conductive film 504 includes a region that overlaps with the oxide semiconductor film 508. The conductive film 504 has the function of a gate electrode. The insulating film 506 has the function of a gate insulating film.

The conductive film 512A and the conductive film 512B are electrically connected to the oxide semiconductor film 508. The conductive film 512A has either the function of the source electrode or the function of the drain electrode, and the conductive film 512B has the function of the source electrode or the function of the drain electrode.

Further, a transistor having a conductive film 524 can be used as a gate driver, a source driver, or a transistor in a pixel circuit. The conductive film 524 includes a region sandwiching the oxide semiconductor film 508 with the conductive film 504. The insulating film 516 includes a region sandwiched between the conductive film 524 and the oxide semiconductor film 508. Further, for example, the conductive film 524 is electrically connected to a wiring that supplies the same potential as the conductive film 504.

For example, a conductive film in which a film having a thickness of 10 nm containing tantalum and nitrogen and a film having a thickness of 300 nm containing copper is laminated can be used for the conductive film 504. The copper-containing film has a region between the insulating film 506 and the tantalum and nitrogen-containing film.

For example, a material in which a film having a thickness of 400 nm containing silicon and nitrogen and a film having a thickness of 200 nm containing silicon, oxygen and nitrogen are laminated can be used for the insulating film 506. The film containing silicon and nitrogen includes a region sandwiching the film containing silicon, oxygen and nitrogen between the film and the oxide semiconductor film 508.

For example, a film having a thickness of 25 nm containing indium, gallium, and zinc can be used for the oxide semiconductor film 508.

For example, a conductive film in which a film having a thickness of 50 nm containing tungsten, a film having a thickness of 400 nm containing aluminum, and a film having a thickness of 100 nm containing titanium are laminated in this order is formed on the conductive film 512A or 512B. Can be used. The film containing tungsten includes a region in contact with the oxide semiconductor film 508.

It should be noted that this embodiment can be appropriately combined with other embodiments shown in the present specification.

26 (A) is a bottom view illustrating a part of the pixels of the display panel shown in FIG. 22 (B), and FIG. 26 (B) omits a part of the configuration shown in FIG. 26 (A). It is a bottom view to explain.

(Embodiment 4)
In the present embodiment, a display device to which the touch sensor unit is applied to the display unit of the above-described embodiment will be described.

FIG. 27 is a block diagram illustrating a configuration of a display device 100 including a touch sensor unit 120 and a display unit 110. FIG. 28A is a top view of the display device 100. FIG. 28B is a schematic diagram illustrating a part of the input unit of the display device 100.

The touch sensor unit 120 includes a sensor array 121, a TS driver 126, and a sense circuit 127 (see FIG. 27).

The sensor array 121 includes an area that overlaps with the pixel array 111 of the display unit 110. The sensor array 121 has a function of detecting an object close to an area overlapping the pixel array 111.

The sensor array 121 includes a group of detection elements 775 (g, 1) to detection elements 775 (g, q) and another group of detection elements 775 (1, h) to detection elements 775 (p, h). Have. Note that g is an integer of 1 or more and p or less, h is an integer of 1 or more and q or less, and p and q are integers of 1 or more.

The group of detection elements 775 (g, 1) to detection element 775 (g, q) includes the detection element 775 (g, h) and are arranged in the row direction (direction indicated by arrow R2 in the figure).

Further, another group of detection elements 775 (1, h) to detection element 775 (p, h) includes the detection element 775 (g, h), and the column direction intersecting the row direction (arrow C2 in the figure). It is arranged in the direction shown).

A group of detection elements 775 (g, 1) to detection elements 775 (g, q) arranged in the row direction include an electrode SE (g) electrically connected to the control line SL (g) (FIG. 28 (B)).

Another group of detection elements 775 (1, h) to detection elements 775 (p, h) arranged in the row direction have electrodes ME (h) electrically connected to the detection signal line ML (h). Includes (see FIG. 28 (B)).

The electrode SE (g) and the electrode ME (h) are preferably provided with translucency.

The wiring DRL (g) has a function of supplying a control signal.

The wiring SNL (h) has a function of supplying a detection signal.

The electrode ME (h) is arranged so as to form an electric field with the electrode SE (g). When an object such as a finger comes close to the sensor array 121, the electric field is shielded, and the detection element 775 (g, h) supplies a detection signal.

The TS driver 126 is electrically connected to the wiring DRL (g) and has a function of supplying a control signal. For example, a rectangular wave, a sawtooth wave, a triangular wave, or the like can be used as a control signal.

The sense circuit 127 is electrically connected to the wiring SNL (h) and has a function of supplying a detection signal based on a change in the potential of the wiring SNL (h). The detection signal includes, for example, position information.

The detection signal is supplied to the controller IC 115. The controller IC 115 supplies information corresponding to the detection signal to the host 140, and the image displayed on the pixel array 111 is updated.

29 and 30 are diagrams illustrating the configuration of the display device 100. 29 (A) is a cross-sectional view taken along the cutting lines X1-X2, cutting lines X3-X4, and cutting lines X5-X6 of FIG. 28 (A), and FIG. 29 (B) is one of FIGS. 29 (A). It is sectional drawing explaining the structure of a part.

FIG. 30 is a cross-sectional view taken along the cutting lines X7-X8, X9-X10, and X11-X12 of FIG. 28 (A).

The display device 100 is different from, for example, the display unit 110 of the second embodiment in that it includes a functional layer 720 and has a top gate type transistor. Here, the different parts will be described in detail, and the above description will be used for the parts where the same configuration can be used.

The functional layer 720 includes, for example, a region surrounded by a substrate 770, an insulating film 501C, and a sealing material 705 (see FIG. 29).

The functional layer 720 includes, for example, a wiring DRL (g), a wiring SNL (h), and a detection element 775 (g, h).

Between the wiring DRL (g) and the electrode 752, or between the wiring SNL (h) and the electrode 752, 0.2 μm or more and 16 μm or less, preferably 1 μm or more and 8 μm or less, more preferably 2.5 μm or more and 4 μm or less. Provide an interval of.

Further, the display device 100 has a conductive film 511D (see FIG. 30).

A conductive material CP or the like can be arranged between the wiring DRL (g) and the conductive film 511D, and the wiring DRL (g) and the conductive film 511D can be electrically connected. Alternatively, a conductive material CP or the like can be arranged between the wiring SNL (h) and the conductive film 511D, and the wiring SNL (h) and the conductive film 511D can be electrically connected. For example, a material that can be used for wiring or the like can be used for the conductive film 511D.

Further, the display device 100 has a terminal 519D (see FIG. 30). The terminal 519D is electrically connected to the conductive film 511D.

The terminal 519D includes a conductive film 511D and an interlayer film 754D, and the interlayer film 754D includes a region in contact with the conductive film 511D.

For example, a material that can be used for wiring or the like can be used for the terminal 519D. Specifically, the same configuration as the terminal 519B or the terminal 519C can be used for the terminal 519D.

For example, the conductive material ACF2 can be used to electrically connect the terminal 519D and the flexible printed circuit board FPC2. Thereby, for example, the control signal can be supplied to the wiring DRL (g) by using the terminal 519D. Alternatively, the detection signal can be supplied from the wiring SNL (h) using the terminal 519D.

The transistor, transistor M, and transistor MD that can be used in the switch SW1 include a conductive film 504 having a region overlapping with the insulating film 501C, and an oxide semiconductor film 508 having a region sandwiched between the insulating film 501C and the conductive film 504. , Equipped with. The conductive film 504 has a function of a gate electrode (see FIG. 29B).

The oxide semiconductor film 508 has a first region 508A and a second region 508B that do not overlap the conductive film 504, and a third region 508C that overlaps the conductive film 504 between the first region 508A and the second region 508B. And.

The transistor MD includes an insulating film 506 between the third region 508C and the conductive film 504. The insulating film 506 has the function of a gate insulating film.

The first region 508A and the second region 508B have a lower resistivity than the third region 508C, and have the function of the source region or the function of the drain region.

For example, the oxide semiconductor film can be subjected to plasma treatment using a gas containing a rare gas to form the first region 508A and the second region 508B on the oxide semiconductor film 508.

Further, for example, the conductive film 504 can be used as a mask. As a result, the shape of a part of the third region 508C can be self-aligned with the shape of the end portion of the conductive film 504.

The transistor MD includes a conductive film 512A in contact with the first region 508A and a conductive film 512B in contact with the second region 508B. The conductive film 512A and the conductive film 512B have the function of a source electrode or a drain electrode.

For example, a transistor that can be formed in the same process as the transistor MD can be used for the transistor M.

(Embodiment 5)
The configuration of the input / output panel of one aspect of the present invention will be described with reference to FIGS. 31 and 32.

FIG. 31 is a diagram illustrating a configuration of an input / output panel according to an aspect of the present invention. FIG. 31 is a cross-sectional view of the pixels included in the input / output panel.

FIG. 32 is a diagram illustrating a configuration of an input / output panel according to an aspect of the present invention. 32 (A) is a cross-sectional view illustrating the configuration of the functional membrane of the input / output panel shown in FIG. 31, FIG. 32 (B) is a cross-sectional view illustrating the configuration of the input unit, and FIG. 32 (C) is a sectional view illustrating the configuration of the input unit. FIG. 32 (D) is a cross-sectional view illustrating the configuration of the second unit, and FIG. 32 (D) is a cross-sectional view illustrating the configuration of the first unit.

In the present specification, a variable having an integer of 1 or more as a value may be used as a code. For example, (p) containing a variable p having a value of one or more integers may be used as a part of a code for specifying any of the maximum p components. Further, for example, a variable m having a value of one or more integers and a variable (m, n) including the variable n may be used as a part of a code for specifying any of a maximum of m × n components.

The input / output panel 700TP3 described in this configuration example has pixels 702 (i, j) (see FIG. 31). Further, the input / output panel 700TP3 has a first unit 310, a second unit 320, an input unit 330, and a functional film 770P (see FIG. 32). The first unit 310 includes a functional layer 520 and the second unit 320 includes a functional layer 720.

<< Pixel 702 (i, j) >>
The pixel 702 (i, j) has a part of the functional layer 520, a first display element 750 (i, j), and a second display element 550 (i, j) (see FIG. 31). ..

The functional layer 520 includes a first conductive film, a second conductive film, an insulating film 501C, and a pixel circuit 530 (i, j). The pixel circuit 530 (i, j) (not shown) includes, for example, a transistor M. Further, the functional layer 520 may include an optical element 560, a coating film 565, and a lens 580. Further, the functional layer 520 may include an insulating film 528 and an insulating film 521. A material in which the insulating film 521A and the insulating film 521B are laminated can be used for the insulating film 521.

For example, a material having a refractive index of around 1.55 can be used for the insulating film 521A or the insulating film 521B. Alternatively, a material having a refractive index of around 1.6 can be used for the insulating film 521A or the insulating film 521B. Alternatively, acrylic resin or polyimide can be used for the insulating film 521A or the insulating film 521B.

The insulating film 501C comprises a region sandwiched between the first conductive film and the second conductive film, and the insulating film 501C includes an opening 591A.

The first conductive film is electrically connected to the first display element 750 (i, j). Specifically, it is electrically connected to the electrode 751 (i, j) of the first display element 750 (i, j). The electrode 751 (i, j) can be used as the first conductive film.

The second conductive film includes a region that overlaps with the first conductive film. The second conductive film is electrically connected to the first conductive film at the opening 591A. For example, the conductive film 512B can be used as the second conductive film. The second conductive film is electrically connected to the pixel circuit 530 (i, j). For example, a conductive film that functions as a source electrode or a drain electrode of the transistor used for the switch SW1 of the pixel circuit 530 (i, j) can be used as the second conductive film. By the way, the first conductive film electrically connected to the second conductive film in the opening 591A provided in the insulating film 501C can be referred to as a through electrode.

The second display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j). The second display element 550 (i, j) has a function of emitting light toward the functional layer 520. Further, the second display element 550 (i, j) has a function of emitting light toward the lens 580 or the optical element 560, for example.

The second display element is so that the display using the second display element 550 (i, j) can be visually recognized in a part of the range in which the display using the first display element 750 (i, j) can be visually recognized. 550 (i, j) is arranged. For example, a shape including a region 751H that does not block the light emitted by the second display element 550 (i, j) is used for the electrode 751 (i, j) of the first display element 750 (i, j). The direction in which the external light is incident and reflected on the first display element 750 (i, j) that controls the intensity of reflecting the external light and displays the image information is shown in the figure by using a broken line arrow. Further, the direction in which the second display element 550 (i, j) emits light in a part of the range in which the display using the first display element 750 (i, j) can be visually recognized is indicated by using the solid arrow. Shown in the figure.

As a result, the display using the second display element can be visually recognized in a part of the region where the display using the first display element can be visually recognized. Alternatively, the user can visually recognize the display without changing the posture of the input / output panel. Alternatively, the object color expressed by the light reflected by the first display element can be multiplied by the light source color expressed by the light emitted by the second display element. Alternatively, a pictorial display can be made using the object color and the light source color. As a result, it is possible to provide a new input / output panel having excellent convenience or reliability.

For example, the first display element 750 (i, j) includes an electrode 751 (i, j), an electrode 752, and a layer 753 containing a liquid crystal material. Further, the alignment film AF1 and the alignment film AF2 are provided. Specifically, a reflective liquid crystal element can be used for the first display element 750 (i, j).

For example, a transparent conductive film having a refractive index of around 2.0 can be used for the electrode 752 or the electrode 751 (i, j). Specifically, an oxide containing indium, tin, and silicon can be used for the electrode 752 or the electrode 751 (i, j). Alternatively, a material having a refractive index of around 1.6 can be used for the alignment film.

For example, the second display element 550 (i, j) includes an electrode 551 (i, j), an electrode 552, and a layer 553 (j) containing a luminescent material. The electrode 552 includes a region overlapping the electrode 551 (i, j). The layer 553 (j) containing the luminescent material comprises a region sandwiched between the electrodes 551 (i, j) and the electrodes 552. The electrode 551 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522. Specifically, the organic EL element can be used for the second display element 550 (i, j).

For example, a transparent conductive film having a refractive index of around 2.0 can be used for the electrode 551 (i, j). Specifically, an oxide containing indium, tin, and silicon can be used for the electrode 551 (i, j). Alternatively, a material having a refractive index of around 1.8 can be used for the layer 553 (j) containing the luminescent material.

The optical element 560 is translucent, and the optical element 560 includes a first region, a second region, and a third region.

The first region includes a region to which visible light is supplied from the second display element 550 (i, j), the second region includes a region in contact with the coating film 565, and the third region is visible light. It has a function to eject a part. Further, the third region has an area equal to or smaller than the area of the region to which the visible light of the first region is supplied.

The coating film 565 has a reflectivity to visible light, and the coating film 565 has a function of reflecting a part of visible light and supplying it to a third region.

For example, a metal can be used for the coating film 565. Specifically, a material containing silver can be used for the coating film 565. For example, a material containing silver, palladium, or the like, or a material containing silver, copper, or the like can be used for the coating film 565.

《Lens 580》
A material that transmits visible light can be used for the lens 580. Alternatively, a material having a refractive index of 1.3 or more and 2.5 or less can be used for the lens 580. For example, an inorganic or organic material can be used for the lens 580.

For example, a material containing oxides or sulfides can be used for the lens 580.

Specifically, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium and zinc, etc. Can be used for the lens 580. Alternatively, zinc sulfide or the like can be used for the lens 580.

For example, a material containing resin can be used for the lens 580. Specifically, a resin into which chlorine, bromine or iodine is introduced, a resin into which a heavy metal atom is introduced, a resin into which an aromatic ring is introduced, a resin into which sulfur is introduced, and the like can be used for the lens 580. Alternatively, a resin containing nanoparticles of a resin and a material having a higher refractive index than the resin can be used for the lens 580. Titanium oxide, zirconium oxide, or the like can be used for the nanoparticles.

<< Functional layer 720 >>
The functional layer 720 includes a region sandwiched between the substrate 770 and the insulating film 501C. The functional layer 720 has an insulating film 771 and a colored film CF1.

The colored film CF1 includes a region sandwiched between the substrate 770 and the first display element 750 (i, j).

The insulating film 771 includes a region sandwiched between the colored film CF1 and the layer 753 containing the liquid crystal material. Thereby, the unevenness based on the thickness of the colored film CF1 can be flattened. Alternatively, it is possible to suppress the diffusion of impurities from the colored film CF1 or the like to the layer 753 containing the liquid crystal material.

For example, an acrylic resin having a refractive index of around 1.55 can be used for the insulating film 771.

<< Substrate 570, Substrate 770 >>
Further, the input / output panel described in this embodiment includes a substrate 570 and a substrate 770.

The substrate 770 includes a region that overlaps with the substrate 570. The substrate 770 includes a region sandwiching the functional layer 520 with the substrate 570.

The substrate 770 includes a region that overlaps with the first display element 750 (i, j). For example, a material in which birefringence is suppressed can be used in the region.

For example, a resin material having a refractive index of around 1.5 can be used for the substrate 770.

<< Bonding layer 505 >>
Further, the input / output panel described in this embodiment has a bonding layer 505.

The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570, and has a function of bonding the functional layer 520 and the substrate 570.

<< Structure KB1, Structure KB2 >>
Further, the input / output panel described in the present embodiment has a structure KB1 and a structure KB2.

The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770. The structure KB1 has a region overlapping the region 751H, and the structure KB1 has translucency. As a result, the light emitted by the second display element 550 (i, j) can be supplied to one surface and emitted from the other surface.

Further, the structure KB1 has a region overlapping with the optical element 560, and for example, a material selected so that the difference from the refractive index of the material used for the optical element 560 is 0.2 or less is used for the structure KB1. As a result, the light emitted by the second display element 550 (i, j) can be efficiently used. Alternatively, the area of the second display element 550 (i, j) can be increased. Alternatively, the density of the current flowing through the organic EL element can be reduced.

The structure KB2 has a function of controlling the thickness of the polarizing layer 770PB to a predetermined thickness. The structure KB2 has a region overlapping with the second display element 550 (i, j), and the structure KB2 has translucency.

Alternatively, a material that transmits light of a predetermined color can be used for the structure KB1 or the structure KB2. Thereby, the structure KB1 or the structure KB2 can be used, for example, as a color filter. For example, a material that transmits blue, green, or red light can be used for structure KB1 or structure KB2. Further, a material that transmits yellow light, white light, or the like can be used for the structure KB1 or the structure KB2.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or a composite material of a plurality of resins selected from these can be used for the structure KB1 or the structure KB2. Further, it may be formed by using a material having photosensitivity.

For example, an acrylic resin having a refractive index of around 1.5 can be used for the structure KB1. Further, an acrylic resin having a refractive index of around 1.55 can be used for the structure KB2.

<< Input unit 330 >>
The input unit 330 includes a detection element. The detection element has a function of detecting an object close to the area overlapping the pixel 702 (i, j). As a result, the position information can be input by using a finger or the like close to the display unit as the pointer.

For example, a capacitance type proximity sensor, an electromagnetic induction type proximity sensor, an optical type proximity sensor, a resistance film type proximity sensor, a surface acoustic wave type proximity sensor, or the like can be used for the input unit 330. Specifically, a surface-type capacitance method, a projection-type capacitance method, or an infrared detection-type proximity sensor can be used.

For example, a touch sensor having a refractive index near 1.6 equipped with a capacitance type proximity sensor can be used for the input unit 330.

<< Functional film 770D, Functional film 770P >>
Further, the input / output panel 700TP3 described in the present embodiment has a functional film 770D and a functional film 770P.

The functional film 770D includes a region overlapping with the first display element 750 (i, j). The functional film 770D includes a region sandwiching the first display element 750 (i, j) with the functional layer 520.

For example, a light diffusing film can be used for the functional film 770D. Specifically, a material having a columnar structure having an axis along a direction intersecting the surface of the substrate can be used for the functional film 770D. As a result, light can be easily transmitted in the direction along the axis and easily scattered in other directions. Alternatively, for example, the light reflected by the first display element 750 (i, j) can be diffused.

The functional film 770P includes a polarizing layer 770PB, a retardation film 770PA, and a structure KB2. The polarizing layer 770PB has an opening, and the retardation film 770PA has a region overlapping the polarizing layer 770PB. The structure KB2 is provided at the opening.

For example, a dichroic dye, a liquid crystal material and a resin can be used for the polarizing layer 770PB. The polarizing layer 770PB has a polarization property. Thereby, the functional film 770P can be used as a polarizing plate.

The polarizing layer 770PB has a region overlapping with the first display element 750 (i, j), and the structure KB2 has a region overlapping with the second display element 550 (i, j). As a result, the liquid crystal element can be used as the first display element. For example, a reflective liquid crystal element can be used as the first display element. Alternatively, the light emitted by the second display element can be efficiently extracted. Alternatively, the density of the current flowing through the organic EL element can be reduced. Alternatively, the reliability of the organic EL element can be improved.

For example, an antireflection film, a polarizing film or a retardation film can be used for the functional film 770P. Specifically, a film containing a dichroic dye and a retardation film can be used for the functional film 770P.

Further, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the generation of scratches due to use, and the like can be used for the functional film 770P.

For example, a material having a refractive index of around 1.6 can be used for the light diffusion film. Further, a material having a refractive index of around 1.6 can be used for the retardation film 770PA.

It should be noted that this embodiment can be appropriately combined with other embodiments shown in the present specification.

(Embodiment 6)
In the present embodiment, the display module and the electronic device having the display device of one aspect of the present invention will be described with reference to FIGS. 33 to 34.

The display module 8000 shown in FIG. 33 (A) has a display panel 8006, a frame 8009, a printed circuit board 8010, and a battery 8011 connected to the FPC 8005 between the upper cover 8001 and the lower cover 8002.

For example, a display device manufactured using one aspect of the present invention can be used for the display panel 8006. As a result, it is possible to obtain a display module having good display quality and low power consumption.

The shape and dimensions of the upper cover 8001 and the lower cover 8002 can be appropriately changed according to the size of the display panel 8006.

Further, a touch panel may be provided on the display panel 8006. As the touch panel, a resistance film type or capacitance type touch panel can be used by superimposing it on the display panel 8006. It is also possible to provide the display panel 8006 with a touch panel function without providing a touch panel. For example, an optical sensor may be provided in each pixel of the display panel 906 or in the housing to form an optical touch panel.

In addition to the protective function of the display panel 8006, the frame 8009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 8010. Further, the frame 8009 may have a function as a heat sink.

The printed circuit board 8010 has a circuit such as a power supply circuit, a signal generation circuit for outputting a video signal, and a clock signal. The power source for supplying electric power to the power supply circuit may be an external commercial power source or a power source provided by a separately provided battery 8011. The battery 8011 can be omitted when a commercial power source is used.

Further, the display module 8000 may be additionally provided with members such as a polarizing plate, a retardation plate, and a prism sheet.

FIG. 33B is a schematic cross-sectional view of the display module 8000 including an optical touch panel.

The display module 8000 has a light emitting unit 8015 and a light receiving unit 8016 provided on the printed circuit board 8010. Further, the area surrounded by the upper cover 8001 and the lower cover 8002 has a pair of light guides (light guide 8017a, light guide 8017b).

The display panel 8006 is provided so as to be overlapped with the printed circuit board 8010 and the battery 8011 with the frame 8009 interposed therebetween. The display panel 8006 and the frame 8009 are fixed to the light guide unit 8017a and the light guide unit 8017b.

The light 8018 emitted from the light emitting unit 8015 passes through the upper part of the display panel 8006 by the light guide unit 8017a, passes through the light guide unit 8017b, and reaches the light receiving unit 8016. For example, the light 8018 is blocked by a detected object such as a finger or a stylus, so that the touch operation can be detected.

A plurality of light emitting units 8015 are provided, for example, along two adjacent sides of the display panel 8006. A plurality of light receiving units 8016 are provided at positions facing each other with the light emitting unit 8015 interposed therebetween. As a result, it is possible to acquire information on the position where the touch operation is performed.

As the light emitting unit 8015, a light source such as an LED element can be used. In particular, it is preferable to use a light source that emits infrared rays that are not visible to the user and are harmless to the user as the light emitting unit 8015.

As the light receiving unit 8016, a photoelectric element that receives the light emitted by the light emitting unit 8015 and converts it into an electric signal can be used. Preferably, a photodiode capable of receiving infrared rays can be used.

As the light guide unit 8017a and the light guide unit 8017b, at least a member that transmits light 8018 can be used. By using the light guide unit 8017a and the light guide unit 8017b, the light emitting unit 8015 and the light receiving unit 8016 can be arranged under the display panel 8006, and the external light reaches the light receiving unit 8016 and the touch sensor malfunctions. Can be suppressed. In particular, it is preferable to use a resin that absorbs visible light and transmits infrared rays. As a result, the malfunction of the touch sensor can be suppressed more effectively.

34 (A) to 34 (G) are views showing electronic devices. These electronic devices include a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, an operation key 5005 (including a power switch or an operation switch), a connection terminal 5006, and a sensor 5007 (force, displacement, position, speed, etc.). Measures acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays. , Microphone 5008, etc. can be provided.

FIG. 34 (A) is a mobile computer, which may have a switch 5009, an infrared port 5010, and the like, in addition to those described above. FIG. 34B is a portable image reproduction device (for example, a DVD reproduction device) provided with a recording medium, and may have a second display unit 5002, a recording medium reading unit 5011, and the like in addition to those described above. can. FIG. 34 (C) is a goggle type display, which may have a second display unit 5002, a support unit 5012, an earphone 5013, and the like, in addition to those described above. FIG. 34 (D) is a portable gaming machine, which may have a recording medium reading unit 5011 and the like in addition to those described above. FIG. 34 (E) is a digital camera with a television image receiving function, which may have an antenna 5014, a shutter button 5015, an image receiving unit 5016, and the like, in addition to those described above. FIG. 34 (F) is a portable gaming machine, which may have a second display unit 5002, a recording medium reading unit 5011, and the like, in addition to those described above. FIG. 34 (G) is a portable television receiver, and in addition to the above-mentioned one, a charger 5017 capable of transmitting and receiving signals and the like can be provided.

The electronic devices shown in FIGS. 34 (A) to 34 (G) can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., and a function to control processing by various software (programs). , Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read out program or data recorded on recording medium It can have a function of displaying on a display unit, and the like. Further, in an electronic device having a plurality of display units, a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or consideration of parallax on a plurality of display units. It is possible to have a function of displaying a three-dimensional image by displaying the image. Further, in an electronic device having an image receiving unit, a function of shooting a still image, a function of shooting a moving image, a function of automatically or manually correcting the shot image, and a function of recording the shot image as a recording medium (external or built in the camera). It can have a function of saving, a function of displaying a captured image on a display unit, and the like. The functions that the electronic devices shown in FIGS. 34 (A) to 34 (G) can have are not limited to these, and can have various functions.

FIG. 34 (H) is a smart watch, which has a housing 7302, a display panel 7304, operation buttons 7311 and 7312, a connection terminal 7313, a band 7321, a clasp 7322, and the like.

The display panel 7304 mounted on the housing 7302 that also serves as a bezel portion has a non-rectangular display area. The display panel 7304 may be a rectangular display area. The display panel 7304 can display an icon 7305 representing a time, another icon 7306, and the like.

The smart watch shown in FIG. 34 (H) can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., and a function to control processing by various software (programs). , Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read out program or data recorded on recording medium It can have a function of displaying on a display unit, and the like.

Further, inside the housing 7302, a speaker, a sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current) , Includes the ability to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), microphones, and the like. The smart watch can be manufactured by using a light emitting element for the display panel 7304.

ACF1 Conductive material ACF2 Conductive material AF1 Alignment film AF2 Alignment film C1 Arrow C2 Arrow C4 Capacitive element C6 Capacitive element C11 Capacitive element C12 Capacitive element CF1 Colored film CF2 Colored film CS1 Capacitive element F1 Frame period F2 Frame period F3 Frame period G1 Scanning line G2 Scan line KB1 Structure KB2 Structure LOAD1 Signal LOAD2 Signal M1 Transistor M2 Transistor M3 Transistor M4 Transistor M5 Transistor MW1 Transistor P1 Period P2 Period R1 Arrow R2 Arrow S1 Signal line S2 Signal line SAVE2 Signal SD1 Source driver SD2 Source driver SW1 Switch SW2 T1 transistor T2 transistor T6 transistor VCOM1 wiring VCOM2 wiring X1-X2 cutting line X3-X4 cutting line X5-X6 cutting line X7-X8 cutting line X9-X10 cutting line 10 pixels 10a reflective element 10b light emitting element 11 pixel circuit 11A pixel circuit 11B Pixel circuit 11C Pixel circuit 12 Pixel circuit 13 Opening 14 Reflected light 15 Light 17 Holding circuit 18 Selector 19 Flip flop circuit 20 Inverter 25 Inverter 27 Analog switch 28 Analog switch 31 Inverter 33 Inverter 34 Clocked inverter 35 Analog switch 36 Buffer 99 Display device 100 Display device 110 Display unit 111 Pixel array 113 Gate driver 114 Gate driver 115 Controller IC
117 controller IC
120 Touch sensor unit 121 Sensor array 125 Peripheral circuit 126 TS driver 127 Sense circuit 140 Host 143 Optical sensor 144 Open / close sensor 145 External light 150 Interface 151 Frame memory 152 Decoder 153 Sensor controller 154 Controller 155 Clock generation circuit 160 Image processing unit 161 Gamma correction Circuit 162 Dimming circuit 163 Color matching circuit 164 EL correction circuit 170 Memory 173 Timing controller 175 Register 175A Scan chain register part 175B Register part 180 Source driver 181 Source driver 182 Source driver 184 Touch sensor controller 186 Source driver IC
190 Area 191 Area 202 Control unit 203 Cellular 204 Sense amplifier circuit 205 Driver 206 Main amplifier 207 Input / output circuit 208 Peripheral circuit 209 Memory cell 230 Register 231 Register 310 Unit 320 Unit 330 Input unit 501A Insulation film 501C Insulation film 504 Conductive film 505 junction Layer 506 Insulating film 508 Oxide semiconductor film 508A Region 508B Region 508C Region 511B Conductive 511C Conductive 511D Conductive 512A Conductive 512B Conductive 516 Insulating film 518 Insulating film 519B Terminal 519C Terminal 519D Terminal 521 Insulating film 524 Insulation Film 551 Electrode 552 Electrode 555 Layer 560 Optical element 565 Coating film 570 Substrate 580 Lens 702 Pixel 705 Encapsulant 720 Functional layer 751 Electrode 751E Region 751H Opening 752 Electrode 753 Layer 754A Intermediate film 754B Intermediate film 754C Intermediate film 754D 770 Board 770D Functional film 770P Functional film 771 Insulating film 775 Detection element 906 Display panel 5000 Housing 5001 Display unit 5002 Display unit 5003 Speaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading Part 5012 Support part 5013 Earphone 5014 Antenna 5015 Shutter button 5016 Image receiving part 5017 Charger 7302 Housing 7304 Display panel 7305 Icon 7306 Icon 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Clasp 8000 Display module 8001 Top cover 8002 Bottom cover 8005 FPC
8006 Display panel 8009 Frame 8010 Printed circuit board 8011 Battery 8015 Light emitting part 8016 Light receiving part 8017a Light guide part 8017b Light guide part 8018 Light

Claims (5)

An optical sensor that detects the intensity of external light and generates a detection signal,
A controller IC that is electrically connected to the optical sensor and has a function of switching a display mode according to the detection signal.
It has a pixel array electrically connected to the controller IC, and has.
The pixel array has a pixel having a reflective element, a light emitting element, a first pixel circuit having a function of driving the reflective element, and a second pixel circuit having a function of driving the light emitting element. death,
In the first period in which the first image data written in the first pixel circuit is updated to update the transmittance of the reflective element, the second period is shorter than the first period. The second image data is written in the pixel circuit to cause the light emitting element to emit light.
The second image data has a time integral value of luminance according to the light emission time of the light emitting type element.
The time integral value is displayed, in which the transmittance of the reflective element changes by writing the first image data to the first pixel circuit, and is equal to the time integral value of the brightness according to the delay of the change. Device. An optical sensor that detects the intensity of external light and generates a detection signal,
A controller IC that is electrically connected to the optical sensor and has a function of switching the display mode according to the detection signal.
It has a pixel array electrically connected to the controller IC, and has.
The pixel array has a pixel having a reflective element, a light emitting element, a first pixel circuit having a function of driving the reflective element, and a second pixel circuit having a function of driving the light emitting element. death,
The display mode has a first mode for performing reflection display, a second mode for performing reflection display and light emission display, and a third mode for performing light emission display.
In the second mode, within the first period in which the first image data written in the first pixel circuit is updated to update the transmittance of the reflective element, the second pixel circuit is seconded. There is a second period in which the image data of 2 is written and the light emitting element is made to emit light.
The second image data has a time integral value of luminance according to the light emission time of the light emitting type element.
The time integral value is displayed, in which the transmittance of the reflective element changes by writing the first image data to the first pixel circuit, and is equal to the time integral value of the brightness according to the delay of the change. Device. In claim 1 or 2,
The reflective element is a display device which is a liquid crystal element having a reflective electrode. In any one of claims 1 to 3,
A display device in which the first image data is updated every one frame period, and the updated first image data is a signal output with the polarity reversed every one frame period. The display device according to any one of claims 1 to 4.
An electronic device that has an operation button and.

Images