JP6903087B2 - Light emitting element - Google Patents

Description

The present invention relates to a light emitting device structure and a method for manufacturing the same, and more particularly to a light emitting device structure in which an electrode has a first layer and a second layer and a method for manufacturing the same.

Light emitting diodes are a widely used light source in semiconductor devices. Since light emitting diodes have characteristics of power saving and long service life as compared with conventional incandescent lamps or fluorescent lamps, they gradually replace conventional light sources in various fields such as traffic signs, backlight modules, street lighting, etc. It is applied in industries such as medical equipment.

As light emitting diode light sources are applied and evolved, the demand for brightness is increasing. How to increase the luminous efficiency and improve its brightness is an important direction for the industrial industry to work together.

FIG. 9 shows the conventional LED package 30. The LED package 30 includes a package structure 31 and a semiconductor LED chip 32 packaged by the package structure 31. The semiconductor LED chip 32 has a pn contact surface 33, and the package structure 31 is generally a thermosetting material such as epoxy resin or thermosetting plastic. The semiconductor LED chip 32 is connected to two conductive frames 35 and 56 via a wire 34. Epoxy resin can operate only in a low temperature environment because a degrading phenomenon occurs in a high temperature. Further, since the epoxy resin has a high thermal resistance, the structure of FIG. 9 provides a thermal dispersion route of a high resistance value of the semiconductor LED chip 32, and the application of the low power consumption of the LED package 30 is applied. Limited.

An object of the present invention is to provide a light emitting device.

According to one aspect of the present invention, a semiconductor laminate including a concave groove having a bottom portion and a flat base having an upper surface, and a first portion located in the concave groove and a part of the upper surface of the flat base. Insulation layer and
A first layer containing a first conductive material and located in a partial region of the upper surface of the flat table, and a second layer containing a second conductive material and located on the first layer. A first electrode including a layer and a light emitting device including the layer are provided.

Preferably, the first conductive material forming the first layer of the first electrode and the second conductive material forming the second layer of the first electrode are different. Further, the reflectance of the first layer of the first electrode to the light rays generated by the light emitting element is larger than the reflectance to the light rays of the second layer of the first electrode, and the reflectance to the light rays of the second layer. The reflectance is greater than 60%.

The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view and the sectional view of the light emitting element structure which concerns on 1st Example of this invention. The plan view of the light emitting element structure which concerns on 1st Example of this invention. The block diagram of the LED package of the conventional light emitting element. Exploded view of a light bulb according to another embodiment of the present invention.

Each embodiment for carrying out the present invention will be described with reference to FIGS. 1 to 8 and 10.

FIG. 1A is a plan view of a light emitting device according to a first embodiment of the present invention. As shown in FIG. 1A, the light emitting element includes a substrate (not shown) and a semiconductor laminate. The semiconductor laminate includes a first conductive semiconductor layer 11, an active layer (not shown in FIG. 1A) formed on the first conductive semiconductor layer, and a second conductive semiconductor layer 12. The first conductive semiconductor layer 11 is exposed by etching a part of the second conductive semiconductor layer 12 and the active layer.

FIG. 1B is a cross-sectional view taken along a cross section line AA'. The semiconductor laminate includes a recessed groove having a bottom and a flat base having an upper surface. In this embodiment, the upper surface of the flat table is the surface of the second conductive semiconductor layer 12, the first conductive semiconductor layer 11 is exposed from the bottom of the concave groove, and the concave groove crosses the active layer 21. .. After the light emitting element is formed, the light emitting element is driven by a voltage to provide electrons to the first conductive semiconductor layer 11 and holes to the second conductive semiconductor layer 12, and the electrons and holes are provided. And are combined in the active layer 21 to emit light rays.

As shown in FIGS. 2A and 2B, the second electrode 13 is formed on the bottom of the groove and the first conductive semiconductor layer 11, and the second electrode 13 and the first conductive semiconductor layer 11 are formed. Is electrically connected to.

As shown in FIG. 3A, the cross-sectional area cut along the line AA'and the cross-sectional area cut along the line BB' differ in structure and manufacturing process, and therefore each will be described below. First, FIG. 3B shows a cross-sectional area cut along the line AA'. The first insulating layer 14 is formed in a concave groove and a part of the upper surface of the flat table, and covers the second electrode 13.

As shown in FIGS. 4A and 4B, the first layer 15 of the first electrode is formed in a part of the upper surface of the flat table and does not overlap with the first insulating layer 14 apart from each other. In this embodiment, the first layer 15 of the first electrode contains the first conductive material, and the first conductive material may be, for example, a metal. The first conductive material contains at least one material selected from the group consisting of silver, platinum, and gold, and the thickness of the first layer 15 is 500 Å or more and 5000 Å or less.

As shown in FIGS. 5A and 5B, the second layer 16 of the first electrode is formed on the first layer 15 of the first electrode, and the first layer 15 of the first electrode and the first insulating layer 14 are formed. Cover at least part of. In this embodiment, the second layer 16 of the first electrode includes a second conductive material, and the second conductive material may be, for example, a metal. The second conductive material contains at least one material selected from the group consisting of nickel, aluminum, copper, chromium and titanium, and the thickness of the second layer 16 is 2000 Å or more and 1.5 μm or less. .. In another embodiment, unlike the first conductive material forming the first layer 15 and the second conductive material forming the second layer 16, reflection on light rays emitted by the light emitting element of the first layer 15 The rate is greater than the reflectance for light rays emitted by the light emitting element of the second layer 16. Preferably, the reflectance of the second layer 16 to light rays is greater than 60%.

As shown in FIGS. 6A and 6B, a second insulating layer 17 is formed on the second layer 16 of the first electrode, and the second layer 16 of the first electrode is spaced apart from the second insulating layer 17. Exposed from the area. The region of the second insulating layer 17 and the region of the first insulating layer 14 substantially correspond to each other. In this embodiment, the second insulating layer 17 and the first insulating layer 14 at the edge of the light emitting element may be in direct contact with each other. The material constituting the first insulating layer 14 and the material constituting the second insulating layer 17 may be the same or different, and the composition materials of both are silicon oxide, silicon nitride, aluminum oxide, and the like. It may be zirconium oxide or titanium oxide.

As shown in FIGS. 7A and 7B, the first electrode pad 18 is formed on the second insulating layer 17 and in the interval region of the second insulating layer 17, and the first electrode pad 18 is the first electrode first. It is electrically connected to the first layer 15 and the second layer 16.

Next, FIG. 3C shows a cross-sectional area cut along the line BB'of FIG. 3A. The first insulating layer 14 is formed in a concave groove and a part of the upper surface of the flat table. In this embodiment, a passage 20 is formed in a part of the upper surface of the second electrode 13 in a region not covered by the first insulating layer 14.

As shown in FIGS. 4A and 4C, the first layer 15 of the first electrode is formed in a part of the upper surface of the flat table and does not overlap with the first insulating layer 14 apart from each other. In this embodiment, the first layer 15 of the first electrode contains the first conductive material, and the first conductive material may be, for example, a metal. The first conductive material comprises at least one material selected from the group consisting of silver, platinum, and gold. The thickness of the first layer 15 is 500 Å or more and 5000 Å or less.

As shown in FIGS. 5A and 5C, the second layer 16 of the first electrode is formed on the first layer 15 of the first electrode, and the first layer 15 of the first electrode and the first insulating layer 14 are formed. Cover at least part of. In this embodiment, the first electrode first layer 15 and the first electrode second layer 16 cover the groove. The first electrode second layer 16 contains a second conductive material, and the second conductive material may be, for example, a metal. The second conductive material contains at least one material selected from the group consisting of nickel, aluminum, copper, chromium and titanium, and the thickness of the second layer 16 is 2000 Å or more and 1.5 μm or less. .. In another embodiment, unlike the first conductive material forming the first layer 15 and the second conductive material forming the second layer 16, reflection on light rays emitted by the light emitting element of the first layer 15 The rate is greater than the reflectance for light rays emitted by the light emitting element of the second layer 16. Preferably, the reflectance of the second layer 16 to light rays is greater than 60%.

As shown in FIGS. 6A and 6C, a second insulating layer 17 is formed on the first electrode second layer 16 and on the plurality of first insulating layers 14. A part of the region of the second insulating layer 17 and the region of the first insulating layer 14 are in direct contact with each other. The material constituting the first insulating layer 14 and the material constituting the second insulating layer 17 may be the same or different, and the composition materials of both are silicon oxide, silicon nitride, aluminum oxide, and the like. It may be zirconium oxide or titanium oxide.

As shown in FIGS. 7A and 7C, a second electrode pad 19 is formed on the second insulating layer 17 and in the region of the passage 20, and the second electrode pad 19 is electrically connected to the second electrode 13. Will be done. FIG. 8 is a plan view of the formed light emitting element 10.

FIG. 10 is an exploded view of a light bulb according to another embodiment of the present invention. The light bulb 40 includes a lamp cover 41, a lens 42, a light emitting module 44, a lamp socket 45, a heat radiation fin 46, a coupling portion 47, and an electric terminal 48. The light emitting module 44 further includes a mounting plate 43, and the plurality of light emitting elements 10 according to the above-described embodiment are located on the mounting plate 43.

The materials of the second electrode 13, the first electrode pad 18, and the second electrode pad 19 described above are chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), and copper (Cu). , Gold (Au), Aluminum (Al), Tungsten (W), Tin (Sn) or Silver (Ag) and the like. The substrate (not shown) is the growth and / or mounting base. Candidate materials include translucent substrates, and translucent substrate materials include sapphire, lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), gallium nitride (AlN), glass, diamond, etc. It may be CVD diamond, diamond-like carbon (DLC), spinel (MgAl ₂ O ₄ ), silicon oxide (SiO _X ) and lithium gallium _{nitride (LiGaO 2).}

The first conductive semiconductor layer 11 and the second conductive semiconductor layer 12 described above have different electrical properties, polarities, or dopants in at least two parts, or a single layer or a multilayer of electron and hole semiconductor materials, respectively. (“Multilayer” refers to two or more layers; the same shall apply hereinafter), the electrical choice of which is at least two combinations of p-type, n-type and i-type. There may be. The active layer 21 is located between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 12, and is a region in which electrical energy and light energy can be converted or induced to be converted. Those that convert or induce electrical energy to optical energy are, for example, light emitting diodes, liquid crystal displays, and organic light emitting diodes, and those that convert or induce optical energy to electrical energy are solar cells and photoelectric diodes. One or more elements contained in the materials of the first conductive semiconductor layer 11, the active layer 21 and the second conductive semiconductor layer 12 described above are gallium (Ga), aluminum (Al), indium (In), and the like. It was selected from the group consisting of arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si).

The light emitting device according to another embodiment of the present invention is a light emitting diode, and the light emitting spectrum thereof is changed by adjusting the physical or chemical elements of a semiconductor single layer or a multilayer. Commonly used materials include, for example, aluminum phosphide gallium gallium indium (AlGaInP) series, aluminum nitride gallium indium (AlGaInN) series, zinc oxide (ZnO) series and the like. The composition of the active layer (not shown) is, for example, a single heterostructure (SH), a double heterostructure (DH), a double-sided double heterostructure (double-side double heterostructure), a double-sided double heterostructure, a double-sided double heterostructure (DH), and a double-side double heterostructure (DH). (Multi-quantum well, MQW). Further, the change of the emission wavelength may adjust the logarithm of the quantum well.

In one embodiment of the present invention, a buffer layer (not shown) may be selectively included between the first conductive semiconductor layer 11 and the substrate (not shown). This buffer layer lies between the two material systems and "migrates" the material system of the substrate to the material system of the semiconductor system. Regarding the structure of the light emitting diode, the buffer layer is a material layer for reducing the lattice mismatch between the two kinds of materials. On the other hand, the buffer layer may be a single layer, a multilayer or a structure for binding two kinds of materials or two separated structures. The material of the buffer layer may be selected from, for example, an organic material, an inorganic material, a metal, a semiconductor, etc., and its structure may be, for example, a reflective layer, a heat conductive layer, a conductive layer, an ohmic contact layer, or the like. , Deformation resistant layer, stress release layer, bonding layer, wavelength conversion layer, mechanically fixed structure and the like. In one embodiment, the material of the buffer layer may be AIN, GaN, and the method of forming the buffer layer may be Sputter or Atomic Layer Deposition (ALD).

The second conductive semiconductor layer 12 may further selectively form a second conductive contact layer (not shown). The contact layer is provided on the side of the second conductive semiconductor layer away from the active layer 21. Specifically, the second conductive contact layer may be an optical layer, an electromagnetic layer, or a combination of both. The optical layer may change the electromagnetic radiation or light rays from or to the active layer 21. "Change" here is to change at least one type of optical characteristic of electromagnetic radiation or light, which is frequency, wavelength, intensity, flux, efficiency, color temperature, color rendering index, light irradiation field. (Light field) and angle of view (angle of view) may be included, and is not limited to those exemplified herein. The electrical layer creates a trend that changes or changes the value, density, distribution of at least one of the voltage, resistance, current, and capacitance between any pair of opposite sides of the second conductive contact layer. It may be a thing. The constituent materials of the second conductive contact layer are oxides, conductive oxides, transparent oxides, oxides and metals having a transmittance of 50% or more, metals having relative light transmittance, and transmittances of 50% or more. Includes at least one of metals, organics, inorganics, phosphors, phosphors, ceramics, semiconductors, impurity-doped semiconductors, and non-impurity-doped semiconductors. In one application, the material of the second conductive contact layer is at least one of indium tin oxide, cadmium oxide tin, antimony oxide, indium zinc oxide, zinc aluminum oxide, and tin zinc oxide. In the case of a light transmitting metal, its thickness is about 0.005 μm to 0.6 μm.

Although the specific embodiments of the present invention have been described above with reference to the drawings and characters, the elements, implementation methods, design standards, and technical principles described or disclosed in each embodiment are cases of collision, contradiction, and difficulty in joint implementation. However, those skilled in the art may optionally refer to, exchange, formulate, coordinate, or merge as necessary.

The above description is merely a preferred embodiment of the present invention, and the scope of implementation of the present invention, the order of implementation, or the materials and manufacturing methods used are not limited thereto, and the scope of claims of the present invention is limited. And any modification or modification can be made by those skilled in the art based on the contents of the specification, and the scope of protection of the present invention is based on the scope of claims.

10 Light emitting element 11 1st conductive semiconductor layer 12 2nd conductive semiconductor layer 13 2nd electrode 14 1st insulating layer 15 1st electrode 1st layer 16 1st electrode 2nd layer 17th 2 Insulation layer 18 1st electrode pad 19 2nd electrode pad 20 Passage 21 Active layer 30 LED package 31 Package structure 32 LED chip 33 pn contact surface 34 Wire 35, 36 Conductive frame 40 Light bulb 41 Lamp cover 42 Lens 43 Mounting plate 44 Light emitting module 45 Lamp socket 46 Heat dissipation fin 47 Coupling part 48 Electrical terminal

Claims (10)

It is a light emitting element
A semiconductor laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The semiconductor laminate includes a plurality of recesses and a flat base, and the plurality of recesses. Each has a bottom portion that exposes the first conductive semiconductor layer, the flat base has an upper surface, and the upper surface is the surface of the second conductive semiconductor layer.
A first layer of first electrodes comprising a first conductive material and located on the upper surface of the flatbed.
A plurality of second electrodes that are separated from each other and are located at the bottom of each of the plurality of recesses, and the plurality of second electrodes are separated from each of the bottoms of the plurality of recesses. A plurality of second electrodes, each having an upper surface located on the side,
A first insulating layer located in the plurality of recesses and above a part of the upper surface of the flat table, wherein the first insulating layer is of the plurality of second electrodes. A first insulating layer that covers a portion of each of the upper surfaces and includes a plurality of passages so as to expose the other portion of each of the upper surfaces of the plurality of second electrodes.
A first electrode second layer containing the second conductive material and covering the plurality of second electrodes, the first insulating layer, and the first electrode first layer, wherein the first electrode The insulating layer is located between the first electrode second layer and the plurality of second electrodes, and in the plan view of the light emitting element, the outer contour of the first electrode second layer and the flat surface. A second layer of first electrodes, which roughly corresponds to the outer contour of the table,
And including a second insulating layer a plurality of spacing regions so that the cover part of the first electrode and the second layer, thereby and expose the other portion of the first electrode and the second layer,
A first electrode pad that is located on the second insulating layer, covers the first conductive semiconductor layer and the second conductive semiconductor layer, and is in contact with the second layer of the first electrode. The second insulating layer is located between the second layer of the first electrode and the first electrode pad, and the second insulating layer is in direct contact with the first electrode pad. The first electrode pad and
A second electrode that is located on the plurality of second electrodes, covers the first conductive semiconductor layer and the second conductive semiconductor layer, and is electrically connected to the plurality of second electrodes. Electrode pads and light emitting elements including. The light emitting device according to claim 1, further comprising a substrate located under the semiconductor laminate. The active layer can emit light rays
The light emitting device according to claim 1, wherein the plurality of concave grooves cross the second conductive semiconductor layer and the active layer. The light emitting element according to claim 3, wherein one of the plurality of concave grooves surrounds the flat table. The light emitting device according to claim 1, wherein the first insulating layer includes a surface located between the upper surface of the first layer of the first electrode and the upper surface of the second layer of the first electrode. .. The light emitting element according to claim 5, wherein the second insulating layer includes a part of a region in direct contact with the first insulating layer. The first conductive material and the second conductive material contain a metal and contain a metal.
The light emitting element according to claim 1, wherein the first conductive material and the second conductive material are different from each other. The light emitting device according to claim 3, wherein the reflectance of the first layer of the first electrode to the light rays is larger than the reflectance of the second layer of the first electrode to the light rays. Further including a second conductive contact layer provided on the side of the second conductive semiconductor layer away from the active layer.
The light emitting element according to claim 3, wherein the material of the second conductive contact layer contains indium tin oxide, cadmium oxide tin, antimony oxide, indium zinc oxide, zinc aluminum oxide or zinc oxide. It is a light emitting element
A semiconductor laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The semiconductor laminate includes a concave groove and a flat base, and the concave groove is the first. The flat base has an upper surface, and the upper surface is the surface of the second conductive semiconductor layer.
A first layer of first electrodes comprising a first conductive material and located on the upper surface of the flatbed.
A second electrode located at the bottom of the groove and
A first insulating layer located in the recess and above a part of the upper surface of the flatbed, wherein the first insulating layer is a part of the upper surface of the second electrode. With a first insulating layer, including a first passage so as to expose
It contains a second conductive material, is electrically connected to the second conductive semiconductor layer, covers the second electrode and the first layer of the first electrode, and is on the first insulating layer. The second layer of the first electrode located in, and in the cross-sectional view of the light emitting element, the first insulating layer is located between the second layer of the first electrode and the second electrode. However, the first electrode second layer includes a second passage that overlaps with the first passage and exposes the part of the upper surface of the second electrode. 2 layers and
A second insulating layer that covers the second layer of the first electrode and includes an interval region so as to expose the second layer of the first electrode.
A second layer that is located on the second insulating layer, covers the first conductive semiconductor layer and the second conductive semiconductor layer, and is electrically connected to the second layer of the first electrode. 1 electrode pad and
With a second electrode pad located on the second electrode, covering the first conductive semiconductor layer and the second conductive semiconductor layer, and electrically connected to the second electrode. A light emitting element including.

Images