CN103117332B - Photoelectric cell - Google Patents
Photoelectric cell Download PDFInfo
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- CN103117332B CN103117332B CN201110362728.5A CN201110362728A CN103117332B CN 103117332 B CN103117332 B CN 103117332B CN 201110362728 A CN201110362728 A CN 201110362728A CN 103117332 B CN103117332 B CN 103117332B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 3
- 238000003475 lamination Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 98
- 239000000463 material Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910010092 LiAlO2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of structure of photoelectric cell, and it is included：Semiconductor lamination, comprising：One first conductive-type semiconductor layer, an active layer and one second conductive-type semiconductor layer；One first electrode is electrically connected with the first conductive-type semiconductor layer, and first electrode also includes one first extension electrode；One second electrode is electrically connected with the second conductive-type semiconductor layer；And multiple limitation electric contact regions are located at semiconductor laminated the first extension electrode between, and multiple electric contact regions that limit are to become being spaced apart for distance.
Description
Technical field
The present invention relates to a kind of photoelectric cell structure and its manufacture method, a kind of more particularly to utilize limits in electrical contact
Region come improve electric current limitation structure and its manufacture method.
Background technology
Light emitting diode is a kind of light source being widely used in semiconductor element.Be compared to traditional incandescent lamp bulb or
Fluorescent tube, light emitting diode has power saving and the longer characteristic of service life, therefore gradually replaces conventional light source and be applied to
Various fields, such as traffic sign, backlight module, street lighting, Medical Devices industry.
How application with LED source increases its luminous effect with developing the demand more and more higher for brightness
Rate becomes the important directions made joint efforts by industrial circle to improve its brightness.
Fig. 1 is described is used for the LED package 10 of semiconductor light-emitting elements in the prior art：Including by the envelope of encapsulating structure 11
The semi-conductor LED chips 12 of dress, wherein semi-conductor LED chips 12 have a p-n junction 13, and encapsulating structure 11 is typically thermosetting
Material, such as epoxy resin (epoxy) or thermoplastic glue material.Semi-conductor LED chips 12 pass through a bonding wire (wire) 14 and two
Conducting bracket 15,16 is connected.Because epoxy resin (epoxy) has deterioration (degrading) phenomenon in high temperature, therefore can only
In low temperature environment running.In addition, epoxy resin (epoxy) has very high thermal resistance (thermal resistance) so that Fig. 1's
Structure only provides the heat dissipation approach of the high value of semi-conductor LED chips 12, and the low-power consumption for limiting LED package 10 should
With.
The content of the invention
To solve the above problems, the present invention provides the structure of a photoelectric cell, comprising：Semiconductor lamination, comprising：One
One conductive-type semiconductor layer, an active layer and one second conductive-type semiconductor layer；One first electrode and the first conductive-type semiconductor
Layer electrical connection, and first electrode also includes one first extension electrode；One second electrode is electrically connected with the second conductive-type semiconductor layer；
And multiple limitation electric contact regions are located at semiconductor laminated between the first extension electrode, and multiple limitation electric contact regions
To become being spaced apart for distance.
The present invention provides the structure of a photoelectric cell, comprising：Semiconductor lamination, comprising：One first conductive-type semiconductor
Layer, an active layer and one second conductive-type semiconductor layer；One first electrode is located on semiconductor laminated, and with it is first conductive
Type semiconductor layer is electrically connected, and wherein first electrode also has a width D comprising one2The first extension electrode；One groove is located at half
Between conductor lamination, groove down extends to the first conductive-type semiconductor layer, and bottom portion of groove from the second conductive-type semiconductor layer
Expose first conductive-type semiconductor layer；One limitation electric contact region is located on the second conductive-type semiconductor layer and along recessed
Groove sidewall extends to bottom portion of groove subregion；And one second conductivity type contact layer be located at the second conductive-type semiconductor layer with limitation
Separate between electric contact region and by groove, wherein the second conductivity type contact layer separated is at a distance of one apart from D1, and D1＜
D2。
Brief description of the drawings
Fig. 1 is existing light emitting element structure figure；
Fig. 2 is the light-emitting component top view of first embodiment of the invention；
Fig. 3 A-3B are Fig. 2 region A enlarged drawings；
Fig. 4 A-4C are Fig. 2 another embodiment enlarged drawings of region A；
Fig. 4 D are Fig. 4 C sectional views.
Main element symbol description
10：LED package
11：Encapsulating structure
12：LED chip
13：P-n junction
14：Bonding wire
15,16：Conducting bracket
100：Substrate
101：First conductive-type semiconductor layer
102：First electrode
103：First extension electrode
104：Groove
105：Second conductive-type semiconductor layer
106：Second electrode
107：Limit electric contact region
108：Second conductivity type contact layer
A：Regional area
D1：The second conductivity type contact layer distance positioned at the side of groove two
D2：The width of first extension electrode
Embodiment
In order that the present invention narration it is more detailed with it is complete, refer to description below and coordinate Fig. 2 to Fig. 4 D accompanying drawing.
Top view according to the photoelectric cell of first embodiment of the invention is as follows：As shown in Fig. 2 a photoelectric cell includes a substrate 100,
One first conductive-type semiconductor layer 101, a first electrode 102 and first extension electrode extended out from first electrode 102
103.An active layer (not shown) and one second conductive-type semiconductor layer are formed on the first conductive-type semiconductor layer 101 (not
Display), and form on the second conductive-type semiconductor layer (not shown) a second electrode 106.In the present embodiment, first prolongs
Electrode 103 is stretched for comb form；In other embodiments, the first extension electrode 103 can for arc or other symmetrically or non-symmetrically
Shape.It is electrically connected with addition, forming multiple limitations between one first conductive-type semiconductor layer 101 and one first extension electrode 103
Region 107 is touched, it is plurality of to limit electric contact region 107 to become being spaced apart for distance.In one embodiment, multiple limitations
The spacing distance of electric contact region 107 increases with it and increased with the distance of first electrode 102 so that closer to first electrode
102 limitation electric contact region interval is smaller, therefore has less electric current injection；Further away from the limitation electricity of first electrode 102
Property contact area interval it is bigger, therefore have more electric current injection, and then improve electric current limitation (Current Crowding)
Problem.
Fig. 3 A are Fig. 2 regional areas A enlarged drawing, as shown in Figure 3A：From the second etching downwards of conductive-type semiconductor layer 105
Active layer (not shown) is to exposing the first conductive-type semiconductor layer 101 to form a groove 104, and in the precalculated position of groove
Multiple limitation electric contact regions 107 are formed to reach that this little region makes electrical contact with as isolation, then at limitation electric contact region 107
With exposing one first extension electrode 103 of formation on the first conductive-type semiconductor layer 101.Fig. 3 B are that Fig. 2 regional areas A is another
The enlarged drawing of embodiment, as shown in Figure 3 B：From the subregion of the second conductive-type semiconductor layer 105, downward etch activity layer (does not show
Show) to the first conductive-type semiconductor layer 101 is exposed, with the second conductive-type semiconductor layer of member-retaining portion 105 and amount of activated layer
(not shown), then at part expose the region of the first conductive-type semiconductor layer 101 and the second conductive-type semiconductor layer of part 105 it
It is upper to form multiple limitation electric contact regions 107, then at limitation electric contact region 107 with exposing the first conductive-type semiconductor
One first extension electrode 103 is formed on layer 101.
Fig. 4 A- Fig. 4 D are the enlarged drawing of another embodiments of Fig. 2 regional areas A.As shown in Figure 4 A, in the conductivity type of part second
One second conductivity type contact layer 108 is formed on semiconductor layer 105, and it is downward from the subregion of the second conductivity type contact layer 108
The second conductive-type semiconductor layer 105, active layer (not shown) are etched to the first conductive-type semiconductor layer 101 is exposed, to retain
Part the second conductivity type contact layer 108, the second conductive-type semiconductor layer 105 and active layer (not shown).As shown in Figure 4 B, then at
One is formed on second conductivity type contact layer 108 and limits electric contact region 107, but is partly led as Fig. 4 A expose the first conductivity type
The region that body layer 101 is not covered by limitation electric contact region 107.As shown in Figure 4 C, then at limitation electric contact region 107
One first extension electrode 103 of upper formation, and the first conductive-type semiconductor layer that the covering of the first extension electrode 103 exposes such as Fig. 4 A
101 regions, wherein the first extension electrode 103 is electrically connected with the formation of the first conductive-type semiconductor layer 101.Fig. 4 D are Fig. 4 C section view
Figure.As shown in Figure 4 D, wherein the region of the first conductive-type semiconductor layer 101 exposed such as Fig. 4 A has a groove 104, this groove
104 down extend to the first conductive-type semiconductor layer 101 from the second conductive-type semiconductor layer 105, and bottom portion of groove exposes first
Conductive-type semiconductor layer 101.Electric contact region 107 is limited to be located on the second conductive-type semiconductor layer 105 and along groove
107 side walls extend to bottom portion of groove subregion；One second conductivity type contact layer 108 is located at the second conductive-type semiconductor layer 105
Between limitation electric contact region 107.The second conductivity type contact layer 108 positioned at the side of groove two has one apart from D respectively1
(i.e. a, b point to point), and the width of the first extension electrode 103 is D2.Work as D1＜ D2When, electric current limitation (Current can be improved
Crowding) the problem of.The wherein width D of the first extension electrode 1032Can be between 5 μm~100 μm or 5 μm~80 μm or 5 μm
~60 μm or 5 μm~40 μm or 5 μm~20 μm or 5 μm~10 μm.And work as D2When bigger, the driving voltage V of photoelectric cellfHave
Downward trend.
The material of above-mentioned first electrode 102, the first extension electrode 103 and second electrode 106 may be selected from：Chromium (Cr), titanium
(Ti), the metal material such as nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminium (Al), tungsten (W), tin (Sn) or silver (Ag).It is above-mentioned
The material for limiting electric contact region 107 can be the dielectric materials such as silica, silicon nitride, aluminum oxide, zirconium oxide, or titanium oxide.
Specifically, photoelectric cell includes light emitting diode (LED), photodiode (photodiode), photo resistance
(photo resister), laser (laser), infrared emitter (infrared emitter), Organic Light Emitting Diode
At least one in (organic light-emitting diode) and solar cell (solar cell).Substrate 100 is one
Growth and/or carrying basis.Candidate material can include electrically-conductive backing plate or non-conductive substrate, transparent substrates or impermeable photopolymer substrate.Its
Middle electrically-conductive backing plate material can be metal, for example：Copper (Cu) or germanium (Ge)；Or GaAs (GaAs), indium phosphorus (InP), carborundum
(SiC), silicon (Si), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN).Transparent substrates material
Can be sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN), glass,
Diamond, CVD diamonds, class bore carbon (Diamond-LikeCarbon；DLC), spinelle (spinel, MgAl2O4), silica
(SiOX) and lithium gallium oxide (LiGaO2)。
The above-mentioned conductive-type semiconductor layer 105 of first conductive-type semiconductor layer 101 and second at least two parts one another
Electrically, polarity or dopant are different or respectively to provide the semiconductor material monolayer or multilayer (" multilayer " of electronics and hole
Refer to two layers or more than two layers, it is as follows.), it electrically selects be at least any combination in p-type, N-shaped and i types.
Active layer (not shown) is located between the first conductive-type semiconductor layer 101 and the second conductive-type semiconductor layer 105, is electric energy and light
Can may change or be induced the region changed.Electric energy change or induce luminous energy person for example light emitting diode, liquid crystal display,
Organic Light Emitting Diode；Luminous energy changes or induced electric energy person such as solar cell, photodiode.Above-mentioned first conductivity type is partly led
Body layer 101, active layer (not shown) and second its material of conductive-type semiconductor layer 105 include one or more kinds of element choosings
Group is constituted from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si).
Photoelectric cell according to another embodiment of the present invention is a light emitting diode, and its luminous frequency spectrum can be by changing
The physically or chemically key element of semiconductor monolayer or multilayer is adjusted.Conventional material is such as AlGaInP (AlGaInP) system
Row, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series etc..The structure of active layer (not shown) be as：It is single heterogeneous
Structure (single heterostructure；SH), double-heterostructure (double heterostructure；DH), bilateral is double
Heterojunction structure (double-side double heterostructure；) or multi-layer quantum well (multi-quantum DDH
well；MQW).Furthermore, the logarithm of adjustment quantum well can also change emission wavelength.
In one embodiment of this invention, still it is selectively included between the first conductive-type semiconductor layer 101 and substrate 100
One cushion (buffer layer, not shown).This cushion makes the material system of substrate between two kinds of material systems "
Transition " to semiconductor system material system.For the structure of light emitting diode, on the one hand, cushion is to reduce by two kinds
The unmatched material layer of storeroom lattice.On the other hand, cushion can also be to combine two kinds of materials or two separation knots
Individual layer, multilayer or the structure of structure, its available material is such as：Organic material, inorganic material, metal and semiconductor etc.；Its is optional
Structure is such as：Reflecting layer, heat-conducting layer, conductive layer, Ohmic contact (ohmic contact) layer, anti-deformation layer, Stress Release
(stress release) layer, Stress relief (stress adjustment) layer, engagement (bonding) layer, wavelength conversion layer,
And it is mechanically fixed construction etc..In one embodiment, the material of this cushion can be AlN, GaN, and forming method can be sputter
Or ald (Atomic Layer Deposition, ALD) (Sputter).
One second conductivity type contact layer 108 is also can be selectively formed on second conductive-type semiconductor layer 105.Contact layer is set
It is placed in side of second conductive-type semiconductor layer away from active layer (not shown).Specifically, the second conductivity type contact layer can be with
For optical layer, electrical layer or the combination both it.Optical layer, which can change, to be come from or into the electromagnetism of active layer (not shown)
Radiation or light.At this referred to as " change " and refer at least one optical characteristics for changing electromagnetic radiation or light, afore-mentioned characteristics are included
But it is not limited to frequency, wavelength, intensity, flux, efficiency, colour temperature, color rendering (rendering index), light field (light
) and angle of visibility (angle of view) field.Electrical layer can cause between any group of opposite side of the second conductivity type contact layer
Voltage, resistance, electric current, at least one of numerical value in electric capacity, density, distribution change or have the trend changed.The
The constituent material of two conductivity type contact layers 108 comprising oxide, conductive oxide, transparent oxide, wear with 50% or more
The oxide of saturating rate, metal, relative transparent metal, the metal with 50% or more penetrance, organic matter, inanimate matter, fluorescence
At least one in thing, phosphorescence thing, ceramics, semiconductor, the semiconductor of doping and undoped semiconductor.In some applications,
The material of two conductivity type contact layers 108 is tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum and oxidation
At least one in zinc-tin.If with respect to transparent metal, its thickness is about 0.005 μm~0.6 μm.
Though more than each accompanying drawing and explanation only corresponding specific embodiment respectively, however, illustrated by each embodiment or exposure
Element, embodiment, design criteria and know-why except showing mutually conflict, contradiction each other or in addition to being difficult to common implementing,
We when can according to needed for it is any with reference to, exchange, collocation, coordinate or merge.
Although the present invention is it is stated that as above, but the scope that it is not intended to limiting the invention, implementation order or use
Material and manufacture method.The various modifications and change made for the present invention, neither take off spirit and scope of the invention.
Claims (10)
1. a kind of photoelectric cell, comprising：
It is semiconductor laminated, comprising：First conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer；
First electrode is electrically connected with first conductive-type semiconductor layer, and the first electrode also includes one first extension electrode；And
Multiple limitation electric contact regions are semiconductor laminated between first extension electrode positioned at this, and the plurality of limitation is electrical
Contact area is to become being spaced apart for distance, wherein the spacing distance of the plurality of limitation electric contact region is with itself and first electricity
The distance of pole increases and increased.
2. photoelectric cell as claimed in claim 1, wherein also include substrate, positioned at this it is semiconductor laminated on, the wherein base
Plate is located at the semiconductor laminated opposite side with the first electrode.
3. photoelectric cell as claimed in claim 1 wherein also includes second electrode, it is electrically connected with second conductive-type semiconductor layer
Connect.
4. photoelectric cell as claimed in claim 1, also comprising a groove be located at this it is semiconductor laminated between, the groove is from second
Conductive-type semiconductor layer down extends to first conductive-type semiconductor layer, and the bottom portion of groove exposes first conductivity type and partly led
Body layer.
5. photoelectric cell as claimed in claim 4, also partly leads comprising one second conductivity type contact layer positioned at second conductivity type
Between body layer and the plurality of limitation electric contact region.
6. photoelectric cell as claimed in claim 5, wherein, the groove is located under the recess sidewall comprising a recess sidewall and one
Bottom portion of groove, the limitation electric contact region along the recess sidewall extend to part the bottom portion of groove, this first extension electricity
Side wall of the pole along the limitation electric contact region extends to the bottom portion of groove and contacts first conductive-type semiconductor layer.
7. photoelectric cell as claimed in claim 6, wherein first extension electrode have a width D2；
The second conductivity type contact layer is separated by the groove, wherein the second conductivity type contact layer separated is at a distance of one apart from D1,
And D1＜ D2。
8. photoelectric cell as claimed in claim 1, wherein also include substrate, positioned at this it is semiconductor laminated on, the wherein base
Plate is located at the semiconductor laminated opposite side with the first electrode.
9. photoelectric cell as claimed in claim 7, wherein the first extension electrode width D 2 is between 5 μm~100 μm.
10. photoelectric cell as claimed in claim 4, wherein, the groove is located at the recess sidewall comprising a recess sidewall and one
Under bottom portion of groove, the limitation electric contact region along the recess sidewall extend to part the bottom portion of groove, this first extension
Side wall of the electrode along the limitation electric contact region extends to the bottom portion of groove and contacts first conductive-type semiconductor layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110362728.5A CN103117332B (en) | 2011-11-16 | 2011-11-16 | Photoelectric cell |
| CN201710480015.6A CN107256913B (en) | 2011-11-16 | 2011-11-16 | Photoelectric cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110362728.5A CN103117332B (en) | 2011-11-16 | 2011-11-16 | Photoelectric cell |
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| CN201710480015.6A Division CN107256913B (en) | 2011-11-16 | 2011-11-16 | Photoelectric cell |
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| CN103117332A CN103117332A (en) | 2013-05-22 |
| CN103117332B true CN103117332B (en) | 2017-07-14 |
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| CN201710480015.6A Active CN107256913B (en) | 2011-11-16 | 2011-11-16 | Photoelectric cell |
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| KR102357289B1 (en) * | 2014-07-01 | 2022-02-03 | 서울바이오시스 주식회사 | Light emitting device |
| CN105720155B (en) * | 2016-02-03 | 2018-07-31 | 华灿光电(苏州）有限公司 | A kind of Light-emitting diode LED and preparation method thereof |
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| CN103222074A (en) * | 2010-11-18 | 2013-07-24 | 首尔Opto仪器股份有限公司 | Light emitting diode chip having electrode pad |
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| JP4353232B2 (en) * | 2006-10-24 | 2009-10-28 | ソニー株式会社 | Light emitting element |
| KR101428053B1 (en) * | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| TWI464900B (en) * | 2008-11-26 | 2014-12-11 | Epistar Corp | Optoelectronic semiconductor device |
| TWI527261B (en) * | 2009-09-11 | 2016-03-21 | 晶元光電股份有限公司 | Light-emitting device |
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| CN103222074A (en) * | 2010-11-18 | 2013-07-24 | 首尔Opto仪器股份有限公司 | Light emitting diode chip having electrode pad |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107256913A (en) | 2017-10-17 |
| CN107256913B (en) | 2019-05-07 |
| CN103117332A (en) | 2013-05-22 |
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