JP6949421B2 - 加工方法 - Google Patents
加工方法 Download PDFInfo
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- JP6949421B2 JP6949421B2 JP2017092985A JP2017092985A JP6949421B2 JP 6949421 B2 JP6949421 B2 JP 6949421B2 JP 2017092985 A JP2017092985 A JP 2017092985A JP 2017092985 A JP2017092985 A JP 2017092985A JP 6949421 B2 JP6949421 B2 JP 6949421B2
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- cutting
- metal
- cutting blade
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- workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Milling Processes (AREA)
Description
1a 表面
1b 裏面
3c 第1の方向
3d 第2の方向
3 ストリート
3a 第1のストリート
3b 第2のストリート
5 デバイス
5a 金属を含む層
7 テープ
9 フレーム
2 レーザ加工装置
4 チャックテーブル
4a 保持面
4b クランプ
6 切削ユニット
8 切削ブレード
10 ブレードカバー
12 切削液供給ノズル
14 切削液供給口
16a,16b 切削液供給パイプ
18a,18b,18c 送り方向
Claims (3)
- 第1の方向に伸長する複数の第1の分割予定ラインと、該第1の方向に交差する第2の方向に伸長する複数の第2の分割予定ラインと、からなる分割予定ラインが設定され、該分割予定ラインと重なる金属を有した被加工物を回転する円環状の切削ブレードで切削する加工方法であって、
該被加工物にテープを貼着するテープ貼着ステップと、
該テープ貼着ステップを実施した後、該テープを介して保持テーブルに該被加工物を保持させる保持ステップと、
該保持ステップを実施した後、該切削ブレードを該テープに切り込ませつつ、該第1の分割予定ラインに沿って被加工物を該切削ブレードで切削して第1の切削溝を形成する第1の切削ステップと、
該第1の切削ステップを実施した後、該切削ブレードを該テープに切り込ませつつ、該第2の分割予定ラインに沿って被加工物を該切削ブレードで切削して第2の切削溝を形成する第2の切削ステップと、
該第2の切削ステップを実施した後、該切削ブレードの最下端を該金属の上端より低い高さに位置づけて該第1の切削溝に該切削ブレードを通過させる第1の金属バリ除去ステップと、
該第2の切削ステップを実施した後、該切削ブレードの最下端を該金属の上端より低い高さに位置づけて該第2の切削溝に該切削ブレードを通過させる第2の金属バリ除去ステップと、を備え、
該第1の金属バリ除去ステップ及び該第2の金属バリ除去ステップを実施した後、該第1の切削溝に該切削ブレードを通過させて、該テープから発生したテープバリを除去する第1のテープバリ除去ステップと、
該第1の金属バリ除去ステップ及び該第2の金属バリ除去ステップを実施した後、該第2の切削溝に該切削ブレードを通過させて、該テープから発生したテープバリを除去する第2のテープバリ除去ステップと、を更に備え、
該第1の金属バリ除去ステップと、該第2の金属バリ除去ステップと、は、被加工物に有機酸と酸化剤とを含む液を供給しつつ実施され、
該第1の切削ステップと、該第2の切削ステップと、該第1の金属バリ除去ステップと、該第2の金属バリ除去ステップと、においては、該切削ブレードの回転によって該切削ブレードの最下端が移動する方向が該被加工物の送り方向と一致しており、
該第1のテープバリ除去ステップと、該第2のテープバリ除去ステップと、では、該切削ブレードの回転によって該切削ブレードの最下端が移動する方向が該被加工物の送り方向とは逆となることを特徴とする加工方法。 - 該第1の金属バリ除去ステップと、該第2の金属バリ除去ステップと、では該第1の切削ステップと、該第2の切削ステップと、に比べて該被加工物の送り速度が速いことを特徴とする請求項1に記載の加工方法。
- 該第1の切削ステップと、該第2の切削ステップと、は、該被加工物に有機酸と酸化剤とを含む液が供給されつつ実施されることを特徴とする請求項1乃至2に記載の加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017092985A JP6949421B2 (ja) | 2017-05-09 | 2017-05-09 | 加工方法 |
TW107112254A TWI751324B (zh) | 2017-05-09 | 2018-04-10 | 加工方法 |
SG10201803307SA SG10201803307SA (en) | 2017-05-09 | 2018-04-19 | Method of processing workpiece |
CN201810399315.6A CN108878355B (zh) | 2017-05-09 | 2018-04-28 | 加工方法 |
US15/971,592 US10283410B2 (en) | 2017-05-09 | 2018-05-04 | Method of processing workpiece |
DE102018207131.4A DE102018207131A1 (de) | 2017-05-09 | 2018-05-08 | Verfahren zum Bearbeiten eines Werkstücks |
KR1020180052594A KR102448221B1 (ko) | 2017-05-09 | 2018-05-08 | 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017092985A JP6949421B2 (ja) | 2017-05-09 | 2017-05-09 | 加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018190852A JP2018190852A (ja) | 2018-11-29 |
JP6949421B2 true JP6949421B2 (ja) | 2021-10-13 |
Family
ID=63962734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017092985A Active JP6949421B2 (ja) | 2017-05-09 | 2017-05-09 | 加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10283410B2 (ja) |
JP (1) | JP6949421B2 (ja) |
KR (1) | KR102448221B1 (ja) |
CN (1) | CN108878355B (ja) |
DE (1) | DE102018207131A1 (ja) |
SG (1) | SG10201803307SA (ja) |
TW (1) | TWI751324B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7005281B2 (ja) * | 2017-10-31 | 2022-01-21 | 株式会社ディスコ | 被加工物の加工方法 |
CN114101784A (zh) * | 2021-12-21 | 2022-03-01 | 新疆八一钢铁股份有限公司 | 一种阶梯式剪刃弹扁定尺剪切方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4394210B2 (ja) * | 1999-09-08 | 2010-01-06 | 株式会社ディスコ | 切削方法 |
TWI228780B (en) * | 2000-05-11 | 2005-03-01 | Disco Corp | Semiconductor wafer dividing method |
US20030188685A1 (en) * | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
JP4405719B2 (ja) * | 2002-10-17 | 2010-01-27 | 株式会社ルネサステクノロジ | 半導体ウエハ |
JP2004288962A (ja) * | 2003-03-24 | 2004-10-14 | Tokyo Seimitsu Co Ltd | ダイシング方法 |
JP2005039088A (ja) * | 2003-07-16 | 2005-02-10 | Sanyo Electric Co Ltd | 切削方法、切削装置及び半導体装置の製造方法 |
JP4540421B2 (ja) * | 2004-07-28 | 2010-09-08 | 株式会社ディスコ | ダイシング方法 |
KR100737610B1 (ko) * | 2005-04-28 | 2007-07-10 | 엘에스전선 주식회사 | 반도체용 다이싱 다이 접착필름 |
JP2008130929A (ja) * | 2006-11-22 | 2008-06-05 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP5133660B2 (ja) * | 2007-11-27 | 2013-01-30 | 株式会社ディスコ | ウエーハの裏面に装着された接着フィルムの破断方法 |
JP5226472B2 (ja) * | 2008-11-17 | 2013-07-03 | 株式会社ディスコ | 切削方法 |
JP5659033B2 (ja) * | 2011-02-04 | 2015-01-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP2014007229A (ja) * | 2012-06-22 | 2014-01-16 | Hitachi Chemical Co Ltd | 半導体装置の製造方法 |
JP2015123514A (ja) * | 2013-12-25 | 2015-07-06 | 株式会社ディスコ | 加工方法 |
JP2015126022A (ja) * | 2013-12-25 | 2015-07-06 | 株式会社ディスコ | 加工方法 |
JP6274926B2 (ja) * | 2014-03-17 | 2018-02-07 | 株式会社ディスコ | 切削方法 |
US10071566B2 (en) * | 2015-04-03 | 2018-09-11 | Canon Finetech Nisca Inc. | Transfer material, recorded matter, method of manufacturing recorded matter, image-recording apparatus, and apparatus for manufacturing recorded matter |
-
2017
- 2017-05-09 JP JP2017092985A patent/JP6949421B2/ja active Active
-
2018
- 2018-04-10 TW TW107112254A patent/TWI751324B/zh active
- 2018-04-19 SG SG10201803307SA patent/SG10201803307SA/en unknown
- 2018-04-28 CN CN201810399315.6A patent/CN108878355B/zh active Active
- 2018-05-04 US US15/971,592 patent/US10283410B2/en active Active
- 2018-05-08 DE DE102018207131.4A patent/DE102018207131A1/de active Pending
- 2018-05-08 KR KR1020180052594A patent/KR102448221B1/ko active Active
Also Published As
Publication number | Publication date |
---|---|
US20180330990A1 (en) | 2018-11-15 |
DE102018207131A1 (de) | 2018-11-15 |
SG10201803307SA (en) | 2018-12-28 |
CN108878355B (zh) | 2023-12-15 |
CN108878355A (zh) | 2018-11-23 |
KR20180123637A (ko) | 2018-11-19 |
US10283410B2 (en) | 2019-05-07 |
TW201901782A (zh) | 2019-01-01 |
JP2018190852A (ja) | 2018-11-29 |
KR102448221B1 (ko) | 2022-09-27 |
TWI751324B (zh) | 2022-01-01 |
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