JP6895352B2 - 被加工物を処理する方法 - Google Patents
被加工物を処理する方法 Download PDFInfo
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- JP6895352B2 JP6895352B2 JP2017174957A JP2017174957A JP6895352B2 JP 6895352 B2 JP6895352 B2 JP 6895352B2 JP 2017174957 A JP2017174957 A JP 2017174957A JP 2017174957 A JP2017174957 A JP 2017174957A JP 6895352 B2 JP6895352 B2 JP 6895352B2
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- 238000000034 method Methods 0.000 title claims description 124
- 239000007789 gas Substances 0.000 claims description 109
- 238000012545 processing Methods 0.000 claims description 107
- 229910052721 tungsten Inorganic materials 0.000 claims description 92
- 239000010937 tungsten Substances 0.000 claims description 92
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 87
- 239000002243 precursor Substances 0.000 claims description 49
- 238000001020 plasma etching Methods 0.000 claims description 47
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- -1 tungsten halide Chemical class 0.000 claims description 6
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000006837 decompression Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
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Description
<実験の条件>
工程ST21
内部空間12sの圧力:800mTorr(107Pa)
WF6ガスの流量:170sccm
キャリアガス(Arガス)の流量:600sccm
処理時間:10秒又は30秒
工程ST22
内部空間12sの圧力:800mTorr(107Pa)
キャリアガス(Arガス)の流量:800sccm
処理時間:30秒
工程ST23
内部空間12sの圧力:800mTorr(107Pa)
H2ガスの流量:500sccm
キャリアガス(Arガス)の流量:600sccm
第1の高周波:100MHz、500W
第2の高周波:0W
処理時間:3秒
工程ST24
内部空間12sの圧力:800mTorr(107Pa)
キャリアガス(Arガス)の流量:800sccm
処理時間:30秒
Claims (7)
- 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、
タングステン膜を形成する前記工程における前記被加工物の温度は、0℃以下である、方法。 - 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、光学測定装置によって測定された前記開口の幅を基準値に近づけるように前記タングステン膜を形成する、
方法。 - タングステン膜を形成する前記工程では、前駆体ガスを供給する前記工程と水素ガスのプラズマを生成する前記工程とを各々が含む複数回のサイクルが実行される、請求項1又は2に記載の方法。
- 前記前駆体ガスは、ハロゲン化タングステンガスである、請求項1〜3の何れか一項に記載の方法。
- 前記前駆体ガスは、六フッ化タングステンガスである、請求項1〜3の何れか一項に記載の方法。
- 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、
前記被加工物は、シリコン含有膜、該シリコン含有膜上に設けられた有機膜、該有機膜上に設けられたシリコン含有の反射防止膜、該反射防止膜上に設けられたレジストマスクを有し、
前記シリコン含有膜は、シリコンから形成された第1の膜、及び、該第1の膜上に設けられた第2の膜であり、酸化シリコンから形成された該第2の膜を有し、
前記下地膜は前記反射防止膜であり、前記下地膜上に設けられた前記マスクは前記レジストマスクであり、
該方法は、
前記タングステン膜のプラズマエッチングを実行する前記工程の実行後に、前記反射防止膜のプラズマエッチングを実行する工程と、
前記有機膜のプラズマエッチングを実行する工程であり、該有機膜から有機マスクを形成する、該工程と、
前記第2の膜のプラズマエッチングを実行する工程と、
前記有機マスクを除去する工程と、
前記第1の膜のプラズマエッチングを実行する工程と、
を更に含む、方法。 - 被加工物を処理する方法であって、
前記被加工物は、下地膜、及び、該下地膜上に設けられたマスクを有し、該マスクは、開口を提供しており、
該方法は、
前記被加工物上にタングステン膜を形成する工程であり、該タングステン膜は、前記開口を画成する前記マスクの側壁面に沿って延在する第1領域、及び、前記下地膜上で延在する第2領域を含む、該工程と、
前記第1領域を残し、前記第2領域を除去するように、前記タングステン膜のプラズマエッチングを実行する工程と、
を含み、
タングステン膜を形成する前記工程は、
前記被加工物上にタングステンを含有する前駆体を堆積させるために、前記被加工物に、タングステンを含有する前駆体ガスを供給する工程と、
前記被加工物上の前記前駆体に水素の活性種を供給するために、水素ガスのプラズマを生成する工程と、
を含み、
前記被加工物は、シリコン含有膜、該シリコン含有膜上に設けられた有機膜、該有機膜上に設けられたシリコン含有の反射防止膜、該反射防止膜上に設けられたレジストマスクを有し、
前記シリコン含有膜は、シリコンから形成された第1の膜、及び、該第1の膜上に設けられた第2の膜であり、酸化シリコンから形成された該第2の膜を有し、
前記下地膜は前記第1の膜であり、前記マスクは前記第2の膜から形成されるマスクであり、
該方法は、
前記反射防止膜のプラズマエッチングを実行する工程と、
前記有機膜のプラズマエッチングを実行する工程であり、該有機膜から有機マスクを形成する、該工程と、
前記第2の膜のプラズマエッチングを実行する工程と、
前記有機マスクを除去する工程と、
前記第1の膜のプラズマエッチングを実行する工程と、
を更に含み、
タングステン膜を形成する前記工程、及び、前記タングステン膜のプラズマエッチングを実行する前記工程は、有機マスクを除去する前記工程と前記第1の膜のプラズマエッチングを実行する前記工程との間で実行される、
方法。
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