JP6876754B2 - ウェハ検査システム - Google Patents
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- JP6876754B2 JP6876754B2 JP2019131933A JP2019131933A JP6876754B2 JP 6876754 B2 JP6876754 B2 JP 6876754B2 JP 2019131933 A JP2019131933 A JP 2019131933A JP 2019131933 A JP2019131933 A JP 2019131933A JP 6876754 B2 JP6876754 B2 JP 6876754B2
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
本願は、2011年7月12日出願の「Sample Inspection System」という名称の米国仮出願第61/506,892号に対して優先権を主張し、同出願は、本明細書中に完全に記載されているかの如く参照により援用される。
Claims (21)
- ウェハを検査するように構成されたシステムであって、
前記ウェハ上のエリアに光のパルスを導くように構成された照明サブシステムと、
前記ウェハ内で前記光のパルスをスキャンするように構成されたスキャンサブシステムと、
前記ウェハ上の前記エリアからセンサに散乱する光のパルスを結像するように構成された収集サブシステムであって、前記センサはTDIモードで動作するセンサであり、前記散乱光の1つのパルスの継続時間の間、積分し、次に、前記散乱光の前記1つのパルスに対する任意の電荷を前記センサから転送して出力するように構成された、収集サブシステムと、
前記センサによって生成される前記出力を使用して前記ウェハ上の欠陥を検出するように構成されたコンピュータサブシステムとを備えるシステム。 - 前記スキャンサブシステムは、前記ウェハを回転させ並進させることによって前記ウェハ内で前記光のパルスをスキャンするようにさらに構成され、前記センサは、ピクセルの長方形アレイを備える請求項1に記載のシステム。
- 前記収集サブシステムは、前記散乱光のパルスの1つのパルス内の前記散乱光の全てを、前記センサの1つのピクセルだけに結像するように構成された1以上のアナモルフィック光学素子を備える請求項1に記載のシステム。
- 前記センサは、前記散乱光のパルスの継続時間の間、一方向に積分し、前記散乱光の前記パルスに対する任意の電荷を前記センサから双方向に転送する請求項1に記載のシステム。
- 前記センサは、蛍光輝度増倍管およびエリアセンサを備え、前記センサは、前記散乱光のパルスの継続時間の間で、かつ前記散乱光の前記パルスに対応する前記蛍光輝度増倍管の全ての蛍光エネルギーが完全に減衰するまでの間、積分する請求項1に記載のシステム。
- 前記収集サブシステムの収集開口数の異なるセグメントで収集される前記散乱光の前記パルスを分離するように構成された光学素子をさらに備え、前記センサは、前記異なるセグメントの1つのセグメントを検出するようにさらに構成され、システムは、前記異なるセグメントの別のセグメントを検出するように構成された別のセンサをさらに備える請求項1に記載のシステム。
- 前記センサによって検出される前記異なるセグメントの前記1つのセグメントおよび前記他のセンサによって検出される前記異なるセグメントの前記他のセグメントに応じて、前記光学素子を変更または置換するようにさらに構成される請求項6に記載のシステム。
- 前記収集サブシステムの収集開口数の異なるセグメントで収集される前記散乱光の前記パルスを分離するように構成された光学素子をさらに備え、前記センサは、前記センサの1つの部分を使用して前記異なるセグメントの1つのセグメントを検出し、前記センサの異なる部分を使用して前記異なるセグメントの別のセグメントを検出するようにさらに構成され、前記センサの前記1つの部分および前記異なる部分は、互いに重なり合わず、前記センサ上で隣接しない請求項1に記載のシステム。
- 前記収集サブシステムは、完全には回折制限されない解像度を有する散乱光コレクタを備える請求項1に記載のシステム。
- 蛍光輝度増倍管を含むさらなるセンサをさらに備え、前記収集サブシステムは、前記ウェハ上の前記エリアから前記さらなるセンサに散乱する前記光のパルスを結像するようにさらに構成され、前記さらなるセンサは、前記散乱光のパルスに対するさらなる出力を生成し、前記コンピュータサブシステムは、前記センサにおいてセンサ電子雑音が合計チャネル雑音で優勢となる場合、前記出力の代わりに前記さらなる出力を使用して、前記ウェハ上の欠陥を検出するようにさらに構成される請求項1に記載のシステム。
- 光子計数のために構成されるさらなるセンサをさらに備え、前記収集サブシステムは、前記ウェハ上の前記エリアから前記さらなるセンサに散乱する前記光のパルスを結像するようにさらに構成され、前記さらなるセンサは、前記散乱光のパルスに対するさらなる出力を生成し、前記コンピュータサブシステムは、前記さらなる出力を使用して、前記ウェハ上の欠陥を検出するようにさらに構成される請求項1に記載のシステム。
- 前記照明サブシステムは、周波数変換レーザを備え、前記ウェハ上の前記エリアに導かれる前記光のパルスは、前記光のパルスの継続時間にわたって空間的に変動せず、前記光のパルスの継続時間にわたって実質的に一定の強度を有する請求項1に記載のシステム。
- 前記照明サブシステムは、前記レーザに結合したビーム整形光学素子をさらに備える請求項12に記載のシステム。
- 前記照明サブシステムは、周波数変換レーザを備え、前記ウェハ上の前記エリアに導かれる前記光のパルスは、前記光のパルスの継続時間にわたって実質的に一定の強度を有する請求項1に記載のシステム。
- 前記収集サブシステムと前記センサとの間に配置された微小電気機械システムベースの光スイッチングデバイスをさらに備える請求項1に記載のシステム。
- 少なくとも1つのさらなるセンサをさらに備え、前記光スイッチングデバイスは、前記光のパルスの第1の光のパルスによって生成される前記散乱光のパルスの第1の散乱光のパルスを前記センサに、そして、前記光のパルスの前記第1の光のパルスに続いて、前記光のパルスの第2の光のパルスによって生成される前記散乱光のパルスの第2の散乱光のパルスを前記少なくとも1つさらなるセンサに導くように構成されている請求項15に記載のシステム。
- 前記光スイッチングデバイスは、前記収集サブシステムの収集開口数の異なるセグメントで収集される前記散乱光のパルスを分離するように構成され、前記光スイッチングデバイスは、前記光のパルスの第1の光のパルスによって生成される前記散乱光の前記異なるセグメントの1つのセグメントだけを前記センサに導き、次に、前記第1の光のパルスに続いて、前記光のパルスの第2の光のパルスによって生成される前記散乱光の前記異なるセグメントの別の1つのセグメントだけを前記センサに導くように構成されている請求項15に記載のシステム。
- 前記センサは、前記光のパルスに対して時間的に同期して、所定到達時間を有する前記散乱光のパルスだけを検出する請求項1に記載のシステム。
- 所定到達時間を有する前記散乱光のパルスは、蛍光または光ルミネセンスを含む請求項18に記載のシステム。
- 前記スキャンサブシステムは、前記ウェハを回転させることによって前記ウェハ内で前記光のパルスをスキャンするようにさらに構成され、前記光のパルスが前記ウェハの中心領域を横切ってスキャンされるとき、前記照明サブシステムは、前記光のパルスが前記中心領域を外れて前記ウェハ内でスキャンされるときに比べてより頻繁でなく前記ウェハ上の前記エリアに前記光のパルスを導くようにさらに構成される請求項1に記載のシステム。
- 前記スキャンサブシステムは、前記ウェハを回転させ並進させることによって前記ウェハ内で前記光のパルスをスキャンするようにさらに構成され、前記センサはエリアセンサを備え、前記光のパルスが前記ウェハの中心領域を横切ってスキャンされるときに、前記スキャンサブシステムは、前記ウェハ内で前記光のパルスを1以上の非湾曲直線でスキャンし、前記光のパルスが前記中心領域を外れて前記ウェハ内でスキャンされるとき、前記スキャンサブシステムは、前記ウェハ内で前記光のパルスをスパイラル式にスキャンする請求項1に記載のシステム。
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JP2021073767A JP7210636B2 (ja) | 2011-07-12 | 2021-04-26 | ウェハ検査システム |
JP2023002487A JP2023038254A (ja) | 2011-07-12 | 2023-01-11 | ウェハ検査システム |
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US201161506892P | 2011-07-12 | 2011-07-12 | |
US61/506,892 | 2011-07-12 | ||
US13/544,954 US9279774B2 (en) | 2011-07-12 | 2012-07-09 | Wafer inspection |
US13/544,954 | 2012-07-09 |
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JP2016225870A Division JP6562420B2 (ja) | 2011-07-12 | 2016-11-21 | ウェハ検査システム |
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JP2021073767A Division JP7210636B2 (ja) | 2011-07-12 | 2021-04-26 | ウェハ検査システム |
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JP6876754B2 true JP6876754B2 (ja) | 2021-05-26 |
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JP2014520252A Active JP6047566B2 (ja) | 2011-07-12 | 2012-07-10 | ウェハ検査 |
JP2016225870A Active JP6562420B2 (ja) | 2011-07-12 | 2016-11-21 | ウェハ検査システム |
JP2019131933A Active JP6876754B2 (ja) | 2011-07-12 | 2019-07-17 | ウェハ検査システム |
JP2021073767A Active JP7210636B2 (ja) | 2011-07-12 | 2021-04-26 | ウェハ検査システム |
JP2023002487A Pending JP2023038254A (ja) | 2011-07-12 | 2023-01-11 | ウェハ検査システム |
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JP2014520252A Active JP6047566B2 (ja) | 2011-07-12 | 2012-07-10 | ウェハ検査 |
JP2016225870A Active JP6562420B2 (ja) | 2011-07-12 | 2016-11-21 | ウェハ検査システム |
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JP2021073767A Active JP7210636B2 (ja) | 2011-07-12 | 2021-04-26 | ウェハ検査システム |
JP2023002487A Pending JP2023038254A (ja) | 2011-07-12 | 2023-01-11 | ウェハ検査システム |
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US (3) | US9279774B2 (ja) |
EP (1) | EP2732272B1 (ja) |
JP (5) | JP6047566B2 (ja) |
KR (5) | KR102305382B1 (ja) |
CN (5) | CN107064167B (ja) |
TW (5) | TWI727318B (ja) |
WO (1) | WO2013009757A1 (ja) |
Families Citing this family (113)
Publication number | Priority date | Publication date | Assignee | Title |
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SG190678A1 (en) | 2010-12-16 | 2013-07-31 | Kla Tencor Corp | Wafer inspection |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
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