JP6664848B2 - Optical device - Google Patents

Description

  The present invention relates to an optical device having a light processing function such as a solar cell and a light emitting element.

  FIG. 5 is a sectional view showing a sectional structure of a conventional LED chip 30. As shown in FIG. As shown in the figure, a P-type semiconductor layer 32 is provided on a substrate 31, an I-type semiconductor layer 33 is provided on a P-type semiconductor layer 32, and an N-type semiconductor layer 34 is provided on the I-type semiconductor layer 33. Then, an electrode 35 is provided on a part of the surface of the N-type semiconductor layer 34. As described above, the conventional LED chip 30 includes the substrate 31, the P-type semiconductor layer 32, the I-type semiconductor layer 33, the thin film 24, and the electrodes 35, and has a shell-type LED structure.

  FIG. 6 is an explanatory diagram schematically showing a configuration of an optical device 39 with a lead function in which the LED chip 30 shown in FIG. 5 has a lead function.

  As shown in the figure, the lead frame 41A is electrically connected to the electrode 35 of the LED chip 30 via the gold wire 43, and the LED chip 30 is disposed on the die pad 41BD of the lead frame 41B via the conductive paste 42. Then, the P-type semiconductor layer 32 of the LED chip 30 and the die pad 41BD are electrically connected. When the substrate 31 has conductivity, the P-type semiconductor layer 32 of the LED chip 30 and the die pad 41BD may be electrically connected via the substrate 31.

  Then, the upper portions of the lead frames 41A and 41B, including the die pad 41BD and the entire LED chip 30, are covered with the sealing resin 44 to complete the optical device device 39. A structure similar to such an optical device device 39 is disclosed as, for example, a light emitting element of Patent Document 1.

JP-A-2003-69081

  However, in order to complete the optical device device 39 shown in FIG. 6 from the LED chip 30 shown in FIG. 5, a bonding process using the gold wire 43 between the lead frame 41A and the LED chip 30 and a die pad using the conductive paste 42 The mounting process of the LED chip 30 on the 41BD and the resin sealing process with the sealing resin 44 are required.

  As described above, when the optical device device 39 having the lead function is obtained while incorporating the conventional optical semiconductor element such as the LED chip 30, even after the LED chip 30 as the optical semiconductor element is completed, a plurality of processes are required. And it is difficult to reduce the manufacturing cost.

  The present invention has been made to solve the above problems, and has as its object to provide an optical device having a lead function that can be manufactured relatively easily.

An optical device according to claim 1 of the present invention has a first coated lead wire having one end and the other end, the periphery of the first conductive portion being coated with a first insulator, and one end. And a second coated lead wire having a second conductive portion surrounding the second conductive portion with a second insulator. The other end of the first coated lead wire is a first conductive portion. Has a first exposed conductive portion, and the other end of the second covered lead has a second conductive exposed portion having a second exposed conductive portion, and has a first covered lead. An optical device structure formed electrically connected to the first conductive exposed portion of a wire, wherein the optical device structure is formed on the first conductive exposed portion of the first covered lead. a first element forming layer which is formed by coupling, the first cover portion that leads the contact of the first element formation layer removal And a second element forming layer formed over the outer periphery, the second third element formed over the outer periphery except the portion in contact with said first coating leads of the element forming layer Forming layer and a transparent conductive film formed so as to cover an outer periphery of the third element forming layer except for a portion in contact with the first covering lead wire and connected to the second conductive exposed portion wherein the door, the first to third element forming layer has at least one optical processing function of the photoelectric conversion function and electro-optic conversion function.

  The optical device device according to the first aspect of the present invention has a relatively simple configuration of an optical device structure and first and second coated lead wires.

  Therefore, the first to third element formation layers and the transparent conductive film are sequentially formed starting from the first conductive exposed portion of the first covered lead wire, and the last transparent conductive film is formed as the second covered lead wire. The basic structure of the optical device can be realized by a relatively simple manufacturing method of connecting to the two conductive exposed portions.

FIG. 1 is an explanatory diagram illustrating a configuration of a thin film manufacturing apparatus according to a first embodiment of the present invention. FIG. 3 is an explanatory diagram showing a configuration of a thin film manufacturing system for executing a thin film manufacturing method according to a second embodiment of the present invention. FIG. 9 is an explanatory diagram showing a detailed structure of a spherical semiconductor device with lead wires obtained by a thin film manufacturing method according to a second embodiment. FIG. 9 is an explanatory diagram illustrating a detailed structure of an optical device device according to a third embodiment of the present invention. It is sectional drawing which shows the cross-section of the conventional LED chip. FIG. 6 is an explanatory diagram schematically showing a configuration of a conventional optical device device 39 in which the LED chip shown in FIG. 5 has a read function.

<First Embodiment>
FIG. 1 is an explanatory diagram showing a configuration of a thin film manufacturing apparatus 50 according to Embodiment 1 of the present invention. As shown in the figure, the thin film manufacturing apparatus 50 includes an atomizing apparatus including an atomizing container 1 and a mist generating section 3, and a manufacturing heater mechanism 10 as a lead wire holding section.

  The atomization container 1 contains the raw material solution 2 inside. One or a plurality of mist generating units 3 are provided below the bottom surface outside the atomizing container 1, and atomize the raw material solution contained in the atomizing container 1 to obtain a droplet-shaped raw material mist. Specifically, the mist generating unit 3 is an ultrasonic oscillator that generates ultrasonic waves, and is housed in the atomizing container 1 by applying ultrasonic waves to the atomizing container 1 using the ultrasonic oscillator. The raw material solution 2 to be sprayed is atomized into droplets to generate a raw material mist in the atomization container 1.

  The manufacturing heater mechanism 10 serving as a lead wire holding part is detachably installed on the upper part of the atomization container 1, and includes a heater 4 and a heat sink 5. The heater 4 has a heating function, and the heat sink 5 is made of, for example, aluminum. The heat sink 5 is provided so as to be connected to the heater 4. One end of the covered lead wire 11 is attached to the bottom surface, and the heat from the heater 4 is covered by the covered lead. It functions as a heat conducting part that conducts to the wire 11.

  The covered lead wire 11 has a lead wire conductive portion 11m made of, for example, a copper wire, and the periphery of the lead wire conductive portion 11m is covered with a wire cover portion 11c made of a heat-resistant insulator such as alumina. One end of the coated lead wire 11 having such a structure is fixed to the heat sink 5 on the upper side in the figure, and a part of the lead wire conductive portion 11m is exposed at the other end on the lower side in the figure. At this time, the other end of the coated lead wire 11 is disposed in the atomization container 1 without being immersed in the raw material solution 2.

  That is, the heat sink 5 as a heat conducting part holds the covered lead wire 11 so that the other end of the covered lead wire 11 is at the lowermost position with the covered lead wire 11 hanging vertically.

  The thin film manufacturing apparatus 50 having such a configuration generates heat from the heater 4 while the coated lead wire 11 is held by the manufacturing heater mechanism 10 which is a lead wire holding unit, and atomizes by the mist generation unit 3. A thin film forming process for generating a raw material mist in the container 1 can be performed.

  The thin-film manufacturing apparatus 50 according to the first embodiment performs the above-described thin-film forming process to generate a raw material mist in the atomization container 1 while heating the lead wire conductive portion 11m at the other end of the covered lead wire 11. Thereby, the substantially spherical thin film 20 can be formed around the lead wire conductive portion 11m at the other end of the covered lead wire 11.

  The thin film 20 has a spherical shape because the raw material mist of the raw material solution 2 is filled in the atomization container 1, so that the entire coated lead wire 11 gets wet and droplets accumulate at the other end of the coated lead wire 11 by its own weight. . At this time, since the coated lead wire 11 is heated by the heater 4, the solvent of the raw material mist evaporates and solidifies. Therefore, by heating the coated lead wire 11 at a temperature at which the solvent of the raw material mist does not evaporate instantaneously, the other end of the coated lead wire 11 has a substantially spherical thin film 20 centered on the exposed lead conductive portion 11m. Can be formed.

  As a result, in the thin film manufacturing apparatus 50 of the first embodiment, in addition to the atomizing apparatus (the atomizing container 1 and the mist generating unit 3), only the manufacturing heater mechanism 10 and the coated lead wire 11 that are the lead wire holding units are added. With a relatively simple apparatus configuration, the substantially spherical thin film 20 can be formed relatively inexpensively.

  In addition, the atomizing device in the thin film manufacturing apparatus 50 has a relatively simple configuration in which the mist generating unit 3 is installed below the bottom surface of the atomizing container 1, and can be realized at low cost.

  Further, in the thin film manufacturing apparatus 50 of the first embodiment, since the thin film 20 is formed in the atomization container 1, there is no need to provide a film formation processing chamber for forming a thin film outside the atomization container 1. Therefore, since the carrier gas for transporting the raw material mist to the film formation processing chamber is not required, the configuration of the apparatus can be further simplified.

  In addition, since a film formation processing chamber outside the atomization container 1 is not required, a mist injection mechanism such as a nozzle for injecting a raw material mist used in the film formation processing chamber is not necessarily required. The clogging does not occur, and the maintenance cycle of the thin film manufacturing apparatus 50 can be set relatively long.

  Further, since a substrate serving as a base for forming the thin film 24 is not required, the substantially spherical thin film 24 can be formed inexpensively.

  Further, a vacuum process such as MOCVD has a disadvantage that the manufacturing cost is high, and a liquid phase method such as an impregnation method has a disadvantage that film formation at a high temperature is difficult and film quality is poor. However, the thin film manufacturing apparatus 50 according to the first embodiment has a disadvantage. By using a raw material mist obtained by converting the raw material solution 2 into a mist, the above disadvantages can be overcome, and a high-quality thin film 20 can be formed relatively inexpensively.

  The heat sink 5 holds the covered lead wire 11 so that the other end of the covered lead wire 11 is at the lowest position in a state where the covered lead wire 11 is hung vertically.

  For this reason, the thin film manufacturing apparatus 50 of the first embodiment arranges the other end of the coated lead wire 11 at a position closest to the liquid surface of the raw material solution 2, and thereby the lowermost part of the coated lead wire 11 is formed by the thin film forming process. At the tip, a substantially spherical thin film 20 centering on the lead wire conductive portion 11m can be efficiently formed.

  Further, the atomizing container 1 is provided with a cooling mechanism 7 in a lower region where the raw material solution 2 is stored. As the cooling mechanism 7, for example, a mode in which a flow path is provided on a side surface of the atomizing container 1 and cooling water flows through the flow path can be considered.

  In the thin film manufacturing apparatus 50 of the first embodiment, by providing the atomizing container 1 with the cooling mechanism 7, the raw material solution 2 can be effectively cooled, and the raw material solution 2 evaporates during the execution of the thin film forming process. The phenomenon can be prevented.

  Further, the atomization container 1 has a liquid level sensor 6 for detecting the liquid level of the raw material solution 2. Therefore, by monitoring the liquid level of the raw material solution 2 with the liquid level sensor 6, the raw material mist generating capability of the mist generating unit 3 and the raw material solution (not shown) are adjusted so that the liquid level of the raw material solution 2 becomes constant. By controlling the supply capacity of the supply mechanism 2 and the like, the amount of the raw material mist in the atomization container 1 can be kept constant, and the raw material solution 2 can be prevented from running out.

  In addition, by using an ultrasonic vibrator that generates ultrasonic waves as the mist generating unit 3, the raw material mist can be uniformly generated in the atomization container 1. Can be.

<Embodiment 2>
FIG. 2 is an explanatory diagram showing a configuration of a thin film manufacturing system for executing a thin film manufacturing method according to a second embodiment of the present invention. Specifically, the thin film manufacturing system is configured by four thin film manufacturing apparatuses 50A to 50D each having a configuration equivalent to the thin film manufacturing apparatus 50 shown in FIG. are doing.

  The atomization container 1A of the thin film manufacturing apparatus 50A contains the raw material solution 2A inside. In the case of the basic mode, the raw material solution 2A is a mixed solution of “copper acetylacetonate + methanol + water”.

  The atomization container 1B of the thin film manufacturing apparatus 50B contains the raw material solution 2B inside. In the case of the basic mode, the raw material solution 2B is a mixed solution of “copper acetylacetonate + zinc acetylacetonate + methanol + water”.

  The atomization container 1C of the thin film manufacturing apparatus 50C contains a raw material solution 2C inside. In the case of the basic mode, the raw material solution 2C is a mixed solution of “zinc acetylacetonate + methanol + water”.

  The atomization container 1D of the thin film manufacturing apparatus 50D contains a raw material solution 2D inside. In the case of the basic mode, the raw material solution 2D is a mixed solution of “zinc acetylacetonate + gallium acetylacetonate + methanol + water”.

  As described above, the atomization containers 1A to 1D (plurality of nebulization containers) different from each other constitute components corresponding to the thin film production devices 50A to 50D (plurality of thin film production devices), and correspond to the thin film production devices 50A to 50D. Then, a plurality of different raw material solutions 2A to 2D are accommodated in the atomization containers 1A to 1D.

  In addition, similarly to the atomization container 1 of Embodiment 1 having the liquid level sensor 6 and the cooling mechanism 7, the atomization containers 1A to 1D have the liquid level sensors 6A to 6D and the cooling mechanisms 7A to 7D, respectively. ing.

  A mist generating unit 3A (one or more) is provided at a lower bottom portion outside the atomizing container 1A, and a mist generating unit 3B is provided at a lower bottom portion of the atomizing container 1B. Is provided with a mist generating section 3C, and a mist generating section 3D is provided below the atomization container 1D.

  As described above, at least one mist generating unit 3A to 3D (a plurality of mist generating units) independent of each other is provided corresponding to the thin film manufacturing apparatuses 50A to 50D.

  On the other hand, the manufacturing heater mechanism 10 serving as the lead wire holding unit has the same configuration as the manufacturing heater mechanism 10 shown in FIG. 1, and one unit of the manufacturing heater mechanism 10 is shared by the thin film manufacturing apparatuses 50A to 50D. , Can be attached to and detached from each of the atomizing containers 1A to 1D.

  Hereinafter, a thin film manufacturing method according to the second embodiment, which is performed using the thin film manufacturing system (thin film manufacturing apparatuses 50A to 50D) illustrated in FIG. 2, will be described.

  In the thin film manufacturing method according to the second embodiment, the thin film forming process is performed between the thin film manufacturing apparatuses 50A to 50D according to the setting execution order (predetermined order) performed by 50A, 50B, 50C, and 50D.

  First, as shown in FIG. 2A, the first thin film forming process is performed with the manufacturing heater mechanism 10 installed above the atomization container 1.

  Then, a substantially spherical thin film 21 can be formed around the lead wire conductive portion 11m at the other end of the covered lead wire 11. At this time, the thin film 21 formed from the raw material mist in the basic mode of the raw material solution 2A becomes a copper oxide film (CuO) and functions as a P-type semiconductor layer (one conductive type semiconductor layer).

  Then, with one end of the coated lead wire 11 having the thin film 21 formed on the other end attached to the heat sink 5, the manufacturing heater mechanism 10 is removed from the atomization container 1A.

  Next, as shown in FIG. 2 (b), with one end of the covered lead wire 11 having the thin film 21 formed on the other end fixed to the heat sink 5, the manufacturing heater mechanism 10 is moved to the atomization container 1B. Attach on top. Then, in this state, the second thin film forming process is performed.

  Then, by forming the thin film 22 around the thin film 21 reflecting the outer shape of the thin film 21, the laminated structure of the substantially spherical thin films 21 and 22 around the lead conductive portion 11m at the other end of the covered lead wire 11 is formed. Can be obtained. At this time, the thin film 22 formed from the raw material mist in the basic mode of the raw material solution 2B becomes a copper zinc oxide film (ZnCuO) and functions as an I-type semiconductor layer.

  Then, with one end of the covered lead wire 11 having the laminated structure of the thin films 21 and 22 formed on the other end fixed to the heat sink 5, the manufacturing heater mechanism 10 is removed from the atomization container 1B.

  Next, as shown in FIG. 2 (c), with the one end of the covered lead wire 11 having the laminated structure of the thin films 21 and 22 formed on the other end fixed to the heat sink 5, the manufacturing heater mechanism 10 is turned on. Attached to the upper part of the atomization container 1C. Then, in this state, the third thin film forming process is performed.

  Then, by forming the thin film 23 around the thin film 22 reflecting the outer shape of the thin film 22, the laminated structure of the substantially spherical thin films 21 to 23 around the lead conductive portion 11m at the other end of the covered lead wire 11 is formed. Can be obtained. At this time, the thin film 23 formed from the raw material mist in the basic mode of the raw material solution 2C becomes a zinc oxide film (ZnO) and functions as an N-type semiconductor layer (the other conductive semiconductor layer).

  Then, with one end of the covered lead wire 11 having the laminated structure of the thin films 21 to 23 formed on the other end fixed to the heat sink 5, the manufacturing heater mechanism 10 is removed from the atomization container 1C.

  Then, one end of the covered lead wire 12 (second covered lead wire) having the exposed lead conductive portion 12m at the other end is attached to the bottom surface of the heat sink 5 so as to be adjacent to the covered lead wire 11. A preparatory process for arranging the coated lead wire 12 so that the other end thereof is positioned close to the thin film 23 formed on the other end of the lead wire is executed. The coated lead wire 12 has a lead wire conductive portion 12m made of, for example, a copper wire, and the lead wire covered portion made of a heat-resistant insulating material such as alumina around the lead wire conductive portion 12m, similarly to the coated lead wire 11. 12c.

  Next, as shown in FIG. 2D, one end of the covered lead wire 11 having the laminated structure of the thin films 21 to 23 formed on the other end and one end of the covered lead wire 12 are fixed to the heat sink 5. Then, the manufacturing heater mechanism 10 is mounted on the upper part of the atomization container 1D. Then, in this state, the fourth thin film forming process is performed.

  Then, by forming the thin film 24 around the thin film 23 reflecting the outer shape of the thin film 23, the laminated structure of the substantially spherical thin films 21 to 24 around the lead wire conductive portion 11m at the other end of the covered lead wire 11 is formed. Can be obtained. At this time, the thin film 24 formed from the raw material mist in the basic mode of the raw material solution 2D becomes a GZO film and functions as a transparent conductive film. As a result, it is possible to obtain the thin film laminated structure 26 including the thin films 21 to 24.

  Further, the thin film 24 is formed so as to be connected also to the lead wire conductive portion 12m of the covered lead wire 12 arranged close to the thin film 23.

  FIG. 3 is an explanatory view showing a detailed structure of the spherical semiconductor element 9 with leads obtained by the thin film manufacturing method of the second embodiment. As shown in the figure, the thin film 21 to 24 constitute a substantially spherical thin film laminated structure 26 by the thin film manufacturing method of the second embodiment, and the thin film 21 is electrically connected to the lead wire conductive portion 11m of the coated lead wire 11. , And the lead wire conductive portion 12m of the coated lead wire 12 is electrically connected to the thin film 24. Therefore, the spherical semiconductor element 9 with the lead wire composed of the thin film laminated structure 26, the covered lead wire 11 and the covered lead wire 12 can be finally obtained.

  As described above, in the thin film manufacturing method according to the second embodiment, in each of the thin film manufacturing apparatuses 50A to 50D configuring the thin film manufacturing system, the manufacturing heater mechanism 10 is installed, and the thin film manufacturing apparatus described above is installed in a state where the manufacturing heater mechanism 10 is installed. The thin film forming process is performed once each.

  The thin-film manufacturing method according to the second embodiment executes the above-described thin-film forming process once between the thin-film manufacturing apparatuses 50A to 50D in a setting execution order (predetermined order), whereby the other end of the covered lead wire 11 is formed. The spherical semiconductor element 9 with the lead wire having the thin film laminated structure 26 in which the thin films 21 to 24 (a plurality of thin films) are laminated around the lead wire conductive portion 11m can be obtained.

  As described above, the thin film manufacturing method according to the second embodiment includes one unit of the manufacturing heater mechanism 10, the coated lead wire 11, and the coated lead, in addition to the atomization device (the atomization containers 1 </ b> A to 1 </ b> D + mist generation units 3 </ b> A to 3 </ b> D). With the system configuration in which only the wire 12 is added, the spherical semiconductor element 9 with a lead wire having the substantially spherical thin film laminated structure 26 can be manufactured relatively inexpensively.

  Further, among the thin film manufacturing apparatuses 50A to 50D, the thin film manufacturing apparatus 50D that executes the last thin film forming process in the setting execution order is the final thin film manufacturing apparatus. As described above, the final raw material solution, which is the raw material solution 2D for the thin film manufacturing apparatus 50D, is a mixed solution of “zinc acetylacetonate + gallium acetylacetonate + methanol + water”. GZO film can be obtained.

  As described above, the thin film manufacturing method according to the second embodiment allows the light to pass through the thin film laminated structure 26 by forming the thin film 24 that is the outermost film of the thin film laminated structure 26 as a transparent conductive film, In addition, a good electrical connection with the lead conductive portion 12m of the covered lead wire 12 can be maintained.

  Further, in the thin film manufacturing method according to the second embodiment, the above-mentioned preliminary preparation processing is executed prior to the last thin film formation processing to be performed for the fourth time.

  As described above, according to the thin film manufacturing method of the second embodiment, after the above-described preliminary preparation processing, the thin film manufacturing apparatus 50D, which is the final thin film manufacturing apparatus, executes the last thin film forming processing, thereby forming the thin film laminated structure 26 and the coating. The covered lead wire 12 can be used as a lead wire of the spherical semiconductor element 9 with a lead wire by connecting the lead wire 12 (second covered lead) to the lead wire conductive portion 12m at the other end.

  Further, by using the mixed solution of the basic mode as the raw material solutions 2A to 2D, it is possible to obtain a semiconductor element having a light processing function of a PIN structure as the spherical semiconductor element 9 with leads. As the light processing function, a power generation function of a solar cell, a light emitting function of replacing an LED current with light, and the like can be considered.

  Further, even if the raw material solution 2A and the raw material solution 2C in the basic mode are reversed and the thin film 21 and the thin film 23 are replaced to form the thin film laminated structure 26, the light processing function of the PIN structure (NIP structure) is similarly obtained. Can be obtained.

(Other Embodiments of Raw Material Solutions 2A to 2D)
In the method of manufacturing a thin film according to the above-described second embodiment, a mixed solution of the following other aspects is considered in addition to the basic aspects of the raw material solutions 2A to 2D.

  The raw material solution 2A is a mixed solution of “copper thiocyanate + methanol + water”. The raw material solution 2B is a mixed solution of “lead iodide + methyl ammonium iodide + methanol + water”. The raw material solution 2C is a mixed solution of “titanium acetylacetonate + methanol + water”. The raw material solution 2D is a mixed solution of “tin chloride + ammonium fluoride + water”.

  When the method of manufacturing a thin film according to the second embodiment is performed in another mode of the raw material solutions 2A to 2D, a thin film laminated structure 26 having the following structure can be obtained.

The thin film 21 formed from the raw material mist of the raw material solution 2A becomes a CuSCN film and functions as a hole transport layer. The thin film 22 formed from the raw material mist of the raw material solution 2B becomes a CH ₃ NH ₃ PbI ₃ film and functions as a photoelectric conversion layer or a light-electric conversion layer. The thin film 23 formed from the raw material mist of the raw material solution 2C becomes a TiO ₂ film and functions as an electron transport layer. The thin film 24 formed from the raw material mist of the raw material solution 2D becomes an FTO film and functions as a transparent conductive film.

  As described above, by using the mixed solution of the above-described other embodiment as the raw material solutions 2A to 2D, the spherical semiconductor element 9 with a lead wire can be formed from a hole transport layer, a photoelectric conversion layer (an electro-optical conversion layer), and an electron transport layer. It is possible to obtain a semiconductor device having a light processing function having a structure as described below. As the light processing function, a power generation function of a solar cell, a light emitting function of replacing an LED current with light, and the like can be considered.

  Also, even if the raw material solution 2A and the raw material solution 2C are reversed and the thin film 21 and the thin film 23 are replaced to form the thin film laminated structure 26, the electron transport layer, the photoelectric conversion layer (electric light conversion layer) And an optical device element having a structure including the hole transport layer.

  In addition to the above-described basic mode and other modes, as long as the thin film laminated structure 26 (thin films 21 to 24) is a constituent material having a light processing function, it can be used as the raw material solutions 2A to 2D.

<Embodiment 3>
FIG. 4 is an explanatory diagram showing a detailed structure of an optical device device 19 according to Embodiment 3 of the present invention. As shown in the figure, the optical device device 19 includes all of the structure of the spherical semiconductor element 9 with the lead wire finally obtained by the thin film manufacturing method of the second embodiment, and further covers the entire thin film 24. 25 are formed.

  Therefore, the spherical semiconductor element 9 with leads before forming the cover 25 can be manufactured by the thin film manufacturing method of the second embodiment.

  After completing the spherical semiconductor element 9 with leads shown in FIG. 3, the optical device device 19 according to the third embodiment takes out the spherical semiconductor element 9 with leads from the atomization container 1D and one end of the covered lead 11. Then, one end of the covered lead wire 12 is removed from the heat sink 5, and only the spherical semiconductor element 9 with the lead wire is taken out.

  Then, for example, by using a mold to form a cover 25 which is an insulating coating portion over the entire periphery of the thin film 24 of the spherical semiconductor element 9 with lead wires, the optical device device 19 can be obtained. The cover 25, which is an insulating coating, is made of a material having insulation and transparency and having excellent photosensitivity.

  Hereinafter, the optical device device 19 according to the third embodiment will be described in detail. The optical device device 19 includes a covered lead wire 11, a covered lead wire 12, a thin film laminated structure 26, and a cover 25.

  The covered lead wire 11 (first covered lead wire) has one end and the other end, and the lead wire conductive portion 11m (first conductive portion) is covered with the lead wire covered portion 11c (first insulator). Have been.

  The covered lead wire 12 (second covered lead wire) has one end and the other end, and the periphery of the lead wire conductive portion 12m (second conductive portion) is a lead wire covered portion 12c (second insulator). It is covered with. In FIG. 4, the upper ends of the coated lead wires 11 and 12 are defined as one end, and the lower ends are defined as the other ends.

  The other end of the coated lead wire 11 has a conductive exposed portion R11 (first conductive exposed portion) where a part of the lead wire conductive portion 11m is exposed, and the other end of the coated lead wire 12 is a lead wire conductive portion. It has a conductive exposed portion R12 (second conductive exposed portion) in which a part of 12m is exposed.

  The thin film laminated structure 26 is formed as an optical device structure by being electrically connected to the conductive exposed portion R11 of the covered lead wire 11.

  The thin film laminated structure 26 which is an optical device structure is formed so as to cover the thin film 21 (first element forming layer) formed by being connected to the conductive exposed portion R11 of the covered lead wire 11 and the entire periphery of the thin film 21. A thin film 22 (second element formation layer) to be formed, a thin film 23 (third element formation layer) formed to cover the entire periphery of the thin film 22, a thin film 23 formed to cover the entire periphery of the thin film 23, and And a thin film 24 (transparent conductive film) formed so as to bury the exposed conductive portion R12 of the covered lead wire 12 therein.

  The thin films 21 to 23 (first to third element formation layers) have at least one optical processing function of a photoelectric conversion function and an electro-optical conversion function by a combination thereof.

  For example, in a thin film manufacturing system (thin film manufacturing apparatuses 50A to 50D) that performs the thin film manufacturing method according to the second embodiment, when the basic mode is adopted as the raw material solutions 2A to 2D, a PIN structure is formed by the thin films 21 to 23. Thereby, at least one of the photoelectric conversion function and the light-to-light conversion function can be provided.

  Further, in the thin film manufacturing system (thin film manufacturing apparatuses 50A to 50D) that performs the thin film manufacturing method according to the second embodiment, when another mode is adopted as the raw material solutions 2A to 2D, the hole transport layer, the photoelectric conversion layer (electric light By forming a structure including the conversion layer and the electron transport layer, it is possible to have at least one optical processing function of a photoelectric conversion function and an electro-optical conversion function.

  Therefore, the optical device device 19 according to the third embodiment includes the lead-containing spherical semiconductor element 9 having a lead function with a relatively simple configuration of the thin film laminated structure 26 and the coated lead wires 11 and 12 as the optical device structure. Has been realized.

  In this manner, the thin films 21 to 23 (first to third element formation layers) and the thin film 24 (transparent conductive film) are sequentially formed with the conductive exposed portion R11 (first conductive exposed portion) of the covered lead wire 11 as a base point. Then, the outermost thin film 24 is connected to the conductive exposed portion R12 (second conductive exposed portion) of the coated lead wire 12 by a relatively simple manufacturing method. The semiconductor element 9 can be obtained. The method for manufacturing the spherical semiconductor element 9 with leads is described in detail as the method for manufacturing a thin film according to the second embodiment.

  As described above, the optical device device 19 according to the third embodiment can obtain the lead-shaped spherical semiconductor element 9 having a lead function by a relatively simple manufacturing method.

  Further, the optical device device 19 further includes a cover 25 (insulating coating portion) which has insulating properties and transparency and is formed so as to cover the entire periphery of the thin film laminated structure 26.

  Therefore, the optical device device 19 can protect the thin film laminated structure 26 from the outside without impairing the light processing function of the thin film laminated structure 26 which is the optical device structure. Further, as described above, the process of forming the cover 25 is a process of forming the thin film laminated structure 26 over the entire periphery thereof by using, for example, a mold, so that the optical device device 19 of the third embodiment is compared. Can be easily manufactured.

  Further, as compared with the conventional optical device 39 shown in FIGS. 5 and 6, the conductive paste 42 and the gold wire 43 as the auxiliary members are not required, so that the optical device 19 can be manufactured relatively inexpensively. Can be.

  In addition, the optical device device 19 of the third embodiment can replace the lead frames 41A and 41B with the covered lead wires 11 and 12 as a component for realizing the lead function, as compared with the conventional optical device device 39. The optical device device 19 can be manufactured relatively inexpensively.

  Further, since the conductive exposed portion R12 of the covered lead wire 12 is embedded in the thin film 24 (transparent conductive film), the covered lead wire 12 is connected to the outside of the thin film laminated structure 26, which is an optical device structure, for transmitting an electric signal. It can be used as a lead wire with good stability.

  Further, the thin film laminated structure 26 as an optical device structure has the following geometrical characteristics.

  The thin film 21 (first element formation layer) is formed in a substantially spherical shape with the conductive exposed portion R11 of the lead wire conductive portion 11m at the other end of the covered lead wire 11 as the center.

  The thin film 22 (second element forming layer) is formed reflecting the outer shape of the thin film 21, the thin film 23 (third element forming layer) is formed reflecting the outer shape of the thin film 22, and the thin film 24 (transparent conductive film) is formed. ) Is formed reflecting the shape of the thin film 23, so that the thin film laminated structure 26 is formed in a substantially spherical shape with the conductive exposed portion R11 of the lead wire conductive portion 11m at the other end of the covered lead wire 11 as the center. It is characterized by:

  As described above, by forming the thin-film laminated structure 26 in the optical device device 19 of the third embodiment into a substantially spherical shape, it is possible to improve characteristics of a light processing function such as light absorption or light emission efficiency.

  Further, the cover 25 (insulating coating portion) is formed by reflecting the outer shape of the thin film laminated structure 26, so that the combined structure of the thin film laminated structure 26 and the cover 25 makes the conductive exposed portion R11 of the coated lead wire 11 It is characterized by being formed in a substantially spherical shape as the center.

  As described above, the optical device device 19 according to the third embodiment has a light processing function by forming the combined structure of the thin film laminated structure 26 as the optical device structure and the cover 25 as the insulating coating portion into a substantially spherical shape. The thin film laminated structure 26 can be protected from the outside without deteriorating the characteristics.

  Further, the cover 25, which is an insulating coating, is made of any one of epoxy resin, silicone resin, and glass.

  Therefore, the optical device device 19 according to the third embodiment can obtain the cover 25 having excellent transparency, strength, and photosensitivity.

  Furthermore, by using the mixed solution of the basic mode as the raw material solutions 2A to 2D, the thin film 21 (first element forming layer) becomes a P-type semiconductor layer (one conductive type semiconductor layer) and the thin film 22 (second conductive type semiconductor layer). The element formation layer) becomes an I-type semiconductor layer, the thin film 23 (third element formation layer) becomes an N-type semiconductor layer (the other conductivity type semiconductor layer), and a PIN structure is realized in the thin film laminated structure 26. Can be.

  Therefore, the optical device device 19 according to the third embodiment employs the basic mode of the raw material solutions 2A to 2D, so that the optical semiconductor such as a solar cell or an LED has an optical processing function by the PIN structure in the thin film laminated structure 26. An element can be obtained.

  Note that the raw material solution 2A and the raw material solution 2C are reversed, and the thin film 21 and the thin film 23 are replaced to form a thin film laminated structure 26 in which the thin film 21 is an N-type semiconductor layer and the thin film 23 is a P-type semiconductor layer. , PIN structure (NIP structure).

  In addition, by adopting the basic mode as the raw material solutions 2A to 2D and realizing the PIN structure by the oxide, there is an advantage that the PIN structure is relatively easily manufactured.

  Furthermore, by employing a mixed solution of another embodiment as the raw material solutions 2A to 2D, the thin film 21 (first element formation layer) becomes a hole transport layer (one carrier transport layer) and the thin film 22 (second carrier transport layer). The element forming layer) becomes a photoelectric conversion layer or an electro-optical conversion layer, the thin film 23 (third element forming layer) becomes an electron transporting layer (transporting layer of the other carrier), and the hole transporting layer and the photoelectric A structure including a conversion layer (light-to-light conversion layer) and an electron transport layer can be realized.

  Therefore, the optical device device 19 according to the third embodiment adopts another mode of the raw material solutions 2A to 2D, so that the hole transport layer, the photoelectric conversion layer (light-to-light conversion layer), and the electron With the structure including the transport layer, an optical semiconductor device having a light processing function such as a solar cell or an LED can be obtained.

  Note that the raw material solution 2A and the raw material solution 2C are reversed, and the thin film 21 and the thin film 23 are replaced to form a thin film laminated structure 26 in which the thin film 21 is an electron transport layer and the thin film 23 is a hole transport layer. Is also good.

  Further, by adopting another embodiment of the raw material solutions 2A to 2D and using a mixed solution of “lead iodide + methylammonium iodide + methanol + water” as the raw material solution 2B, the photoelectric conversion layer (light-to-light conversion layer) The thin film 22 can be obtained in a perovskite structure.

<Others>
In the present invention, each embodiment can be freely combined, or each embodiment can be appropriately modified or omitted within the scope of the invention.

Reference Signs List 1, 1A-1D atomization container 2, 2A-2D raw material solution 3, 3A-3D mist generation part 4 Heater 5 Heat sink 6, 6A-6D Liquid level sensor 7, 7A-7D Cooling mechanism 9 Spherical semiconductor element with lead wire 10 Manufacturing heater mechanism 11, 12 Coated lead wire 11m, 12m Lead wire conductive part 19 Optical device device 20 to 24 Thin film 25 Cover 26 Thin film laminated structure 50, 50A to 50D Thin film manufacturing device R11, R12 Conductive exposed part

Claims (8)

A first coated lead wire having one end and the other end, the periphery of the first conductive portion being coated with a first insulator;
A second coated lead wire having one end and the other end, the periphery of the second conductive portion being coated with a second insulator, and the other end of the first coated lead wire being a first coated lead wire. A conductive portion having a first conductive exposed portion exposed, the other end of the second coated lead wire having a second conductive exposed portion having a second conductive portion exposed,
An optical device structure formed electrically connected to the first conductive exposed portion of the first covered lead wire;
The optical device structure,
A first element forming layer formed by being connected to the first conductive exposed portion of the first covered lead wire;
A second element formation layer formed so as to cover an outer periphery of the first element formation layer except for a portion in contact with the first covered lead wire ;
A third element formation layer formed to cover an outer periphery of the second element formation layer except for a portion in contact with the first covered lead wire ;
A transparent conductive film formed so as to cover an outer periphery of the third element formation layer except for a portion in contact with the first covered lead wire , and connected to the second conductive exposed portion;
The first to third element forming layer has at least one optical processing function of the photoelectric conversion function and electro-optic conversion functions,
Optical device equipment. The optical device according to claim 1,
Insulating and transparent, further comprising an insulating covering portion formed over the entire circumference of the optical device structure,
Optical device equipment. The optical device according to claim 1 or 2, wherein:
The second conductive exposed portion of the second covered lead wire is embedded in the transparent conductive film;
Optical device equipment. The optical device according to any one of claims 1 to 3, wherein
The first element formation layer is formed in a substantially spherical shape around the first conductive exposed portion of the first covered lead wire,
The second element forming layer is formed to reflect the outer shape of the first element forming layer, the third element forming layer is formed to reflect the outer shape of the second element forming layer, and The conductive film is formed by reflecting the outer shape of the third element formation layer,
The optical device structure is formed in a substantially spherical shape around the first conductive exposed portion of the first covered lead wire,
Optical device equipment. The optical device according to claim 2,
The insulating coating portion is formed by reflecting the outer shape of the optical device structure,
The combination structure of the optical device structure and the insulating coating portion is formed in a substantially spherical shape around a first conductive exposed portion of the first coated lead wire,
Optical device equipment. The optical device according to claim 2 or 5, wherein
The insulating coating portion is characterized in that any one of an epoxy resin, a silicone resin, and glass as a constituent material,
Optical device equipment. The optical device according to any one of claims 1 to 6, wherein
The first element formation layer is a semiconductor layer of one of P-type and N-type conductivity,
The second element formation layer is an I-type semiconductor layer;
The third element formation layer is a semiconductor layer of the other conductivity type of P-type and N-type;
Optical device equipment. The optical device according to any one of claims 1 to 6, wherein
The first element formation layer is a transport layer for transporting one of holes and electrons,
The second element formation layer is a photoelectric conversion layer or an electro-optical conversion layer,
The third element formation layer is a transport layer of the other carrier among holes and electrons,
Optical device equipment.

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