JP2018107241A - Optical device device - Google Patents

Abstract

An optical device device having a read function, which can be manufactured relatively easily. A thin film laminated structure includes a thin film formed by connecting to a conductive exposed portion of a covered lead wire, a thin film formed covering the entire circumference of the thin film, and the entire thin film. The thin film 23 is formed so as to cover the periphery, and the thin film 24 is formed so as to cover the entire periphery of the thin film 23 and to be embedded in the conductive exposed portion R12 of the coated lead wire 12. . Further, a cover 25 is formed so as to cover the entire circumference of the thin film laminated structure 26. The covered lead wires 11 and 12, the thin film laminated structure 26, and the cover 25 constitute an optical device device 19 having a lead function. [Selection] Figure 4

Description

  The present invention relates to an optical device device having an optical processing function such as a solar cell and a light emitting element.

  FIG. 5 is a sectional view showing a sectional structure of a conventional LED chip 30. As shown in the figure, a P-type semiconductor layer 32 is provided on a substrate 31, an I-type semiconductor layer 33 is provided on the P-type semiconductor layer 32, and an N-type semiconductor layer 34 is provided on the I-type semiconductor layer 33. The electrode 35 is provided on a part of the surface of the N-type semiconductor layer 34. As described above, the conventional LED chip 30 includes the substrate 31, the P-type semiconductor layer 32, the I-type semiconductor layer 33, the thin film 24, and the electrode 35, and has a bullet-type LED structure.

  FIG. 6 is an explanatory diagram schematically showing a configuration of an optical device device 39 having a read function in which the LED chip 30 shown in FIG. 5 has a read function.

  As shown in the figure, the lead frame 41A is electrically connected to the electrode 35 of the LED chip 30 via the gold wire 43, and the LED chip 30 is disposed on the die pad 41BD of the lead frame 41B via the conductive paste 42. The P-type semiconductor layer 32 of the LED chip 30 and the die pad 41BD are electrically connected. If the substrate 31 has conductivity, the P-type semiconductor layer 32 of the LED chip 30 and the die pad 41BD may be electrically connected via the substrate 31.

  Then, the upper part of the lead frames 41A and 41B including the die pad 41BD and the entire LED chip 30 is covered with the sealing resin 44 to complete the optical device device 39. A structure similar to such an optical device device 39 is disclosed, for example, as a light-emitting element of Patent Document 1.

JP 2003-69081 A

  However, in order to complete the optical device device 39 shown in FIG. 6 from the LED chip 30 shown in FIG. 5, a bonding process using the gold wire 43 between the lead frame 41 </ b> A and the LED chip 30, a die pad using the conductive paste 42. The mounting process of the LED chip 30 on 41BD and the resin sealing process with the sealing resin 44 are required.

  As described above, when the optical device device 39 having the read function is obtained while incorporating the conventional optical semiconductor element such as the LED chip 30, a plurality of other processes are performed even after the completion of the LED chip 30 that is the optical semiconductor element. Is required, and it is difficult to reduce the manufacturing cost.

  The present invention has been made to solve the above-described problems, and an object thereof is to obtain an optical device device having a read function that can be manufactured relatively easily.

  According to a first aspect of the present invention, there is provided an optical device apparatus according to the first aspect, wherein the first covered lead wire has one end and the other end, and the first conductive portion is covered with the first insulator, and the one end. And a second covered lead wire having the other end and the periphery of the second conductive portion covered with a second insulator, and the other end of the first covered lead wire is the first conductive portion And the other end of the second covered lead has a second conductive exposed portion from which the second conductive portion is exposed, and the first covered lead. An optical device structure formed in electrical connection with the first conductive exposed portion of a wire, the optical device structure being formed on the first conductive exposed portion of the first coated lead wire A first element formation layer formed by coupling, a second element formation layer formed to cover the entire circumference of the first element formation layer, A third element forming layer formed to cover the entire circumference of the second element forming layer, and to cover the entire circumference of the third element forming layer, and to the second conductive exposed portion The first to third element formation layers include at least one light processing function among the photoelectric conversion function and the electro-optical conversion function by the combination thereof.

  The optical device apparatus according to the first aspect of the present invention of the present invention has a relatively simple configuration of an optical device structure and first and second coated lead wires.

  Therefore, the first to third element forming layers and the transparent conductive film are sequentially formed starting from the first conductive exposed portion of the first coated lead, and the last transparent conductive film is formed as the second coated lead. The basic structure of the optical device device can be realized by a relatively simple manufacturing method in which the two conductive exposed portions are connected.

It is explanatory drawing which shows the structure of the thin film manufacturing apparatus which is Embodiment 1 of this invention. It is explanatory drawing which shows the structure of the thin film manufacturing system for performing the thin film manufacturing method which is Embodiment 2 of this invention. It is explanatory drawing which shows the detailed structure of the spherical semiconductor element with a lead wire obtained with the thin film manufacturing method of Embodiment 2. FIG. It is explanatory drawing which shows the detailed structure of the optical device apparatus which is Embodiment 3 of this invention. It is sectional drawing which shows the cross-section of the conventional LED chip. It is explanatory drawing which shows typically the structure of the conventional optical device apparatus 39 which gave the read function to the LED chip shown in FIG.

<Embodiment 1>
FIG. 1 is an explanatory view showing the configuration of a thin film manufacturing apparatus 50 according to Embodiment 1 of the present invention. As shown in the figure, the thin film manufacturing apparatus 50 includes an atomizing apparatus including an atomizing container 1 and a mist generating unit 3, and a manufacturing heater mechanism 10 serving as a lead wire holding unit.

  The atomization container 1 contains a raw material solution 2 therein. One or a plurality of mist generating sections 3 are provided below the bottom surface, which is the outside of the atomizing container 1, and the raw material solution stored in the atomizing container 1 is atomized to obtain a droplet-shaped raw material mist. Specifically, the mist generating unit 3 is an ultrasonic vibrator that generates ultrasonic waves, and is accommodated in the atomization container 1 by applying ultrasonic waves to the atomization container 1 using the ultrasonic vibrator. The raw material solution 2 is atomized into droplets, and raw material mist is generated in the atomization container 1.

  A manufacturing heater mechanism 10 which is a lead wire holding unit is detachably installed on an upper portion of the atomization container 1 and includes a heater 4 and a heat sink 5. The heater 4 has a heating function, and the heat sink 5 is made of, for example, aluminum, and is connected to the heater 4. One end of the covered lead wire 11 is attached to the bottom surface, and the heat from the heater 4 is covered with the lead. It functions as a heat conducting part that conducts to the wire 11.

  The covered lead wire 11 has a lead wire conductive portion 11m made of, for example, a copper wire, and the lead wire conductive portion 11m is covered with a wire cover portion 11c made of a heat resistant insulator such as alumina. In the covered lead wire 11 having such a structure, one end on the upper side in the figure is fixed to the heat sink 5, and a part of the lead wire conductive portion 11m is exposed at the other end on the lower side in the figure. At this time, the other end of the coated lead wire 11 is disposed in the atomization container 1 without being immersed in the raw material solution 2.

  That is, the heat sink 5 serving as a heat conducting unit holds the coated lead wire 11 so that the other end of the coated lead wire 11 is at the lowest position in a state where the coated lead wire 11 is suspended in the vertical direction.

  The thin film manufacturing apparatus 50 having such a configuration generates heat from the heater 4 while the covered lead wire 11 is held by the manufacturing heater mechanism 10 which is a lead wire holding unit, and atomizes by the mist generating unit 3. A thin film forming process for generating raw material mist in the container 1 can be performed.

  The thin film manufacturing apparatus 50 according to the first embodiment executes the thin film forming process to generate the raw material mist in the atomization container 1 while heating the lead wire conductive portion 11m at the other end of the coated lead wire 11. Thus, the substantially spherical thin film 20 can be formed around the lead wire conductive portion 11m at the other end of the covered lead wire 11.

  The thin film 20 is spherical because the atomization container 1 is filled with the raw material mist of the raw material solution 2, so that the entire coated lead wire 11 gets wet and droplets accumulate on the other end of the coated lead wire 11 by its own weight. . At this time, since the coated lead wire 11 is heated by the heater 4, the solvent of the raw material mist evaporates and solidifies. Accordingly, by heating the coated lead wire 11 at a temperature at which the solvent of the raw material mist does not instantly evaporate, the substantially spherical thin film 20 centering on the exposed lead wire conductive portion 11m at the other end of the coated lead wire 11 is obtained. Can be formed.

  As a result, the thin film manufacturing apparatus 50 according to the first embodiment adds only the manufacturing heater mechanism 10 and the coated lead wire 11 which are lead wire holding parts, in addition to the atomizing apparatus (the atomizing container 1 + the mist generating part 3). With a relatively simple apparatus configuration, the substantially spherical thin film 20 can be formed at a relatively low cost.

  In addition, the atomizing device in the thin film manufacturing apparatus 50 has a relatively simple configuration in which the mist generating unit 3 is installed below the bottom surface of the atomizing container 1 and can be realized at low cost.

  Moreover, since the thin film manufacturing apparatus 50 of Embodiment 1 forms the thin film 20 in the atomization container 1, it is not necessary to provide the film-forming process chamber for thin film formation in the exterior of the atomization container 1. FIG. For this reason, since the carrier gas for transporting the raw material mist to the film forming chamber is not required, the apparatus configuration can be further simplified.

  In addition, since the film formation chamber outside the atomization container 1 is not required, a mist injection mechanism such as a nozzle for injecting the raw material mist used in the film formation chamber is inevitably unnecessary. The maintenance cycle of the thin film manufacturing apparatus 50 can be set relatively long without clogging.

  Furthermore, since a substrate serving as a base for forming the thin film 24 is not required, the substantially spherical thin film 24 can be formed at a lower cost.

  Further, the vacuum process such as MOCVD has a high manufacturing cost, and the liquid phase method such as the impregnation method has a disadvantage that the film formation at high temperature is difficult and the film quality is poor. By using the raw material mist obtained by misting the raw material solution 2 for the film formation, the above disadvantages can be overcome and the high-quality thin film 20 can be formed relatively inexpensively.

  Further, the heat sink 5 holds the coated lead wire 11 so that the other end of the coated lead wire 11 is at the lowest position in a state where the coated lead wire 11 is suspended in the vertical direction.

  For this reason, the thin film manufacturing apparatus 50 of Embodiment 1 arrange | positions the other end of the covering lead wire 11 in the position nearest from the liquid level of the raw material solution 2, and is the lowest part of the covering lead wire 11 by the said thin film formation process. A substantially spherical thin film 20 centering on the lead wire conductive portion 11m can be efficiently formed at the tip portion.

  Further, the atomizing container 1 is provided with a cooling mechanism 7 in a lower region where the raw material solution 2 is accommodated. As the cooling mechanism 7, for example, a mode in which a flow path is provided on the side surface of the atomization container 1 and cooling water is allowed to flow through the flow path can be considered.

  The thin film manufacturing apparatus 50 according to the first embodiment can effectively cool the raw material solution 2 by providing the cooling mechanism 7 in the atomization vessel 1, and the raw material solution 2 evaporates when the thin film forming process is performed. The phenomenon can be prevented.

  Furthermore, the atomization container 1 has a liquid level sensor 6 that detects the liquid level of the raw material solution 2. Therefore, by monitoring the liquid level height of the raw material solution 2 with the liquid level sensor 6, the raw material mist generating capacity of the mist generating unit 3 and the raw material solution (not shown) so that the liquid surface height of the raw material solution 2 becomes constant. It is possible to control the supply capacity of the supply mechanism 2 and the like so that the raw material solution 2 does not disappear while keeping the amount of the raw material mist in the atomization container 1 constant.

  Moreover, since the raw material mist can be uniformly generated in the atomization container 1 by using an ultrasonic vibrator that generates ultrasonic waves as the mist generating unit 3, the thin film 20 can be formed with high film thickness accuracy. Can do.

<Embodiment 2>
FIG. 2 is an explanatory diagram showing a configuration of a thin film manufacturing system for executing the thin film manufacturing method according to the second embodiment of the present invention. Specifically, the thin film manufacturing system is configured by four thin film manufacturing apparatuses 50A to 50D each having a configuration equivalent to the thin film manufacturing apparatus 50 shown in FIG. 1, and the thin film manufacturing method of the second embodiment is executed. doing.

  The atomization container 1A of the thin film manufacturing apparatus 50A contains the raw material solution 2A therein. In the case of the basic mode, the raw material solution 2A is a mixed solution of “copper acetylacetonate + methanol + water”.

  The atomization container 1B of the thin film manufacturing apparatus 50B contains the raw material solution 2B inside. In the case of the basic mode, the raw material solution 2B is a mixed solution of “copper acetylacetonate + zinc acetylacetonate + methanol + water”.

  The atomizing container 1C of the thin film manufacturing apparatus 50C contains the raw material solution 2C therein. In the case of the basic mode, the raw material solution 2C is a mixed solution of “zinc acetylacetonate + methanol + water”.

  The atomization container 1D of the thin film manufacturing apparatus 50D contains the raw material solution 2D inside. In the case of the basic mode, the raw material solution 2D is a mixed solution of “zinc acetylacetonate + gallium acetylacetonate + methanol + water”.

  Thus, corresponding to the thin film manufacturing apparatuses 50A to 50D (a plurality of thin film manufacturing apparatuses), different atomizing containers 1A to 1D (a plurality of atomizing containers) serve as constituent parts and correspond to the thin film manufacturing apparatuses 50A to 50D. Then, a plurality of different raw material solutions 2A to 2D are accommodated in the atomization containers 1A to 1D.

  In addition, similarly to the atomization container 1 of Embodiment 1 having the liquid level sensor 6 and the cooling mechanism 7, the atomization containers 1A to 1D have the liquid level sensors 6A to 6D and the cooling mechanisms 7A to 7D, respectively. ing.

  A mist generating part 3A (one or more) is provided at the lower bottom of the atomizing container 1A, and a mist generating part 3B is provided at the lower bottom of the atomizing container 1B. Is provided with a mist generating part 3C, and a mist generating part 3D is provided below the atomization container 1D.

  As described above, at least one mist generating unit 3A to 3D (a plurality of mist generating units) independent from each other is provided corresponding to the thin film manufacturing apparatuses 50A to 50D.

  On the other hand, the manufacturing heater mechanism 10 which is a lead wire holding unit has the same configuration as the manufacturing heater mechanism 10 shown in FIG. 1, and one unit of the manufacturing heater mechanism 10 is shared between the thin film manufacturing apparatuses 50A to 50D. The atomizing containers 1A to 1D are detachable.

  Hereinafter, the thin film manufacturing method of Embodiment 2 performed using the thin film manufacturing system (thin film manufacturing apparatuses 50A to 50D) shown in FIG. 2 will be described.

  In the thin film manufacturing method of the second embodiment, the thin film forming process is performed between the thin film manufacturing apparatuses 50A to 50D in accordance with the setting execution order (predetermined order) performed by 50A, 50B, 50C, and 50D.

  First, as shown in FIG. 2A, the first thin film forming process is performed in a state where the manufacturing heater mechanism 10 is installed on the upper portion of the atomization vessel 1.

  Then, the substantially spherical thin film 21 can be formed with the lead wire conductive portion 11m at the other end of the covered lead wire 11 as the center. At this time, the thin film 21 formed from the raw material mist of the basic form of the raw material solution 2A becomes a copper oxide film (CuO) and functions as a P-type semiconductor layer (one conductivity type semiconductor layer).

  And the heater mechanism 10 for manufacture is removed from 1 A of atomization containers in the state in which the one end of the covering lead wire 11 in which the thin film 21 was formed in the other end was attached to the heat sink 5. FIG.

  Next, as shown in FIG. 2 (b), with the one end of the coated lead wire 11 having the thin film 21 formed on the other end fixed to the heat sink 5, the manufacturing heater mechanism 10 is moved to the atomizing container 1B. Attach to the top. In this state, the second thin film forming process is executed.

  Then, by forming the thin film 22 around the thin film 21 reflecting the outer shape of the thin film 21, the laminated structure of the substantially spherical thin films 21 and 22 with the lead wire conductive portion 11m at the other end of the coated lead wire 11 as the center. Can be obtained. At this time, the thin film 22 formed from the raw material mist of the basic form of the raw material solution 2B becomes a copper zinc oxide film (ZnCuO) and functions as an I-type semiconductor layer.

  Then, the manufacturing heater mechanism 10 is removed from the atomization container 1B with one end of the covered lead wire 11 having the laminated structure of the thin films 21 and 22 formed on the other end fixed to the heat sink 5.

  Next, as shown in FIG. 2 (c), the manufacturing heater mechanism 10 is moved in a state where one end of the covered lead wire 11 having the laminated structure of the thin films 21 and 22 formed on the other end is fixed to the heat sink 5. It attaches to the upper part of the atomization container 1C. In this state, the third thin film forming process is executed.

  Then, by reflecting the outer shape of the thin film 22 and forming the thin film 23 around the thin film 22, the laminated structure of the substantially spherical thin films 21 to 23 around the lead wire conductive portion 11 m at the other end of the coated lead wire 11. Can be obtained. At this time, the thin film 23 formed from the raw material mist of the basic form of the raw material solution 2C becomes a zinc oxide film (ZnO) and functions as an N-type semiconductor layer (the other conductive type semiconductor layer).

  And the heater mechanism 10 for manufacture is removed from 1 C of atomization containers in the state which the one end of the covering lead wire 11 in which the laminated structure of the thin films 21-23 was formed in the other end was fixed to the heat sink 5. FIG.

  Thereafter, one end of the covered lead wire 12 (second covered lead wire) from which the lead wire conductive portion 12 m at the other end is exposed is attached to the bottom surface of the heat sink 5 so as to be adjacent to the covered lead wire 11. A pre-preparation process is performed in which the other end of the covered lead wire 12 is positioned close to the thin film 23 formed on the other end of the wire. The covered lead wire 12 has a lead wire conductive portion 12m made of, for example, copper wire, like the covered lead wire 11, and the lead wire conductive portion 12m has a lead wire covered portion made of a heat resistant insulator such as alumina. 12c.

  Next, as shown in FIG. 2 (d), the one end of the covered lead wire 11 and the one end of the covered lead wire 12 in which the laminated structure of the thin films 21 to 23 is formed on the other end are fixed to the heat sink 5. Then, the heater mechanism 10 for manufacture is mounted on the upper part of the atomization container 1D. In this state, the fourth thin film forming process is executed.

  Then, by forming the thin film 24 around the thin film 23 reflecting the outer shape of the thin film 23, a laminated structure of the substantially spherical thin films 21 to 24 around the lead wire conductive portion 11 m at the other end of the covered lead wire 11. A thin film laminated structure 26 can be obtained. At this time, the thin film 24 formed from the raw material mist of the basic form of the raw material solution 2D becomes a GZO film and functions as a transparent conductive film. As a result, the thin film laminated structure 26 including the thin films 21 to 24 can be obtained.

  Further, the thin film 24 is formed to be connected to the lead wire conductive portion 12 m of the covered lead wire 12 disposed in proximity to the thin film 23.

  FIG. 3 is an explanatory view showing a detailed structure of the spherical semiconductor element 9 with a lead wire obtained by the thin film manufacturing method of the second embodiment. As shown in the figure, by the thin film manufacturing method of the second embodiment, the thin film 21 to 24 forms a substantially spherical thin film laminated structure 26, and the lead wire conductive portion 11 m of the coated lead wire 11 is electrically connected to the thin film 21. The lead wire conductive portion 12m of the coated lead wire 12 is electrically connected to the thin film 24. Therefore, the spherical semiconductor element 9 with a lead wire composed of the thin film laminated structure 26, the covered lead wire 11 and the covered lead wire 12 can be finally obtained.

  Thus, in the thin film manufacturing method of the second embodiment, the manufacturing heater mechanism 10 is installed in each of the thin film manufacturing apparatuses 50A to 50D constituting the thin film manufacturing system, and the manufacturing heater mechanism 10 is installed. The thin film forming process is executed once each.

  In the thin film manufacturing method according to the second embodiment, the thin film forming process is performed once in the setting execution order (predetermined order) between the thin film manufacturing apparatuses 50A to 50D, so that the other end of the coated lead wire 11 is processed. A spherical semiconductor element 9 with a lead wire having a thin film laminated structure 26 in which thin films 21 to 24 (a plurality of thin films) are laminated with the lead wire conductive portion 11m as a center can be obtained.

  As described above, the thin film manufacturing method according to the second embodiment is not limited to the atomizing device (the atomizing containers 1A to 1D + the mist generating units 3A to 3D), but one unit of the heater mechanism 10, the coated lead wire 11 and the coated lead. With the system configuration in which only the wire 12 is added, the spherical semiconductor element 9 with a lead wire having the substantially spherical thin film laminated structure 26 can be manufactured relatively inexpensively.

  Moreover, thin film manufacturing apparatus 50D which performs the last said thin film formation process along a setting execution order among thin film manufacturing apparatuses 50A-50D becomes a final thin film manufacturing apparatus. Since the final raw material solution, which is the raw material solution 2D for the thin film manufacturing apparatus 50D, is a mixed solution of “zinc acetylacetonate + gallium acetylacetonate + methanol + water” as described above, A GZO film can be obtained.

  As described above, in the thin film manufacturing method of the second embodiment, the thin film 24 that is the outermost film of the thin film multilayer structure 26 is formed as a transparent conductive film, thereby transmitting light into the thin film multilayer structure 26. In addition, it is possible to maintain a good electrical connection relationship with the lead wire conductive portion 12m of the coated lead wire 12.

  Furthermore, in the thin film manufacturing method of the second embodiment, the above-described pre-preparation process is executed prior to the final thin film formation process performed for the fourth time.

  As described above, the thin film manufacturing method according to the second embodiment performs the final thin film forming process by the thin film manufacturing apparatus 50D, which is the final thin film manufacturing apparatus, after the preliminary preparation process. The covered lead wire 12 can be used as a lead wire of the spherical semiconductor element 9 with lead wire by connecting the lead wire conductive portion 12m at the other end of the lead wire 12 (second covered lead).

  Moreover, the semiconductor element which has the optical processing function of PIN structure as the spherical semiconductor element 9 with a lead wire can be obtained by using the mixed solution of a basic aspect as raw material solution 2A-2D. In addition, as a light processing function, the light emission function etc. which replace the electric current of a solar cell, the electric current of LED with light, etc. can be considered.

  Further, even if the raw material solution 2A and the raw material solution 2C in the basic mode are reversed and the thin film 21 and the thin film 23 are replaced to form the thin film laminated structure 26, the optical processing function of the PIN structure (NIP structure) is similarly obtained. Can be obtained.

(Other aspects of raw material solutions 2A to 2D)
In the thin film manufacturing method of Embodiment 2 described above, in addition to the basic aspects of the raw material solutions 2A to 2D, mixed solutions of other aspects shown below can be considered.

  The raw material solution 2A is a mixed solution of “copper thiocyanate + methanol + water”. The raw material solution 2B is a mixed solution of “lead iodide + methyl ammonium iodide + methanol + water”. The raw material solution 2C is a mixed solution of “titanium acetylacetonate + methanol + water”. The raw material solution 2D is a mixed solution of “tin chloride + ammonium fluoride + water”.

  When the thin film manufacturing method of the second embodiment is executed in another aspect of the raw material solutions 2A to 2D, a thin film laminated structure 26 having the following structure can be obtained.

The thin film 21 formed from the raw material mist of the raw material solution 2A becomes a CuSCN film and functions as a hole transport layer. The thin film 22 formed from the raw material mist of the raw material solution 2B becomes a CH ₃ NH ₃ PbI ₃ film and functions as a photoelectric conversion layer or an electro-optical conversion layer. The thin film 23 formed from the raw material mist of the raw material solution 2C becomes a TiO ₂ film and functions as an electron transport layer. The thin film 24 formed from the raw material mist of the raw material solution 2D becomes an FTO film and functions as a transparent conductive film.

  Thus, by using the mixed solution of the other embodiment described above as the raw material solutions 2A to 2D, the lead wire spherical semiconductor element 9 can be used as a hole transport layer, a photoelectric conversion layer (electro-optic conversion layer), and an electron transport layer. A semiconductor element having an optical processing function having a structure as described above can be obtained. In addition, as a light processing function, the light emission function etc. which replace the electric current of a solar cell, the electric current of LED with light, etc. can be considered.

  Moreover, even if the raw material solution 2A and the raw material solution 2C are reversed and the thin film 21 and the thin film 23 are replaced to form the thin film laminated structure 26, similarly, an electron transport layer, a photoelectric conversion layer (electro-optic conversion layer) And an optical device element having a structure comprising a hole transport layer.

  Moreover, if the thin film laminated structure 26 (thin films 21 to 24) is a constituent material having a light processing function, the raw material solutions 2A to 2D can be used in addition to the basic aspect and other aspects described above.

<Embodiment 3>
FIG. 4 is an explanatory view showing the detailed structure of the optical device device 19 according to the third embodiment of the present invention. As shown in the figure, the optical device device 19 includes all the structures of the spherical semiconductor elements 9 with lead wires finally obtained by the thin film manufacturing method of the second embodiment, and further covers and covers the entire thin film 24. 25 is formed.

  Therefore, the spherical semiconductor element 9 with lead wires in the previous stage of forming the cover 25 can be manufactured by the thin film manufacturing method of the second embodiment.

  The optical device device 19 according to the third embodiment takes out the spherical semiconductor element 9 with lead wire from the atomization container 1D after completion of the spherical semiconductor element 9 with lead wire shown in FIG. Then, one end of the covered lead wire 12 is removed from the heat sink 5 and only the spherical semiconductor element 9 with lead wire is taken out.

  And the optical device apparatus 19 can be obtained by forming the cover 25 which is an insulation coating part, for example using a metal mold | die, covering the perimeter of the thin film 24 of the spherical semiconductor element 9 with a lead wire. In addition, the cover 25 which is an insulation coating part has insulation and transparency, and uses the material which is excellent in photosensitivity as a constituent material.

  Hereinafter, the optical device device 19 of Embodiment 3 will be described in detail. The optical device device 19 includes a covered lead wire 11, a covered lead wire 12, a thin film laminated structure 26, and a cover 25.

  The covered lead wire 11 (first covered lead wire) has one end and the other end, and the lead wire conductive portion 11m (first conductive portion) is covered with the lead wire covered portion 11c (first insulator). Has been.

  The covered lead wire 12 (second covered lead wire) has one end and the other end, and the lead wire conductive portion 12m (second conductive portion) is surrounded by a lead wire covered portion 12c (second insulator). It is covered with. In FIG. 4, the upper end of the coated lead wires 11 and 12 is one end, and the lower end is the other end.

  The other end of the covered lead wire 11 has a conductive exposed portion R11 (first conductive exposed portion) in which a part of the lead wire conductive portion 11m is exposed, and the other end of the covered lead wire 12 is the lead wire conductive portion. It has a conductive exposed portion R12 (second conductive exposed portion) in which a part of 12m is exposed.

  And the thin film laminated structure 26 is formed as an optical device structure in electrical connection with the conductive exposed portion R11 of the coated lead wire 11.

  The thin film laminated structure 26 which is an optical device structure is formed to cover the thin film 21 (first element forming layer) formed by being connected to the conductive exposed portion R11 of the covered lead wire 11 and the entire circumference of the thin film 21. A thin film 22 (second element formation layer) to be formed, a thin film 23 (third element formation layer) formed so as to cover the entire circumference of the thin film 22, and an entire periphery of the thin film 23, and It has a thin film 24 (transparent conductive film) formed so as to embed the conductive exposed portion R12 of the coated lead wire 12 therein.

  The thin films 21 to 23 (first to third element formation layers) have at least one light processing function among the photoelectric conversion function and the electro-optical conversion function depending on the combination.

  For example, in the thin film manufacturing system (thin film manufacturing apparatuses 50A to 50D) that performs the thin film manufacturing method of the second embodiment, when the basic mode is adopted as the raw material solutions 2A to 2D, a PIN structure is formed by the thin films 21 to 23. Accordingly, at least one of the photoelectric conversion function and the electro-optical conversion function can be provided.

  Moreover, in the thin film manufacturing system (thin film manufacturing apparatus 50A-50D) which implements the thin film manufacturing method of Embodiment 2, when employ | adopting another aspect as raw material solution 2A-2D, a positive hole transport layer, a photoelectric converting layer (lightning) By forming a structure comprising a conversion layer) and an electron transport layer, at least one light processing function can be provided among the photoelectric conversion function and the electro-optical conversion function.

  Therefore, the optical device device 19 according to the third embodiment includes the spherical semiconductor element 9 with a lead wire having a lead function with a relatively simple configuration of the thin film laminated structure 26 and the coated lead wires 11 and 12 which are optical device structures. Realized.

  In this way, the thin films 21 to 23 (first to third element forming layers) and the thin film 24 (transparent conductive film) are sequentially formed starting from the conductive exposed portion R11 (first conductive exposed portion) of the coated lead wire 11. Then, the outermost thin film 24 is connected to the conductive exposed portion R12 (second conductive exposed portion) of the coated lead wire 12, and a spherical shape with a lead wire, which is a basic structure in the optical device device 19, by a relatively simple manufacturing method. The semiconductor element 9 can be obtained. The method for manufacturing the spherical semiconductor element 9 with lead wires is described in detail as the thin film manufacturing method of the second embodiment.

  As described above, the optical device device 19 according to the third embodiment can obtain the spherical semiconductor element 9 with a lead wire having a lead function by a relatively simple manufacturing method.

  Furthermore, the optical device device 19 further includes a cover 25 (insulation coating portion) that has insulation and transparency and is formed so as to cover the entire circumference of the thin film laminated structure 26.

  Therefore, the optical device device 19 can protect the thin film laminated structure 26 from the outside without impairing the optical processing function of the thin film laminated structure 26 that is the optical device structure. Further, as described above, the process of forming the cover 25 is a process of covering the entire circumference of the thin film laminated structure 26 using, for example, a mold, so the optical device device 19 of the third embodiment is compared. Can be manufactured easily.

  Further, when compared with the conventional optical device device 39 shown in FIG. 5 and FIG. 6, the conductive paste 42 and the gold wire 43 which are auxiliary members are not required, and thus the optical device device 19 is manufactured at a relatively low cost. Can do.

  In addition, since the optical device device 19 of the third embodiment can replace the lead frames 41A and 41B as the components that realize the lead function as compared with the conventional optical device device 39, the covered lead wires 11 and 12 can be replaced. Therefore, the optical device device 19 can be manufactured at a relatively low cost.

  Further, since the conductive exposed portion R12 of the coated lead wire 12 is embedded in the thin film 24 (transparent conductive film), the coated lead wire 12 is externally connected to the thin film laminated structure 26, which is an optical device structure, for electric signal propagation. It can be used as a lead wire with good stability.

  Furthermore, the thin film laminated structure 26 which is an optical device structure has the following shape characteristics.

  The thin film 21 (first element formation layer) is formed in a substantially spherical shape with the conductive exposed portion R11 of the lead wire conductive portion 11m at the other end of the covered lead wire 11 as the center.

  The thin film 22 (second element forming layer) is formed reflecting the outer shape of the thin film 21, and the thin film 23 (third element forming layer) is formed reflecting the outer shape of the thin film 22, and the thin film 24 (transparent conductive film). ) Is formed to reflect the shape of the thin film 23, so that the thin film laminated structure 26 is formed in a substantially spherical shape with the conductive exposed portion R11 of the lead wire conductive portion 11m at the other end of the covered lead wire 11 as the center. It is characterized by that.

  Thus, by forming the thin film laminated structure 26 in the optical device device 19 of Embodiment 3 in a substantially spherical shape, it is possible to improve the characteristics of the light processing function such as light absorption or light emission efficiency.

  Further, the cover 25 (insulation coating portion) is formed to reflect the outer shape of the thin film laminated structure 26, so that the combined structure of the thin film laminated structure 26 and the cover 25 has the conductive exposed portion R 11 of the covered lead wire 11. It is characterized by being formed in a substantially spherical shape as the center.

  As described above, the optical device device 19 according to the third embodiment has an optical processing function by forming the combined structure of the thin film laminated structure 26 that is an optical device structure and the cover 25 that is an insulating coating portion into a substantially spherical shape. The thin film laminated structure 26 can be protected from the outside without impairing the characteristics.

  Furthermore, the cover 25 which is an insulation coating portion uses any one of epoxy resin, silicone resin and glass as a constituent material.

  For this reason, the optical device apparatus 19 of Embodiment 3 can obtain the cover 25 excellent in transparency, strength, and light resistance.

  Furthermore, by using the mixed solution of the basic aspect as the raw material solutions 2A to 2D, the thin film 21 (first element formation layer) becomes a P-type semiconductor layer (one conductivity type semiconductor layer), and the thin film 22 (second conductive layer). The element formation layer) is an I-type semiconductor layer, and the thin film 23 (third element formation layer) is an N-type semiconductor layer (the other conductivity type semiconductor layer), and a PIN structure is realized in the thin film stacked structure 26. Can do.

  Therefore, the optical device 19 of the third embodiment employs the basic mode of the raw material solutions 2A to 2D, so that the optical semiconductor having a light processing function such as a solar cell or an LED by the PIN structure in the thin film laminated structure 26. An element can be obtained.

  The raw material solution 2A and the raw material solution 2C are reversed, and the thin film 21 and the thin film 23 are replaced to form a thin film laminated structure 26 in which the thin film 21 is an N-type semiconductor layer and the thin film 23 is a P-type semiconductor layer. A PIN structure (NIP structure) may be realized.

  Further, by adopting the basic mode as the raw material solutions 2A to 2D and realizing the PIN structure with the oxide, there is also an advantage that the PIN structure becomes relatively easy to manufacture.

  Further, by employing a mixed solution of another aspect as the raw material solutions 2A to 2D, the thin film 21 (first element formation layer) becomes a hole transport layer (one carrier transport layer), and the thin film 22 (second carrier layer). The element formation layer is a photoelectric conversion layer or an electro-optic conversion layer, and the thin film 23 (third element formation layer) is an electron transport layer (the other carrier transport layer). A structure composed of a conversion layer (electro-optic conversion layer) and an electron transport layer can be realized.

  Therefore, the optical device device 19 of the third embodiment employs another aspect of the raw material solutions 2A to 2D, so that the hole transport layer, the photoelectric conversion layer (electro-optic conversion layer), and the electrons in the thin film stacked structure 26 are used. An optical semiconductor element having a light processing function, such as a solar cell or an LED, can be obtained by the structure composed of the transport layer.

  In addition, by reversing the raw material solution 2A and the raw material solution 2C, the thin film 21 and the thin film 23 are replaced to form a thin film laminated structure 26 in which the thin film 21 is an electron transport layer and the thin film 23 is a hole transport layer. Also good.

  Further, by adopting another embodiment of the raw material solutions 2A to 2D and using a mixed solution of “lead iodide + methylammonium iodide + methanol + water” as the raw material solution 2B, the photoelectric conversion layer (electric conversion layer) and The resulting thin film 22 can be obtained with a perovskite structure.

<Others>
It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

DESCRIPTION OF SYMBOLS 1,1A-1D Atomization container 2,2A-2D Raw material solution 3,3A-3D Mist generating part 4 Heater 5 Heat sink 6, 6A-6D Liquid level sensor 7, 7A-7D Cooling mechanism 9 Spherical semiconductor element with lead wire 10 Manufacturing heater mechanism 11, 12 Covered lead wire 11m, 12m Lead wire conductive portion 19 Optical device device 20-24 Thin film 25 Cover 26 Thin film laminated structure 50, 50A-50D Thin film manufacturing device R11, R12 Conductive exposed portion

Claims (8)

A first coated lead wire having one end and the other end, the first conductive portion being covered with a first insulator;
A second covered lead wire having one end and the other end, and surrounding the second conductive portion with a second insulator, wherein the other end of the first covered lead wire is the first end A first conductive exposed portion where the conductive portion is exposed, and the other end of the second covered lead has a second conductive exposed portion where the second conductive portion is exposed;
An optical device structure formed by being electrically connected to the first conductive exposed portion of the first coated lead;
The optical device structure is:
A first element formation layer formed to be connected to the first conductive exposed portion of the first covered lead;
A second element formation layer formed over the entire circumference of the first element formation layer;
A third element formation layer formed over the entire circumference of the second element formation layer;
A transparent conductive film formed over the entire circumference of the third element formation layer and connected to the second conductive exposed portion,
The first to third element forming layers have at least one light processing function among a photoelectric conversion function and an electro-optical conversion function, depending on the combination thereof.
Optical device device. The optical device apparatus according to claim 1,
Insulating and transparent, further comprising an insulating coating formed to cover the entire circumference of the optical device structure,
Optical device device. The optical device apparatus according to claim 1 or 2,
The second conductive exposed portion of the second coated lead wire is embedded in the transparent conductive film;
Optical device device. The optical device device according to any one of claims 1 to 3,
The first element formation layer is formed in a substantially spherical shape centering on the first conductive exposed portion of the first covered lead wire,
The second element formation layer is formed reflecting the outer shape of the first element formation layer, the third element formation layer is formed reflecting the outer shape of the second element formation layer, and the transparent By forming the conductive film reflecting the outer shape of the third element formation layer,
The optical device structure is formed in a substantially spherical shape centering on the first conductive exposed portion of the first covered lead wire,
Optical device device. The optical device apparatus according to claim 2,
By forming the insulation coating portion reflecting the outer shape of the optical device structure,
The combined structure of the optical device structure and the insulating coating portion is formed in a substantially spherical shape centering on the first conductive exposed portion of the first coated lead wire,
Optical device device. The optical device apparatus according to claim 2 or 5, wherein
The insulating coating part is characterized in that any one of epoxy resin, silicone resin and glass is used as a constituent material.
Optical device device. The optical device apparatus according to any one of claims 1 to 6,
The first element formation layer is a semiconductor layer of one conductivity type of P type and N type,
The second element formation layer is an I-type semiconductor layer;
The third element formation layer is a semiconductor layer of the other conductivity type of P type and N type.
Optical device device. The optical device apparatus according to any one of claims 1 to 6,
The first element formation layer is a carrier transport layer of one of holes and electrons,
The second element formation layer is a photoelectric conversion layer or an electro-optic conversion layer,
The third element formation layer is a transport layer of the other carrier of holes and electrons,
Optical device device.

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