JP6586793B2 - 光電変換装置及び画像生成装置 - Google Patents
光電変換装置及び画像生成装置 Download PDFInfo
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- JP6586793B2 JP6586793B2 JP2015131277A JP2015131277A JP6586793B2 JP 6586793 B2 JP6586793 B2 JP 6586793B2 JP 2015131277 A JP2015131277 A JP 2015131277A JP 2015131277 A JP2015131277 A JP 2015131277A JP 6586793 B2 JP6586793 B2 JP 6586793B2
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- Prior art keywords
- photoelectric conversion
- integrator
- phototransistor
- switch
- constant current
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 title claims description 126
- 238000000034 method Methods 0.000 description 60
- 230000008569 process Effects 0.000 description 60
- 239000003990 capacitor Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 16
- 230000010354 integration Effects 0.000 description 14
- 238000009825 accumulation Methods 0.000 description 11
- 238000007599 discharging Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
- H10F30/245—Bipolar phototransistors
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
電圧源に接続されたコレクタ領域と、入射光を信号電荷に変換して蓄積するベース領域と、前記ベース領域に蓄積された信号電荷に応じた電流を出力するエミッタ領域とを有するフォトトランジスタを含む光電変換手段と、
を備え、
前記ベース電位設定手段は、前記エミッタ領域と接続される定電流源を含む。
第1実施形態に係る光電変換装置の構成の一例について説明する。図1は、第1実施形態に係る光電変換装置の一例を示す等価回路図である。
第2実施形態に係る光電変換装置の構成の一例について説明する。図10は、第2実施形態に係る光電変換装置の一例を示す等価回路図である。
第3実施形態に係る光電変換装置の構成の一例について説明する。図16は、第3実施形態に係る光電変換装置の一例を示す等価回路図である。
第4実施形態では、上記の光電変換装置を2次元方向に複数配置した画像生成装置について説明する。図22は、画像生成装置の構成の一例を示す図である。
10 画素セル
11 フォトトランジスタ
20 積分器
30 出力線
40 定電流源
50 リセット線
210 フィードバックアンプ
220 積分器接続スイッチ
312 第2定電流源
322 第2定電流源接続スイッチ
460 A/D変換アレイ
E エミッタ領域
C コレクタ領域
B ベース領域
Claims (7)
- 電圧源に接続されたコレクタ領域と、入射光を信号電荷に変換して蓄積するベース領域と、前記ベース領域に蓄積された信号電荷に応じた電流を出力するエミッタ領域とを有するバイポーラ構造のフォトトランジスタを含む光電変換手段と、
前記光電変換手段からの出力電流を予め設定された電流値になるように、前記フォトトランジスタのベース電位を設定するベース電位設定手段と
を備え、
前記ベース電位設定手段は、前記エミッタ領域と接続される定電流源を含む、
光電変換装置。 - 前記ベース電位設定手段は、
前記エミッタ領域と接続される2以上の前記定電流源と、
前記ベース電位設定手段により前記ベース電位を設定する場合と、前記ベース電位設定手段により前記ベース電位を設定しない場合とにおいて、2以上の前記定電流源の接続状態が異なる状態となるように切り替えるスイッチと
を含む、
請求項1に記載の光電変換装置。 - 前記ベース電位設定手段は、前記ベース領域に接続され、前記フォトトランジスタをリセットするリセット線を含み、
前記光電変換手段は、前記ベース領域と前記リセット線とを接続又は非接続にするスイッチを含む、
請求項1又は2に記載の光電変換装置。 - 前記ベース電位設定手段は、前記光電変換手段から出力される電流を積分処理して、所定の時間内で累積して電圧に変えて出力する積分器を含み、
前記リセット線は、前記積分器の出力に接続されている、
請求項3に記載の光電変換装置。 - 前記ベース電位設定手段は、前記光電変換手段から出力される電流が入力されるオペアンプを含み、
前記リセット線は、前記オペアンプの出力に接続されている、
請求項3に記載の光電変換装置。 - 複数の前記光電変換手段が2次元方向に配置された、
請求項1乃至5のいずれか一項に記載の光電変換装置。 - 請求項6に記載の光電変換装置と、
前記光電変換装置の出力をデジタル信号に変換するA/D変換回路と
を備える、
画像生成装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015131277A JP6586793B2 (ja) | 2015-06-30 | 2015-06-30 | 光電変換装置及び画像生成装置 |
US15/187,957 US10298869B2 (en) | 2015-06-30 | 2016-06-21 | Photoelectric conversion device and image generation device |
EP16176440.2A EP3113486B1 (en) | 2015-06-30 | 2016-06-27 | Photoelectric conversion device and image generation device |
CN201610497324.XA CN106331538B (zh) | 2015-06-30 | 2016-06-29 | 光电转换装置和图像产生装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015131277A JP6586793B2 (ja) | 2015-06-30 | 2015-06-30 | 光電変換装置及び画像生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017017479A JP2017017479A (ja) | 2017-01-19 |
JP6586793B2 true JP6586793B2 (ja) | 2019-10-09 |
Family
ID=56289323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015131277A Expired - Fee Related JP6586793B2 (ja) | 2015-06-30 | 2015-06-30 | 光電変換装置及び画像生成装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10298869B2 (ja) |
EP (1) | EP3113486B1 (ja) |
JP (1) | JP6586793B2 (ja) |
CN (1) | CN106331538B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180261620A1 (en) * | 2017-03-09 | 2018-09-13 | Macronix International Co., Ltd. | Three dimensional memory device and method for fabricating the same |
US10358717B2 (en) * | 2017-04-21 | 2019-07-23 | Lam Research Corporation | Method for depositing high deposition rate, thick tetraethyl orthosilicate film with low compressive stress, high film stability and low shrinkage |
KR20230084940A (ko) | 2021-12-06 | 2023-06-13 | 삼성전자주식회사 | 이미지 센서 장치 및 그것의 동작 방법 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4107721A (en) * | 1977-01-26 | 1978-08-15 | Bell Telephone Laboratories, Incorporated | Phototransistor |
JPH0448862A (ja) | 1990-06-18 | 1992-02-18 | Matsushita Electric Ind Co Ltd | イメージセンサおよびその駆動方法 |
JPH04100383A (ja) | 1990-08-18 | 1992-04-02 | Seiko Instr Inc | 固体撮像素子 |
JPH05275671A (ja) | 1992-03-30 | 1993-10-22 | Matsushita Electric Ind Co Ltd | フォトトランジスタおよびそれを用いたイメージセンサ |
JPH0622221A (ja) | 1992-06-30 | 1994-01-28 | Canon Inc | 固体撮像装置 |
US5461425A (en) * | 1994-02-15 | 1995-10-24 | Stanford University | CMOS image sensor with pixel level A/D conversion |
JP3774499B2 (ja) * | 1996-01-24 | 2006-05-17 | キヤノン株式会社 | 光電変換装置 |
US5769384A (en) | 1996-01-25 | 1998-06-23 | Hewlett-Packard Company | Low differential light level photoreceptors |
JP4154068B2 (ja) | 1999-04-12 | 2008-09-24 | キヤノン株式会社 | 固体撮像装置及びそれを用いた撮像システム及び画像読取システム |
US20010015404A1 (en) * | 2000-02-18 | 2001-08-23 | Minolta Co., Ltd. | Solid-state image-sensing device |
US7129883B2 (en) * | 2004-02-23 | 2006-10-31 | Sony Corporation | Method and apparatus for AD conversion, semiconductor device for detecting distribution of physical quantity, and electronic apparatus |
JP4762030B2 (ja) * | 2006-03-31 | 2011-08-31 | 三洋電機株式会社 | 光検出装置 |
JP5335318B2 (ja) * | 2008-08-18 | 2013-11-06 | キヤノン株式会社 | 光センサ、測定装置及びカメラシステム |
JP5495864B2 (ja) * | 2010-03-08 | 2014-05-21 | キヤノン株式会社 | 光電変換装置 |
JP5674096B2 (ja) | 2010-07-22 | 2015-02-25 | 独立行政法人産業技術総合研究所 | 光電変換セル及びアレイとその読み出し方法と回路 |
JP2012124835A (ja) | 2010-12-10 | 2012-06-28 | Konica Minolta Advanced Layers Inc | 固体撮像装置 |
US9197220B2 (en) | 2011-10-31 | 2015-11-24 | National Institute Of Advanced Industrial Science And Technology | Method for resetting photoelectric conversion device, and photoelectric conversion device |
JP5967406B2 (ja) * | 2012-01-19 | 2016-08-10 | 国立研究開発法人産業技術総合研究所 | センス回路とその動作方法および光電変換アレイ |
JP6205883B2 (ja) | 2013-06-17 | 2017-10-04 | 株式会社リコー | 光電変換装置及び画像生成装置 |
-
2015
- 2015-06-30 JP JP2015131277A patent/JP6586793B2/ja not_active Expired - Fee Related
-
2016
- 2016-06-21 US US15/187,957 patent/US10298869B2/en not_active Expired - Fee Related
- 2016-06-27 EP EP16176440.2A patent/EP3113486B1/en not_active Not-in-force
- 2016-06-29 CN CN201610497324.XA patent/CN106331538B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20170006246A1 (en) | 2017-01-05 |
EP3113486B1 (en) | 2019-06-12 |
CN106331538B (zh) | 2019-09-27 |
CN106331538A (zh) | 2017-01-11 |
EP3113486A1 (en) | 2017-01-04 |
JP2017017479A (ja) | 2017-01-19 |
US10298869B2 (en) | 2019-05-21 |
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