JP6557960B2 - Semiconductor device manufacturing member and method of manufacturing semiconductor device using the same - Google Patents

Description

  The present invention relates to a member for manufacturing a semiconductor device, a method for manufacturing a semiconductor device using the same, a thermosetting resin composition used in the member for manufacturing a semiconductor device and a method for manufacturing the semiconductor device, and the thermosetting resin composition The present invention relates to a thermosetting resin film having an object, and a semiconductor device using the thermosetting resin film. More specifically, the present invention relates to a semiconductor device manufacturing member and a method for manufacturing a semiconductor device using the same for manufacturing a wafer level semiconductor device that is highly demanded to be reduced in size and thickness while suppressing warpage.

As electronic devices become more sophisticated, semiconductor devices are becoming smaller and thinner. In recent years, semiconductor devices have become lighter, thinner, and smaller, and mounting forms such as chip size packages that are almost the same size as semiconductor elements and package-on-packages in which semiconductor devices are stacked on top of semiconductor devices have also been actively performed. In the future, it is expected that semiconductor devices will become increasingly smaller and thinner.
As one form of this chip size package, a wafer level chip size package manufactured at a wafer level has attracted attention as a technology for realizing an extremely small semiconductor device.

  By the way, a wafer level semiconductor device such as a wafer level chip size package is obtained by forming a rewiring layer on a wafer, providing external connection terminals such as solder balls, and then dicing into pieces (for example, Patent Literatures 1 to 3). When the number of terminals is about several tens to 100 pins, external connection terminals such as solder balls can be provided on the wafer.

However, when the miniaturization of semiconductor elements progresses and the number of terminals increases to 100 pins or more, it becomes difficult to form a rewiring layer only on the wafer and provide external connection terminals. When the external connection terminals are forcibly provided, the pitch between the terminals is reduced and the heights of the terminals are reduced, so that it is difficult to ensure connection reliability after mounting the semiconductor device. For this reason, it is required to cope with miniaturization of semiconductor elements, that is, an increase in the number of external connection terminals.
Against this background, in recent years, development of a semiconductor device in which external connection terminals can be provided outside the semiconductor element by rearranging the wafer after dividing it into a predetermined size has been promoted ( For example, see Patent Document 4).

  Since the semiconductor device described in Patent Document 4 separates the wafer into a predetermined size and then rearranges it, it can secure a wider rewiring area than rewiring on the wafer. It becomes possible to cope with a large number of pins.

  1 to 3 are diagrams showing a conventional method of manufacturing a semiconductor device. The semiconductor device shown in FIG. 3 (q) is obtained through processes such as rearrangement of semiconductor elements, sealing, formation of a rewiring layer, formation of wiring, formation of external connection terminals, and singulation.

First, a temporary fixing film is bonded to one side of the support to form a temporary fixing layer on the support (see FIG. 1A). Next, the semiconductor elements are rearranged at predetermined intervals so that the active surfaces (surfaces on which the circuits are formed) are in contact with the temporary fixing layer (see FIG. 1B).
Next, sealing is performed with a sealing material such as a thermosetting resin so as to cover the semiconductor element, and a curing process is performed as necessary (see FIG. 1C). Next, the support and the temporary fixing layer are peeled off by heating with a hot plate or the like, and the active surface of the semiconductor element is exposed (see FIGS. 1D and 1E).
Next, a photosensitive resin composition layer is formed on the active surface of the semiconductor element by spin coating or the like (see FIG. 2F). Next, a predetermined portion of the formed photosensitive resin composition layer is exposed and developed, and post-cured in an oven or the like (see FIG. 2G).
Next, a seed layer is formed by sputtering or the like (see FIG. 2H). A resist for circuit formation is formed on the seed layer by lamination or the like, and a predetermined portion is exposed and developed (see FIG. 2 (j)). Next, a wiring pattern is formed by electroplating (see FIG. 2 (k)). Next, the circuit forming resist is removed with a stripping solution (see FIG. 3M). Next, the seed layer is removed by etching (see FIG. 3 (n)). Next, a photosensitive resin composition layer is formed again by spin coating or the like, and a predetermined portion is exposed and developed, and then post-cured in an oven or the like (see FIG. 3 (p)). Next, the solder balls are reflow mounted. Finally, a semiconductor device can be manufactured by dicing into individual pieces (see FIG. 3 (q)).

JP 2004-14789 A JP 2001-244372 A Japanese Patent Laid-Open No. 2001-127095 US Patent Application Publication No. 2007/205513

Since the semiconductor device obtained by the above method can be reduced in size and thickness, it is preferably used for electronic devices such as smartphones and tablet terminals whose functions are becoming higher and more multifunctional.
However, in the semiconductor device manufactured by the above method, the active surface side of the semiconductor element is not sealed with a sealing material such as a thermosetting resin after sealing with a thermosetting resin or the like. The symmetry is low (see FIG. 1 (e)). Therefore, there is a problem that warpage is likely to occur. Further, when manufacturing a thin semiconductor device, this warp tends to occur more easily, and it is difficult to cope with the reduction in thickness.

The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a semiconductor device manufacturing member that can reduce the warpage and thickness of a semiconductor device.
Also, an efficient semiconductor device manufacturing method using the semiconductor device manufacturing member, a thermosetting resin composition used in the semiconductor device manufacturing member and a semiconductor device manufacturing method, and the thermosetting resin composition It aims at providing the semiconductor device which uses the thermosetting resin film which has this, and this thermosetting resin film.

As a result of investigations to solve the above problems, the present inventors have found that the problems can be solved by the following present invention.
That is, the present invention provides the following [1] to [8].
[1] A semiconductor device manufacturing member used for rearrangement of a semiconductor element, having at least a temporary fixing layer and a thermosetting resin composition layer (a).
[2] The semiconductor device manufacturing member according to [1], including at least the support (1), the temporary fixing layer, and the thermosetting resin composition layer (a) in this order.
[3] The member for manufacturing a semiconductor device according to the above [1] or [2], wherein the thickness T _{1 of the} thermosetting resin composition layer (a) is 2 to 120 μm.
[4] A resin in which the thermosetting resin composition layer (a) includes one or more selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, and a maximum particle size of 20 μm or less. In addition, for manufacturing a semiconductor device according to any one of the above [1] to [3], which is formed by layering a thermosetting resin composition containing an inorganic filler having an average particle size of 5 μm or less. Element.
[5] A method for manufacturing a semiconductor device, comprising the following steps (I) to (XI).
(I) On the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device according to any one of the above [1] to [4], one or more semiconductor elements are arranged on an active surface of the semiconductor element. Step (II) of rearranging the thermosetting resin composition layer (a) so as to contact with the thermosetting resin composition layer (a), wherein the passive surface of the one or more semiconductor elements is sealed with a sealing resin composition, Step (III) of Forming Insulating Layer (B) Covering the Surface Insulating Layer (A) Formed by Curing Thermosetting Resin Composition Layer (a) and Curing Thermosetting Resin Composition Layer (a) Step (IV) Step of peeling the temporary fixing layer of the semiconductor device manufacturing member (V) Step of grinding the insulating layer (A) to form an opening reaching the active surface of the semiconductor element (VI) Forming a seed layer on the insulating layer (A) (VII) forming a resist for circuit formation on the seed layer; Step of forming a resist pattern for rewiring by performing processing and development processing (VIII) After forming a wiring pattern by electroplating, removing the resist pattern by stripping treatment (IX) Removing the seed layer Step (X) After forming an insulating layer (C) on the wiring pattern, forming an opening reaching the wiring pattern (XI) Forming an external connection terminal [6] [1] to [ 4] is a thermosetting resin composition used for a member for manufacturing a semiconductor device according to any one of
Contains a resin containing one or more selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, and an inorganic filler having a maximum particle size of 20 μm or less and an average particle size of 5 μm or less. A thermosetting resin composition.
[7] For manufacturing a semiconductor device according to any one of [1] to [4], which is obtained by applying and drying the thermosetting resin composition according to [6] on a support (2). A thermosetting resin film used for manufacturing members.
[8] A semiconductor device using the thermosetting resin film according to [7].

ADVANTAGE OF THE INVENTION According to this invention, the member for semiconductor device manufacture which enables low curvature and thickness reduction of a semiconductor device can be provided.
Also, an efficient semiconductor device manufacturing method using the semiconductor device manufacturing member, a thermosetting resin composition used in the semiconductor device manufacturing member and a semiconductor device manufacturing method, and the thermosetting resin composition There can be provided a thermosetting resin film having a semiconductor device and a semiconductor device using the thermosetting resin film.

It is a figure which shows the manufacturing method of the conventional semiconductor device. FIG. 2 is a diagram showing a conventional method for manufacturing a semiconductor device showing a continuation of FIG. 1. FIG. 3 is a diagram showing a conventional method for manufacturing a semiconductor device showing a continuation of FIG. 2. It is an end view which shows typically an example of the manufacturing method of the semiconductor device of this invention. FIG. 5 is an end view schematically showing an example of the method for manufacturing a semiconductor device of the present invention showing a continuation of FIG. 4. FIG. 6 is an end view schematically showing an example of the method for manufacturing a semiconductor device of the present invention showing a continuation of FIG. 5. FIG. 7 is an end view schematically showing one example of a method for manufacturing a semiconductor device of the present invention showing a continuation of FIG. 6.

[Semiconductor device manufacturing members]
The member for manufacturing a semiconductor device of the present invention is a member for manufacturing a semiconductor device used for rearrangement of semiconductor elements, which has at least a temporary fixing layer and a thermosetting resin composition layer (a).
As one aspect of the member for manufacturing a semiconductor device of the present invention, a member for manufacturing a semiconductor device shown in FIG. This member has a laminated structure which has the support body (1) 1, the temporary fixing layer 2, and the thermosetting resin composition layer (a) 3 in this order.
Hereinafter, a typical method of using the semiconductor device manufacturing member of the present invention will be described with reference to FIGS.

On the thermosetting resin composition layer (a) 3 of the semiconductor device manufacturing member shown in FIG. 4B, the active surface is thermoset at predetermined intervals as shown in FIG. 4C. The semiconductor element 4 is rearranged by sticking so as to be in contact with the conductive resin composition layer (a) 3.
Next, as shown in FIG. 4D, the passive surface of the rearranged semiconductor element 4 is sealed with a sealing material to form an insulating layer (B) 6. Next, the thermosetting resin composition layer (a) is cured to form an insulating layer (A) 5 formed by curing the thermosetting resin composition layer (a). Further, the support (1) 1 and the temporary fixing layer 2 are peeled from the laminate after the curing treatment (see FIGS. 5 (e) and (f)).
Next, the insulating layer (A) 5 is ground to form an opening reaching the active surface of the semiconductor element 4 (see FIG. 5G), and then a seed layer 7 is formed (FIG. 5H). Reference), a resist pattern 8 is formed on the seed layer 7 using a photosensitive resin composition (see FIG. 5J).
Thereafter, a wiring pattern 9 is formed by plating (see FIG. 6K), and the resist pattern 8 and the seed layer 7 are removed (see FIGS. 6M and 6N).
Further, an insulating layer (C) 10 is formed so as to cover the wiring pattern 9 (see FIG. 6 (p)), and an opening is formed in the insulating layer (C) 10 (see FIG. 7 (q)). After plating 11 is applied to the wiring pattern 9 exposed from the opening (see FIG. 7 (r)), the external connection terminals 12 are formed (see FIG. 7 (s)), and then dicing into individual pieces. The semiconductor device shown in (t) can be obtained.

  Thus, in the semiconductor device obtained using the semiconductor device manufacturing member of the present invention, the resin composition layer is formed on the active surface and the passive surface of the semiconductor device. Can be increased. This can suppress warpage of the obtained semiconductor device, and it is considered that the semiconductor device can be efficiently formed in the subsequent manufacturing process.

<Thermosetting resin composition layer (a)>
A thermosetting resin composition layer (a) is a layer comprised from a thermosetting resin composition, and is a layer used in order to rearrange a semiconductor element.
The thermosetting resin in the thermosetting resin composition layer (a) is preferably semi-cured or uncured from the viewpoint of enabling rearrangement of the semiconductor element.
In this specification, “semi-cured” means B-stage (cured intermediate of thermosetting resin composition, as defined in JIS K 6800 “Adhesive / Adhesive Terminology”. The resin softens when heated and swells when exposed to certain solvents, but does not melt or dissolve completely). “Uncured” means a substantially thermosetting resin in the solvent. Means a state in which all of is dissolved.

The thickness T ₁ of the thermosetting resin composition layer (a) is preferably 2 to 120 μm, more preferably 5 to 50 μm, and still more preferably 10 to 30 μm. By setting the thickness of the thermosetting resin composition layer (a) to 120 μm or less, a fine opening diameter can be provided by grinding. By making the thickness of the thermosetting resin composition layer (a) 2 μm or more, the thickness of the thermosetting resin composition layer (a) can be easily controlled, and the smoothness on the active surface side of the semiconductor element is improved. Can do.

The thermosetting resin composition layer (a) is not particularly limited, but a resin containing one or more selected from an epoxy resin, a cyanate resin, a phenol resin, a polyamideimide resin, and a thermosetting polyimide resin, and a maximum particle size. It is preferable to form a layer of a thermosetting resin composition containing an inorganic filler having an average particle size of 20 μm or less and an average particle size of 5 μm or less.
Hereinafter, the thermosetting resin composition of the present invention that is suitably used for the member for manufacturing a semiconductor device of the present invention will be described.

(Thermosetting resin composition)
The resin contained in the thermosetting resin composition of the present invention is preferably at least one selected from an epoxy resin, a cyanate resin, a phenol resin, a polyamideimide resin, and a thermosetting polyimide resin. From the viewpoint of more effectively expressing low warpage and thinning of the semiconductor device, it is more preferable to contain an epoxy resin, and it is particularly preferable to contain an epoxy resin and a curing agent for epoxy resin. Moreover, you may contain carboxylic acid containing resin, such as an acrylic resin, acid-modified epoxy acrylate, and an acid containing urethane resin, as needed.

〔Epoxy resin〕
The epoxy resin is not particularly limited as long as it is an epoxy resin having two or more glycidyl groups. For example, bisphenol type epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol S type epoxy resin; Phenolic epoxy resin; biphenyl type epoxy resin; naphthalene type epoxy resin; dicyclopentadiene type epoxy resin; bixylenol type epoxy resin such as bixylenol diglycidyl ether; hydrogenated bisphenol A type epoxy resin such as hydrogenated bisphenol A glycidyl ether And their dibasic acid-modified diglycidyl ether type epoxy resins. These can be used alone or in combination of two or more.

A commercially available product may be used as the epoxy resin. Examples of commercially available epoxy resins include “Epiclon EXA-4700” (tetrafunctional naphthalene type epoxy resin) manufactured by DIC Corporation, and “NC-7000” (polyfunctional solid epoxy resin containing naphthalene skeleton) manufactured by Nippon Kayaku Co., Ltd. Naphthalene type epoxy resins such as “EPPN-502H” (trisphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd., and epoxidized products (trisphenol type) of condensation products of phenols and aromatic aldehydes having a phenolic hydroxyl group Epoxy resin); dicyclopentadiene aralkyl epoxy resin such as “Epiclon HP-7200H” (dicyclopentadiene skeleton-containing polyfunctional solid epoxy resin) manufactured by DIC Corporation; “NC-3000H” (manufactured by Nippon Kayaku Co., Ltd.) Biphenyl aralkyl such as biphenyl skeleton-containing polyfunctional solid epoxy resin) Epoxy resin; Novolac type epoxy resin such as “Epiclon N660”, “Epiclon N690” manufactured by DIC Corporation, “EOCN-104S” manufactured by Nippon Kayaku Co., Ltd .; Tris such as “TEPIC” manufactured by Nissan Chemical Industries, Ltd. (2,3-epoxypropyl) isocyanurate, manufactured by DIC Corporation "Epicron 860", "Epicron 900-IM", "Epicron EXA-4816", "Epicron EXA-4822", manufactured by Nippon Steel Chemical Co., Ltd. Bisphenol A type epoxy resins such as “Epototo YD-134”, Mitsubishi Chemical Corporation “JER834”, “JER872”, Sumitomo Chemical Co., Ltd. “ELA-134”; DIC Corporation “Epiclon HP-4032” Naphthalene-type epoxy resin such as “Epiclon N-740” manufactured by DIC Corporation Epoxy resins, epoxy resins of the condensation product of phenol with salicylaldehyde; manufactured by Nippon Kayaku Co., Ltd., "EPPN-500 series" and the like.
Among the above epoxy resins, biphenyl aralkyl type epoxy resins such as “NC-3000H” (biphenyl skeleton-containing polyfunctional solid epoxy resin) manufactured by Nippon Kayaku Co., Ltd. are used because of their excellent adhesion to copper and insulation. In addition, “EPPN-500 series” manufactured by Nippon Kayaku Co., Ltd. is preferable from the viewpoint of high crosslinking density and high Tg.
The content of the epoxy resin in the thermosetting resin composition (a) is preferably 30 to 90 parts by mass, more preferably 40 to 80 parts by mass, further preferably 100 parts by mass of the resin component excluding the inorganic filler. Is 50-80 parts by mass.

When using an epoxy resin as a thermosetting resin, it is preferable to use an epoxy resin curing agent in combination, and a curing accelerator may be used in combination as necessary.
As the curing agent combined with the epoxy resin, a conventionally known curing agent for epoxy resin can be used.
Examples of the epoxy resin curing agent include phenol resins, acid anhydrides, aliphatic amines, alicyclic polyamines, aromatic polyamines, dicyandiamide, and guanidines. Specifically, 4,4′-diaminodiphenylsulfone, 4,4′-bis (4-aminophenoxy) biphenyl, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,3- Bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, trimethylenebis (4-aminobenzoate), 3,3′-dimethyl-4,4′-diaminobiphenyl, 2,2 '-Dimethyl-4,4'-diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-amino Phenoxy) phenyl] sulfone, 9,9′-bis (4-aminophenyl) fluorene, 2,2-bis [4- (4-aminophenoxy) Eniru] hexafluoropropane, and the like. These epoxy resin curing agents can be used alone or in combination of two or more.
Further, as a curing agent for epoxy resin, a cyanate resin, a phenol resin, a polyamideimide resin and a thermosetting polyimide resin, which will be described later, which are preferably used in the thermosetting resin composition of the present invention may be used. From the viewpoint of more effectively expressing low warpage and thinning, it is preferable to use a polyamideimide resin or a thermosetting polyimide resin as a curing agent for an epoxy resin.

  The content of the curing agent for the epoxy resin in the thermosetting resin composition may be appropriately determined according to the type of the curing agent for the epoxy resin and the epoxy resin, but it can further reduce the warpage and thickness of the semiconductor device. From the viewpoint of effective expression, the amount is preferably 5 to 50 parts by mass, more preferably 10 to 40 parts by mass with respect to 100 parts by mass of the resin component excluding the inorganic filler.

  A conventionally well-known hardening accelerator can be used as a hardening accelerator combined with an epoxy resin. Specifically, heterocyclic compounds such as imidazole compounds or epoxy adducts or microencapsulated products thereof, DBU (1,8-diazabicyclo (4.5.0) undecene-7) or derivatives thereof; tertiary amine compounds; Organic phosphine compounds such as triphenylphosphine; onium salt compounds such as tetraphenylphosphonium salts and tetraphenylborate salts. These curing accelerators can be used alone or in combination of two or more.

[Phenolic resin]
The phenol resin is not particularly limited as long as it is a phenol resin having two or more phenolic hydroxyl groups in one molecule. For example, resorcin, catechol, bisphenol A, bisphenol F and substituted or unsubstituted biphenol 1 Compound having two phenolic hydroxyl groups in the molecule, aralkyl type phenol resin, dicyclopentadiene type phenol resin, triphenylmethane type phenol resin, novolac type phenol resin, copolymerized phenol of benzaldehyde type phenol and aralkyl type phenol Resin, paraxylylene and / or metaxylylene modified phenolic resin, melamine modified phenolic resin, terpene modified phenolic resin, dicyclopentadiene type naphthol resin, cyclopentadiene modified phenolic resin, polycyclic Incense ring-modified phenolic resins, biphenyl type phenol resins, and phenol resins obtained by copolymerization of two or more thereof. These phenol resins can be used alone or in combination of two or more.
The phenol resin may be used in combination with a conventionally known curing agent for phenol resin, or may be used as a curing agent for epoxy resin.

[Thermosetting polyimide resin]
The thermosetting polyimide resin preferably contains a bismaleimide compound having at least two unsaturated N-substituted maleimide groups in the molecular structure. Specifically, for example, N, N′-ethylene bismaleimide, N, N′-hexamethylene bismaleimide, N, N ′-(1,3-phenylene) bismaleimide, N, N ′-[1,3 -(2-methylphenylene)] bismaleimide, N, N '-[1,3- (4-methylphenylene)] bismaleimide, N, N'-(1,4-phenylene) bismaleimide, bis (4- Maleimidophenyl) methane, bis (3-methyl-4-maleimidophenyl) methane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, bis (4-maleimidophenyl) ether, bis (4 -Maleimidophenyl) sulfone, bis (4-maleimidophenyl) sulfide, bis (4-maleimidophenyl) ketone, bis (4-maleimidocyclohexyl) Tan, 1,4-bis (4-maleimidophenyl) cyclohexane, 1,4-bis (maleimidomethyl) cyclohexane, 1,4-bis (maleimidomethyl) benzene, 1,3-bis (4-maleimidophenoxy) benzene, 1,3-bis (3-maleimidophenoxy) benzene, bis [4- (3-maleimidophenoxy) phenyl] methane, bis [4- (4-maleimidophenoxy) phenyl] methane, 1,1-bis [4- ( 3-maleimidophenoxy) phenyl] ethane, 1,1-bis [4- (4-maleimidophenoxy) phenyl] ethane, 1,2-bis [4- (3-maleimidophenoxy) phenyl] ethane, 1,2-bis [4- (4-Maleimidophenoxy) phenyl] ethane, 2,2-bis [4- (3-maleimidophenoxy) Enyl] propane, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane, 2,2-bis [4- (3-maleimidophenoxy) phenyl] butane, 2,2-bis [4- (4 -Maleimidophenoxy) phenyl] butane, 2,2-bis [4- (3-maleimidophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, 2,2-bis [4- ( 4-maleimidophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, 4,4-bis (3-maleimidophenoxy) biphenyl, 4,4-bis (4-maleimidophenoxy) biphenyl, Bis [4- (3-maleimidophenoxy) phenyl] ketone, bis [4- (4-maleimidophenoxy) phenyl] ketone, 2,2-bis (4-maleimi Dophenyl) disulfide, bis (4-maleimidophenyl) disulfide, bis [4- (3-maleimidophenoxy) phenyl] sulfide, bis [4- (4-maleimidophenoxy) phenyl] sulfide, bis [4- (3-maleimidophenoxy) ) Phenyl] sulfoxide, bis [4- (4-maleimidophenoxy) phenyl] sulfoxide, bis [4- (3-maleimidophenoxy) phenyl] sulfone, bis [4- (4-maleimidophenoxy) phenyl] sulfone, bis [4 -(3-maleimidophenoxy) phenyl] ether, bis [4- (4-maleimidophenoxy) phenyl] ether, 1,4-bis [4- (4-maleimidophenoxy) -α, α-dimethylbenzyl] benzene, 1 , 3-Bis [4- (4-maleimidophene Noxy) -α, α-dimethylbenzyl] benzene, 1,4-bis [4- (3-maleimidophenoxy) -α, α-dimethylbenzyl] benzene, 1,3-bis [4- (3-maleimidophenoxy) -Α, α-dimethylbenzyl] benzene, 1,4-bis [4- (4-maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4 -Maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, 1,4-bis [4- (3-maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, Examples include 1,3-bis [4- (3-maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, polyphenylmethanemaleimide and the like. These maleimide compounds can be used alone or in combination of two or more.

As the polymerization catalyst for the maleimide compound, known polymerization catalysts for bismaleimide resins can be used. For example, imidazoles, tertiary amines, quaternary ammonium salts, boron trifluoride amine complexes, organo Examples thereof include ion catalysts such as phosphine and organophosphonium salt; organic peroxides such as hydroperoxide, radical polymerization initiators such as azo compounds such as azoisobutyronitrile.
The addition amount of the polymerization catalyst may be appropriately determined according to the purpose, but is preferably 0.1 to 3.0 parts by mass with respect to 100 parts by mass of the resin component from the viewpoint of stability of the maleimide resin composition. is there.

A thermosetting polyimide resin is also preferably used as a curing agent for epoxy resins. As a thermosetting polyimide resin suitably used as a curing agent for epoxy resin, preferably a reaction product of the maleimide compound and a diamine compound, more preferably an amine compound having an acidic substituent with the maleimide compound, the diamine compound, and The reaction product.
Examples of the diamine compound used in the production of the reaction product include m-phenylenediamine, p-phenylenediamine, 1,4-bis (4-aminophenoxy) benzene, and 4,4′-diamino which are aromatic amines. Diphenylmethane, 3,3′-dimethyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-4,4′-diaminodiphenylmethane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 4,4′-diaminobenzophenone, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenylsulfone, 4,4′-diaminodiphenylsulfone, bis [4- (4-aminophenoxy) phenyl] sulfone, benzidine, 4,4'-bis (4-aminophenoxy) biphenyl, 4,4'-diaminodiphenylsulfur It de, benzoguanamine 4,4'-diamino-3,3'-biphenyl diol and guanamine compounds is preferably exemplified.
Moreover, as an amine compound which has an acidic substituent used for manufacture of the said reaction material, m-aminophenol, p-aminophenol, o-aminophenol, p-aminobenzoic acid, m-aminobenzoic acid, o Preferred examples include -aminobenzoic acid, o-aminobenzenesulfonic acid, m-aminobenzenesulfonic acid, p-aminobenzenesulfonic acid, 3,5-dihydroxyaniline, 3,5-dicarboxyaniline and the like.

[Polyamideimide resin]
Polyamideimide resin is a resin having an amide bond and an imide bond in the molecular skeleton, and is obtained, for example, by reacting a compound having both a carboxyl group and a carboxylic acid anhydride in the molecule with a diisocyanate compound. And those obtained by reacting a dicarboxylic acid compound having an imide group with a diisocyanate compound.
The dicarboxylic acid compound having an imide group can be obtained, for example, by reacting a diamine compound with a tricarboxylic acid compound such as trimellitic anhydride. As a diamine compound used for the production of a dicarboxylic acid compound having an imide group, for example, (4,4′-diamino) dicyclohexylmethane is preferably mentioned. From the viewpoint of adjusting the physical properties of the cured product, 3,3′-dihydroxy A diamine compound having a phenolic hydroxyl group such as -4,4'-diaminobiphenyl may be used.
Preferred examples of the diisocyanate compound include 4,4′-diphenylmethane diisocyanate.
As the polyamide-imide resin, for example, “Vilomax HR11NN”, “Vilomax HR12N2”, “Vilomax HR16NN” manufactured by Toyobo Co., Ltd. are commercially available.

[Cyanate resin]
The cyanate resin is not particularly limited as long as it is a compound having two or more isocyanate groups in the molecule. For example, bis (4-cyanatephenyl) methane, bis (3-methyl-4-cyanatephenyl) methane, bis (3-ethyl-4-cyanatephenyl) methane, bis (3,5-dimethyl-4-cyanatephenyl) methane, 1,1-bis (4-cyanatephenyl) ethane, 2,2-bis (4-cyanatephenyl) Propane, 2,2-bis (4-cyanatephenyl) -1,1,1,3,3,3-hexafluoropropane, di (4-cyanatephenyl) ether, di (4-cyanatephenyl) thioether, 4 , 4-dicyanate-diphenyl and the like. These cyanate resins can be used alone or in combination of two or more.

[Inorganic filler]
As the inorganic filler, conventionally known inorganic fillers can be used, for example, barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, Examples thereof include aluminum oxide, aluminum hydroxide, silicon nitride, and aluminum nitride, and metal powders such as copper, tin, zinc, nickel, silver, palladium, aluminum, iron, cobalt, gold, and platinum. These inorganic fillers can be used alone or in combination of two or more.

The maximum particle size of the inorganic filler contained in the thermosetting resin composition of the present invention is 20 μm or less, preferably 10 μm or less, more preferably 5 μm or less, and even more preferably 1 μm or less.
The average particle size of the inorganic filler is 5 μm or less, preferably 3 μm or less, more preferably 1 μm or less, still more preferably 300 nm or less, and particularly preferably 100 nm or less.
By setting the maximum particle size and the average particle size of the inorganic filler within the above ranges, the surface after the desmear treatment can be smoothed.
The maximum particle size and the average particle size of the inorganic filler are preferably smaller, but from the viewpoint of productivity and availability, the maximum particle size is preferably 50 nm or more, more preferably 100 nm or more, and the average particle size. Is preferably 2 nm or more, more preferably 10 nm or more.
The maximum particle size and the average particle size of the inorganic filler here are the dynamic light scattering nanotrack particle size distribution meter “UPA-EX150” (manufactured by Nikkiso Co., Ltd.) or the laser diffraction scattering type microtrack particle size distribution meter “MT”. -3100 "(manufactured by Nikkiso Co., Ltd.).

  The content of the inorganic filler in the thermosetting resin composition is preferably 0 to 90 masses with respect to 100 mass parts of the resin component from the viewpoint of more effectively expressing low warpage and thinning of the semiconductor device. Parts, more preferably 10 to 70 parts by mass, and still more preferably 20 to 40 parts by mass.

When silica is used as the inorganic filler, it is preferable to use silica surface-treated with a silane coupling agent.
As the silane coupling agent, generally available ones can be used, for example, alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acrylic silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, Sulfur silane, styryl silane, alkylchlorosilane, and the like can be used.

(Method for producing thermosetting resin composition)
Although the manufacturing method of the thermosetting resin composition of this invention is not specifically limited, For example, it can manufacture by mixing the said resin component, an inorganic filler, etc. using a well-known stirrer, a mixer, etc. .
The thermosetting resin composition is preferably obtained as a liquid or thermosetting resin composition solution (hereinafter also referred to as “resin varnish”) from the viewpoint of subsequent coating or the like.
As a method for obtaining a resin varnish, for example, each component is dissolved or dispersed in a solvent with a known stirrer or the like, or a thermosetting resin composition obtained by previously melting and mixing each component is dissolved in a solvent. Or the method of dispersing is mentioned.
The solvent is not particularly limited as long as it can dissolve the resin component and can disperse the inorganic filler, and examples thereof include dimethylacetamide and N-methyl-2-pyrrolidone.

<Temporary fixing layer>
The member for manufacturing a semiconductor device of the present invention has a temporary fixing layer. The temporary fixing layer is a layer that is peeled after the semiconductor element is rearranged on the thermosetting resin composition layer (a).
As the temporary fixing layer, a film for temporary fixing generally used for manufacturing a semiconductor device can be used.
Examples of the temporary fixing film include, for example, an ultraviolet peeling film whose adhesive strength is reduced by performing ultraviolet irradiation, a fixing film which is dissolved by a specific chemical, a thermal peeling film whose adhesive strength is reduced by heat treatment, and the like. From the viewpoints of workability, safety, and environmental protection, a heat release film is preferable.

<Support (1)>
The member for manufacturing a semiconductor device of the present invention may have a support (1) on the surface opposite to the surface on which the thermosetting resin composition layer (a) of the temporary fixing layer is provided.
Although it does not specifically limit as a support body (1), The core base material with a glass cloth which impregnated resin to the SUS board, silicon wafer, glass cloth with a small dimensional change by a heat | fever, etc. are preferable. The thickness of the support (1) is not particularly limited, but is preferably 0.4 to 3.0 mm, more preferably 0.5 to 3.0 mm. When it is 0.4 mm or more, deformation can be suppressed, and when it is 3.0 mm or less, even when a SUS plate is used, the mass does not become too large and the handling becomes good.

<Method for Manufacturing Member for Manufacturing Semiconductor Device>
The manufacturing method of the member for manufacturing a semiconductor device of the present invention can be manufactured, for example, by the following step (i) or (ii).
(I) A method of applying a liquid thermosetting resin composition or the resin varnish on a temporary fixing layer.
(Ii) A method of adhering a thermosetting resin film obtained by applying and drying the thermosetting resin composition of the present invention on a support (2) to a temporary fixing layer.

(Process (i))
Step (i) is a method of applying a liquid thermosetting resin composition or the resin varnish on the temporary fixing layer.
Examples of the method for applying the thermosetting resin composition include application by a known coater and application by a printing method. The method of the coater is not particularly limited, and a die, comma, dip, spin, or the like can be used.
Although the drying conditions after apply | coating a resin varnish are not specifically limited, From a viewpoint of removing a solvent, maintaining a thermosetting resin composition in the uncured or semi-hardened state, As drying temperature, Preferably it is 50. The drying time is preferably 1 to 30 minutes. As the dryer, a hot plate, a drying furnace, or the like can be used.

(Process (ii))
Step (ii) is a method of sticking a thermosetting resin film obtained by applying and drying the thermosetting resin composition of the present invention on the support (2) to the temporary fixing layer.
The thermosetting resin film of the present invention that is preferably used in the step (ii) will be described.

[Thermosetting resin film]
The thermosetting resin film of this invention can be manufactured by apply | coating and drying the thermosetting resin composition of this invention on a support body (2).
The support (2) is not particularly limited, and a known film such as a polyethylene terephthalate film (hereinafter also referred to as “PET film”) can be used. The thickness of the support (2) may be appropriately selected according to the material used, but is preferably 1 to 50 μm, more preferably 10 to 30 μm.
The thickness of the thermosetting resin film is preferably 2 to 120 μm, more preferably 5 to 50 μm, and still more preferably 10 to 30 μm.

The thermosetting resin film is produced by applying the liquid thermosetting resin composition or the resin varnish on the support (2) using a known coater or the like, and then drying it with a dryer or the like. be able to.
Examples of the application method include the same method as in step (i).
Although it does not specifically limit as drying conditions, From a viewpoint of removing a solvent, maintaining a thermosetting resin composition in the uncured or semi-hardened state, As drying temperature, Preferably it is 50-150 degreeC, More preferably Is 80 to 120 ° C., and the drying time is preferably 1 to 60 minutes, more preferably 5 to 20 minutes.
Moreover, you may stick protective films, such as a polyethylene film, to a resin film from a viewpoint of suppressing adhesion of dust etc. to a thermosetting resin composition layer (a).

By sticking the thermosetting resin film thus obtained to a temporary fixing layer using a known vacuum laminator, roll laminator, press, or the like, the member for manufacturing a semiconductor device of the present invention is manufactured. be able to.
The temperature, time, and pressure of the laminator in the step of bonding to the temporary fixing layer may be selected as appropriate so long as the thermosetting resin composition is uniform on the temporary fixing layer and air entrapment does not occur. The temperature of the laminator is preferably 40 to 120 ° C, more preferably 60 to 100 ° C, from the viewpoint of improving the embedding property of the semiconductor element.
From the same viewpoint, the laminator time is preferably 1 to 60 seconds, more preferably 2 to 20 seconds.
The pressure of the laminator is preferably 0.05 to 1.0 MPa, more preferably 0.2 to 0.6 MPa from the same viewpoint.

[Method for Manufacturing Semiconductor Device]
The method for manufacturing a semiconductor device of the present invention includes the following steps (I) to (XI).
(I) On the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device of the present invention, one or more semiconductor elements, an active surface of the semiconductor element, a thermosetting resin composition layer (a), and (II) sealing the passive surface of the one or more semiconductor elements with a sealing resin composition to form an insulating layer (B) that covers the passive surface of the semiconductor element Step (III) Step of curing the thermosetting resin composition layer (a) and curing the thermosetting resin composition layer (a) to form an insulating layer (A) (IV) Manufacturing of the semiconductor device (V) Grinding the insulating layer (A) to form an opening reaching the active surface of the semiconductor element (VI) Forming a seed layer on the insulating layer (A) Step (VII) A resist for circuit formation is formed on the seed layer, and an exposure process and a development process are performed, and the process is repeated. Step of forming a resist pattern for lines (VIII) Forming a wiring pattern by an electroplating method, then removing the resist pattern by a peeling process (IX) Removing the seed layer (X) On the wiring pattern Forming an opening reaching the wiring pattern after forming the insulating layer (C) in (XI) forming an external connection terminal

  Since the semiconductor device obtained by the semiconductor device manufacturing method of the present invention uses the semiconductor device manufacturing member of the present invention, a resin composition layer is formed on the active surface and passive surface of the semiconductor device. Thereby, the structural symmetry in the thickness direction of the semiconductor device can be increased, and the warp of the obtained semiconductor device can be suppressed. Therefore, it is considered that the semiconductor device can be formed efficiently. The method for manufacturing a semiconductor device according to the present invention is particularly suitable in the form of a wafer level semiconductor device that is becoming smaller and thinner.

Hereinafter, preferred embodiments of the production method of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.
Here, a method for manufacturing the semiconductor device shown in FIG. 7 (t) from the mode shown in FIG. 4 (a) will be described step by step.

<Process (I)>
In step (I), as shown in FIG. 4C, one or more semiconductor elements 4 are placed on the thermosetting resin composition layer (a) 3 of the member for manufacturing a semiconductor device of the present invention. It is the process of rearrange | positioning so that an active surface and thermosetting resin composition layer (a) may contact | abut.

<Process (II)>
In step (II), as shown in FIG. 4D, the passive surface of the one or more semiconductor elements 4 is sealed with a sealing resin composition, and an insulating layer ( B) A step of forming 6.

The resin contained in the encapsulating resin composition may be any of thermosetting, thermoplastic, or photosensitive, but a thermosetting resin is preferable from the viewpoint of heat resistance and other reliability.
In addition, in this specification, when using a thermosetting resin as a resin composition for sealing, the resin composition layer which seals the passive surface of the semiconductor element 4 before hardening is referred to as “thermosetting resin composition layer ( b) ", and a layer formed by curing the thermosetting resin composition layer (b) is referred to as" insulating layer (B) ".
When a thermosetting or photosensitive resin is used as the resin contained in the sealing resin composition, it is preferable to perform thermosetting and / or post-UV curing after sealing.
The thermosetting conditions may be appropriately determined according to the type of resin to be used, but from the viewpoint of sufficiently proceeding the curing reaction and improving the productivity, the curing temperature is preferably 80 to 230 ° C, more preferably. Is 100 to 200 ° C., more preferably 140 to 200 ° C., and the curing time is preferably 5 to 180 minutes, more preferably 10 to 120 minutes, and further preferably 30 to 80 minutes.
As the thermosetting resin composition used for the sealing resin composition, a thermosetting resin generally used for semiconductor sealing can be used. For example, the thermosetting resin composition of the present invention is used. it can.
The form of the sealing resin composition is not particularly limited, and may be any of liquid, granule, and film. Moreover, a commercially available transfer sealing molding machine, a compression sealing molding machine, etc. can be used for the sealing method using the sealing resin composition.

  The thickness of the insulating layer (B) is preferably 25 to 500 μm, more preferably 100 to 300 μm, and still more preferably 200 to 300 μm. By setting the thickness of the insulating layer (B) to 500 μm or less, it is suitable for a thin semiconductor device. On the other hand, when the thickness of the insulating layer (B) is 25 μm or more, the thickness of the semiconductor element 4 is not excessively limited, and the semiconductor element 4 is disposed in the thermosetting resin composition layer (a). In addition, the semiconductor element 4 can be prevented from cracking when sealed with the sealing resin composition.

<Step (III)>
Step (III) is a step of curing the thermosetting resin composition layer (a) to form the insulating layer (A) 5 formed by curing the thermosetting resin composition layer (a).
The thermosetting conditions may be appropriately determined according to the type of the thermosetting resin composition to be used, but from the viewpoint of sufficiently proceeding the curing reaction and improving the productivity, the curing temperature is preferably 80 to It is 230 degreeC, More preferably, it is 100-200 degreeC, More preferably, it is 140-200 degreeC, Curing time becomes like this. Preferably it is 5-180 minutes, More preferably, it is 10-120 minutes, More preferably, it is 30-80 minutes.
In addition, you may perform this process simultaneously with the process of hardening | curing the said thermosetting resin composition layer (b).
A preferable aspect of the thickness of the insulating layer (A) is the same as the thickness of the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device of the present invention.

<Step (IV)>
Step (IV) is a step of peeling the temporary fixing layer 2 of the member for manufacturing a semiconductor device as shown in FIG. When the support (1) 1 is provided, the support (1) 1 may be peeled before the temporary fixing layer 2 is peeled off or simultaneously with the peeling of the temporary fixing layer 2 (see FIG. 5 (e)).
The peeling method is not particularly limited, but when a heat peeling sheet is used as the temporary fixing layer 2, the peeling can be carried out by, for example, a method of placing and heating on a hot plate set to a predetermined temperature. What is necessary is just to determine the temperature to heat suitably according to the thermal peeling sheet to be used.
In addition, you may perform process (IV) before the said process (III).

<Process (V)>
Step (V) is a step of grinding the insulating layer (A) 5 on the active surface of the semiconductor element 4 to form an opening reaching the active surface of the semiconductor element 4 as shown in FIG. is there.
After grinding, it is preferable to treat with an alkali treatment solution such as a desmear treatment solution or a resist stripping solution. The pH of the alkaline treatment liquid can be adjusted according to the opening diameter.
As the desmear treatment liquid, for example, a mixed liquid such as a sodium permanganate liquid, a sodium hydroxide liquid, a potassium permanganate liquid, a chromium liquid, and sulfuric acid can be used.
In desmear treatment, the substrate to be treated is swelled with hot water, swelling liquid, etc., then the residue is removed with sodium permanganate solution, etc., reduced (neutralized), washed with water, washed with hot water, and dried. I do. If sufficient effects of roughening and residue removal are not obtained even if the treatment is performed once, the treatment may be performed a plurality of times. The desmear process is not limited to the above.
After the desmear treatment, the thermosetting resin composition may be thermally cured again. Although the effect of the second thermosetting varies depending on the thermosetting resin used, for example, it is possible to reduce unreacted materials, improve the glass transition temperature, reduce the thermal expansion, and the like.

<Process (VI)>
Step (VI) is a step of forming a seed layer 7 on the insulating layer (A) 5 as shown in FIG.
The seed layer 7 is a conductive thin film that serves as a base layer when the copper wiring pattern 8 is formed by electroplating, and can be suitably formed by electroless copper plating, sputtering, or the like. When the sputtering method is used, various formation layers can be selected, for example, Ti is deposited before copper is deposited.
The thickness of the seed layer 7 is not particularly limited, but is usually 0.1 to 2.0 μm.

<Process (VII)>
In step (VII), as shown in FIG. 5 (j), a resist for circuit formation is formed on the seed layer 7, and a resist pattern 8 for rewiring is formed by performing exposure processing and development processing. .
As the resist for circuit formation, a known resist material used as a resist for circuit formation can be used, and it may be either liquid or film.
When the resist material is in liquid form, the circuit forming resist can be applied and formed using a printing machine. If the resist material is in the form of a film, it can be formed using a roll laminator, vacuum laminator, etc. can do.
The exposure process is a process of exposing a predetermined portion of the circuit forming resist by irradiating the formed circuit forming resist with an actinic ray through a mask pattern and photocuring the circuit forming resist in the exposed portion. is there. Subsequent to the exposure process, a resist pattern 8 for rewiring can be formed by performing a development process for removing the resist for circuit formation other than the exposed part.
As the light source of the actinic ray in the exposure processing, a known light source can be used. For example, a light source that effectively emits ultraviolet rays, such as a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, and a xenon lamp is preferable. Can be used for Further, direct drawing direct laser exposure may be used.
The amount of exposure varies depending on the apparatus used, the composition of the circuit forming resist, and the like, but is preferably 10 to 600 mJ / cm ² , more preferably 20 to 400 mJ / cm ² . When the exposure amount is 10 mJ / cm ² or more, the progress of photocuring is sufficient and a resist pattern can be stably formed, and when it is 600 mJ / cm ² or less, the photocuring is prevented from proceeding excessively. The opening shape of the circuit forming resist can be obtained stably.
As the developer used for the development process, for example, an alkali developer such as a dilute solution (1 to 5% by mass aqueous solution) of sodium carbonate at 20 to 50 ° C is used. The development method is not particularly limited, and can be performed by a known method such as spraying, rocking immersion, brushing, and scraping using the developer.

<Process (VIII)>
Step (VIII) is a step of forming a wiring pattern 9 on the seed layer 7 by electroplating and removing the resist pattern 8 by a stripping process, as shown in FIG. 6 (k).
The electroplating may be performed by a conventionally known method, and the thickness of the obtained wiring pattern 9 is preferably 1 to 20 μm.
Next, as shown in FIG. 6 (m), the resist pattern 8 is stripped and removed with a stripping solution.

<Process (IX)>
Step (IX) is a step of removing the seed layer 7 exposed on the surface of the insulating layer (A) 5 as shown in FIG. The removal of the seed layer 7 can be performed using a known etching solution.

<Process (X)>
In step (X), an insulating layer (C) 10 is formed on the wiring pattern 9 as shown in FIG. 6 (p), and then the opening reaching the wiring pattern 9 is shown in FIG. 7 (q). It is the process of forming a part.
An insulating layer (C) can be suitably formed using the thermosetting resin composition used for formation of an insulating layer (A), ie, the thermosetting resin composition of this invention. Moreover, the suitable formation method is the same as the formation method of an insulating layer (A).
Moreover, the formation method of the opening part of an insulating layer (C) is the same as the formation method of the opening part in the said process (V).

<Process (XI)>
Step (XI) is a step of forming the external connection terminals 12.
In forming the external connection terminal 12, first, as shown in FIG. 7R, electroless nickel plating and gold plating 11 are performed on the wiring pattern 9 exposed from the opening provided in the insulating layer (C) 10. It is preferable. The thickness of the nickel plating is preferably 1 to 10 μm, and the thickness of the gold plating is preferably 0.01 to 1.0 μm, more preferably 0.05 to 0.15 μm.
Next, as shown in FIG. 7S, a conductive material as the external connection terminal 12 is formed in the opening of the insulating layer (C) 10. The conductive material is not particularly limited, but it is preferable to use Sn-Ag-based, Sn-Ag-Cu-based solder or the like from the viewpoint of environmental conservation. Alternatively, a Cu post may be formed using a circuit forming resist.
Next, the semiconductor device shown in FIG. 7 (t) can be obtained by dicing into pieces using a dicer.

  The preferred embodiments of the semiconductor device manufacturing member according to the present invention and the semiconductor device manufacturing method using the same have been described above, but the present invention is not necessarily limited to the above-described embodiments, and the gist thereof is described. Changes may be made as appropriate without departing from.

[Preparation of support with temporary fixing layer]
First, a SUS plate having a diameter of 220 mm and a thickness of 1.5 mm was prepared as the support (1). Next, a temporary fixing film was attached to one side of the SUS plate using a laminator, a temporary fixing layer was formed on the SUS plate, and a support with a temporary fixing layer was obtained (see FIG. 4A). In addition, about the film for temporary fixing which protruded from the SUS board, it cut away with the cutter knife.

[Production of thermosetting resin composition]
Production Example 1
(Manufacture of thermosetting resin composition A)
In producing the thermosetting resin composition A, a curing agent (A-1) was first prepared.
In a reaction vessel with a volume of 2 liters that can be heated and cooled, equipped with a thermometer, a stirrer, and a moisture meter with a reflux condenser, 26.40 g of bis (4-aminophenyl) sulfone and 2,2-bis [4- (4-Maleimidophenoxy) phenyl] propane (484.50 g), p-aminobenzoic acid (29.10 g) and dimethylacetamide (360.00 g) were added and reacted at 140 ° C. for 5 hours to have a sulfone group in the molecular main chain. Then, a solution of the curing agent (A-1) having an acidic substituent and an unsaturated N-substituted maleimide group was obtained.

Next, 70 parts by mass of a biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name: NC-3000H), 30 parts by mass of the hardener (A-1) obtained above, and vinylsilane 30 parts by mass of silica filler (average particle size: 50 nm) treated with a resin component with respect to 100 parts by mass of the resin component, using a bead mill (trade name: Star Mill LMZ, manufactured by Ashizawa Finetech Co., Ltd.), a peripheral speed of 12 m The solution of thermosetting resin composition A was obtained by dispersing at / s for 3 hours.
The particle size of the silica filler was measured using a laser diffraction scattering type microtrack particle size distribution meter “MT-3100” (manufactured by Nikkiso Co., Ltd.), and the average particle size was 50 nm and the maximum particle size was 1 μm or less. Confirmed that.

Production Example 2
(Production of thermosetting resin composition B)
In producing the thermosetting resin composition B, a curing agent (B-1) was first prepared.
(4,4′-diamino) dicyclohexylmethane (manufactured by Shin Nippon Rika Co., Ltd., trade name: Wandamine HM (WHM)) 52.7 g as a diamine compound, and 3,3′-dihydroxy- as a diamine having a reactive functional group 6 g of 4,4′-diaminobiphenyl, 108 g of trimellitic anhydride as a tricarboxylic anhydride and 1281 g of N-methyl-2-pyrrolidone as an aprotic polar solvent were put in a flask, and the temperature in the flask was set at 80 ° C. Stir for 30 minutes. After completion of the stirring, 192 g of toluene was further added as an aromatic hydrocarbon azeotropic with water, and the temperature in the flask was raised to 160 ° C. and refluxed for 2.5 hours. After confirming that the theoretical amount of water was stored in the moisture determination receiver and that no water distilling was observed, the temperature in the flask was adjusted to 180 ° C. while removing water and toluene in the moisture determination receiver. And toluene in the reaction solution was removed. After cooling the solution in the flask to 60 ° C., hydrogenated α, ω-polybutadiene dicarboxylic acid (manufactured by Nippon Soda Co., Ltd., trade name) as a dicarboxylic acid having a long-chain hydrocarbon chain skeleton (about 50 carbon atoms). CI-1000) 309.5 g was added and stirred for 10 minutes. After completion of the stirring, 119.7 g of 4,4′-diphenylmethane diisocyanate was added as a diisocyanate, the temperature in the flask was raised to 160 ° C. and reacted for 2 hours, and a solution of a curing agent (B-1) was obtained as a polyamideimide resin. A solution was obtained.
The weight average molecular weight (Mw) of this polyamideimide resin was measured by gel permeation chromatography and found to be 47,000. The average reactive functional group number N per polyamideimide molecule was 4.4.

Next, 70 parts by mass of a biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name: NC-3000H), 30 parts by mass of the solidifying agent (B-1) obtained above, and vinylsilane 30 parts by mass of silica filler (average particle size: 50 nm) treated with a resin component with respect to 100 parts by mass of the resin component, using a bead mill (trade name: Star Mill LMZ, manufactured by Ashizawa Finetech Co., Ltd.), a peripheral speed of 12 m The solution of thermosetting resin composition B was obtained by dispersing at / s for 3 hours.
The particle size of the silica filler was measured by the same method as in Example 1, and it was confirmed that the average particle size was 50 nm and the maximum particle size was 1 μm or less.

Production Example 3
<Thermosetting resin composition C>
70 parts by mass of a cresol novolac type epoxy resin (manufactured by DIC Corporation, trade name: Epicron N660), a phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., trade name: YP-55) as a curing agent, a melamine-modified phenol novolac resin (DIC) Co., Ltd., trade name: LA7054 30 parts by mass, barium sulfate (average particle size: 300 nm) 10 parts by mass with respect to 100 parts by mass of resin component, and silica filler treated with vinylsilane (average particle size: 50 nm) 30 parts by mass with respect to 100 parts by mass of the resin component, dispersed for 3 hours at a peripheral speed of 12 m / s using a bead mill (manufactured by Ashizawa Finetech Co., Ltd., product name: Star Mill LMZ), and thermoset. A solution of the conductive resin composition C was obtained.
The particle diameters of the silica filler and barium sulfate were measured by the same method as in Example 1. The average particle diameter of the silica filler was 50 nm, the maximum particle diameter was 1 μm or less, the average particle diameter of barium sulfate was 300 nm, the maximum It was confirmed that the particle size was 2 μm.

[Manufacture of thermosetting resin film]
Production Examples 4 to 10
The solutions of the thermosetting resin compositions A to C obtained in Production Examples 1 to 3 are placed on a PET film (trade name: G2-16, 16 μm thickness, manufactured by Teijin Limited) which is the support (2). the thickness of the thermosetting resin composition layer after drying (a) was applied so that the thickness T ₁ as shown in Table 1. Then, the thermosetting resin film was obtained on the support body (2) by drying for 10 minutes at 100 degreeC using a hot air convection type dryer.
Subsequently, a polyethylene film (manufactured by Tamapoly Co., Ltd., trade name: NF-15) is bonded as a protective film so that dust or the like does not adhere to the thermosetting resin film, and the thermosetting resin films F1 to F1 with a protective film are attached. F7 was obtained.

[Manufacture of semiconductor device manufacturing members]
Production Examples 11-17
The protective films of the thermosetting resin films F-1 to F-7 obtained in Production Examples 4 to 10 are peeled off, and the thermosetting resin film comes into contact with the temporary fixing layer on the above-described support with the temporary fixing layer. Was placed as follows. Subsequently, it laminates on the conditions shown in Table 2 using a press-type vacuum laminator (trade name: MVLP-500, manufactured by Meiki Seisakusho Co., Ltd.), and the thermosetting resin composition layer (a) is placed on the temporary fixing layer. Formed. Thereafter, the PET film as the support (2) is peeled off, and the semiconductor device manufacturing members P-1 to P having the support (1), the temporary fixing layer, and the thermosetting resin composition layer (a) in this order. -7 was obtained.
The press-type vacuum laminator was evacuated for 20 seconds and the atmospheric pressure was 4 kPa or less.

[Manufacture of semiconductor devices]
Examples 1-9
First, as shown in FIG. 4 (c), the semiconductor device of 7.3 mm × 7.3 mm having a thickness _{T 2} shown in Table 3 (Co. Walz Ltd., trade name: CC80-0101JY) a semiconductor device manufacturing On the members P-1 to P-7, the active surface of the semiconductor element and the thermosetting resin composition layer (a) were arranged in a lattice shape so as to contact each other.
The number of mounted semiconductor elements was 193, and the pitch was 9.6 mm in both the vertical and horizontal directions. A die sorter (manufactured by Canon Machinery Co., Ltd., trade name: CAP3500) was used for the arrangement of the semiconductor elements. The load at the time of arrangement was 1 kgf per semiconductor element.

Next, the semiconductor element is covered with a thermosetting resin film made of the same thermosetting resin composition as the thermosetting resin composition used for forming the thermosetting resin composition layer (a). sealed, to form the thermosetting resin composition layer having a thickness T ₃ shown in Table 3 (b). The sealing method is the same as the method for forming the thermosetting resin composition layer (a). Subsequently, thermosetting is performed under the conditions described in Table 3, and the thermosetting resin composition layer (a) and the thermosetting resin composition layer (b) are cured, and an insulating layer (A) and an insulating layer ( B) was formed (see FIG. 4D).

  Then, as shown to FIG.5 (e) and (f), the support body (1) and the temporary fixing layer were peeled on the 200 degreeC hotplate, and the molding was obtained.

Comparative Examples 1-5
As shown in FIG. 1 (b), a 7.3 mm × 7.3 mm semiconductor element (trade name: CC80-0101JY, manufactured by Waltz Co., Ltd.) having the thickness shown in Table 4 is supported with the above-described temporary fixing layer. The active surface of the semiconductor element and the temporary fixing layer were arranged in a lattice shape so as to contact the temporary fixing layer of the body.
The number of mounted semiconductor elements was 193, and the pitch was 9.6 mm in both the vertical and horizontal directions. A die sorter (manufactured by Canon Machinery Co., Ltd., trade name: CAP3500) was used for the arrangement of the semiconductor elements. The load at the time of arrangement was 1 kgf per semiconductor element.
Next, as shown in FIG.1 (c), it consists of the thermosetting resin composition similar to the thermosetting resin composition used for formation of a thermosetting resin composition layer (a) as a sealing material. Using a thermosetting resin film, the semiconductor element was sealed so as to form a sealing material layer having a thickness shown in Table 4. The sealing method is the same as the method for forming the thermosetting resin composition layer (a). Next, thermosetting was performed under the conditions described in Table 4.
Then, as shown to FIG.1 (d) and (e), the support body and the temporary fixing layer were peeled on the 200 degreeC hotplate.
Next, using the same thermosetting resin composition as the thermosetting resin composition used as a sealing material instead of the photosensitive resin composition of FIG. 2 (f), thermosetting under the same conditions, A molded product was obtained by forming an insulating layer having a thickness of 25 μm.

[Evaluation conditions]
The molded products obtained in Examples 1 to 9 were evaluated as follows (1) to (3). Moreover, about the semiconductor device obtained by Comparative Examples 1-5, the curvature of the molded object was evaluated.
(1) Warping of molded product About the obtained molded product, a range of 200 mm in diameter was used at room temperature (25 ° C.) using a high-accuracy three-dimensional shape measurement system (Combs Co., Ltd., trade name: MAP-3D 300XYTAS). It was measured and evaluated based on the following criteria.
○: Warpage amount is less than 1 mm △: Warpage amount is 1 mm or more and less than 2 mm ×: Warpage amount is 2 mm or more

(2) Embeddability The obtained molded product was visually observed and evaluated based on the following criteria.
○: The resin is sufficiently embedded between the semiconductor elements, and there is no unfilled portion.
X: There is an unfilled portion between the semiconductor elements.

(3) Insulating layer (A) surface smoothness About the obtained molded product, the surface of the insulating layer (A) on the active surface side of the semiconductor element was measured with a surface roughness meter (trade name, manufactured by Kosaka Laboratory Ltd.). : Surfcorder SE-2300) was used to measure the level difference and evaluated based on the following criteria.
○: The step on the surface of the insulating layer (A) is less than 2 μm Δ: The step on the surface of the insulating layer (A) is 2 μm or more and less than 5 μm ×: The step on the surface of the insulating layer (A) is 5 μm or more

  The evaluation results are shown in Tables 3 and 4.

  In each of Examples 1 to 9 using the semiconductor device manufacturing member of the present invention, the warpage of the molded product was small, and the embedding property and the smoothness of the insulating layer (A) were excellent. On the other hand, as for Comparative Examples 1-5, the curvature of the molding was large.

  The semiconductor device manufacturing member and the semiconductor device manufacturing method using the same according to the present invention are preferably used for a wafer level semiconductor device, and need to be reduced in size and thickness, such as a package-on-package rewiring process. It can be applied to all semiconductor devices and component-embedded substrates.

1 Support (1)
2 Temporary fixing layer 3 Thermosetting resin composition layer (a)
4 Semiconductor element 5 Insulating layer (A)
6 Insulation layer (B)
7 Seed layer 8 Resist pattern 9 Wiring pattern 10 Insulating layer (C)
11 Electroless nickel / gold plating 12 External connection terminal

Claims (8)

Having at least a temporary fixing layer and a thermosetting resin composition layer (a),
The thermosetting resin composition layer (a) is a resin containing one or more selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, a maximum particle size of 1 μm or less, and an average particle size A member for manufacturing a semiconductor device used for rearrangement of semiconductor elements, which is a layer formed by layering a thermosetting resin composition containing an inorganic filler having a diameter of 50 nm or less,
The thermosetting resin composition layer (a) is a member for manufacturing a semiconductor device in which a semiconductor element is rearranged on one surface and a rewiring is formed on the other surface. .   The member for manufacturing a semiconductor device according to claim 1, comprising at least a support (1), a temporary fixing layer, and a thermosetting resin composition layer (a) in this order. The member for manufacturing a semiconductor device according to claim 1 or 2, wherein a thickness T _{1 of the} thermosetting resin composition layer (a) is 2 to 120 µm.   The member for manufacturing a semiconductor device according to claim 1, wherein the inorganic filler is silica. A method for manufacturing a semiconductor device, comprising the following steps (I) to (XI).
(I) On the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device according to any one of claims 1 to 4, one or more semiconductor elements are disposed on the active surface of the semiconductor element and heat. Step (II) of rearranging the curable resin composition layer (a) so as to come into contact with the curable resin composition layer (a), wherein the passive surface of the one or more semiconductor elements is sealed with a sealing resin composition, Step (III) of forming an insulating layer (B) covering the insulating layer (A) obtained by curing the thermosetting resin composition layer (a) and curing the thermosetting resin composition layer (a) Step of forming (IV) Step of peeling off the temporary fixing layer of the semiconductor device manufacturing member (V) Step of grinding the insulating layer (A) to form an opening reaching the active surface of the semiconductor element (VI) Insulation Step of forming a seed layer on the layer (A) (VII) Forming a circuit forming resist on the seed layer, and exposing A step of forming a resist pattern for rewiring by performing processing and development processing (VIII) A step of removing the resist pattern by a stripping treatment after forming a wiring pattern by electroplating (IX) A step of removing the seed layer Step (X) Forming an insulating layer (C) on the wiring pattern and then forming an opening reaching the wiring pattern (XI) Forming an external connection terminal It is a thermosetting resin composition used for the member for semiconductor device manufacture according to any one of claims 1 to 4,
A resin containing one or more selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, and an inorganic filler having a maximum particle size of 1 μm or less and an average particle size of 50 nm or less A thermosetting resin composition to contain.   It uses for manufacture of the member for semiconductor device manufacture of any one of Claims 1-4 obtained by apply | coating and drying on a support body (2) the thermosetting resin composition of Claim 6. A thermosetting resin film.   A semiconductor device comprising the thermosetting resin film according to claim 7.