TWI820004B - resin composition - Google Patents

Abstract

An object of the present invention is to provide a resin composition that suppresses warpage and is excellent in strength and adhesion; a resin sheet, a circuit board, and a semiconductor chip package using the composition. The solution of the present invention relates to an elastomer containing (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) carbon dioxide. Resin compositions of imine compounds, etc.

Description

resin composition

[0001] The present invention relates to a resin composition. Furthermore, it relates to resin sheets, circuit substrates and semiconductor chip packages using resin compositions.

[0002] In recent years, the demand for small high-performance electronic devices such as smart phones and tablet PCs has increased. With this, the insulating materials (insulating layers) for semiconductor packages used in these small electronic devices are also seeking higher quality. Functionalization. For example, the insulating layer for mold sealing used in the fan-out type wafer level package (Wafer Level Package) seeks to suppress warpage and provide sufficient strength when peeling off the resin wafer from the temporary fixing tape. Strength and sufficient adhesion to the insulating layer for rewiring (such as silicon nitride or polyimide, etc.). In addition, the insulating layer used in a wiring board having an embedded wiring layer requires suppression of warpage, sufficient strength when the core substrate is peeled off, and sufficient adhesion to copper. Patent Document 1 discloses a thermosetting resin composition containing a specific linear modified polyimide resin and a thermosetting resin as a low elastic modulus thermosetting resin composition. However, from the viewpoint of compatibility with other resins, the insulating material with such a low elastic modulus has not yet reached the design limit of the resin composition to satisfy the required characteristics. This is the current situation. [Prior Art Document] [Patent Document] [0003] [Patent Document 1] Japanese Patent Application Publication No. 2006-37083

[Problems to be Solved by the Invention] [0004] The present invention is accomplished by solving the above problems, and provides a resin composition that suppresses warpage and has excellent strength and adhesion, a resin sheet, a circuit board, and a semiconductor using the resin composition. Chip packaging. [Means for Solving the Problems] The inventors of the present invention have discovered that an elastomer containing (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, and (d) The resin composition of a phenoxy resin and (e) a carbodiimide compound suppresses warpage and is excellent in strength and adhesion, and finally the present invention is completed. [0006] That is, the present invention includes the following contents. [1] A resin composition containing (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, (d) phenoxy resin, and (e) ) carbodiimide compounds. [2] The resin composition according to [1], wherein the content of component (c) is 75 to 95 mass %, assuming that the non-volatile content of the resin composition is 100 mass %. [3] The resin composition as described in [1] or [2], wherein the content of component (a) is 100% by mass of the non-volatile content of the resin composition excluding component (c), It is 30 mass % to 85 mass %. [4] The resin composition according to any one of [1] to [3], wherein the cured product obtained by thermally curing the resin composition at 180°C for 1 hour has an elastic modulus of 8 GPa or more at 23°C. [5] The resin composition according to any one of [1] to [4], wherein the component (a) is a resin having a structure represented by formula (1-a) and a structure represented by formula (1-b) , [In the formula, R1 represents the residue obtained by removing the hydroxyl group of the polycarbonate diol, R2 represents the residue obtained by removing the carboxyl group or acid anhydride group of the polybasic acid or its anhydride, and R3 represents the residue obtained by removing the isocyanate group of the diisocyanate compound. ]. [6] The resin composition according to any one of [1] to [5], wherein the component (a) has a functional group capable of reacting with the component (b). [7] The resin composition according to any one of [1] to [6], wherein the component (a) has a phenolic hydroxyl group. [8] The resin composition according to any one of [1] to [7], further comprising (f) a curing agent, and the curing agent is at least one selected from the group consisting of phenolic curing agents. [9] The resin composition according to any one of [1] to [8], which is a resin composition for an insulating layer of a semiconductor chip package. [10] A resin sheet having a support and a resin composition layer, the resin composition layer including the resin composition described in any one of [1] to [9] provided on the support . [11] The resin sheet as described in [10], which is a resin sheet for an insulating layer of a semiconductor chip package. [12] A circuit board including an insulating layer formed of a cured product of the resin composition according to any one of [1] to [9]. [13] A semiconductor chip package in which a semiconductor chip is mounted on the circuit substrate as described in [12]. [14] A semiconductor chip package including the resin composition according to any one of [1] to [9], or a semiconductor chip sealed by the resin sheet according to [10]. [Effects of the Invention] According to the present invention, it is possible to provide a resin composition that obtains a cured product (insulating layer) that suppresses warpage and has excellent strength and adhesion; resin sheets, circuit boards and semiconductors using the composition Chip packaging.

[0008] Hereinafter, the resin composition, resin sheet, circuit substrate and semiconductor chip package of the present invention will be described in detail. [Resin composition] The resin composition of the present invention may include (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, (d) phenoxy base resin and (e) carbodiimide compound. If necessary, (f) hardener, (g) hardening accelerator and (h) flame retardant may be further included. Each component contained in the resin composition will be described in detail below. <(a) Elastomer having a polycarbonate structure in the molecule> The resin composition of the present invention contains (a) an elastomer having a polycarbonate structure in the molecule. By containing a soft resin such as component (a), an insulating layer with excellent insulation reliability, suppressed warping, and low linear thermal expansion coefficient can be obtained. In the present invention, the elastomer is preferably a resin having rubber elasticity, or a resin that is polymerized or solidified to exhibit rubber elasticity. As the rubber elasticity, for example, in accordance with Japanese Industrial Standards (JIS K7161), when a tensile test is performed at a temperature of 25° C. and a humidity of 40% RH, a resin showing an elastic modulus of 1 GPa or less is preferred. From the viewpoint of suppressing warpage, the elastomer of the component (a) is preferably at least one selected from the group consisting of resins with a glass transition temperature (Tg) of 25°C or less and resins that are liquid at 25°C. of resin. [0012] The glass transition temperature of the resin having a glass transition temperature (Tg) of 25°C or lower is preferably 20°C or lower, more preferably 15°C or lower. The lower limit of the glass transition temperature is not particularly limited, but it can usually be -15°C or higher. Moreover, as a resin which is liquid at 25 degreeC, resin which is liquid at 20 degreeC or less is preferable, and resin which is liquid at 15 degreeC or less is more preferable. As a suitable embodiment of the component (a), there is a structure represented by the formula (1-a) (urethane and polycarbonate structure), which may be referred to as "structure (1-a)" below. ) and a resin having a structure represented by formula (1-b) (imide structure may be referred to as "structure (1-b)" below). [0014] [In the formula, R1 represents the residue that removes the hydroxyl group of the polycarbonate diol, R2 represents the residue that removes the carboxyl group or acid anhydride group of the polybasic acid or its anhydride, and R3 represents the residue that removes the isocyanate group of the diisocyanate compound. residue]. However, the end of the above chemical formula is not a methyl group but represents the bonding position. Other chemical formulas are also the same. The number average molecular weight of the polycarbonate diol is preferably 500 to 5,000, more preferably from the viewpoint of the flexibility of the cured product of the resin composition and the solvent solubility of the component (A). It is 1,000~3,000. The hydroxyl equivalent of the polycarbonate diol is preferably 250 to 1,250, more preferably 500 to 1,000, from the viewpoint of flexibility of the cured resin composition and chemical resistance. As the diisocyanate compound, for example, aromatic diisocyanates such as toluene-2,4-diisocyanate, toluene-2,6-diisocyanate, xylylene diisocyanate, diphenylmethane diisocyanate, etc. can be cited; Aliphatic diisocyanates such as hexamethylene diisocyanate; alicyclic diisocyanates such as isophorone diisocyanate. Among these, aromatic diisocyanate is preferred, and toluene-2,4-diisocyanate is more preferred. Examples of the aforementioned polybasic acid or anhydride thereof include pyromellitic acid, benzophenonetetracarboxylic acid, biphenyltetracarboxylic acid, naphthalenetetracarboxylic acid, and 5-(2,5-dioxotetrahydrofuranyl) -Tetrabasic acids such as 3-methyl-cyclohexene-1,2-dicarboxylic acid, 3,3'-4,4'-diphenyltetracarboxylic acid and their anhydrides, trimellitic acid , tribasic acids such as cyclohexanetricarboxylic acid and their anhydrides, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furan base)-naphtho(1,2-C)furan-1,3-dione, etc. Among these, tetrabasic acid anhydride is preferable, tetrabasic acid dianhydride is more preferable, and benzophenone tetracarboxylic dianhydride is still more preferable. R1 is preferably a divalent base represented by formula (1-c), [In the formula, k+1 R4 each independently represents an alkylene group having 1 to 20 carbon atoms which may have a substituent, and k represents an integer of 5 to 30]. The alkylene group of R4 can be linear or branched. Examples of the substituent that the alkylene group of R4 may have include a halogen atom, a cycloalkyl group having 4 to 8 carbon atoms, and an aryl group having 6 to 14 carbon atoms. The alkylene group of R4 is preferably unsubstituted. [0022] Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Examples of the cycloalkyl group having 4 to 8 carbon atoms include cyclopentyl, cyclohexyl, and cycloheptyl. Examples of the aryl group having 6 to 14 carbon atoms include phenyl, 1-naphthyl, 2-naphthyl, 1-oncyl, 2-oncyl, and 9-oncyl. The k+1 R4 are each independently, preferably an alkylene group with 1 to 20 carbon atoms, more preferably an alkylene group with 2 to 18 carbon atoms, and still more preferably an alkylene group with 3 to 16 carbon atoms. alkyl. k is preferably an integer from 5 to 25, more preferably an integer from 5 to 20. R2 is preferably at least one selected from the group of tetravalent groups represented by any one of the following formulas, [0025] [In the formula, A represents an oxygen atom, a sulfur atom, CO, SO, SO ₂ , CH ₂ , CH(CH ₃ ), C(CH ₃ ) ₂ , C(CF ₃ ) ₂ , or C(CCl ₃ ) ₂ . In the formula, the hydrogen atom bonded to the carbon atom can be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms]. Among the R2 (tetravalent radicals) represented by the above formula, it is preferably a tetravalent radical having an aromatic ring, more preferably a tetravalent radical having two or more aromatic rings, and most preferably a tetravalent radical represented by the following formula base, [0028] [In the formula, A represents oxygen atom, sulfur atom, CO, SO, SO ₂ , CH ₂ , CH(CH ₃ ), C(CH ₃ ) ₂ , C(CF ₃ ) ₂ , or C(CCl ₃ ) ₂ . In the formula, the hydrogen atom bonded to the carbon atom can be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms]. A is preferably CO. The hydrogen atom bonded to the carbon atom in the above formula (that is, the hydrogen atom bonded to the carbon atom in the tetravalent group of R) can be selected from the group consisting of halogen atoms and alkyl groups with 1 to 8 carbon atoms. substituted by substituents. The hydrogen atom is preferably unsubstituted. [0032] Examples of the halogen atom include those mentioned above. The alkyl group may be linear or branched. Examples of the alkyl group having 1 to 8 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, Neopentyl, 1-ethylpropyl, hexyl, isohexyl, 1,1-dimethylbutyl, 2,2-dimethylbutyl, 3,3-dimethylbutyl, 2-ethyl Butyl, heptyl, octyl. R3 is preferably at least one selected from the group of divalent groups represented by any one of the following formulas, [0034] [In the formula, the hydrogen atom bonded to the carbon atom can be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms]. However, the end of the above formula is not a methyl group but represents the bonding position. For example, the last part of the above formula is not octane, but represents hexamethylene. The hydrogen atom bonded to the carbon atom in the above formula (that is, the hydrogen atom bonded to the carbon atom in the divalent group of R) can be selected from the group consisting of halogen atoms and alkyl groups with 1 to 8 carbon atoms. Substituted with a substituent (preferably an alkyl group having 1 to 8 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and most preferably a methyl group). Examples of the halogen atom and the alkyl group having 1 to 8 carbon atoms include the above. Examples of the alkyl group having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, Neopentyl, 1-ethylpropyl, hexyl, isohexyl, 1,1-dimethylbutyl, 2,2-dimethylbutyl, 3,3-dimethylbutyl, 2-ethyl butyl. Among R3 (divalent group) represented by the above formula, a divalent group having an aromatic ring or an alicyclic ring is preferred, and a divalent organic group having an alicyclic ring is more preferred. In the case of a divalent group having an aromatic ring, it is preferably a divalent group represented by any of the following formulas, [0039] [In the formula, the hydrogen atom bonded to the carbon atom can be replaced with an alkyl group having 1 to 8 carbon atoms (preferably an alkyl group with 1 to 6 carbon atoms, more preferably a methyl group)]. Particularly preferred is 4-methyl-1,3-phenylene (that is, the residue obtained by removing the isocyanate group of toluene-2,4-diisocyanate). [0041] As component (a), it is preferred to have a functional group capable of reacting with component (b) described below. In a suitable embodiment, the functional group that can react with component (b) is selected from hydroxyl (more preferably phenolic hydroxyl), carboxyl, anhydride group, amine group, epoxy group, isocyanate group and One or more functional groups in the group consisting of urethane groups. Among these, the functional group is preferably a hydroxyl group, an acid anhydride group, an epoxy group, or an isocyanate group, and more preferably a hydroxyl group, an acid anhydride group, or an epoxy group. [0043] The number average molecular weight (Mn) is preferably 1,000 to 100,000, more preferably 5,000 to 50,000, more preferably 7,500 to 30,000, still more preferably 10,000 to 15,000. Here, the number average molecular weight (Mn) of the resin is the number average molecular weight in terms of polystyrene measured using GPC (gel permeation chromatography). [0044] The functional group equivalent when having a functional group is preferably 100 to 10,000, more preferably 200 to 5,000. However, the so-called functional group equivalent refers to the number of grams of resin containing 1 gram equivalent of functional group. For example, the epoxy group equivalent can be measured in accordance with JIS K7236. The hydroxyl equivalent weight can be calculated by dividing the hydroxyl value measured in accordance with JIS K1557-1 by the molecular weight of KOH. As a suitable embodiment of the component (a), a polycarbonate resin having a glass transition temperature of 25° C. or less is preferably selected from a polycarbonate resin containing hydroxyl groups (more preferably a polycarbonate resin containing phenolic Polycarbonate resin containing hydroxyl group), polycarbonate resin containing carboxyl group, polycarbonate resin containing anhydride group, polycarbonate resin containing epoxy group, polycarbonate resin containing isocyanate group and polycarbonate resin containing urethane group One or more resins in the group consisting of polycarbonate resins. Here, "polycarbonate resin" refers to a resin containing a polycarbonate structure. In these resins, the polycarbonate structure may be included in the main chain or in the side chain. From the viewpoint of imparting flexibility, the content of component (a) in the resin composition is preferably 85% when the non-volatile content of the resin composition excluding component (c) is 100% by mass. Mass% or less, more preferably 80 mass% or less, still more preferably 75 mass% or less, still more preferably 73 mass% or less. Moreover, the lower limit is preferably 30 mass% or more, more preferably 35 mass% or more, still more preferably 45 mass% or more, and still more preferably 55 mass% or more. <(b) Epoxy resin> The resin composition contains an epoxy resin. Examples of the epoxy resin include bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, bisphenol AF-type epoxy resin, dicyclopentadiene-type epoxy resin, and bisphenol S-type epoxy resin. Phenolic epoxy resin, naphthol novolak type epoxy resin, phenol novolak type epoxy resin, alicyclic epoxy resin with ester skeleton, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin Oxygen resin, naphthol type epoxy resin, onion type epoxy resin, glycidyl amine type epoxy resin, glycidyl ester type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, linear Aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, epoxy resin containing spiro ring, cyclohexane dimethanol type epoxy resin, naphthalene Ether type epoxy resin, trimethylol type epoxy resin, tetraphenylethane type epoxy resin, etc. One type of epoxy resin can be used alone, or two or more types can be used in combination. [0048] The epoxy resin is preferably an epoxy resin containing two or more epoxy groups per molecule. When the non-volatile content of the epoxy resin is defined as 100% by mass, it is preferable that at least 50% by mass or more is an epoxy resin having two or more epoxy groups per molecule. Among them, preferred ones include an epoxy resin that has two or more epoxy groups in one molecule and is liquid at a temperature of 20° C. (hereinafter referred to as "liquid epoxy resin"), and one that has three or more epoxy groups in one molecule. An epoxy resin that has more than epoxy groups and is solid at a temperature of 20°C (hereinafter referred to as "solid epoxy resin"). As the epoxy resin, a resin composition having excellent flexibility is obtained by using a liquid epoxy resin and a solid epoxy resin in combination. In addition, the fracture strength of the cured product of the resin composition is also improved. As the liquid epoxy resin, preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, and glycidol with aromatic structure Ester type epoxy resin, glycidyl amine type epoxy resin with aromatic structure, phenolic novolak type epoxy resin, alicyclic epoxy resin with aromatic structure and ester skeleton, ring with aromatic structure Hexane dimethanol type epoxy resin and epoxy resin with aromatic structure butadiene structure, preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin and Naphthalene type epoxy resin, more preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin. Specific examples of liquid epoxy resins include "HP4032", "HP4032D", and "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation, and "828US" and "jER828EL" (bisphenol resin) manufactured by Mitsubishi Chemical Corporation. A type epoxy resin), "JER806", "jER807" (bisphenol F type epoxy resin), "jER152" (phenolic novolak type epoxy resin), "630", "630LSD" (aminophenol type epoxy resin) Oxygen resin), "ZX1059" made by Nippon Steel & Sumitomo Metal Chemical Co., Ltd. (a mixture of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin), "EX-721" (glycidyl ester) made by Nagase ChemteX Co., Ltd. type epoxy resin), "Celoxide2021P" made by Daicel Co., Ltd. (alicyclic epoxy resin with an ester skeleton), "ZX1658" and "ZX1658GS" made by Nippon Steel Chemical Co., Ltd. (liquid 1,4-glycidyl ring hexane). These may be used individually by 1 type, and may be used in combination of 2 or more types. The content of the liquid epoxy resin in the resin composition is preferably 1 from the perspective of improving the compatibility of the component (a) when the non-volatile component in the resin composition is 100% by mass. % by mass or more, more preferably 2 mass % or more, still more preferably 2.5 mass % or more. The upper limit of the epoxy resin content is not particularly limited as long as the effect of the present invention can be exerted. However, it is preferably 15 mass% or less, more preferably 10 mass% or less, and still more preferably 5 mass% or less. [0051] The epoxy equivalent of the liquid epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, and still more preferably 110 to 1000. By reaching this range, the cross-linking density of the cured product of the resin composition becomes sufficient, and when the cured product is used as an insulating layer, an insulating layer with smaller surface roughness can be provided. However, the epoxy equivalent of liquid epoxy resin can be measured according to JIS K7236 and is the mass of the resin containing 1 equivalent of epoxy groups. [0052] The weight average molecular weight of the liquid epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and even more preferably 400 to 1500. Here, the weight average molecular weight of the liquid epoxy resin is the weight average molecular weight in terms of polystyrene measured by the gel permeation chromatography (GPC) method. As solid epoxy resin, preferred are naphthalene-type 4-functional epoxy resin, cresol novolak-type epoxy resin, dicyclopentadiene-type epoxy resin with aromatic structure, and phenol-type epoxy resin. , naphthol type epoxy resin, biphenyl type epoxy resin, naphthyl ether type epoxy resin, onion type epoxy resin, bisphenol A type epoxy resin, bisphenol AF type epoxy resin, tetraphenylethane type epoxy resin, more preferably naphthalene-type 4-functional epoxy resin, naphthol-type epoxy resin and biphenyl-type epoxy resin, naphthyl ether-type epoxy resin, more preferably naphthalene-type 4-functional epoxy resin, Naphthyl ether type epoxy resin. Specific examples of solid epoxy resins include "HP4032H" (naphthalene type epoxy resin), "HP-4700", "HP-4710" (naphthalene type tetrafunctional epoxy resin), and "N -690" (cresol novolak type epoxy resin), "N-695" (cresol novolak type epoxy resin), "HP-7200", "HP-7200L", "HP-7200HH", "HP -7200H", "HP-7200HHH" (dicyclopentadiene type epoxy resin), "EXA7311", "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", "HP6000" (dicyclopentadiene type epoxy resin) Epoxy resin), "EPPN-502H" (ginseng phenol type epoxy resin), "NC7000L" (naphthol novolak type epoxy resin), "NC3000H", "NC3000", "NC3000L" manufactured by Nippon Kayaku Co., Ltd. , "NC3100" (biphenyl type epoxy resin), "ESN475V" (naphthol type epoxy resin) manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., "ESN485" (naphthol novolac type epoxy resin), Mitsubishi Chemical Corporation Made of "YX4000H", "YL6121" (biphenyl type epoxy resin), "YX4000HK" (xylenol type epoxy resin), "YL7760" (bisphenol AF type epoxy resin), "YX8800" (onion type Epoxy resin), "PG-100" and "CG-500" made by Osaka Gas Chemicals Co., Ltd., "YL7800" made by Mitsubishi Chemical Co., Ltd. (N-type epoxy resin), "jER1010" made by Mitsubishi Chemical Co., Ltd. (solid Bisphenol A type epoxy resin), "jER1031S" (tetraphenylethane type epoxy resin), "157S70" (bisphenol novolak type epoxy resin), Mitsubishi Chemical Corporation's "YX4000HK" (xylenol type epoxy resin), "YX8800" (onion type epoxy resin), "PG-100" and "CG-500" made by Osaka Gas Chemicals Co., Ltd., "YL7800" (green type epoxy resin) made by Mitsubishi Chemical Corporation , "jER1031S" (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation, etc. These may be used individually by 1 type, and may be used in combination of 2 or more types. [0054] The content of the solid epoxy resin in the resin composition is preferably 0.1 mass% or more from the perspective of adjusting the viscosity of the resin composition when the non-volatile components in the resin composition are set to 100% by mass. , more preferably 0.2 mass% or more, still more preferably 0.3 mass% or more. The upper limit of the epoxy resin content is not particularly limited as long as the effect of the present invention can be exerted. However, it is preferably 10 mass% or less, more preferably 5 mass% or less, and still more preferably 1 mass% or less. [0055] The epoxy equivalent of the solid epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, and still more preferably 110 to 1000. By entering this range, the cross-linking density of the hardened material becomes sufficient, and an insulating layer with smaller surface roughness can be produced. Furthermore, the epoxy equivalent of solid epoxy resin can be measured according to JIS K7236 and is the mass of the resin containing 1 equivalent of epoxy groups. [0056] The weight average molecular weight of the solid epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. Here, the weight average molecular weight of the solid epoxy resin is the weight average molecular weight in terms of polystyrene measured by the gel permeation chromatography (GPC) method. When the content of the liquid epoxy resin is set as B1 (mass %) and the content of the solid epoxy resin is set as B2 (mass %), from the perspective of adjusting the melt viscosity, it is preferable to satisfy B1> B2 relationship. Moreover, the difference (B1-B2) between B1 and B2 is preferably 0.1 mass% or more, more preferably 0.2 mass% or more, still more preferably 0.3 mass% or more, 0.5 mass% or more, or 1 mass% or more. Although the upper limit of the difference (B1-B2) is not particularly limited, it can usually be 10 mass% or less, 5 mass% or less, etc. [0058] The mass ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin/liquid epoxy resin) is preferably in the range of 0.01 to 1. By setting the ratio of liquid epoxy resin to solid epoxy resin within this range, i) moderate adhesion can be obtained when used in the form of a resin sheet, ii) sufficient adhesion can be obtained when used in the form of a resin sheet. The flexibility improves operability and iii) can obtain a hardened material with sufficient breaking strength. From the viewpoint of the effects of i) to iii) above, the mass ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin/liquid epoxy resin) is more preferably 0.05 to The range is 0.8, and more preferably the range is 0.1~0.5. [0059] <(c) Inorganic filler> The resin composition contains (c) an inorganic filler. The material of the inorganic filler is not particularly limited, but examples include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, Boehmite, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate , bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate and zirconium tungstate phosphate, etc. Among these, silicon dioxide or alumina is suitable, and silicon dioxide is particularly suitable. Moreover, as silica, spherical silica is preferable. One type of inorganic filler can be used alone, or two or more types can be used in combination. The average particle size of the inorganic filler is preferably 5 μm or less, more preferably 2.5 μm or less, and still more preferably 2.2 μm or less, from the perspective of improving circuit embedding properties and obtaining an insulating layer with low surface roughness. , preferably 2 μm or less. Although the lower limit of the average particle diameter is not particularly limited, it is preferably 0.01 μm or more, more preferably 0.05 μm or more, and still more preferably 0.1 μm or more. Examples of commercially available inorganic fillers having such an average particle diameter include "YC100C", "YA050C", "YA050C-MJE", and "YA010C" manufactured by Admatechs, and "UFP-30" manufactured by Denki Chemical Industry Co., Ltd. , "Sifil NSS-3N", "Sifil NSS-4N", "Sifil NSS-5N" made by Tokuyama Co., Ltd., "SC2500SQ" made by Admatechs Co., Ltd., "SO-C6", "SO-C4", "SO-C2" , "SO-C1", etc. [0061] The average particle size of the inorganic filler can be measured by laser diffraction and scattering according to the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler is prepared on a volume basis using a laser diffraction scattering particle size distribution measuring device, and its median diameter can be measured as the average particle diameter. For the measurement sample, it is preferable to use one in which the inorganic filler is dispersed in water by ultrasonic waves. As a laser diffraction scattering particle size distribution measuring device, "LA-500" manufactured by Horiba Manufacturing Co., Ltd., etc. can be used. From the viewpoint of improving moisture resistance and dispersibility, the inorganic filler is preferably an aminosilane coupling agent, an epoxysilane coupling agent, a mercaptosilane coupling agent, a silane coupling agent, or an alkoxy coupling agent. Treat with one or more surface treatment agents such as silane compounds, organosilazane compounds, and titanate coupling agents. Examples of commercially available surface treatment agents include "KBM403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. and "KBM803" (3-mercaptopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. Oxysilane), "KBE903" (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. Silane), "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM103" (phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM-4803" manufactured by Shin-Etsu Chemical Industries, Ltd. (Long chain epoxy silane coupling agent) etc. [0063] The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler material. From the viewpoint of improving the dispersibility of the inorganic filler, the amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg/m ² or more, more preferably 0.1 mg/m ² or more, and still more preferably 0.2 mg/m ² or more. In addition, from the viewpoint of preventing an increase in the melt viscosity of the resin varnish or the melt viscosity in the form of flakes, it is preferably 1 mg/m ² or less, more preferably 0.8 mg/m ² or less, and still more preferably 0.5 mg/m ² the following. [0064] The amount of carbon per unit surface area of each inorganic filler material can be measured after the surface-treated inorganic filler material is washed with a solvent (such as methyl ethyl ketone (MEK)). Specifically, as a solvent, a sufficient amount of MEK is added to the inorganic filler surface-treated with a surface treatment agent, and then ultrasonic cleaning is performed at 25° C. for 5 minutes. After removing the supernatant and drying the solid content, a carbon analyzer can be used to measure the amount of carbon per unit surface area of each inorganic filler material. As a carbon analyzer, "EMIA-320V" manufactured by Horiba Manufacturing Co., Ltd., etc. can be used. [0065] The content of the inorganic filler in the resin composition is preferably 75% by mass to 95% by mass. The content is preferably 78 mass% or more, more preferably 80 mass% or more, and still more preferably 83 mass% or more. The upper limit is preferably 90 mass % or less from the viewpoint of the mechanical strength of the insulating layer, especially from the perspective of elongation. <(d) Phenoxy resin> The resin composition of the present invention contains a phenoxy resin as the (d) component. From the viewpoint of obtaining an insulating layer with good mechanical strength, the weight average molecular weight of the phenoxy resin is preferably 10,000 or more, more preferably 15,000 or more, still more preferably 20,000 or more, and still more preferably 25,000 or more Or more than 30,000. From the viewpoint of obtaining good compatibility, the upper limit of the weight average molecular weight of the thermoplastic resin is preferably 200,000 or less, more preferably 180,000 or less, still more preferably 160,000 or less, still more preferably 150,000 or less. The weight average molecular weight of the thermoplastic resin can be measured, for example, by gel permeation chromatography (GPC). Specifically, the weight average molecular weight (polystyrene conversion) of the thermoplastic resin can be measured using LC-9A/RID-6A manufactured by Shimadzu Corporation, and Shodex K-800P/K-804L manufactured by Showa Denko Corporation. /K-804L is used as the column, chloroform etc. is used as the mobile phase, the column temperature is measured at 40°C, and the calibration curve of the standard polystyrene is used to calculate. [0068] The combination of (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, and (e) a carbodiimide compound provides strength and adhesion. From the viewpoint of properties, especially from the viewpoint of obtaining excellent adhesion, the thermoplastic resin preferably has one or more atoms selected from the group consisting of oxygen atoms, nitrogen atoms and sulfur atoms or contains carbon-carbon. Functional group of double bond. Examples of the functional group include a hydroxyl group, a carboxyl group, an acid anhydride group, an epoxy group, an amine group, a thiol group, an enol group, an enamine group, a urea group, a cyanate group, an isocyanate group, and a thiisocyanate group. One or more types from the group consisting of diimide group, alkenyl group, allenyl group and ketene group. As the acid anhydride group, a carboxylic acid anhydride group is preferred. Suitable examples of the alkenyl group include vinyl group, allyl group, and styrene group. By using a thermoplastic resin having this functional group, the glass transition temperature of the resulting insulating layer tends to increase, and an insulating layer showing good heat resistance can be realized. When the thermoplastic resin contains this functional group, the functional group equivalent of the thermoplastic resin is preferably 100,000 or less, more preferably 90,000 or less, 80,000 or less, 70,000 or less, 60,000 or less, 50,000 or less, 40,000 or less, 30,000 or less, 20,000 or less, 10,000 Below, below 8000, below 6000 or below 5000. The lower limit of the functional group equivalent is not particularly limited, but usually it can be 50 or more, 100 or more, etc. Examples of phenoxy resins include those having a structure selected from a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a bisphenol acetophenone skeleton, a novolak skeleton, a biphenyl skeleton, a fluorine skeleton, and a dicyclopentane skeleton. Phenoxy resin with one or more skeletons in the group consisting of diene skeleton, norbornene skeleton, naphthalene skeleton, allium skeleton, adamantane skeleton, terpene skeleton and trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. Specific examples of phenoxy resins include "1256" and "4250" manufactured by Mitsubishi Chemical Co., Ltd. (both phenoxy resins containing a bisphenol A skeleton), and "YX8100" (a phenoxy resin containing a bisphenol S skeleton). Phenoxy resin) and "YX6954" (phenoxy resin containing a bisphenol acetophenone skeleton). Others include "FX280" and "FX293" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., Mitsubishi Chemical ( "YL7553", "YL6794", "YL7213", "YL7290" and "YL7482", etc. <(e) Carbodiimide compound> The resin composition of the present invention contains a carbodiimide compound as the (e) component. The carbodiimide compound is a compound having one or more carbodiimide groups (-N=C=N-) in one molecule, and has a polycarbonate structure in the molecule by combining with the above (a) The combination of elastomer, (b) epoxy resin, (c) inorganic filler and (d) phenoxy resin can provide an insulating layer with excellent strength and adhesion. As the carbodiimide compound, a compound having two or more carbodiimide groups per molecule is preferred. A carbodiimide compound may be used individually by 1 type, and may be used in combination of 2 or more types. In one embodiment, the carbodiimide compound contained in the resin composition of the present invention contains a structural unit represented by the following formula (2). [0073] (In formula (2), X represents an alkylene group, cycloalkylene group or aryl group, which may have a substituent; p represents an integer from 1 to 5; when They can be the same or different; * represents the bonding part).

The number of carbon atoms of the alkylene group represented by The number of carbon atoms does not include the number of carbon atoms of the substituent. Suitable examples of the alkylene group include methylene, ethylene, propylene, and butylene.

The number of carbon atoms of the cycloalkylene group represented by X is preferably 3 to 20, more preferably 3 to 12, and still more preferably 3 to 6. The number of carbon atoms does not include the number of carbon atoms of the substituent. Suitable examples of the cycloalkylene group include cyclopropyl group, cyclobutyl group, cyclopentyl group and cyclohexyl group.

The aryl group represented by X is a group obtained by removing two hydrogen atoms on the aromatic ring from an aromatic hydrocarbon. The number of carbon atoms of the aryl group is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The number of carbon atoms does not include the number of carbon atoms of the substituent. Suitable examples of the aryl group include phenylene group, naphthylene group, and anthracenyl group.

In combination with (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, and (d) phenoxy resin, it is possible to achieve greater strength and adhesion. From the viewpoint of an excellent insulating layer, it is preferable that X is an alkylene group or a cycloalkylene group, which may have a substituent.

The alkylene group, cycloalkylene group or aryl group represented by X may have a substituent. Although the substituent is not particularly limited, examples thereof include a halogen atom, an alkyl group, an alkoxy group, a cycloalkyl group, a cycloalkoxy group, an aryl group, an aryloxy group, a hydroxyl group, and a hydroxyl group. Examples of the halogen atom used as the substituent include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkyl group and alkoxy group used as the substituent can be either linear or branched. The number of carbon atoms is preferably 1 to 20, more preferably 1 to 10, and even more preferably 1 to 6, 1 ~4. Or 1~3. The number of carbon atoms of the cycloalkyl group and cycloalkoxy group used as the substituent is preferably 3 to 20, more preferably 3 to 12, and still more preferably 3 to 6. The aryl group used as a substituent is a group obtained by removing one hydrogen atom on an aromatic ring from an aromatic hydrocarbon. The number of carbon atoms is preferably 6 to 24, more preferably 6 to 18, and still more preferably 6 to 14. , and even better is 6~10. The number of carbon atoms of the aryloxy group used as a substituent is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The acyl group used as a substituent refers to a group represented by the formula: -C(=O)-R1 (in the formula, R1 represents an alkyl group or an aryl group). The alkyl group represented by R1 can be either linear or branched, and its carbon number is preferably 1 to 20, more preferably 1 to 10, and even more preferably 1 to 6, 1 to 4, or 1~ 3. The number of carbon atoms of the aryl group represented by R1 is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The acyloxy group used as a substituent refers to a group represented by the formula: -O-C(=O)-R1 (in the formula, R1 represents the same meaning as above). Among them, as the substituent, an alkyl group, an alkoxy group and a hydroxyl group are preferred, and an alkyl group is more preferred.

In formula (2), p represents an integer from 1 to 5. In combination with (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, and (d) phenoxy resin, improved strength and adhesion are achieved. From the viewpoint of forming an excellent insulating layer, p is preferably 1 to 4, more preferably 2 to 4, and still more preferably 2 or 3.

In formula (2), when X is a plural number, they may be the same or different. In a suitable embodiment, at least one X is an alkylene group or a cycloalkylene group, which may have a substituent.

In a suitable embodiment, the carbodiimide compound is preferably at least 50 mass%, more preferably at least 60 mass%, and even more preferably when the mass of all molecules of the carbodiimide compound is 100% by mass. It is 70 mass % or more, more preferably 80 mass % or more or 90 mass % or more, and contains the structural unit represented by formula (2). The carbodiimide compound can substantially become a structural unit represented by formula (2) by removing the terminal structure. The terminal structure of the carbodiimide compound is not particularly limited, but examples include an alkyl group, a cycloalkyl group, and an aryl group, and these may have a substituent. The alkyl group, cycloalkyl group, and aryl group used as the terminal structure may be the same as the alkyl group, cycloalkyl group, or aryl group described for the substituent that the group represented by X may have. Moreover, the substituent which the group used as a terminal structure may have may be the same as the substituent which the group represented by X may have. From the viewpoint of suppressing the generation of outgas when curing the resin composition, the weight average molecular weight of the carbodiimide compound is preferably 500 or more, more preferably 600 or more, and still more preferably 700. above, and even better is above 800, and the best is above 900 or above 1,000. Furthermore, from the viewpoint of obtaining good compatibility, the upper limit of the weight average molecular weight of the carbodiimide compound is preferably 5,000 or less, more preferably 4,500 or less, still more preferably 4,000 or less, and still more preferably 3,500 or less. , the best value is less than 3,000. The weight average molecular weight of the carbodiimide compound can be measured, for example, by the gel permeation chromatography (GPC) method (polystyrene equivalent). [0083] Furthermore, the carbodiimide compound is derived from its preparation method, and may contain an isocyanate group (-N=C=O) in the molecule. From the viewpoint of obtaining a resin composition showing good storage stability and thereby realizing an insulating layer showing desired characteristics, the content of isocyanate groups in the carbodiimide compound (also called "NCO content") , preferably 5 mass% or less, more preferably 4 mass% or less, still more preferably 3 mass% or less, still more preferably 2 mass% or less, particularly preferably 1 mass% or less or 0.5 mass% or less. [0084] Commercially available carbodiimide compounds can be used. Examples of commercially available carbodiimide compounds include Carbodilite (registered trademark) V-02B, V-03, V-04K, V-07 and V-09 manufactured by Nisshinbo Chemical Co., Ltd., and Rheinland Chemical Co., Ltd. Stavaxol (registered trademark) P, P400 and Hykagil 510. In combination with (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler and (d) phenoxy resin, strength and adhesion are obtained. From the viewpoint of forming an insulating layer with excellent properties in all properties, the content of the carbodiimide compound in the resin composition is preferably 1% by mass or more, more preferably 2% by mass or more, and still more preferably 3% by mass. or more, 4 mass% or more, or 5 mass% or more. Although the upper limit of the content of the carbodiimide compound is not particularly limited, it is preferably 30 mass% or less, more preferably 20 mass% or less, and still more preferably 15 mass% or less. [0086] <(f) Hardening agent> The resin composition may contain (f) hardening agent. The curing agent is not particularly limited as long as it has the function of curing the resin of component (b), etc., and examples thereof include phenol-based curing agents (including naphthol-based curing agents), active ester-based curing agents, benzox Azine-based hardeners and cyanate ester-based hardeners, etc. One type of hardening agent can be used alone, or two or more types can be used in combination. The component (d) is preferably at least one selected from the group consisting of phenol-based hardeners, active ester-based hardeners, and cyanate ester-based hardeners, more preferably one or more selected from the group consisting of phenol-based hardeners and active ester-based hardeners. One or more types, preferably a phenolic hardener. [0087] As the phenol-based hardener, from the viewpoint of heat resistance and water resistance, a phenol-based hardener having a novolak structure or a naphthol-based hardener having a novolak structure is preferred. Furthermore, from the viewpoint of adhesion to the wiring layer, a nitrogen-containing phenol-based curing agent is preferred, and a phenol-based curing agent containing a triazine skeleton is more preferred. Among them, a phenolic novolak hardener containing a triazine skeleton is preferred from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion to the wiring layer. Specific examples of phenolic hardeners include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Meiwa Kasei Co., Ltd., and "NHN" and "CBN" manufactured by Nippon Kayaku Co., Ltd. , "GPH", "SN170", "SN180", "SN190", "SN475", "SN485", "SN495V", "SN375", "SN395" manufactured by Nippon Steel & Sumitomo Metal Corporation, "TD" manufactured by DIC Corporation -2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA -1163", "KA-1165", "GDP-6115L" and "GDP-6115H" manufactured by Kunei Chemical Co., Ltd., "OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., etc. [0089] From the viewpoint of obtaining an insulating layer with excellent adhesion to the wiring layer, an active ester-based hardener is also preferred. Although the active ester-based hardener is not particularly limited, generally speaking, it is preferable to use phenol esters, thiophenol esters, N-hydroxyamine esters, esters of heterocyclic hydroxyl compounds, etc. in one molecule. Compounds with two or more highly reactive ester groups. The active ester hardener is preferably obtained by the condensation reaction of a carboxylic acid compound and/or a sulfurcarboxylic acid compound and a hydroxyl compound and/or a thiol compound. Especially from the viewpoint of improving heat resistance, an active ester hardener obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester type hardener obtained from a carboxylic acid compound, a phenol compound and/or a naphthol compound is more preferred. Hardener. Examples of carboxylic acid compounds include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid, and the like. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, and methylated bisphenol. F. Methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1, 6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, phloroglucinol, dicyclopentadiene-type Phenolic compounds, phenolic novolac, etc. Here, the "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol with one molecule of dicyclopentadiene. Specifically, preferred are an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetate of phenolic novolac, and an active ester compound containing a phenolic novolak. Among the active ester compounds of benzoyl compounds, more preferred are active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure. The "dicyclopentadiene-type diphenol structure" refers to a divalent structural unit composed of a phenylene group-dicyclopentylene group-phenylene group. As commercially available active ester hardeners, examples of active ester compounds containing a dicyclopentadiene-type diphenol structure include "EXB9451", "EXB9460", "EXB9460S", and "HPC-8000-65T" , "HPC-8000H-65TM", "EXB-8000L-65TM" (manufactured by DIC Corporation), as the active ester compound containing a naphthalene structure, "EXB9416-70BK" (manufactured by DIC Corporation), as an active ester compound containing phenolic novolac Examples of the active ester compound of an acetyl compound include "DC808" (manufactured by Mitsubishi Chemical Corporation). Examples of the active ester compound of a benzoyl compound including phenol novolak include "YLH1026" (manufactured by Mitsubishi Chemical Corporation). Examples of the active ester hardener for the acetyl compound of the novolac include "DC808" (manufactured by Mitsubishi Chemical Corporation). Examples of the active ester hardener for the benzyl compound of the phenol novolak include "YLH1026" (manufactured by Mitsubishi Chemical Corporation). Corporation), "YLH1030" (manufactured by Mitsubishi Chemical Corporation), "YLH1048" (manufactured by Mitsubishi Chemical Corporation), etc. [0092] Specific examples of the benzoxazine-based hardener include "HFB2006M" manufactured by Showa Polymer Co., Ltd. and "Pd" and "Fa" manufactured by Shikoku Chemical Industry Co., Ltd. As the cyanate ester-based hardener, for example, bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4 ,4'-methylene bis(2,6-dimethylphenyl cyanate), 4,4'-ethylene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2 ,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane , 1,3-bis(4-cyanatephenyl-1-(methylethylene))benzene, bis(4-cyanatephenyl)sulfide and bis(4-cyanatephenyl) Bifunctional cyanate ester resins such as ethers, multifunctional cyanate ester resins derived from phenol novolac and cresol novolak, etc., prepolymers in which part of these cyanate ester resins are triazinized, etc. Specific examples of cyanate ester-based hardeners include "PT30" and "PT60" manufactured by Lonza Japan (both are phenol novolac-type polyfunctional cyanate ester resins), "BA230", and "BA230S75" ( A part or all of the bisphenol A dicyanate becomes a triazinized terpolymer (prepolymer), etc. When the resin composition contains component (d), the content of the hardener in the resin composition is not particularly limited, but it is preferably 10 mass% or less, more preferably 8 mass% or less, and still more preferably It is 5 mass% or less. In addition, the lower limit is not particularly limited, but is preferably 1 mass% or more. [0095] <(g) Hardening accelerator> The resin composition may contain (g) a hardening accelerator. Examples of the hardening accelerator include phosphorus-based hardening accelerators, amine-based hardening accelerators, imidazole-based hardening accelerators, guanidine-based hardening accelerators, metal-based hardening accelerators, etc. Preferred are phosphorus-based hardening accelerators and amine-based hardening accelerators. Hardening accelerator, imidazole type hardening accelerator, metal type hardening accelerator, more preferably amine type hardening accelerator, imidazole type hardening accelerator, metal type hardening accelerator. One type of hardening accelerator may be used alone, or two or more types may be used in combination. Examples of the phosphorus-based hardening accelerator include triphenylphosphine, phosphonium borate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, and tetrabutyl Phosphonium decanoate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, etc., preferably triphenylphosphine , Tetrabutylphosphonium decanoate. Examples of the amine-based hardening accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6 , -Shen(dimethylaminomethyl)phenol, 1,8-diazabicyclo(5,4,0)-undecene, etc., preferably 4-dimethylaminopyridine, 1 ,8-diazabicyclo(5,4,0)-undecene. Examples of imidazole-based hardening accelerators include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4 -Methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methyl 1-Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl -4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazole Onium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-Undecyl imidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazineisocyanuric acid Adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2 ,3-dihydro-1H-pyrrole[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazolium, 2- Among imidazole compounds such as phenylimidazoline and adducts of imidazole compounds and epoxy resins, 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferred. [0099] As the imidazole-based hardening accelerator, commercially available products can be used, and examples include "P200-H50" manufactured by Mitsubishi Chemical Corporation. Examples of the guanidine-based hardening accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, and 1-(o-tolyl)guanidine , dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7- Methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-deca Octalkyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenyl biguanide, 1-(o-tolyl) Biguanide, etc., preferably dicyandiamide and 1,5,7-triazabicyclo[4.4.0]dec-5-ene. Examples of metal-based hardening accelerators include organic metal complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organic metal complex include organic cobalt complexes such as cobalt (II) acetyl pyruvate and cobalt (III) acetyl pyruvate, and copper (II) acetyl pyruvate. Organic copper complexes, organic zinc complexes such as zinc (II) acetyl pyruvate, etc., organic iron complexes such as iron (III) acetyl pyruvate, nickel (II) acetyl pyruvate, etc. Organic nickel complexes, organic manganese complexes of manganese (II) acetyl pyruvate, etc. Examples of organic metal salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate, and the like. When the resin composition contains the component (g), the content of the hardening accelerator in the resin composition is not particularly limited, but it is preferably a combination of the component (b) and the non-volatile component of the hardener (f). When the total amount is 100% by mass, it is 0.01% by mass to 3% by mass. [0103] <(h) Flame retardant> The resin composition may contain (h) a flame retardant. Examples of the flame retardant include organophosphorus flame retardants, phosphorus compounds containing organic nitrogen, nitrogen compounds, silicone flame retardants, metal hydroxides, and the like. One kind of flame retardant can be used alone, or two or more kinds can be used in combination. [0104] As the flame retardant, commercially available products can be used, for example, "HCA-HQ" manufactured by Sanko Co., Ltd., etc. can be used. [0105] When the resin composition contains a flame retardant, although the content of the flame retardant is not particularly limited, it is preferably 0.5 mass% to 20 mass%, more preferably 0.5 mass% to 15 mass%. More preferably, it is 0.5 mass % - 10 mass %. <(i) Optional additives> The resin composition may further contain other additives if necessary. Examples of the other additives include organic metal compounds such as organic copper compounds, organic zinc compounds, and organic cobalt compounds, and binders, Resin additives such as tackifiers, defoaming agents, leveling agents, adhesion-imparting agents and colorants. [0107] <Physical Properties of the Resin Composition> The cured product obtained by thermally curing the resin composition of the present invention at 180° C. for 1 hour has an elastic modulus of 8 GPa or more at 23° C. The upper limit is not particularly limited, but may be, for example, 18 GPa or less, 15 GPa or less, 13 GPa or less, or 11 GPa or less. By setting the elastic modulus to 8 GPa or more, the occurrence of warpage of the hardened material can be suppressed. The elastic modulus mentioned above can be measured according to the method described in <Measurement of elastic modulus and tensile breaking point strength> mentioned later. [0108] The cured product obtained by thermally hardening the resin composition of the present invention at 180° C. for 1 hour has a breaking point strength (MPa) of 55 or more at 23° C., preferably 60 or more, and more preferably 65 or more. The upper limit is not particularly limited, but may be 100 or less, for example. The above-mentioned breaking point strength can be measured according to the method described in <Measurement of Elastic Modulus and Tensile Breaking Point Strength> described later. [0109] The resin composition of the present invention can provide a cured product (insulating layer) that suppresses warpage and has excellent strength and adhesion. Furthermore, since it contains component (b), it has good compatibility with component (a). Accordingly, the resin composition of the present invention can be suitably used as a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package), or for forming a circuit board (including a printed wiring board). It can be used as a resin composition for an insulating layer (a resin composition for an insulating layer of a circuit board). It can also be further suitably used as a resin composition for forming an interlayer insulating layer (formed by plating) for forming a conductor layer by plating. The resin composition is used as the interlayer insulating layer of the circuit board in the conductor layer. It can also be suitably used as a resin composition for sealing semiconductor wafers (resin composition for semiconductor wafer sealing) and a resin composition for forming wiring on semiconductor wafers (resin composition for semiconductor wafer wiring formation). [Resin sheet] The resin sheet of the present invention includes a support and a resin composition layer. The resin composition layer is bonded to the support. The resin composition layer is composed of the resin composition of the present invention. From the viewpoint of thinning, the thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, still more preferably 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, or 40 μm or less. Although the lower limit of the thickness of the resin composition layer is not particularly limited, it may generally be 1 μm or more, 5 μm or more, 10 μm or more, or the like. [0112] As the support, for example, a film, a metal foil, and a release paper made of a plastic material can be cited, and preferably a film or a metal foil made of a plastic material. When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes referred to as "PET"), polyethylene naphthalate Polyesters such as diester (hereinafter sometimes abbreviated as "PEN"), polycarbonate (hereinafter sometimes abbreviated as "PC"), acrylic and cyclic polyolefins such as polymethyl methacrylate (PMMA) , triacetyl cellulose (TAC), polyether sulfide (PES), polyetherketone, polyimide, etc. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and cheap polyethylene terephthalate is particularly preferred. [0114] When a metal foil is used as the support, examples of the metal foil include copper foil, aluminum foil, etc., and copper foil is preferred. As the copper foil, a foil composed of copper as a single metal may be used, or a foil composed of an alloy of copper and other metals (such as tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used. [0115] The surface of the support that is bonded to the resin composition layer may be frosted or corona treated. [0116] Furthermore, as the support, a support with a release layer in which the surface to be joined to the resin composition layer has a release layer can be used. Examples of the release agent used for the release layer of the support with the release layer include one selected from the group consisting of alkyd resin, polyolefin resin, urethane resin, and silicone resin. The above release agent. As the support with a release layer, commercially available products can be used. For example, "SK-1" and "AL-5" made by Lintec Corporation, which are PET films having a release layer containing an alkyd resin release agent as a main component, can be used. ", "AL-7", "Lumirror T60" made by Toray Co., Ltd., "Purex" made by Teijin Co., Ltd., "Unipiel" made by Unitika Co., Ltd., etc. [0117] Although the thickness of the support is not particularly limited, it is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. Furthermore, when using a support with a release layer, it is preferable that the thickness of the entire support with a release layer is within the above range. [0118] The resin sheet can be produced, for example, by preparing a resin varnish that dissolves the resin composition in an organic solvent, applying the resin varnish on a support using a die coater, and drying the resin varnish to form a resin composition layer. Examples of organic solvents include ketones such as acetone, methyl ethyl ketone (MEK), and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, and propylene glycol monomethyl ether ethyl. Acetate esters such as acid esters and carbitol acetate, carbitols such as cellosolve and butyl carbitol, aromatic hydrocarbons such as toluene and xylene, dimethylformamide, dimethyl formamide, etc. Amide solvents such as methylacetamide (DMAc) and N-methylpyrrolidone. One type of organic solvent may be used alone, or two or more types may be used in combination. [0120] Drying can be carried out by well-known methods such as heating and blowing hot air. Although the drying conditions are not particularly limited, the resin composition layer is dried so that the content of the organic solvent is 10% by mass or less, preferably 5% by mass or less. Although it differs depending on the boiling point of the organic solvent in the resin varnish, for example, when using a resin varnish containing 30% to 60% by mass of an organic solvent, it can be dried at 50°C to 150°C for 3 to 10 minutes. A resin composition layer is formed. [0121] On the surface of the resin sheet that is not bonded to the support of the resin composition layer (that is, the surface opposite to the support), a protective film according to the support may be further laminated. The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By laminating a protective film, it is possible to prevent dust and the like from adhering to or scratching the surface of the resin composition layer. Resin sheets can be rolled into rolls and stored. When the resin sheet has a protective film, it can be used by peeling off the protective film. [0122] Instead of the resin sheet of the present invention, a prepreg formed by impregnating a sheet-like fiber base material with the resin composition of the present invention can be used. [0123] The sheet-like fiber base material used for the prepreg is not particularly limited, and those commonly used as base materials for prepregs such as glass cloth, aramid nonwoven fabric, liquid crystal polymer nonwoven fabric, etc. can be used. From the viewpoint of thinning, the thickness of the sheet-like fiber base material is preferably 900 μm or less. The lower limit of the thickness of the sheet-like fiber base material is not particularly limited, but can usually be 1 μm or more. [0124] Prepregs can be manufactured by known methods such as hot melt method and solvent method. [0125] The thickness of the prepreg may be in the same range as the resin composition layer in the above-mentioned resin sheet. [0126] The resin sheet of the present invention can be suitably used to form an insulating layer (insulating resin sheet for semiconductor chip packages) in the production of semiconductor chip packages. For example, the resin sheet of the present invention can be suitably used for forming an insulating layer of a circuit board (a resin sheet for an insulating layer of a circuit board), and can further be suitably used for forming an interlayer of a conductor layer formed by plating. Insulating layer (for the interlayer insulating layer of the circuit board where the conductor layer is formed by plating). Examples of packages using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package. Furthermore, the resin sheet of the present invention can be suitably used for sealing a semiconductor wafer (resin sheet for semiconductor wafer sealing) or for forming wiring on a semiconductor wafer (resin sheet for semiconductor wafer wiring formation). For example, it can be suitably used for a fan. Fan-out type WLP (Wafer Level Package), Fan-in type WLP, fan-out type PLP (Panel Level Package), Fan-in type PLP, etc. In addition, MUF (Molding Under Filling) material used after connecting the semiconductor chip to the substrate can also be suitably used. The resin sheet of the present invention can be suitably used in a wide range of applications requiring high insulation reliability, such as the insulating layer used to form circuit boards such as printed wiring boards. [Circuit substrate] The circuit substrate of the present invention includes an insulating layer formed of a cured product of the resin composition of the present invention. The manufacturing method of the circuit board of the present invention may include: (1) the step of preparing a base material having a base material and a wiring layer with a wiring layer provided on at least one side of the base material; (2) applying the present invention The resin sheet is laminated on the base material with the wiring layer in such a manner that the wiring layer is embedded in the resin composition layer, and is thermally cured to form an insulating layer. (3) The step of connecting the wiring layers between layers. In addition, the manufacturing method of the circuit substrate may include (4) the step of removing the base material. [0128] Step (3) If the wiring layer can be connected between layers, although it is not particularly limited, it is preferably the step of forming a through hole in the insulating layer, forming the wiring layer, and grinding or grinding the insulating layer to expose the wiring layer. At least any one of the steps. [0129] <Step (1)> Step (1) is a step of preparing a base material having a base material and a wiring layer with a wiring layer provided on at least one side of the base material. For example, a base material with a wiring layer has a first metal layer and a second metal layer that are part of the base material on both sides of the base material, and the second metal layer has a wiring layer on the surface opposite to the surface on the base material side. Specifically, a dry film (photosensitive resist film) is laminated on a base material, and exposed and developed using a photomask to form a patterned dry film. The developed patterned dry film is used as a plating mask. After the wiring layer is formed by electrolytic plating, the patterned dry film is peeled off. Alternatively, the first metal layer and the second metal layer may not be provided. Examples of the base material include glass epoxy substrate, metal substrate (stainless steel or cold-rolled steel plate (SPCC), etc.), polyester substrate, polyimide substrate, BT resin substrate, and thermosetting polyphenylene. Substrates such as ether substrates can form a metal layer such as copper foil on the surface of the substrate. In addition, metal layers such as a peelable first metal layer and a second metal layer (such as Mitsui Metal's ultra-thin copper foil with carrier copper foil, trade name "Micro Thin") can be formed on the surface. [0131] The dry film is not particularly limited as long as it is a photosensitive dry film composed of a photoresist composition. For example, dry films of novolac resin, acrylic resin, etc. can be used. Commercially available dry films can be used. [0132] The lamination conditions of the base material and the dry film are the same as the conditions for laminating the resin sheet embedded in the wiring layer in step (2) described below, and the preferred ranges are also the same. [0133] After the dry film is laminated on the base material, in order to form the desired pattern on the dry film, a photomask is used to expose and develop under predetermined conditions. [0134] Although the line (circuit width)/space (width between circuits) ratio of the wiring layer is not particularly limited, it is preferably 20/20 μm or less (that is, the pitch is 40 μm or less) and 0.5/0.5 μm or more. The pitch system does not need to be uniform throughout the wiring layer. The minimum pitch of the wiring layer can be 40 μm or less. [0135] After the pattern of the dry film is formed, a wiring layer is formed, and the dry film is peeled off. Here, the wiring layer can be formed by a plating method using a dry film formed with a desired pattern as a plating mask. [0136] The conductor material used for the wiring layer is not particularly limited. In a suitable embodiment, the wiring layer includes at least one selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. The above metals. The wiring layer may be a single metal layer or an alloy layer. Examples of the alloy layer include alloys of two or more metals selected from the above groups (such as nickel and chromium alloys, copper and nickel alloys, and copper and titanium). alloy). [0137] The thickness of the wiring layer depends on the design of the desired wiring board, but is preferably 3 μm to 35 μm. In step (3), when the interlayer connecting wiring layer is exposed by grinding or grinding the insulating layer to expose the wiring layer, it is preferable that the thickness of the wiring between layers is different from that of the unconnected wiring. The thickness of the wiring layer can be adjusted by repeating the pattern formation described above. Among the wiring layers, the thickness of the wiring layer (conductive pillar) having the thickest thickness depends on the design of the desired wiring board, but is preferably 100 μm or less and 2 μm or more. In addition, the interconnection wiring between layers can be formed into a convex shape. [0138] After forming the wiring layer, the dry film is peeled off. The dry film can be peeled off using an alkaline peeling liquid such as sodium hydroxide solution. If necessary, the unnecessary wiring pattern can be removed by etching, etc., and the desired wiring pattern can also be formed. The spacing of the formed wiring layers is as described above. <Step (2)> Step (2) is to laminate the resin sheet of the present invention on the base material with the wiring layer in such a manner that the wiring layer is embedded in the resin composition layer, and then thermally harden it to form an insulating layer. steps. Specifically, the wiring layer of the substrate with the wiring layer obtained in the aforementioned step (1) is laminated in a manner that the resin composition layer of the resin sheet is embedded, so that the resin composition layer of the resin sheet is heated Hardens to form an insulating layer. [0140] Lamination of the wiring layer and the resin sheet can be performed by, for example, heating and pressing the resin sheet onto the wiring layer from the support side after removing the protective film of the resin sheet. Examples of a member for heat-pressing a resin sheet onto a wiring layer (hereinafter also referred to as a "heat-pressing member") include a heated metal plate (SUS mirror plate, etc.) or a metal roller (SUS roller). Furthermore, it is preferable not to directly press the heating pressing member onto the resin sheet, but to press the surface of the wiring layer through an elastic material such as heat-resistant rubber so that the resin sheet fully follows the unevenness on the surface of the wiring layer. [0141] The lamination of the wiring layer and the resin sheet can be carried out by vacuum lamination after removing the protective film of the resin sheet. In the vacuum lamination method, the heating and pressing temperature is preferably in the range of 60°C to 160°C, the heating and pressing pressure is preferably in the range of 0.098MPa to 1.77MPa, and the heating and pressing time is preferably in the range of 20 seconds to 400 seconds. Lamination is preferably carried out under reduced pressure conditions of 13 hPa or less. [0142] After lamination, the laminated resin sheets can be smoothed under normal pressure (atmospheric pressure), for example, by pressing a heated pressing member from the support side. The pressing conditions for the smoothing treatment can be the same as the heat pressing conditions for the above-mentioned lamination. Alternatively, lamination and smoothing can be performed continuously using the above-mentioned commercially available vacuum laminator. [0143] After the resin composition layer is laminated on the base material with the wiring layer in such a manner that the wiring layer is embedded, the resin composition layer is thermally cured to form an insulating layer. For example, although the thermal curing conditions of the resin composition layer vary depending on the type of the resin composition, the curing temperature can be in the range of 120°C to 240°C, and the curing time can be in the range of 5 minutes to 120 minutes. Before thermally curing the resin composition layer, the resin composition layer can be preheated at a temperature lower than the curing temperature. [0144] The support of the resin sheet can be laminated with the resin sheet on the base material with the wiring layer, and then peeled off after being thermally cured, or the support can be peeled off before laminating the resin sheet on the base material with the wiring layer. In addition, the support may be peeled off before the roughening step described below. [0145] <Step (3)> Step (3) is a step of connecting the wiring layers between layers. Specifically, it is a step of forming a through hole in the insulating layer, forming a conductor layer, and connecting the wiring layer between the layers. Or grinding or grinding the insulating layer to expose the wiring layer to connect the wiring layer between layers. [0146] When adopting the steps of forming a through hole in the insulating layer, forming a conductor layer, and connecting the wiring layer between layers, the formation of the through hole is not particularly limited. Although laser irradiation, etching, mechanical drilling, etc. can be used, the formation of the through hole is not limited. Preferably, it is carried out by laser irradiation. This laser irradiation can be performed using any suitable laser processing machine such as carbonic acid gas laser, YAG laser, excimer laser, etc. as the light source. Specifically, laser irradiation is performed from the surface side of the support body of the resin sheet to penetrate the support body and the insulating layer to expose the wiring layer and form a through hole. [0147] The conditions of laser irradiation are not particularly limited, and laser irradiation can be implemented by any suitable steps according to the conventional method according to the selected means. [0148] Although the shape of the through hole, that is, the shape of the opening outline when viewed in the extending direction, is not particularly limited, it is generally circular (substantially circular). [0149] After the through hole is formed, the sludge removal step in the through hole can be performed, that is, the sludge removal step can be performed. When the conductor layer described below is formed by a plating step, for example, a wet desmear process can be performed on the through hole. When the conductor layer is formed by a sputtering step, for example, Dry slag removal step such as plasma treatment step. In addition, the desmear removal step may also be combined with the roughening treatment step. [0150] Before forming the conductor layer, the through holes and the insulating layer can be roughened. The roughening process can be carried out in generally known procedures and conditions. Examples of dry roughening treatment include plasma treatment, and examples of wet roughening treatment include swelling treatment with a swelling liquid, roughening treatment with an oxidizing agent, and roughening treatment with an oxidizing agent in this order. Method of neutralizing the neutralizing solution. [0151] After forming the via hole, a conductor layer is formed. The conductor material constituting the conductor layer is not particularly limited. The conductor layer can be formed by any suitable method known in the art such as plating, sputtering, and evaporation. The conductor layer is preferably formed by plating. In a suitable embodiment, for example, a conductor layer having a desired wiring pattern can be formed on the surface of the insulating layer by plating using a conventionally known technique such as a semi-additive method or a fully additive method. In addition, when the support of the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by conventionally known techniques such as the subtractive method. The conductor layer can be a single-layer structure, a single metal layer composed of different types of metals or alloys, or a multi-layer structure in which two or more alloy layers are laminated. [0152] Specifically, a plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, on the formed plating seed crystal layer, a mask pattern is formed to expose a part of the plating seed crystal layer corresponding to the desired wiring pattern. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating. At this time, at the same time as the electrolytic plating layer is formed, the via hole can be embedded by electrolytic plating to form a filled via. After the electrolytic plating layer is formed, the mask pattern is removed. Then, the unnecessary plating seed layer is removed by etching, etc., and a conductor layer having a desired wiring pattern can be formed. Furthermore, when forming the conductor layer, the dry film used to form the mask pattern is the same as the dry film mentioned above. [0153] The conductive layer is not only linear wiring, but may also include, for example, electrode pads (Lands) that can carry external terminals. In addition, the conductor layer may be composed only of electrode pads. [0154] In addition, the conductor layer can be formed by forming a plating seed layer, forming an electrolytic plating layer and filling holes without using a mask pattern, and then patterning by etching. [0155] When the step of grinding or grinding the insulating layer to expose the wiring layer and connecting the wiring layers between layers is used, the wiring layer can be exposed as a grinding method or grinding method for the insulating layer. If the grinding or grinding surface is horizontal, then It is not particularly limited, and conventionally known polishing methods or grinding methods can be applied. Examples include chemical mechanical polishing methods using chemical mechanical polishing devices, mechanical polishing methods such as buffing, and surface grinding methods using grinding stone rotation. wait. In the same steps as forming through holes in the insulating layer to form the conductor layer and connecting the wiring layers between layers, the steps of removing slag and roughening can be performed to form the conductor layer. In addition, it is not necessary to expose the entire wiring layer, and a part of the wiring layer may be exposed. [0156] <Step (4)> The manufacturing method of the circuit substrate is a step of removing the base material to form the circuit substrate of the present invention. The method of removing the base material is not particularly limited. In a suitable embodiment, the base material is peeled off from the circuit board at the interface between the first and second metal layers, and the second metal layer is etched away using, for example, a copper chloride aqueous solution. If necessary, the conductor layer can be peeled off the base material while being protected by the protective film. [Semiconductor Chip Package] A first aspect of the semiconductor chip package of the present invention is a semiconductor chip package in which a semiconductor chip is mounted on the circuit substrate of the present invention. By bonding semiconductor wafers with the above-mentioned circuit substrate of the present invention, a semiconductor wafer package can be produced. [0158] As long as the terminal electrode of the semiconductor chip is connected to the circuit wiring conductor of the circuit board, the bonding conditions are not particularly limited, and well-known conditions used in flip-chip mounting of the semiconductor chip can be used. In addition, the semiconductor chip and the circuit board can be bonded through an insulating adhesive. [0159] A suitable embodiment is to press the semiconductor wafer onto the circuit substrate. As the pressing conditions, for example, the pressing temperature can be in the range of 120°C to 240°C, and the pressing time can be in the range of 1 second to 60 seconds. [0160] Another suitable embodiment is to reflow the semiconductor wafer to the circuit board for bonding. The reflow conditions may be in the range of 120°C to 300°C, for example. [0161] After the semiconductor wafer is bonded to the circuit substrate, for example, the semiconductor wafer can also be filled with a mold underfill material to obtain a semiconductor wafer package. The filling method of the mold bottom filling material can be carried out by well-known methods. The resin composition or resin sheet of the present invention can also be used as a mold bottom filling material. [0162] The second aspect of the semiconductor chip package of the present invention is a semiconductor chip package (fan-out (Fan-out) type WLP). The manufacturing method of the semiconductor chip package includes: (A) the step of laminating the temporary fixing film on the base material, (B) the step of temporarily fixing the semiconductor chip on the temporary fixing film, (C) the resin of the resin sheet of the present invention The step of laminating the composition layer on the semiconductor wafer, or applying the resin composition of the present invention on the semiconductor wafer and thermally hardening it to form a sealing layer, (D) peeling the base material and the temporary fixing film from the semiconductor wafer (E) The step of forming a rewiring forming layer (insulating layer) on the surface of the semiconductor chip where the base material and the temporary fixing film are peeled off, (F) Forming the conductor layer (rewiring) on the rewiring forming layer (insulating layer) layer) and (G) the step of forming a solder resist layer on the conductor layer. In addition, the manufacturing method of the semiconductor chip package may include the step of (H) cutting a plurality of semiconductor chip packages into individual semiconductor chip packages and performing individualization. [0163] <Step (A)> Step (A) is a step of laminating a temporarily fixed film on a base material. The lamination conditions of the base material and the temporary fixing film are the same as the lamination conditions of the wiring layer and the resin sheet in step (2) of the circuit board manufacturing method, and the preferred range is also the same. [0164] The material used for the base material is not particularly limited. Examples of substrates include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel plates (SPCC); thermally hardened substrates in which glass fibers are impregnated with epoxy resin, etc. (For example, FR-4 substrate); substrates made of bismaleimide triazine resin (BT resin), etc. [0165] The material of the temporarily fixing film is not particularly limited as long as it can be peeled off from the semiconductor wafer in the step (D) described below while temporarily fixing the semiconductor wafer. Commercially available products can be used to temporarily fix the film. Examples of commercially available products include Riva alpha manufactured by Nitto Denko Co., Ltd. and the like. [0166] <Step (B)> Step (B) is a step of temporarily fixing the semiconductor wafer on the temporary fixing film. The semiconductor chip can be temporarily fixed using a well-known device such as a flip chip bonder or a die bonder. The arrangement and number of semiconductor wafers can be appropriately set according to the shape and size of the temporary fixing film, the intended production number of semiconductor packages, etc. For example, they can be arranged in a plurality of rows and arranged in a matrix shape of a plurality of columns for temporary fixation. <Step (C)> Step (C) is to laminate the resin composition layer of the resin sheet of the present invention on the semiconductor wafer, or to apply the resin composition of the present invention on the semiconductor wafer and heat it. The step of hardening to form a sealing layer. In step (C), it is preferable to laminate the resin composition layer of the resin sheet of the present invention on the semiconductor wafer and heat-harden it to form a sealing layer. [0168] Lamination of the semiconductor wafer and the resin sheet can be performed by removing the protective film of the resin sheet and then, for example, heating and pressing the resin sheet onto the semiconductor wafer from the support side. Examples of a member for heat-pressing a resin sheet onto a semiconductor wafer (hereinafter also referred to as a "heat-pressing member") include a heated metal plate (SUS mirror plate, etc.) or a metal roller (SUS roller). Furthermore, it is preferable not to directly press the heated pressing member onto the resin sheet, but to press the surface of the semiconductor wafer through an elastic material such as heat-resistant rubber so that the resin sheet fully follows the uneven surface of the semiconductor wafer. [0169] In addition, the lamination of the semiconductor wafer and the resin sheet can be performed by a vacuum lamination method after removing the protective film of the resin sheet. The lamination conditions in the vacuum lamination method are the same as the lamination conditions of the wiring layer and the resin sheet in step (2) of the circuit board manufacturing method, and the preferred range is also the same. [0170] The support of the resin sheet can be laminated with a resin sheet on the semiconductor wafer and then peeled off after thermal hardening, or the support can be peeled off before the resin sheet is laminated on the semiconductor wafer. [0171] The coating conditions for the resin composition are the same as those used when forming the resin composition layer of the resin sheet of the present invention, and the preferred ranges are also the same. [0172] <Step (D)> Step (D) is a step of peeling off the base material and the temporary fixing film from the semiconductor wafer. The peeling method can be appropriately changed according to the material of the temporarily fixed film. For example, the temporarily fixed film can be peeled off by heating, foaming (or expanding), or irradiating ultraviolet rays from the base material side to reduce the adhesive force of the temporarily fixed film. Peeling methods, etc. [0173] In the method of heating, foaming (or expanding) and peeling the temporarily fixed film, the heating conditions are usually 100°C to 250°C for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of irradiating ultraviolet rays from the base material side to reduce the adhesive force of the temporarily fixed film and peeling it off, the irradiation dose of ultraviolet rays is usually 10mJ/cm ² to 1000mJ/cm ² . [0174] <Step (E)> Step (E) is a step of forming a rewiring formation layer (insulating layer) on the surface of the semiconductor wafer after peeling off the base material and the temporarily fixed film. [0175] The material used to form the rewiring forming layer (insulating layer) is not particularly limited as long as it has insulating properties when the rewiring forming layer (insulating layer) is formed. From the perspective of ease of manufacturing of the semiconductor chip package It seems that photosensitive resin and thermosetting resin are preferred. As the thermosetting resin, a resin composition having the same composition as the resin composition used to form the resin sheet of the present invention can be used. [0176] After the rewiring forming layer (insulating layer) is formed, a through hole can be formed in the rewiring forming layer (insulating layer) in order to connect the semiconductor chip and the conductor layer described below between layers. When the through hole is formed and the material for forming the rewiring forming layer (insulating layer) is a photosensitive resin, first, the surface of the rewiring forming layer (insulating layer) is irradiated with active energy rays through the mask pattern, The wiring layer of the irradiated part is photohardened. [0178] Examples of active energy rays include ultraviolet rays, visible rays, electron beams, X-rays, etc., and ultraviolet rays are particularly preferred. The amount and time of ultraviolet irradiation can be appropriately changed according to the photosensitive resin. As the exposure method, a contact exposure method in which the mask pattern is closely adhered to the rewiring forming layer (insulating layer) for exposure, or a contact exposure method in which the mask pattern is not closely adhered to the rewiring forming layer (insulating layer), can be used. Any non-contact exposure method that uses parallel light to expose. [0179] Next, by developing and rewiring the formation layer (insulating layer), the unexposed portion is removed, and a through hole is formed. The development system is suitable for both wet and dry development. As the developer used in wet development, a well-known developer can be used. [0180] As a development method, for example, a dipping method, a paddle method, a spray method, a brushing method, a scraping method, etc. can be cited. From the viewpoint of resolution, the paddle method is suitable. [0181] When the material forming the rewiring forming layer (insulating layer) is a thermosetting resin, the formation of the through hole is not particularly limited. Laser irradiation, etching, mechanical drilling, etc. can be used, but it is preferred. To be performed by laser irradiation. Laser irradiation can be performed using any suitable laser processing machine such as carbonic acid gas laser, UV-YAG laser, excimer laser, etc. as a light source. [0182] Although the shape of the through hole, that is, the shape of the opening outline when viewed in the extending direction, is not particularly limited, it is generally circular (substantially circular). The top diameter of the through hole (the diameter of the opening on the surface of the rewiring formation layer (insulating layer)) is preferably 50 μm or less. Although the lower limit is not particularly limited, it is preferably 10 μm or more. [0183] <Step (F)> Step (F) is a step of forming a conductor layer (rewiring layer) on the rewiring formation layer (insulating layer). The method of forming the conductor layer on the rewiring formation layer (insulating layer) is the same as the method of forming the conductor layer after forming the through hole in the insulating layer in step (3) of the manufacturing method of the circuit board, and the preferred range is also the same. Alternatively, steps (E) and (F) can be repeated to alternately stack conductor layers (rewiring layers) and rewiring formation layers (insulating layers). [0184] <Step (G)> Step (G) is a step of forming a solder resist layer on the conductor layer. [0185] The material forming the solder resist layer is not particularly limited as long as it has insulating properties when the solder resist layer is formed. From the perspective of ease of manufacturing of the semiconductor chip package, it is preferably a photosensitive resin or thermosetting resin. Sex resin. As the thermosetting resin, a resin composition having the same composition as the resin composition used to form the resin sheet of the present invention can be used. [0186] Moreover, in step (G), if necessary, collision processing to form an impact can be performed. Collision processing can be performed by known methods such as solder balls and solder plating. In addition, the formation of the through hole in the collision processing can be performed in the same manner as step (E). [0187] <Step (H)> The method of manufacturing a semiconductor chip package may include step (H) in addition to steps (A) to (G). Step (H) is a step of cutting a plurality of semiconductor chip packages into individual semiconductor chip packages for individualization. [0188] The third aspect of the semiconductor chip package of the present invention is to form a rewiring layer (insulating layer) and a solder resist layer in the semiconductor chip package (fan-out (Fan-out) type WLP) with the method of the present invention. Semiconductor chip packaging made of resin compositions or resin sheets. [Semiconductor device] Examples of semiconductor devices used to implement the semiconductor chip package of the present invention include those provided in electrical products (such as computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, and medical equipment). and televisions, etc.) and various semiconductor devices in vehicles (such as motorcycles, cars, trams, ships, aircraft, etc.). [Examples] [0190] Although the present invention will be specifically described through examples below, the present invention is not limited to these examples. However, in the following description, "parts" and "%" mean "parts by mass" and "% by mass" respectively, unless otherwise expressly stated. [Synthesis Example 1] <Production of Elastomer A> In a flask equipped with a stirring device, a thermometer and a condenser, 368.41 g of ethyl diglycol acetate and Solvesso 150 (aromatic solvent, Exxon Mobil Corporation) 368.41g, place 100.1g (0.4 mol) of diphenylmethane diisocyanate and polycarbonate diol (number average molecular weight: about 2000, hydroxyl equivalent: 1000, non-volatile matter: 100%, "C-2015N" manufactured by Kuraray Co., Ltd.) 400g (0.2 mol), and reacted at 70°C for 4 hours. Next, 195.9g (0.2 mole) of nonylphenol novolak resin (hydroxyl equivalent 229.4g/eq, average function 4.27, average calculated molecular weight 979.5g/mol) and 41.0g ethylene glycol dianhydrotrielliate are placed. (0.1 mol), it took 2 hours to heat up to 150°C and react for 12 hours. Confirmation by FT-IR that the NCO peak at 2250cm-1 disappeared. Confirmation that the NCO peak disappears is regarded as the end of the reaction. After cooling the reactant to room temperature, it is filtered through a 100-mesh filter cloth to obtain a resin with a polycarbonate structure (non-volatile content 50% by mass). The number average molecular weight is 6100. (Preparation of hardened material for evaluation) On the release agent-untreated surface of a release agent-treated PET film ("501010" manufactured by Lintec Co., Ltd., thickness 38 μm, 240 mm square), a glass cloth base material ring was overlapped Oxy resin double-sided copper-clad laminate ("R5715ES" manufactured by Panasonic Co., Ltd., thickness 0.7mm, 255mm square) is fixed on the four sides with polyimide adhesive tape (width 10mm) (hereinafter referred to as "fixed PET film"). The resin varnishes prepared in Examples and Comparative Examples were applied to a PET film ("Lumirror R80" manufactured by Toray Co., Ltd.) which was released using an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). Thickness 38 μm, softening point 130°C (hereinafter referred to as "release PET"), apply it with a die coater so that the thickness of the temporary resin composition layer after drying becomes 40 μm, at 80°C to 120°C (average 100°C) for 10 minutes to obtain an adhesive film. Each adhesive film (thickness 40 μm, 200 mm square) was used to separate the temporary resin composition layer from the fixed PET film using a batch-type vacuum pressure laminator (two-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.). The mold processing surface is in contact with each other, and the lamination process is performed in the center to obtain a resin sheet with a support. The lamination process was performed by depressurizing for 30 seconds to lower the air pressure to 13hPa or less, and then pressing at 100°C and a pressure of 0.74MPa for 30 seconds. [0193] Secondly, under the temperature condition of 100°C, it was put into an oven at 100°C for 30 minutes, and then under the temperature condition of 175°C, it was transferred to an oven at 175°C for 30 minutes to heat harden. Then, the substrate was taken out at room temperature, the release PET was peeled off from the resin sheet with the support, and then put into an oven at 180° C., and then thermally cured under curing conditions for 60 minutes. After thermal hardening, the polyimide adhesive tape was peeled off, the hardened product was removed from the glass cloth base epoxy resin double-sided copper-clad laminate, and the PET film ("501010" manufactured by Lintec Co., Ltd.) was also peeled off, and A thin hardened product was obtained. The obtained hardened material is called "hardened material for evaluation."<Measurement of Elastic Modulus and Tensile Breaking Point Strength> A dumbbell-shaped No. 1 shape was cut out of the hardened material for evaluation to obtain a test piece. The tensile strength of this test piece was measured using a tensile testing machine "RTC-1250A" manufactured by Orientech Corporation, and the elastic modulus and tensile breaking point strength at 23°C were determined. The measurement system is carried out in accordance with JIS K7127. This operation was performed three times, and the average value was shown in the table. <Strength evaluation> The forming tape (forming tape) side of the temporary fixing film (Riva alpha No. 31950E, Thermal release tape manufactured by Nitto Denko Co., Ltd.) was placed on an 8-inch silicon wafer with a roll laminator. After attaching to the wafer, 97 silicon wafers (DIE size 9×6mm, height 150um) are arranged at equal intervals on the base adhesive surface of Riva alpha. The resin varnishes prepared in Examples and Comparative Examples were used to release the PET film ("Lumirror R80" manufactured by Toray Co., Ltd.) with an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). , thickness 38 μm, softening point 130°C, hereinafter referred to as "release PET"), apply it with a die coater so that the thickness of the temporary resin composition layer after drying becomes 200 μm, at 80°C to 120°C (average 100°C) was dried for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on the single side of the silicon wafer of the above-mentioned wafer with silicon wafer using a batch vacuum pressure laminator (2-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.) to seal. Silicon wafer. After heating the silicon wafer in an oven at 150°C for 1 hour, the silicon wafer was heated on a hot plate at 200°C. After the silicon wafer and Riva alpha were peeled off with the forming tape, The interface with the resin sealed with Riva alpha using a base adhesive is peeled off by hand, and the silicon wafer is embedded in the resin to obtain a resin wafer. Those with resin defects or cracks produced during the above process will be graded as "×", and those with no resin defects or cracks will be graded as "○". <Adhesion evaluation> A 1000Å vapor-deposited silicon nitride wafer was prepared on an 8-inch silicon wafer, and the resin varnish prepared in the examples and comparative examples was coated with an alkyd resin release agent (Lintec Co., Ltd.'s "AL-5") release-treated PET film (Toray Co., Ltd.'s "Lumirror R80", thickness 38 μm, softening point 130°C, hereinafter referred to as "release PET"), and temporarily dry it The resin composition layer is coated with a die coater so that the thickness of the resin composition layer becomes 20 μm, and dried at 80°C to 120°C (average 100°C) for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on the above-mentioned wafer using a batch-type vacuum pressure laminator (two-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.). After heat-hardening in an oven at 180°C for 1 hour, cut the resin composition layer transversely (100 squares) into a 1mm × 1mm grid according to "JIS K5400-8.5 (1990)", and perform pressure cooker processing (121°C/humidity 100%/100 hours), conduct a tape peeling test and calculate the number of squares that peel off the resin. The number of peeled squares from 0 to 5 was designated as "○", the number of peeled squares from 6 to 19 was designated as "△", and the number of peeled squares from 20 to more than 20 was designated as "×". <Evaluation of warpage> The resin varnishes prepared in Examples and Comparative Examples were applied to a PET film (Toray) treated with an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). Co., Ltd.'s "Lumirror R80" with a thickness of 38 μm and a softening point of 130°C (hereinafter referred to as "release PET") is coated with a die coater so that the thickness of the temporary resin composition layer after drying becomes 300 μm. cloth and dried at 80°C to 120°C (average 100°C) for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on a 12-inch silicon wafer (thickness: 775um) using a batch-type vacuum pressure laminator (2-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.) and heated at 180°C. 1 hour to harden the resin and attach the resin to the wafer. Place the resin-coated wafer on a flat surface with the resin side facing up, and measure the amount of warpage. The amount of warpage at the maximum warp point is less than 2 mm and is rated as ○, while the amount of warpage of more than 2 mm is rated as ×. [Example 1] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX7553BH30" made by , epoxy equivalent 258) 3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd. "V-07", carbodiimide equivalent 200, non-volatile content 50 mass% toluene solution) 4 parts, amine group 115 parts of silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) surface-treated spherical silica A (average particle diameter 1.7 μm, specific surface area (m ² /g) 2.7 um), polyphenylene ether oligo Polymer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with a solid content of approximately 52%, phenolic hydroxyl equivalent: 435g/eq) 9.6 parts, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 1.5 parts of 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm), hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd. , "2P4MZ-5M", 1-benzyl-2-phenylimidazole, 5 mass% solid content MEK solution) 3 parts, 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ( "SHP050" manufactured by ROKITECHNO Co., Ltd.) was filtered to obtain a resin varnish. [Example 2] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX6954BH30" made by , epoxy equivalent 258) 3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd. "V-07", carbodiimide equivalent 200, non-volatile content 50 mass% toluene solution) 4 parts, amine group 115 parts of silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) surface-treated spherical silica A (average particle diameter 1.7 μm, specific surface area (m ² /g) 2.7 um), phenol containing a triazine skeleton Novolac hardener ("LA-7054" manufactured by DIC Co., Ltd., MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%) 3.3 parts, naphthol-based hardener ("SN" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd. -485", 6 parts of methyl ethyl ketone solution (solid content: 50%) with hydroxyl equivalent: 215g/eq, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxy Phenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1- 3 parts of benzyl-2-phenylimidazole, MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO). Resin varnish is prepared. [Example 3] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX6954BH30" made by , epoxy equivalent 258) 3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd. "V-07", carbodiimide equivalent 200, non-volatile content 50 mass% toluene solution) 4 parts, amine group 115 parts of silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) surface-treated spherical silica A (average particle diameter 1.7 μm, specific surface area (m ² /g) 2.7 um), phenol containing a triazine skeleton Novolac hardener (DIC Co., Ltd.'s "LA-7054", MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%) 5 parts, flame retardant (Sanko Co., Ltd.'s "HCA-HQ", 10-(2 , 5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ- 5M", 1-benzyl-2-phenylimidazole, 3 parts of MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter (manufactured by ROKITECHNO Co., Ltd. "SHP050") was filtered to obtain resin varnish. [Example 4] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and dicyclopentadiene type epoxy resin ( "HP-7200" manufactured by DIC Corporation, epoxy equivalent 258) 3 parts, bisphenol F type phenoxy resin ("FX-316" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.), 5 parts polyphenylene ether oligo Polymer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with a solid content of approximately 52%, phenolic hydroxyl equivalent: 435g/eq) 9.6 parts, carbodiimide compound ("V" manufactured by Nissinbo Chemical Co., Ltd. -07", 4 parts of toluene solution (carbodiimide equivalent 200, non-volatile content 50% by mass), spherical silica A surface-treated with aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) (average particle diameter 1.7 μm, specific surface area (m ² /g) 2.7 um) 115 parts, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxyphenyl)-10-hydrogen -1.5 parts of -9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm), hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenyl 3 parts of imidazole, MEK solution with a solid content of 5% by mass), and 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish. [Example 5] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: approximately 186), 5 parts of elastomer A, and a phenoxy resin containing a flexible structure (Mitsubishi Chemical Co., Ltd.'s "YX7180BH40", a 1:1 solution of cyclohexanone with a solid content of 40% by mass: MEK) 25 parts, dicyclopentadiene type epoxy resin (DIC's "HP-7200", Oxygen equivalent: 258) 3 parts of carbodiimide compound ("V-07" manufactured by Nisshinbo Chemical Co., Ltd., carbodiimide equivalent: 200, non-volatile content: 50% by mass, toluene solution), 4 parts, aminosilane-based 120 parts of spherical silica A (average particle diameter 1.7 μm, specific surface area (m ² /g) 2.7 um) surface-treated with coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.), and phenolic novolac containing a triazine skeleton It is composed of 8.3 parts of hardener ("LA-7054" manufactured by DIC Co., Ltd., MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%), flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5 -Dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M" , 1-benzyl-2-phenylimidazole, 3 parts of MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone, uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO Corporation) ) is filtered to obtain resin varnish. [Comparative Example 1] Mixed 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: approximately 186), 15 parts of elastomer A, and dicyclopentadiene type epoxy resin ( "HP-7200" manufactured by DIC Corporation, epoxy equivalent 258) 3 parts, carbodiimide compound ("V-07" manufactured by Nisshinbo Chemical Co., Ltd., carbodiimide equivalent 200, non-volatile content 50 mass% toluene Solution) 4 parts, spherical silica A (average particle diameter 1.7 μm, specific surface area (m ² /g) 2.7 um) surface-treated with an aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) 115 9.6 parts of polyphenylene ether oligomer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with solid content of about 52%, phenolic hydroxyl equivalent: 435g/eq), flame retardant (Samko "HCA-HQ" produced by the company, 1.5 parts of 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm), hardening acceleration 3 parts of agent (MEK solution with a solid content of 5% by mass, "2P4MZ-5M" manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenylimidazole, solid content), and 100 parts of cyclohexanone were homogenized with a high-speed rotary mixer. The mixture was dispersed and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to obtain a resin varnish. [Comparative Example 2] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), dicyclopentadiene type epoxy resin ("HP" manufactured by DIC Corporation) -7200", 3 parts of epoxy equivalent 258), 15 parts of bisphenol F-type phenoxy resin ("FX-316" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.), phenolic novolak-based hardener containing triazine skeleton (DIC Co., Ltd.'s "LA-7054", MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%) 8.3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd.'s "V-07", carbodiimide 4 parts of a toluene solution with an equivalent weight of 200 and a non-volatile content of 50% by mass), spherical silica A (average particle diameter 1.7 μm, ratio Surface area (m ² /g) 2.7um) 115 parts, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10- Phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenylimidazole, solid content 5% by mass) 3 parts of MEK solution), 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish. [Comparative Example 3] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX7553BH30" made by , epoxy equivalent: 258) 3 parts of spherical silica A (average particle diameter 1.7 μm, specific surface area (m ² /g)) surface-treated with an aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) 2.7um) 115 parts, polyphenylene ether oligomer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with solid content of about 52%, phenolic hydroxyl equivalent: 435g/eq) 9.6 parts, barrier Fuel ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxyphenyl)-10-hydrogen-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenylimidazole, MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone at high speed The mixture was uniformly dispersed with a rotary mixer and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to obtain a resin varnish. [0207] [Preparation Example 1] <Preparation of resin sheet for fan-out type WLP> On a polyethylene terephthalate film (thickness 38 μm), the thickness of the resin composition layer after drying was The resin varnish described in Example 1 was applied with a die coater so as to become 200 μm, and dried at 80 to 120° C. (average 100° C.) for 10 minutes to obtain a resin sheet. [0209] It was found that when the sealing layer of a fan-out WLP is made of the above-mentioned resin sheet, it has sufficient performance as a fan-out WLP. [Preparation Example 1] <Preparation of Resin Sheet for Interlayer Insulation> Example 1 was described on a polyethylene terephthalate film (thickness 38 μm) so that the thickness of the resin composition layer after drying would be 200 μm. The resin varnish is coated with a die coater and dried at 80 to 120°C (average 100°C) for 10 minutes to obtain a resin sheet. [0210] It was found that when the interlayer insulating layer of the circuit substrate is made of the above-mentioned resin sheet, the circuit substrate of the present invention has sufficient performance.

Claims (12)

A resin composition containing (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, (d) phenoxy resin and (e) carbon dioxide The imine compound, component (a) is a resin having a structure represented by formula (1-a) and a structure represented by formula (1-b),

[In the formula, R1 represents the residue obtained by removing the hydroxyl group of the polycarbonate diol, R2 represents the residue obtained by removing the carboxyl group or acid anhydride group of the polybasic acid or its anhydride, and R3 represents the residue obtained by removing the isocyanate group of the diisocyanate compound. ] and (a) component has a functional group capable of reacting with (b) component. For example, the resin composition of Claim 1, wherein the content of component (c) is 75 mass% to 95 mass% when the non-volatile content of the resin composition is 100 mass%. For example, the resin composition of claim 1 or 2, wherein the content of component (a) is 30 mass % to 85 mass %, assuming that the non-volatile content of the resin composition excluding component (c) is 100 mass %. %. The resin composition according to claim 1 or 2, wherein the elastic modulus of the cured product obtained by thermally curing the resin composition at 180°C for 1 hour at 23°C is 8 GPa or more. The resin composition of claim 1 or 2, wherein component (a) has a phenolic hydroxyl group. The resin composition according to claim 1 or 2 further contains (f) a hardener, and the hardener is at least one selected from the group consisting of phenolic hardeners. Such as the resin composition of claim 1 or 2, which is a resin composition for the insulating layer of semiconductor chip packaging. A resin sheet having a support and a resin composition layer. The resin composition layer includes the resin composition according to any one of claims 1 to 7 provided on the support. Such as the resin sheet of claim 8, which is a resin sheet used for the insulating layer of semiconductor chip packaging. A circuit substrate including an insulating layer formed of a cured product of the resin composition according to any one of claims 1 to 7. A semiconductor chip package in which a semiconductor chip is mounted on the circuit substrate according to claim 10. A semiconductor chip package, which includes a resin composition according to any one of claims 1 to 7, or a semiconductor chip sealed by a resin sheet according to claim 8.