JP6458886B2 - LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a light emitting device, a method for manufacturing the light emitting device, and an electronic apparatus equipped with the light emitting device.

  As an example of a light emitting device, for example, an electro-optical device (Patent Document 1) in which organic electroluminescence (hereinafter referred to as organic EL) elements are arranged in a matrix has been proposed. The electro-optical device described in Patent Document 1 is an active matrix light-emitting device that includes a thin film transistor and in which pixels that emit light are arranged in a matrix. In the pixel, a light reflection layer, a translucent insulating film, a first electrode (pixel electrode), a partition layer, a light emitting functional layer, and a second electrode (counter electrode) are sequentially stacked.

A current is supplied to the light emitting functional layer from the pixel electrode in a region not covered with the partition layer, and the light emitting functional layer emits light. That is, a region not covered with the partition layer (a region where the partition layer is not formed) is a light emitting region. Further, the pixel electrode is provided so as to cover the contact hole, and the pixel electrode and the thin film transistor are electrically connected through the contact hole. That is, a portion where the pixel electrode and the thin film transistor are electrically connected becomes a contact region. The pixel electrode is provided across the light emitting region and the contact region.
The translucent insulating film has a role of adjusting the optical distance between the light reflecting layer and the counter electrode, and the thickness of the translucent insulating film is such that the light emitting region of the first pixel> the second pixel. It is set so as to satisfy the relationship of light emitting region> light emitting region of the third pixel> contact hole forming region (contact region).

  With this configuration (optical resonance structure), light emitted from the light emitting functional layer reciprocates between the light reflecting layer and the counter electrode, and the optical distance between the light reflecting layer and the counter electrode, that is, translucency. Light having a resonance wavelength corresponding to the thickness of the insulating film is selectively amplified and emitted from each pixel. The electro-optical device described in Patent Document 1 uses, for example, the light in the red wavelength range with a peak wavelength of 610 nm, the light in the green wavelength range with a peak wavelength of 540 nm, and the blue wavelength with a peak wavelength of 470 nm. In this wavelength range, that is, light with high color purity is emitted from each pixel as display light, and has excellent color reproducibility.

JP 2009-134067 A

  As described above, the electro-optical device described in Patent Document 1 has the relationship that the film thickness of the light-transmitting insulating film in the light-emitting region> the film thickness of the light-transmitting insulating film in the contact region. A boundary having a different optical distance (a boundary having a different film thickness of the light-transmitting insulating film) is formed between the contact region and the contact region.

In the electro-optical device described in Patent Document 1, when an attempt is made to widen the light emitting region in order to obtain a brighter display, there is a problem that it is difficult to widen the light emitting region because the boundary becomes an obstacle.
Specifically, when the light emitting region is widened beyond the boundary, portions having different optical distances are generated in the light emitting region. Since the resonance wavelength changes when the optical distance is different, light having a different resonance wavelength is emitted from the light emitting region, and the color purity of the light emitted from the light emitting region is lowered. For this reason, there is a problem that it is difficult to widen the light emitting region beyond the boundary.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A light-emitting device according to this application example includes a transistor, a light reflection layer provided above the transistor, the light reflection layer, a first layer thickness portion, and the first layer. A first insulating layer having a second layer thickness portion thicker than the thick portion and a third layer thickness portion thicker than the second layer thickness; and over the first insulating layer. A light-transmitting pixel electrode, a second insulating layer covering a peripheral portion of the pixel electrode, a light-emitting functional layer covering the pixel electrode and the second insulating layer, and the light-emitting functional layer A counter electrode having a light reflecting property and a light transmitting property, and a conductive layer provided on the first layer thickness portion and at least partially overlapping the pixel electrode in a plane. The pixel electrode includes a first pixel electrode provided in the first layer thickness portion and a second layer thickness portion. A second pixel electrode provided; and a third pixel electrode provided in a portion having the third layer thickness; the first pixel electrode; the second pixel electrode; The third pixel electrode is connected to the transistor through the conductive layer.

  The conductive layer is provided on the first layer thickness portion, and a signal from the transistor is supplied to the pixel electrode through the conductive layer. The conductive layer overlaps the pixel electrode in a plan view, and a region where the conductive layer is provided becomes a contact region that connects the transistor and the pixel electrode. The peripheral edge portion of the pixel electrode is covered with the second insulating layer, and current is supplied to the light emitting functional layer from the pixel electrode in the region not covered with the second insulating layer in accordance with a signal from the transistor. Emits light. That is, a region that is not covered with the second insulating layer is a light emitting region where the light emitting functional layer emits light. The pixel electrode is provided across the contact region and the light emitting region.

  Light emitted from the light emitting functional layer (light emitting region) reciprocates between the light reflecting layer and the counter electrode, resonates according to the optical distance between the light reflecting layer and the counter electrode, and emits light of a specific wavelength. Is amplified. The optical distance varies depending on the thickness of the first insulating layer. Since the first insulating layer has three types of layer thicknesses, light having three types of resonance wavelengths is emitted. For example, the color purity of blue, green, and red light emitted in the light emitting region is adjusted by adjusting the thickness of the first insulating layer so that light of three wavelengths of blue, green, and red is amplified. Can be increased.

  The first pixel electrode is provided in the first layer thickness portion, the second pixel electrode is provided in the second layer thickness portion, and the third pixel electrode is provided in the third layer thickness portion. The thickness of the first insulating layer in the region where each pixel electrode is provided is constant. That is, the optical distance of the region where the pixel electrode is provided is constant.

  Since the optical distance of the area where the pixel electrode is provided is constant, the optical distance changes even if the distance between the light emitting area and the contact area in the pixel electrode is reduced and the light emitting area in the pixel electrode is widened. There is nothing to do. In other words, in the known technique (Japanese Patent Application Laid-Open No. 2009-134067), the region where the pixel electrode is provided has a boundary with different optical distances, but in the present invention, the optical region in the region where the pixel electrode is provided. Therefore, even if the light emitting region in the pixel electrode is widened, the resonance wavelength does not change (decrease in color purity), and the light emitting region can be widened as compared with the known technique. Therefore, the luminous intensity of the light emitted from the light emitting region can be increased without causing a decrease in the color purity of the light emitted from the light emitting region. Therefore, the light emitting device according to this application example can provide a display with high color purity and luminous intensity, that is, a bright and vivid color display.

  Application Example 2 In the light emitting device according to the application example described above, the first insulating layer includes a first insulating film, a second insulating film, and a third insulating film that are sequentially stacked from the reflective layer side. The first insulating film has the first layer thickness, and the portion where the first insulating film and the second insulating film are stacked has the second layer thickness, A portion where one insulating film, the second insulating film, and the third insulating film are stacked has the third layer thickness, and the conductive layer includes the first conductive layer, the second conductive layer, and the second conductive layer. A third conductive layer, wherein the first pixel electrode is in direct contact with the first conductive layer, and the second pixel electrode is interposed through a first contact hole that penetrates the second insulating film. The third pixel electrode is connected to the second conductive layer, and the third pixel electrode is connected to the third conductive layer through the second insulating film and the second contact hole that penetrates the third insulating film. It is preferably connected to the layer.

  The first layer thickness portion is composed of the first insulating film, the second layer thickness portion is composed of the first insulating film and the second insulating film, and the third layer thickness portion is the first insulating film. And a second insulating film and a third insulating film. By controlling the first insulating film, the second insulating film, and the third insulating film to have a uniform film thickness, the film thickness of the first layer thickness portion and the film thickness of the second layer thickness portion are controlled. And the uniformity of the film thickness of the third layer thickness portion can be improved. Therefore, the optical distance of the region where the first pixel electrode is provided, the optical distance of the region where the second pixel electrode is provided, and the optical distance of the region where the third pixel electrode is provided And the variation in the resonance wavelength of the light emitted from each pixel electrode can be reduced, and the color purity of the light emitted from the light emitting region of each pixel electrode can be increased.

  Application Example 3 In the light-emitting device according to the application example, the first pixel electrode is provided in the first layer thickness portion, and the second pixel electrode has the second layer thickness. It is preferably provided in the part.

  By disposing the first pixel electrode in the first layer thickness portion, light having a resonance wavelength corresponding to the first layer thickness portion can be emitted from the light emitting region of the first pixel electrode. By disposing the second pixel electrode in the second layer thickness portion, light having a resonance wavelength corresponding to the second layer thickness portion can be emitted from the light emitting region of the second pixel electrode. Therefore, the color purity of light emitted from the light emitting regions of the first pixel electrode and the second pixel electrode can be increased.

  Application Example 4 In the light emitting device according to the application example described above, the first pixel electrode, the second pixel electrode, and the third pixel electrode are arranged in the first direction, The first layer thickness portion and the second layer thickness portion preferably have a rectangular shape extending in a second direction intersecting the first direction.

  In the first layer thickness portion, the first pixel electrode is disposed and emits light having the first resonance wavelength. In the second layer thickness portion, the second pixel electrode is disposed and emits light having the second resonance wavelength. In the third layer thickness portion, the third pixel electrode is disposed and emits light of the third resonance wavelength. The portion that emits light of the first resonance wavelength, the portion that emits light of the second resonance wavelength, and the portion that emits light of the third resonance wavelength have a rectangular shape extending in the second direction. . A portion that emits light having a first resonance wavelength (a portion having a first layer thickness) and a portion that emits light having a second resonance wavelength (a second layer thickness) in a first direction that intersects the second direction ) And a portion that emits light of the third resonance wavelength (a portion of the third layer thickness) are repeatedly arranged, so that light emitting regions (displays) in which the portions emitting three kinds of colors are arranged in stripes Region) can be formed.

  Application Example 5 In the light emitting device according to the application example described above, the first insulating layer includes a first insulating film and an organic insulating layer that are sequentially stacked on the light reflecting layer side, and the organic insulating layer The layer has a first flat portion and a second flat portion thicker than the first flat portion, and the first insulating film has the first layer thickness, and the first insulating film and The portion where the first flat portion is laminated has the second layer thickness, and the portion where the first insulating film and the second flat portion are laminated is the third layer thickness. The conductive layer includes a first conductive layer, a second conductive layer, and a third conductive layer, and the first pixel electrode is in direct contact with the first conductive layer, and The second pixel electrode is connected to the second conductive layer through a first contact hole that penetrates the first flat portion, and the third pixel electrode penetrates the second flat portion. First Via the contact hole, it is preferably connected to the third conductive layer.

  Since the organic insulating layer can be formed using an inexpensive device such as coating or printing, compared to an inorganic insulating layer (eg, silicon oxide) formed using an expensive device such as plasma CVD or sputtering, It can be formed at low cost.

  Application Example 6 In the light emitting device according to the application example described above, the organic insulating layer includes a first organic insulating film and a second organic insulating film formed using a photosensitive resin material, Preferably, the flat portion is formed of the first organic insulating film, and the second flat portion is formed of the first organic insulating film and the second organic insulating film.

  The organic insulating film can be patterned only by a photolithographic process using a photosensitive resin material, so the process is simple compared to the patterning method of an inorganic insulating film (for example, silicon oxide) that requires an etching process in addition to the photolithographic process. Can improve productivity.

  Application Example 7 A light-emitting device according to this application example includes a first transistor, a second transistor, a third transistor, and the first transistor, the second transistor, and the third transistor. A provided light reflecting layer; a portion having a first layer thickness; a portion having a second layer thickness greater than a portion having the first layer thickness; and the second layer thickness covering the light reflecting layer. A first insulating layer having a third layer thicker than the first layer, a first pixel electrode provided on the first layer thick, and the first transistor electrically connected to the first transistor. Connected first relay electrode, second pixel electrode provided on the second layer thickness portion, and second relay electrode electrically connected to the second transistor A third pixel electrode provided on the third layer thickness portion, and the third pixel electrode A third relay electrode electrically connected to the transistor, a counter electrode, between the first pixel electrode and the counter electrode, between the second pixel electrode and the counter electrode, and the third A light emitting functional layer provided between the pixel electrode and the counter electrode, and the first relay electrode is connected to the first via a first connection portion provided in the first layer thickness portion. The second relay electrode is connected to the second pixel electrode via a second connection portion provided in the second layer thickness portion, and is connected to the first pixel electrode. The electrode is characterized in that it is connected to the third pixel electrode through a third connection portion provided in the third layer thickness portion.

  According to this, the distance between the light emitting region and the contact region in the pixel electrode can be reduced, and the light emitting region in the pixel electrode can be widened. Therefore, the light emitting device according to this application example can provide a display with high color purity and luminous intensity, that is, a bright and vivid color display.

  Application Example 8 In the light emitting device according to the application example described above, a first light emitting region is defined on the first pixel electrode, a second light emitting region is defined on the second pixel electrode, A second insulating layer for defining a third light emitting region on the third pixel electrode is further provided, and the first light emitting region is provided on the portion having the first layer thickness, and the second light emitting The region may be provided on the second layer thickness portion, and the third light emitting region may be provided on the third layer thickness portion.

  Application Example 9 In the light emitting device according to the application example described above, the first layer thickness portion is provided so as to extend from the first light emitting region to the first connection portion, and the second layer thickness. Is provided so as to reach the second connecting portion from the second light emitting region, and the portion having the third layer thickness is provided so as to reach the third connecting portion from the third light emitting region. May be.

  Application Example 10 In the light-emitting device described in the application example, the light-emitting device further includes a fourth light-emitting region, and the second layer thickness portion extends over the second light-emitting region and the fourth light-emitting region. It may be provided.

  Application Example 11 In the light emitting device according to the application example described above, the first layer thickness portion is provided so as to surround the first connection portion, and the second layer thickness portion is the second layer thickness. It may be provided so as to surround the connecting portion, and the third layer thickness portion may be provided so as to surround the third connecting portion.

  Application Example 12 In the light emitting device according to the application example described above, the first insulating layer includes a first insulating film, a second insulating film, and a third insulating film, which are sequentially stacked from the reflective layer side. The first connection portion is connected to the first relay electrode through a first contact hole that penetrates the first insulating film, and is in contact with the first pixel electrode. A third contact hole connected to the second relay electrode through a second contact hole penetrating the first insulating film and penetrating the second insulating film. A second conductive layer connected to the second pixel electrode through the third connecting electrode, and the third connecting portion is connected to the third relay electrode through a fourth contact hole penetrating the first insulating film. And a fifth contact hole penetrating the second insulating film and the third insulating film. It may have a third conductive layer connected to the third pixel electrode and.

  Application Example 13 In the light-emitting device described in the application example, the fourth transistor, the fourth pixel electrode provided on the second layer thickness portion, and the fourth transistor are electrically connected. A fourth relay electrode connected to the first pixel electrode, and the fourth relay electrode is connected to the fourth pixel electrode via a fourth connection portion provided in the second layer thickness portion. The first insulating film and the second insulating film may be provided so as to fill a space between the second connection portion and the fourth connection portion.

  Application Example 14 An electronic apparatus according to this application example includes the light-emitting device described in the application example.

  Since the electronic device according to this application example includes the light-emitting device described in the application example, a bright and vivid display can be provided. For example, the light-emitting device described in the above application example can be applied to an electronic device having a display unit such as a head-mounted display, a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, or a navigator.

  Application Example 15 A method of manufacturing a light emitting device according to this application example includes a transistor, a light reflection layer provided above the transistor, a first layer thickness portion covering the light reflection layer, and a second layer. A first insulating layer having a layer thickness portion and a third layer thickness portion; a pixel electrode provided on the first layer thickness portion; and a second electrode covering a peripheral portion of the pixel electrode. An insulating layer, a light emitting functional layer that covers the pixel electrode and the second insulating layer, a counter electrode that covers the light emitting functional layer, and a conductive layer provided on the portion of the first layer thickness. The pixel electrode includes a first pixel electrode provided in the first layer thickness portion, a second pixel electrode provided in the second layer thickness portion, and the third layer. A third pixel electrode provided in a thick portion, and the first pixel electrode, the second pixel electrode, and the third pixel The pole is a method of manufacturing a light emitting device connected to the transistor through the conductive layer, the step of forming the light reflecting layer, and the first insulating film so as to have the first layer thickness Forming the conductive layer, forming the second insulating film so as to have the second layer thickness between the first insulating film, the first insulating film, Forming a third insulating film so as to have the third layer thickness with the second insulating film; patterning the second insulating film and the third insulating film; and Forming a first insulating layer having a layer thickness portion, a second layer thickness portion, and a third layer thickness portion; and A first contact hole exposing a part of the conductive layer and a part of the conductive layer exposed in the third layer thickness part 2 contact holes, the first pixel electrode partially overlapping the conductive layer in the first layer thickness portion, and the first layer thickness in the first layer thickness portion. Forming the second pixel electrode covering the contact hole and the third pixel electrode covering the second contact hole in a portion having the third layer thickness. And

  The light emitting device manufactured by the manufacturing method according to this application example has a configuration in which a light reflecting layer, a first insulating layer, a pixel electrode, a light emitting functional layer, and a counter electrode are stacked, and emits light from the light emitting functional layer. The light reciprocates between the light reflection layer and the counter electrode, resonates according to the optical distance between the light reflection layer and the counter electrode, and a light having a specific wavelength is amplified. The optical distance varies depending on the thickness of the first insulating layer. Since the first insulating layer is formed so as to have three kinds of layer thicknesses, light of three kinds of specific wavelengths is emitted. For example, when the first insulating layer is formed so that light of three wavelengths of blue, green, and red is selectively amplified, the color purity of blue, green, and red light emitted from the light emitting functional layer is increased. be able to.

  The first pixel electrode is formed on the first layer thickness portion of the first insulating layer, the second pixel electrode is formed on the second layer thickness portion of the first insulating layer, and the third pixel. The electrodes are formed in the third layer thickness portion of the first insulating layer, and the respective pixel electrodes are connected to the conductive layer, so that signals from the transistors are supplied through the conductive layer. In the area where each pixel electrode is formed, the optical distance (layer thickness of the first insulating layer) is constant. Therefore, even if the light emitting area in the pixel electrode is widened, the change in the resonance wavelength (color) (Purity reduction) does not occur. That is, the light emitting region is widened without causing a decrease in color purity as compared with a known technique (Japanese Patent Laid-Open No. 2009-134067) having a boundary where the optical distance is different in the region where the pixel electrode is provided. The luminous intensity of the light emitted from can be increased. Therefore, the light emitting device according to this application example can provide a display with high color purity and luminous intensity, that is, a bright and vivid color display.

1 is a schematic plan view showing a configuration of an organic EL device according to Embodiment 1. FIG. FIG. 2 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device according to the first embodiment. The schematic plan view which shows the characteristic part of a light emission pixel. FIG. 4 is a schematic sectional view taken along line A-A ′ of FIG. 3. FIG. 4 is a schematic sectional view taken along line B-B ′ of FIG. 3. FIG. 4 is a schematic sectional view taken along line C-C ′ of FIG. 3. FIG. 4 is a schematic sectional view taken along line D-D ′ in FIG. 3. FIG. 4 is a schematic sectional view taken along line E-E ′ of FIG. 3. The process flow which shows the manufacturing method of an organic electroluminescent apparatus. The schematic sectional drawing which shows the state of the organic EL apparatus after passing through each process. The schematic sectional drawing which shows the state of the organic EL apparatus after passing through each process. FIG. 3 is a schematic cross-sectional view showing a configuration of an organic EL device according to Embodiment 2. FIG. 3 is a schematic cross-sectional view showing a configuration of an organic EL device according to Embodiment 2. The process flow which shows the manufacturing method of an organic electroluminescent apparatus. The schematic sectional drawing which shows the state of the organic EL apparatus after passing through each process. The schematic sectional drawing which shows the state of the organic EL apparatus after passing through each process. Schematic of a head mounted display. FIG. 6 is a schematic plan view showing a configuration of an organic EL device according to Modification Example 1. FIG. 6 is a schematic plan view showing a configuration of an organic EL device according to Modification 2.

  Embodiments of the present invention will be described below with reference to the drawings. Such an embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. In each of the following drawings, the scale of each layer or each part is made different from the actual scale so that each layer or each part can be recognized on the drawing.

(Embodiment 1)
"Outline of organic EL device"
The organic EL device 100 according to the first embodiment is an example of a light emitting device, and has an optical resonance structure that can increase the color purity of display light.
First, an outline of the organic EL device 100 according to the present embodiment will be described with reference to FIGS. 1 to 3. 1 is a schematic plan view showing a configuration of an organic EL device, FIG. 2 is an equivalent circuit diagram showing an electrical configuration of the organic EL device, and FIG. 3 is a schematic plan view showing a characteristic portion of a light emitting pixel. .
In FIG. 3, constituent elements necessary for explaining the characteristic part of the light emitting pixel are shown, and other constituent elements are not shown. In addition, a two-dot chain line in FIG.

  As shown in FIG. 1, an organic EL device 100 according to this embodiment includes an element substrate 10 as a substrate, a plurality of light emitting pixels 20B, 20G, and 20R arranged in a matrix in a display region E of the element substrate 10, and A data line driving circuit 101 and a scanning line driving circuit 102, which are peripheral circuits for driving and controlling the light emitting pixels 20B, 20G, and 20R, an external connection terminal 103 for electrical connection with an external circuit, and the like are provided.

A plurality of external connection terminals 103 are arranged along the first side of the element substrate 10. A data line drive circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. A scanning line driving circuit 104 is provided between the second and third sides that are orthogonal to the first side and face each other, and the display region E.
Hereinafter, the direction along the first side will be described as the X direction, and the direction along the other two sides (second side and third side) orthogonal to the first side and facing each other will be described as the Y direction.
The X direction is an example of the “first direction” in the present invention, and the Y direction is an example of the “second direction” in the present invention.

  The organic EL device 100 includes a light emitting pixel 20B that can emit blue (B) light, a light emitting pixel 20G that can emit green (G) light, and a light emitting pixel 20R that can emit red (R) light. ing. In the organic EL device 100, the light emitting pixel 20B, the light emitting pixel 20G, and the light emitting pixel 20R arranged in the X direction serve as a display unit P, and a full color display is provided.

Further, the light emitting pixel 20B has a pixel electrode 31B, the light emitting pixel 20G has a pixel electrode 31G, and the light emitting pixel 20R has a pixel electrode 31R. Each of the light emitting pixel 20B (pixel electrode 31B), the light emitting pixel 20G (pixel electrode 31G), and the light emitting pixel 20R (pixel electrode 31G) is arranged in the Y direction.
The pixel electrode 31B is an example of the “first pixel electrode” in the present invention, the pixel electrode 31G is an example of the “second pixel electrode” in the present invention, and the pixel electrode 31R is the “third pixel electrode” in the present invention. This is an example of “a pixel electrode”.
In the following description, there are cases where the light-emitting pixels 20B, 20G, and 20R and the pixel electrodes 31B, 31G, and 31R are referred to as the light-emitting pixels 20 and the pixel electrode 31.

In the Y direction, light emitting pixels 20 that can emit light of the same color are arranged. That is, the light emitting pixels 20B that can emit blue (B) light are arranged in the Y direction and have a rectangular shape (stripe shape). The light emitting pixels 20G from which green (G) light emission is obtained are arranged in the Y direction and have a rectangular shape (stripe shape). The light emitting pixels 20R from which red (R) light emission is obtained are arranged in the Y direction and have a rectangular shape (stripe shape).
In the X direction, light emitting pixels 20 that can emit light of different colors are repeatedly arranged in the order of B, G, and R. The arrangement of the light emitting pixels 20 in the X direction may not be in the order of B, G, and R, and may be in the order of R, G, and B, for example.

A light-transmitting first insulating layer 28 is provided on substantially the entire surface of the element substrate 10 except for the region where the external connection terminals 103 are formed.
The translucent first insulating layer 28 includes a first region 28B in which the light emitting pixel 20B (pixel electrode 31B) is disposed, a second region 28G in which the light emitting pixel 20G (pixel electrode 31G) is disposed, And the third region 28R in which the light emitting pixel 20R (pixel electrode 31R) is disposed, and the thickness (film thickness) of the first insulating layer 28 is different in each region. Although details will be described later, the film thickness of the first insulating layer 28 in the second region 28G is larger than the film thickness of the first insulating layer 28 in the first region 28B. The film thickness of the first insulating layer 28 in the third region 28R is larger than the film thickness of the first insulating layer 28 in the second region 28G. That is, the film thickness of the first insulating layer 28 increases in the order of the first region 28B, the second region 28G, and the third region 28R.
The second region 28G is an example of the “first flat portion” in the present invention. The third region 28R is an example of the “second flat portion” in the present invention.

The first region 28B, the second region 28G, and the third region 28R have a rectangular shape (stripe shape) extending in the Y direction.
In the display area E, the X direction dimensions of the first area 28B, the second area 28G, and the third area 28R are substantially the same as the X direction dimension of the light emitting pixels 20, that is, the repetition pitch of the light emitting pixels 20 in the X direction. Is almost the same.

  In the Y direction, the first region 28B, the second region 28G, and the third region 28R are wider than the display region E. That is, the Y-direction dimensions of the first area 28B, the second area 28G, and the third area are larger than the Y-direction dimensions of the display area E. The first region 28B, the second region 28G, and the third region 28R have the same size in the Y direction as the display region E, that is, the size of the region where the light emitting pixels 20 are arranged. Also good.

  The first insulating layer 28 is also provided in the periphery of the display area E (area other than the first area 28B, the second area 28G, and the third area 28R). In the present embodiment, the film thickness of the first insulating layer 28 provided around the display area E is the same as the film thickness of the first insulating layer 28 in the third area 28R. Note that the film thickness of the first insulating layer 28 provided around the display area E is the film thickness of the first insulating layer 28 in the first area 28B or the first insulating layer in the second area 28G. It may be the same as the film thickness of 28. Further, the first insulating layer 28 provided around the display region E has a film thickness different from that of the first insulating layer 28 in the first region 28B, the second region 28G, and the third region 28R. You may do it.

  The first region 28B is an example of the “first layer thickness portion” in the present invention, and the second region 28G is an example of the “second layer thickness portion” in the present invention. The region 28R is an example of the “third layer thickness portion” in the present invention.

  As shown in FIG. 2, the element substrate 10 is provided with scanning lines 11, data lines 12, lighting control lines 13, and power supply lines 14 as signal lines corresponding to the light emitting pixels 20. The scanning line 11 and the lighting control line 13 extend in parallel in the X direction, and are connected to the scanning line driving circuit 102 (FIG. 1). The data line 12 and the power supply line 14 extend in parallel in the Y direction. The data line 12 is connected to the data line driving circuit 101 (FIG. 1). The power supply line 14 is connected to one of the plurality of external connection terminals 103 arranged.

  Near the intersection of the scanning line 11 and the data line 12, the first transistor 21, the second transistor 22, the third transistor 23, the storage capacitor 24, and the organic EL element 30 constituting the pixel circuit of the light emitting pixel 20. And are provided.

  The organic EL element 30 includes a pixel electrode 31 as an anode, a counter electrode 33 as a cathode, and a light emitting functional layer 32 including a light emitting layer sandwiched between these electrodes. The counter electrode 33 is a common electrode provided across the plurality of light emitting pixels 20. The counter electrode 33 is supplied with a reference potential Vss, a GND potential, or the like, which is lower in potential than the power supply voltage Vdd supplied to the power supply line 14, for example.

  The first transistor 21 and the third transistor 23 are, for example, n-channel transistors. The second transistor 22 is, for example, a p-channel type transistor.

The gate electrode of the first transistor 21 is connected to the scanning line 11, one current end is connected to the data line 12, and the other current end is connected to the gate electrode of the second transistor 22 and one electrode of the storage capacitor 24. It is connected.
One current end of the second transistor 22 is connected to the power supply line 14 and to the other electrode of the storage capacitor 24. The other current end of the second transistor 22 is connected to one current end of the third transistor 23. In other words, the second transistor 22 and the third transistor 23 share one current end of the pair of current ends.
The gate electrode of the third transistor 23 is connected to the lighting control line 13, and the other current end is connected to the pixel electrode 31 of the organic EL element 30.
One of the pair of current ends in each of the first transistor 21, the second transistor 22, and the third transistor 23 is a source, and the other is a drain.
The third transistor 23 is an example of the “transistor” in the present invention.

  In such a pixel circuit, when the voltage level of the scanning signal Yi supplied from the scanning line driving circuit 102 to the scanning line 11 becomes the Hi level, the n-channel first transistor 21 is turned on (ON). The data line 12 and the storage capacitor 24 are electrically connected via the first transistor 21 in the on state (ON). When a data signal is supplied from the data line driving circuit 101 to the data line 12, a potential difference between the voltage level Vdata of the data signal and the power supply voltage Vdd applied to the power supply line 14 is stored in the storage capacitor 24.

  When the voltage level of the scanning signal Yi supplied from the scanning line driving circuit 102 to the scanning line 11 becomes a low level, the n-channel first transistor 21 is turned off (OFF), and the second transistor 22 is connected between the gate and the source. The voltage Vgs is held at the voltage when the voltage level Vdata is given. In addition, after the scanning signal Yi becomes Low level, the voltage level of the lighting control signal Vgi supplied to the lighting control line 13 becomes Hi level, and the third transistor 23 is turned on (ON). Then, the current corresponding to the gate-source voltage Vgs of the second transistor 22, that is, the voltage held in the storage capacitor 24, passes through the second transistor 22 and the third transistor 23 from the power supply line 14, and the organic EL element 30. To be supplied.

  The organic EL element 30 emits light according to the magnitude of the current flowing through the organic EL element 30. The current flowing through the organic EL element 30 varies depending on the voltage held in the storage capacitor 24 (the potential difference between the voltage level Vdata of the data line 12 and the power supply voltage Vdd) and the length of the period during which the third transistor 23 is turned on. In addition, the light emission luminance of the organic EL element 30 is defined. That is, the luminance gradation according to the image information can be given to the light emitting pixel 20 by the value of the voltage level Vdata in the data signal.

In the present embodiment, the pixel circuit of the light emitting pixel 20 is not limited to having the three transistors 21, 22, and 23. For example, a configuration having a switching transistor and a driving transistor (a configuration having two transistors). ). In addition, a transistor included in the pixel circuit may be an n-channel transistor, a p-channel transistor, or may include both an n-channel transistor and a p-channel transistor. The transistor constituting the pixel circuit of the light emitting pixel 20 may be a MOS transistor having an active layer on a semiconductor substrate, a thin film transistor, or a field effect transistor.
Further, the arrangement of the lighting control lines 13 and the power supply lines 14 which are signal lines other than the scanning lines 11 and the data lines 12 depends on the arrangement of the transistors and the storage capacitors 24, and is not limited thereto.
In the present embodiment, a MOS transistor having an active layer on a semiconductor substrate is employed as the transistor constituting the pixel circuit of the light emitting pixel 20.

"Characteristics of luminescent pixels"
Next, the outline of the characteristic part of the light emitting pixel 20 will be described with reference to FIG.
As shown in FIG. 3, the light emitting pixel 20 includes a relay electrode 106, a pixel electrode 31, and a second insulating layer 29. In the light emitting pixel 20, the relay electrode 106, the pixel electrode 31, and the second insulating layer 29 are sequentially stacked (see FIGS. 5 and 6). The second insulating layer 29 has openings 29B, 29G, and 29R that expose a part of the pixel electrode 31. The light emitting pixel 20B that can emit blue (B) light has a pixel electrode 31B, a relay electrode 106B, and an opening 29B. A light emitting pixel 20G that can emit green (G) light has a pixel electrode 31G, a relay electrode 106G, and an opening 29G. The light emitting pixel 20R that can emit red (R) light has a pixel electrode 31R, a relay electrode 106R, and an opening 29R.
In the following description, there are cases where they are referred to as relay electrodes 106B, 106G, 106R, and cases where these are collectively referred to as relay electrodes 106.
The relay electrode 106 is an example of the “conductive layer” in the present invention. The relay electrode 106B is an example of the “first conductive layer” in the present invention, the relay electrode 106G is an example of the “second conductive layer” in the present invention, and the relay electrode 106R is the “third conductive layer” in the present invention. It is an example of a “layer”.

  Each of the light emitting pixels 20B, 20G, and 20R has a rectangular shape in plan view, and the longitudinal direction is arranged along the Y direction. Similarly, the pixel electrodes 31B, 31G, and 31R are also rectangular in plan view, and the longitudinal direction is arranged along the Y direction.

  As shown in the figure, the relay electrode 106 is disposed along one short side of the rectangular light emitting pixel 20 and is provided so that at least a part thereof overlaps the pixel electrode 31 in plan view. Although details will be described later, the relay electrode 106 is a part of a wiring that electrically connects the pixel electrode 31 and the third transistor 23. In other words, the pixel electrode 31 is connected to the third transistor 23 via the relay electrode 106. That is, a region where the relay electrode 106 is provided becomes a contact region.

The second insulating layer 29 has a role of covering the peripheral edge of the pixel electrode 31 and electrically insulating the adjacent pixel electrodes 31 from each other. As described above, the second insulating layer 29 has the openings 29B, 29G, and 29R that expose a part of the pixel electrode 31. The portion of the pixel electrode 31 exposed by the second insulating layer 29, that is, the pixel electrode 31 exposed by the openings 29B, 29G, and 29R is in contact with the light emitting functional layer 32 and supplies a current to the light emitting functional layer 32 to emit light. The layer 32 is allowed to emit light. For this reason, the openings 29B, 29G, and 29R provided in the second insulating layer 29 become light emitting regions of the light emitting pixels 20B, 20G, and 20R. As described above, the second insulating layer 29 also has a role of defining the light emitting region of the light emitting pixel 20.
In the present invention, the pixel electrode 31 includes an electrode portion that is in contact with the light emitting functional layer 32 in the light emitting region (openings 29B, 29G, and 29R) and functions as an electrode of the organic EL element 30, and a contact region that is connected to a transistor or a wiring. At least a conductive portion that functions as a conductive layer that connects the electrode portion and the relay electrode 106.

  Although details will be described later, the light-emitting pixel 20 of the present embodiment can reduce the distance DY between the light-emitting regions (openings 29B, 29G, and 29R) and the contact regions (relay electrodes 106B, 106G, and 106R). have. That is, the light emitting region (openings 29B, 29G, and 29R) is widened, and the light intensity of the light emitted from the light emitting functional layer 32 can be increased. This is a characteristic part of the light emitting pixel 20.

"Cross-sectional structure of light-emitting pixels"
Next, a cross-sectional structure of the light emitting pixel 20 will be described with reference to FIGS.
4 is a schematic cross-sectional view taken along the line AA ′ in FIG. 3, that is, a schematic cross-sectional view of a region provided with an opening of a second insulating layer that defines a light emitting region. FIG. 5 is a schematic cross-sectional view taken along the line BB ′ of FIG. 3, that is, a schematic cross-sectional view of a region where the pixel electrode and the third transistor are electrically connected. FIG. 6 is a schematic cross-sectional view taken along the line CC ′ of FIG. 3, that is, a schematic cross-sectional view of a luminescent pixel that can emit red (R) light. FIG. 7 is a schematic cross-sectional view taken along the line DD ′ of FIG. 3, that is, a schematic cross-sectional view of a luminescent pixel that can emit green (G) light. FIG. 8 is a schematic cross-sectional view taken along the line EE ′ of FIG. 3, that is, a schematic cross-sectional view of a luminescent pixel that can emit blue (B) light.

  FIG. 4 shows the first transistor 21 and the second transistor 22 in the pixel circuit, wirings related to the first transistor 21 and the second transistor 22, and the like, and the third transistor 23 is not shown. . FIG. 5 shows the third transistor 23 and wirings related to the third transistor 23 in the pixel circuit, and the first transistor 21 and the second transistor are not shown. 6 to 8, the second transistor 22 and the third transistor 23, wirings related to the second transistor 22 and the third transistor 23, and the like are illustrated, and the first transistor 21 is not illustrated.

First, a cross-sectional structure of a region where the openings 29B, 29G, and 29R of the second insulating layer 29 defining the light emitting region are provided will be described with reference to FIG.
As illustrated in FIG. 4, the organic EL device 100 includes an element substrate 10, a sealing substrate 70, a resin layer 71 sandwiched between the element substrate 10 and the sealing substrate 70, and the like.

  The sealing substrate 70 is a light-transmitting insulating substrate, and a quartz substrate, a glass substrate, or the like can be used. The sealing substrate 70 has a role of protecting the organic EL elements 30 arranged in the display area E from being damaged, and is provided wider than the display area E. The resin layer 71 has a role of bonding the element substrate 10 and the sealing substrate 70, and for example, an epoxy resin or an acrylic resin can be used.

  The element substrate 10 includes a pixel circuit (first transistor 21, second transistor 22, third transistor 23, storage capacitor 24, organic EL element 30), sealing layer 40, color filter 50, and the like.

  The light emitted from the light emitting pixels 20 passes through the color filter 50 and is emitted from the sealing substrate 70 side. That is, the organic EL device 100 has a top emission structure. Since the organic EL device 100 has a top emission structure, not only a transparent quartz substrate or glass substrate but also an opaque ceramic substrate or semiconductor substrate can be used as the base material 10s of the element substrate 10. In the present embodiment, a semiconductor substrate such as a silicon substrate is used as the base material 10s.

  In the base material 10s, an ion implantation which is an active layer formed by injecting into the well 10w a well portion 10w formed by implanting ions into the semiconductor substrate, and ions of a type different from the well 10w. 10d. The well portion 10 w functions as a channel for the transistors 21, 22, and 23 in the light emitting pixel 20. The ion implantation part 10 d functions as a part of the source / drain of the transistors 21, 22, and 23 and the wiring in the light emitting pixel 20.

  An insulating film 10a is provided so as to cover the surface of the substrate 10s on which the ion implanted portion 10d and the well portion 10w are formed. The insulating film 10a functions as a gate insulating film of the transistors 21, 22, and 23. On the insulating film 10a, for example, a gate electrode 22g made of a conductive film such as polysilicon is provided. The gate electrode 22g is disposed so as to face the well portion 10w that functions as a channel of the second transistor 22. The other first transistor 21 and third transistor 23 are similarly provided with gate electrodes.

  A first interlayer insulating film 15 is provided so as to cover the gate electrode 22g. In the first interlayer insulating film 15, for example, contact holes reaching the drain of the first transistor 21 and the gate electrode 22 g of the second transistor 22 are provided. A conductive film that covers at least the inside of the contact hole and covers the surface of the first interlayer insulating film 15 is formed. By patterning the conductive film, for example, the drain electrode 21d of the first transistor 21 and the gate electrode of the second transistor 22 are formed. Wiring connected to 22g is provided.

  Next, a second interlayer insulating film 16 is provided so as to cover the first interlayer insulating film 15 and the wiring on the first interlayer insulating film 15. The second interlayer insulating film 16 is provided with a contact hole reaching the wiring provided on the first interlayer insulating film 15. A conductive film covering at least the inside of the contact hole and covering the surface of the second interlayer insulating film 16 is formed, and by patterning this, for example, one electrode 24a of the storage capacitor 24 and the gate electrode of the second transistor 22 A contact portion for electrically connecting 22g is provided. Further, the data line 12 is provided in the same layer as the one electrode 24 a of the storage capacitor 24. The data line 12 is connected to the source of the first transistor 21 by a relay electrode (wiring) not shown in FIG.

  Although not shown, a dielectric layer covering at least one electrode 24a of the storage capacitor 24 is provided. In addition, the other electrode 24b of the storage capacitor 24 is provided to face the one electrode 24a of the storage capacitor 24 with the dielectric layer interposed therebetween. Thereby, the storage capacitor 24 is formed by the pair of electrodes 24a and 24b and the dielectric layer.

  A third interlayer insulating film 17 is provided so as to cover the storage capacitor 24. In the third interlayer insulating film 17, for example, a contact hole reaching the wiring formed on the other electrode 24 b of the storage capacitor 24 and the second interlayer insulating film 16 is provided. A conductive film that covers at least the inside of the contact hole and covers the surface of the third interlayer insulating film 17 is formed. By patterning the conductive film, the power supply line 14 and the relay electrode 14c (see FIG. 5) are provided. Yes. In the present embodiment, the power supply line 14 and the relay electrode 14c are made of a conductive material having both light reflectivity and conductivity, such as aluminum or an aluminum alloy. The film thickness of the power supply line 14 and the relay electrode 14c is approximately 100 nm.

The power supply line 14 is provided on substantially the entire surface of the display area E, and has an opening in each of the light emitting pixels 20B, 20G, and 20R. A relay electrode 14 c is provided in the opening of the power line 14. The power supply line 14 is disposed above the transistors 21, 22 and 23 so as to face the pixel electrode 31. Light emitted from the light emitting regions (openings 29B, 29G, 29R) is reflected by the power supply line 14.
The power supply line 14 is an example of the “light reflecting layer” in the present invention.
In addition, the structure which provides the light reflection layer which reflects the light emitted in the light emission area | region (opening 29B, 29G, 29R) for every pixel electrode 31 may be sufficient.

  On the power supply line 14, a first insulating film 25, a second insulating film 26, and a third insulating film 27 are sequentially stacked. The 1st insulating film 25, the 2nd insulating film 26, and the 3rd insulating film 27 are comprised with the insulating material which has a light transmittance. In the present embodiment, the first insulating film 25 is made of silicon nitride, and the second insulating film 26 and the third insulating film 27 are made of silicon oxide. The film thickness of the first insulating film 25 is approximately 50 nm. The film thicknesses of the second insulating film 26 and the third insulating film 27 are approximately 60 nm to 70 nm.

  The first insulating film 25 is provided on the light emitting pixel 20B that can emit blue (B) light, the light emitting pixel 20G that can emit green (G) light, and the light emitting pixel 20R that can emit red (R) light. It has been. The second insulating film 26 is provided in the light emitting pixel 20G from which green (G) light emission is obtained and the light emitting pixel 20R from which red (R) light emission is obtained. The third insulating film 27 is provided in the light emitting pixel 20R from which red (R) light emission is obtained.

The first insulating layer 28 includes a first insulating film 25, a second insulating film 26, and a third insulating film 27.
Specifically, the first insulating layer 28 of the light emitting pixel 20B that can emit blue (B) light is formed of the first insulating film 25 and has a film thickness Bd1. In the light emitting pixel 20B, the first insulating layer 28 having a film thickness Bd1 is provided so as to reach the contact region from the opening 29B (light emitting region) except for the contact region connecting the relay electrode 106B and the pixel electrode 31B. It has been. The first insulating layer 28 having a film thickness Bd1 is provided across the plurality of light emitting pixels 20B arranged in the Y direction. In other words, the first region 28B is provided with a plurality of openings 29B (light emitting regions) arranged in the Y direction. Further, a contact region for connecting the relay electrode 106B and the pixel electrode 31B is provided in the first region 28B. As shown in FIG. 5, in the contact region, the pixel electrode 31B is in direct contact with the relay electrode 106B.

  The first insulating layer 28 of the light emitting pixel 20G that can emit green (G) light is composed of the first insulating film 25 and the second insulating film 26, and has a film thickness Gd1. In the light emitting pixel 20G, the first insulating layer 28 having a film thickness Gd1 is provided so as to extend from the opening 29G (light emitting region) to the contact region except for the contact region connecting the relay electrode 106G and the pixel electrode 31G. It has been. The first insulating layer 28 having a film thickness Gd1 is provided across the plurality of light emitting pixels 20G arranged in the Y direction. In other words, the second region 28G is provided with a plurality of openings 29G (light emitting regions) arranged in the Y direction. Further, a contact region for connecting the relay electrode 106G and the pixel electrode 31G is provided in the second region 28G. As shown in FIG. 5, in the contact region, the pixel electrode 31G is connected to the relay electrode 106G through the contact hole 28CT1.

  The first insulating layer 28 of the light emitting pixel 20G from which red (G) light emission can be obtained includes the first insulating film 25, the second insulating film 26, and the third insulating film 27, and has a film thickness Rd1. Yes. In the light emitting pixel 20R, the first insulating layer 28 having the film thickness Rd1 is provided so as to reach the contact region from the opening 29R (light emitting region) except for the contact region connecting the relay electrode 106R and the pixel electrode 31R. It has been. The first insulating layer 28 having the film thickness Rd1 is provided across the plurality of light emitting pixels 20R arranged in the Y direction. In other words, the third region 28R is provided with a plurality of openings 29R (light emitting regions) arranged in the Y direction. A contact region for connecting the relay electrode 106R and the pixel electrode 31R is provided in the third region 28R. As shown in FIG. 5, in the contact region, the pixel electrode 31R is connected to the relay electrode 106R through the contact hole 28CT2.

  Therefore, the first insulating layer 28 (film thickness Bd1) of the light emitting pixel 20B, the first insulating layer 28 (film thickness Gd1) of the light emitting pixel 20G, and the first insulating layer 28 (film thickness Rd1) of the light emitting pixel 20R. It becomes thicker in the order.

In other words, the first insulating layer 28 composed of the first insulating film 25, that is, the first insulating layer 28 in the region where the light emitting pixel 20B is disposed corresponds to the first region 28B. The first insulating layer 28 composed of the first insulating film 25 and the second insulating film 26, that is, the first insulating layer 28 in the region where the light emitting pixel 20G is disposed corresponds to the second region 28G. The first insulating layer 28 composed of the first insulating film 25, the second insulating film 26, and the third insulating film 27, that is, the first insulating layer 28 in the region where the light emitting pixel 20R is disposed, This corresponds to the region 28R.
The film thickness Bd1 is an example of the “first layer thickness” in the present invention. The film thickness Gd1 is an example of the “second layer thickness” in the present invention. The film thickness Rd1 is an example of the “third layer thickness” in the present invention.

  The pixel electrode 31 is provided in an island shape on the first insulating layer 28 and faces the power supply line 14 with the first insulating layer 28 interposed therebetween. Specifically, the pixel electrode 31B is provided in an island shape on the first insulating layer 28 having a film thickness Bd1, and the pixel electrode 31G is provided in an island shape on the first insulating layer 28 having a film thickness Gd1. The electrode 31R is provided in an island shape on the first insulating layer 28 having a film thickness Bd1. The pixel electrode 31 is light transmissive and is formed of a light transmissive material such as ITO (Indium Tin Oxide), for example, and serves as an electrode for supplying holes to the light emitting functional layer 32. The film thickness of the pixel electrode 31 is approximately 100 nm.

A second insulating layer 29 is provided so as to cover the peripheral edge of the pixel electrode 31. The second insulating layer 29 is made of, for example, silicon oxide, and insulates each of the pixel electrodes 31R, 31G, and 31B. The film thickness of the second insulating layer 29 is approximately 60 nm. The second insulating layer 29 has openings 29B, 29G, and 29R. A region where the openings 29B, 29G, and 29R are provided is a light emitting region of the light emitting pixel 20. Note that the second insulating layer 29 may be formed using an organic material, for example, an acrylic photosensitive resin.
A light emitting functional layer 32, a counter electrode 33, and a sealing layer 40 are sequentially stacked so as to cover the pixel electrode 31 and the second insulating layer 29.

The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like, which are sequentially stacked from the pixel electrode 31 side. The holes supplied from the pixel electrode 31 and the electrons supplied from the counter electrode 33 are combined in the organic light emitting layer, and the light emitting functional layer 32 emits light (emits light). The film thickness of the light emitting functional layer 32 is approximately 110 nm.
The organic light emitting layer emits light having red, green, and blue light components. The organic light emitting layer may be composed of a single layer, or a plurality of layers (for example, a blue light emitting layer that emits mainly blue light when current flows, and yellow light that emits light including red and green when current flows) Layer).

  The counter electrode 33 is a common electrode for supplying electrons to the light emitting functional layer 32. The counter electrode 33 is provided so as to cover the light emitting functional layer 32 and is made of, for example, an alloy of Mg and Ag, and has light transmittance and light reflectivity. The thickness of the counter electrode 33 is approximately 10 nm to 30 nm. By reducing the thickness of the constituent material of the counter electrode 33 (such as an alloy of Mg and Ag), a light transmissive function can be imparted in addition to a light reflective function.

  A sealing layer 40 is disposed on the counter electrode 33. The sealing layer 40 is a passivation film that suppresses deterioration of the light emitting functional layer 32 and the counter electrode 33, and suppresses intrusion of moisture and oxygen into the light emitting functional layer 32 and the counter electrode 33. The sealing layer 40 includes a first sealing layer 41, a buffer layer 42, and a second sealing layer 43 that are sequentially stacked from the counter electrode 33 side, and covers the organic EL element 30 (display region E). It is provided on substantially the entire surface of the element substrate 10. The sealing layer 40 is provided with an opening (not shown) for exposing the external connection terminal 103 terminal (see FIG. 1).

  The first sealing layer 41 is made of silicon oxynitride formed using, for example, a known plasma CVD (Chemical Vapor Deposition) method, and has a high barrier property against moisture and oxygen. The film thickness of the first sealing layer 41 is approximately 200 nm to 400 nm. In addition to the silicon oxynitride described above, a metal oxide such as silicon oxide, silicon nitride, and titanium oxide can be used as the material constituting the first sealing layer 41.

  The buffer layer 42 is made of, for example, an epoxy resin or a coating-type inorganic material (silicon oxide or the like) excellent in thermal stability. The film thickness of the buffer layer 42 is larger than the film thickness of the first sealing layer 41 and is approximately 1000 nm to 5000 nm. The buffer layer 42 covers defects (pinholes, cracks), foreign matters, and the like of the first sealing layer 41, and the surface of the buffer layer 42 on the second sealing layer 43 side is flatter than the surface on the counter electrode 33 side. A smooth surface.

  The second sealing layer 43 is made of silicon oxynitride formed using, for example, a known technique such as plasma CVD. The film thickness of the second sealing layer 43 is approximately 300 nm to 700 nm. The second sealing layer 43 is made of the same material as the first sealing layer 41 and has a high barrier property against moisture and oxygen.

  On the sealing layer 40, colored layers 50B, 50G, and 50R corresponding to the light emitting pixels 20B, 20G, and 20R are provided. In other words, the color filter 50 including the colored layers 50B, 50G, and 50R is provided on the sealing layer 40. Here, the color filter 50 is provided by being laminated on the sealing layer 40.

  Next, a cross-sectional structure of a portion (contact portion) where the pixel electrode 31 and the third transistor 23 are electrically connected will be described with reference to FIG.

  As shown in FIG. 5, the base material 10 s is provided with an ion implantation part 10 d that functions as a source of the third transistor 23. The ion implanted portion 10 d (base material 10 s) is covered with the insulating film 10 a and the first interlayer insulating film 15. The first interlayer insulating film 15 and the insulating film 10a are provided with contact holes reaching the ion implantation part 10d of the third transistor 23. A conductive film that covers at least the inside of the contact hole and covers the surface of the first interlayer insulating film 15 is formed, and is patterned to be connected to the source electrode 23s of the third transistor 23 and the source electrode 23s. Wiring is provided.

  The wiring connected to the first interlayer insulating film 15 and the source electrode 23 s is covered with the second interlayer insulating film 16. The second interlayer insulating film 16 is provided with a contact hole that reaches the wiring connected to the source electrode 23s. A conductive film that covers at least the inside of the contact hole and covers the surface of the second interlayer insulating film 16 is formed. By patterning the conductive film, a wiring is provided on the second interlayer insulating film 16. The second interlayer insulating film 16 is covered with a third interlayer insulating film 17. The third interlayer insulating film 17 is provided with a contact hole reaching the wiring provided on the second interlayer insulating film 16. A conductive film covering at least the inside of the contact hole and covering the surface of the third interlayer insulating film 17 is formed. By patterning the conductive film, the power line 14 and the relay electrode 14c are formed on the third interlayer insulating film 17. Is provided.

  As described above, the power supply line 14 is provided on substantially the entire surface of the display region E, and has an opening in each of the light emitting pixels 20B, 20G, and 20R. The relay electrode 14c is provided in an island shape in each of the light emitting pixels 20B, 20G, and 20R in the opening of the power line 14. In addition, the relay electrode 14 c forms part of a wiring that electrically connects the pixel electrode 31 and the third transistor 23.

  A first insulating film 25 is provided so as to cover the power supply line 14 and the relay electrode 14c. The first insulating film 25 is provided with a contact hole 61CT that exposes a part of the relay electrode 14c. A conductive film that covers at least the inside of the contact hole 61CT and covers the surface of the first insulating film 25 is formed, and the relay electrode 106 is provided on the first insulating film 25 by patterning the conductive film. The relay electrode 106 is connected to the relay electrode 14c through the contact hole 61CT. The relay electrode 106 forms part of a wiring that electrically connects the pixel electrode 31 and the third transistor 23.

  The relay electrode 106 is made of a light-shielding conductive material such as titanium nitride. The thickness of the relay electrode 106 is approximately 50 nm. The relay electrode 106 is provided in an island shape in each of the light emitting pixels 20B, 20G, and 20R so as to cover the opening of the power supply line 14 in plan view. In other words, the relay electrode 106 is provided so that light emitted from the light emitting functional layer 32 does not enter the transistors 21, 22 and 23 through the opening of the power supply line 14. That is, the relay electrode 106 also has a role of blocking the incidence of light emitted from the light emitting functional layer 32 and suppressing malfunction of the transistors 21, 22, and 23.

  The pixel electrode 31 is provided so as to overlap the relay electrode 106 in plan view. As described above, the light emitting pixel 20B is provided with the relay electrode 106B and the pixel electrode 31B, the light emitting pixel 20G is provided with the relay electrode 106G and the pixel electrode 31G, and the light emitting pixel 20R is provided with the relay electrode 106R and the pixel electrode. 31R is provided.

  In the light emitting pixel 20B, the pixel electrode 31B is in direct contact with the relay electrode 106B.

  In the light emitting pixel 20G, a second insulating film 26 is provided between the relay electrode 106G and the pixel electrode 31G. The second insulating film 26 is provided with a contact hole 28CT1 that exposes a part of the relay electrode 106G. The pixel electrode 31B is connected to the relay electrode 106G through the contact hole 28CT1.

In the light emitting pixel 20R, a second insulating film 26 and a third insulating film 27 are provided (stacked) in this order from the relay electrode 106R side between the relay electrode 106R and the pixel electrode 31R. The second insulating film 26 and the third insulating film 27 are provided with a contact hole 28CT2 that exposes a part of the relay electrode 106R. The pixel electrode 31R is connected to the relay electrode 106R through the contact hole 28CT2.
The contact hole 28CT1 is an example of the “first contact hole” in the present invention. The contact hole 28CT2 is an example of the “second contact hole” in the present invention.

  Thus, the insulating film disposed between the relay electrode 14c and the relay electrode 106 is common (first insulating film 25) in each of the light emitting pixels 20B, 20G, and 20R. Further, the film thickness of the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31 is different for each of the light emitting pixels 20B, 20G, and 20R. Specifically, in the light emitting pixel 20 </ b> B, a first insulating layer 28 having a film thickness Bd <b> 1 composed of the first insulating film 25 is disposed between the power supply line 14 and the pixel electrode 31. In the light emitting pixel 20 </ b> G, a first insulating layer 28 having a thickness Gd <b> 1 composed of the first insulating film 25 and the second insulating film 26 is disposed between the power supply line 14 and the pixel electrode 31. In the light emitting pixel 20 </ b> R, the first insulating layer 28 having a film thickness Rd <b> 1 constituted by the third insulating film 27 including the first insulating film 25 and the second insulating film 26 between the power supply line 14 and the pixel electrode 31. Is arranged.

  Here, in the present embodiment, the first insulating film 25 is made of silicon nitride, and the second insulating film 26 and the third insulating film 27 are made of silicon oxide. Then, the insulating film disposed between the relay electrode 14c and the relay electrode 106 is made of silicon nitride, so that when the second insulating film 26 and the third insulating film 27 made of silicon oxide are processed, Since the etching selectivity with respect to the 1 insulating film 25 can be secured, the processing accuracy can be improved and the relay electrode 14c and the pixel electrode 31 can be reliably connected.

  In the first region 28B, the pixel electrode 31B is provided on the first insulating layer 28 (first insulating film 25) having a film thickness Bd1, and the pixel electrode 31B is in direct contact with the relay electrode 106B. In the second region 28G, the pixel electrode 31G is provided on the first insulating layer 28 (the first insulating film 25 and the second insulating film 26) having a film thickness Gd1, and the pixel electrode 31G is interposed through the contact hole 28CT1. It is connected to the relay electrode 106G. In the third region 28R, the pixel electrode 31R is provided on the first insulating layer 28 (the first insulating film 25, the second insulating film 26, and the third insulating film 27) having a film thickness Rd1, and the pixel electrode 31R The contact hole 28CT2 is connected to the relay electrode 106R.

  The pixel electrode 31B provided in the first region 28B, the pixel electrode 31G provided in the second region 28G, and the pixel electrode 31R provided in the third region 28R are covered with the second insulating layer 29. ing. Further, on the second insulating layer 29, a light emitting functional layer 32, a counter electrode 33, a sealing layer 40, and a color filter 50 are provided in order (stacked).

Next, the cross-sectional structure in the Y direction of the light emitting pixel 20 will be described with reference to FIGS.
As shown in FIGS. 6 to 8, the base 10 s is provided with a well portion 10 w shared by the second transistor 22 and the third transistor 23. Three wells 10w are provided with three ion implantation portions 10d. Of the three ion implanters 10d, the ion implanter 10d located at the center functions as a drain 22d (23d) shared by the second transistor 22 and the third transistor 23. An insulating film 10a is provided to cover the well portion 10w. On the insulating film 10a, gate electrodes 22g and 23g (gate electrode 22g of the second transistor 22, gate electrode 23g of the third transistor 23) made of a conductive film such as polysilicon are provided. Each of the gate electrodes 22g and 23g is disposed so as to face a portion functioning as a channel in the well portion 10w between the central-side ion implantation portion 10d and the end-side ion implantation portion 10d.

  Next, the gate electrode 22 g of the second transistor 22 is connected to one of the storage capacitors 24 provided on the second interlayer insulating film 16 by a contact hole that penetrates the first interlayer insulating film 15 and the second interlayer insulating film 16. Are connected to the electrode 24a. The source electrode 22 s of the second transistor 22 is a power source provided on the third interlayer insulating film 17 through a contact hole that penetrates the first interlayer insulating film 15, the second interlayer insulating film 16, and the third interlayer insulating film 17. Connected to line 14.

  The gate electrode 23 g of the third transistor 23 is connected to the lighting control line 13 provided on the first interlayer insulating film 15 by a contact hole penetrating the first interlayer insulating film 15. On the first interlayer insulating film 15, the scanning line 11 is provided in addition to the lighting control line 13. The scanning line 11 is connected to the gate of the first transistor 21 via a contact hole not shown in FIG.

  The source electrode 23 s of the third transistor 23 is a relay provided on the third interlayer insulating film 17 by a contact hole that penetrates the first interlayer insulating film 15, the second interlayer insulating film 16, and the third interlayer insulating film 17. It is connected to the electrode 14c. The relay electrode 14c is covered with the first insulating film 25, and is connected to the relay electrode 106 provided on the first insulating film 25 through the contact hole 25CT.

In the light emitting pixel 20R, the pixel electrode 31R is connected to the relay electrode 106R through a contact hole 28CT2 provided in the second insulating film 26 and the third insulating film 27.
As shown in FIG. 6, the second insulating film 26 and the third insulating film 27 are provided in the light emitting pixel 20R except for the contact region where the pixel electrode 31R and the relay electrode 106R are connected via the contact hole 28CT2. . The first insulating film 25 is provided in the light emitting pixel 20R except for a contact region where the relay electrode 106R and the relay electrode 14c are connected via the contact hole 25CT. The contact hole 28CT2, the relay electrode 106R, and the contact hole 25CT are examples of the “third connection portion” in the present invention. The third connection portion is provided in the third region 28R (the portion having the third layer thickness). The third connection portion is surrounded by the first insulating film 25, the second insulating film 26, and the third insulating film 27. The openings 29R (light emitting regions) are arranged in the Y direction in the third region 28R (third layer thickness portion). The first insulating film 25, the second insulating film 26, and the third insulating film 27 are provided so as to fill the space between the third connection portions. Therefore, there is no step due to the first insulating layer 28 between the opening 29R (light emitting region) and the contact region, and the light emitting region (opening 29R) and the contact region (relay electrode 106G) are compared with the case where there is a step. The distance DY can be reduced. In other words, the opening 29R (light emitting region) can be brought close to the contact region on the right side of FIG. Furthermore, the opening 29R (light emitting region) can be brought closer to the contact region on the left side of FIG. Therefore, the opening 29R (light emitting region) can be enlarged.

In the light emitting pixel 20G, the pixel electrode 31G is connected to the relay electrode 106G via a contact hole 28CT1 provided in the second insulating film 26.
As shown in FIG. 7, the second insulating film 26 is provided in the light emitting pixel 20G except for a contact region where the pixel electrode 31G and the relay electrode 106G are connected via the contact hole 28CT1. The first insulating film 25 is provided in the light emitting pixel 20G except for a region where the relay electrode 106G and the relay electrode 14c are connected through the contact hole 25CT. The contact hole 28CT1, the relay electrode 106G, and the contact hole 25CT are examples of the “second connection portion” and the “fourth connection portion” in the present invention. The second connection portion and the fourth connection portion are provided in the second region 28G (the portion having the second layer thickness). The second connection portion and the fourth connection portion are surrounded by the first insulating film 25 and the second insulating film 26. In the second region 28G (second layer thickness portion), openings 29G (light emitting regions) are arranged in the Y direction. The first insulating film 25 and the second insulating film 26 are provided so as to fill a space between the second connection portion and the fourth connection portion. Accordingly, there is no step due to the first insulating layer 28 between the opening 29G (light emitting region) and the contact region, and there is a step between the light emitting region (opening 29G) and the contact region (relay electrode 106G). The distance DY can be reduced. In other words, the opening 29G (light emitting region) can be brought close to the contact region on the right side of FIG. Furthermore, the opening 29G (light emitting region) can be brought closer to the contact region on the left side of FIG. Therefore, the opening 29G (light emitting region) can be enlarged.

In the light emitting pixel 20B, the pixel electrode 31B is in direct contact with the relay electrode 106B.
As shown in FIG. 8, the first insulating film 25 is provided except for a contact region where the relay electrode 106B and the relay electrode 14c are connected via the contact hole 25CT. The contact hole 25CT and the relay electrode 106B are examples of the “first connection portion” in the present invention. The first connection portion is provided in the first region (the portion having the first layer thickness). The second connection portion is surrounded by the first insulating film 25, the first insulating film 25, and the second insulating film 26. In the first region (the portion having the first layer thickness), the openings 29B (light emitting regions) are arranged in the Y direction. The first insulating film 25 is provided so as to fill the space between the first connection portions. Therefore, there is no step due to the first insulating layer 28 between the opening 29B (light emitting region) and the contact region, and the light emitting region (opening 29B) and the contact region (relay electrode 106G) are compared with the case where there is a step. The distance DY can be reduced. In other words, the opening 29B (light emitting region) can be brought close to the contact region on the right side of FIG. Further, the opening 29R (light emitting region) can be brought closer to the contact region on the left side of FIG. Therefore, the opening 29B (light emitting region) can be enlarged.
On the pixel electrode 31, a second insulating layer 29, a light emitting functional layer 32, a counter electrode 33, a sealing layer 40, and a color filter 50 are sequentially stacked.

"Optical resonance structure"
In the light emitting region (openings 29B, 29G, 29R), the power supply line 14 having light reflectivity, the first insulating layer 28, the pixel electrode 31, the light emitting functional layer 32, the light reflectivity and the light transmissivity are provided. And a counter electrode 33 having a laminated structure. With this configuration, the light emitted from the light emitting functional layer 32 is reciprocated (reflected) between the power supply line 14 and the counter electrode 33 to resonate light having a specific wavelength. Thereby, light of a specific wavelength is intensified as compared with other wavelength regions, and is emitted from the organic EL element 30. Furthermore, light having a specific wavelength is emitted as display light from the power supply line 14 toward the counter electrode 33, that is, from the sealing substrate 70. As described above, the organic EL device 100 has an optical resonance structure including the power supply line 14, the first insulating layer 28, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33, and emits light of a specific wavelength. It has a configuration in which the color purity of light emitted from the light emitting pixels 20 is enhanced selectively.
The outline of the optical resonant structure will be described below.

The first insulating layer 28 has a role of adjusting the optical path length (optical distance) between the power supply line 14 and the counter electrode 33, and the resonance wavelength depends on the film thickness of the first insulating layer 28. It is going to change. Specifically, the optical distance from the power supply line 14 to the counter electrode 33 is D, the phase shift in reflection at the reflection layer is φL, the phase shift in reflection at the counter electrode 33 is φU, and the peak wavelength of the standing wave is λ. When the integer is m, the optical distance D satisfies the following formula (1).
D = {(2πm + φL + φU) / 4π} λ (1)

  The optical distance D in the optical resonance structure of the light-emitting pixels 20B, 20G, and 20R increases in the order of B, G, and R, and the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31 It is adjusted by changing the film thickness.

  As shown in FIG. 6, in the light emitting pixel 20R, the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31R includes the first insulating film 25, the second insulating film 26, and the third insulating film. 27 and has a film thickness Rd1. As shown in FIG. 7, in the light emitting pixel 20G, the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31G is composed of a first insulating film 25 and a second insulating film 26, It has a film thickness Gd1. As shown in FIG. 8, in the light emitting pixel 20B, the first insulating layer 28 disposed between the power supply line 14 and the pixel electrode 31B is composed of the first insulating film 25 and has a film thickness Bd1. Yes. For this reason, the film thickness of the first insulating layer 28 increases in the order of light emitting pixel 20B (film thickness Bd1) <light emitting pixel 20G (film thickness Gd1) <light emitting pixel 20R (film thickness Rd1). For this reason, the optical distance D also increases in the order of the light emitting pixel 20B <the light emitting pixel 20G <the light emitting pixel 20R.

  Specifically, in the light emitting pixel 20R, the optical distance D is set so that the resonance wavelength (peak wavelength at which the luminance is maximum) is 610 nm. Similarly, in the light emitting pixel 20G, the optical distance D is set so that the resonance wavelength (peak wavelength at which the luminance is maximum) is 540 nm. In the light emitting pixel 20B, the optical distance D is set so that the resonance wavelength (the peak wavelength at which the luminance is maximum) is 470 nm.

  In order to realize the peak wavelength, the film thickness of the pixel electrodes 31B, 31G, and 31R made of a transparent conductive film such as ITO is approximately 100 nm, the film thickness of the light emitting functional layer 32 is approximately 110 nm, and m in the above formula (1). = 1, the thickness of the first insulating layer 28 between the reflective layer and the counter electrode 33 is calculated to be 170 nm for the light emitting pixel 20R, 115 nm for the light emitting pixel 20G, and 50 nm for the light emitting pixel 20B. That is, the film thickness Rd1 of the first insulating layer 28 in the light emitting pixel 20R (third region 28R) is approximately 170 nm, and the film thickness Gd1 of the first insulating layer 28 in the light emitting pixel 20G (second region 28G) is approximately. The film thickness Bd1 of the first insulating layer 28 in the light emitting pixel 20B (first region 28B) is approximately 50 nm at 115 nm. The film thicknesses of the first insulating film 25, the second insulating film 26, and the third insulating film 27 are adjusted so that the first insulating layer 28 is formed.

As a result, red (R) light having a peak wavelength of 610 nm is emitted from the light emitting pixel 20R, green (G) light having a peak wavelength of 540 nm is emitted from the light emitting pixel 20G, and peak is 470 nm from the light emitting pixel 20B. Blue (B) light having a wavelength is emitted.
As described above, in the organic EL device 100 according to this embodiment, the color purity of the light emitted from the light emitting pixels 20 can be increased by the above-described optical resonance structure, and a vivid display can be provided.

  As shown in FIG. 6, in the light emitting pixel 20R, a region where the opening 29R is provided is a light emitting region, and a region where the relay electrode 106R is provided is a contact region. The pixel electrode 31R is disposed across the light emitting region and the contact region. Since the film thickness of the first insulating layer 28 in the region where the pixel electrode 31R is disposed is Rd1, the optical distance D is also constant. Therefore, even if the light emitting region (opening 29R) is widened and the distance DY between the light emitting region (opening 29R) and the contact region (relay electrode 106R) is reduced, the optical distance D in the light emitting region is constant. Yes, red (R) light having a peak wavelength of 610 nm is emitted. That is, it is possible to increase the luminous intensity of red (R) light while maintaining the peak wavelength of light emitted from the light emitting region.

  As shown in FIG. 7, in the light emitting pixel 20G, a region where the opening 29G is provided is a light emitting region, and a region where the relay electrode 106G is provided is a contact region. The pixel electrode 31G is disposed across the light emitting region and the contact region. Since the film thickness of the first insulating layer 28 in the region where the pixel electrode 31G is disposed is Gd1, the optical distance D is also constant. Therefore, even if the light emitting region (opening 29G) is widened and the distance DY between the light emitting region (opening 29R) and the contact region (relay electrode 106G) is reduced, the optical distance D in the light emitting region is constant. Yes, green (G) light having a peak wavelength of 540 nm is emitted. In other words, it is possible to increase the luminous intensity of green (G) light while maintaining the peak wavelength of light emitted from the light emitting region.

  As shown in FIG. 8, in the light emitting pixel 20B, a region where the opening 29B is provided is a light emitting region, and a region where the relay electrode 106B is provided is a contact region. The pixel electrode 31B is disposed across the light emitting region and the contact region. Since the film thickness of the first insulating layer 28 in the region where the pixel electrode 31B is disposed is Bd1, the optical distance D is also constant. Therefore, even if the light emitting region (opening 29B) is widened and the distance DY between the light emitting region (opening 29B) and the contact region (relay electrode 106B) is reduced, the optical distance D in the light emitting region is constant. Yes, blue (B) light having a peak wavelength of 470 nm is emitted. That is, it is possible to increase the luminous intensity of blue (B) light while maintaining the peak wavelength of light emitted from the light emitting region.

  For example, in the known technique (Japanese Patent Laid-Open No. 2009-134067), the optical distance in the light emitting region is different from the optical distance in the contact region, and different optical distances exist between the light emitting region and the contact region. Has a boundary. If the light emitting region is widened beyond the boundary, a portion having a different optical distance is generated in the light emitting region, light having a different peak wavelength is emitted from the light emitting region, and the color purity of light emitted from the light emitting region is deteriorated. For this reason, it is difficult for the known technique to widen the light emitting region beyond the boundary.

In the present embodiment, since the optical distance D is constant between the light emitting region and the contact region, the light emitting region can be widened compared to the known technique, and the luminous intensity of light emitted from the light emitting region can be increased.
Thus, the organic EL device 100 according to the present embodiment can provide a bright and vivid display.

  Note that the light emitting region (openings 29B, 29G, 29R) can be widened within a range in which the light emission of the light emitting functional layer 32 is not adversely affected. For example, if there is no adverse effect on the light emission of the light emitting functional layer 32, the light emitting region (openings 29B, 29G, 29R) may be widened so as to overlap at least part of the contact region (relay electrodes 106B, 106G, 106R). Good.

"Method for manufacturing organic EL device"
Next, a method for manufacturing the organic EL device 100 will be described with reference to FIGS. FIG. 9 is a process flow showing a method for manufacturing an organic EL device. 10 and 11 are schematic cross-sectional views corresponding to FIG. 5 and showing the state of the organic EL device after the respective steps shown in FIG. 10 and 11, illustration of pixel circuits and wirings provided below the power supply line 14 in the element substrate 10 is omitted.

  As shown in FIG. 9, the process of manufacturing the organic EL device 100 includes a process of forming the power supply line 14 as a light reflecting layer (step S1), a process of forming the first insulating film 25 (step S2), The step of forming the relay electrode 106 (step S3), the step of forming the second insulating film 26 (step S4), the step of etching the second insulating film 26 (step S5), and the third insulating film 27 are formed. A step (step S6) of etching, a step of etching the third insulating film 27 (step S7), and a step of forming the pixel electrode 31 (step S8).

  In step S1, as shown in FIG. 10A, for example, an aluminum or aluminum alloy film is formed with a film thickness of about 100 nm by sputtering, for example, and this is patterned to connect the power line 14 as a light reflecting layer and the relay. An electrode 14c is formed. As described above, the power supply line 14 is formed on substantially the entire surface of the display region E, and serves as a current supply source for causing the light emitting functional layer 32 to emit light and a light reflecting layer for reflecting light emitted from the light emitting functional layer 32. The power supply line 14 has an opening in the light emitting pixel 20, and a relay electrode 14c is provided in the opening. That is, the power supply line 14 is provided across the plurality of light emitting pixels 20, and the relay electrode 14 c is provided in an island shape on each of the plurality of light emitting pixels 20.

  In step S2, as shown in FIG. 10B, a silicon nitride film having a film thickness of about 50 nm is formed by, for example, plasma CVD, and this is patterned to expose a part of the relay electrode 14c. A first insulating film 25 having the following is formed.

  In step S3, as shown in FIG. 10C, titanium nitride is formed to a thickness of approximately 50 nm by, for example, sputtering, and this is patterned to form the relay electrode 106. The relay electrode 106 is formed so as to cover the opening of the power supply line 14 in plan view, and is connected to the relay electrode 14c through the contact hole 25CT.

  In step S4, silicon oxide is formed with a film thickness of approximately 60 nm to 70 nm by, for example, plasma CVD, and the second insulating film 26 covering the first insulating film 25 and the relay electrode 106 is formed as shown in FIG. Form.

  Subsequently, in step S5, as shown in FIG. 11A, a part of the second insulating film 26 is etched away by, for example, a dry etching method using a fluorine-based gas to form an opening C1. That is, in the first region 28B and the second region 28G corresponding to the opening C1, the second insulating film 26 is not provided, and the second region 28R in which the opening C1 is not formed is the second insulating film. 26 is provided. Here, a contact hole 28CT2 that exposes a part of the relay electrode 106R in the third region 28R is formed.

  Here, since the first insulating film 25 is made of silicon nitride and the second insulating film 26 is made of silicon oxide, the etching selectivity between the first insulating film 25 and the second insulating film 26 is high. There is. In the regions corresponding to the light emitting regions of the first region 28B and the second region 28G, the etching rate is reduced when the first insulating film 25 is exposed, and ideally, the etching stops. Further, in the contact region of the third region 28R, the contact hole 28CT2 is formed, and when the surface of the relay electrode 106R is exposed, the etching rate is reduced and ideally the etching is stopped. Similarly, in the contact region of the first region 28B and the second region 28G, the surface of the relay electrode 106B and the relay electrode 106G is exposed and the first insulating film 25 is exposed around the surface, and the etching rate is reduced. Ideally, the etching stops.

  Subsequently, in step S6, as shown in FIG. 11B, a third insulating film 27 is formed by depositing silicon oxide with a film thickness of approximately 60 nm to 70 nm by, for example, plasma CVD. Here, the third insulating film 27 is stacked on the first insulating film 25 in regions corresponding to the light emitting regions of the first region 28B and the second region 28G, and the first region 28B and the second region are stacked. In the contact region of 28G, it is laminated on the surface of the relay electrode 106B and the relay electrode 106G. Further, the region corresponding to the light emitting region of the third region 28R is stacked on the second insulating film 26, and the contact region of the third region 28R is stacked on the relay electrode 106R and the second insulating film 26. . That is, the third insulating film 27 is formed in the contact hole 28CT2 provided in the second insulating film 26.

  In step S7, as shown in FIG. 11C, the silicon oxide (third insulating film 27) is removed by etching in the opening C1 by, for example, a dry etching method using a fluorine-based gas, and the opening C1 is opened. C2 is formed. That is, the opening C <b> 2 is provided in the third insulating film 27. In the first insulating layer 28 in the opening C2, the first insulating film 25 is stacked on the power supply line 14, and has a film thickness Bd1. In the first insulating layer 28 of the opening C1 in the portion where the opening C2 is not formed, the first insulating film 25 and the second insulating film 26 are stacked on the power supply line 14 and have a film thickness Gd1. Therefore, the opening C2 becomes the first region 28B. Further, in the opening C1 where the opening C2 is not formed, the first insulating film 25 and the second insulating film 26 are stacked on the power supply line 14 and have a film thickness Gd1. Therefore, the portion of the opening C1 where the opening C2 is not formed becomes the second region 28G. In the first insulating layer 28 in the region where the opening C1 is not formed, the first insulating film 25, the second insulating film 26, and the third insulating film 27 are stacked on the power supply line 14 and have a film thickness Rd1. doing. Therefore, the region where the opening C1 is not formed becomes the third region 28R. The opening C1 corresponds to the first region 28B and the second region 28G.

In step S7, a contact hole 28CT1 exposing a part of the relay electrode 106G in the second region 28G and a contact hole 28CT2 exposing a part of the relay electrode 106R in the third region 28R are formed at the same time.
Here, since the first insulating film 25 is made of silicon nitride and the third insulating film 27 is made of silicon oxide, the etching selectivity between the first insulating film 25 and the third insulating film 27 is high. There is. In the region corresponding to the light emitting region of the first region 28B, the etching rate is reduced when the first insulating film 25 is exposed, and ideally the etching stops.
In the contact region of the third region 28R, a contact hole 28CT2 is formed to expose the surface of the relay electrode 106R, and in the contact region of the second region 28G, a contact hole 28CT1 is formed to expose the surface of the relay electrode 106G. At this point, the etching rate becomes slow, and ideally the etching stops. Similarly, in the contact region of the first region 28B, when the surface of the relay electrode 106B is exposed and the first insulating film 25 is exposed around the surface of the relay electrode 106B, the etching rate is reduced and ideally the etching is stopped.

In step S8, as shown in FIG. 11D, ITO is formed to a film thickness of approximately 100 nm by, for example, sputtering, and this is patterned to form the pixel electrode 31. In the first region 28B, a pixel electrode 31B that is in direct contact with the relay electrode 106B is formed. In the second region 28G, a pixel electrode 31G connected to the relay electrode 106G through the contact hole 28CT1 is formed. In the third region 28R, a pixel electrode 31R connected to the relay electrode 106R through the contact hole 28CT2 is formed.
Thereafter, the method includes a step of forming a second insulating layer 29 that defines a light emitting region of the light emitting pixel 20, a step of forming a light emitting functional layer 32, and a step of forming a counter electrode 33.
With the above manufacturing method, the organic EL device 100 according to the present embodiment can be stably manufactured.

(Embodiment 2)
"Outline of organic EL device"
FIG. 12 corresponds to FIG. 4 and is a schematic cross-sectional view showing a configuration of the organic EL device according to the second embodiment, that is, a schematic cross-sectional view of a region provided with an opening of a second insulating layer that defines a light emitting region. . FIG. 13 corresponds to FIG. 5 and is another schematic cross-sectional view showing the configuration of the organic EL device according to the second embodiment, that is, a schematic cross-sectional view of a region where the pixel electrode and the third transistor are electrically connected. .
Hereinafter, with reference to FIG. 12 and FIG. 13, an outline of the organic EL device 200 according to the present embodiment will be described focusing on differences from the first embodiment. In addition, about the component same as Embodiment 1, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

In the organic EL device 200 according to this embodiment, the configuration of the first insulating layer 28 is different from that of the first embodiment, and other configurations are the same as those of the first embodiment.
As shown in FIG. 12, the first insulating layer 28 is an optical distance adjusting layer disposed between the power supply line 14 serving as a light reflecting layer and the pixel electrode 31. The first insulating layer 28 includes a first insulating film 25 and an organic insulating layer 61 that are sequentially stacked from the power supply line 14 side.

  The first insulating film 25 has the same configuration as that of the first embodiment, and is silicon nitride having a thickness of approximately 50 nm.

  The organic insulating layer 61 includes a first organic insulating film 61a and a second organic insulating film 61b that are sequentially stacked from the first insulating film 25 side. The first organic insulating film 61a and the second organic insulating film 61b are made of an acrylic resin and have substantially the same refractive index as the second insulating film 26 and the third insulating film 27 (silicon oxide) in the first embodiment. Therefore, the first organic insulating film 61a has the same film thickness as the second insulating film 26 in the first embodiment, that is, the same optical distance (product of refractive index and film thickness). The second organic insulating film 61b has the same film thickness as the third insulating film 27 in the first embodiment, that is, the same optical distance (product of refractive index and film thickness). Specifically, the film thicknesses of the first organic insulating film 61a and the second organic insulating film 61b are approximately 60 nm to 70 nm, respectively.

  The first organic insulating film 61a and the second organic insulating film 61b may be any resin having optical transparency. In addition to the acrylic resin described above, polyester, methacrylic resin, methacrylic acid-maleic acid copolymer, polystyrene, Transparent fluororesin, polyimide, fluorinated polyimide, polyamide, polyamideimide, polyetherimide, cellulose acylate, polyurethane, polyetheretherketone, polycarbonate, alicyclic polyolefin, polyarylate, polyethersulfone, polysulfone, fluorene ring-modified polycarbonate , Alicyclic modified polycarbonate, fluorene ring modified polyester, acryloyl compound, polysiloxane, and other organosilicon compounds can be used.

  When the refractive indexes of the first organic insulating film 61a and the second organic insulating film 61b are different from the refractive indexes of the second insulating film 26 and the third insulating film 27 in the first embodiment, the second insulating film 26 in the first embodiment. In addition, it is necessary to adjust the film thicknesses of the first organic insulating film 61a and the second organic insulating film 61b so that the optical distance is substantially the same as that of the third insulating film 27.

  The organic insulating layer 61 includes a portion 62 where the first organic insulating film 61a is disposed, and a portion 63 where the first organic insulating film 61a and the second organic insulating film 61b are disposed (laminated). The first insulating layer 28 of the light emitting pixel 20B, that is, the first insulating layer 28 in the first region 28B is composed of the first insulating film 25 and has a film thickness Bd1 (approximately 50 nm). The first insulating layer 28 of the light emitting pixel 20G, that is, the first insulating layer 28 in the second region 28G, includes a first insulating film 25 and a first organic insulating film 61a (a portion where the first organic insulating film 61a is disposed). 62 organic insulating layer 61), and has a film thickness Gd1 (approximately 115 nm). The first insulating layer 28 of the light emitting pixel 20R, that is, the first insulating layer 28 in the third region 28R includes the first insulating film 25, the first organic insulating film 61a, and the second organic insulating film 61b (first organic insulating film 61b). The insulating film 61a and the organic insulating layer 61 in the portion 63 where the second organic insulating film 61b is disposed have a film thickness Rd1 (approximately 170 nm). Thus, the portion 62 where the first organic insulating film 61a is disposed corresponds to the second region 28G. A portion 63 where the first organic insulating film 61a and the second organic insulating film 61b are disposed corresponds to the third region 28R.

  The portion 62 where the first organic insulating film 61 a is disposed is an example of the “first flat portion” in the present invention, and is hereinafter referred to as the first flat portion 62. The portion 63 where the first organic insulating film 61a and the second organic insulating film 61b are arranged is an example of the “second flat portion” in the present invention, and is hereinafter referred to as a second flat portion 63.

  With this configuration, the light emitted from the light emitting functional layer 32 is reciprocated between the power supply line 14 and the counter electrode 33 to resonate (amplify) the light having the specific wavelength, and to transmit the light having the specific wavelength to the sealing substrate 70. Can be emitted as display light. As a result, red (R) light having a peak wavelength of 610 nm is emitted from the light emitting pixel 20R, green (G) light having a peak wavelength of 540 nm is emitted from the light emitting pixel 20G, and peak is 470 nm from the light emitting pixel 20B. Blue (B) light having a wavelength is emitted.

"Outline of contact part"
Next, an outline of a portion (contact portion) where the pixel electrode 31 and the third transistor 23 are electrically connected will be described with reference to FIG.

  As shown in FIG. 13, in the light emitting pixel 20B, the pixel electrode 31B is in direct contact with the relay electrode 106B and has the same configuration as that of the first embodiment.

  In the light emitting pixel 20G, the first organic insulating film 61a (the organic insulating layer 61 of the first flat portion 62) is provided between the relay electrode 106G and the pixel electrode 31G. The first organic insulating film 61a is provided with a contact hole 28CT1 that exposes a part of the relay electrode 106G. The pixel electrode 31G is connected to the relay electrode 106G through the contact hole 28CT1.

  In the light emitting pixel 20R, the first organic insulating film 61a and the second organic insulating film 61b (the organic insulating layer 61 of the second flat portion 63) are provided between the relay electrode 106R and the pixel electrode 31R. A contact hole 28CT2 that exposes a part of the relay electrode 106R is provided in the first organic insulating film 61a and the second organic insulating film 61b. The pixel electrode 31R is connected to the relay electrode 106R through the contact hole 28CT2.

  Also in this embodiment, since the film thickness of the first insulating layer 28 that is an optical distance adjustment layer is constant in each of the light emitting pixels 20B, 20G, and 20R, a known technique (Japanese Patent Laid-Open No. 2009-134067). The effect similar to that of the first embodiment can be obtained in that the light emitting region (openings 29B, 29G, 29R) can be widened as compared with the publication.

"Method for manufacturing organic EL device"
Next, a method for manufacturing the organic EL device 200 will be described with reference to FIGS. FIG. 14 is a process flow showing the method for manufacturing the organic EL device. 15 and 16 correspond to FIGS. 10 and 11 and are schematic cross-sectional views showing the state of the organic EL device after the respective steps shown in FIG.

  As shown in FIG. 14, the process of manufacturing the organic EL device 200 includes a process of forming the power supply line 14 as a light reflection layer (Step S11), a process of forming the first insulating film 25 (Step S12), The step of forming the relay electrode 106 (step S13), the step of forming the first organic insulating film 61a (step S14), the step of forming the second organic insulating film 61b (step S15), and the pixel electrode 31 are formed. (Step S16).

  Note that step S11 is the same as step S1 in the first embodiment, step S12 is the same as step S2 in the first embodiment, step S13 is the same as step S3 in the first embodiment, and step S16 is the first embodiment. Same as step S9 in FIG.

  In step S11, as shown in FIG. 15A, the power supply line 14 and the relay electrode 14c are formed.

  In step S12, as shown in FIG. 15B, a first insulating film 25 having a contact hole 25CT exposing a part of the relay electrode 14c is formed.

  In step S13, as shown in FIG. 15C, the relay electrode 106 is formed so as to overlap the relay electrode 14c in plan view.

  In step S14, as shown in FIG. 16A, for example, a photosensitive acrylic resin is applied, heat treatment (pre-baking), exposure, development, curing treatment, and the like are performed to cover the first insulating film 25 and the relay electrode 106. 1 The organic insulating film 61a is formed. The photosensitive acrylic resin is a negative type resist, the exposed portion is cured, and the unexposed portion is dissolved in the developer. The first organic insulating film 61a is formed in the region 65 from the second region 28G to the third region 28R, and exposes a contact hole 28CT1 that exposes a part of the relay electrode 106G and a part of the relay electrode 106R. Contact hole 28CT2a.

In step S15, as shown in FIG. 16B, the same material (photosensitive acrylic resin) as in step S14 is applied, heat treatment (pre-baking), exposure, development, curing treatment, and the like are performed, and the second organic insulating film 61b. Form. The second organic insulating film 61b is formed on the first organic insulating film 61a in the third region 28R. That is, the second organic insulating film 61b is stacked on the first organic insulating film 61a to form the second flat portion 63. A portion of the first organic insulating film 61 a where the second organic insulating film 61 b is not stacked serves as the first flat portion 62.
The second organic insulating film 61b has a contact hole 28CT2b that exposes a part of the relay electrode 106R. A contact hole 28CT2 exposing a part of the relay electrode 106R is formed by the contact hole 28CT2a provided in the first organic insulating film 61a and the contact hole 28CT2b provided in the second organic insulating film 61b.

  In step S16, as shown in FIG. 16C, the pixel electrode 31B that is in direct contact with the relay electrode 106B is formed in the first region 28B, and the pixel electrode 31G that is connected to the relay electrode 106G through the contact hole 28CT1 is formed. A pixel electrode 31R formed in the second region 28G and connected to the relay electrode 106R through the contact hole 28CT2 is formed in the third region 28R.

  In the present embodiment, the first organic insulating film 61a corresponding to the second insulating film 26 of the first embodiment and the second organic insulating film 61b corresponding to the third insulating film 27 of the first embodiment are negative resist (photosensitive Steps such as film formation and etching necessary for forming the second insulating film 26 and the third insulating film 27 of the first embodiment are omitted because they are formed by a photolithography process using an acrylic resin. Therefore, as compared with the first embodiment, the manufacturing process of the first insulating layer 28 is simplified, the productivity of the organic EL device 200 can be improved, and the manufacturing cost of the organic EL device 200 can be reduced.

(Embodiment 3)
"Electronics"
FIG. 17 is a schematic diagram of a head mounted display as an example of an electronic apparatus.
As shown in FIG. 17, the head mounted display 1000 has two display units 1001 provided corresponding to the left and right eyes. The observer M can see characters and images displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like glasses. For example, if an image in consideration of parallax is displayed on the left and right display units 1001, a stereoscopic video can be viewed and enjoyed.

  The display unit 1001 includes the organic EL device 100 according to the first embodiment or the organic EL device 200 according to the second embodiment. Since the organic EL device 100 and the organic EL device 200 have an optical resonance structure, the color purity of light emitted from the light emitting pixels 20B, 20G, and 20R is increased. Furthermore, in the organic EL device 100 and the organic EL device 200, since the light emitting region (openings 29B, 29G, 29R) is wide, a bright and vivid display is provided. Therefore, it is possible to provide a head-mounted display 1000 with a bright and vivid display.

  The electronic device on which the organic EL device 100 or the organic EL device 200 is mounted is not limited to the head mounted display 1000. For example, it may be mounted on an electronic device having a display unit such as a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, or a navigator. Further, the present invention is not limited to the display unit, and the present invention can be applied to an illumination device and an exposure device.

The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. An electronic device in which the device is mounted is also included in the technical scope of the present invention.
Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(Modification 1) FIG. 18 is a schematic plan view showing a configuration of an organic EL device according to Modification 1. As shown in the drawing, in the organic EL device 300 according to this modification, the first region 28B, the second region 28G, and the third region 28R have a rectangular shape extending in the X direction. . As described above, the first region 28B, the second region 28G, and the third region 28R are not limited to the rectangular shape (the first embodiment) extending in the Y direction, for example, the rectangular shape extending in the X direction. It may be a shape.
In the organic EL device according to Modification 1, the Y direction is an example of the “first direction” in the present invention, and the X direction is an example of the “second direction” in the present invention. In the X direction, light emitting pixels 20 that can emit light of the same color are arranged. That is, the light emitting pixels 20B that can emit blue (B) light are arranged in the X direction and have a rectangular shape (stripe shape). The light emitting pixels 20G from which green (G) light emission is obtained are arranged in the X direction and have a rectangular shape (stripe shape). The light emitting pixels 20R that can emit red (R) light are disposed in the X direction and have a rectangular shape (stripe shape). In the Y direction, light emitting pixels 20 that can emit light of different colors are repeatedly arranged in the order of B, G, and R. The arrangement of the light emitting pixels 20 in the Y direction may not be in the order of B, G, and R, and may be in the order of R, G, and B, for example.

  (Modification 2) FIG. 19 is a schematic plan view showing the configuration of an organic EL device according to Modification 2. As shown in the figure, in the organic EL device 400 according to this modification, the light emitting pixels 20G are arranged along the Y direction, and the light emitting pixels 20B and the light emitting pixels 20R are alternately arranged along the Y direction. One light emitting pixel 20G, one light emitting pixel 20B, and one light emitting pixel 20R constitute a display unit P. As described above, by configuring the display unit P with the four light emitting pixels 20, a finer display is possible as compared with the case where the display unit P is configured with the three light emitting pixels 20.

  The second region 28G in which the light emitting pixel 20G is arranged has a rectangular shape extending in the Y direction. The first region 28B has substantially the same shape as the light emitting pixel 20B, and the third region 28R has the same shape as the light emitting pixel 20R. The first regions 28B and the third regions 28R are alternately arranged along the Y direction.

As described above, the region where the light emitting pixel 20B is disposed is the first region 28B, the region where the light emitting pixel 20G is disposed is the second region 28G, and the region where the light emitting pixel 20R is disposed is the third region. 28R. For this reason, the arrangement of the first region 28B, the second region 28G, and the third region 28R changes corresponding to the arrangement of the light emitting pixels 20B, 20G, and 20R.
For example, if the light emitting pixels 20B, 20G, and 20R have a stripe arrangement, the arrangement of the first region 28B, the second region 28G, and the third region 28R is as shown in the first and second embodiments. Such an arrangement (see FIGS. 1 and 18) is obtained. For example, if the light emitting pixels 20B, 20G, and 20R have a zigzag arrangement, the arrangement of the first region 28B, the second region 28G, and the third region 28R is also a zigzag arrangement.

  (Modification 3) The organic insulating layer 61 is not limited to being composed of two organic insulating films (the first organic insulating film 61a and the second organic insulating film 61b), but is composed of one organic insulating film. Also good. For example, a positive-type photosensitive resin is subjected to multi-tone exposure with different exposure amounts for each region using a multi-tone exposure mask, and regions having different film thicknesses (first flat portion 62, second flat portion). The organic insulating layer 61 may be formed by a method of forming the portion 63 and the contact holes 28CT1 and 28CT2) at a time. As the positive photosensitive resin, for example, an alkali-soluble resin (such as a novolac resin) in which a photosensitive material (such as a naphthoquinone diazide-substituted compound) is dispersed can be used. By forming the organic insulating layer 61 with one organic insulating film, productivity can be improved. The organic insulating layer 61 may be composed of three or more organic insulating films.

  (Modification 4) The second organic insulating film 61a and the second organic insulating film 61b are not limited to being formed by a photolithography process using a negative resist (photosensitive resin). For example, you may form by methods, such as a printing method and an inkjet method. Similarly, the organic insulating layer 61 according to Modification 3 may be formed by a method such as a printing method or an ink jet method.

  (Modification 5) The first insulating film 25 may be made of an organic material, that is, all of the first insulating layer 28 may be made of an organic material. For example, the first insulating film 25 may be formed by a photolithography process using the same organic material (photosensitive acrylic resin) as in the second embodiment. Productivity can be improved by changing the material constituting the first insulating film 25 from an inorganic material (silicon nitride) to an organic material (photosensitive acrylic resin) and patterning only by a photolithography process.

  DESCRIPTION OF SYMBOLS 10 ... Element substrate, 10a ... Insulating film, 10d ... Ion implantation part, 10s ... Base material, 10w ... Well part, 11 ... Scan line, 12 ... Data line, 13 ... Lighting control line, 14 ... Power supply line, 14c ... Relay Electrode, 15 ... first interlayer insulating film, 16 ... second interlayer insulating film, 17 ... third interlayer insulating film, 20, 20B, 20G, 20R ... light emitting pixel, 21 ... first transistor, 21d ... drain electrode, 22 ... Second transistor, 22g ... gate electrode, 22s ... source electrode, 23 ... third transistor, 23g ... gate electrode, 23s ... source electrode, 24 ... storage capacitor, 24a ... one electrode, 24b ... other electrode, 25 ... first DESCRIPTION OF SYMBOLS 1 insulating film, 26 ... 2nd insulating film, 27 ... 3rd insulating film, 28 ... 1st insulating layer, 28B ... 1st area | region, 28G ... 2nd area | region, 28R ... 3rd area | region, 29 ... 3rd 2 insulating layers, 29 Opening (light emitting pixel 20B), 29G ... Opening (light emitting pixel 20G), 29R ... Opening (light emitting pixel 20R), 30 ... Organic EL element, 31, 31B, 31G, 31R ... Pixel electrode, 32 ... Light emitting functional layer, 33 Reference electrode, 40 ... sealing layer, 41 ... first sealing layer, 42 ... buffer layer, 43 ... second sealing layer, 50 ... color filter, 50B, 50G, 50R ... colored layer, 61 ... organic insulating layer , 61a ... first organic insulating film, 61b ... second organic insulating film, 62 ... first flat portion, 63 ... second flat portion, 71 ... resin layer, 70 ... sealing substrate, 100, 200, 300, DESCRIPTION OF SYMBOLS 400 ... Organic EL device, 101 ... Data line drive circuit, 102 ... Scanning line drive circuit, 103 ... External connection terminal, 106 ... Relay electrode

Claims (4)

Transistors,
A light reflecting layer provided above the transistor;
A first insulating film provided on the light reflecting layer;
A first conductive layer provided on the first insulating film;
A first pixel electrode provided on the first conductive layer and having light transmission;
A second conductive layer provided on the first insulating film;
A second pixel electrode provided on the second conductive layer and having light transmission;
A third conductive layer provided on the first insulating film;
A third pixel electrode provided on the third conductive layer and having light transmission;
A light emitting functional layer that covers the first pixel electrode, the second pixel electrode, and the third pixel electrode;
A counter electrode covering the light emitting functional layer and having light reflectivity and light transmissivity;
Have
The first pixel electrode is provided in direct contact with the first conductive layer, a second insulating film is provided between the second pixel electrode and the second conductive layer, and the third pixel electrode And the second conductive film and the third conductive film are provided between the second conductive film and the third conductive layer,
The first pixel electrode is connected to a first transistor through the first conductive layer, the second pixel electrode is connected to a second transistor through the second conductive layer, and The light emitting device according to claim 3, wherein the third pixel electrode is connected to the third transistor through the third conductive layer . 2. The light emitting device according to claim 1, wherein the second pixel electrode is connected to the second conductive layer through a first contact hole penetrating the second insulating film . The third pixel electrode, to claim 1 or 2, characterized in that via the second contact hole penetrating the second insulating film and said third insulating film being connected to said third conductive layer The light emitting device described. An electronic apparatus comprising the light emitting device according to claim 1.

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