JP6215769B2 - Wafer level optical semiconductor device manufacturing method and optical semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a method for manufacturing a member for a wafer level optical semiconductor device that contributes to miniaturization and cost reduction of an optical semiconductor device typified by an LED, and manufacturing an optical semiconductor device using the member manufactured by the manufacturing method. The present invention relates to a method and an optical semiconductor device manufactured by the manufacturing method.

  Since an optical semiconductor element such as an LED has an excellent characteristic of low power consumption, in recent years, the application of the optical semiconductor element to outdoor lighting applications and automobile applications has increased. On the other hand, it has been estimated that the surface temperature of the optical semiconductor element during driving reaches 150 degrees due to an increase in the amount of heat generated from the optical semiconductor element with higher brightness. Under such circumstances, in order to improve the characteristics and extend the life of the optical semiconductor device, it is particularly important to select the heat resistance and light resistance of the constituent members of the optical semiconductor device and to ensure heat dissipation.

  Conventionally, as a mounting substrate for an optical semiconductor device with high heat dissipation and weather resistance, a substrate in which a ceramic and a metal are laminated is generally used in view of excellent heat dissipation characteristics (for example, Patent Document 1, Since the processing and moldability of the ceramic is not good, it is expensive in terms of processing cost and material cost. In addition, since the ceramic substrate is manufactured by firing, it is difficult to achieve precise dimensional accuracy, and for this reason, it is difficult to reduce the thickness and cost.

  As a substrate for an optical semiconductor device that replaces a ceramic substrate, a substrate for an optical semiconductor device in which a thermosetting resin composition layer for light reflection is formed by transfer molding on a lead frame substrate obtained by processing a metal having good thermal conductivity. Has been proposed (see, for example, Patent Documents 3 to 5). However, in this method, since a resin layer (reflector) having a cup shape (concave shape) is formed by transfer molding, there are problems such as heat resistance and light resistance of the resin layer and corrosion of the metal material constituting the lead frame. It is insufficient in terms of high heat resistance, high light resistance, and high reliability. In addition, as a process of manufacturing an optical semiconductor device, there are many processes as represented by mounting an optical semiconductor element, wire bonding, sealing with a sealing resin, and heat curing.

  On the other hand, the resin composition is not formed in the gap between the first lead for mounting the optical semiconductor element and the second lead electrically connected to the optical semiconductor element without forming the concave reflector. There has been proposed a surface-mount type optical semiconductor device substrate having a substantially planar structure filled and cured (for example, see Patent Document 6). A surface-mount type optical semiconductor device substrate that does not have such a reflector structure and has a substantially planar structure may be called a flat frame. After mounting an optical semiconductor element on the flat frame and electrically connecting it using wire bonding, etc., a lens is molded by transfer molding, etc., and a planar mounting board arranged in a matrix in the dicing process is placed for each device. Although the method of dividing into two is also known, in this method, the process is complicated, and there are many industrial problems such as product accuracy, manufacturing cost, and productivity.

  On the other hand, since optical semiconductor devices such as LEDs are used in outdoor lighting applications and automobile applications, they are exposed to the outside air, so that they are provided to enhance light reflectivity by sulfur oxides in the atmosphere, so-called SOx. There is a problem that the silver plating, silver electrode, and the like that are formed are blackened by sulfuration. Discoloration of the silver plating, silver electrode, etc. having a high reflectivity to black means that the light reflectivity is remarkably lowered, which directly leads to a decrease in light extraction efficiency from the optical semiconductor device. Therefore, silver plating, protection of silver electrodes, that is, ensuring sulfidation resistance as an entire optical semiconductor device is becoming increasingly important.

  Under such circumstances, the above-described invention using a lead frame substrate obtained by processing a metal usually has silver plating applied to the surface of the lead frame in order to improve the light reflectivity of the substrate surface. How to provide prevention remains a challenge, and we are still searching for effective solutions, leading to an increase in development time and development costs.

  Patent Document 7 discloses a semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device that are easy to manufacture by reducing the types of members in reducing the size of the package. The LED device includes an LED element having a sapphire substrate and a protruding electrode. A phosphor sheet is disposed on the upper surface, the phosphor sheet and the sapphire substrate are bonded with an adhesive layer, the side of the LED element is covered with a white reflective member, and the protruding electrode of the LED element is connected to the mother substrate. A structure is proposed. However, such a white reflective member is manufactured through a filling process after the surroundings are surrounded by a dam material, resulting in variations in product characteristics due to the filling process. In addition, the number of constituent members is still large, the process is complicated, and there are many industrial problems such as manufacturing cost and productivity.

JP 2011-071554 A JP 2011-181550 A Japanese Patent No. 4608294 JP 2007-235085 A JP2011-009519A JP 2011-222870 A JP 2012-227470 A

  The present invention has been made in view of the above problems, and can greatly reduce the types of members, and does not require special protection for preventing sulfidation of silver plating. Wafers that can easily manufacture optical semiconductor devices that can withstand driving, have high dimensional accuracy, have little unevenness and variation in emission color, and can easily manage product characteristics after manufacturing. A method for manufacturing a member for level optical semiconductor devices, a method for manufacturing an optical semiconductor device using a member for wafer level optical semiconductor devices manufactured by the manufacturing method, and an optical semiconductor device manufactured by the manufacturing method Objective.

In order to solve the above problems, in the present invention, in a method for producing a member for a wafer level optical semiconductor device in which a plurality of optical semiconductor elements are held by a light transmissive member via a thermosetting resin,
(I) a step of mounting the electrode surfaces of a plurality of optical semiconductor elements so as to face the pressure-sensitive adhesive sheet side on the pressure-sensitive adhesive sheet surface of the support substrate provided with the pressure-sensitive adhesive sheet on one side;
(Ii) supplying a thermosetting resin composition between the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the support substrate is mounted and the light transmissive member, and the thermosetting with the support substrate and the light transmissive member. A cured product of the thermosetting resin composition on the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the supporting substrate is mounted by molding and curing the thermosetting resin composition with the adhesive resin composition sandwiched therebetween. And obtaining a laminate in which the light transmissive member is laminated,
(Iii) a step of peeling the support substrate and the pressure-sensitive adhesive sheet from the laminate,
A method comprising:
In the step (i) or the step (ii), a wafer in which a light reflecting member including a light reflecting thermosetting resin and having a hardness of Shore D of 20 or more is installed in a portion corresponding to a dicing line that is a device outer peripheral portion. A method of manufacturing a member for a level optical semiconductor device is provided.

  With such a method for manufacturing a wafer level optical semiconductor device member, it is possible to greatly reduce the type of member, and high output without requiring special protection to prevent silver plating sulfidation. It is possible to easily manufacture an optical semiconductor device that can withstand the driving of optical semiconductor elements, has high dimensional accuracy of the product, has little unevenness and variation in emission color, and can easily manage product characteristics after manufacturing. The member for wafer level optical semiconductor devices that can be manufactured can be manufactured.

  At this time, in the step (i), before mounting the optical semiconductor element on the pressure-sensitive adhesive sheet surface, after mounting the optical semiconductor element, or simultaneously with mounting the optical semiconductor element, the light reflecting member is You may install in the adhesive sheet surface, and in the said process (ii), you may install the said light reflection member in the surface which contact | connects the said thermosetting resin composition of the said light transmissive member.

  Further, at this time, as the light reflecting member, one containing at least one light reflecting thermosetting resin selected from silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylate resin, and urethane resin is used. Is preferred.

  If it contains such resin, it is suitable as a light reflection member used for this invention.

  Further, at this time, as the light reflecting member, one containing either or both of an inorganic filler and a diffusing material is used, and the inorganic filler is silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, carbonic acid. Preferably, the diffusion material is at least one selected from magnesium and barium carbonate, and the diffusion material is at least one selected from barium titanate, titanium oxide, aluminum oxide, and silicon oxide.

  By including such a filler or diffusing material, the light reflecting member is excellent in hardness, heat resistance, weather resistance, and light resistance, and also has good thermal conductivity, moldability, and flame retardancy.

  Further, at this time, as the thermosetting resin composition, it is preferable to use a composition containing at least one resin selected from silicone resins, organically modified silicone resins, epoxy resins, modified epoxy resins, acrylate resins, and urethane resins. .

  Any resin containing such a resin is suitable as a sealing resin for an optical semiconductor element.

  Moreover, it is preferable to use what contains the fluorescent substance particle for the purpose of wavelength conversion from the said optical semiconductor element as the said thermosetting resin composition at this time.

  As described above, by including the phosphor particles, it is possible to efficiently convert the wavelength of light emitted from the optical semiconductor element into light having a target wavelength.

  Further, at this time, as the thermosetting resin composition, one containing at least one filler selected from silicone, silica, alumina, zirconia, and titania is used, and the amount of the filler added is the thermosetting resin. It is preferably more than 0 volume part and 90 volume parts or less with respect to 100 volume parts of the resin component in the composition.

  By including such a filler, it becomes a thermosetting resin composition that is excellent in hardness after curing, heat resistance, weather resistance, and light resistance, and also has excellent thermal conductivity, moldability, and flame retardancy.

  Further, at this time, as the light transmissive member, an inorganic material selected from glass, quartz, and sapphire, a resin material selected from silicone resin, organically modified silicone resin, epoxy resin, modified epoxy resin, acrylate resin, and urethane resin It is preferable to use one containing at least one selected.

  Such a material is suitable as a light-transmitting member used in the present invention.

  At this time, it is preferable to use a material containing phosphor particles for the purpose of wavelength conversion from the optical semiconductor element as the light transmissive member.

  As described above, by including the phosphor particles, it is possible to efficiently convert the wavelength of light emitted from the optical semiconductor element into light having a target wavelength.

  At this time, as the light transmissive member, a material containing one or more fillers selected from silicone, silica, alumina, zirconia, and titania is used, and the amount of the filler added is the material of the light transmissive member. It is preferable that it is more than 0 volume part and 90 volume parts or less with respect to 100 volume parts of compositions.

  By including such a filler, the light transmissive member is excellent in hardness, heat resistance, weather resistance, and light resistance, and also has good thermal conductivity, moldability, and flame retardancy.

  At this time, the thermosetting resin composition is preferably molded by compression molding using a compression molding machine having a release film on the surface in contact with the light transmissive member.

  Thus, if it is compression molding, a thermosetting resin composition can be shape | molded easily and reliably.

The present invention also provides a method for manufacturing an optical semiconductor device,
A circuit for connecting the optical semiconductor element to a mounting substrate, or solder connection to the electrode surface of each optical semiconductor element of the wafer level optical semiconductor device member obtained by the method for manufacturing a wafer level optical semiconductor device member Provided is a method of manufacturing an optical semiconductor device in which a bonding pad for flip chip connection is formed and then diced into individual pieces.

More specifically, the manufacturing method of the optical semiconductor device,
(Iv) forming a seed layer after performing roughening by etching on the surface of the wafer level optical semiconductor device member where the optical semiconductor element is exposed;
(V) forming a plating resist film on the surface on which the seed layer is formed, performing development after exposure using a photomask, and forming an opening on the electrode surface of each optical semiconductor element;
(Vi) A circuit for connecting the optical semiconductor element to the mounting substrate using an electrolytic plating method or an electroless plating method, or a bonding pad for solder connection or flip chip connection on the surface where the opening is formed. After forming, removing the plating resist film, and subsequently removing unnecessary portions of the seed layer that appeared on the surface after peeling of the plating resist film by etching;
(Vii) a step of dicing into individual pieces,
It is preferable to have.

  With such a method of manufacturing an optical semiconductor device, the types of members can be greatly reduced, and a high-output optical semiconductor element is required without requiring special protection for prevention of sulfidation of silver plating. It is possible to easily manufacture an optical semiconductor device that can withstand driving, has high dimensional accuracy of the product, has less unevenness and variation in emission color, and can easily manage product characteristics after manufacturing.

  Furthermore, the present invention provides an optical semiconductor device manufactured by the above-described optical semiconductor device manufacturing method.

  Such an optical semiconductor device has few types of members, can withstand driving of high-output optical semiconductor elements without requiring special protection for preventing silver plating sulfidation, and has dimensional accuracy. Therefore, the optical semiconductor device is easy to manage the product characteristics with little unevenness and variation in emission color.

  Further, at this time, it has a circuit for connecting to the mounting substrate and a bonding pad for solder connection or flip chip connection, and two or more optical semiconductor elements may be electrically connected. it can.

As mentioned above, if it is a manufacturing method of the member for wafer level optical semiconductor devices of this invention, and the manufacturing method of the optical semiconductor device of this invention using the member for wafer level optical semiconductor devices manufactured by this, if it is an optical semiconductor It is possible to drastically reduce the types of members when making the device thinner and smaller, and it is not necessary to use silver-plated members. A highly reliable optical semiconductor device that has high light resistance and therefore can withstand driving of a high-output optical semiconductor element can be easily manufactured at low cost. Furthermore, it is possible to manufacture in a lump in a state in which the output and wavelength of the optical semiconductor element are selected in advance, and management of product characteristics after manufacture becomes easy. That is, in a semiconductor light-emitting device in which a plurality of light-emitting elements are mounted on a substrate, it is possible to reduce unevenness in color (color temperature difference) in the light-emitting surface. Further, in a light-emitting device manufactured by dividing a substrate for each light-emitting element, it is possible to prevent variations in emission color between the light-emitting devices, and the yield is improved.
Further, by using the light transmissive member, the handleability in the manufacturing process is improved, cracking and chipping during transportation can be prevented, and warpage of the wafer level optical semiconductor device member can be prevented. Furthermore, chemical resistance against chemicals used in photolithography processes, plating processes, and the like can be improved.
In addition, by using a light reflecting member, it is possible to improve the light extraction performance of the optical semiconductor device and to improve the cross-sectional properties during dicing, so that the dimensional accuracy of the product and the stability of the light emission characteristics are improved. And the durability as an optical semiconductor device is further improved. In addition, it is possible to select a thermosetting resin having a low hardness, and it is possible to improve the crack resistance due to thermal shock of the optical semiconductor device and to improve the heat resistance and light resistance.

It is the schematic which shows an example of the manufacturing method of the member for wafer level optical semiconductor devices of this invention. It is the schematic which shows another example of the manufacturing method of the member for wafer level optical semiconductor devices of this invention. It is the schematic which shows an example of the manufacturing method of the optical semiconductor device of this invention.

  As described above, it is possible to greatly reduce the types of members, and it can withstand driving of high-power optical semiconductor elements without requiring special protection for prevention of sulfidation of silver plating, and There has been a demand for the development of a method for easily and inexpensively manufacturing an optical semiconductor device that has high dimensional accuracy of the product, little unevenness and variation in emission color, and easy management of product characteristics after manufacture.

  As a result of intensive studies on the above problems, the present inventors have manufactured an optical semiconductor device using a wafer level optical semiconductor device member manufactured by the method for manufacturing a wafer level optical semiconductor device member of the present invention. The inventors have found that the above problems can be achieved, and have completed the present invention.

That is, the present invention provides a method for producing a member for a wafer level optical semiconductor device in which a plurality of optical semiconductor elements are held on a light transmissive member via a thermosetting resin.
(I) a step of mounting the electrode surfaces of a plurality of optical semiconductor elements so as to face the pressure-sensitive adhesive sheet side on the pressure-sensitive adhesive sheet surface of the support substrate provided with the pressure-sensitive adhesive sheet on one side;
(Ii) supplying a thermosetting resin composition between the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the support substrate is mounted and the light transmissive member, and the thermosetting with the support substrate and the light transmissive member. A cured product of the thermosetting resin composition on the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the supporting substrate is mounted by molding and curing the thermosetting resin composition with the adhesive resin composition sandwiched therebetween. And obtaining a laminate in which the light transmissive member is laminated,
(Iii) a step of peeling the support substrate and the pressure-sensitive adhesive sheet from the laminate,
A method comprising:
In the step (i) or the step (ii), a wafer in which a light reflecting member including a light reflecting thermosetting resin and having a hardness of Shore D of 20 or more is installed in a portion corresponding to a dicing line that is a device outer peripheral portion. It is a manufacturing method of the member for level optical semiconductor devices.

  Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

<Method for Manufacturing Member for Wafer Level Optical Semiconductor Device>
FIG. 1 shows an example of a method for producing a wafer level optical semiconductor device member of the present invention.
In the method for producing a wafer level optical semiconductor device member of FIG. 1, first, as step (i), the electrode surfaces of a plurality of optical semiconductor elements 3 are adhered to the adhesive sheet surface of the support substrate 2 provided with the adhesive sheet 1 on one side. It is mounted so as to face the sheet 1 side. At this time, in the step (i), the light reflecting member 12 is installed at a site corresponding to the dicing line on the adhesive sheet surface before the optical semiconductor element 3 is mounted or after the optical semiconductor element 3 is mounted. Of course, you may mount an optical semiconductor element and a light reflection member simultaneously. Next, as a step (ii), the thermosetting resin composition 4 is supplied between the pressure-sensitive adhesive sheet surface on which the optical semiconductor element 3 and the light reflecting member 12 are mounted, and the light transmissive member 11, and the release film 5 is supplied. The thermosetting resin composition 4 is molded and cured using a compression molding machine 6 provided with a thermosetting resin cured product 4 ′ on the pressure-sensitive adhesive sheet surface on which the optical semiconductor element 3 of the support substrate 2 is mounted. And a light-transmitting member 11 are obtained. Next, as a step (iii), the support substrate 2 and the pressure-sensitive adhesive sheet 1 are peeled from the laminate 7.

FIG. 2 shows another example of the method for producing a wafer level optical semiconductor device member of the present invention.
In the method for producing a wafer level optical semiconductor device member of FIG. 2, first, as step (i), the electrode surfaces of a plurality of optical semiconductor elements 3 are adhered to the adhesive sheet surface of the support substrate 2 provided with the adhesive sheet 1 on one side. It is mounted so as to face the sheet 1 side. Next, as the step (ii), first, the light reflecting member 12 is installed in a portion corresponding to the dicing line of the light transmissive member 11, and the pressure sensitive adhesive sheet surface on which the optical semiconductor element 3 of the support substrate 2 is mounted; The thermosetting resin composition 4 is supplied between the light transmissive member 11 provided with the light reflecting member 12 and the thermosetting resin composition 4 is molded using the compression molding machine 6 provided with the release film 5. Then, the laminate 7 is obtained in which the thermosetting resin cured product 4 ′ and the light transmissive member 11 are laminated on the pressure-sensitive adhesive sheet surface on which the optical semiconductor element 3 of the support substrate 2 is mounted. Next, as a step (iii), the support substrate 2 and the pressure-sensitive adhesive sheet 1 are peeled from the laminate 7.

Hereafter, each process of the manufacturing method of the member for wafer level optical semiconductor devices of this invention is demonstrated in detail.
Step (i) is a step of mounting the electrode surfaces of a plurality of optical semiconductor elements on the pressure-sensitive adhesive sheet surface of the support substrate provided with the pressure-sensitive adhesive sheet on one side so as to face the pressure-sensitive adhesive sheet side. The following are mentioned as a member used at this process.

[Support substrate]
When manufacturing a member for wafer level optical semiconductor devices, the support substrate is provided to facilitate handling of a member mounted on the adhesive sheet surface with the electrode surfaces of a plurality of optical semiconductor elements facing the adhesive sheet side. Is required. Also, it is important to reproduce the cured shape of the resin surface that is the same plane as the electrode surface of the optical semiconductor element to which the adhesive sheet is bonded in the molding process of the thermosetting resin composition. It is preferable that a high degree state is obtained. As such a material, a metal, resin, or the like processed with high accuracy to ensure flatness, a silicon wafer, or the like is preferable. Particularly preferred is a metal plate or silicon wafer obtained by processing a metal having a small linear expansion coefficient. The outer shape is not particularly specified, and for example, it may be a square or a circle that is easy to handle. Considering the workability of the subsequent process, it is more preferable that the shape is circular.

[Adhesive sheet]
The pressure-sensitive adhesive sheet provided on the support substrate may be either a single-sided or double-sided pressure-sensitive adhesive sheet. A double-sided pressure-sensitive adhesive sheet is preferred from the standpoint of easy attachment to a support substrate. The pressure-sensitive adhesive sheet is appropriately selected within a range that does not impair workability such as pasting, molding of the thermosetting resin composition, and peeling from the wafer level optical semiconductor device member. The adhesive strength of the adhesive sheet is only required to be able to hold the mounting position of the optical semiconductor element in the molding process of the thermosetting resin composition, as long as it can withstand the heating temperature and molding time of the mold in the molding process. Good. Furthermore, it is selected as appropriate so as to prevent contamination of the electrode surface of the optical semiconductor element generated by the penetration of the thermosetting resin composition into the optical semiconductor element / adhesive sheet interface in the molding process of the thermosetting resin composition. That's fine.

  Moreover, when manufacturing the member for wafer level optical semiconductor devices, it is necessary to be able to peel, and it is preferable to use what peels by making it low adhesive force by using ultraviolet light or heat as a trigger. In particular, it is simpler and more preferable to peel off by foaming with heat as a trigger. Such a pressure-sensitive adhesive sheet may be a commercially available one. For example, a product name manufactured by Nitto Denko Corporation, Riva Alpha No. 3195V (double-sided pressure-sensitive adhesive sheet) or the like can be suitably used. In this case, if the surface to be the foamed surface is the support substrate side, it is preferable because the wafer level optical semiconductor device member can be easily taken out.

  As a method for attaching such an adhesive sheet to the support substrate, an attaching device may be used, or an adhesive sheet may be attached using a rubber roller. In order to increase the flatness of the thermosetting resin surface of the wafer level optical semiconductor device member and improve the yield, it is necessary to use an automatic bonding apparatus capable of bonding an adhesive sheet supplied in a roll form. More preferred.

[Optical semiconductor device]
As the optical semiconductor element, a general one may be used. For example, a light emitting layer is provided on the upper surface of a sapphire substrate having a thickness of about 100 to 200 μm, the light emitting layer includes a p-type semiconductor layer and electrodes connected thereto, An n-type semiconductor layer and an electrode connected to the n-type semiconductor layer may be provided as long as the structure is electrically connected to the outside through the electrode. The optical semiconductor element may be provided with a reflective layer for the purpose of reflecting light, and may be provided so that the light emitted from the light emitting layer is directed to the target surface. The outer shape is not particularly specified and may be easily obtained, but is generally rectangular. The light emission characteristics of the optical semiconductor element may be appropriately selected according to the target optical semiconductor device.

  The plurality of optical semiconductor elements mounted on the support substrate provided with the pressure-sensitive adhesive sheet are on the electrode surface and thermosetting resin surface of the optical semiconductor element of the member for a wafer level optical semiconductor device which is an aggregate of optical semiconductor elements later. On the other hand, it may be arranged at a position preferable for forming a circuit (rewiring circuit) for connecting the optical semiconductor element to the mounting substrate, or a bonding pad for solder connection or flip chip connection. What is necessary is just to arrange | position considering the light distribution of light at the time of operate | moving as a semiconductor device.

As a method for mounting the optical semiconductor element on the support substrate provided with the adhesive sheet, a chip sorter may be used. In general, optical semiconductor elements are supplied in a state where they are classified by wavelength, output, etc. and aligned on an adhesive tape called a blue sheet. A blue sheet in which the optical semiconductor elements are aligned may be expanded using a grip ring or the like, and rearranged on a support substrate provided with an adhesive sheet using a chip sorter. At this time, the electrode surface of the optical semiconductor element needs to be opposed to the adhesive surface of the support substrate on which the adhesive sheet is provided. In some cases, the optical semiconductor element may be reversed.
The load, time, temperature, etc. at the time of mounting may be determined according to the size and shape of the optical semiconductor element, and mounting is performed under the condition that the optical semiconductor element does not shift during molding using the thermosetting resin composition. do it. For example, at room temperature, the load is 100 gf per 1 mm square chip. When the position shift is severe due to the state of the electrode of the optical semiconductor element, after mounting the optical semiconductor element on the support substrate provided with the adhesive sheet, heating the electrode surface of the optical semiconductor element and the adhesive sheet for about 1 hour by heating at 100 ° C. Familiarity increases and misalignment can be suppressed.

[Light reflecting member]
In the method for producing a member for a wafer level optical semiconductor device of the present invention, a light-reflective thermosetting resin is applied to a portion corresponding to a dicing line that is a device outer peripheral portion in the above-described step (i) or the step (ii) described later. And a light reflecting member having a hardness of Shore D and 20 or more.

  As described above, by providing the light reflecting member at a portion corresponding to the dicing line that is the outer peripheral portion of the optical semiconductor device, the light leaking from the side surface of the device is efficiently reflected to the light transmissive member side, and the light extraction of the optical semiconductor device is performed. It becomes possible to improve the nature. Furthermore, since the cross-sectional properties during dicing can be improved by using a light reflecting member having a hardness as described later, the dimensional accuracy of the product and the stability of the light emission characteristics are improved, and the durability as an optical semiconductor device is further improved. Improves. In addition, it is not necessary to select the hardness of the thermosetting resin filled around the optical semiconductor element, that is, it is possible to select a low-hardness thermosetting resin, and resistance to cracking due to thermal shock of the optical semiconductor device. It is possible to improve the heat resistance and light resistance.

As a method of applying the material composition of the light reflecting member, any method may be selected as long as a desired shape can be formed, but a dispensing method, a jet dispensing method, a printing method, or the like can be preferably used. For example, when a dispensing apparatus is used, it can be easily applied by selecting an appropriate nozzle and discharging at a temperature of 23 ° C. and a pressure of 0.5 to ⁵ kgf / cm ² . When the printing method is used, it can be easily applied by stencil printing or screen printing using a mask plate prepared so that a desired shape can be printed.

  What is necessary is just to select the thickness of a light reflection member suitably according to a desired device structure, and is 200-1000 micrometers normally, More preferably, it is 300-500 micrometers. What is necessary is just to select the width | variety of a light reflection member suitably, and is 200-1000 micrometers normally, More preferably, it is 300-500 micrometers.

In the case of installing the light reflecting member in the step (i), for example, the light reflecting member 12 may be installed on the pressure-sensitive adhesive sheet 1 as shown in FIG. The light reflecting member may be installed before mounting the optical semiconductor element on the adhesive sheet surface, may be installed after mounting the optical semiconductor element, or may be installed simultaneously. If it is installed before mounting the optical semiconductor element, there is no risk of displacement of the optical semiconductor element in the step of curing the light-reflective thermosetting resin, which is preferable.
On the other hand, when installing the light reflecting member in the step (ii), the light reflecting member 12 may be installed on the surface of the light transmissive member 11 in contact with the thermosetting resin composition 4 as shown in FIG.

  The resin used as the light-reflective thermosetting resin that is the material of the light-reflecting member is at least one resin selected from silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, acrylate resins, and urethane resins. It is preferable. Of these, silicone resins, modified silicone resins, epoxy resins, and modified epoxy resins having high heat resistance and light resistance are preferable, and silicone resins, modified silicone resins, and epoxy resins are more preferable.

  The viscosity of the material composition of the light reflecting member may be in a range that can be molded into a desired shape by the above-described process, and may be liquid or solid at room temperature. It can be set as the viscosity which can be shape | molded by making it melt | dissolve using this warming mixing apparatus. From the viewpoint of enhancing the filling property of the material composition in the narrow portion, the material is preferably a liquid material at room temperature, and more preferably in the range of 1 to 100 Pa · s at room temperature. Moreover, it is preferable that the light reflectance in wavelength 450nm of a light reflection member is 80% or more, More preferably, it is 90% or more.

  The light reflecting member is formed (installed) by applying the material composition to a desired position and then temporarily curing or main curing. The material composition may be cured according to the curing conditions of the light-reflective thermosetting resin, as long as the shape of the light-reflecting member is maintained in the subsequent steps. Preferably, it is temporary hardening which can ensure adhesiveness with a light transmissive member and a thermosetting resin. For example, a general thermosetting silicone resin can be temporarily cured at 120 ° C. for about 1 hour.

  The light reflecting member is provided at a portion of a dicing line in a later dicing process and needs to be cut by a dicing blade or the like. Therefore, in order to support the wafer level optical semiconductor device member and the optical semiconductor device after the dicing process, those which become hard after curing are preferable. In the present invention, the upper limit of the hardness of the light reflecting member is not particularly limited. On the other hand, the hardness of the light reflecting member needs to be 20 or more on Shore D from the viewpoint of easiness of dicing and strength when an optical semiconductor device is used. , Preferably 40 or more on Shore D. If the Shore D is less than 20, problems such as failure to obtain a good cross section during dicing, and failure to obtain strength when mounted as an optical semiconductor device occur.

  As described above, the light reflecting member is preferably hardened after curing to support the wafer level optical semiconductor device member and the optical semiconductor device after dicing, and is excellent in heat resistance, weather resistance, and light resistance. It is preferable that In order to provide such a function according to the purpose, the cured product (light reflecting member) is included by adding either or both of an inorganic filler and a diffusing material to the material composition of the light reflecting member. It is preferable.

  Inorganic fillers include, for example, silicone, silica, alumina, zirconia, titania, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate from the viewpoint of thermal conductivity, moldability, and flame retardancy. In particular, silica, alumina, zirconia, titania, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate are preferable. Of these, silica and alumina, which have few volatile components and can provide high transparency, are preferably used. As a specific example, if it is silicone, the silicone powder which consists of polyorganosilsesquioxane resin, or the silicone powder which has polyorganosilsesquioxane resin in part or all of the surface is mentioned. Examples of the silica include silica produced by a dry method such as fumed silica and fused silica, and silica produced by a wet method such as colloidal silica, sol-gel silica, and precipitated silica. In the case of alumina, an α-phase crystal structure is generally used, but an intermediate phase such as a θ-phase, a γ-phase, and a δ-phase may be included. From the viewpoint of the stability of alumina, α-alumina is preferably used. These may be used alone or in combination of two or more.

  In addition, as an inorganic filler, it is preferable that an average particle diameter (D50) is 0.01 micrometer or more and 100 micrometers or less. If it is 0.01 μm or more, the production of the fine particles and the dispersion into the material composition are easy. If it is 100 μm or less, the surface shape after molding will not be adversely affected.

  As the diffusion material, barium titanate, titanium oxide, aluminum oxide, silicon oxide, or the like can be suitably used. The particle size of the diffusing material is not particularly limited, but is preferably 100 μm or less in consideration of the fluidity of the material composition of the light reflecting member and the filling property to the narrow portion.

  The content of the filler or diffusing material in the material composition of the light reflecting member is preferably more than 0 volume part and 90 parts by volume or less with respect to 100 volume parts of the material composition. More preferably, it is more than 0 volume part and 50 volume parts or less. If it is 90 volume parts or less, since the dispersibility to the material composition of a light reflection member and the fluidity | liquidity of the material at the time of shaping | molding do not fall, it is preferable.

  As such a material, a commercially available material may be used. For example, materials used for liquid silicone rubber injection molding are suitable. For example, product names KEG-2000 and KCR-3500 manufactured by Shin-Etsu Chemical Co., Ltd. , KCR-4000 and the like, but are not limited thereto.

In the subsequent step (ii), the thermosetting resin composition is supplied between the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the supporting substrate is mounted and the light transmissive member obtained in the above step (i). The thermosetting resin composition is molded and cured in a state where the thermosetting resin composition is sandwiched between the support substrate and the light-transmitting member, so that the thermosetting is performed on the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the support substrate is mounted. It is the process of obtaining the laminated body by which the hardened | cured material of the transparent resin composition and the light transmissive member were laminated | stacked.
Moreover, the process (iii) performed following this process (ii) is a process of peeling a support substrate and an adhesive sheet from a laminated body.
In addition to the support substrate obtained by the step (i) and having a plurality of optical semiconductor elements mounted on the pressure-sensitive adhesive sheet, examples of the member used in this step include the following.

[Light transmissive member]
The light transmissive member used in the present invention means a member capable of transmitting light emitted from an optical semiconductor element or a light conversion material. In the present invention, the light transmissive member plays a role of extracting light when an optical semiconductor device is formed, and also has a role of improving the handleability of the laminate formed by molding the thermosetting resin composition. Specifically, it becomes possible to prevent cracking and chipping during conveyance, and further prevent warpage of the wafer level optical semiconductor device member. Furthermore, it becomes possible to improve the chemical resistance with respect to the chemical | medical solution used at a later photolithography process, a plating process, etc.

  Examples of such light transmissive members include inorganic materials such as glass, quartz, and sapphire, and resin materials such as silicone resin, organically modified silicone resin, epoxy resin, modified epoxy resin, acrylate resin, and urethane resin. Of these, it is preferable to use one containing at least one, but the invention is not limited to these, and other ones may be used.

  As the light transmissive member, a material obtained by processing the above-described material into a fixed shape in advance may be used. What is necessary is just to select the structure from the light distribution characteristics of the optical semiconductor device that is the final product, such as a plate shape, a disk shape, a sheet shape, and a lens shape, and if it is an inorganic material such as quartz, glass, sapphire, Then, it may be formed into a fixed shape by grinding or the like, and a partially moldable inorganic material and resin material may be used as a fixed shape by various moldings.

  The shape of the light transmissive member is preferably approximately the same as the outer shape of the wafer level optical semiconductor device member, and may be any shape that allows easy manufacture of the final device intended. For example, when the support substrate provided with the adhesive sheet on one side has a diameter of 200 mm, the light-transmitting member may have a diameter of 200 mm or smaller, and more specifically, a circular shape having a diameter of about 190 mm. And it is sufficient. When the light-transmitting member is easily broken, the corner portion may be chamfered. Furthermore, the surface of the light transmissive member may be a mirror surface or may be provided with a thread. When it is with a scratch, it is preferable to use one finished with an abrasive of # 1000 or more, and chemical etching may be applied to prevent minute cracks on the surface of the light transmissive member.

  The thickness of the light transmissive member is not particularly limited, and may be appropriately selected from the intended design of the final device structure. In light of the tendency to require lightness, smallness and smallness, an example is preferably 1 mm or less, more preferably 0.5 mm or less. A light-transmitting member having a thickness exceeding 1 mm may be used, and in this case, it may be thinned separately using a surface grinding apparatus typified by a grinder or a surface sprayer.

  The light transmissive member is preferably hard so as to support the wafer level optical semiconductor device member and the optical semiconductor device after dicing. In the present invention, the upper limit of the hardness is not particularly limited, but the hardness of the light-transmitting member is preferably 50 or more on Shore D, and more preferably, from the viewpoint of easiness of dicing processing and strength when a wafer level optical semiconductor device is obtained. Is 70 or more on Shore D. If the Shore D is less than 50, there may be a problem that a good cross section cannot be obtained at the time of dicing, and the strength when mounting as an optical semiconductor device cannot be obtained.

As a material of such a light transmissive member, a moldable inorganic material and a resin material are suitable.
The inorganic material that can be molded refers to, for example, a wavelength conversion member in which inorganic phosphor powder is dispersed in glass, and lead-free low-melting glass such as SnO ₂ —P ₂ O ₅ glass or TeO glass, It can be used as a wavelength conversion member by firing or pressure molding a mixture containing phosphor in glass powder. Examples of such glass material is not particularly limited on the composition system, for _{example, SiO 2 -B 2 O 3 -MO} (MO is MgO, CaO, SrO, representing the BaO) based _glass, SiO 2 _-B 2 _{O 3} Glass, SiO ₂ —B ₂ O ₃ —M ₂ O (M ₂ O represents Li ₂ O, Na ₂ O, K ₂ O) glass, SiO ₂ —B ₂ O ₃ —Al ₂ O ₃ glass SiO ₂ —B ₂ O ₃ —ZnO-based glass and ZnO—B ₂ O ₃ -based glass can be used. Among them, at the time of baking, it is preferable to use an inorganic fluorescent substance and the reaction is hardly _SiO 2 _-B 2 _O 3 -RO based glass and _ZnO-B 2 _{O 3} based glass. A binder, a plasticizer, a solvent and the like may be used together with the glass powder and the inorganic phosphor powder.

  As the resin material, any resin may be used as long as the phosphor can be uniformly dispersed therein and can be molded into a plate shape or a sheet shape. Specifically, silicone resin, organic modified silicone resin, epoxy resin, modified epoxy resin, polyarylate resin, PET modified polyarylate resin, polycarbonate resin, cyclic olefin, polyethylene terephthalate resin, polymethyl methacrylate resin, polypropylene resin, modified Examples thereof include acrylic, polystyrene resin, acrylonitrile / styrene copolymer resin, and the like. From the viewpoint of transparency, a silicone resin or an epoxy resin is preferably used. Further, from the viewpoint of heat resistance, silicone resins and organically modified silicone resins are particularly preferably used.

(Phosphor)
Further, the light transmitting member may contain a phosphor for the purpose of wavelength conversion from the optical semiconductor element. By dispersing the phosphor in the light transmissive member, the light emitted from the optical semiconductor element and transmitted through the thermosetting resin can be converted into light having a target wavelength by the light transmissive member. For this reason, light can be diffused more than in the case where a phosphor is contained in the thermosetting resin, and it can be taken out as uniform light in the surface direction in the optical semiconductor device. That is, an optical semiconductor device that has been a point light source can be used as a surface light source.

  The phosphor absorbs blue light, violet light, and ultraviolet light emitted from the optical semiconductor element, converts the wavelength, and has red, orange, yellow, green, and blue regions having wavelengths different from those of the light emitted from the optical semiconductor element. It emits light having a wavelength of. Thereby, a part of the light emitted from the optical semiconductor element and a part of the light emitted from the phosphor are mixed to obtain a multicolor optical semiconductor device including white.

  The phosphors as described above include various phosphors such as a phosphor that emits green light, a phosphor that emits blue light, a phosphor that emits yellow light, and a phosphor that emits red light. Specific phosphors used in the present invention include known phosphors such as organic phosphors, inorganic phosphors, fluorescent pigments, and fluorescent dyes. Examples of organic phosphors include allylsulfoamide / melamine formaldehyde co-condensed dyes and perylene phosphors. Perylene phosphors are preferably used because they can be used for a long period of time. Examples of the phosphor that is particularly preferably used in the present invention include inorganic phosphors. The inorganic phosphor used in the present invention is described below.

Examples of phosphors that emit green light include SrAl ₂ O ₄ : Eu, Y ₂ SiO ₅ : Ce, Tb, MgAl ₁₁ O ₁₉ : Ce, Tb, Sr ₇ Al1 ₂ O ₂₅ : Eu, (Mg, Ca, Sr And at least one of Ba) Ga ₂ S ₄ : Eu and the like.

Examples of phosphors that emit blue light include Sr ₅ (PO ₄ ) ₃ Cl: Eu, (SrCaBa) ₅ (PO ₄ ) ₃ Cl: Eu, (BaCa) ₅ (PO ₄ ) ₃ Cl: Eu, (Mg, Ca, Sr, at least one or more of _{Ba) 2 B 5 O 9 Cl} : Eu, Mn, (Mg, Ca, Sr, at least one or more of _{Ba) (PO 4) 6 C} l2: Eu, Mn and the like It is done.

As phosphors emitting green to yellow, at least cerium-activated yttrium / aluminum oxide phosphors, at least cerium-enriched yttrium / gadolinium / aluminum oxide phosphors, at least cerium-activated yttrium / aluminum Examples thereof include garnet oxide phosphors and yttrium / gallium / aluminum oxide phosphors activated with at least cerium (so-called YAG phosphors). Specifically, Ln ₃ M ₅ O ₁₂ : A (Ln is at least one selected from Y, Gd, and La. M includes at least one of Al and Ca. A is a lanthanoid series. ), (Y _1-x Ga _x ) ₃ (Al _1-y Ga _y ) ₅ O ₁₂ : A (A is at least one or more selected from Ce, Tb, Pr, Sm, Eu, Dy, Ho) 0 <x <0.5, 0 <y <0.5) can be used.

Examples of the phosphor that emits red light include Y ₂ O ₂ S: Eu, La ₂ O ₂ S: Eu, Y ₂ O ₃ : Eu, and Gd ₂ O ₂ S: Eu.

As the phosphor corresponding to the current mainstream of the blue LED _{emission, Y 3 (Al, Ga)} 5 O 12: Ce, (Y, Gd) 3 Al 5 O 12: Ce, Lu 3 Al 5 O 12: Ce, Y ₃ Al ₅ O ₁₂ : YAG phosphor such as Ce, TAG phosphor such as Tb ₃ Al ₅ O ₁₂ : Ce, (Ba, Sr) ₂ SiO ₄ : Eu phosphor and Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce phosphor, silicate phosphor such as (Sr, Ba, Mg) ₂ SiO ₄ : Eu, (Ca, Sr) ₂ Si ₅ N ₈ : Eu, (Ca, Sr) AlSiN ₃ : Eu, CaSiAlN ₃ : Nitride phosphor such as Eu, Cax (Si, Al) ₁₂ (O, N) ₁₆ : Oxynitride phosphor such as Eu, and (Ba, Sr, Ca) Si ₂ O ₂ N _2: u _{phosphor, Ca 8 MgSi 4 O 16 Cl} 2: Eu _{phosphor, SrAl 2 O 4: Eu,} Sr 4 Al 14 O 25: phosphor such as Eu and the like.
Among these, YAG-based phosphors, TAG-based phosphors, and silicate-based phosphors are preferably used in terms of light emission efficiency and luminance.

In addition to the above, known phosphors can be used according to the intended use and the intended emission color.
The particle size of the phosphor is not particularly limited, but preferably has a D50 of 0.05 μm or more, more preferably 3 μm or more. Further, those having a D50 of 30 μm or less are preferred, and those having a D50 of 20 μm or less are more preferred. Here, D50 refers to the particle size when the accumulated amount from the small particle size side is 50% in the volume-based particle size distribution obtained by measurement by the laser diffraction / scattering particle size distribution measurement method. When D50 is within the above range, the dispersibility of the phosphor in the material composition is good, and stable light emission can be obtained.

You may use the said fluorescent substance 1 type or in mixture of 2 or more types.
The amount of the phosphor added to the material composition of the light transmissive member is not particularly limited, and may be appropriately adjusted so as to obtain the desired color tone and brightness of the optical semiconductor device. It is 0 volume part or more and less than 50 volume part with respect to 100 volume parts of compositions. More preferably, it is 0 volume part or more and less than 20 volume part. If it is 50 volume parts or less, since the usage-amount of fluorescent substance does not increase too much, it is economical.

(Filler)
In addition, when the above light-transmitting member is an inorganic material or resin material that can be molded, in order to provide functions according to the purpose such as low linear expansion coefficient, high hardness, and imparting light diffusivity, It is preferable to add a filler to the material composition of the permeable member.

  Examples of the filler include fine particles such as silicone, silica, alumina, zirconia, and titania from the viewpoint of thermal conductivity, moldability, and flame retardancy. Of these, silica and alumina, which have few volatile components and can provide high transparency, are preferably used. As a specific example, if it is silicone, the silicone powder which consists of polyorganosilsesquioxane resin, or the silicone powder which has polyorganosilsesquioxane resin in part or all of the surface is mentioned. Examples of the silica include silica produced by a dry method such as fumed silica and fused silica, and silica produced by a wet method such as colloidal silica, sol-gel silica, and precipitated silica. In the case of alumina, an α-phase crystal structure is generally used, but an intermediate phase such as a θ-phase, a γ-phase, and a δ-phase may be included. From the viewpoint of the stability of alumina, α-alumina is preferably used. These may be used alone or in combination of two or more.

  The particle size of the filler is not particularly limited, but the average particle size (D50) is 0.01 μm or more and 100 μm or less in consideration of the filling efficiency, the fluidity of the material composition, and the filling property to the narrow portion. Is preferred. If it is 0.01 μm or more, the production of the fine particles and the dispersion in the material composition are easy. If it is 100 μm or less, the surface shape after molding will not be adversely affected.

The amount of the filler added to the material composition of the light transmissive member is preferably more than 0 volume part and 90 volume parts or less with respect to 100 volume parts of the material composition of the light transmissive member. More preferably, it is more than 0 volume part and 50 volume parts or less. If it is 90 volume parts or less, since the dispersibility to a material composition and the fluidity | liquidity of the resin at the time of shaping | molding do not fall, it is preferable.
Further, at least one selected from the group consisting of pigments and reflective substances can be mixed according to other purposes.

[Thermosetting resin composition]
(Thermosetting resin)
The thermosetting resin composition used for the member for wafer level optical semiconductor devices contains one or more kinds of resins selected from silicone resins, organically modified silicone resins, epoxy resins, modified epoxy resins, acrylate resins, and urethane resins. It is preferable. Among these, a silicone resin, an organically modified silicone resin, an epoxy resin, and a modified epoxy resin are preferable, and a silicone resin or an organically modified silicone resin is more preferable from the viewpoint of heat resistance and light resistance. Such a thermosetting resin may be a commercially available one.

  The thermosetting resin composition may be a resin that can be molded, and it may be liquid or solid at room temperature, and if it is solid, it can be molded by melting using a dedicated heating and mixing device. It is possible to obtain a high viscosity. From the viewpoint of enhancing the filling property of the thermosetting resin composition in the narrow portion, the material is preferably a liquid material at room temperature, and more preferably in the range of 1 to 100 Pa · s at room temperature. The thermosetting resin composition preferably has high light transmittance, and the light transmittance after heat curing at a wavelength of 450 nm is preferably 80% or more, and more preferably 90% or more.

(Phosphor)
Moreover, you may make the thermosetting resin composition contain the fluorescent substance aiming at wavelength conversion from the optical semiconductor element mentioned above. By mixing and dispersing the phosphor in the thermosetting resin composition, it is possible to efficiently convert the wavelength of light emitted from the optical semiconductor element into light having a target wavelength.

You may use fluorescent substance 1 type or in mixture of 2 or more types.
The amount of the phosphor added to the thermosetting resin composition is not particularly limited, and may be appropriately adjusted so that the desired light characteristics can be obtained when an optical semiconductor device is obtained. On the other hand, it is 0 volume part or more and less than 50 volume part. More preferably, it is 0 volume part or more and less than 20 volume part. If it is 50 parts by volume or less, the fluidity of the thermosetting resin composition is not impaired, and the amount of the phosphor used is not excessive, which is economical.

  As described above, by using the thermosetting resin composition containing the phosphor, the light emitted from the optical semiconductor element is converted into light having a target wavelength by the phosphor particles dispersed in the thermosetting resin. Wavelength conversion can be performed. For this reason, it becomes possible to take out as light of the target wavelength as an optical semiconductor device.

(Filler)
As described above, the thermosetting resin composition is preferably hardened after curing to support the wafer level optical semiconductor device member and the optical semiconductor device after the dicing process, as well as heat resistance, weather resistance, and light resistance. It is preferable that it is resin excellent in property. In order to give such a function according to the purpose, it is preferable to add the filler to the cured product by adding the filler to the thermosetting resin composition.

  Examples of the filler include fine particles such as silicone, silica, alumina, zirconia, and titania from the viewpoint of thermal conductivity, moldability, and flame retardancy. Of these, silica and alumina, which have few volatile components and can provide high transparency, are preferably used. As a specific example, if it is silicone, the silicone powder which consists of polyorganosilsesquioxane resin, or the silicone powder which has polyorganosilsesquioxane resin in part or all of the surface is mentioned. Examples of the silica include silica produced by a dry method such as fumed silica and fused silica, and silica produced by a wet method such as colloidal silica, sol-gel silica, and precipitated silica. In the case of alumina, an α-phase crystal structure is generally used, but an intermediate phase such as a θ-phase, a γ-phase, and a δ-phase may be included. From the viewpoint of the stability of alumina, α-alumina is preferably used. These may be used alone or in combination of two or more.

  The particle size of the filler is not particularly limited, but the average particle size (D50) is 0.01 μm or more and 100 μm or less in consideration of the filling efficiency, the fluidity of the thermosetting resin composition, and the filling property to the narrow portion. It is preferable that If it is 0.01 micrometer or more, manufacture of a microparticle and dispersion | distribution in a thermosetting resin composition will be easy. If it is 100 μm or less, the surface shape after molding will not be adversely affected.

The amount of the filler added to the thermosetting resin composition is preferably more than 0 volume part and 90 volume parts or less with respect to 100 volume parts of the resin component in the thermosetting resin composition. More preferably, it is more than 0 volume part and 50 volume parts or less. If it is 90 volume parts or less, since the dispersibility to a thermosetting resin composition and the fluidity | liquidity of the resin at the time of shaping | molding do not fall, it is preferable.
Further, at least one selected from the group consisting of pigments and reflective substances can be mixed according to other purposes.

For molding the thermosetting resin composition in the step (ii), any molding method may be used. For example, the thermosetting resin composition is compressed by using a compression molding machine having a release film on the surface in contact with the light transmissive member. It is preferable to carry out by molding. When performing by compression molding, specifically, for example, the thermosetting resin composition may be molded by the following procedure.
First, a support substrate having a plurality of optical semiconductor elements mounted on an adhesive sheet surface obtained in step (i) is mounted on a lower mold having a reference surface heated to a predetermined molding temperature, and the optical semiconductor elements are mounted. Place it so that the surface is on top. Depending on the case, you may provide a peeling film in a lower metal mold | die. Subsequently, a light transmissive member is placed on the upper mold facing the lower mold. At this time, in the case of installing the above-described light reflecting member in the step (ii), the light reflecting member is installed in a portion corresponding to the dicing line of the light transmitting member. At this time, it is preferable to provide a release film for improving the mold releasability of the thermosetting resin and the light transmissive member and preventing mold contamination. As a method of mounting the light transmissive member on the upper mold, a hole is made at a position corresponding to the position of the suction hole of the release film with respect to the upper mold provided with an adsorption hole for the purpose of adsorbing the release film in advance. The transparent member may be vacuum-adsorbed, and if vacuum adsorption is not desirable, apply a thin adhesive to the part that does not affect the final product on the surface of the light-transmitting member, press it against the release film, and temporarily fix it You may let them. Next, in accordance with a known compression molding process, after applying a predetermined amount of the thermosetting resin composition, the upper mold and the lower mold are closed, the inside of the mold is decompressed, and nesting is performed so that a predetermined molding pressure is applied. Then, the thermosetting resin composition is temporarily cured by heating and holding for a predetermined time according to the characteristics of the thermosetting resin composition. The thermosetting resin composition is supplied in a necessary amount in accordance with the inner volume of the sealing region, and is preferably supplied by quantitative discharge with a dispenser or the like. Subsequently, it peels from a metal mold | die with a peeling film, the resin material is main-cured by heat processing, and a laminated body is obtained.
Then, a support substrate and an adhesive sheet are peeled (process (iii)). Since the adhesive sheet uses what is peeled off using ultraviolet light or heat as a trigger as described above, the adhesive sheet may be peeled off according to each trigger.

The release film (release film) may be a long release film formed in a width dimension that covers the molding surfaces of the upper mold and the lower mold. The release film is provided for the purpose of covering the sealing region so that the thermosetting resin composition and the light transmissive member do not directly contact the molding surface at the time of sealing. The release film is flexible and has a certain strength so that it can be deformed according to the unevenness of the molding surface in the sealing region, and has a heat resistance that can withstand the mold temperature, a sealing rubber and a film material that can be easily peeled off from the mold. Preferably used.
Such films include polytetrafluoroethylene resin (PTFE) film, ethylene-tetrafluoroethylene copolymer resin (ETFE) film, tetrafluoroethylene-perfluoropropylene copolymer resin (FEP) film, polyvinylidene fluoride resin ( Fluorine resin films such as PBDF) films; polyethylene terephthalate resin (PET) films, polypropylene resin (PP) films, and the like.

As described above, a member for a wafer level optical semiconductor device can be manufactured.
If it is such a manufacturing method of the member for wafer level optical semiconductor devices of the present invention, the kind of member can be reduced greatly, and it does not need special protection for prevention of sulfidation of silver plating. Easily manufacture optical semiconductor devices that can withstand the driving of high-power optical semiconductor elements, have high product dimensional accuracy, have little unevenness and variation in emission color, and easily manage product characteristics after manufacturing Thus, a member for a wafer level optical semiconductor device that can be manufactured can be manufactured.

<Optical semiconductor device manufacturing method>
Then, the manufacturing method of the optical semiconductor device of this invention is demonstrated.
In the method for producing an optical semiconductor device of the present invention, an optical semiconductor element is formed on the electrode surface of each optical semiconductor element of the member for wafer level optical semiconductor device obtained by the method for producing a member for wafer level optical semiconductor device of the present invention described above. An optical semiconductor device is manufactured by forming a circuit (rewiring circuit) for connecting the substrate to the mounting substrate, or a bonding pad for solder connection or flip chip connection, and then dicing into individual pieces.

More specifically,
(Iv) forming a seed layer after performing roughening by etching on the surface of the wafer level optical semiconductor device member where the optical semiconductor element is exposed;
(V) forming a plating resist film on the surface on which the seed layer is formed, performing development after exposure using a photomask, and forming an opening on the electrode surface of each optical semiconductor element;
(Vi) A circuit for connecting the optical semiconductor element to the mounting substrate using an electrolytic plating method or an electroless plating method, or a bonding pad for solder connection or flip chip connection on the surface where the opening is formed. After forming, removing the plating resist film, and subsequently removing unnecessary portions of the seed layer that appeared on the surface after peeling of the plating resist film by etching;
(Vii) a step of dicing into individual pieces,
It can manufacture by the method which has this.

FIG. 3 shows an example of a method for manufacturing an optical semiconductor device of the present invention.
In the optical semiconductor device manufacturing method of FIG. 3, as a step (iv), the surface of the wafer level optical semiconductor device member from which the optical semiconductor element 3 is exposed (that is, the same plane as the electrode surface and the electrode surface of the optical semiconductor element 3). Then, the seed layer 8 is formed after the surface of the cured thermosetting resin 4 ′ on the opposite side of the light transmissive member 11 is roughened by etching. Next, as step (v), a plating resist film 9 is formed on the surface on which the seed layer 8 is formed, and exposure is performed using a photomask, followed by development, so that an opening is formed on the electrode surface of each optical semiconductor element 3. Form. Next, as a step (vi), a circuit (not shown) for connecting the optical semiconductor element to the mounting substrate using an electrolytic plating method or an electroless plating method, or solder connection or flipping is performed on the surface where the opening is formed. After the bonding pad 10 for chip connection is formed, the plating resist film 9 is peeled off, and then unnecessary portions of the seed layer 8 appearing on the surface after the plating resist film 9 is peeled off are removed by etching. Next, as a step (vii), the light reflecting member 12 is diced into individual pieces.

Hereafter, each process of the manufacturing method of the optical semiconductor device of this invention is demonstrated in detail.
Step (iv) is a step of forming a seed layer after roughening the surface of the wafer level optical semiconductor device member from which the optical semiconductor element is exposed by etching.

Examples of the purpose of etching include electrode surface of an optical semiconductor element of a wafer level optical semiconductor device member and surface cleaning and roughening of a thermosetting resin that is flush with the electrode surface. A specific etching method is not particularly limited as long as the above-described object is achieved, but includes chemical etching using a chemical solution and dry etching represented by plasma treatment. More preferred is dry etching. As a dry etching apparatus, a general plasma cleaning apparatus may be used. If the plasma uses a general-purpose gas such as argon, nitrogen, oxygen, or a fluorine-based gas such as CF ₄ , the cleaning effect and the roughening effect are achieved. In addition, the adhesion to the seed layer formed in the next step is improved, and it is versatile and preferable. Particularly preferred is oxygen gas or CF ₄ .

  The formation of the seed layer subsequent to the etching is performed for the purpose of performing electrolytic plating or electroless plating in a later step. Examples of the apparatus for forming the seed layer include a vacuum vapor deposition apparatus and a sputtering apparatus, and any apparatus may be used, but a sputtering apparatus with a uniform film thickness of the seed layer after treatment is more preferable. Processing conditions are not particularly limited, and may be any conditions according to the seed type.

  The seed type is not particularly limited as long as the purpose of providing a conductive film is achieved. Examples include Au, Pt, Cr, ZnO, Al alloy, Cu, Cu alloy, Ta, Ta alloy, Ti, TiN, and W. Can be mentioned. More preferably, it is Ti that can enhance the adhesiveness with the thermosetting resin, or Cu that can be inexpensively advanced in the subsequent plating step and has low electric resistance. These seeds may be laminated singly or in plural.

  The film thickness of the seed layer is not particularly limited as long as uniform conductivity can be obtained in the subsequent plating step and the purpose of obtaining adhesion with the thermosetting resin and the plating metal is achieved, but it is usually 10 nm to 1 μm. It is a range. If it is 10 nm or more, sufficient adhesiveness is obtained, and if it is 1 μm or less, it is economical.

  In the next step (v), a plating resist film is formed on the surface on which the seed layer is formed, exposure is performed using a photomask, and development is performed to form an opening on the electrode surface of each optical semiconductor element. It is. As long as the desired structure can be obtained, the construction method is not limited. For example, it is convenient and preferable to perform patterning by a construction method known as a known subtractive method.

  The photosensitive resin material used as the plating resist film can be obtained in various markets, as long as it is resistant to chemicals in the subsequent plating process, thin film formation type, thick film formation type, positive type, negative type, What is necessary is just to select freely from various characteristics, such as a photosensitive wavelength. Generally, the photosensitive resin material is supplied in the form of a dry film or a liquid resin, and the supply form can be selected depending on the type of production equipment. In the case of a dry film, if a photosensitive resin is applied to the seed surface of the wafer level optical semiconductor device member on which the seed layer obtained in step (iv) is formed using means such as a roll laminator or a press. Good. On the other hand, in the case of a liquid resin, a resin such as a spin coater, a screen printing machine, or a curtain coater is used on the seed surface of the wafer level optical semiconductor device member on which the seed layer obtained in step (iv) is formed. May be applied and dried to form a resin layer. Therefore, the surface of the seed layer of the wafer level optical semiconductor device member at this time is in a state covered with the photosensitive resin. The coating amount can be appropriately selected according to the design of the final device, but the film thickness is preferably 0.1 to 100 μm. More preferably, it is 1-20 micrometers.

  The wafer level optical semiconductor device member prepared in this way is exposed to a predetermined portion using a mask and an exposure apparatus by a photolithography technique, and developed with a developer that matches the photosensitive resin material. By forming an opening in the electrode surface of the semiconductor element, the previously provided seed layer is exposed.

  What is necessary is just to use a well-known exposure apparatus, and the exposure conditions should just follow the processing conditions of the used photosensitive resin material. In order to efficiently perform the photocuring reaction, a solvent or the like may be volatilized in advance by preheating as necessary. Preheating can be performed, for example, at 40 to 140 ° C. for about 1 minute to 1 hour. Next, the film is exposed to light having a wavelength of 240 to 500 nm through a photomask and cured. For example, the photomask may be formed by cutting a desired pattern. In addition, the material of the photomask is preferably one that shields the light having the wavelength of 240 to 500 nm. For example, chromium is preferably used, but is not limited thereto.

Examples of the light having a wavelength of 240 to 500 nm include light of various wavelengths generated by a radiation generator, for example, ultraviolet light such as g-line and i-line, and far-ultraviolet light (248 nm). The exposure amount is preferably, for example, 10 to 2000 mJ / cm ² .
Here, heat treatment may be performed after exposure in order to further increase the development sensitivity as necessary. The post-exposure heat treatment can be performed at 40 to 140 ° C. for 0.5 to 10 minutes, for example.

  The opening is provided for forming a rewiring circuit, a bonding pad, and the like in the step (vi) described later. As the design of the opening, it is possible to design freely. For example, it may be designed so that one optical semiconductor device becomes one optical semiconductor device, or a plurality of optical semiconductor elements are connected in series. You may design so that it may connect and it may become one optical semiconductor device.

After the exposure or post-exposure heating, development is performed using a developer. As the developer, a known one may be used according to the processing conditions of the photosensitive resin material used for the plating resist film. For example, an organic solvent developer such as dimethylacetamide or cyclohexanone used as a solvent, or sodium carbonate An alkali developer such as sodium hydroxide or tetramethylammonium hydride (TMAH) may be selected and adjusted to an appropriate concentration for use, but is not limited thereto.
The development can be performed by a normal method, for example, by immersing a pattern formed product. Thereafter, washing, rinsing, drying and the like are performed as necessary to obtain a plating resist film having a desired pattern.

  A circuit is formed on the plating resist film formed on the optical semiconductor element in accordance with the design of the optical semiconductor device. The alignment mark necessary for forming these circuits is previously applied to the wafer level light. By forming on the semiconductor device member, a circuit can be formed at a predetermined position with very high accuracy. Specifically, an optical semiconductor element or an Si chip instead of the optical semiconductor element may be mounted at a position to be an alignment mark and molded as a member for a wafer level optical semiconductor device. Further, according to circumstances, an anode mark or a dicing street mark may be provided. In addition, when an electroplating method is selected in the subsequent plating step, it is necessary to open a part of the plating resist film for the purpose of connecting the previously provided seed layer and the electrode for electrolytic plating.

  In the subsequent step (vi), a circuit (rewiring circuit) for connecting the optical semiconductor element to the mounting substrate using an electrolytic plating method or an electroless plating method, or solder connection or flipping is performed on the surface where the opening is formed. In this process, after the bonding pad for chip connection is formed, the plating resist film is peeled off, and then unnecessary portions of the seed layer appearing on the surface after peeling of the plating resist film are removed by etching.

  As an electrode forming method by plating, specifically, a conductive resin pattern is formed by electroplating or electroless plating by a conventional method using the photosensitive resin material film formed by the above photolithography technique as a plating resist film. Then, a method of removing the resist pattern is mentioned.

Examples of electrolytic plating or electroless plating include, but are not limited to, electrolytic Cu plating, electroless Cu plating, electrolytic Ni plating, electroless Ni plating, electrolytic Fe-Ni plating, and electrolytic Au plating. Instead, it can be plated by a known plating bath and plating conditions. If the material of the plating layer is the same as the material of the seed layer, the adhesion is improved. Therefore, the material is more preferably the same.
The plating thickness is generally 80 to 100% of the thickness of the plating resist film. For example, the seed layer is copper, a plating resist film pattern having a thickness of 10 μm is formed thereon, and then a Cu electrode having a thickness of 3 to 10 μm is formed by electrolytic Cu plating. Subsequently, by removing the plating resist film according to a conventional method, a structure in which a circuit using a plating layer is provided on the seed layer can be obtained.

Subsequently, unnecessary portions of the seed layer appearing on the surface after the plating resist film is peeled off are removed, for example. For removing the seed layer, wet etching may be used, and an etching solution suitable for various seed metals may be selected. For example, in the case of overwater, phosphoric acid overwater (a solution containing phosphoric acid and hydrogen peroxide water) , Sulfuric acid / hydrogen peroxide (solution containing sulfuric acid and hydrogen peroxide solution), nitric acid / hydrogen peroxide solution (containing nitric acid and hydrogen peroxide solution), hydrofluoric acid / hydrogen peroxide solution (containing hydrofluoric acid and hydrogen peroxide solution) Solution), ammonia perwater (a solution containing ammonia and hydrogen peroxide solution), and the like. More specifically, the etching of the Cu seed layer can be performed using an etching solution containing phosphoric acid / hydrogen peroxide, sulfuric acid / hydrogen peroxide or nitric acid / hydrogen peroxide. This can be performed using an etchant containing dofluoric acid (NH ₄ F).
In this step, the etching time is appropriately adjusted so that the electrode, the light emitting layer, the light reflecting layer, and the like on the optical semiconductor element are not eroded excessively.

Next, in the step (vii), the structure obtained in the step (vi) is cut into pieces by using a dicing blade or the like according to the purpose. Thereby, an optical semiconductor device having one or more optical semiconductor elements can be obtained. At this time, the cross-sectional property can be improved by cutting at the position of the light reflecting member.
As a cutting method, a known method may be adopted, and it can be cut by a known method such as dicing processing with a rotating blade, laser processing, water jet processing, mold processing, etc., but dicing processing is economical and industrial. This is preferable.

As described above, an optical semiconductor device can be manufactured.
With such an optical semiconductor device manufacturing method of the present invention, it is possible to greatly reduce the types of members, without requiring special protection for prevention of sulfidation of silver plating, and high output. An optical semiconductor device that can withstand driving of an optical semiconductor element, has high dimensional accuracy of the product, has little unevenness and variation in emission color, and can easily manage product characteristics after manufacture can be easily manufactured at low cost. .

  The present invention also provides an optical semiconductor device manufactured by the above-described optical semiconductor device manufacturing method of the present invention.

  Such an optical semiconductor device has few types of members, can withstand driving of high-output optical semiconductor elements without requiring special protection for preventing silver plating sulfidation, and has dimensional accuracy. Therefore, the optical semiconductor device is easy to manage the product characteristics with little unevenness and variation in emission color.

  Further, at this time, it has a circuit for connecting to the mounting substrate and a bonding pad for solder connection or flip chip connection, and two or more optical semiconductor elements may be electrically connected. it can. In this case, what is necessary is just to cut | disconnect so that two or more optical-semiconductor elements may be included in an individualization process.

  In addition, as a method of connecting the optical semiconductor device obtained in this way to the mounting board, mounting by solder reflow, flip chip mounting to the mounting board provided with ball bumps, etc. can be freely performed according to the form and equipment of the final module You can choose.

As mentioned above, if it is a manufacturing method of the member for wafer level optical semiconductor devices of this invention, and the manufacturing method of the optical semiconductor device of this invention using the member for wafer level optical semiconductor devices manufactured by this, if it is an optical semiconductor It is possible to greatly reduce the number of types of components when making the device thinner and smaller, and it is not necessary to use silver-plated components. Therefore, it is possible to easily manufacture a highly reliable optical semiconductor device that can withstand driving of a high-output optical semiconductor element at low cost. Furthermore, it is possible to manufacture in a lump in a state in which the output and wavelength of the optical semiconductor element are selected in advance, and management of product characteristics after manufacture becomes easy. That is, in a semiconductor light-emitting device in which a plurality of light-emitting elements are mounted on a substrate, it is possible to reduce unevenness in color (color temperature difference) in the light-emitting surface. Further, in a light-emitting device manufactured by dividing a substrate for each light-emitting element, it is possible to prevent variations in emission color between the light-emitting devices, and the yield is improved.
Further, by using the light transmissive member, the handleability in the manufacturing process is improved, cracking and chipping during transportation can be prevented, and warpage of the wafer level optical semiconductor device member can be prevented. Furthermore, chemical resistance to chemicals used in the subsequent photolithography process, plating process, etc. can be improved.
In addition, by using a light reflecting member, it is possible to improve the light extraction performance of the optical semiconductor device and to improve the cross-sectional properties during dicing, so that the dimensional accuracy of the product and the stability of the light emission characteristics are improved. And the durability as an optical semiconductor device is further improved. In addition, it is possible to select a thermosetting resin having a low hardness, and it is possible to improve the crack resistance due to thermal shock of the optical semiconductor device and to improve the heat resistance and light resistance.

  EXAMPLES Hereinafter, although this invention is demonstrated concretely using an Example and a comparative example, this invention is not limited to these.

(Measurement of color coordinates (sx))
In addition, the measurement of the color coordinate (sx) of the optical semiconductor module obtained by the Example and the comparative example was performed using the total luminous flux measurement system HM-9100 (manufactured by Otsuka Electronics Co., Ltd.) and the applied current IF = 20 mA. Measured with Moreover, the average value and dispersion | variation ((sigma)) were calculated | required from the measurement result.

Example 1
<Manufacture of wafer level optical semiconductor device components>
Wafer level optical semiconductor device member (A)
As a support substrate, a rubber having a thickness of 725 μm and a diameter of 200 mm (8 inches) and a foam surface of a heat-releasable double-sided adhesive sheet (product name: Riva Alpha No. 3195V, manufactured by Nitto Denko Corporation) is used as the substrate side A support substrate having a pressure-sensitive adhesive sheet provided on one side was attached using a roller. Furthermore, the unnecessary part of the heat-releasable double-sided pressure-sensitive adhesive sheet was cut out and formed into an 8-inch circular shape.
A light-reflective thermosetting resin (product name: KCR-3500WS, manufactured by Shin-Etsu Chemical Co., Ltd.) is applied to the circular member on a predetermined site using a dispensing device so that the width is 400 μm and the height is 300 μm. Temporarily cured at 1 ° C. for 1 hour. Subsequently, as an optical semiconductor element, a plurality of electrode surfaces of BXCD4545 manufactured by Bridgegelux are placed using a chip sorter so as to face the adhesive sheet, and then subjected to heat treatment at 100 ° C. for 1 hour on the adhesive surface. Fixed.

  Next, the support substrate having a plurality of optical semiconductor elements mounted on the pressure-sensitive adhesive sheet surface as described above is placed on the lower mold of a compression molding machine preheated to 150 ° C., and is similarly provided with a release film in advance at 150 ° C. A light-transmitting member was placed on the opposing upper mold heated to. The light-transmitting member is a circle having a diameter of 190 mm, the surface is polished to a mirror surface, and synthetic quartz with a thickness of 500 μm is used. On the side facing the release film, a thermosetting silicone resin (Shin-Etsu Kogyo Co., Ltd.) is used as an adhesive. Product name: KER2300) was thinly applied, and then pressed and temporarily fixed to the release film for 10 seconds. Thereafter, 3 volumes of fumed silica (product name: DM-30 manufactured by Tokuyama Corporation) as a filler with respect to 100 parts by volume of the thermosetting silicone resin (product name: KER2300 manufactured by Shin-Etsu Industry Co., Ltd.) on the lower mold side. Parts, a thermosetting resin composition containing 8 parts by volume of phosphor (manufactured by Phosphortechnology) is supplied, compression molding is performed at 150 ° C. for 5 minutes, and then main curing is performed at 150 ° C. for 3 hours. Carried out. The hardness of the thermosetting resin after molding was 50 on Shore D, and the hardness of the light reflecting member was 82 on Shore D.

  Furthermore, by placing the support substrate side down on a hot plate heated to 180 ° C., the laminate and the heat-peelable double-sided pressure-sensitive adhesive sheet are peeled from the support substrate, and then the heat-peelable double-sided pressure-sensitive adhesive sheet is removed from the laminate. By peeling, a wafer level optical semiconductor device member (A) in which a phosphor was dispersed in a thermosetting resin was produced. In the obtained structure, the thickness of the light transmissive member (synthetic quartz) was 500 μm, and the thickness of the thermosetting resin portion including the phosphor, the filler, and the optical semiconductor element was 300 μm.

(Example 2)
Wafer level optical semiconductor device member (B)
As a support substrate, a rubber having a thickness of 725 μm and a diameter of 200 mm (8 inches) and a foam surface of a heat-releasable double-sided adhesive sheet (product name: Riva Alpha No. 3195V, manufactured by Nitto Denko Corporation) is used as the substrate side A support substrate having a pressure-sensitive adhesive sheet provided on one side was attached using a roller. Furthermore, the unnecessary part of the heat-releasable double-sided pressure-sensitive adhesive sheet was cut out and formed into an 8-inch circular shape. On this circular member, a plurality of BXCD4545 electrodes made by Bridgegelux as optical semiconductor elements are placed using a chip sorter so as to face the adhesive sheet, and then subjected to heat treatment at 100 ° C. for 1 hour for adhesion. Fixed to the surface.

Next, a light-reflective thermosetting resin (product name: KCR-3500WS, manufactured by Shin-Etsu Chemical Co., Ltd.) is applied to the light-transmitting member at a predetermined site using a dispensing device so that the width is 400 μm and the height is 300 μm. It was applied and temporarily cured at 100 ° C. for 1 hour.
Next, the support substrate having a plurality of optical semiconductor elements mounted on the pressure-sensitive adhesive sheet surface as described above is placed on the lower mold of a compression molding machine preheated to 150 ° C., and is similarly provided with a release film in advance at 150 ° C. A light-transmitting member was placed on the opposing upper mold heated to. As a light transmissive member, 10 parts of fumed silica (product name: DM-30 manufactured by Tokuyama Corporation) are used as a filler with respect to 100 parts by volume of thermosetting silicone resin (product name: KER2667 manufactured by Shin-Etsu Kogyo Co., Ltd.). The thermosetting resin composition containing 5 parts by volume and phosphor (manufactured by Phosphotechnology) was compression molded at 150 ° C for 5 minutes, followed by main curing at 150 ° C for 3 hours. A molded body (hardness: Shore D78) having a diameter of 190 mm and a thickness of 500 μm was used. Such a light transmitting member is thinly applied with a thermosetting silicone resin (manufactured by Shin-Etsu Kogyo Co., Ltd., product name: KER2300) as an adhesive on the side facing the release film, and then pressed against the release film for 10 seconds. Fixed. Thereafter, 10 mL of thermosetting silicone resin (manufactured by Shin-Etsu Kogyo Co., Ltd., product name: KER2300) is supplied to the lower mold side, compression molding is performed at 150 ° C. for 5 minutes, and then main curing is performed at 150 ° C. for 3 hours. did. The hardness of the thermosetting resin after molding was 50 on Shore D, and the hardness of the light reflecting member was 82 on Shore D.

  Furthermore, by placing the support substrate side down on a hot plate heated to 180 ° C., the laminate and the heat-peelable double-sided pressure-sensitive adhesive sheet are peeled off from the support base, and then the heat-peelable double-sided pressure-sensitive adhesive sheet is removed from the laminate. By peeling, a wafer level optical semiconductor device member (B) in which the phosphor was dispersed in the light transmitting member was manufactured. The obtained structure was such that the thickness of the light-transmitting member (thermosetting silicone resin) including the phosphor and the filler was 500 μm, and the thickness of the thermosetting resin portion including the optical semiconductor element was 300 μm. It was.

<Manufacture of optical semiconductor devices>
(I) An optical semiconductor device designed to be one device for one optical semiconductor element (optical semiconductor devices (IA) and (IB))
Oxygen: CF ₄ = 70: 30 with respect to the exposed surface of the optical semiconductor element of the wafer level optical semiconductor device members (A) and (B), which is an assembly of optical semiconductor elements, manufactured as described above. The resulting mixed gas plasma was irradiated for 60 seconds to roughen the surface by plasma etching. Subsequently, a seed layer was formed in the order of Ti (film thickness: 100 nm) and Cu (film thickness: 400 nm) by sputtering on the etched surface. As the target, commercially available high purity Ti and high purity Cu were used.

  Subsequently, a positive photosensitive material (product name: SIPR-7126, manufactured by Shin-Etsu Chemical Co., Ltd.) is coated on the surface on which the seed layer is formed using a spin coating method so that the film thickness becomes 10 μm. The film was formed by heating at 1 ° C. for 1 minute. Then, using a mask having a plurality of light-shielding portions, it is exposed with a mask aligner, developed with a commercially available 2.38 mass% TMAH (tetramethylammonium hydroxide) aqueous solution to form an opening, and subsequently 3 mass%. It was immersed in sulfuric acid water for 30 seconds and washed.

Then, it was immersed in Cu plating solution (Nippon Electroplating Engineers Co., Ltd. product: Microfab Cu200), and Cu plating was performed by flowing a constant current at 25 ° C. for 20 minutes, thereby laminating Cu having a thickness of 4 μm. Next, the substrate surface after electrolytic plating is washed with pure water and blown with nitrogen to dry the substrate surface, and then immersed in PGMEA (propylene glycol-1-monomethyl ether-2-acetate). The photosensitive material was peeled off, washed with isopropyl alcohol, and blown with nitrogen to dry the substrate surface. Subsequently, etching was performed using phosphoric acid / hydrogen peroxide as an etching solution for the Cu seed layer, and further, etching was performed using buffered hydrofluoric acid (NH ₄ F) as an etching solution for the Ti seed layer. Thereafter, the substrate surface was washed with pure water and blown with nitrogen to dry the substrate surface and peel off the seed layer.

Next, the obtained structure is cut by dicing using a rotating blade with a portion corresponding to the center of the light reflecting member as a dicing street, washed with pure water, and dried, so that each optical semiconductor device has one optical semiconductor element. (Outer dimensions as package: 2.0 × 2.0 × 0.8 mm). In addition, what was manufactured using the member (A) for wafer level optical semiconductor devices is an optical semiconductor device (IA), and what was manufactured using the member (B) for wafer level optical semiconductor devices is an optical semiconductor device (IB). These optical semiconductor devices are thin and have high product dimensional accuracy.
Further, any 10 of the obtained optical semiconductor devices (IA) and (IB) are individually mounted on an aluminum heat dissipation star board by solder reflow, and the optical semiconductor device is mounted on the module. It was. When the color coordinate (sx) at IF = 20 mA of these modules was measured, the module mounted with the optical semiconductor device (IA) had sx = 0.398 and σ = 0.001, and the optical semiconductor device (I The module in which -B) was mounted was sx = 0.376 and σ = 0.001. In addition, since a light reflecting member having a Shore D of 82 was used, the handling property during the process was excellent, and the cross section after dicing was good.

  Thus, the optical semiconductor devices (IA) and (IB) manufactured using the wafer level optical semiconductor device members (A) and (B) have excellent handling properties and good dicing characteristics. The color variation (σ value) was very narrow, and the product characteristics were good. In addition, since the number of members used is small and no silver-plated members are used, there is no need for special protection to prevent sulfidation, and a highly reliable optical semiconductor device that can withstand the driving of high-power optical semiconductor elements. Met.

(Comparative Example 1)
KER-2500LV (manufactured by Shin-Etsu Chemical Co., Ltd.) as a light-reflective thermosetting resin that is a material of the light-reflecting member, nano alumina (manufactured by Nippon Aerosil Co., Ltd., product names: AEROXIDE, AluC805, average primary particle size) 13 nm) 1.5 parts by mass, wafer except that 10 parts by mass of titanium oxide (product name: PT-301, average primary particle size 250 nm) manufactured by Ishihara Sangyo Co., Ltd. was added and stirred well. The wafer level optical semiconductor device member (C) was produced in the same manner as the level optical semiconductor device member (A). The hardness of the thermosetting resin after molding was 50 for Shore D, the hardness of the light reflecting member was less than 20 for Shore D, and 70 for Type A.
Furthermore, an optical semiconductor device (IC) was obtained through the same steps as the manufacturing of the optical semiconductor device (IA) described above.
Arbitrary five of the obtained optical semiconductor devices (I-C) were individually mounted on a heat dissipation star substrate made of aluminum by solder reflow to form a module on which the optical semiconductor device was mounted. When the color coordinate (sx) at IF = 20 mA of this module was measured, sx = 0.395 and σ = 0.016. Further, since a light reflecting member having a Shore D of less than 20 was used, the handling property during the process was inferior, and the cross-section after dicing was rough and could not be obtained. As a result, variation in color coordinates (σ ) Became big.

(Comparative Example 2)
As an optical semiconductor element, BXCD4545 manufactured by Bridgegelux is used, and as a lead frame, a die bond material (product name KER-3000-M2 manufactured by Shin-Etsu Chemical Co., Ltd.) is used in an SMD5050 package (I-CHIUN PRECISION INDUSTRY CO., Ltd., resin part PPA). Was fixed by heating and curing with a die bonder, and wire bonding was performed using a wire bonder using a gold wire (manufactured by Tanaka Electronics Co., Ltd., product name: FA, 25 μm). Subsequently, an appropriate amount of sealing resin containing 3 parts by volume of a phosphor (manufactured by Phosphotechnology) is dispensed with respect to 100 parts by volume of a thermosetting silicone resin (product name: KER-2300, manufactured by Shin-Etsu Chemical Co., Ltd.). 160 optical semiconductor devices (III) were manufactured. The curing conditions for the sealing resin are 150 ° C. and 4 hours.
Furthermore, any 10 of the obtained optical semiconductor devices (III) were individually mounted on an aluminum heat dissipation star substrate by solder reflow to obtain a module on which the optical semiconductor devices were mounted. When the color coordinate (sx) at IF = 20 mA of this module was measured, sx = 0.389 and σ = 0.078.

The optical semiconductor device thus obtained has a large color variation (σ value), and it cannot be said that the product characteristics are very good.
Further, since this package uses a silver electrode for the lead frame, sulfidation proceeds.

  As described above, according to the method for manufacturing a wafer level optical semiconductor device member of the present invention, it is possible to greatly reduce the types of members in reducing the thickness and size of the optical semiconductor device. Since it does not need to be used at all, it does not require special protection to prevent sulfidation, and has high heat resistance and light resistance. Therefore, a highly reliable optical semiconductor device that can withstand the driving of high-power optical semiconductor elements is low. A member for a wafer level optical semiconductor device that can be easily manufactured at low cost could be manufactured. Furthermore, the output and wavelength of the optical semiconductor element can be collectively molded in a state in which the output and wavelength are selected in advance, and the product characteristics after manufacture can be easily managed. That is, in the semiconductor light emitting device in which a plurality of light emitting elements are mounted on the substrate, it is possible to reduce the unevenness of the light emission color (the variation in the color coordinate sx) in the light emitting surface. In addition, in a light emitting device manufactured by dividing a substrate for each light emitting element, it is possible to prevent variations in emission color between the light emitting devices, and the yield is improved.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

DESCRIPTION OF SYMBOLS 1 ... Adhesive sheet, 2 ... Support substrate, 3 ... Optical semiconductor element, 4 ... Thermosetting resin composition,
4 '... thermosetting resin cured product, 5 ... release film, 6 ... compression molding machine, 7 ... laminate,
8 ... Seed layer, 9 ... Plating resist film, 10 ... Bonding pad,
11: Light transmissive member, 12: Light reflecting member.

Claims (15)

In the method of manufacturing a member for a wafer level optical semiconductor device in which a plurality of optical semiconductor elements are held on a light transmissive member via a thermosetting resin,
(I) a step of mounting the electrode surfaces of a plurality of optical semiconductor elements so as to face the pressure-sensitive adhesive sheet side on the pressure-sensitive adhesive sheet surface of the support substrate provided with the pressure-sensitive adhesive sheet on one side;
(Ii) supplying a thermosetting resin composition between the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the support substrate is mounted and the light transmissive member, and the thermosetting with the support substrate and the light transmissive member. A cured product of the thermosetting resin composition on the pressure-sensitive adhesive sheet surface on which the optical semiconductor element of the supporting substrate is mounted by molding and curing the thermosetting resin composition with the adhesive resin composition sandwiched therebetween. And obtaining a laminate in which the light transmissive member is laminated,
(Iii) a step of peeling the support substrate and the pressure-sensitive adhesive sheet from the laminate,
A method comprising:
In the step (i) or the step (ii), a light reflecting member including a light reflecting thermosetting resin and having a hardness of 20 or more in Shore D is installed in a portion corresponding to a dicing line that is a device outer peripheral portion. A method for producing a member for a wafer level optical semiconductor device.   In the step (i), before mounting the optical semiconductor element on the pressure-sensitive adhesive sheet surface, after mounting the optical semiconductor element, or simultaneously with mounting the optical semiconductor element, the light reflecting member is mounted on the pressure-sensitive adhesive sheet surface. The method for producing a member for a wafer level optical semiconductor device according to claim 1, wherein the member is installed.   2. The wafer level optical semiconductor device member according to claim 1, wherein, in the step (ii), the light reflecting member is disposed on a surface of the light transmissive member that contacts the thermosetting resin composition. 3. Manufacturing method.   As the light reflecting member, one containing at least one light reflecting thermosetting resin selected from silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylate resin, and urethane resin is used. The manufacturing method of the member for wafer level optical semiconductor devices as described in any one of Claims 1-3.   As the light reflecting member, one containing either or both of an inorganic filler and a diffusing material is used, and the inorganic filler is silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, barium carbonate. 5. The method according to claim 1, wherein the diffusing material is at least one selected from barium titanate, titanium oxide, aluminum oxide, and silicon oxide. The manufacturing method of the member for wafer level optical semiconductor devices of 1 item | term.   2. The thermosetting resin composition comprising one or more resins selected from silicone resins, organically modified silicone resins, epoxy resins, modified epoxy resins, acrylate resins, and urethane resins. The manufacturing method of the member for wafer level optical semiconductor devices as described in any one of Claim 5.   The wafer according to any one of claims 1 to 6, wherein the thermosetting resin composition includes a phosphor particle for the purpose of wavelength conversion from the optical semiconductor element. Level optical semiconductor device member manufacturing method.   As the thermosetting resin composition, one containing at least one filler selected from silicone, silica, alumina, zirconia, and titania is used, and the amount of the filler added in the thermosetting resin composition The method for producing a member for a wafer level optical semiconductor device according to any one of claims 1 to 7, wherein the volume of the resin component is more than 0 volume part and 90 volume parts or less with respect to 100 volume parts of the resin component.   The light transmissive member is selected from an inorganic material selected from glass, quartz and sapphire, a resin material selected from a silicone resin, an organically modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylate resin and a urethane resin. The method for producing a member for a wafer level optical semiconductor device according to any one of claims 1 to 8, wherein a material containing at least seeds is used.   10. The wafer level light according to claim 1, wherein the light transmissive member includes phosphor particles intended for wavelength conversion from the optical semiconductor element. 11. Manufacturing method of member for semiconductor devices.   As the light transmissive member, a material containing one or more fillers selected from silicone, silica, alumina, zirconia, and titania is used, and the amount of the filler added is 100 volume of the material composition of the light transmissive member. The method for producing a member for a wafer level optical semiconductor device according to any one of claims 1 to 10, wherein the volume is more than 0 volume part and 90 volume parts or less with respect to a part.   The molding of the thermosetting resin composition is performed by compression molding using a compression molding machine provided with a release film on a surface in contact with the light-transmitting member. The manufacturing method of the member for wafer level optical semiconductor devices of 1 item | term. An optical semiconductor device manufacturing method comprising:
The optical semiconductor element on the electrode surface of each optical semiconductor element of the member for wafer level optical semiconductor device obtained by the method for manufacturing a member for wafer level optical semiconductor device according to any one of claims 1 to 12. A method for manufacturing an optical semiconductor device comprising: forming a circuit for connecting a semiconductor chip to a mounting substrate, or a bonding pad for solder connection or flip chip connection, and then dicing into individual pieces. The method for manufacturing the optical semiconductor device includes:
(Iv) forming a seed layer after performing roughening by etching on the surface of the wafer level optical semiconductor device member where the optical semiconductor element is exposed;
(V) forming a plating resist film on the surface on which the seed layer is formed, performing development after exposure using a photomask, and forming an opening on the electrode surface of each optical semiconductor element;
(Vi) A circuit for connecting the optical semiconductor element to the mounting substrate using an electrolytic plating method or an electroless plating method, or a bonding pad for solder connection or flip chip connection on the surface where the opening is formed. After forming, removing the plating resist film, and subsequently removing unnecessary portions of the seed layer that appeared on the surface after peeling of the plating resist film by etching;
(Vii) a step of dicing into individual pieces,
The method of manufacturing an optical semiconductor device according to claim 13, comprising: Producing an optical semiconductor device in which two or more optical semiconductor elements are electrically connected by cutting so as to include two or more optical semiconductor elements when dicing into individual pieces. 15. The method for manufacturing an optical semiconductor device according to claim 13, wherein the optical semiconductor device is manufactured .

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