JP6128906B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6128906B2 JP6128906B2 JP2013051819A JP2013051819A JP6128906B2 JP 6128906 B2 JP6128906 B2 JP 6128906B2 JP 2013051819 A JP2013051819 A JP 2013051819A JP 2013051819 A JP2013051819 A JP 2013051819A JP 6128906 B2 JP6128906 B2 JP 6128906B2
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- film
- insulating film
- transistor
- oxide semiconductor
- oxide
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- 239000004065 semiconductor Substances 0.000 title claims description 376
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Description
本実施の形態では、本発明の一態様である半導体装置、及び当該半導体装置の作製方法について図面を参照して説明する。
本実施の形態では、実施の形態1と異なる構造のトランジスタについて、図5を用いて説明する。本実施の形態に示すトランジスタ100は、実施の形態1に示すトランジスタと比較して、トップゲート構造のトランジスタである点が異なる。
本実施の形態では、実施の形態1及び実施の形態2と異なる構造のトランジスタについて、図7を用いて説明する。本実施の形態に示すトランジスタ120は、実施の形態2に示すトランジスタ100と比較して、ゲート電極が一対の電極が重なっていない点が異なる。また、酸化物半導体膜にドーパントが添加されている点が異なる。
本実施の形態では、実施の形態1乃至実施の形態3と異なる構造のトランジスタについて、図8を用いて説明する。本実施の形態に示すトランジスタ130は、他の実施の形態に示すトランジスタと比較して、酸化物半導体膜の構造が異なり、チャネル領域と、ソース領域及びドレイン領域との間に、電界緩和領域を有する。
本実施の形態では、実施の形態1乃至実施の形態4と異なる構造のトランジスタについて、図9を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態5と異なる構造のトランジスタについて、図10を用いて説明する。本実施の形態に示すトランジスタは、酸化物半導体膜を介して対向する複数のゲート電極を有することを特徴とする。なお、本実施の形態では、実施の形態2に示すトランジスタを用いて説明するが、適宜他の実施の形態と組み合わせることができる。
本実施の形態では、実施の形態1乃至実施の形態6に示すトランジスタにおいて、酸化物半導体膜中に含まれる水素濃度を低減したトランジスタの作製方法について説明する。ここでは、代表的に実施の形態1及び実施の形態2を用いて説明するが、適宜他の実施の形態と組み合わせることができる。なお、本実施の形態に示す工程の一以上と、実施の形態1及び実施の形態2に示すトランジスタの作製工程とが組み合わさればよく、全て組み合わせる必要はない。
本実施の形態では、下部に第1の半導体材料を用いたトランジスタを有し、上部に第2の半導体材料を用いたトランジスタを有する半導体装置であって、第1の半導体材料を用いたトランジスタに半導体基板を用いた構造を、図11を用いて説明する。
先の実施の形態で示した半導体装置の一例としては、中央演算処理装置、マイクロプロセッサ、マイクロコンピュータ、記憶装置、イメージセンサ、電気光学装置、発光表示装置等がある。また、該半導体装置をさまざまな電子機器に適用することができる。電子機器としては、例えば、表示装置、照明装置、パーソナルコンピュータ、ワードプロセッサ、画像再生装置、ポータブルCDプレーヤ、ラジオ、テープレコーダ、ヘッドホンステレオ、ステレオ、時計、コードレス電話子機、トランシーバ、携帯無線機、携帯電話、スマートフォン、電子書籍、自動車電話、携帯型ゲーム機、電卓、携帯情報端末、電子手帳、電子翻訳機、音声入力機器、ビデオカメラ、デジタルスチルカメラ、電気シェーバ、高周波加熱装置、電気炊飯器、電気洗濯機、電気掃除機、温水器、扇風機、毛髪乾燥機、エアコンディショナー、加湿器、除湿器、空調設備、食器洗浄器、食器乾燥器、衣類乾燥器、布団乾燥器、電気冷蔵庫、電気冷凍庫、電気冷凍冷蔵庫、DNA保存用冷凍庫、懐中電灯、工具、煙感知器、医療機器、誘導灯、信号機、ベルトコンベア、エレベータ、エスカレータ、産業用ロボット、電力貯蔵システム、電気自動車、ハイブリッド車、プラグインハイブリッド車、装軌車両、原動機付自転車、自動二輪車、電動車椅子、ゴルフ用カート、船舶、潜水艦、ヘリコプター、航空機、ロケット、人工衛星、宇宙探査機や惑星探査機、宇宙船等がある。本実施の形態では、先の実施の形態で示した半導体装置を、携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図13乃至図16を用いて説明する。
Claims (5)
- ゲート電極と、
前記ゲート電極の一部とゲート絶縁膜を介して重なる領域を有する酸化物半導体膜と、
前記ゲート電極と前記ゲート絶縁膜との間の窒化物半導体膜と、
前記酸化物半導体膜に接する領域を有する一対の電極と、を有し、
前記ゲート絶縁膜は、膜密度が2.26g/cm3以上2.63g/cm3以下であり、
電子スピン共鳴法によって計測される信号において、g値が2.001に現れる信号のスピン密度が2×1015spins/cm3以下であることを特徴とする半導体装置。 - 請求項1において、
前記酸化物半導体膜は、前記ゲート絶縁膜を介して前記ゲート電極上に設けられ、
前記酸化物半導体膜の露出部を覆う絶縁膜を有し、
前記絶縁膜は、膜密度が2.26g/cm3以上2.63g/cm3以下であり、
電子スピン共鳴法によって計測される信号において、g値が2.001に現れる信号のスピン密度が2×1015spins/cm3以下であることを特徴とする半導体装置。 - 請求項1において、
前記ゲート電極は、前記ゲート絶縁膜を介して前記酸化物半導体膜上に設けられ、
前記酸化物半導体膜の前記ゲート絶縁膜と接する面とは反対の面において接する領域を有する絶縁膜を有し、
前記絶縁膜は、膜密度が2.26g/cm3以上2.63g/cm3以下であり、
電子スピン共鳴法によって計測される信号において、g値が2.001に現れる信号のスピン密度が2×1015spins/cm3以下であることを特徴とする半導体装置。 - 請求項2又は請求項3において、
前記絶縁膜は、酸化シリコンまたは酸化窒化シリコンであることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記ゲート絶縁膜は、酸化シリコンまたは酸化窒化シリコンであることを特徴とする半導体装置。
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JP2013051819A JP6128906B2 (ja) | 2012-04-13 | 2013-03-14 | 半導体装置 |
PCT/JP2013/060766 WO2013154115A1 (en) | 2012-04-13 | 2013-04-03 | Semiconductor device |
KR1020147028390A KR102107255B1 (ko) | 2012-04-13 | 2013-04-03 | 반도체 장치 |
US13/856,452 US9054200B2 (en) | 2012-04-13 | 2013-04-04 | Semiconductor device |
TW102112372A TWI623105B (zh) | 2012-04-13 | 2013-04-08 | 半導體裝置 |
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JP2013051819A JP6128906B2 (ja) | 2012-04-13 | 2013-03-14 | 半導体装置 |
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JP (1) | JP6128906B2 (ja) |
KR (1) | KR102107255B1 (ja) |
TW (1) | TWI623105B (ja) |
WO (1) | WO2013154115A1 (ja) |
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US8901556B2 (en) | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
KR20230003262A (ko) * | 2012-07-20 | 2023-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
WO2014061535A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
DE102014208859B4 (de) * | 2013-05-20 | 2021-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
US9299855B2 (en) | 2013-08-09 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having dual gate insulating layers |
US9443987B2 (en) | 2013-08-23 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TW202203465A (zh) | 2013-10-10 | 2022-01-16 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
KR102283814B1 (ko) | 2013-12-25 | 2021-07-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9318618B2 (en) * | 2013-12-27 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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TWI666776B (zh) * | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
WO2016128853A1 (en) * | 2015-02-09 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
WO2017029576A1 (en) * | 2015-08-19 | 2017-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
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TWI605587B (zh) | 2015-11-02 | 2017-11-11 | 聯華電子股份有限公司 | 半導體元件及其製造方法 |
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JP2018049919A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社ジャパンディスプレイ | 表示装置 |
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