JP6119240B2 - Light emitting device - Google Patents
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- JP6119240B2 JP6119240B2 JP2012283814A JP2012283814A JP6119240B2 JP 6119240 B2 JP6119240 B2 JP 6119240B2 JP 2012283814 A JP2012283814 A JP 2012283814A JP 2012283814 A JP2012283814 A JP 2012283814A JP 6119240 B2 JP6119240 B2 JP 6119240B2
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- 239000000758 substrate Substances 0.000 claims description 63
- 239000000945 filler Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 239000004954 Polyphthalamide Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010291 electrical method Methods 0.000 description 2
- 238000009503 electrostatic coating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 SiN Chemical class 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Led Device Packages (AREA)
Description
本発明は、発光装置に関する。 The present invention relates to a light emitting device.
従来、複数の発光素子からなる直列回路を蛇行させて基板上に配置することにより、アノードとカソードとを大きく離間させ、これらの間で生じるイオンマイグレーションを抑制する発光装置が提案された（特許文献１参照）。 Conventionally, a light-emitting device has been proposed in which a series circuit composed of a plurality of light-emitting elements is meandered and arranged on a substrate so that the anode and the cathode are largely separated from each other and ion migration generated between them is suppressed (Patent Document) 1).
しかしながら、従来の発光装置では、アノードとカソードとが大きく離間する結果、これらの間に位置する基板の上面が大きく露出してしまい、基板の上面における反射率が低下するという問題があった。 However, in the conventional light emitting device, the anode and the cathode are largely separated from each other. As a result, the upper surface of the substrate located between them is greatly exposed, and the reflectance on the upper surface of the substrate is lowered.
そこで、本発明は、イオンマイグレーションの誘発を回避しつつ、基板の上面における反射率の低下を防止する新たな発光装置を提供することを目的とする。 Therefore, an object of the present invention is to provide a new light-emitting device that prevents a reduction in reflectance on the upper surface of a substrate while avoiding induction of ion migration.
本発明によれば、上記課題は、次の手段により解決される。すなわち、基板と、前記基板上に載置される複数の発光素子と、前記基板上に設けられ前記複数の発光素子に電気的に接続される第１電極及び第２電極と、前記第１電極の第１領域と前記第２電極の第２領域とに接続部材を介して正負の電極がそれぞれ接続される保護素子と、を備えた発光装置であって、前記第１電極と前記第２電極とから絶縁された光反射膜が付着する導電部材を前記基板上における前記第１領域と前記第２領域との間に備えることを特徴とする発光装置である。 According to the present invention, the above problem is solved by the following means. That is, a substrate, a plurality of light emitting elements mounted on the substrate, a first electrode and a second electrode provided on the substrate and electrically connected to the plurality of light emitting elements, and the first electrode A light emitting device comprising: a protective element to which a positive electrode and a negative electrode are respectively connected to a first region of the second electrode and a second region of the second electrode via a connecting member, wherein the first electrode and the second electrode A light-emitting device comprising a conductive member to which a light reflecting film insulated from the first and second regions is provided on the substrate.
以下に、添付した図面を参照しつつ、本発明を実施するための形態について説明する。 EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, referring attached drawing.
図１は、本発明の実施形態に係る発光装置の模式的斜視図であり、図２は、本発明の実施形態に係る発光装置の模式的平面図である。 FIG. 1 is a schematic perspective view of a light emitting device according to an embodiment of the present invention, and FIG. 2 is a schematic plan view of the light emitting device according to an embodiment of the present invention.
図１、２に示すように、本発明の実施形態に係る発光装置１は、基板２と、基板２上に載置される複数の発光素子３と、基板２上に設けられ複数の発光素子３に電気的に接続される第１電極４及び第２電極５と、第１電極４の第１領域４ａと第２電極５の第２領域５ａとに接続部材６（例：ワイヤ）を介して正負の電極がそれぞれ接続される保護素子７と、を備えた発光装置であって、第１電極４と第２電極５とから絶縁された光反射膜９が付着する導電部材８を基板２上における第１領域４ａと第２領域５ａとの間に備える。 As shown in FIGS. 1 and 2, a light emitting device 1 according to an embodiment of the present invention includes a substrate 2, a plurality of light emitting elements 3 placed on the substrate 2, and a plurality of light emitting elements provided on the substrate 2. The first electrode 4 and the second electrode 5 that are electrically connected to the third electrode 3, and the first region 4a of the first electrode 4 and the second region 5a of the second electrode 5 via a connecting member 6 (eg, wire) And a protective element 7 to which positive and negative electrodes are respectively connected, and a conductive member 8 to which a light reflecting film 9 insulated from the first electrode 4 and the second electrode 5 is attached is attached to the substrate 2. It is provided between the first region 4a and the second region 5a.
第１電極４の第１領域４ａと第２電極５の第２領域５ａとは、保護素子７の正負の電極が接続される領域（例：アノードとして機能する領域、カソードとして機能する領域）であるため電位差が大きく（例えば１２Ｖ以上）、イオンマイグレーションの誘発を回避するためにある程度離して設けられている。しかしながら、第１電極４の第１領域４ａと第２電極５の第２領域５ａとを離して設けると、これら領域の間に位置する基板２の上面における反射率が低下する。そこで、本発明の実施形態に係る発光装置１では、これら領域の間に導電部材８を設けることにした。この導電部材８は、光反射膜９が付着されたものであるとともに、第１電極４と第２電極５とから絶縁されたものであるため、本発明の実施形態に係る発光装置１によれば、イオンマイグレーションの誘発を回避しつつ、基板２上面における反射率の低下を防止することができる。 The first region 4a of the first electrode 4 and the second region 5a of the second electrode 5 are regions to which the positive and negative electrodes of the protection element 7 are connected (for example, a region functioning as an anode and a region functioning as a cathode). Therefore, the potential difference is large (for example, 12 V or more), and they are provided apart to some extent in order to avoid induction of ion migration. However, if the first region 4a of the first electrode 4 and the second region 5a of the second electrode 5 are provided apart from each other, the reflectance on the upper surface of the substrate 2 located between these regions is lowered. Therefore, in the light emitting device 1 according to the embodiment of the present invention, the conductive member 8 is provided between these regions. Since the conductive member 8 has the light reflecting film 9 attached thereto and is insulated from the first electrode 4 and the second electrode 5, the light emitting device 1 according to the embodiment of the present invention is used. For example, it is possible to prevent a decrease in reflectance on the upper surface of the substrate 2 while avoiding induction of ion migration.
以下、各部材について詳細に説明する。 Hereinafter, each member will be described in detail.
［基板］
基板２には、発光素子３から放出される光や外光などが透過しにくいある程度の強度を有する絶縁性部材を好ましく用いることができる。このような絶縁性部材としては、例えば、セラミックス（Ａｌ２Ｏ３、ＡｌＮなど）、フェノール樹脂、エポキシ樹脂、ポリイミド樹脂、ＢＴレジン、ポリフタルアミド（ＰＰＡ）などの樹脂を一例として挙げることができる。これらの樹脂に、ガラス繊維や、ＳｉＯ２、ＴｉＯ２、Ａｌ２Ｏ３などの無機フィラーを混合すれば、機械的強度の向上、熱膨張率の低減、及び光反射率の向上などを図ることができる。
[substrate]
For the substrate 2, an insulating member having a certain degree of strength that is difficult to transmit light emitted from the light emitting element 3 and external light can be preferably used. Examples of such an insulating member include resins such as ceramics (Al 2 O 3 , AlN, etc.), phenol resins, epoxy resins, polyimide resins, BT resins, polyphthalamide (PPA), and the like. . If these fibers are mixed with glass fibers or inorganic fillers such as SiO 2 , TiO 2 , Al 2 O 3 , the mechanical strength is improved, the thermal expansion coefficient is reduced, and the light reflectance is improved. Can do.
基板２の形状は、特に限定されない。図１では、平面板状の基板２を一例として示したが、例えば凹部（キャビティ）などが設けられた基板など、平面板状の基板２以外にも様々な形状をした基板を用いることができる。 The shape of the substrate 2 is not particularly limited. In FIG. 1, the planar plate-like substrate 2 is shown as an example, but substrates having various shapes other than the planar plate-like substrate 2 such as a substrate provided with a recess (cavity) can be used. .
［複数の発光素子］
複数の発光素子３には、例えば発光ダイオードを用いることができる。複数の発光素子３は、フリップチップ実装される。フリップチップ実装する場合は、発光素子３の基板層（例えばサファイア）を上面に向け、発光層（例えばＧａＮ）を実装面側に配置し、実装する。こうすることで、発光層から直接得られる光よりも、発光層から基板層に抜ける光のほうがより多くなる。つまり、より高い効率が得られる。これは、基板層の屈折率よりも、発光層の屈折率のほうが高いためである。なお、ワイヤーボンディングやダイボンディングなどで複数の発光素子３を実装することも可能である。
[Multiple light emitting devices]
For the plurality of light emitting elements 3, for example, light emitting diodes can be used. The plurality of light emitting elements 3 are flip-chip mounted. In the case of flip-chip mounting, the substrate layer (for example, sapphire) of the light emitting element 3 is directed to the upper surface, and the light emitting layer (for example, GaN) is disposed on the mounting surface side for mounting. By doing so, more light passes from the light emitting layer to the substrate layer than light directly obtained from the light emitting layer. That is, higher efficiency can be obtained. This is because the refractive index of the light emitting layer is higher than the refractive index of the substrate layer. A plurality of light emitting elements 3 can be mounted by wire bonding or die bonding.
［第１電極及び第２電極］
第１電極４及び第２電極５には、基板２の材質に応じた様々な部材を用いることができる。例えば基板２としてセラミックなどを用いる場合には、セラミックスシートの焼成温度にも耐え得る高融点を有する部材を第１電極４及び第２電極５として用いるのが好ましい。このような部材の一例としては、例えば、タングステン、モリブデンのような高融点の金属を挙げることができる。
[First electrode and second electrode]
Various members corresponding to the material of the substrate 2 can be used for the first electrode 4 and the second electrode 5. For example, when ceramic or the like is used as the substrate 2, it is preferable to use a member having a high melting point that can withstand the firing temperature of the ceramic sheet as the first electrode 4 and the second electrode 5. An example of such a member is a high melting point metal such as tungsten or molybdenum.
これらの金属の上には、さらに、単層または多層の金属膜を形成することができ、このように金属膜が形成されたものを第１電極４及び第２電極５として用いることもできる。このような金属膜の一例としては、銀、銅、金、アルミニウム、ロジウムなどの単体又はこれらの合金を挙げることができるが、熱伝導率などに優れているため、金の単体を用いることが特に好ましい。金属膜の膜厚は、これが単層である場合は、０．０５μｍ〜５０μｍ程度であることが好ましく、これが多層膜である場合は、層全体の厚さを０．０５μｍ〜５０μｍ程度とするのが好ましい。 A single-layer or multilayer metal film can be further formed on these metals, and the metal film thus formed can be used as the first electrode 4 and the second electrode 5. As an example of such a metal film, a simple substance such as silver, copper, gold, aluminum, rhodium or an alloy thereof can be cited. However, since it has excellent thermal conductivity, a simple substance of gold can be used. Particularly preferred. The thickness of the metal film is preferably about 0.05 μm to 50 μm when it is a single layer, and the thickness of the entire layer is about 0.05 μm to 50 μm when it is a multilayer film. Is preferred.
［保護素子］
保護素子７には、例えば、ツェナー・ダイオードを用いることができる。保護素子７の正負の電極は、第１電極４の第１領域４ａと第２電極５の第２領域５ａとにワイヤボンドやフリップチップ実装などによって接続される。
[Protective element]
For example, a Zener diode can be used as the protection element 7. The positive and negative electrodes of the protection element 7 are connected to the first region 4a of the first electrode 4 and the second region 5a of the second electrode 5 by wire bonding or flip chip mounting.
［導電部材］
導電部材８は、第１電極４と第２電極５とから絶縁されており、基板２上における第１電極４の第１領域４ａと第２電極５の第２領域５ａとの間に設けられる。
[Conductive member]
The conductive member 8 is insulated from the first electrode 4 and the second electrode 5, and is provided between the first region 4 a of the first electrode 4 and the second region 5 a of the second electrode 5 on the substrate 2. .
導電部材８は、第１電極４の第１領域４ａと第２電極５の第２領域５ａとの最短距離が例えば１ｍｍである場合には、第１電極４の第１領域４ａと第２電極５の第２領域５ａとからそれぞれ０．０５ｍｍ〜０．２ｍｍ程度離間させて配置されることが好ましい。このようにすれば、電気的な方法（例：めっき、電着塗装、静電塗装）を用いて導電部材８に光反射膜９を付着させる際に、第１領域４ａと導電部材８との間や第２領域５ａと導電部材８との間を光反射膜９で覆うことが容易になる（図３（ｃ）参照）。 When the shortest distance between the first region 4a of the first electrode 4 and the second region 5a of the second electrode 5 is, for example, 1 mm, the conductive member 8 has the first region 4a of the first electrode 4 and the second electrode. It is preferable that the second region 5a is spaced from the second region 5a by about 0.05 mm to 0.2 mm. In this way, when the light reflecting film 9 is attached to the conductive member 8 using an electrical method (eg, plating, electrodeposition coating, electrostatic coating), the first region 4a and the conductive member 8 It is easy to cover the gap between the second region 5a and the conductive member 8 with the light reflecting film 9 (see FIG. 3C).
導電部材８は、基板２が複数連結された集合基板の状態であるときに第１電極４と第２電極５とに電気的に接続されていた部材であることが好ましく、特に、第１電極４及び第２電極５と同じ材質からなることが好ましい。このようにすれば、集合基板の状態で第１電極４及び第２電極５と導電部材８とが共通の電位を持つため、基板２が複数連結された集合基板の状態であるときに第１電極４及び第２電極５に通電することができる。このため、電気的な方法（例：めっき、電着塗装、静電塗装）によって第１電極４、第２電極５、及び導電部材８に光反射膜９を付着させることが容易になる。 The conductive member 8 is preferably a member that is electrically connected to the first electrode 4 and the second electrode 5 when a plurality of substrates 2 are connected to each other, and particularly the first electrode. 4 and the second electrode 5 are preferably made of the same material. In this case, since the first electrode 4 and the second electrode 5 and the conductive member 8 have a common potential in the state of the collective substrate, the first electrode 4 is in the state of the collective substrate in which a plurality of substrates 2 are connected. The electrode 4 and the second electrode 5 can be energized. For this reason, it becomes easy to adhere the light reflection film 9 to the first electrode 4, the second electrode 5, and the conductive member 8 by an electrical method (for example, plating, electrodeposition coating, electrostatic coating).
上記の場合、図１に示すように、第１電極４及び第２電極５と導電部材８とは、個別の基板２の内部を通って個別の基板２の側面から露出するよう設けられることが好ましい（図１中の基板２の側面に示した第１電極４、第２電極５、及び導電部材８を参照。）。このようにすれば、第１電極４及び第２電極５と導電部材８とを電気的に接続する内部配線を、集合基板を個別の基板２に分割する際に切断することができる。つまり、集合基板の内部には、第１電極４、第２電極５、及び導電部材８を互いに接続する内部配線が埋まっており、この内部配線は、集合基板の状態において集合基板の上面には露出しない。しかし、この内部配線は、集合基板が個別の基板２へと分割される際に集合基板とともに切断され、その切断面が集合基板の分割面（個別の基板２の側面）から露出する。これにより、第１電極４及び第２電極５と導電部材８とは、互いに電気的に接続されていないものとなり、個別の基板２の内部を通って個別の基板２の側面から露出することになる。 In the above case, as shown in FIG. 1, the first electrode 4 and the second electrode 5 and the conductive member 8 may be provided so as to be exposed from the side surface of the individual substrate 2 through the inside of the individual substrate 2. Preferably (see the first electrode 4, the second electrode 5, and the conductive member 8 shown on the side surface of the substrate 2 in FIG. 1). In this way, the internal wiring that electrically connects the first electrode 4 and the second electrode 5 and the conductive member 8 can be cut when the collective substrate is divided into the individual substrates 2. In other words, the internal wiring that connects the first electrode 4, the second electrode 5, and the conductive member 8 to each other is buried inside the collective substrate, and this internal wiring is placed on the upper surface of the collective substrate in the collective substrate state. Not exposed. However, the internal wiring is cut together with the collective substrate when the collective substrate is divided into individual substrates 2, and the cut surface is exposed from the divided surface of the collective substrate (the side surface of the individual substrate 2). Thus, the first electrode 4 and the second electrode 5 and the conductive member 8 are not electrically connected to each other, and are exposed from the side surfaces of the individual substrates 2 through the interior of the individual substrates 2. Become.
なお、第１電極４及び第２電極５については、これらが基板２の内部を通って基板２の側面から露出している場合、基板２の裏面を金属体に接触させて駆動させると、沿面放電によって短絡する虞がある。そこで、第１電極４及び第２電極５と基板２の裏面との沿面距離は、１．５ｍｍ以上、より好ましくは２ｍｍ以上とされていることが好ましい。このようにすれば、第１電極４及び第２電極５と金属体との距離が１．５ｍｍ以上、より好ましくは２ｍｍ以上離れるため、短絡が回避される。なお、沿面距離は、基板２の厚みを厚くすることで長くしてもよいし、基板２の側面を凹状とすることで長くしてもよい。 In addition, about the 1st electrode 4 and the 2nd electrode 5, when these are exposed from the side surface of the board | substrate 2 through the inside of the board | substrate 2, when the back surface of the board | substrate 2 is made to contact a metal body and it drives, There is a risk of short circuit due to discharge. Therefore, the creepage distance between the first electrode 4 and the second electrode 5 and the back surface of the substrate 2 is preferably 1.5 mm or more, more preferably 2 mm or more. In this way, since the distance between the first electrode 4 and the second electrode 5 and the metal body is 1.5 mm or more, more preferably 2 mm or more, a short circuit is avoided. The creepage distance may be increased by increasing the thickness of the substrate 2 or may be increased by making the side surface of the substrate 2 concave.
導電部材８は、第１電極４の第１領域４ａと第２電極５の第２領域５ａとの間に生じる基板２の上面が露出した領域を可能な限り少なくする形状にすることが好ましい。このようにすれば、導電部材８の面積が広がるため、より多くの面積を導電部材８、あるいは導電部材８とこれに付着する光反射膜９で覆うことができる。また、導電部材８の方が基板２よりも熱伝導率が高い場合は、導電部材８の面積が広がるため、放熱性が向上する。 It is preferable that the conductive member 8 has a shape that minimizes the region where the upper surface of the substrate 2 exposed between the first region 4a of the first electrode 4 and the second region 5a of the second electrode 5 is exposed. In this way, since the area of the conductive member 8 increases, a larger area can be covered with the conductive member 8 or the conductive member 8 and the light reflecting film 9 attached thereto. In addition, when the conductive member 8 has a higher thermal conductivity than the substrate 2, the area of the conductive member 8 is increased, so that heat dissipation is improved.
［光反射膜］
図３は、本発明の実施形態に係る発光装置の模式的断面図であり、図３（ａ）〜（ｃ）は、いずれも、図２におけるＡ-Ａ断面の一例である。
[Light reflecting film]
FIG. 3 is a schematic cross-sectional view of the light emitting device according to the embodiment of the present invention, and FIGS. 3A to 3C are all examples of the AA cross section in FIG.
図３に示すように、光反射膜９は、導電部材８に付着する。また、本発明の実施形態に係る発光装置では、導電部材８に加えて、第１電極４と第２電極５とにも光反射膜９が付着する。光反射膜９には、金属や絶縁部材などを用いることができる。 As shown in FIG. 3, the light reflecting film 9 adheres to the conductive member 8. Further, in the light emitting device according to the embodiment of the present invention, the light reflecting film 9 is attached to the first electrode 4 and the second electrode 5 in addition to the conductive member 8. A metal, an insulating member, or the like can be used for the light reflecting film 9.
（金属）
光反射膜９として用いる金属には、少なくとも基板２の反射率よりも高い反射率であれば好ましく、例えば、Ａｇ、Ｒｈ、Ａｕ、Ａｌなどを用いることができる。
(metal)
The metal used as the light reflecting film 9 is preferably at least a reflectance higher than the reflectance of the substrate 2, and for example, Ag, Rh, Au, Al, or the like can be used.
（絶縁部材）
光反射膜９として用いる絶縁部材には、白色のフィラー（例：絶縁性の無機化合物からなる白色フィラー）を好ましく用いることができる。ただし、ここでの白色には、フィラー自体が透明であった場合でも、フィラーの周りの材料と屈折率差がある場合に散乱で白色に見えるものも含まれる。
(Insulating material)
As the insulating member used as the light reflecting film 9, a white filler (eg, a white filler made of an insulating inorganic compound) can be preferably used. However, the white color here includes those that appear white due to scattering when there is a difference in refractive index from the material around the filler even when the filler itself is transparent.
白色フィラーの一例としては、例えば、ＳｉＯ２、Ａｌ２Ｏ３、ＴｉＯ２、ＺｒＯ２、ＺｎＯ２、Ｎｂ２Ｏ５、ＭｇＯ、ＳｒＯ、Ｉｎ２Ｏ３、ＴａＯ２、ＨｆＯ、ＳｅＯ、Ｙ２Ｏ３などの酸化物や、ＳｉＮ、ＡｌＮ、ＡｌＯＮなどの窒化物、ＭｇＦ２などのフッ化物を挙げることができる。これらは、単独で用いても良いし、または、混合して用いてもよい。あるいは、積層させてもよい。 As an example of a white filler, for example, SiO 2, Al 2 O 3 , TiO 2, ZrO 2, ZnO 2, Nb 2 O 5, MgO, SrO, In 2 O 3, TaO 2, HfO, SeO, Y 2 O 3 and the like, nitrides such as SiN, AlN, and AlON, and fluorides such as MgF 2 . These may be used alone or in combination. Alternatively, they may be laminated.
フィラーの粒径は、１ｎｍ〜１０μｍ程度のものを用いることが好ましく、１００ｎｍ〜５μｍ程度のものを用いることがより好ましい。このようにすれば、光を良好に散乱させることができる。 The filler particle size is preferably about 1 nm to 10 μm, more preferably about 100 nm to 5 μm. In this way, light can be scattered favorably.
フィラーの形状は、例えば、球形や鱗片形状などにすることができる。 The shape of the filler can be, for example, a spherical shape or a scale shape.
（付着方法）
図３（ａ）に示すように、光反射膜９に金属を用いる場合には、めっきにより、これを第１電極４、第２電極５、及び導電部材８に付着させることができる。この場合は、保護素子７を実装する前に光反射膜９を付着させるため、光反射膜９が保護素子７及び接続部材６に付着しない。
(Adhesion method)
As shown in FIG. 3A, when a metal is used for the light reflecting film 9, it can be attached to the first electrode 4, the second electrode 5, and the conductive member 8 by plating. In this case, since the light reflection film 9 is attached before the protection element 7 is mounted, the light reflection film 9 does not adhere to the protection element 7 and the connection member 6.
図３（ｂ）に示すように、光反射膜９に絶縁部材を用いる場合には、電着塗装により、これを第１電極４、第２電極５、及び導電部材８に付着させることができる。この場合は、保護素子７を実装した後に光反射膜９を付着させるため、光反射膜９が保護素子７及び接続部材６に付着する（保護素子７及び接続部材６が第１電極４及び第２電極５に導通しているため。）。 As shown in FIG. 3B, when an insulating member is used for the light reflecting film 9, it can be attached to the first electrode 4, the second electrode 5, and the conductive member 8 by electrodeposition coating. . In this case, since the light reflection film 9 is attached after the protection element 7 is mounted, the light reflection film 9 is attached to the protection element 7 and the connection member 6 (the protection element 7 and the connection member 6 are the first electrode 4 and the first electrode 4). Because it is electrically connected to the two electrodes 5.)
図３（ｃ）に示すように、光反射膜９に白色フィラー（絶縁部材の一例）を用いる場合には、電着塗装により、これを第１電極４、第２電極５、及び導電部材８に付着させることができる。この場合は、白色フィラーの厚みを増していくと、導電部材８の上面や側面についた白色フィラーの厚みが増していき、やがて、導電部材８間のギャップが白色フィラーで埋まる。このようにすると、基板２の上面が露出した領域も光反射膜９で覆うことができるため、より好ましい。なお、後述のリフレクタ１０を設ける場合は、リフレクタ１０で被覆される部分についてはこの限りではない。 As shown in FIG. 3C, when a white filler (an example of an insulating member) is used for the light reflecting film 9, the first electrode 4, the second electrode 5, and the conductive member 8 are formed by electrodeposition coating. Can be attached to. In this case, as the thickness of the white filler is increased, the thickness of the white filler on the upper surface and side surfaces of the conductive member 8 is increased, and the gap between the conductive members 8 is eventually filled with the white filler. This is more preferable because the region where the upper surface of the substrate 2 is exposed can be covered with the light reflecting film 9. In addition, when providing the below-mentioned reflector 10, the part covered with the reflector 10 is not this limitation.
［リフレクタ、透光性部材］
図１、２、３に示すように、本発明の実施形態に係る発光装置１は、さらに、複数の発光素子３の光を反射させるリフレクタ１０と、複数の発光素子３を封止する透光性部材１１と、を備えている。
[Reflector, translucent member]
As shown in FIGS. 1, 2, and 3, the light emitting device 1 according to the embodiment of the present invention further includes a reflector 10 that reflects the light of the plurality of light emitting elements 3 and a light transmitting device that seals the plurality of light emitting elements 3. And a sex member 11.
（リフレクタ）
リフレクタ１０には、例えば、ＴｉＯ２、Ａｌ２Ｏ３、ＺｒＯ２、ＭｇＯなどの反射部材を含有したフェノール樹脂、エポキシ樹脂、ＢＴ樹脂、ＰＰＡ樹脂、またはシリコーン樹脂などの光反射性樹脂を用いることができる。
(Reflector)
For the reflector 10, for example, a light reflecting resin such as a phenol resin, an epoxy resin, a BT resin, a PPA resin, or a silicone resin containing a reflecting member such as TiO 2 , Al 2 O 3 , ZrO 2 , or MgO is used. Can do.
リフレクタ１０は、複数の発光素子３を囲むように設けることにより、透光性部材１１を充填するための枠としても用いることができる。 The reflector 10 can also be used as a frame for filling the translucent member 11 by providing the reflector 10 so as to surround the plurality of light emitting elements 3.
（透光性部材）
透光性部材１１には、シリコーン樹脂、エポキシ樹脂、またはユリア樹脂などを用いることができる。これらの樹脂には、蛍光体、着色剤、光拡散剤などを含有させてもよい。
(Translucent member)
For the translucent member 11, silicone resin, epoxy resin, urea resin, or the like can be used. These resins may contain a phosphor, a colorant, a light diffusing agent, and the like.
以上、本発明の実施形態について説明したが、これらの説明は、本発明の一例に関するものであり、本発明は、これらの説明によって何ら限定されるものではない。 As mentioned above, although embodiment of this invention was described, these description is related with an example of this invention, and this invention is not limited at all by these description.
１ 発光装置
２ 基板
３ 発光素子
４ 第１電極
４ａ 第１領域
５ 第２電極
５ａ 第２領域
６ 接続部材
７ 保護素子
８ 導電部材
９ 光反射膜
１０ リフレクタ
１１ 透光性部材
DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Board | substrate 3 Light-emitting element 4 1st electrode 4a 1st area | region 5 2nd electrode 5a 2nd area | region 6 Connection member 7 Protection element 8 Conductive member 9 Light reflecting film 10 Reflector 11 Translucent member
Claims (13)
前記複数の発光素子はフリップチップ実装されており、
前記第１電極と前記第２電極とから絶縁された光反射膜が付着する導電部材を前記基板上における少なくとも前記第１領域と前記第２領域との間に備え、
前記複数の発光素子と前記導電部材は平面視において離間していることを特徴とする発光装置。 A substrate, a plurality of light emitting elements mounted on the substrate, a first electrode and a second electrode provided on the substrate and electrically connected to the plurality of light emitting elements, and a first electrode of the first electrode A protective element having positive and negative electrodes connected to one region and the second region of the second electrode via a connecting member,
The plurality of light emitting elements are flip-chip mounted,
A conductive member to which a light reflecting film insulated from the first electrode and the second electrode adheres is provided at least between the first region and the second region on the substrate ,
The light emitting device, wherein the plurality of light emitting elements and the conductive member are separated from each other in plan view .
前記直列回路の一端に位置する発光素子は前記第１電極に電気的に接続され、前記直列回路の他端に位置する発光素子は前記第２電極に電気的に接続されており、The light emitting element located at one end of the series circuit is electrically connected to the first electrode, and the light emitting element located at the other end of the series circuit is electrically connected to the second electrode,
平面視において、前記第１領域と前記第２領域との直線距離は、前記直列回路の一端に位置する発光素子と前記直列回路の他端に位置する発光素子との、前記第１領域と前記第２領域とを通る直線に平行な方向における距離よりも短いことを特徴とする請求項１に記載の発光装置。In a plan view, the linear distance between the first region and the second region is the light emitting element located at one end of the series circuit and the light emitting element located at the other end of the series circuit, The light emitting device according to claim 1, wherein the light emitting device is shorter than a distance in a direction parallel to a straight line passing through the second region.
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