JP6036055B2 - 蛍光体及びこれを用いた発光装置 - Google Patents
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- JP6036055B2 JP6036055B2 JP2012200027A JP2012200027A JP6036055B2 JP 6036055 B2 JP6036055 B2 JP 6036055B2 JP 2012200027 A JP2012200027 A JP 2012200027A JP 2012200027 A JP2012200027 A JP 2012200027A JP 6036055 B2 JP6036055 B2 JP 6036055B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 93
- 238000002441 X-ray diffraction Methods 0.000 claims description 22
- 230000005284 excitation Effects 0.000 claims description 9
- 239000011575 calcium Substances 0.000 description 31
- 235000019557 luminance Nutrition 0.000 description 24
- 239000000203 mixture Substances 0.000 description 23
- 239000002994 raw material Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 19
- 229910052791 calcium Inorganic materials 0.000 description 18
- 229910052712 strontium Inorganic materials 0.000 description 18
- 229910052788 barium Inorganic materials 0.000 description 16
- 238000006467 substitution reaction Methods 0.000 description 16
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 11
- 150000001342 alkaline earth metals Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000000295 emission spectrum Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- -1 oxides Chemical class 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052693 Europium Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012190 activator Substances 0.000 description 4
- 150000004645 aluminates Chemical class 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910004122 SrSi Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 238000000695 excitation spectrum Methods 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- XCNGEWCFFFJZJT-UHFFFAOYSA-N calcium;azanidylidenecalcium Chemical compound [Ca+2].[Ca]=[N-].[Ca]=[N-] XCNGEWCFFFJZJT-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical group [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
また、この蛍光体は、400nmの光源により励起されたとき、440〜470nmに発光ピーク波長を有する性質を有する。
X線管球:CuKα
管電圧:30kV
管電流:15mA
スキャン方法:2θ/θ
スキャン速度:4°/min
サンプリング間隔:0.02°
また、元素比の変更、他元素による固溶、さらに、X線が照射される試料面が平坦でなかったときや、XRD装置の測定条件の違いにより回折ピークの位置のズレが生じることもある。そのため、回折ピークの2θの範囲が若干ずれることは許容されるものとする。
以下に、本実施の形態に係る蛍光体の製造方法について説明する。この蛍光体は、その組成に含有される元素の単体や酸化物、炭酸塩あるいは窒化物などを原料とし、各原料を所定の仕込み組成比となるように秤量する。「仕込み組成比」とは、各原料の混合物において、蛍光体の構成元素を含む原料における各元素のモル比が示されている。
発光素子101は、紫外線領域から可視光領域までの光を発することができる。この発光素子101は、例えば、窒化物半導体素子(InXAlYGa1−X−YN、0≦X、0≦Y、X+Y≦1)を用いることができる。
本実施の形態に係る蛍光体102は、封止部材103の下方へ自重により沈降するよう配合されている。このように発光素子101に接近して蛍光体を配置することにより、発光素子101からの光を効率よく波長変換することができ、発光効率の優れた発光装置とすることができる。また、蛍光体102を封止部材103中にほぼ均一の割合で混合することによって、色ムラのない光を得るようにすることもできる。
封止部材103は、発光装置100の凹部底面112上に配置された発光素子101を覆うように、透光性樹脂を材料として、充填されて形成される。透光性樹脂は、シリコーン樹脂組成物を使用することが好ましいが、エポキシ樹脂組成物、アクリル樹脂組成物等の絶縁樹脂組成物を使用することもできる。また、封止部材103には蛍光体102が含有されているが、さらに適宜、添加部材を含有させることもできる。例えば、光拡散材を含むことで、発光素子からの指向性を緩和させ、視野角を増大させることができる。
実施例1に係る蛍光体の仕込み組成比は、SrSi7N10:Eu0.04である。具体的には、Sr3N2、Si3N4、Eu2O3の粉末を原料とし、モル比でSr3N2:Si3N4:Eu2O3=0.32:2.33:0.02となるように各原料を秤量した。具体的には、各原料を以下に示す質量に計量した。ただし、各蛍光体原料の純度を100%と仮定している。
Sr3N2・・・・10.89g
Si3N4・・・・38.29g
Eu2O3・・・・0.82g
窒素パージされたグローブボックス中で、上記のように秤量した原料を乳鉢によって乾式で十分に混合した後、当該混合物を炉内に載置し、窒素雰囲気中、約2000℃で約5時間の焼成を行った。これにより、仕込み組成比がSrSi7N10:Eu0.04である蛍光体を得た。実施例1の蛍光体の生成における反応式の例を下記の[化1]に示す。
実施例5〜9の蛍光体は、Srに対するEu濃度が、所定の濃度になるように原料を秤量した他は、実施例1と同様の操作を行って得た。
実施例11および比較例1〜3の蛍光体は、Srの一部をCaで置換するために、Sr3N2の一部をCa3N2に置き換えて秤量および混合した他は、実施例1と同様の操作を行って得たものである。
実施例12〜14および比較例4〜5の蛍光体は、Srの一部をBaで置換するために、Sr3N2の一部をBa3N2に置き換えて秤量および混合した他は、実施例1と同様の操作を行って得た。
Claims (2)
- 一般式が、Sr1−aCaaSi7N10:Eu(ただし、0<a≦0.1)、または、Sr1−bBabSi7N10:Eu(ただし、0<b<0.5)で表され、紫外線により励起されて発光する蛍光体であって、
CuKα線によるX線回折パターンにおいて、2θが29.3°〜29.9°の範囲にある回折ピークの強度を100%としたとき、
2θが30.6°〜31.2°の範囲内にある回折ピークの相対強度は、410%〜650%であり、
2θが55.8°〜56.4°の範囲内にある回折ピークの相対強度は、90%〜160%であり、
2θが66.1°〜66.7°の範囲内にある回折ピークの相対強度は、60%〜105%である相を主とした生成相を含有することを特徴とする蛍光体。 - 少なくとも紫外線を含む光を発する励起光源と、その励起光源からの光の一部を吸収して発光する蛍光体と、を有する発光装置であって、
前記蛍光体は、請求項1に記載の蛍光体であることを特徴とする発光装置。
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