JP6001595B2 - 有機エレクトロルミネセンスデバイス - Google Patents
有機エレクトロルミネセンスデバイス Download PDFInfo
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- JP6001595B2 JP6001595B2 JP2014099504A JP2014099504A JP6001595B2 JP 6001595 B2 JP6001595 B2 JP 6001595B2 JP 2014099504 A JP2014099504 A JP 2014099504A JP 2014099504 A JP2014099504 A JP 2014099504A JP 6001595 B2 JP6001595 B2 JP 6001595B2
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- Prior art keywords
- layer
- electrode
- inorganic barrier
- barrier layer
- boron oxide
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
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- Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
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Description
本発明によるOELデバイスを実施例1で作製し、これは、第1の電極、第2の電極、および第1の電極と第2の電極との間配置された発光構造を支持するガラス(すなわち、低透湿性)基板を含んだ。酸化ホウ素の層と、無機バリヤ層とを含む保護構造も、酸化ホウ素の層がOELデバイスの動作層(すなわち、発光構造ならびに第1および第2の電極)と直接接触する状態で設けた。
保護構造カプセル化を伴うおよび伴わない、水溶液から形成された層を有するOELデバイスを実施例2で作製した。PEDOT層を、2500RPMで30秒間、パターニングされたITOガラス基板上にスピンコーティングし、後者は、実施例1で説明された通りであり、次に、コーティングされた基板を、15分間85℃で窒素雰囲気下で乾燥させた。次に、実施例1の緑色発光OLEDスタックを、実施例1で説明されたように、PEDOTコーティングガラス基板の上に蒸着した。
保護構造カプセル化を伴うおよび伴わないOELデバイスを実施例3で作製し、これらのデバイスを、水溶液からキャストされた層なしで製造した。平面化HIL(MTDATA:FTCNQ(2.8%のドーピング、3000Å))を、パターニングされたITOガラス基板の上に蒸着し、基板は、実施例1で説明された通りであった。次に、実施例1で説明された堆積手順を用いて、実施例1の緑色発光OLEDスタックをHILの上に堆積させた。
高反応性カルシウム金属層に対する湿気の透過を低減する際のB2O3層の上の蒸着無機バリヤ層の有効性を評価するために、実施例4を準備した。窒素雰囲気グローブボックス内で、6の酸素プラズマ洗浄された(フルパワーおよび5psiの酸素で5分、プラズマ−プリーン(Plasma−Preen)II−973、ニュージャージー州ノースブランズウィックのプラズマティック・システムズ・インコーポレイテッド(Plasmatic Systems, Inc., North Brunswick, New Jersey))22mmのカバーガラス(glass cover slip)基板を、中心に10mm×10mm正方形開口部を含む金属シャドーマスクの上に配置した。これらをグローブボックスの内側に配置された薄膜蒸着チャンバ内に装填し、チャンバを7×10-7トルに排気した。カルシウムを、2000Åが堆積されてしまうまで、BNるつぼから約2Å/秒で熱的蒸発した。
B2O3層の、OELデバイスの発光能力への影響を評価するために、本発明によるOELデバイスを実施例5で作製した。9の22mm正方形(厚さ1mm)ITOコーティングガラス基板(15オーム/平方、コロラド州ロングモントのコロラド・コンセプト・コーティングスLLC(Colorado Concept Coatings LLC, Longmont, Colorado))を、メタノール浸漬リントフリークロス(ベクトラ・アルファ(Vectra Alpha)10、ニュージャージー州アッパーサドルリバーのテックスワイプ・カンパニー・LLC(Texwipe Co., LLC, Upper Saddle River, New Jersey))でこすり、次いで、50ワットおよび200mトルの酸素における4分の酸素プラズマ処理(マイクロ−RIEシリーズ(Micro−RIE Series)80、カリフォルニア州ダブリンのテクニクス・インコーポレイテッド(Technics, Inc., Dublin, California))によって、洗浄した。PEDOTを、2500RPMで30秒間、洗浄された基板上にスピンコーティングし、基板を、110℃のホットプレート上で20分間窒素雰囲気下で乾燥させた。基板をベルジャータイプOLED堆積チャンバ内に配置し、システムを5×10-6トルに排気した。NPD(300Å、1Å/秒)、2%のC545TでドープされたAlQ(300Å、1Å/秒)、およびAlQ(200Å、1Å/秒)を、20mm正方形シャドーマスクを介して、示された順に順次蒸着し、サンプルを、カソードの熱堆積のため、薄膜蒸着チャンバ(エドワーズ(Edwards)500、英国のBOCエドワーズ(BOC Edwards, England))を収容するグローブボックスに移送した。
保護されたポリマーフィルムを組入れる、本発明によるOLEDデバイスを、実施例6で作製した。MEK1000グラムに溶解した、80グラムのエベクリル629、20グラムのSR399、および2グラムのイルガキュア184を組合せることによって、UV硬化性溶液を作製した。結果として生じる溶液を、20フィート/分で動作するCAG 150マイクログラビアコータを使用して、幅6.5インチのHSPE 100 PETフィルム基板のロール上にコーティングした。その後、コーティングを、70℃でインライン乾燥させ、次に、100%のパワーで動作するフュージョンD UVランプで、窒素雰囲気下で硬化させた。これは、上に厚さ約0.7μmの透明なコーティングを有する透明なPETフィルム基板をもたらした。
保護されたポリマーフィルムを組入れる、本発明によるOLEDデバイスを、実施例2で作製した。実施例6からのOLEDデバイスAの付加的なサンプルを作製し、銅箔を、エポキシ(ミシガン州イーストランシングのハンツマンLLC、アドバンスド・マテリアルズ・ディビィジョン、バンティコ(Huntsman LLC, Advanced Materials Division, Vantico, East Lansing, MI)から入手可能なアラルダイト(Araldite)2014)の薄いビードを使用して端縁シールした。エポキシを、12時間にわたってN2雰囲気中で室温で硬く硬化させた。便宜上、これを「OLEDデバイスB」と呼ぶ。
Claims (2)
- a)第1の電極、第2の電極、および前記第1の電極と前記第2の電極との間に配置された発光構造を支持する低透湿性基板と、
b)前記基板と協働して、前記第1の電極、前記第2の電極、および前記発光構造をカプセル化する保護構造であって、
前記保護構造が酸化ホウ素の層および無機バリヤ層を含み、前記低透湿性基板が酸化ホウ素の層と無機バリヤ層とを含む保護されたポリマーフィルムである、有機エレクトロルミネセンスデバイス。 - 前記デバイスが、前記保護構造と、前記第1の電極、前記第2の電極、および前記発光構造との間に配置されたバッファ層をさらに含み、
前記バッファ層が、前記第1の電極、前記第2の電極、および前記発光構造の上に配置され、前記酸化ホウ素の層が前記バッファ層の上に配置され、前記無機バリヤ層が前記酸化ホウ素の層の上に配置され、そして
前記バッファ層が、有機金属化合物またはキレート化合物を含む、請求項1に記載の有機エレクトロルミネセンスデバイス。
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US10/948,011 | 2004-09-23 | ||
US10/948,011 US7342356B2 (en) | 2004-09-23 | 2004-09-23 | Organic electroluminescent device having protective structure with boron oxide layer and inorganic barrier layer |
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CN (1) | CN101124852A (ja) |
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BR (1) | BRPI0515579A (ja) |
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WO2006036492A1 (en) | 2006-04-06 |
US20060061272A1 (en) | 2006-03-23 |
TWI374562B (en) | 2012-10-11 |
EP1803330B1 (en) | 2011-11-16 |
JP2014170755A (ja) | 2014-09-18 |
KR101281259B1 (ko) | 2013-07-03 |
US20080107798A1 (en) | 2008-05-08 |
EP1803330A1 (en) | 2007-07-04 |
CN101124852A (zh) | 2008-02-13 |
ATE534267T1 (de) | 2011-12-15 |
BRPI0515579A (pt) | 2008-07-29 |
TW200620732A (en) | 2006-06-16 |
JP2008515148A (ja) | 2008-05-08 |
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