JP5990933B2 - 圧力センサパッケージの製造方法 - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
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- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
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- G—PHYSICS
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- H01L2924/151—Die mounting substrate
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
10 圧力センサ
11 ダイアフラム
12 キャビティ
13 半導体センサ基板
15 ワイヤ
20 パッケージ本体
20a 上面
21 内部空間
28 金属配線パターン
30 リッド(蓋体)
31 キャップ部
32 鍔部
33 接着剤
34 隙間
35 高さ調整部材
35a バンプ
35b ビーズ
Claims (5)
- 内部に圧力センサを実装した凹部形状のパッケージ本体と、前記圧力センサのダイアフラムの上方に内部空間を確保した状態で前記パッケージ本体を覆う光遮蔽部材からなる蓋体とを備え、前記パッケージ本体と蓋体とは、複数箇所で部分接着されており、前記パッケージ本体と蓋体との間における前記部分接着以外の部分には、前記パッケージ本体の外部と前記内部空間とを横方向に連通する隙間が前記パッケージ本体と蓋体との間に形成されている圧力センサパッケージの製造方法であって、
金属板に複数個の蓋体を、各蓋体の断面形状がハット状となるように、かつ部分接着する部分にバンプを含むように電鋳メッキにて形成した後、個片化することを特徴とする圧力センサパッケージの製造方法。 - 前記パッケージ本体は、セラミック材料からなっていることを特徴とする請求項1記載の圧力センサパッケージの製造方法。
- 前記パッケージ本体における前記蓋体との接着面には、接地用の金属配線パターンが配されていることを特徴とする請求項1又は2記載の圧力センサパッケージの製造方法。
- 前記部分接着には、シリコーン系樹脂を含む接着剤が使用されていることを特徴とする請求項1〜3のいずれか1項に記載の圧力センサパッケージの製造方法。
- 内部に圧力センサを実装した凹部形状のパッケージ本体と、前記圧力センサのダイアフラムの上方に内部空間を確保した状態で前記パッケージ本体を覆う光遮蔽部材からなる蓋体とを備え、前記パッケージ本体と蓋体とは、複数箇所で部分接着されており、前記パッケージ本体と蓋体との間における前記部分接着以外の部分には、前記パッケージ本体の外部と前記内部空間とを連通する隙間が形成されている圧力センサパッケージを製造するための圧力センサパッケージの製造方法であって、
金属板に複数個の蓋体を、各蓋体の断面形状がハット状となるように、かつ部分接着する部分にバンプを含むように電鋳メッキにて形成した後、個片化することを特徴とする圧力センサパッケージの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012044521A JP5990933B2 (ja) | 2012-02-29 | 2012-02-29 | 圧力センサパッケージの製造方法 |
PCT/JP2013/054019 WO2013129186A1 (ja) | 2012-02-29 | 2013-02-19 | 圧力センサパッケージ及びその製造方法 |
DE112013001218.9T DE112013001218B4 (de) | 2012-02-29 | 2013-02-19 | Drucksensorgehäuse und Verfahren zu seiner Herstellung |
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Application Number | Priority Date | Filing Date | Title |
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JP2012044521A JP5990933B2 (ja) | 2012-02-29 | 2012-02-29 | 圧力センサパッケージの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013181788A JP2013181788A (ja) | 2013-09-12 |
JP5990933B2 true JP5990933B2 (ja) | 2016-09-14 |
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JP2012044521A Active JP5990933B2 (ja) | 2012-02-29 | 2012-02-29 | 圧力センサパッケージの製造方法 |
Country Status (3)
Country | Link |
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JP (1) | JP5990933B2 (ja) |
DE (1) | DE112013001218B4 (ja) |
WO (1) | WO2013129186A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014085289A (ja) * | 2012-10-26 | 2014-05-12 | Murata Mfg Co Ltd | 半導体圧力センサ |
US9705069B2 (en) | 2013-10-31 | 2017-07-11 | Seiko Epson Corporation | Sensor device, force detecting device, robot, electronic component conveying apparatus, electronic component inspecting apparatus, and component machining apparatus |
JP5972850B2 (ja) | 2013-11-15 | 2016-08-17 | 長野計器株式会社 | 物理量測定センサ |
JP6273189B2 (ja) * | 2014-10-29 | 2018-01-31 | アルプス電気株式会社 | センサパッケージ |
US10641672B2 (en) | 2015-09-24 | 2020-05-05 | Silicon Microstructures, Inc. | Manufacturing catheter sensors |
US10682498B2 (en) | 2015-09-24 | 2020-06-16 | Silicon Microstructures, Inc. | Light shields for catheter sensors |
WO2017196781A1 (en) * | 2016-05-09 | 2017-11-16 | Materion Corporation | Air cavity package |
JP6803979B2 (ja) * | 2016-10-17 | 2020-12-23 | シリコン マイクロストラクチャーズ, インコーポレイテッドSilicon Microstructures, Inc. | 圧力センサシステム |
JP7029297B2 (ja) * | 2018-01-16 | 2022-03-03 | ローム株式会社 | 電子素子モジュール |
JP7298225B2 (ja) | 2019-03-20 | 2023-06-27 | セイコーエプソン株式会社 | Memsデバイス、及び電子機器 |
CN114402431A (zh) * | 2019-09-12 | 2022-04-26 | 株式会社村田制作所 | 半导体装置及其制造方法 |
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JP2000105161A (ja) * | 1998-09-29 | 2000-04-11 | Nippon Seiki Co Ltd | 圧力検出器 |
JP2004219402A (ja) * | 2002-12-24 | 2004-08-05 | Denso Corp | 圧力センサ装置およびその製造方法 |
WO2007023168A1 (de) | 2005-08-23 | 2007-03-01 | Continental Teves Ag & Co. Ohg | Drucksensor für hydraulische medien in kraftfahrzeugbremssystemen und dessen verwendung |
JP2007258670A (ja) * | 2006-02-24 | 2007-10-04 | Yamaha Corp | 半導体装置 |
EP1795496A2 (en) | 2005-12-08 | 2007-06-13 | Yamaha Corporation | Semiconductor device for detecting pressure variations |
JP2008026080A (ja) * | 2006-07-19 | 2008-02-07 | Matsushita Electric Works Ltd | 圧力センサ |
JP5248317B2 (ja) | 2006-11-29 | 2013-07-31 | 株式会社フジクラ | 圧力センサモジュール |
JP2010281569A (ja) * | 2007-09-25 | 2010-12-16 | Alps Electric Co Ltd | 圧力センサ用パッケージ |
JP2010096505A (ja) | 2008-10-14 | 2010-04-30 | Nippon Ceramic Co Ltd | 微気圧センサおよび微気圧センサ製造方法 |
JP2010199148A (ja) * | 2009-02-23 | 2010-09-09 | Fujikura Ltd | 半導体センサデバイス及びその製造方法、パッケージ及びその製造方法、モジュール及びその製造方法、並びに電子機器 |
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