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JP5975789B2 - Power semiconductor module - Google Patents

Power semiconductor module Download PDF

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Publication number
JP5975789B2
JP5975789B2 JP2012181301A JP2012181301A JP5975789B2 JP 5975789 B2 JP5975789 B2 JP 5975789B2 JP 2012181301 A JP2012181301 A JP 2012181301A JP 2012181301 A JP2012181301 A JP 2012181301A JP 5975789 B2 JP5975789 B2 JP 5975789B2
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Japan
Prior art keywords
power semiconductor
conductor plate
semiconductor module
wiring board
wiring
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Application number
JP2012181301A
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Japanese (ja)
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JP2014038973A (en
Inventor
彬 三間
彬 三間
中津　欣也
欣也 中津
健 徳山
健 徳山
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Priority to JP2012181301A priority Critical patent/JP5975789B2/en
Priority to PCT/JP2013/069085 priority patent/WO2014030458A1/en
Publication of JP2014038973A publication Critical patent/JP2014038973A/en
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Publication of JP5975789B2 publication Critical patent/JP5975789B2/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)

Description

本発明は直流電力を交流電力に変換しあるいは交流電力を直流電力に変換するために使用するパワー半導体モジュールに関する。   The present invention relates to a power semiconductor module used for converting DC power into AC power or converting AC power into DC power.

近年、電力変換装置の高出力・高密度化が求められ、パワー半導体モジュールの小型化が注目されている。小型化のためには、ドライブ回路などの制御回路をパワー半導体モジュールと一体化し、内蔵集積化のキー技術が必須となっている。   In recent years, high power and high density of power conversion devices have been demanded, and miniaturization of power semiconductor modules has attracted attention. For miniaturization, a key circuit technology that integrates a control circuit such as a drive circuit with a power semiconductor module and integrates it is essential.

パワー半導体モジュールでは、一般的に電力スイッチング用素子としてＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）や電流還流用のダイオードが実装されており、そのＩＧＢＴを駆動するためのドライブＩＣなどの制御素子をモジュール化したインテリジェント型パワー半導体モジュールが知られている。   In power semiconductor modules, IGBTs (Insulated Gate Bipolar Transistors) and current return diodes are generally mounted as power switching elements, and intelligent control modules such as drive ICs for driving the IGBTs are modularized. Type power semiconductor modules are known.

たとえば、特許文献１では、リード端子が外部へ引き出された状態で、パワー半導体を搭載したパワー回路基板が絶縁樹脂で封止されてなるパワー回路モジュールと、パワー半導体を駆動・制御する制御回路基板が絶縁樹脂で封埋された制御回路モジュールを備え、パワー回路モジュールのリード端子が制御回路モジュールの接続部に接続された状態で機械的に一体化され、パワー回路モジュールと制御回路モジュールとをワイヤで接続した電力変化装置が記載されている。   For example, in Patent Document 1, a power circuit module in which a power circuit board on which a power semiconductor is mounted is sealed with an insulating resin in a state where lead terminals are drawn to the outside, and a control circuit board that drives and controls the power semiconductor. Includes a control circuit module embedded with an insulating resin, mechanically integrated with the lead terminals of the power circuit module connected to the connection portion of the control circuit module, and the power circuit module and the control circuit module are wired. The power change device connected at is described.

一方で、ドライブ回路をパワー半導体モジュール内に搭載する際に、更なる組立性の向上が求められる。   On the other hand, when the drive circuit is mounted in the power semiconductor module, further improvement in assemblability is required.

また、ドライブ回路を構成する回路部品は、パワー半導体モジュール内のパワー素子よりも熱的条件が厳しい場合がある。   In addition, the circuit components constituting the drive circuit may have severer thermal conditions than the power elements in the power semiconductor module.

特開２００６−１２１８６１号公報JP 2006-121861 A 特開２０１１−２３６５４号公報JP 2011-23654 A 特開２００８−１６８２２号公報JP 2008-16822 A

そこで本発明の課題は、実装プロセスを容易にすること及び、パワー半導体モジュールの信頼性を向上することである。   Accordingly, an object of the present invention is to facilitate the mounting process and improve the reliability of the power semiconductor module.

本発明に係るパワー半導体モジュールは、直流電流を交流電流に変換するインバータ回路を構成するパワー半導体素子と、前記パワー半導体素子と対向する第１導体板と、前記パワー半導体素子を挟んで前記第１導体板と対向する第２導体板と、前記パワー半導体素子を駆動する駆動用素子と、前記駆動用素子を搭載する配線基板と、前記パワー半導体素子と前記第１導体板と前記第２導体板と前記駆動用素子と前記配線基板を封止する封止材と、を備え、前記第１導体板において当該第１導体板と前記パワー半導体素子との対向面の垂直方向から投影した場合に、前記配線基板は、当該配線基板の射影部の一部が前記第１導体板の射影部と重なるように配置されるとともに前記第１導体板に接合され、前記駆動用素子は、当該駆動用素子の射影部が前記第１導体板及び前記第２導体板の射影部と重ならないように配置される。   The power semiconductor module according to the present invention includes a power semiconductor element that constitutes an inverter circuit that converts a direct current into an alternating current, a first conductor plate that faces the power semiconductor element, and the first power semiconductor element sandwiched between the first and second power semiconductor elements. A second conductor plate facing the conductor plate; a driving element for driving the power semiconductor element; a wiring board on which the driving element is mounted; the power semiconductor element, the first conductor plate, and the second conductor plate. And a sealing material for sealing the driving element and the wiring board, and projecting from the vertical direction of the facing surface of the first conductor plate and the power semiconductor element in the first conductor plate, The wiring board is disposed so that a part of the projected portion of the wiring board overlaps with the projected portion of the first conductor plate, and is joined to the first conductor plate, and the driving element includes the driving element. of Shadow is positioned so as not to overlap with the first conductive plate and the projection portion of the second conductive plate.

本発明により、実装プロセスを容易にするとともに、パワー半導体モジュールの信頼性を向上することができる。   According to the present invention, the mounting process can be facilitated and the reliability of the power semiconductor module can be improved.

図１（ａ）はモールド樹脂材４を取り除いたパワー半導体モジュール１の上面図であり、図１（ｂ）は図１（ａ）の断面ＡＡの矢印方向から見た断面図であり、図１（ｃ）は図１（ａ）の断面ＢＢの矢印方向から見た断面図である。1A is a top view of the power semiconductor module 1 from which the mold resin material 4 is removed, and FIG. 1B is a cross-sectional view as viewed from the direction of the arrow of the cross-section AA in FIG. (C) is sectional drawing seen from the arrow direction of the cross section BB of Fig.1 (a). 図１の実施形態の変形例としてのパワー半導体モジュール１の概観図である。FIG. 3 is an overview diagram of a power semiconductor module 1 as a modification of the embodiment of FIG. 1. 図１の実施形態の変形例としてのパワー半導体モジュール１の概観図である。FIG. 3 is an overview diagram of a power semiconductor module 1 as a modification of the embodiment of FIG. 1. 図４の上側の構造図はモールド樹脂材４を取り除いたパワー半導体モジュール１であり、図４の下側の構造図はモールド樹脂材４の注入が終了した直後の断面図である。4 is the power semiconductor module 1 from which the mold resin material 4 is removed, and the lower structure diagram of FIG. 4 is a cross-sectional view immediately after the injection of the mold resin material 4 is completed. 図４の実施形態の変形例としてのパワー半導体モジュール１の概観図である。FIG. 6 is an overview of a power semiconductor module 1 as a modification of the embodiment of FIG. 4. 図１(a)のＢＢ断面の方向から見た、本実施形態の配線構造を示すパワー半導体モジュール１の断面図である。It is sectional drawing of the power semiconductor module 1 which shows the wiring structure of this embodiment seen from the direction of BB cross section of Fig.1 (a). 図１のパワー半導体モジュール１の回路構成図である。It is a circuit block diagram of the power semiconductor module 1 of FIG. 図８（ａ）はモールド樹脂材４を取り除いたパワー半導体モジュール１の上面図であり、図８（ｂ）は図８（ａ）に示されるパワー半導体モジュール１の回路構成図である。FIG. 8A is a top view of the power semiconductor module 1 with the mold resin material 4 removed, and FIG. 8B is a circuit configuration diagram of the power semiconductor module 1 shown in FIG. 図９（ａ）は本実施例に係るパワー半導体モジュール１の外観斜視図であり、図９（ｂ）は図９（ａ）のＡＡ断面の矢印方向から見た断面図である。FIG. 9A is an external perspective view of the power semiconductor module 1 according to the present embodiment, and FIG. 9B is a cross-sectional view as seen from the arrow direction of the AA cross section of FIG. 9A. 本実施形態に係るインバータシステムの構成の概略図である。It is the schematic of the structure of the inverter system which concerns on this embodiment. 従来のパワー半導体モジュール５１を３つ用いた場合のインバータシステムの構造例を示す。The structural example of the inverter system at the time of using three conventional power semiconductor modules 51 is shown. 本実施形態に係るインバータシステムの構造の一例を示す。An example of the structure of the inverter system which concerns on this embodiment is shown. ハイブリット自動車システムの概略図である。1 is a schematic diagram of a hybrid vehicle system.

以下、図面を参照して、本発明に係る電力変換装置（又は、パワー半導体モジュール）の実施の形態について説明する。なお、各図において同一要素については同一の符号を記し、重複する説明は省略する。   Hereinafter, an embodiment of a power conversion device (or a power semiconductor module) according to the present invention will be described with reference to the drawings. In addition, in each figure, the same code | symbol is described about the same element and the overlapping description is abbreviate | omitted.

図１を参照して、本実施形態１に係るパワー半導体モジュール１の構造について説明する。図１は実施例１に係るパワー半導体モジュール１の構造概略図を示す。図１（ａ）はモールド樹脂材４を取り除いたパワー半導体モジュール１の上面図であり、図１（ｂ）は図１（ａ）の断面ＡＡの矢印方向から見た断面図であり、図１（ｃ）は図１（ａ）の断面ＢＢの矢印方向から見た断面図である。   The structure of the power semiconductor module 1 according to the first embodiment will be described with reference to FIG. FIG. 1 is a schematic structural view of a power semiconductor module 1 according to a first embodiment. 1A is a top view of the power semiconductor module 1 from which the mold resin material 4 is removed, and FIG. 1B is a cross-sectional view as viewed from the direction of the arrow of the cross-section AA in FIG. (C) is sectional drawing seen from the arrow direction of the cross section BB of Fig.1 (a).

本実施形態におけるパワー半導体モジュール１は、電力変換素子として機能するＩＧＢＴ１１ａ及びＩＧＢＴ１１ｂと、還流素子として機能するダイオード１３ａ及びダイオード１３ｂを有する。ＩＧＢＴ１１ａ及びダイオード１３ａはインバータ回路の上アーム回路を構成するパワー半導体素子であり、ＩＧＢＴ１１ｂ及びダイオード１３ｂはインバータ回路の下アーム回路を構成するパワー半導体素子である。   The power semiconductor module 1 in the present embodiment includes IGBTs 11a and IGBTs 11b that function as power conversion elements, and diodes 13a and diodes 13b that function as reflux elements. The IGBT 11a and the diode 13a are power semiconductor elements that constitute the upper arm circuit of the inverter circuit, and the IGBT 11b and the diode 13b are power semiconductor elements that constitute the lower arm circuit of the inverter circuit.

図１(ａ)及び図１(ｃ)に示されるように、ＩＧＢＴ１１ａ及びダイオード１３ａは、第１導体板１４ａと第２導体板１２ａとの間の空間に配置される。第１導体板１４ａは、ＩＧＢＴ１１ａのコレクタ電極及びダイオード１３ａのアノード電極とはんだ材を介して接続される。第２導体板１２ａは、ＩＧＢＴ１１ａのエミッタ電極及びダイオード１３ａのカソード電極とはんだ材を介して接続される。   As shown in FIGS. 1A and 1C, the IGBT 11a and the diode 13a are disposed in a space between the first conductor plate 14a and the second conductor plate 12a. The first conductor plate 14a is connected to the collector electrode of the IGBT 11a and the anode electrode of the diode 13a via a solder material. The second conductor plate 12a is connected to the emitter electrode of the IGBT 11a and the cathode electrode of the diode 13a via a solder material.

図１(ａ)及び図１(ｂ)に示されるように、ＩＧＢＴ１１ｂ及びダイオード１３ｂは、第３導体板１４ｂと第４導体板１２ｂとの間の空間に配置される。第３導体板１４ｂは、ＩＧＢＴ１１ｂのコレクタ電極及びダイオード１３ｂのアノード電極とはんだ材を介して接続される。第４導体板１２ｂは、ＩＧＢＴ１１ｂのエミッタ電極及びダイオード１３ｂのカソード電極とはんだ材を介して接続される。   As shown in FIGS. 1A and 1B, the IGBT 11b and the diode 13b are disposed in a space between the third conductor plate 14b and the fourth conductor plate 12b. The third conductor plate 14b is connected to the collector electrode of the IGBT 11b and the anode electrode of the diode 13b via a solder material. The fourth conductor plate 12b is connected to the emitter electrode of the IGBT 11b and the cathode electrode of the diode 13b via a solder material.

図１(ａ)に示されるように、第２導体板１２ａと第３導体板１４ｂは、パワー半導体モジュール１の中央部付近において、はんだ材等により接続される。   As shown in FIG. 1A, the second conductor plate 12 a and the third conductor plate 14 b are connected by a solder material or the like in the vicinity of the center portion of the power semiconductor module 1.

配線基板６は、駆動素子７ａ、駆動素子７ｂ及びプリドライバ回路１７を搭載する。駆動素子７ａは、プリドライバ回路１７のドライバ信号に基づいてＩＧＢＴ１１ａの駆動信号を出力する。駆動素子７ｂは、プリドライバ回路１７のドライバ信号に基づいてＩＧＢＴ１１ｂの駆動信号を出力する。配線基板６は、例えばプリント配線基板である。   The wiring board 6 is mounted with a driving element 7a, a driving element 7b, and a pre-driver circuit 17. The drive element 7 a outputs a drive signal for the IGBT 11 a based on the driver signal of the pre-driver circuit 17. The drive element 7 b outputs a drive signal for the IGBT 11 b based on the driver signal of the pre-driver circuit 17. The wiring board 6 is a printed wiring board, for example.

図１(ｂ)に示されるように、配線基板６の一部は、第３導体板１４ｂの一部と第４導体板１２ｂの一部との間に挟まれ、かつはんだ材等の接着材により第３導体板１４ｂ及び第４導体板１２ｂに接合される。第３導体板１４ｂの一部は、第３導体板１４ｂの本体部から配線基板６に向かって突出する突出部１４０であり、生産性向上の観点から、第３導体板１４ｂの本体部と一体に形成されていてもよい。第４導体板１２ｂの一部は、第４導体板１２ｂの本体部から配線基板６に向かって突出する突出部１２０であり、生産性向上の観点から、第４導体板１２ｂの本体部と一体に形成されていてもよい。   As shown in FIG. 1B, a part of the wiring board 6 is sandwiched between a part of the third conductor plate 14b and a part of the fourth conductor plate 12b, and an adhesive such as a solder material. Is joined to the third conductor plate 14b and the fourth conductor plate 12b. A part of the third conductor plate 14b is a protrusion 140 that protrudes from the main body portion of the third conductor plate 14b toward the wiring board 6, and is integrated with the main body portion of the third conductor plate 14b from the viewpoint of improving productivity. It may be formed. A part of the fourth conductor plate 12b is a protruding portion 120 that protrudes from the main body portion of the fourth conductor plate 12b toward the wiring board 6, and is integrated with the main body portion of the fourth conductor plate 12b from the viewpoint of improving productivity. It may be formed.

また配線基板６は、駆動素子７ａが配置された側からＩＧＢＴ１１ａに向かって配線された配線導体１５ａと、駆動素子７ｂが配置された側からＩＧＢＴ１１ｂに向かって配線された配線導体１５ｂと、を実装する。配線導体１５ａは、ＩＧＢＴ１１ａのゲート電極を構成するパッド９ａと、ボンディングワイヤ８ａを介して接続される。配線導体１５ｂは、ＩＧＢＴ１１ｂのゲート電極を構成するパッド９ｂと、ボンディングワイヤ８ｂを介して接続される。ボンディングワイヤ８ａ及びボンディングワイヤ８ｂは、配線導体として機能する。   The wiring board 6 is mounted with a wiring conductor 15a wired from the side where the driving element 7a is arranged toward the IGBT 11a, and a wiring conductor 15b wired from the side where the driving element 7b is arranged toward the IGBT 11b. To do. The wiring conductor 15a is connected to the pad 9a constituting the gate electrode of the IGBT 11a via the bonding wire 8a. The wiring conductor 15b is connected to the pad 9b constituting the gate electrode of the IGBT 11b via the bonding wire 8b. The bonding wire 8a and the bonding wire 8b function as wiring conductors.

負極側端子３０は第１導体板１４ａと接続され、正極側端子３１は第３導体板１４ｂと接続され、交流側端子３２は、第４導体板１２ｂと接続される。   The negative electrode side terminal 30 is connected to the first conductor plate 14a, the positive electrode side terminal 31 is connected to the third conductor plate 14b, and the AC side terminal 32 is connected to the fourth conductor plate 12b.

第１導体板１４ａ又は第２導体板１２ａとＩＧＢＴ１１ａとの対向面の垂直方向から投影した場合に、つまり図１（ａ）に示される側から投影した場合に、配線基板６は、この配線基板６の射影部の一部が第１導体板１４ａの射影部及び第２導体板１２ａの射影部と重なるように配置される。そして、配線基板６は、第１導体板１４ａ及び第２導体板１２ａに接合される。一方、駆動素子７ａ及び７ｂは、この駆動素子７ａ及び７ｂの射影部が第１導体板１４ａの射影部及び第２導体板１２ａの射影部と重ならないように配置される。   When projected from the vertical direction of the opposing surface of the first conductor plate 14a or the second conductor plate 12a and the IGBT 11a, that is, when projected from the side shown in FIG. 6 are arranged so that a part of the projected portion of 6 overlaps the projected portion of the first conductor plate 14a and the projected portion of the second conductor plate 12a. The wiring board 6 is bonded to the first conductor plate 14a and the second conductor plate 12a. On the other hand, the drive elements 7a and 7b are arranged such that the projected portions of the drive elements 7a and 7b do not overlap the projected portion of the first conductor plate 14a and the projected portion of the second conductor plate 12a.

このような構造により、第１導体板１４ａ、第２導体板１２ａ、第３導体板１４ｂ、第４導体板１２ｂ及びパワー半導体素子からの熱が駆動素子７ａ及び駆動素子７ｂに伝わり難くなり、駆動素子７ａ及び駆動素子７ｂは伝熱による信頼性の低下を抑制されることができる。また、配線基板６が第１導体板１４ａの一部と第２導体板１２ａの一部との間に挟まれかつ第３導体板１４ｂの一部と第４導体板１２ｂの一部との間に挟まれていることにより、配線基板６と導体板とを強固に接続することができ、信頼性を向上した実装が可能となる。   With such a structure, heat from the first conductor plate 14a, the second conductor plate 12a, the third conductor plate 14b, the fourth conductor plate 12b, and the power semiconductor element is not easily transmitted to the drive element 7a and the drive element 7b. The element 7a and the drive element 7b can be suppressed from being deteriorated in reliability due to heat transfer. Further, the wiring board 6 is sandwiched between a part of the first conductor plate 14a and a part of the second conductor plate 12a and between a part of the third conductor plate 14b and a part of the fourth conductor plate 12b. By being sandwiched between the wiring boards, the wiring board 6 and the conductor plate can be firmly connected, and mounting with improved reliability is possible.

なお図１（ａ）ないし図１（ｃ）に係る実施形態においては、配線基板６は第１導体板１４ａの一部と第２導体板１２ａの一部との間に挟まれかつ第３導体板１４ｂの一部と第４導体板１２ｂの一部との間に挟まれているが、配線基板６が第１導体板１４ａ又は第２導体板１２ａの一方のみ、第３導体板１４ｂ又は第４導体板１２ｂの一方のみと接合されていてもよい。   In the embodiment according to FIGS. 1A to 1C, the wiring board 6 is sandwiched between a part of the first conductor plate 14a and a part of the second conductor plate 12a and the third conductor. Although sandwiched between a part of the plate 14b and a part of the fourth conductor plate 12b, the wiring board 6 has only one of the first conductor plate 14a or the second conductor plate 12a, the third conductor plate 14b or the second conductor plate 12a. It may be joined to only one of the four conductor plates 12b.

また第１導体板１４ａ又は第２導体板１２ａとＩＧＢＴ１１ａとの対向面の垂直方向から投影した場合に、第２導体板１２ａ及び第４導体板１２ｂは、第２導体板１２ａの射影部及び第４導体板１２ｂの射影部がボンディングワイヤ８ａの射影部及びボンディングワイヤ８ｂの射影部と重ならないように形成される。パワー半導体素子を第１導体板１４ａ等に接合した後に、ワイヤボンディングプロセスを行うことができ、実装プロセスが簡略化することができる。   In addition, when projected from the vertical direction of the opposing surface of the first conductor plate 14a or the second conductor plate 12a and the IGBT 11a, the second conductor plate 12a and the fourth conductor plate 12b are the projected portion of the second conductor plate 12a and the second conductor plate 12a. The projected portion of the four conductor plate 12b is formed so as not to overlap the projected portion of the bonding wire 8a and the projected portion of the bonding wire 8b. After the power semiconductor element is bonded to the first conductor plate 14a or the like, a wire bonding process can be performed, and the mounting process can be simplified.

また、本実施形態におけるパワー半導体モジュール１は、第１導体板１４ａ、第２導体板１２ａ、第３導体板１４ｂ、第４導体板１２ｂ及び配線基板６をモールド樹脂材４により一体に形成する。このモールド樹脂材４によって封止されたものを封止体４ａと定義する。さらに第１導体板１４ａの一部及び第２導体板１２ａの一部は、モールド樹脂材４の一方の面から露出する。第３導体板１４ｂの一部及び第４導体板１２ｂの一部は、モールド樹脂材４の他方の面から露出する。放熱板２ａは、絶縁部材３ａを挟んで、第２導体板１２ａと第４導体板１２ｂと配線基板６と対向する位置に配置される。また放熱板２ｂは、絶縁部材３ｂを挟んで、第１導体板１４ａと第３導体板１４ｂと配線基板６と対向する位置に配置される。   In the power semiconductor module 1 according to the present embodiment, the first conductor plate 14 a, the second conductor plate 12 a, the third conductor plate 14 b, the fourth conductor plate 12 b, and the wiring substrate 6 are integrally formed of the mold resin material 4. What is sealed with the mold resin material 4 is defined as a sealing body 4a. Further, a part of the first conductor plate 14 a and a part of the second conductor plate 12 a are exposed from one surface of the mold resin material 4. A part of the third conductor plate 14 b and a part of the fourth conductor plate 12 b are exposed from the other surface of the mold resin material 4. The heat radiating plate 2a is disposed at a position facing the second conductor plate 12a, the fourth conductor plate 12b, and the wiring board 6 with the insulating member 3a interposed therebetween. The heat sink 2b is disposed at a position facing the first conductor plate 14a, the third conductor plate 14b, and the wiring board 6 with the insulating member 3b interposed therebetween.

つまり、封止体４ａと対向する放熱板２ａの面の垂直方向から投影した場合に、駆動用素子７ａ及び駆動用素子７ｂは、これらの駆動用素子の射影部が放熱板２ａの射影部及び放熱板２ｂの射影部と重なるように配置される。   That is, when projected from the vertical direction of the surface of the heat sink 2a facing the sealing body 4a, the drive element 7a and the drive element 7b are such that the projecting portions of these drive elements are the projecting portions of the heat sink 2a and It arrange | positions so that it may overlap with the projection part of the heat sink 2b.

このような構成により、パワー半導体素子が両面から冷却されるだけでなく、配線基板６が両面から冷却することができ、配線基板６の冷却性能を向上させることができる。なお、配線基板６の両面を冷却する必要が無い場合は、駆動素子７ａ及び駆動素子７ｂに近い放熱板２ａのみを配線基板６と対向させるように形成してもよい。   With such a configuration, not only the power semiconductor element is cooled from both sides, but also the wiring board 6 can be cooled from both sides, and the cooling performance of the wiring board 6 can be improved. In addition, when it is not necessary to cool both surfaces of the wiring board 6, only the heat radiating plate 2 a close to the driving element 7 a and the driving element 7 b may be formed to face the wiring board 6.

また複数の入出力端子５は、配線基板６に信号を伝達する。図１(ａ)及び図１(ｂ)に示されるように、複数の入出力端子５は、モールド樹脂材４から突出する。また複数の入出力端子５は、それぞれの入出力端子５の上面が仮想平面５ａと重なるように並べられる。   The plurality of input / output terminals 5 transmit signals to the wiring board 6. As shown in FIGS. 1A and 1B, the plurality of input / output terminals 5 protrude from the mold resin material 4. The plurality of input / output terminals 5 are arranged so that the upper surface of each input / output terminal 5 overlaps the virtual plane 5a.

このような構成により、モールド樹脂材４を流し込むための型を複数の入出力端子５に接触させた状態で、この型にモールド樹脂材４を流し込むことができ、モールド樹脂材４が漏れ難くなる。   With such a configuration, the mold resin material 4 can be poured into the mold in a state in which the mold for pouring the mold resin material 4 is in contact with the plurality of input / output terminals 5, and the mold resin material 4 is difficult to leak. .

図４は、図１に示す実施形態に係るパワー半導体モジュール１の樹脂モールド加工を示す図である。図４の上側の構造図はモールド樹脂材４を取り除いたパワー半導体モジュール１であり、図４の下側の構造図はモールド樹脂材４の注入が終了した直後の断面図である。   FIG. 4 is a diagram showing resin molding of the power semiconductor module 1 according to the embodiment shown in FIG. 4 is the power semiconductor module 1 from which the mold resin material 4 is removed, and the lower structure diagram of FIG. 4 is a cross-sectional view immediately after the injection of the mold resin material 4 is completed.

モールドライン２１aおよびモールドライン２１ｂに、モールド樹脂材４の流出を防ぐために、タイバー構造２０aおよびタイバー構造２０ｂを備える。樹脂モールド加工工程では、樹脂モールド加工前のパワー半導体モジュール１を樹脂モールド冶具２２で抑えて密閉性を保ちながら、一定の圧力で樹脂を注入する必要がある。本実施例のように、タイバー構造を備えることにより、樹脂の流出を防ぐことができる。   The mold line 21a and the mold line 21b are provided with a tie bar structure 20a and a tie bar structure 20b in order to prevent the mold resin material 4 from flowing out. In the resin mold processing step, it is necessary to inject the resin with a constant pressure while holding the power semiconductor module 1 before the resin mold processing with the resin mold jig 22 and maintaining hermeticity. By providing the tie bar structure as in this embodiment, the resin can be prevented from flowing out.

図７は、図１のパワー半導体モジュール１の回路構成図である。   FIG. 7 is a circuit configuration diagram of the power semiconductor module 1 of FIG.

プリドライバ１７は、上位制御部からの指令信号を受けて上アームのパワー半導体素子１１ａを駆動するための第１駆動信号と下アームのパワー半導体素子１１ｂを駆動するための第２駆動信号の両方を出力する。   The pre-driver 17 receives both a command signal from the upper control unit, and both a first drive signal for driving the power semiconductor element 11a of the upper arm and a second drive signal for driving the power semiconductor element 11b of the lower arm. Is output.

そして、ドライバＩＣを構成する駆動素子７aは第１駆動信号を受けてパワー半導体素子１１ａを駆動し、ドライバＩＣを構成する駆動素子７ｂは第２駆動信号を受けてパワー半導体素子１１ｂを駆動する。   The drive element 7a constituting the driver IC receives the first drive signal and drives the power semiconductor element 11a, and the drive element 7b constituting the driver IC receives the second drive signal and drives the power semiconductor element 11b.

さらに第１駆動信号および第２駆動信号との間には、パワー半導体素子１１ａおよびパワー半導体素子１１ｂが同時にＯＮとならないように、上下アームのパワー半導体素子の双方が遮断状態とするためのデッドタイム期間が設けられている。   Further, a dead time for turning off both the power semiconductor elements of the upper and lower arms between the first drive signal and the second drive signal so that the power semiconductor elements 11a and 11b are not simultaneously turned ON. There is a period.

本実施形態においては、基板上の配線遅延などにより、プリドライバ１７で設けたデッドタイムのタイミングずれが生じないように、駆動素子７aとパワー半導体素子１１ａの信号配線経路と駆動素子７ｂとパワー半導体素子１１ｂの信号配線経路が略同一となるように、駆動素子７a及び駆動素子７ｂが配置されている。   In the present embodiment, the signal wiring path of the driving element 7a and the power semiconductor element 11a, the driving element 7b, and the power semiconductor are not caused by a delay in timing of the dead time provided by the pre-driver 17 due to wiring delay on the substrate. The drive element 7a and the drive element 7b are arranged so that the signal wiring paths of the element 11b are substantially the same.

さらにプリドライバ１７は駆動素子７aと駆動素子７ｂとの間に配置することにより、プリドライバ１７と駆動素子７aの信号配線経路とプリドライバ１７と駆動素子７ｂの信号配線経路が略同一となるように構成されている。   Further, the pre-driver 17 is disposed between the driving element 7a and the driving element 7b, so that the signal wiring path of the pre-driver 17 and the driving element 7a is substantially the same as the signal wiring path of the pre-driver 17 and the driving element 7b. It is configured.

図１０を参照して、本実施形態に係るパワー半導体モジュール１を用いたインバータシステムについて説明する。図１０は、本実施形態に係るインバータシステムの構成の概略図である。   With reference to FIG. 10, an inverter system using the power semiconductor module 1 according to the present embodiment will be described. FIG. 10 is a schematic diagram of the configuration of the inverter system according to the present embodiment.

本実施形態に係るパワー半導体モジュール１を合計３つ用いて、図１０に記した３相のインバータシステム４２を構成する。インバータシステム４２では、パワー半導体モジュール１を３つ有するほかに、平滑化コンデンサ４１も内蔵している。また、パワー半導体モジュール１を制御するためのコントローラ４３も内蔵している。パワー半導体モジュール１の正極側端子３０、負極側端子３１には、外部から高圧電源４０が接続される。コントローラ４３には外部から低圧電源４５が接続される。   A total of three power semiconductor modules 1 according to the present embodiment are used to constitute the three-phase inverter system 42 shown in FIG. In addition to having three power semiconductor modules 1, the inverter system 42 also includes a smoothing capacitor 41. A controller 43 for controlling the power semiconductor module 1 is also built in. A high voltage power supply 40 is connected to the positive terminal 30 and the negative terminal 31 of the power semiconductor module 1 from the outside. A low voltage power supply 45 is connected to the controller 43 from the outside.

３つのパワー半導体モジュール１はそれぞれＵ相、Ｖ相、Ｗ相に対応しており、各相のパワー半導体モジュール１の交流側端子３２はモータ４４のＵ相、Ｖ相、Ｗ相にそれぞれ接続される。   The three power semiconductor modules 1 correspond to the U phase, the V phase, and the W phase, respectively. The AC side terminals 32 of the power semiconductor modules 1 of the respective phases are connected to the U phase, the V phase, and the W phase of the motor 44, respectively. The

コントローラ４３からの制御信号は各相のパワー半導体モジュール１に内蔵する配線基板６に入力され、制御回路で各相のパワー半導体素子を駆動する。また各パワー半導体モジュールの動作状態を制御回路からコントローラ４３に出力される。   A control signal from the controller 43 is input to the wiring board 6 built in the power semiconductor module 1 of each phase, and the power semiconductor element of each phase is driven by the control circuit. The operating state of each power semiconductor module is output from the control circuit to the controller 43.

図１１に従来のパワー半導体モジュール５１を３つ用いた場合のインバータシステムの構造例を示す。従来のインバータシステムでは、インバータ筺体５０に水路５２を設け、パワー半導体モジュール５１を水路５２内に配置する。また、パワー半導体モジュール５２のパワー端子はバスバー５７を介して平滑化コンデンサ４１に接続される。一方、信号端子５６はドライバ基板５３に接続されており、さらに前記ドライバ基板５３は信号ハーネス５５を介してコントローラ基板４３に接続される。このような構造のインバータシステムにおいては、ドライバ基板５３とコントローラ基板４３の２枚の基板が必要であり、インバータシステム内に大きなスペースを確保する必要があり、２枚の基板接続するための信号ハーネス５５も必要であり、複雑な構造となる。   FIG. 11 shows an example of the structure of an inverter system when three conventional power semiconductor modules 51 are used. In the conventional inverter system, a water channel 52 is provided in the inverter housing 50, and the power semiconductor module 51 is disposed in the water channel 52. The power terminal of the power semiconductor module 52 is connected to the smoothing capacitor 41 via the bus bar 57. On the other hand, the signal terminal 56 is connected to the driver board 53, and the driver board 53 is further connected to the controller board 43 via the signal harness 55. In the inverter system having such a structure, two boards of a driver board 53 and a controller board 43 are necessary, and it is necessary to secure a large space in the inverter system, and a signal harness for connecting the two boards. 55 is also necessary, resulting in a complicated structure.

図１２に本実施形態に係るインバータシステムの構造の一例を示す。本構造では、パワー半導体モジュール１はこれまでの実施例で述べた駆動回路を内蔵した構造となっており、さらにパワー半導体モジュール１の各々に水路５２を設け、それぞれのパワー半導体モジュールの水路は独立した構造とする。また、後述する図９にて説示するパワー半導体モジュールを用いることにより、パワー半導体モジュール１のパワー系の端子部はパワー半導体モジュール１のケースを挟んで駆動信号端子の反対側に位置している構造となっている。   FIG. 12 shows an example of the structure of the inverter system according to this embodiment. In this structure, the power semiconductor module 1 has a structure in which the drive circuit described in the embodiments so far is built. Further, each power semiconductor module 1 is provided with a water channel 52, and the water channel of each power semiconductor module is independent. The structure is as follows. Further, by using the power semiconductor module illustrated in FIG. 9 described later, the power system terminal portion of the power semiconductor module 1 is located on the opposite side of the drive signal terminal with the case of the power semiconductor module 1 interposed therebetween. It has become.

また、駆動信号端子はパワー半導体モジュール１の一端から突出しており、コントローラ基板４３に接続される。一方、パワー半導体モジュール１の駆動信号端子の反対側に設けたパワー端子はパワーボード６０を介して平滑化コンデンサ４１に接続される。また本インバータシステムの構造では、図１１に示した従来のインバータシステムに比べて、ドライバ基板とこのドライバ基板をコントローラ基板に接続するための信号ハーネスを不要としたことで、より大きなスペースを必要とせず、インバータシステム全体の小型化が期待できる。また、低圧信号系の必要とするスペースを低減したことで、高圧信号配線のためにより大きなスペースを確保することができ、高圧信号配線の寄生抵抗を低減し、寄生抵抗による発熱を抑えることができ、インバータシステムの高信頼化、高効率化が期待できる。   Further, the drive signal terminal protrudes from one end of the power semiconductor module 1 and is connected to the controller board 43. On the other hand, the power terminal provided on the opposite side of the drive signal terminal of the power semiconductor module 1 is connected to the smoothing capacitor 41 via the power board 60. Further, in the structure of this inverter system, a driver board and a signal harness for connecting the driver board to the controller board are not required as compared with the conventional inverter system shown in FIG. Therefore, it can be expected that the entire inverter system will be downsized. In addition, by reducing the space required for the low-voltage signal system, it is possible to secure a larger space for the high-voltage signal wiring, reduce the parasitic resistance of the high-voltage signal wiring, and suppress the heat generation due to the parasitic resistance. High reliability and high efficiency of the inverter system can be expected.

なお、本実施形態により、ドライバ基板の搭載される回路部品の一部をパワー半導体モジュール１内に搭載し、他の回路部品をコントローラ基板に搭載することにより、ドライバ基板を不要とすることもできる。   According to the present embodiment, a part of the circuit component on which the driver board is mounted is mounted in the power semiconductor module 1 and the other circuit parts are mounted on the controller board, thereby making the driver board unnecessary. .

図１３を参照して、本実施例のパワー半導体モジュール１を用いたインバータシステムをエンジンとモータの両方を使用して走行するはハイブリット自動車（ＨＥＶ）システムに適用した場合の実施例について説明する。図１３はハイブリット自動車システムの概略図である。   With reference to FIG. 13, an embodiment in which an inverter system using the power semiconductor module 1 of this embodiment is applied to a hybrid vehicle (HEV) system that uses both an engine and a motor will be described. FIG. 13 is a schematic diagram of a hybrid automobile system.

本実施形態に係る電力変換装置はハイブリッド自動車(以下ＨＥＶと称す)のみならず、モータのみで走行する電気自動車（以下ＥＶと称す）にも適用可能であり、また一般産業機械に使用されているモータを駆動するための電力変換装置としても使用可能である。   The power conversion device according to the present embodiment can be applied not only to a hybrid vehicle (hereinafter referred to as HEV) but also to an electric vehicle (hereinafter referred to as EV) that runs only by a motor, and is used in general industrial machines. It can also be used as a power converter for driving a motor.

図１３に示したＨＥＶシステムでは、エンジン（ＥＮＧ）７５及びモータジェネレータ（ＭＧ）７０は車両の走行用トルクを発生する。またモータジェネレータは回転トルクを発生するだけでなく、モータジェネレータに外部から加えられる機械エネルギを電力に変換する機能を有する。   In the HEV system shown in FIG. 13, the engine (ENG) 75 and the motor generator (MG) 70 generate traveling torque for the vehicle. The motor generator not only generates rotational torque, but also has a function of converting mechanical energy applied from the outside to the motor generator into electric power.

モータジェネレータ７０は、例えば同期機あるいは誘導機であり、上述の通り、運転方法によりモータとしても発電機としても動作する。モータジェネレータ７０を自動車に搭載する場合に、小型で高出力を得ることが望ましく、ネオジム(Nd)などの磁石を使用した永久磁石型の同期電動機が適している。また永久磁石型の同期電動機は、誘導電動機に比べて回転子の発熱が少なく、この観点でも自動車用として好適である。   The motor generator 70 is, for example, a synchronous machine or an induction machine, and operates as a motor or a generator depending on the operation method as described above. When the motor generator 70 is mounted on an automobile, it is desirable to obtain a small and high output, and a permanent magnet type synchronous motor using a magnet such as neodymium (Nd) is suitable. In addition, the permanent magnet type synchronous motor generates less heat from the rotor than the induction motor, and is also suitable for automobiles from this viewpoint.

エンジンの出力側の出力トルクは動力分配機構（ＴＳＭ）７４を介してモータジェネレータ７０伝達され、動力分配機構７４からの回転トルクあるいはモータジェネレータ７０が発生する回転トルクは、トランスミッションＴＭ７３およびディファレンシャルギアＤＥＦ７７を介して車輪７８に伝達される。一方回生制動の運転時には、車輪から回転トルクがモータジェネレータ７０に伝達され、供給されてきた回転トルクに基づいて交流電力を発生する。発生した交流電力は電力変換装置により直流電力に変換され、高電圧用のバッテリシステム７６を充電し、充電された電力は再び走行エネルギとして使用される。   The output torque on the output side of the engine is transmitted to the motor generator 70 via the power distribution mechanism (TSM) 74, and the rotational torque from the power distribution mechanism 74 or the rotational torque generated by the motor generator 70 is transmitted to the transmission TM73 and the differential gear DEF77. Via the wheel 78. On the other hand, during regenerative braking operation, rotational torque is transmitted from the wheels to the motor generator 70, and AC power is generated based on the supplied rotational torque. The generated AC power is converted to DC power by the power converter, and the high voltage battery system 76 is charged. The charged power is used again as travel energy.

図２を参照して、本実施形態２に係るパワー半導体モジュール１について説明する。図２は、図１の実施形態の変形例としてのパワー半導体モジュール１の概観図である。   With reference to FIG. 2, the power semiconductor module 1 which concerns on this Embodiment 2 is demonstrated. FIG. 2 is an overview of a power semiconductor module 1 as a modification of the embodiment of FIG.

図１の実施形態と異なるところは、配線基板６を保持するためのスペーサ１６を設けたことである。スペーサ１６は、配線基板６とはんだ材等の接着剤により接続されるとともに、絶縁部材３ｂを介して放熱板２ｂに支持される。   A difference from the embodiment of FIG. 1 is that a spacer 16 for holding the wiring board 6 is provided. The spacer 16 is connected to the wiring substrate 6 by an adhesive such as a solder material, and is supported by the heat sink 2b via the insulating member 3b.

つまりスペーサ１６は、スペーサ１６の下面が第３導体板１４ｂの下面と同一面上に配置されるように形成される。   That is, the spacer 16 is formed such that the lower surface of the spacer 16 is disposed on the same plane as the lower surface of the third conductor plate 14b.

このような構成により、配線基板６の一端は突出部１４０により支持され、配線基板６の他端はスペーサ１６により支持されるので、配線基板６の両端を安定に固定することでき、実装信頼性の向上が図ることができる。   With such a configuration, one end of the wiring board 6 is supported by the protrusion 140 and the other end of the wiring board 6 is supported by the spacer 16, so that both ends of the wiring board 6 can be stably fixed, and mounting reliability is improved. Can be improved.

なお、スペーサ１６と配線基板６が接続される接続部は、配線導体１５ａや配線導体１５ｂが設けられた配線基板６の面とは反対側に設けられる。これにより、配線導体１５ａや配線導体１５ｂが、スペーサ１６と配線基板６が接続される接続部と干渉することを避けることができる。   The connection portion where the spacer 16 and the wiring board 6 are connected is provided on the side opposite to the surface of the wiring board 6 on which the wiring conductor 15a and the wiring conductor 15b are provided. Thereby, it can avoid that the wiring conductor 15a and the wiring conductor 15b interfere with the connection part to which the spacer 16 and the wiring board 6 are connected.

図３を参照して、本実施形態３に係るパワー半導体モジュール１について説明する。図３は、図１の実施形態の変形例としてのパワー半導体モジュール１の概観図である。   With reference to FIG. 3, the power semiconductor module 1 which concerns on this Embodiment 3 is demonstrated. FIG. 3 is a schematic view of a power semiconductor module 1 as a modification of the embodiment of FIG.

図１の実施形態と異なるところは、配線基板６は、第４導体板１２ｂ及び第３導体板１４ｂの中央部に向かって突出する突出部６ａを有することである。この突出部６ａは、第４導体板１２ｂと第３導体板１４ｂにより挟持される。   The difference from the embodiment of FIG. 1 is that the wiring board 6 has a protruding portion 6a that protrudes toward the center of the fourth conductor plate 12b and the third conductor plate 14b. The protrusion 6a is sandwiched between the fourth conductor plate 12b and the third conductor plate 14b.

このような構成により、配線基板６がさらに強固に固定される。   With such a configuration, the wiring board 6 is more firmly fixed.

図５を参照して、実施例４に係るパワー半導体モジュール１について説明する。図５は、図４の実施形態の変形例としてのパワー半導体モジュール１の概観図である。図５(ａ)はモールド樹脂材４を取り除いたパワー半導体モジュール１の上面図である。図５(ｂ)はモールド樹脂材４を注入した直後のパワー半導体モジュール１であり、図５(ａ)のＡＡ断面の矢印方向から見た断面図である。   With reference to FIG. 5, the power semiconductor module 1 which concerns on Example 4 is demonstrated. FIG. 5 is an overview of a power semiconductor module 1 as a modification of the embodiment of FIG. FIG. 5A is a top view of the power semiconductor module 1 with the mold resin material 4 removed. FIG. 5B shows the power semiconductor module 1 immediately after the molding resin material 4 is injected, and is a cross-sectional view seen from the arrow direction of the AA cross section of FIG.

本実施例４では、実施例１と異なる点を中心に説明する。正極側端子３１は第１導体板１４ａと接続され、負極側端子３０は第４導体板１２ｂと接続され、交流側端子３２は第３導体板１４ｂと接続される。   The fourth embodiment will be described with a focus on differences from the first embodiment. The positive terminal 31 is connected to the first conductor plate 14a, the negative terminal 30 is connected to the fourth conductor 12b, and the alternating terminal 32 is connected to the third conductor 14b.

正極側端子３１、負極側端子３０及び交流側端子３２は、配線基板６の下方を通って、モールド樹脂材４から突出する。つまり、正極側端子３１、負極側端子３０及び交流側端子３２は、配線導体１５ａ及び配線導体１５ｂが実装された面とは反対側の面の近くに配置される。この構成により、正極側端子３１、負極側端子３０及び交流側端子３２から放射されるノイズが配線導体１５ａ及び配線導体１５ｂに混入することを抑制することができる。   The positive electrode side terminal 31, the negative electrode side terminal 30, and the alternating current side terminal 32 pass from below the wiring substrate 6 and protrude from the mold resin material 4. That is, the positive electrode side terminal 31, the negative electrode side terminal 30, and the AC side terminal 32 are arranged near the surface opposite to the surface on which the wiring conductor 15a and the wiring conductor 15b are mounted. With this configuration, it is possible to suppress the noise radiated from the positive terminal 31, the negative terminal 30, and the AC terminal 32 from being mixed into the wiring conductor 15a and the wiring conductor 15b.

また、入出力端子５は、正極側端子３１、負極側端子３０及び交流側端子３２と同一方向に突出する。そして入出力端子５は、その一部が屈曲し、モールド樹脂材４から突出する延長端子５ｂと接続される。   The input / output terminal 5 protrudes in the same direction as the positive terminal 31, the negative terminal 30 and the AC terminal 32. The input / output terminal 5 is partially bent and connected to the extension terminal 5 b protruding from the mold resin material 4.

この延長端子５ｂ、正極側端子３１、負極側端子３０及び交流側端子３２は、それぞれの上面が仮想平面５ｃと重なるように並べられる。   The extension terminal 5b, the positive electrode side terminal 31, the negative electrode side terminal 30, and the AC side terminal 32 are arranged so that their upper surfaces overlap the virtual plane 5c.

このような構成により、モールド樹脂材４を流し込むための型を延長端子５ｂ、正極側端子３１、負極側端子３０及び交流側端子３２に接触させた状態で、この型にモールド樹脂材４を流し込むことができ、モールド樹脂材４が漏れ難くなる。   With such a configuration, the mold resin material 4 is poured into the mold while the mold for pouring the mold resin material 4 is in contact with the extension terminal 5b, the positive electrode side terminal 31, the negative electrode side terminal 30, and the AC side terminal 32. This makes it difficult for the mold resin material 4 to leak.

図６を参照して、実施例５に係るパワー半導体モジュール１における、他の実施例に係る配線基板６００上の配線構造について説明する。図６は、図１(a)のＢＢ断面の方向から見た、本実施形態の配線構造を示すパワー半導体モジュール１の断面図である。   With reference to FIG. 6, the wiring structure on the wiring board 600 according to another embodiment in the power semiconductor module 1 according to the fifth embodiment will be described. FIG. 6 is a cross-sectional view of the power semiconductor module 1 showing the wiring structure of the present embodiment as seen from the direction of the BB cross section of FIG.

本実施形態では、駆動素子７ａを搭載した配線基板６００は少なくとも２層以上の配線層を有する多層配線基板となっている。配線基板６００は、絶縁性の基板内に内部配線６０１を有する。シールド配線層２３aは、内部配線６０１と対向するとともに配線基板６００の上面に形成される。シールド層２３ｂは、内部配線６０１を挟んでシールド配線層２３aと対向するとともに配線基板６００下面に形成される。   In the present embodiment, the wiring board 600 on which the driving element 7a is mounted is a multilayer wiring board having at least two wiring layers. The wiring substrate 600 has an internal wiring 601 in an insulating substrate. The shield wiring layer 23 a is formed on the upper surface of the wiring substrate 600 while facing the internal wiring 601. The shield layer 23 b faces the shield wiring layer 23 a with the internal wiring 601 interposed therebetween and is formed on the lower surface of the wiring substrate 600.

シールド配線層２３ａおよびシールド配線層２３ｂは電位的に比較的に安定である低圧側電源配線とすることが好適である。このような構造をなすことで、パワー半導体素子を搭載した第２導体板１２aおよび第１導体板１４aからのスイッチングノイズを遮蔽する効果があり、低圧側の信号の信頼性の向上が可能である。またシールド配線層２３ａおよびシールド配線層２３ｂは電位的にフローティングであってもよく、金属配線層を配置するだけでも、スイッチングノイズの遮蔽効果がある。   The shield wiring layer 23a and the shield wiring layer 23b are preferably low-voltage power supply wirings that are relatively stable in terms of potential. With such a structure, there is an effect of shielding switching noise from the second conductor plate 12a and the first conductor plate 14a on which the power semiconductor elements are mounted, and the reliability of the low-voltage side signal can be improved. . Further, the shield wiring layer 23a and the shield wiring layer 23b may be floating in terms of potential, and even if only a metal wiring layer is disposed, there is an effect of shielding switching noise.

図８を参照して、実施例６に係るパワー半導体モジュールの内部回路構成について説明する。図８は、図７に示した本実施形態に係るパワー半導体モジュールの回路構成の変形例の概略図である。図８（ａ）はモールド樹脂材４を取り除いたパワー半導体モジュール１の上面図であり、図８（ｂ）は図８（ａ）に示されるパワー半導体モジュール１の回路構成図である。   With reference to FIG. 8, the internal circuit configuration of the power semiconductor module according to the sixth embodiment will be described. FIG. 8 is a schematic diagram of a modification of the circuit configuration of the power semiconductor module according to the present embodiment shown in FIG. FIG. 8A is a top view of the power semiconductor module 1 with the mold resin material 4 removed, and FIG. 8B is a circuit configuration diagram of the power semiconductor module 1 shown in FIG.

電源生成回路３９が配線基板６上に配置される。電源生成回路３９は、駆動素子７ａ、駆動素子７ｂおよびプリドライバ１７が使用する電源を出力する。   A power generation circuit 39 is disposed on the wiring board 6. The power generation circuit 39 outputs the power used by the drive element 7a, the drive element 7b, and the pre-driver 17.

このような構造により、パワー半導体モジュール１を駆動するための低圧側電源をパワー半導体モジュールの外から与えることなく、高圧側の電源さえ与えれば、パワー半導体モジュール１は動作することが可能であり、パワー半導体モジュール１の配線が簡素化されると共に、上位コントロール基板で電源を作る必要がなく、インバータシステム全体としての小型化が期待できる。   With such a structure, the power semiconductor module 1 can operate without providing a low-voltage power supply for driving the power semiconductor module 1 from the outside of the power semiconductor module, as long as the high-voltage power supply is provided. The wiring of the power semiconductor module 1 is simplified, and it is not necessary to make a power source with the upper control board, so that the size of the entire inverter system can be expected.

図９を参照して、実施例７に係る本発明のパワー半導体モジュール１の構造について説明する。図９（ａ）は本実施例に係るパワー半導体モジュール１の外観斜視図であり、図９（ｂ）は図９（ａ）のＡＡ断面の矢印方向から見た断面図である。   With reference to FIG. 9, the structure of the power semiconductor module 1 of this invention which concerns on Example 7 is demonstrated. FIG. 9A is an external perspective view of the power semiconductor module 1 according to the present embodiment, and FIG. 9B is a cross-sectional view as seen from the arrow direction of the AA cross section of FIG. 9A.

ケース８０は、実施例１に説示された封止体４ａを収納空間内に収納する。ケース８０は、絶縁部材３ａを挟んで封止体４ａの一方の面と対向する放熱板２ａと、絶縁部材３ｂを挟んで封止体４ａの他方の面と対向する放熱板２ｂと、を有する。また、ケース８０は、放熱板２ａの一方の端部と放熱板２ｂの一方の端部に接続されるフランジ部８３と、放熱板２ａの他方の端部と放熱板２ｂの他方の端部に接続されるフランジ部８４と、を有する。   The case 80 stores the sealing body 4a described in the first embodiment in the storage space. The case 80 has a heat radiating plate 2a facing the one surface of the sealing body 4a across the insulating member 3a, and a heat radiating plate 2b facing the other surface of the sealing body 4a across the insulating member 3b. . In addition, the case 80 has a flange portion 83 connected to one end of the heat sink 2a and one end of the heat sink 2b, the other end of the heat sink 2a, and the other end of the heat sink 2b. And a flange portion 84 to be connected.

また、フィン８１が放熱板２ａの外面に形成され、フィン８２が放熱板２ｂの外面に形成される
フランジ部８３は、負極側端子３０、正極側端子３１及び交流側端子３２を貫通させる貫通孔８４を形成する。フランジ部８５は、入出力端子５を貫通させる貫通孔８６を形成する。 Further, the fin 81 is formed on the outer surface of the heat radiating plate 2a, and the fin 82 is formed on the outer surface of the heat radiating plate 2b. The flange portion 83 is a through hole through which the negative electrode side terminal 30, the positive electrode side terminal 31, and the AC side terminal 32 pass. 84 is formed. The flange portion 85 forms a through hole 86 that allows the input / output terminal 5 to pass therethrough.

このケース８０は、フランジ部８３及びフランジ部８５が流路形成体に固定されることにより、放熱板２ａの外面及び放熱板２ｂの外面が冷却媒体と直接接触するように配置される。   The case 80 is disposed such that the outer surface of the heat radiating plate 2a and the outer surface of the heat radiating plate 2b are in direct contact with the cooling medium by fixing the flange portion 83 and the flange portion 85 to the flow path forming body.

このような構造により、パワー半導体素子からの発熱を放熱板２ａ及び放熱板２ｂで放熱することが可能であると共に、駆動素子７ａも放熱部に熱的に接触することにより効率よく放熱することができ、駆動素子が熱により劣化することを防ぐことが可能である。   With such a structure, heat generated from the power semiconductor element can be radiated by the heat radiating plate 2a and the heat radiating plate 2b, and the drive element 7a can also efficiently radiate heat by being in thermal contact with the heat radiating portion. It is possible to prevent the drive element from being deteriorated by heat.

また前記駆動素子と電気的に接続される入出力端子５は、ケース８０の一端に設けられた貫通孔８４からケース８０の外部に突出すると共に、入出力端子５よりも強電系である負極側端子３０、正極側端子３１及び交流側端子３２は放熱板２ａ、放熱板２ｂ、フランジ部８３及びフランジ部８５を挟んで貫通孔８６から突出している。   The input / output terminal 5 electrically connected to the driving element protrudes from the through hole 84 provided at one end of the case 80 to the outside of the case 80, and is on the negative side that is stronger than the input / output terminal 5. The terminal 30, the positive electrode side terminal 31, and the AC side terminal 32 protrude from the through hole 86 with the heat radiating plate 2 a, the heat radiating plate 2 b, the flange portion 83, and the flange portion 85 interposed therebetween.

このような構造により、駆動素子７ａに電気的に接続される駆動信号配線とパワー半導体素子の出力信号を遠ざけることができ、電気的な結合を小さくすることで、パワー半導体素子のスイッチングノイズからの干渉を抑えることが可能である。また、駆動素子とパワー配線部を物理的により遠いところに配置することが可能であり、パワー配線部からの伝熱を最小化することが可能である。   With such a structure, the drive signal wiring electrically connected to the drive element 7a and the output signal of the power semiconductor element can be kept away, and by reducing the electrical coupling, the switching noise of the power semiconductor element can be reduced. Interference can be suppressed. In addition, it is possible to dispose the drive element and the power wiring portion physically farther away, and it is possible to minimize heat transfer from the power wiring portion.

本発明は、電力変換装置に関し、特に、ＨＥＶやＥＶに用いるインバータシステムに適用可能である。また、一般産業機械に使用されているモータを駆動するための電力変換装置としても使用可能である。
The present invention relates to a power converter, and is particularly applicable to an inverter system used for HEV and EV. It can also be used as a power converter for driving a motor used in general industrial machines.

１ ・・・パワー半導体モジュール
２ａ・・・放熱板
２ｂ・・・放熱板
３ａ・・・絶縁部材
３ｂ・・・絶縁部材
４ ・・・モールド樹脂材
４ａ・・・封止体
５ ・・・入出力端子
５ａ・・・仮想平面
５ｂ・・・延長端子
６ ・・・配線基板
６ａ・・・突出部
７ａ・・・駆動素子
７ｂ・・・駆動素子
８ａ ・・・ボンディングワイヤ
８ｂ ・・・ボンディングワイヤ
９ａ ・・・パッド
９ｂ ・・・パッド
１１ａ・・・ＩＧＢＴ
１１ｂ・・・ＩＧＢＴ
１２ａ・・・第２導体板
１２ｂ・・・第４導体板
１３ａ・・・ダイオード
１３ｂ・・・ダイオード
１４ａ・・・第１導体板
１４ｂ・・・第３導体板
１５ａ・・・配線導体
１５ｂ・・・配線導体
１６・・・スペーサ
１７・・・プリドライバ
２０a、２０b・・・タイバー構造
２１a、２１b・・・モールドライン
２２・・・モールド冶具
２３a・・・シールド配線層
２３b・・・シールド配線層
３０・・・負極側端子
３１・・・正極側端子
３２・・・交流側端子
３９・・・電源生成回路
４０・・・高圧電源
４１・・・平滑化コンデンサ
４２・・・インバータシステム
４３・・・コントローラ
４４・・・モータ
５０・・・インバータ筺体
５１・・・パワー半導体モジュール
５２・・・水路
５３・・・ドライバ基板
５５・・・ワイヤハーネス
５７・・・バスバー
６０・・・パワーボード
７０・・・モータジェネレータ
７３・・・トランスミッション
７４・・・動力分配機構
７５・・・エンジン
７６・・・バッテリ
７７・・・ディファレンシャルギア
７８・・・車輪
８０・・・ケース
８１・・・フィン
８２・・・フィン
８３・・・フランジ部
８４・・・貫通孔
８５・・・フランジ部
８６・・・貫通孔
１２０・・・突出部
１４０・・・突出部
６００・・・配線基板
６０１・・・内部配線 DESCRIPTION OF SYMBOLS 1 ... Power semiconductor module 2a ... Heat sink 2b ... Heat sink 3a ... Insulation member 3b ... Insulation member 4 ... Mold resin material 4a ... Sealing body 5 ... In Output terminal 5a ... Virtual plane 5b ... Extension terminal 6 ... Wiring board 6a ... Projection 7a ... Drive element 7b ... Drive element 8a ... Bonding wire 8b ... Bonding wire 9a: Pad 9b: Pad 11a: IGBT
11b ... IGBT
12a ... second conductor plate 12b ... fourth conductor plate 13a ... diode 13b ... diode 14a ... first conductor plate 14b ... third conductor plate 15a ... wiring conductor 15b ..Wiring conductor 16 ... Spacer 17 ... Predriver 20a, 20b ... Tie bar structure 21a, 21b ... Mold line 22 ... Mold jig 23a ... Shield wiring layer 23b ... Shield wiring Layer 30 ... Negative terminal 31 ... Positive terminal 32 ... AC terminal 39 ... Power generation circuit 40 ... High voltage power supply 41 ... Smoothing capacitor 42 ... Inverter system 43 .... Controller 44 ... Motor 50 ... Inverter housing 51 ... Power semiconductor module 52 ... Water channel 53 ... Driver board 55 ... Wire harness 57 ... Bus -60 ... Power board 70 ... Motor generator 73 ... Transmission 74 ... Power distribution mechanism 75 ... Engine 76 ... Battery 77 ... Differential gear 78 ... Wheel 80 ... Case 81 ... Fin 82 ... Fin 83 ... Flange portion 84 ... Through hole 85 ... Flange portion 86 ... Through hole 120 ... Protrusion 140 ... Protrusion 600 ...・ Wiring board 601 ... Internal wiring

Claims (11)

直流電流を交流電流に変換するインバータ回路を構成するパワー半導体素子と、
前記パワー半導体素子と対向する第１導体板と、
前記パワー半導体素子を挟んで前記第１導体板と対向する第２導体板と、
前記パワー半導体素子を駆動する駆動用素子と、
前記駆動用素子を搭載する配線基板と、
前記パワー半導体素子と前記第１導体板と前記第２導体板と前記駆動用素子と前記配線基板を封止する封止材と、を備え、
前記第１導体板において当該第１導体板と前記パワー半導体素子との対向面の垂直方向から投影した場合に、
前記配線基板は、当該配線基板の射影部の一部が前記第１導体板の射影部と重なるように配置されるとともに前記第１導体板に接合され、
前記駆動用素子は、前記パワー半導体素子と前記駆動用素子と通る直線上において、当該駆動用素子を搭載する配線基板の射影部が前記第１導体板及び前記第２導体板の射影部と重ならないように配置されるパワー半導体モジュール。 A power semiconductor element constituting an inverter circuit for converting a direct current into an alternating current;
A first conductor plate facing the power semiconductor element;
A second conductor plate facing the first conductor plate across the power semiconductor element;
A driving element for driving the power semiconductor element;
A wiring board on which the driving element is mounted;
A sealing material for sealing the power semiconductor element, the first conductor plate, the second conductor plate, the driving element, and the wiring board;
When the first conductor plate is projected from the vertical direction of the opposing surface of the first conductor plate and the power semiconductor element,
The wiring board is arranged so that a part of the projected part of the wiring board overlaps with the projected part of the first conductive plate and is joined to the first conductive plate,
The driving element has a projected portion of the wiring board on which the driving element is mounted on a straight line passing through the power semiconductor element and the driving element and overlaps with the projected portions of the first conductor plate and the second conductor plate. Power semiconductor modules that are arranged so as not to become 請求項１に記載されたパワー半導体モジュールであって、
前記パワー半導体素子のゲート端子と前記配線基板を電気的に接続する配線導体を備え、
前記配線導体は、当該配線導体の射影部が前記第１導体板及び前記第２導体板の射影部と重ならないように配置されるパワー半導体モジュール。 A power semiconductor module according to claim 1,
A wiring conductor that electrically connects the gate terminal of the power semiconductor element and the wiring board;
The power semiconductor module, wherein the wiring conductor is disposed such that a projected portion of the wiring conductor does not overlap with a projected portion of the first conductor plate and the second conductor plate. 請求項１に記載されたパワー半導体モジュールであって、
前記配線基板は、当該配線基板の一部が前記第１導体板と前記第２導体板との間に挟まれる位置に配置され、
さらに前記配線基板は、前記第１導体板と前記第２導体板により支持されるパワー半導体モジュール。 A power semiconductor module according to claim 1,
The wiring board is disposed at a position where a part of the wiring board is sandwiched between the first conductor plate and the second conductor plate,
Furthermore, the wiring board is a power semiconductor module supported by the first conductor plate and the second conductor plate. 請求項１ないし３に記載されたいずれかのパワー半導体モジュールであって、
前記封止材によって封止された前記パワー半導体素子と前記第１導体板と前記第２導体板と前記駆動用素子と前記配線基板を封止体と定義し、
前記封止体の一方の面と対向する第１放熱板と、
前記封止体を挟んで、前記第１放熱板と対向する第２放熱板と、を備え、
前記封止体と対向する前記一方の面の垂直方向から投影した場合に、
前記駆動用素子は、当該駆動用素子の射影部が前記第１放熱板の射影部及び前記第２放熱板の射影部と重なるように配置されるパワー半導体モジュール。 The power semiconductor module according to any one of claims 1 to 3,
The power semiconductor element sealed with the sealing material, the first conductor plate, the second conductor plate, the driving element, and the wiring board are defined as a sealing body;
A first heat radiating plate facing one surface of the sealing body;
A second heat radiating plate facing the first heat radiating plate across the sealing body,
When projected from the vertical direction of the one surface facing the sealing body,
The driving element is a power semiconductor module arranged such that a projected portion of the driving element overlaps a projected portion of the first heat radiating plate and a projected portion of the second heat radiating plate. 請求項４に記載されたパワー半導体モジュールであって、
前記配線基板と前記第２放熱板との間に配置されるスペーサを備え、
前記スペーサは、当該スペーサの一面が前記第２導体板の一面と同一面上に配置されるように形成されるパワー半導体モジュール。 A power semiconductor module according to claim 4, wherein
A spacer disposed between the wiring board and the second heat sink;
The spacer is a power semiconductor module formed such that one surface of the spacer is disposed on the same surface as the one surface of the second conductor plate. 請求項１ないし５に記載されたいずれかのパワー半導体モジュールであって、
前記パワー半導体素子は、複数設けられ、
前記複数のパワー半導体素子は、前記インバータ回路の上アーム回路部を構成する第１パワー半導体素子と、前記インバータ回路の下アーム回路部を構成する第２パワー半導体素子と、を含んで構成され、
前記駆動用素子は、前記第１パワー半導体素子を駆動するための第１駆動信号及び前記第２パワー半導体素子を駆動するための第２駆動信号の両方を出力するパワー半導体モジュール。 The power semiconductor module according to any one of claims 1 to 5,
A plurality of the power semiconductor elements are provided,
The plurality of power semiconductor elements include a first power semiconductor element constituting an upper arm circuit part of the inverter circuit and a second power semiconductor element constituting a lower arm circuit part of the inverter circuit,
The power semiconductor module outputs the first drive signal for driving the first power semiconductor element and the second drive signal for driving the second power semiconductor element. 請求項６に記載されたパワー半導体モジュールであって、
前記駆動用素子は、前記第１パワー半導体素子及び前記第２パワー半導体素子の双方を遮断状態とするためのデッドタイム期間を設けるように、前記第１駆動信号及び前記第２駆動信号を出力し、
前記駆動用素子は、前記第１パワー半導体素子と当該駆動用素子と間の距離と前記第２パワー半導体素子と当該駆動用素子と間の距離を同じになるように配置されるパワー半導体モジュール。 A power semiconductor module according to claim 6,
The drive element outputs the first drive signal and the second drive signal so as to provide a dead time period for putting both the first power semiconductor element and the second power semiconductor element into a cut-off state. ,
The driving element is a power semiconductor module in which the distance between the first power semiconductor element and the driving element and the distance between the second power semiconductor element and the driving element are the same. 請求項１ないし７に記載されたいずれかのパワー半導体モジュールであって、
前記配線基板は、電気的絶縁性を有する基板部と、当該基板部の内部に配置されるとともに前記駆動用素子と接続される第１配線層と、当該基板部の表面に実装される第２配線層と、を有し、
前記駆動用素子を搭載した前記配線基板の面と垂直方向から投影した場合に、前記第１配線層は、当該第１配線層の射影部が前記第２配線層の射影部と重なるように形成されるパワー半導体モジュール。 The power semiconductor module according to any one of claims 1 to 7,
The wiring board includes an electrically insulating substrate portion, a first wiring layer disposed inside the substrate portion and connected to the driving element, and a second portion mounted on the surface of the substrate portion. A wiring layer;
The first wiring layer is formed such that the projected portion of the first wiring layer overlaps with the projected portion of the second wiring layer when projected from a direction perpendicular to the surface of the wiring board on which the driving element is mounted. Power semiconductor module. 請求項８に記載されたパワー半導体モジュールであって、
前記第２配線層は、電源トランスと電気的に接続されるとともに前記駆動用素子を駆動させる電力を伝達するパワー半導体モジュール。 A power semiconductor module according to claim 8, wherein
The second wiring layer is a power semiconductor module that is electrically connected to a power transformer and transmits electric power for driving the driving element. 請求項１ないし９に記載されたいずれかのパワー半導体モジュールであって、
前記封止材によって封止された前記パワー半導体素子と前記第１導体板と前記第２導体板と前記駆動用素子と前記配線基板を封止体と定義し、
前記封止体を収納するケースと、を備え、
前記ケースは、前記封止体と対向する部分に放熱部を有し、
前記封止体と対向する前記放熱部の対向面の垂直方向から投影した場合に、
前記駆動用素子は、当該駆動用素子の射影部が前記放熱部の射影部と重なるように配置されるパワー半導体モジュール。 A power semiconductor module according to any one of claims 1 to 9,
The power semiconductor element sealed with the sealing material, the first conductor plate, the second conductor plate, the driving element, and the wiring board are defined as a sealing body;
A case for storing the sealing body,
The case has a heat radiating portion at a portion facing the sealing body,
When projected from the vertical direction of the facing surface of the heat radiating portion facing the sealing body,
The drive element is a power semiconductor module in which a projection part of the drive element is arranged so as to overlap a projection part of the heat dissipation part. 請求項１ないし１０に記載されたいずれかのパワー半導体モジュールであって、
前記封止材によって封止された前記パワー半導体素子と前記第１導体板と前記第２導体板と前記駆動用素子と前記配線基板を封止体と定義し、
前記封止体を収納するケースと、
前記駆動用素子と電気的に接続される制御端子と、
前記直流電流又は前記交流電流を伝達する主端子と、を備え、
前記ケースは、前記封止体と対向する部分に放熱部を有するとともに、第１開口部と、当該放熱部を挟んで前記第１開口部とは反対側に配置される第２開口部を形成し、
前記制御端子は、前記ケース内部から前記第１開口部を介して前記ケース外部に突出し、
前記主端子は、前記ケースの内部から前記第２開口部を介して前記ケースの外部に突出するパワー半導体モジュール。 A power semiconductor module according to any one of claims 1 to 10,
The power semiconductor element sealed with the sealing material, the first conductor plate, the second conductor plate, the driving element, and the wiring board are defined as a sealing body;
A case for storing the sealing body;
A control terminal electrically connected to the driving element;
A main terminal for transmitting the direct current or the alternating current,
The case has a heat radiating portion at a portion facing the sealing body, and forms a first opening and a second opening disposed on the opposite side of the first opening with the heat radiating portion interposed therebetween. And
The control terminal protrudes from the inside of the case to the outside of the case through the first opening,
The main terminal is a power semiconductor module that protrudes from the inside of the case to the outside of the case through the second opening.
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