JP5812217B1 - Sputtering target and manufacturing method of sputtering target - Google Patents

Abstract

The present invention provides a sputtering target mainly composed of silicon that can increase the bending strength of the sputtering target, suppress the ease of cracking, reduce abnormal discharge, and stably form a film at high speed. A volume resistance of 10 Ω · cm or less, a theoretical density ratio of 85% to 99%, a bending strength of 65 N / mm 2 or more, and at least one metal element selected from Ni and Al: 0.5 Recon sputtering target containing 10 to 10 at% and B or P: 0.01 to 10000 ppm by weight, selected from Si powder containing B or P and having an average particle size of 150 μm or less, and Ni and Al A silicon sputtering target obtained by mixing and sintering a powder comprising at least one metal element or a silicite powder containing a metal element. [Selection figure] None

Description

  The present invention relates to a sputtering target mainly composed of silicon (Si), which suppresses target cracking, reduces abnormal discharge during sputtering, and enables stable high-speed film formation, and a method for manufacturing the same.

  In order to form a silicon (Si) film, a silicon nitride film, or a silicon oxide film, a silicon (Si) sputtering target is often used. The Si film is formed as it is using a Si sputtering target, but when a silicon nitride film or a silicon oxide film is formed, the Si sputtering target is used to contain nitrogen or oxygen. It is common to form a film using a reactive sputtering technique in an atmosphere.

  In order to form these films, a crystal Si sputtering target (single crystal or polycrystalline Si sputtering target) is generally used. Crystalline Si sputtering targets have advantages such as high purity and easy availability, but have problems such as being easily broken during sputtering and having a very slow film formation rate.

  Therefore, it has been proposed to improve the film formation rate and crack resistance by heat treatment and chemical etching treatment of the crystalline Si sputtering target (see, for example, Patent Document 1). On the other hand, in order to improve the film forming speed and crack resistance, a method of manufacturing a Si sintered body using Si powder has been proposed (see, for example, Patent Documents 2 and 3). By this manufacturing method, a high-density sputtering target having a sintered body density of 99% or more can be obtained.

  Furthermore, a sputtering target made of silicite of a refractory metal group made of Si and Mo, W, Ti, Nb, Cr, Ta has been proposed (see, for example, Patent Document 4). Also proposed is a method for producing a conductive Si sputtering target in which the target material is formed of metal silicon containing a metal having an atomic number of 11 or less by thermal spraying, and the resistivity of the target material is reduced. (For example, see Patent Document 5).

JP-A-7-268616 Japanese Patent No. 3819863 Japanese Patent No. 4354721 JP 2002-173765 A JP 2012-007218 A

  According to the sputtering target manufacturing method proposed in Patent Documents 2 and 3 above, a high-density sputtering target having a sintered body density of 99% or more can be obtained. In sputtering film formation using the obtained sputtering target, The film forming speed is the same as that of the crystalline Si sputtering target, and the problem remains that it is easily broken during sputtering.

Moreover, although the said patent document 4 has proposed the sputtering target which added Si of the refractory metal group which has Si as a main component and consists of Mo, W, Ti, Nb, Cr, Ta, Has the following problems.
i) According to a general production including from sintering to cooling, the process becomes complicated, and stress is easily generated by addition of a refractory metal, residual stress is generated, and the sintered body is easily cracked. Moreover, it is easy to break at the time of direct current (DC) sputtering film formation at high power density.
ii) In order to ensure the conductivity of the sputtering target, silicon can be added only up to 97% by weight. For this reason, a sputtering target having a silicon addition amount of 97% by weight or more cannot be produced.
iii) Since a refractory metal is used, it cannot be applied to a target manufacturing method using a thermal spraying method, and a sputtering target other than a flat plate shape such as a cylindrical sputtering target cannot be manufactured.

  On the other hand, Patent Document 5 proposes a method for producing a conductive Si sputtering target by a thermal spraying method, but here, the addition of a metal element having an atomic number of 11 or later has not been developed. Therefore, when sputtering film formation is performed using this Si sputtering target, the problem that the film formation speed is low cannot be solved.

  Accordingly, the present invention provides a sputtering target mainly composed of Si that increases the bending strength of the sputtering target, suppresses fragility, reduces abnormal discharge during sputtering, and can stably form a film at high speed. The purpose is to do.

  The inventors have found that by adding Ni or Al and B or P to a Si sputtering target, the resistance can be easily reduced, and further the strength of the sputtering target can be improved. Obtained.

  By adding Ni or Al and B or P to the Si sputtering target, the resistance of the sputtering target is reduced, and it can be applied to direct current (DC) sputtering or intermediate frequency (MF) sputtering, thereby improving the sputtering film formation. It was confirmed that the bending strength of the sputtering target was improved, and a sputtering target having excellent crack resistance during machining and further during sputtering was confirmed.

Therefore, the present invention has been obtained from the above findings, and the following configuration has been adopted in order to solve the above problems.
(1) The sputtering target of the present invention contains at least one metal element selected from Ni and Al: 0.5 to 10 at%, and B or P: 0.01 to 10,000 ppm by weight, with the remainder being A sintered body composed of Si and inevitable impurities, wherein the sintered body has a volume resistance of 10 Ω · cm or less, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N / mm ² or more. It is characterized by being.
(2) The method for producing a sputtering target of the present invention comprises a powder comprising an Si powder containing B or P and having an average particle size of 150 μm or less, and at least one metal element selected from Ni and Al, or the metal The silicite powder containing the elements is mixed and mixed so that the total of the Ni element and Al element is 0.5 to 10 at%, and the B or P content is 0.01 to 10,000 ppm by weight. It is characterized by sintering.
(3) The method for producing a sputtering target of the present invention comprises a powder comprising the Si powder having an average particle size of 150 μm or less, B powder or P powder, and at least one metal element selected from Ni and Al, or the metal element Are mixed and mixed so that the total of Ni element and Al element is 0.5 to 10 at%, and the content of B or P is 0.01 to 10000 ppm by weight. It is characterized by tying.
(4) A method for producing a sputtering target of the present invention comprises a powder comprising B or P and having an average particle size of 150 μm or less and at least one metal element selected from Ni and Al or the metal The element-containing silicite powder is mixed and mixed so that the total of Ni and Al elements is 0.5 to 10 at%, and the content of B or P is 0.01 to 10000 ppm by weight, and spray-fired It is characterized by tying.
(5) A method for producing a sputtering target according to the present invention comprises a powder composed of at least one metal element selected from Si powder having an average particle size of 150 μm or less, B powder or P powder, and Ni and Al, or the metal element. The silicite powder contained is mixed and mixed so that the total of Ni and Al elements is 0.5 to 10 at%, and the content of B or P is 0.1 to 20000 ppm by weight, followed by spraying and sintering. It is characterized by that.

As described above, the characteristics of the sputtering target of the present invention include at least one metal element selected from Ni and Al: 0.5 to 10 at%, and B or P: 0.01 to 10,000 ppm by weight. In the sintered body composed of Si and inevitable impurities, the volume resistance of the sintered body is 10 Ω · cm or less, the theoretical density ratio is 85% to 99%, and the bending strength is 65 N / mm ² or more. It is to be.

  By adding Ni or Al and B or P to Si, the resistance can be easily reduced. Furthermore, it is easy to improve the strength of the sputtering target, and even when Si is contained at 99.5 at%, the sputtering film forming speed can be improved even with a low addition amount, and at the time of machining, A sputtering target that does not break during sputtering can be manufactured. When the volume resistance of the sputtering target is high, it cannot be applied to direct current (DC) sputtering or intermediate frequency (MF) sputtering. If the bending strength of the sputtering target is insufficient, it is easy to break. When Ni or Al and B or P are added, the film forming rate is increased as compared with the sintered sputtering target of the prior art.

  On the other hand, if the content of the added Ni and Al elements is 0.5 at% or less, the effect of improving the bending strength and cracking resistance of the sputtering target cannot be obtained. On the other hand, if the content exceeds 10 at%, a large amount of silicite with the added metal element is formed in the target, so that the sputtering target is likely to be brittle. Further, during sputtering, abnormal discharge due to the silicite occurs. Incidence increases. When manufacturing by the powder sintering method or thermal spraying sintering method, if the content of Ni and Al contained in the sputtering target is increased, the added Ni and Al are easily oxidized, so the oxygen content in the target The amount increases, and abnormal discharge during sputtering increases. The Ni and Al metal elements contained in the sputtering target may be included as Ni or Al alone, and are an alloy of Ni and Al, a compound of Ni and Si, or a compound of Al and Si. May be. Furthermore, these metals, alloys, and silicites may contain B or P.

Furthermore, the sputtering target of the present invention is characterized in that B or P is contained in an amount of 0.01 to 10,000 ppm by weight. The resistance distribution becomes poor, and it is difficult to achieve uniform resistance reduction. On the other hand, when the content exceeds 10000 ppm by weight, the reaction between B or P and added metal elements (Ni, Al) increases, and the occurrence of abnormal discharge during sputtering and the strength of the sputtering target decrease. Is seen.
Furthermore, the volume resistance of the target of the present invention is 10 Ω · cm or less, the theoretical density ratio is 85% to 99%, and the bending strength is 65 N / mm ² or more. When the volume resistance of the sputtering target is high, it cannot be applied to direct current (DC) sputtering or intermediate frequency (MF) sputtering. In addition, since it is formed by a sintering method, the theoretical density ratio is likely to fluctuate depending on the sintering conditions. When it becomes 85% or less, abnormal discharge frequently occurs due to the dropping of Si particles during sputtering, and when it becomes 99% or more, the brittleness Increasing and cracking is likely to occur during high power sputtering.

  The characteristics of the method for producing a sputtering target of the present invention are as follows: 1) a powder comprising B or P and having an average particle size of 150 μm or less and at least one metal element selected from Ni and Al Silicite powder containing a metal element is mixed and mixed so that the total of Ni and Al elements is 0.5 to 10 at%, and the content of B or P is 0.01 to 10,000 ppm by weight. 2) Si powder having an average particle size of 150 μm or less, B powder or P powder, and powder comprising at least one metal element selected from Ni and Al or silicite containing the metal element Mixing and mixing the powder so that the total of Ni element and Al element is 0.5 to 10 at%, and the content of B or P is 0.01 to 10,000 ppm by weight, and pressure sintering. It is.

In the production of the sputtering target having the characteristics 1) and 2), powder sintering is performed by using Si powder doped with B or P, or a mixed powder of Si powder and B powder or P powder. The distribution of electrical resistance in the sputtering target can be made uniform. Moreover, by adopting this pressure powder sintering method, the target bending strength can be easily adjusted by selecting the sintering conditions, so by increasing the target bending strength, it is possible to suppress the occurrence of target cracking, Stability during high power density sputtering can be enhanced.
In the production method having the above feature 2), the “Si powder having an average particle size of 150 μm or less” may contain B or P. That is, while doping B or P into Si, it is possible to add B or P as a powder, and in this case, the total content of B or P becomes 0.01 to 10,000 ppm by weight. It only has to be.

  The sputtering target production method of the present invention is characterized by 3) a powder comprising B or P and having an average particle size of 150 μm or less and at least one metal element selected from Ni and Al. Alternatively, the silicite powder containing the metal element is mixed and mixed so that the total of Ni element and Al element is 0.5 to 10 at%, and the content of B or P is 0.01 to 10,000 ppm by weight. 4) Si powder having an average particle size of 150 μm or less, B powder or P powder, and powder comprising at least one metal element selected from Ni and Al, or a silica containing the metal element The site powder is mixed and mixed so that the total of Ni element and Al element is 0.5 to 10 at%, and the content of B or P is 0.1 to 20000 ppm by weight, followed by thermal spray sintering. That is.

In the manufacturing method having the features 3) and 4), since a refractory metal is not used, a sputtering target by a thermal spraying method can be manufactured. By using the thermal spraying method, it is possible to manufacture a sputtering target other than a flat plate, such as a cylindrical sputtering target. In addition, when adding B and P to a raw material powder as a single powder, since it evaporates remarkably at the high temperature in thermal spraying, it is necessary to add more B and P elements in the thermal spray raw material powder than a target target composition. On the other hand, Ni and Al have a higher deposition rate during thermal spraying than Si, and depending on the thermal spraying conditions, the Ni and Al contents in the target tend to be higher than the Ni and Al contents in the raw material powder.
In the production method having the feature 4), the “Si powder having an average particle size of 150 μm or less” may contain B or P. That is, it is possible to add B or P to Si and also add B or P as a powder.

As described above, the sputtering target according to the present invention contains at least one metal element selected from Ni and Al: 0.5 to 10 at%, and B or P: 0.01 to 10,000 ppm by weight, The balance is a sintered body made of Si and inevitable impurities, the sintered body has a volume resistance of 10 Ω · cm or less, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N / mm ² or more. Therefore, it eliminates the occurrence of cracks and cracks during machining for target fabrication, and also during high sputter power density direct current (DC) sputtering and intermediate frequency (MF) sputtering. Abnormal discharge can be reduced, and cracks and cracks can be eliminated. Therefore, when the sputtering target of the present invention is used, stability can be enhanced even in sputtering with a high sputtering power density, and high-speed film formation can be performed.

Further, the method for producing a sputtering target according to the present invention includes a powder comprising B or P and having an average particle size of 150 μm or less and at least one metal element selected from Ni and Al, or the metal element Are mixed and mixed so that the total of Ni element and Al element is 0.5 to 10 at%, and the content of B or P is a predetermined amount according to the sintering method, or Si powder having an average particle size of 150 μm or less, B powder or P powder, powder composed of at least one metal element selected from Ni and Al, or silicite powder containing the metal element, Ni element and Al element Are mixed and mixed so that the content of B or P is a predetermined amount according to the sintering method of pressure sintering or thermal spray sintering, Thermal spray sintering According to this production method, at least one metal element selected from Ni and Al: 0.5 to 10 at% and B or P: 0.01 to 10,000 ppm by weight is contained. The balance is made of Si and inevitable impurities, the volume resistance is 10 Ω · cm or less, the theoretical density ratio is in the range of 85% to 99%, and the bending strength is 65 N / mm ² or more. A sintered body can be obtained, and a sputtering target capable of stably performing high-speed film formation can be manufactured even in sputtering with a high sputtering power density.

It is the photograph of the target external appearance image | photographed after implementation of sputtering about the sputtering target of an Example. It is a photograph of the appearance of a target photoed after sputtering about a sputtering target of a comparative example.

  Next, the sputtering target of the present invention and the manufacturing method thereof will be specifically described below with reference to examples.

〔Example〕
First, in manufacturing a sputtering target, Si raw material, Ni raw material, Al raw material, and B powder for dope were prepared.
For the Si raw material, as shown in Table 1, each of the B-doped single crystal Si wafer, the B-doped polycrystalline Si block, the 6N purity polycrystalline Si block, the P-doped polycrystalline Si block, and the single-crystal Si block was ground. Si pulverized powders of Examples 1 to 15 were prepared as Si pulverized powders obtained in this manner. In addition, the volume resistance relating to the Si wafer and the Si block before pulverization used in each example is shown in the “Volume resistance (Ω · cm)” column of Table 1. In these pulverizations, after crushing into a coarse powder of about 1 mm using a jaw crusher, the powder was pulverized into a powder having a certain average particle diameter using a disk crusher. In order to prevent oxidation during pulverization, the pulverization process using a disk crusher was performed in an N ₂ atmosphere. The pulverized powder was classified with a sieve. For the average particle size of the powder after pulverization, the D50 particle size measured using Microtrac was used. The average particle diameter according to the Si pulverized powders of Examples 1 to 15 is shown in the “average pulverized powder particle diameter (μm)” column of Table 1.

  On the other hand, for Ni raw material and Al raw material, Ni powder, Ni silicite powder and Al powder having the average particle size shown in Table 2 are used, and B having the average particle size shown in Table 2 is used as the B dopant. Powder was used. The average particle diameters of Ni powder and Al powder were also measured in the same manner as in the case of the Si powder. In addition, since the oxygen management in Ni powder and Al powder is very important, the oxygen in raw material powder was measured and the thing with low oxygen content was selected.

  Next, the prepared Si pulverized powder, any one of Ni powder and Al powder, and, in some cases, B powder, have the addition amounts shown in the “addition amount (wt%)” column of Tables 1 and 2. As shown in the “Mixing method” column of Table 3, in the case of Examples 1, 2, and 13, the V-type mixer is used. In the case of Examples 3, 4, 14, and 15, the V-type mixer is used. A dry ball mill and, in the case of Examples 5-12, were mixed using a rocking mixer. The mixing time is shown in the “mixing time (hour)” column of Table 3. Here, since Al powder or the like has a risk of dust explosion, the above mixing should be performed in an inert gas, and it is necessary to avoid the occurrence of sparks due to static electricity in the handling of the powder after mixing. . In addition, when the content of each composition element except the B element of the mixed powder is measured by the ICP-MASS method, and the content of the B element is 2 ppm by weight or less, the ICP-MASS is 2 ppm by weight or more. In the case of, measurement was performed using ICP emission analysis. The results are shown in the column “Composition analysis of mixed powder” in Table 3.

  Hot press sintering (HP) of the mixed powders of Examples 1, 3 to 6 and 8 to 10 obtained above under the conditions (temperature increase rate, keep temperature, keep time, press pressure) shown in Table 4 Alternatively, a sintered body is obtained from hot isostatic pressing (HIP), and this sintered body is machined and then attached to a backing plate to produce the sputtering targets of Examples 1, 3-6, and 8-10. did. For the hot press sintering, the mixed powder was put in a graphite mold and pressed in a vacuum or in an inert atmosphere to perform hot press sintering. In addition, in the manufacturing method proposed by the said patent document 5, the non-pressurization temperature holding | maintenance of 1200-1300 degreeC is performed after sintering, and the residual stress is removed, but in a present Example, after this sintering No pressure keeping is performed.

Moreover, in the case of the mixed powders of Examples 2, 7, and 11 to 15, a sintered body was produced by a thermal spraying method. In this thermal spraying method, using a plasma spraying machine (Aeroplasma APS7100), an output of 120 kW is applied to the backing plate in one pass of 50 μm, and a thermal spraying film thickness of 5 mm is sintered on the backing plate. The body was created and the sputtering target of Example 2, 7, 11-15 was produced through the grinding process. During spraying, cooling water was passed through the back surface of the backing plate to suppress the temperature rise of both the sprayed film and the substrate. Thermal spraying was performed in an inert atmosphere.
About the sputtering target of the above Examples 1-15, after grind | pulverizing the produced sintered compact, a composition analysis measurement is performed by the ICP-MASS method or ICP light emission method similar to the above, The result is shown in "Target" of Table 5. Composition analysis "column.

[Comparative Example]
In order to compare with the above-described Example, sputtering targets of Comparative Examples 1 to 14 were prepared. The sputtering target of Comparative Example 1 is a single crystal Si plate, the sputtering targets of Comparative Examples 2 and 3 are B-doped polycrystalline Si plates, and the sputtering target of Comparative Example 4 is a polycrystalline Si plate. Using. In the case of Comparative Examples 5, 7 to 11, 13, and 14, a B-doped polycrystalline Si block having a volume resistance as shown in Table 1 was used as the Si raw material. Used a polycrystalline Si block and pulverized in the same manner as in the example to prepare a pulverized Si powder. In the case of Comparative Example 5, the mixed powder obtained by mixing this Si pulverized powder and Ni powder with a dry ball mill was hot press sintered, and in Comparative Examples 6 and 7, it was hot press sintered only with the Si pulverized powder. In the case of Comparative Example 8, a mixed powder obtained by mixing Si pulverized powder and Al powder with a rocking mixer was hot-press sintered. In Comparative Example 9, Si pulverized powder, Ni powder and Al powder were mixed. The mixed powders mixed with the rocking mixer were hot-press sintered to produce sputtering targets for evaluation. In the case of Comparative Example 10, W powder is used instead of the Ni raw material, and mixed with Si pulverized powder in a dry ball mill and hot press sintered. In the case of Comparative Example 11, instead of the Ni raw material, In addition, Mo powder was used, mixed with Si pulverized powder in a dry ball mill, and then spray-sintered to produce a sputtering target. For the sputtering target of Comparative Example 12, a pulverized Si powder prepared from a high-resistance polycrystalline Si block was used, mixed with Mo powder and B powder by a dry ball mill, and then sprayed and sintered.

  The result of the composition analysis of the mixed powder in the case of Comparative Examples 1 to 14 is shown in the “Composition Analysis of Mixed Powder” column in Table 3, and the sputtering target of Comparative Examples 1 to 14 is measured for dimensional density, after pulverization, Composition analysis measurement was performed by ICP-MASS method or ICP emission method, and the results are shown in the “Target composition analysis” column of Table 5.

  For the sputtering targets of Examples 1 to 15 and Comparative Examples 1 to 14 prepared above, the theoretical density ratio, the bending strength and the volume resistance (specific resistance) were measured, and the appearance after processing and bonding was further improved. Inspected.

<Measurement of theoretical density ratio>
The theoretical density ratio of the sputtering targets of Examples 1 to 15 and Comparative Examples 5 to 14 was determined by measuring the dimensional density of the sintered bodies of Examples 1 to 15 and Comparative Examples 5 to 14 that were produced. And the ratio of the theoretical density of the sintered body. The results are shown in the “Target theoretical density ratio (%)” column of Table 6. In addition, in the case of the sputtering target of Comparative Examples 1-4, since the single crystal or the polycrystal Si block is used, the theoretical density ratio was 100%.
Here, the theoretical density of the sintered body is calculated by the following equation.
Sintered body theoretical density = 100 / (a / A + b / B + c / C)
A: Density of Si single crystal a%: Weight ratio of Si element in sintered body B: Density of pure Ni (or W) metal b%: Weight ratio of Ni (or W) element in sintered body C: Density of pure Al (or Mo) metal c%: Weight ratio of Al (or Mo) element in the sintered body Note that since the amount of addition of B and P is small, this theoretical density is calculated. Is not included.

<Measurement of bending strength>
For the measurement of the bending strength, the sintered bodies of Examples 1 to 15 and Comparative Examples 5 to 14 obtained above were processed, and each sintered body had a size: 10 mm of size: 40 mm × 3 mm × 4 mm. Samples were prepared, and the three-point bending strength of these samples was measured according to JIS1601. The average value of 10 samples was taken as the measurement value of the bending strength. The measurement results are shown in the “Folding strength (N / mm ² )” column of Table 6.

<Measurement of volume resistance>
About the volume resistance (specific resistance) of each sputtering target of the Example produced above and a comparative example, it measured using the resistance measuring machine. If the volume resistance value is 1000 Ω · cm or less, use a resistance measuring machine Lorester made by Mitsubishi Gas Chemical Co., Ltd. If the volume resistance value is 1000 Ω · cm or more, make a resistance measuring machine Hirestar It was used.
The measurement results are shown in the “specific resistance (Ω · cm)” column of Table 6.
<Appearance after processing and bonding>
In the manufacturing process of the sputtering targets of Examples 1 to 15 and Comparative Examples 1 to 14 manufactured as described above, the occurrence of cracks and cracks is visually observed at the stage after machining and after being attached to the backing plate. Visual inspection was performed. The inspection results are shown in the column “Appearance after processing and bonding” in Table 6.

  Next, the sputtering targets of Examples 1 to 15 and Comparative Examples 1 to 14 prepared above were processed into samples of φ125 mm × thickness 5 mm, and a film formation test was performed. In this film formation test, direct current (indicated as “Ar only”), a mixed gas of Ar and oxygen (indicated as “Ar + oxygen”), and pure oxygen gas (indicated as “pure oxygen”) is subjected to direct current ( Sputtering film formation was performed using a DC power source (RPG-50 manufactured by MKS). The film formation rate during sputtering and the number of abnormal discharges were measured, and further, the target appearance after sputtering was inspected.

<Measurement of deposition rate>
Using the sputtering targets of Examples 1 to 15 and Comparative Examples 1 to 14 prepared above, sputtering was performed on the glass substrate under the conditions shown below. In the case of only Ar as the atmosphere gas for sputtering, Ar + In the case of oxygen, a Si film was formed separately for pure oxygen. In each case, the deposition rate was measured. In the case of Ar + oxygen, the Ar to oxygen volume ratio is Ar / oxygen = 1/1.
-Input power: DC1000W
-Target-substrate distance: 70 mm
・ Horizontal magnetic field: 2000 gauss ・ Substrate heating: None ・ Deposition time: 60 sec
・ Film thickness measurement method: Measured with a stylus type surface level meter ・ Film formation speed calculation: Film formation speed = (film thickness) / (film formation time)
The measurement results on the film forming side are shown in the “film forming rate (nm / sec)” column of Table 7. For the sputtering targets of Comparative Examples 1, 4, 6, 11, and 12, since DC sputtering could not be performed, the film formation rate was not measured, and “DC sputtering could not be performed” is shown in the table. ". Moreover, in the case of the comparative example 10, since abnormal discharge occurred frequently and the film-forming test could not be implemented, the film-forming speed was not measured.

<Measurement of abnormal discharge times>
Sputtering was performed in Ar + oxygen gas (Ar / oxygen = 1/1 volume ratio) under the conditions of an input power of 1250 W for 1 hour, and the number of occurrences of abnormal discharge (number of times / hour) was measured. The results are shown in the “abnormal discharge count (/ hour)” column of Table 7.

<Appearance of target after sputtering>
After performing sputtering for measuring the deposition rate and measuring the number of abnormal discharges of the sputtering targets of Examples 1 to 15 and Comparative Examples 1 to 14 prepared above, the sputtering chamber was opened, and the sputtering target in the chamber was visually checked. Was used to inspect the appearance of cracks and cracks. The inspection result is shown in the column “Appearance of target after sputtering” in Table 7. In addition, since DC sputtering could not be performed with the sputtering targets of Comparative Examples 1, 4, 6, 11, and 12, in Table 6, “DC sputtering could not be performed” was described, and the film formation rate and the number of abnormal discharges were measured. Did not do. In the case of Comparative Example 5, the target crack occurred during the sputtering film formation, and the sputtering film formation was stopped. In the case of Comparative Example 10, the abnormal discharge occurred frequently and the crack was generated. The test could not continue.
Here, for the sputtering target of Example 5, a photograph of the appearance of the target after sputtering is shown in FIG. 1, and for the sputtering target of Comparative Example 2, a photograph of the appearance of the target after sputtering is shown in FIG. In the case of the example of FIG. 1, cracks and cracks are not observed even after sputtering, and there is no abnormality, whereas in the case of the comparative example of FIG. 2, cracks occur after the sputtering. I understand that

According to the results shown in Table 6 and Table 7 above, the theoretical density ratio of each of the Si sputtering targets of Examples 1 to 15 is 85% to 85% by adding Ni or Al and B or P. 99%, the bending strength can be confirmed to be improved to 65 N / mm ² or more, and the volume resistance (specific resistance) is also 10 Ω · cm or less, and the resistance is reduced to such an extent that DC sputtering or MF sputtering is possible. It was shown that the target was not cracked or cracked in any of Examples 1 to 15 in the target manufacturing process. Furthermore, in sputtering film formation using the Si sputtering target of Examples 1 to 15, the addition of Ni or Al improved the film formation rate and reduced the number of occurrences of abnormal discharge. As a result, cracks and cracks did not appear on the appearance of the target after sputtering. In Examples 9 and 10, Ni silicite powder was added, but the same effect as when Ni powder was added was confirmed.

  On the other hand, in the case of Comparative Examples 1, 4, 6, and 12, since Ni or Al and B or P were not substantially added and the specific resistance was high, DC sputtering could not be performed. Even in Comparative Examples 2 and 3, Ni or Al was not added, abnormal discharge occurred frequently, and no cracks or cracks occurred during the production of the sputtering target, but cracks occurred after sputtering. . In the case of Comparative Example 5, the bending strength was low, cracking occurred during sputtering, and sputtering film formation was stopped. In Comparative Examples 7 and 9, the number of abnormal discharges was large and cracks occurred. In the case of Comparative Example 8, the bending strength was low and cracks were generated. In the case of Comparative Example 10, W powder was added, small cracks were observed after processing and bonding, and the number of abnormal discharges occurred frequently, so the film formation test was stopped. In the case of Comparative Examples 11 and 12, Mo powder was added and the target was manufactured by thermal spraying, but the bending strength was low, cracking and cracking were confirmed after processing and bonding, and sputtering could not be performed. It was. In Comparative Examples 13 and 14, the target theoretical density ratio and bending strength were low, abnormal discharge occurred frequently during sputtering, and cracks occurred.

As described above, in the sputtering target of this example, Si is the main component, and at least one metal element selected from Ni and Al: 0.5 to 10 at%, and B or P: 0.01 to 10,000. As a result, the volume resistivity is 10 Ω · cm or less, the theoretical density ratio is 85% to 99%, and the bending strength is 65 N / mm ² or more. It was confirmed that the bending strength of the target was increased to improve crack resistance, abnormal discharge during sputtering was reduced, and stable high-speed film formation was possible even in high-power sputtering.

Claims (5)

A sintered body containing at least one metal element selected from Ni and Al: 0.5 to 10 at% and B or P: 0.01 to 10,000 ppm by weight, with the balance being Si and inevitable impurities. There,
A sputtering target, wherein the sintered body has a volume resistance of 10 Ω · cm or less, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N / mm ² or more.   Si powder containing B or P having an average particle size of 150 μm or less, powder composed of at least one metal element selected from Ni and Al, or silicite powder containing the metal element, Ni element and Al A method for producing a sputtering target, comprising mixing and mixing so that the total amount of elements is 0.5 to 10 at% and the content of B or P is 0.01 to 10,000 ppm by weight, followed by pressure sintering .   Si powder having an average particle size of 150 μm or less, B powder or P powder, powder composed of at least one metal element selected from Ni and Al, or silicite powder containing the metal element, Ni element and Al element A method for producing a sputtering target, comprising mixing and mixing so that the total amount is 0.5 to 10 at% and the content of B or P is 0.01 to 10,000 ppm by weight, followed by pressure sintering.   Si powder containing B or P having an average particle size of 150 μm or less, powder composed of at least one metal element selected from Ni and Al, or silicite powder containing the metal element, Ni element and Al A method for producing a sputtering target, comprising mixing and mixing so that the total amount of elements is 0.5 to 10 at% and the content of B or P is 0.01 to 10,000 ppm by weight, and spray spray sintering.   Si powder having an average particle size of 150 μm or less, B powder or P powder, powder composed of at least one metal element selected from Ni and Al, or silicite powder containing the metal element, Ni element and Al element A method for producing a sputtering target, comprising mixing and mixing so that a total of 0.5 to 10 at% and a B or P content of 0.1 to 20000 ppm by weight are mixed and spray-sintered.