JP5726739B2 - 高効率有機発光素子およびその製造方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
2 第1電極
3 有機物層
4 第2電極
5 高屈折率層
6,7 光再活用パターン
Claims (8)
- 基板;前記基板上に位置した第1電極;前記第1電極上に位置した発光層を含む1層以上の有機物層;および前記有機物層上に位置した第2電極を含む有機発光素子であって、前記基板と前記第1電極の間に備えられた高屈折率層を含み、前記高屈折率層は光再活用パターンの一部を含み、前記光再活用パターンは、前記高屈折率層と基板の界面から前記高屈折率層および第1電極を貫通して前記有機物層と第1電極の界面まで延長した構造であり、前記光再活用パターンと前記高屈折率層の界面は前記基板に対して垂直であり、前記高屈折率層の屈折率は前記基板を構成する物質の屈折率よりも高く、前記光再活用パターンは、光の吸収および再発光パターンを含み、前記光の吸収および再発光パターンは、1種以上の蛍光性または燐光性物質を含み、
前記高屈折率層の高さaと前記光再活用パターンによって分割される高屈折率層の幅cの比であるa:cは0.01以上であることを特徴とする、有機発光素子。 - 前記基板および前記第1電極が光透過性を有する、請求項1に記載の有機発光素子。
- 前記光再活用パターンのパターン化された面積は全体面積の5%〜90%である、請求項1または2に記載の有機発光素子。
- 前記高屈折率層の屈折率は1.6以上である、請求項1または2に記載の有機発光素子。
- 前記高屈折率層の屈折率は1.65〜1.9である、請求項4に記載の有機発光素子。
- 前記高屈折率層の光透過率は80%以上である、請求項1または2に記載の有機発光素子。
- 前記光再活用パターンの幅bと前記光再活用パターンによって分割される高屈折率層の幅cの比であるb/cは2よりも小さい、請求項1または2に記載の有機発光素子。
- 前記基板の外側に蛍光性または燐光性物質を含む層をさらに含む、請求項1または2に記載の有機発光素子。
Applications Claiming Priority (3)
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KR10-2008-0093993 | 2008-09-25 | ||
KR20080093993 | 2008-09-25 | ||
PCT/KR2009/005511 WO2010036070A2 (ko) | 2008-09-25 | 2009-09-25 | 고효율 유기발광소자 및 이의 제조 방법 |
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JP2012503300A JP2012503300A (ja) | 2012-02-02 |
JP5726739B2 true JP5726739B2 (ja) | 2015-06-03 |
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JP2013242980A Pending JP2014060170A (ja) | 2008-09-25 | 2013-11-25 | 高効率有機発光素子およびその製造方法 |
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Country Status (6)
Country | Link |
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US (1) | US9722209B2 (ja) |
EP (1) | EP2334149B1 (ja) |
JP (2) | JP5726739B2 (ja) |
KR (3) | KR101182462B1 (ja) |
CN (1) | CN102165845B (ja) |
WO (1) | WO2010036070A2 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5726739B2 (ja) * | 2008-09-25 | 2015-06-03 | エルジー・ケム・リミテッド | 高効率有機発光素子およびその製造方法 |
KR101074804B1 (ko) * | 2009-11-24 | 2011-10-19 | 한국과학기술원 | 유기 발광 소자, 이를 포함하는 조명장치, 및 이를 포함하는 유기 발광 디스플레이 장치 |
JP2012022997A (ja) * | 2010-07-16 | 2012-02-02 | Jsr Corp | 発光素子および粒子含有層形成用組成物 |
KR101893355B1 (ko) | 2011-06-30 | 2018-10-05 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
TWI463717B (zh) * | 2011-07-29 | 2014-12-01 | Au Optronics Corp | 有機發光元件及其製造方法及使用其之照明裝置 |
CN102916135A (zh) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | 倒置型有机电致发光器件及其制备方法 |
JP5913938B2 (ja) * | 2011-11-30 | 2016-05-11 | 富士フイルム株式会社 | 光拡散性転写材料、光拡散層の形成方法、及び有機電界発光装置の製造方法 |
JP5919821B2 (ja) * | 2011-12-28 | 2016-05-18 | 大日本印刷株式会社 | 光学基板及びその製造方法並びに発光表示装置 |
JP6082907B2 (ja) * | 2012-02-17 | 2017-02-22 | 株式会社Joled | 表示装置及び表示装置の製造方法 |
KR101887082B1 (ko) | 2012-04-05 | 2018-08-13 | 한국전자통신연구원 | 유기발광다이오드 소자 및 그 제조 방법 |
KR102014827B1 (ko) * | 2012-06-12 | 2019-08-28 | 삼성디스플레이 주식회사 | 광학 필름 및 이를 포함하는 유기 전계 표시 장치 |
KR101942092B1 (ko) | 2012-07-30 | 2019-01-25 | 한국전자통신연구원 | 유기발광소자 제조방법 |
EP2863707A4 (en) * | 2012-09-13 | 2015-08-05 | Panasonic Ip Man Co Ltd | ORGANIC ELECTROLUMINESCENCE ELEMENT |
WO2014064834A1 (ja) * | 2012-10-26 | 2014-05-01 | パイオニア株式会社 | 発光装置及び発光装置の製造方法 |
US20150280173A1 (en) * | 2012-10-26 | 2015-10-01 | Pioneer Corporation | Light emitting device and manufacturing method of light emitting device |
KR102044923B1 (ko) * | 2013-04-15 | 2019-11-15 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그의 제조방법 |
KR101488660B1 (ko) * | 2013-08-14 | 2015-02-02 | 코닝정밀소재 주식회사 | 유기발광소자용 기판, 그 제조방법 및 이를 포함하는 유기발광소자 |
US10141378B2 (en) | 2013-10-30 | 2018-11-27 | Industrial Technology Research Institute | Light emitting device free of TFT and chiplet |
US20150144928A1 (en) * | 2013-11-26 | 2015-05-28 | The Regents Of The University Of Michigan | BURIED GRID FOR OUTCOUPLING WAVEGUIDED LIGHT IN OLEDs |
US20160322607A1 (en) * | 2013-12-27 | 2016-11-03 | Panasonic Intellectual Property Management Co. Ltd. | Light-emitting device |
TWI586012B (zh) * | 2014-01-02 | 2017-06-01 | 財團法人工業技術研究院 | 發光元件 |
CN105810834B (zh) * | 2014-12-29 | 2018-02-27 | 固安翌光科技有限公司 | 一种有机电致发光器件 |
US10038167B2 (en) | 2015-01-08 | 2018-07-31 | The Regents Of The University Of Michigan | Thick-ETL OLEDs with sub-ITO grids with improved outcoupling |
EP4071252A1 (en) | 2015-02-16 | 2022-10-12 | The Regents of the University of California | Microbial microfluidic biosensor |
CN104637988A (zh) * | 2015-03-11 | 2015-05-20 | 京东方科技集团股份有限公司 | Oled显示装置及其制备方法 |
US10663745B2 (en) | 2016-06-09 | 2020-05-26 | 3M Innovative Properties Company | Optical system |
JP2020511735A (ja) * | 2017-02-20 | 2020-04-16 | カティーバ, インコーポレイテッド | インクジェット印刷システムおよび発光要素の光出力効率を高める技術 |
CN107579166B (zh) | 2017-08-31 | 2024-04-12 | 京东方科技集团股份有限公司 | 显示面板、显示装置及显示面板制作方法 |
CN110518138B (zh) * | 2019-09-04 | 2021-12-07 | 淮阴工学院 | 一种像素结构有机发光二极管及其制备方法 |
CN111312795B (zh) * | 2020-04-02 | 2022-10-04 | 武汉华星光电半导体显示技术有限公司 | 显示装置、显示面板及其制作方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2838063B2 (ja) | 1995-09-20 | 1998-12-16 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
US6091195A (en) | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
JP2000268980A (ja) | 1999-03-19 | 2000-09-29 | Toyota Central Res & Dev Lab Inc | 有機電界発光素子 |
JP2003077680A (ja) | 2001-09-06 | 2003-03-14 | Konica Corp | 有機エレクトロルミネッセンス素子及び表示装置 |
KR100581850B1 (ko) * | 2002-02-27 | 2006-05-22 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치와 그 제조 방법 |
JP4226835B2 (ja) * | 2002-03-29 | 2009-02-18 | 三星エスディアイ株式会社 | 発光素子、その製造方法およびこれを用いた表示装置 |
JP4350996B2 (ja) | 2002-11-26 | 2009-10-28 | 日東電工株式会社 | 有機エレクトロルミネッセンス素子、面光源および表示装置 |
JP4822243B2 (ja) | 2003-03-25 | 2011-11-24 | 国立大学法人京都大学 | 発光素子及び有機エレクトロルミネセンス発光素子 |
KR20050121691A (ko) | 2003-03-25 | 2005-12-27 | 교또 다이가꾸 | 발광 소자 및 유기 일렉트로루미네선스 발광 소자 |
JP2004363049A (ja) * | 2003-06-06 | 2004-12-24 | Seiko Epson Corp | 有機エレクトロルミネッセンス表示装置の製造方法及び、有機エレクトロルミネッセンス表示装置並びに、有機エレクトロルミネッセンス表示装置を備える表示装置 |
JP4195352B2 (ja) | 2003-09-10 | 2008-12-10 | 三星エスディアイ株式会社 | 発光素子基板およびそれを用いた発光素子 |
JP5005164B2 (ja) * | 2004-03-03 | 2012-08-22 | 株式会社ジャパンディスプレイイースト | 発光素子,発光型表示装置及び照明装置 |
JP2005327522A (ja) | 2004-05-13 | 2005-11-24 | Nitto Denko Corp | エレクトロルミネッセンス素子と照明装置および表示装置 |
US7579775B2 (en) | 2004-12-11 | 2009-08-25 | Samsung Mobile Display Co., Ltd. | Electroluminescence display device with improved external light coupling efficiency and method of manufacturing the same |
JP4747626B2 (ja) | 2005-03-25 | 2011-08-17 | セイコーエプソン株式会社 | 発光装置 |
KR100665219B1 (ko) | 2005-07-14 | 2007-01-09 | 삼성전기주식회사 | 파장변환형 발광다이오드 패키지 |
JP2007080579A (ja) * | 2005-09-12 | 2007-03-29 | Toyota Industries Corp | 面発光装置 |
JP2007095326A (ja) | 2005-09-27 | 2007-04-12 | Dainippon Printing Co Ltd | 有機elディスプレイおよびその製造方法 |
JP2007129010A (ja) | 2005-11-02 | 2007-05-24 | Seiko Epson Corp | 面発光型半導体レーザ及びその製造方法 |
JP2007141736A (ja) | 2005-11-21 | 2007-06-07 | Fujifilm Corp | 有機電界発光素子 |
EP1830421A3 (en) | 2006-03-03 | 2012-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, manufacturing method of light emitting device, and sheet-like sealing material |
US7524746B2 (en) * | 2006-03-13 | 2009-04-28 | Evident Technologies, Inc. | High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor |
JP2007258113A (ja) | 2006-03-24 | 2007-10-04 | Toshiba Matsushita Display Technology Co Ltd | 発光装置 |
JP2008060038A (ja) | 2006-09-04 | 2008-03-13 | Fuji Electric Holdings Co Ltd | 有機発光デバイス |
JP2008108439A (ja) | 2006-10-23 | 2008-05-08 | Nec Lighting Ltd | 電界発光素子および電界発光パネル |
JP2008112592A (ja) | 2006-10-28 | 2008-05-15 | Aitesu:Kk | 微細構造を持つ有機el素子 |
JP5726739B2 (ja) * | 2008-09-25 | 2015-06-03 | エルジー・ケム・リミテッド | 高効率有機発光素子およびその製造方法 |
KR101068505B1 (ko) | 2011-05-17 | 2011-09-28 | 박은숙 | 리드와이어 성형장치 |
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KR101530748B1 (ko) | 2015-06-24 |
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EP2334149B1 (en) | 2015-06-03 |
EP2334149A4 (en) | 2012-07-11 |
US20110180836A1 (en) | 2011-07-28 |
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CN102165845A (zh) | 2011-08-24 |
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WO2010036070A2 (ko) | 2010-04-01 |
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