JP5794068B2 - 固体撮像素子および製造方法、並びに電子機器 - Google Patents
固体撮像素子および製造方法、並びに電子機器 Download PDFInfo
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Description
(1)
入射する光を電荷に変換する光電変換素子、および、前記光電変換素子により光電変換された電荷を一時的に保持する電荷保持部が形成された半導体基板と、
少なくとも前記半導体基板の前記光電変換素子および電荷保持部の間の領域に延在するように埋め込まれる埋め込み部を有する遮光部と
を備える固体撮像素子。
(2)
複数の配線が埋め込まれた配線層をさらに備え、
前記半導体基板に対して前記配線層が設けられる前記半導体基板の表面側に対して反対側となる裏面側から、前記光電変換素子に光が入射する
上記(1)に記載の固体撮像素子。
(3)
前記遮光部が有する埋め込み部は、前記光電変換素子および前記電荷保持部の周囲を囲うように形成される
上記(1)または(2)に記載の固体撮像素子。
(4)
前記遮光部は、前記光電変換素子に光が入射する側である前記半導体基板の裏面側において、少なくとも前記電荷保持部を覆うように配置される蓋部をさらに有する
上記(1)から(3)までのいずれかに記載の固体撮像素子。
(5)
前記遮光部の前記蓋部には、前記光電変換素子に対応する領域に開口部が形成されている
上記(4)に記載の固体撮像素子。
(6)
前記遮光部は、前記光電変換素子に光が入射する側に対して反対側となる前記半導体基板の表面側において、少なくとも前記電荷保持部を覆うように配置される表面側蓋部をさらに有する
上記(1)から(3)までのいずれかに記載の固体撮像素子。
(7)
前記遮光部の前記表面側蓋部には、前記光電変換素子に対応する領域に開口部が形成されている
(6)記載の固体撮像素子。
Claims (7)
- 入射する光を電荷に変換する光電変換素子、および、前記光電変換素子により光電変換された電荷を一時的に保持する電荷保持部が形成された半導体基板と、
少なくとも前記半導体基板の前記光電変換素子および電荷保持部の間の領域に延在するように埋め込まれる埋め込み部を有する遮光部と、
複数の配線が埋め込まれた配線層と
を備え、
前記半導体基板に対して前記配線層が設けられる前記半導体基板の表面側に対して反対側となる裏面側から、前記光電変換素子に光が入射し、
前記遮光部は、前記半導体基板の裏面側において、少なくとも前記電荷保持部を覆うように配置される蓋部をさらに有する
固体撮像素子。 - 前記遮光部が有する埋め込み部は、前記光電変換素子および前記電荷保持部の周囲を囲うように形成される
請求項1に記載の固体撮像素子。 - 前記遮光部の前記蓋部には、前記光電変換素子に対応する領域に開口部が形成されている
請求項1に記載の固体撮像素子。 - 前記遮光部は、前記光電変換素子に光が入射する側に対して反対側となる前記半導体基板の表面側において、少なくとも前記電荷保持部を覆うように配置される表面側蓋部をさらに有する
請求項1に記載の固体撮像素子。 - 前記遮光部の前記表面側蓋部には、前記光電変換素子に対応する領域に開口部が形成されている
請求項4に記載の固体撮像素子。 - 半導体基板に、入射する光を電荷に変換する光電変換素子、および、前記光電変換素子により光電変換された電荷を一時的に保持する電荷保持部を形成し、
少なくとも前記半導体基板の前記光電変換素子および電荷保持部の間の領域に延在するように埋め込まれる埋め込み部を有する遮光部を形成する
ステップを含み、
前記半導体基板に対して、複数の配線が埋め込まれた配線層が設けられる前記半導体基板の表面側に対して反対側となる裏面側から、前記光電変換素子に光が入射し、
前記遮光部は、前記半導体基板の裏面側において、少なくとも前記電荷保持部を覆うように配置される蓋部をさらに有する
固体撮像素子の製造方法。 - 入射する光を電荷に変換する光電変換素子、および、前記光電変換素子により光電変換された電荷を一時的に保持する電荷保持部が形成された半導体基板と、
少なくとも前記半導体基板の前記光電変換素子および電荷保持部の間の領域に延在するように埋め込まれる埋め込み部を有する遮光部と、
複数の配線が埋め込まれた配線層と
を有し、
前記半導体基板に対して前記配線層が設けられる前記半導体基板の表面側に対して反対側となる裏面側から、前記光電変換素子に光が入射し、
前記遮光部は、前記半導体基板の裏面側において、少なくとも前記電荷保持部を覆うように配置される蓋部をさらに有する
固体撮像素子を備える電子機器。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2011203337A JP5794068B2 (ja) | 2011-09-16 | 2011-09-16 | 固体撮像素子および製造方法、並びに電子機器 |
CN201210330054.5A CN103000644B (zh) | 2011-09-16 | 2012-09-07 | 固体摄像器件、固体摄像器件的制造方法和电子装置 |
US13/606,828 US8964081B2 (en) | 2011-09-16 | 2012-09-07 | Solid-state image sensor including a photoelectric conversion element, a charge retaining element, and a light shielding element, method for producing the same solid-state image sensor, and electronic apparatus including the same solid-state image sensor |
US14/593,616 US9659984B2 (en) | 2011-09-16 | 2015-01-09 | Solid-state image sensor including a photoelectric conversion element, a charge conversion element, and a light shielding element, method for producing the same solid-state image sensor, and electronic apparatus including the same solid-state image sensor |
US15/589,999 US10462404B2 (en) | 2011-09-16 | 2017-05-08 | Solid-state image sensor, method for producing solid-state image sensor, and electronic apparatus |
US16/582,203 US10944930B2 (en) | 2011-09-16 | 2019-09-25 | Solid-state image sensor with high-permittivity material film and a light shielding section, method for producing solid-state image sensor, and electronic apparatus |
US17/161,877 US11716555B2 (en) | 2011-09-16 | 2021-01-29 | Light detecting device |
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JP2011203337A JP5794068B2 (ja) | 2011-09-16 | 2011-09-16 | 固体撮像素子および製造方法、並びに電子機器 |
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Cited By (1)
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US11240452B2 (en) | 2017-05-24 | 2022-02-01 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic device including light-shielding film for suppression of light leakage to memory |
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US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
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JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
WO2013010127A2 (en) | 2011-07-13 | 2013-01-17 | Sionyx, Inc. | Biometric imaging devices and associated methods |
JP5794068B2 (ja) | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
KR102425587B1 (ko) * | 2013-03-29 | 2022-07-28 | 소니그룹주식회사 | 촬상 소자 및 촬상 장치 |
KR20140130969A (ko) * | 2013-05-02 | 2014-11-12 | 삼성전자주식회사 | 이미지 센서 및 이를 제조하는 방법 |
JP2015012059A (ja) * | 2013-06-27 | 2015-01-19 | ソニー株式会社 | 固体撮像素子及びその製造方法、並びに撮像装置 |
JP2015012126A (ja) * | 2013-06-28 | 2015-01-19 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
US8957490B2 (en) * | 2013-06-28 | 2015-02-17 | Infineon Technologies Dresden Gmbh | Silicon light trap devices |
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