JP5750281B2 - Vacuum integrated substrate processing apparatus and film forming method - Google Patents

Description

  The present invention relates to an integrated vacuum substrate processing apparatus and a film forming method, and more particularly to a multi-chamber type integrated vacuum substrate processing apparatus and a film forming method using the substrate processing apparatus.

When manufacturing a MEMS device, various film forming processes, for example, a metal layer (for example, wiring (electrode)) selected from a Ni film, an Al film, a Cr film, a Cu film, a Mo film, and a Ta film on a substrate. As an insulating layer selected from SiO ₂ film, Si ₃ N ₄ film, Al ₂ O ₃ film, and sacrificial layer selected from Mo film, W film, Si film, Ti film, a sputtering method, and formed using an etching method or the like, of the sacrificial layer in the shape of Risho Nozomu by the etching method, further subjected to a desired deposition has been carried out to obtain the desired product .

However, after the disappeared etching process on the use of xenon difluoride gas as an etchant, usually exposed to the atmosphere, and then for doing film forming process, resulting effect on the substrate due to atmospheric exposure, is the solution It was sought after.

Furthermore, as a deposition method after et etching, deposition methods such as various CVD methods have been used, as one of the film formation method, a plurality of raw material gas into the reaction chamber by supplying alternately on a substrate An ALD method, which is a method for forming various thin films, is known (for example, see Patent Document 1).

  In this ALD method, for example, two kinds of source gases are alternately supplied in a pulsed manner into a reaction chamber, and a film is formed on a substrate placed on a support stage in the reaction chamber by a reaction on the substrate surface. It is. That is, in a state where one kind of source gas is adsorbed on the substrate, by supplying another source gas that reacts with the source gas, the two source gases come into contact with each other and react to form a desired thin film. Form. At that time, after the raw material gas is adsorbed, the raw material gas that has not been adsorbed is discharged, then another raw material gas is supplied to react with the adsorbed raw material gas, and then the other raw material gas that has not reacted is discharged. This operation is repeated to form a thin film having a desired film thickness. The material of the source gas can be used in a solid, liquid, or gaseous state, and is usually supplied together with a carrier gas composed of an inert gas such as nitrogen or argon.

  Therefore, in a vacuum film forming apparatus that performs such an ALD method, a substrate support stage provided with a heating means is provided, and a source gas introduction means is usually disposed on the ceiling of the apparatus so as to face the stage. It is. For example, two kinds of source gases are supplied into the apparatus with a time lag through the gas introduction means, and one gas adsorption process and a reaction process between the adsorbed gas and the other gas are repeated, and predetermined An apparatus configured to form a thin film having a thickness of 2 mm is known (for example, see Patent Document 2).

  However, since such an ALD apparatus has a large volume and a large surface area inside the apparatus, the utilization efficiency of the raw material gas is low, and since it takes time to discharge the raw material gas after adsorption / reaction, the raw material gas There is a problem that the replacement efficiency of is low.

In the ALD apparatus, for example, a pressure adjusting valve and a vacuum pump are provided on the downstream side of the reaction chamber so that the inside of the apparatus can be set to a predetermined pressure. There is a problem that the adjusting valve and the vacuum pump are deteriorated. For example, when depositing aluminum oxide (Al ₂ O ₃ ), trimethylaluminum (TMA) and H ₂ O gas are used as source gases. Since this TMA is highly reactive, it is placed in a pressure regulating valve or a vacuum pump. There is also a problem that this product reacts with the moisture present, and this product forms a cause of failure and contamination of the pressure regulating valve and the vacuum pump.

JP 2008-010888 A JP 2003-318174 A

An object of the present invention is to solve the problems of the prior art described above, a vacuum consistent substrate in order to solve the problem of atmospheric exposure after et etching in particular, the ALD apparatus used to d etching apparatus followed In addition to the processing apparatus, the vacuum integrated substrate processing apparatus includes other vacuum film forming apparatuses and the like, and the reaction chamber of the vacuum film forming apparatus which is one of the ALD apparatuses constituting the vacuum integrated substrate processing apparatus. Reduce the volume and surface area of the reaction chamber to increase the use efficiency of the source gas, shorten the discharge time of the source gas after adsorption / reaction to increase the replacement efficiency of the source gas, and adhere to other than the substrate An integrated vacuum substrate processing apparatus equipped with a vacuum film forming apparatus that facilitates the processing of the thin film and further prevents deterioration of a pressure adjusting valve and a vacuum pump provided downstream of the reaction chamber, and this processing apparatus. It is to provide a film forming method had.

First vacuum consistent substrate processing apparatus of the present invention comprises a polygonal transfer chamber, and each of the respective sides of the polygon-connected load lock chamber, the heating chamber, et etching apparatus, and a vacuum deposition apparatus, Furthermore, a vacuum integrated substrate processing apparatus provided with an evacuation system, wherein the vacuum film forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsating manner, and is supported up and down provided in the reaction chamber. A vacuum film forming apparatus for forming a film by reaction of the source gas on a substrate placed on a stage, the outer chamber comprising an outer wall of the vacuum film forming apparatus and having an openable and closable top plate; The gas chamber is provided in a lower part of the outer chamber and is constituted by a dual structure chamber with an inner chamber which is a reaction chamber provided with an openable and closable top plate, and a gas nozzle for supplying the source gas into the inner chamber Parallel to substrate surface The trap is provided in the inner chamber, and the source gas discharge path in the inner chamber is a trap into which the source gas that has not contributed to the film formation is introduced. A trap for adjusting the pressure in the vacuum film-forming apparatus and a vacuum exhaust system are provided in this order on the downstream side of the trap, and are placed in the inner chamber. The film is formed on the substrate to be placed.

Second vacuum consistent substrate processing apparatus of the present invention, polygonal transfer chamber, and equipped with the respective sides of the polygon-connected load lock chamber, et etching apparatus, and a vacuum deposition apparatus, further evacuation A vacuum integrated substrate processing apparatus provided with a system, wherein the vacuum film-forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner on a vertically movable support stage provided in the reaction chamber. A vacuum film forming apparatus for forming a film by reaction of the raw material gas on a substrate to be placed, an outer chamber having an openable and closable top plate formed of an outer wall of the vacuum film forming apparatus, and an inside of the outer chamber A double-structured chamber consisting of an outer chamber with a top plate that can be opened and closed and an inner chamber that is a reaction chamber with a top plate that can be opened and closed. It is composed of A gas nozzle for supplying the source gas into the chamber is provided in the inner chamber so as to be parallel to the surface of the substrate, and the discharge path of the source gas in the inner chamber does not contribute to film formation. A trap into which the source gas is introduced, the trap having heating means provided therein, and a pressure adjusting unit for adjusting the pressure in the vacuum film forming apparatus on the downstream side of the trap A valve and an evacuation system are provided in this order, and the film is formed on the substrate placed in the inner chamber.

Third consistent vacuum substrate processing apparatus of the present invention comprises a polygonal transfer chamber, and each of the respective sides of the polygon-connected load lock chamber, the heating chamber, et etching apparatus, and a vacuum deposition apparatus, Furthermore, a vacuum integrated substrate processing apparatus provided with an evacuation system, wherein the vacuum film forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsating manner, and is supported up and down provided in the reaction chamber. A vacuum film forming apparatus for forming a film by reaction of the source gas on a substrate placed on a stage, the outer chamber comprising an outer wall of the vacuum film forming apparatus and having an openable and closable top plate; The gas chamber is provided in a lower part of the outer chamber and is constituted by a dual structure chamber with an inner chamber which is a reaction chamber provided with an openable and closable top plate, and a gas nozzle for supplying the source gas into the inner chamber Parallel to substrate surface So as to be provided on the inner chamber, characterized in that it is configured to be deposited on a substrate that is placed in the inner chamber.

Fourth consistent vacuum substrate processing apparatus of the present invention, polygonal transfer chamber, and equipped with the respective sides of the polygon-connected load lock chamber, et etching apparatus, and a vacuum deposition apparatus, further evacuation A vacuum integrated substrate processing apparatus provided with a system, wherein the vacuum film-forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner on a vertically movable support stage provided in the reaction chamber. A vacuum film forming apparatus for forming a film by reaction of the raw material gas on a substrate to be placed, an outer chamber having an openable and closable top plate formed of an outer wall of the vacuum film forming apparatus, and an inside of the outer chamber And a gas nozzle for supplying the source gas into the inner chamber is provided on the surface of the substrate. Parallel to Provided on the inner chamber becomes, characterized in that it is configured to be deposited on a substrate that is placed in the inner chamber.

In a fourth consistent vacuum substrate processing apparatus of the present invention, before disappeared etching apparatus, a vacuum etching apparatus having a reaction chamber, a gas introduction the reaction chamber, it is introduced into the chamber an etching gas at any pressure A substrate having a film to be processed, which is provided on a support stage provided in the reaction chamber, and having a gas discharge route for discharging the reaction product gas by etching in the reaction chamber and the remaining etching gas. In the above, by repeating the introduction of the etching gas into the reaction chamber and the discharge of the reaction product gas and the remaining etching gas in the reaction chamber, the film to be processed is reacted by the reaction between the etching gas and the film to be processed. An outer chamber configured to be etched and configured by an outer wall of the reaction chamber, and an inner chamber top plate member disposed so as to be movable up and down in the outer chamber There are, characterized by comprising a top plate member chamber inner constituting the chamber inner being lowered during the etching is an etching process chamber with the bottom plate of the outer chamber.

  In the vacuum film forming apparatus constituting the first to fourth vacuum integrated substrate processing apparatuses of the present invention, an upper deposition plate is provided on the inner wall surface of the top plate of the inner chamber, on the lower periphery of the gas nozzle and on the support stage. A lower protection plate is provided at a position facing the back surface of the substrate to be placed, and a side wall protection plate is provided on the side wall of the inner chamber.

  In the vacuum film forming apparatus constituting the first to fourth integrated vacuum substrate processing apparatuses of the present invention, the position facing the back surface of the substrate on which the lower deposition preventing plate is provided is the back surface periphery.

  In the vacuum film-forming apparatus constituting the first to fourth vacuum integrated substrate processing apparatuses of the present invention, a buffer for filling this source gas in the middle of a supply means for supplying at least one kind of gas among a plurality of source gases A tank is provided, and the raw material gas filled in the buffer tank is supplied from the gas nozzle into the inner chamber.

  In the vacuum film forming apparatus constituting the first to fourth integrated vacuum substrate processing apparatuses of the present invention, a buffer tank filled with this source gas is provided in the middle of each supply means for supplying each of the plurality of source gases. It is characterized by being configured to supply the source gas filled in each buffer tank into the inner chamber from the gas nozzle.

  In the vacuum film forming apparatus constituting the first to fourth integrated vacuum substrate processing apparatuses of the present invention, each of the plurality of source gases is composed of two kinds of source gases and supplies each of the first and second source gases. A buffer tank for filling the first and second source gases is provided in the middle of the means, and the gas filled in each buffer tank is supplied from the gas nozzle into the inner chamber. Features.

In the vacuum film forming apparatus constituting the first to fourth integrated vacuum substrate processing apparatuses of the present invention, the first source gas is trimethylaluminum gas and the second source gas is H ₂ O gas. To do.

  The vacuum film forming apparatus constituting the first to fourth integrated vacuum substrate processing apparatuses of the present invention is characterized by having a mechanism for opening and closing the respective top plates of the outer chamber and the inner chamber.

  The vacuum film forming apparatus constituting the first to fourth integrated vacuum substrate processing apparatuses of the present invention is characterized by having a mechanism for opening and closing each top plate of the outer chamber and the inner chamber by motor drive.

  The first to fourth integrated vacuum substrate processing apparatuses of the present invention are characterized by further comprising at least one selected from a plasma cleaning chamber or a gas cleaning chamber, a buffer chamber, and a sealing chamber.

Fifth consistent vacuum substrate processing apparatus of the present invention, polygonal transfer chamber, and equipped with the respective sides of the polygon-connected load lock chamber, et etching apparatus, and a vacuum deposition apparatus, further evacuation a consistent vacuum substrate processing apparatus having a system, diether etching apparatus, a vacuum etching apparatus having a reaction chamber, the reaction chamber, gas introduction paths and the introducing into chamber an etching gas at any pressure On a substrate provided with a film to be processed, which is mounted on a support stage provided in the reaction chamber, and a gas discharge path for discharging the reaction product gas by the etching gas in the reaction chamber and the remaining etching gas. by repeating the discharge of the etching grayed gas introduction and the reaction chamber of the reaction product gas and the remainder of the etching gas into the reaction chamber, the reaction of the etching gas and the processing film An outer chamber constituted by an outer wall of the reaction chamber, and a top plate member for an inner chamber disposed in the outer chamber so as to be movable up and down. And an inner chamber top plate member that constitutes an inner chamber that is an etching process chamber together with a bottom plate of the outer chamber, and the vacuum film forming apparatus alternately pulses a plurality of source gases. A vacuum film forming apparatus for forming a film by a reaction of the source gas on a substrate placed on a support stage that is movable up and down provided in the reaction chamber. A double-structured chamber consisting of an outer chamber with an openable and closable top plate and an inner chamber that is installed in the lower part of the outer chamber and is a reaction chamber with an openable and closable top plate A gas nozzle for supplying the source gas into the inner chamber is provided in the inner chamber so as to be parallel to the surface of the substrate, and an upper protection is provided on the inner wall surface of the top plate of the inner chamber. A lower deposition plate is provided at a position facing the lower periphery of the gas nozzle and the back surface of the substrate placed on the support stage, and a sidewall deposition plate is also provided on the side wall of the inner chamber. The source gas discharge path in the inner chamber is provided with a trap into which the source gas that has not contributed to film formation is introduced, and is provided with a heating means inside. Further, on the downstream side of the trap, a pressure adjusting valve for adjusting the pressure in the vacuum film forming apparatus and an evacuation system are provided in this order, and on the substrate placed in the inner chamber. To be deposited It is comprised by these.

  The fifth integrated-vacuum substrate processing apparatus of the present invention is characterized by further comprising at least one selected from a heating chamber, a plasma cleaning chamber or a gas cleaning chamber, a buffer chamber, and a sealing chamber.

The film forming method of the present invention is a film forming method using the first to fifth vacuum integrated substrate processing apparatuses described above, and a substrate on which a sacrificial layer is formed is etched through a polygonal vacuum transfer chamber. transported to etching the apparatus, by introducing a fluoride rare gas chamber, under vacuum, the sacrificial layer was d etching on the substrate, thus resulting substrate, a vacuum deposition apparatus via the vacuum transfer chamber The film is transferred into a reaction chamber constituting the film formation chamber, placed on a vertically movable support stage provided in the reaction chamber, and the first source gas and the second source gas are alternately pulsed in a reaction chamber. Supply, adsorption and discharge of the first source gas, supply of the second source gas, reaction between the adsorbed first source gas and second source gas, and second source gas It is composed of the outer wall of the vacuum film-forming apparatus when the film is formed on the substrate by repeatedly repeating the discharge. A substrate is placed on the support stage in the inner chamber, which is a reaction chamber equipped with an openable and closable top plate, and is installed in the lower part of the outer chamber. The first source gas and the second source gas are alternately supplied in pulses from the gas nozzle provided in the inner chamber so as to be parallel to the inner chamber. In this case, the first source gas and the second source gas are supplied to the respective buffers provided in the middle of the first and second source gas supply means. The gas stored in the tank is supplied from the gas nozzle into the inner chamber, and the first source gas and the second source gas that have not contributed to the film formation in the inner chamber are A tiger installed downstream of the inner chamber It is introduced into the flop, characterized by depositing with decomposition and heat-treated.

In the film forming method of the present invention, it is preferable that the first source gas is trimethylaluminum gas and the second source gas is H ₂ O gas.

  In the film forming method of the present invention, the sacrificial layer is preferably at least one layer selected from a Mo film, a W film, a Si film, and a Ti film.

According to the present invention, since the polygonal et etching apparatus was arranged around the transfer chamber and the vacuum deposition apparatus, and other devices available in vacuum, for example, when the MEMS device fabrication, after et etching step Since the film forming process by the next ALD method can be performed consistently in a vacuum without being exposed to the atmosphere, there is an effect that there is no influence on the substrate due to the exposure to the atmosphere.

A vacuum deposition apparatus used in the film deposition process by the ALD method after et etching is and the volume of the reaction chamber, the surface area of the reaction chamber portion is made smaller to increase the utilization efficiency of the raw material gas and In addition to shortening the discharge time of the raw material gas after the adsorption / reaction, it is possible to increase the replacement efficiency of the raw material gas, and it is possible to facilitate the processing of the thin film attached to other than the substrate.

  Further, by providing a trap in the gas discharge path of the vacuum film forming apparatus, it is possible to prevent the deterioration of the vacuum pump and the valve provided on the downstream side of the inner chamber as the reaction chamber.

It is a figure which shows typically the example of 1 arrangement | positioning, in order to demonstrate the vacuum consistent substrate processing apparatus of this invention. Is a diagram schematically showing one configuration example of a consistent vacuum substrate processing configuration to Rue etching apparatus device of the present invention, (a) is a cross-sectional view showing a state during substrate transfer, (b) the state at the time of etching the cross-sectional view showing a flowchart for explaining the operation of (c) is d etching apparatus. It is sectional drawing which shows typically the example of 1 structure of the vacuum film-forming apparatus which comprises the vacuum consistent substrate processing apparatus of this invention, and shows the state in film-forming operation. It is sectional drawing which shows typically one structural example of the vacuum film-forming apparatus which comprises the integrated vacuum substrate processing apparatus of this invention, and shows the state at the time of carrying in / out of a board | substrate. It is a block diagram which shows typically the structure of the adhesion prevention board provided in the inner chamber in the vacuum film-forming apparatus which comprises the integrated vacuum substrate processing apparatus of this invention, (a) is the sectional drawing, (b) is It is the top view, (c) is sectional drawing which shows another structure of the adhesion prevention board provided in an inner chamber. It is sectional drawing which shows typically the example of 1 structure of the trap in the vacuum film-forming apparatus which comprises the consistent vacuum substrate processing apparatus of this invention. A film forming system combining a vacuum film forming apparatus constituting the integrated vacuum substrate processing apparatus of the present invention and flow paths such as a first source gas and second source gas supply means and a discharge means (in the present invention, this system) Is a schematic diagram for explaining a source gas sequence supplied to a vacuum film forming apparatus as an example of a configuration. It is a flowchart which shows the gas sequence supplied to the inner chamber in the vacuum film-forming apparatus which comprises the consistent vacuum substrate processing apparatus of this invention. It is a flowchart explaining the film-forming process of this invention. It is a graph which shows the result of having observed the impurity layer of the contact surface of an aluminum oxide film and Ni film by Auger electron spectroscopy (AES).

  Embodiments of the present invention will be described below with reference to the drawings. First, an outline of the embodiment will be described, and then individual components will be described in detail. In the present invention, a vacuum film forming apparatus main body, and a film forming system in which the film forming apparatus main body includes a gas supply system or the like may be referred to as a film forming apparatus.

According to the first embodiment of the integrated vacuum substrate processing apparatus of the present invention, the processing apparatus includes a polygonal transfer chamber, a load lock chamber connected to each side of the polygon, a heating chamber , et etching apparatus, and includes a ALD deposition apparatus, further a consistent vacuum substrate processing apparatus comprising a vacuum evacuation system, ALD deposition apparatus by supplying a pulsed manner the reaction chamber a plurality of raw material gases are alternately, A vacuum film forming apparatus for forming a film by reaction of a raw material gas on a substrate placed on a vertically movable support stage provided in a reaction chamber, and is configured by an outer wall of the vacuum film forming apparatus. It is composed of a double-structured chamber consisting of an outer chamber with an inner chamber and a lower chamber inside the outer chamber, and an inner chamber that is a reaction chamber with an openable and closable top plate. Gasno to supply The trap is provided in the inner chamber so that the gas is parallel to the surface of the substrate, and the source gas that has not contributed to the film formation is introduced into the discharge path of the source gas in the inner chamber, A trap provided with heating means is provided inside, and a pressure adjusting valve and a vacuum exhaust system for adjusting the pressure in the vacuum film forming apparatus are provided in this order on the downstream side of the trap, Further, an upper deposition plate is provided on the inner wall surface of the top plate of the inner chamber, and a lower deposition plate is provided at a position facing the lower periphery of the gas nozzle and the back surface of the substrate placed on the support stage, respectively. Provided (for example, in the case of a lower deposition plate provided at a position opposite to the back surface of the substrate, the entire back surface of the substrate can be placed as a disk shape, and a hollow shape (donut shape) of the substrate) It is configured so that the peripheral portion of the surface can be placed, and the source gas only needs to be configured so as not to enter the back surface of the substrate.), And supply at least one kind of gas among the plurality of source gases A buffer tank for filling the raw material gas is provided in the middle of the supply means, and the raw material gas filled in the buffer tank is configured to be supplied from the gas nozzle into the inner chamber. A buffer tank for filling the source gas is provided in the middle of each supply means for supplying each gas, and the source gas filled in each buffer tank is supplied from the gas nozzle into the inner chamber. And a mechanism for opening and closing each top plate of the chamber and the inner chamber, preferably by motor drive. Preferably, it comprises at least one of a plasma cleaning chamber or gas cleaning chamber, a buffer chamber, and a sealing chamber.

In the first embodiment described above, before disappeared etching apparatus, a vacuum etching apparatus having a reaction chamber, the reaction chamber, a gas introduction path and the reaction chamber to be introduced into the chamber an etching gas in a gaseous state at any pressure And a gas discharge path for discharging the reaction product gas and the remaining etching gas from the etching of the substrate, and the substrate with the film to be processed placed on the support stage provided in the reaction chamber, It is configured to etch the film to be processed by the reaction between the etching gas and the film to be processed by repeating the introduction of the etching gas and the discharge of the reaction product gas in the reaction chamber and the remaining etching gas. the outer wall of the reaction chamber (i.e., side wall and top plate and bottom plate and) and the outer chamber is configured with a chamber for the top plate among which is vertically movably disposed in the outer chamber over This is an etching process chamber that is lowered by etching and brought into contact with the protruding portion at the lower peripheral edge of the top plate member and the bottom plate of the outer chamber and sealed through a sealing material such as an O-ring. And an inner chamber top plate member that defines the inner chamber. The use efficiency of the source gas can be increased by using a dual structure chamber composed of an outer chamber and an inner chamber.

  According to the second embodiment of the integrated vacuum substrate processing apparatus according to the present invention, this substrate processing apparatus does not include the heating device in the first embodiment as a component, and can process the substrate at room temperature. Device. Other constituent devices are as described in the first embodiment.

  According to the third embodiment of the integrated vacuum substrate processing apparatus of the present invention, this substrate processing apparatus does not include the trap in the first embodiment as a constituent element. This is as described in the first embodiment.

  According to the fourth embodiment of the integrated vacuum substrate processing apparatus of the present invention, this substrate processing apparatus does not include the heating device and the trap in the first embodiment as components, and the substrate is kept at room temperature. This is a device that can be processed, and the other components are the same as those described in the first embodiment.

  In the first to fourth embodiments of the integrated vacuum substrate processing apparatus according to the present invention, the transfer chamber of the substrate processing apparatus only needs to have a polygonal cross section. An arbitrary polygon may be used according to the number of each apparatus constituting the integrated vacuum substrate processing apparatus of the present invention, or there may be a side that is not connected as a certain polygon.

In the above first to fourth embodiment, when a plurality of raw material gas is a combination of trimethylaluminum gas and H _{2 O} gas, as in the first embodiment, trimethylaluminum gas and H _{2 O} gas Each buffer tank for filling the trimethylaluminum gas and H ₂ O gas is provided in the middle of each supply means, and the gas filled in each buffer tank is supplied from the gas nozzle into the inner chamber. Has been.

  The vacuum exhaust system in the first to fourth embodiments has a desired shape so that the polygonal transfer chamber and the processing chambers and processing apparatuses connected to the sides of the polygon can be evacuated to a desired pressure. All the processing chambers and processing apparatuses may be exhausted by a single vacuum exhaust system, or each processing chamber and processing apparatus may be exhausted by an independent vacuum exhaust system. The latter case is more efficient.

  The transfer chamber in the first to fourth embodiments may further include at least one selected from a plasma cleaning chamber or a gas cleaning chamber, a buffer chamber, and a sealing chamber.

Plasma cleaning chamber in the first to fourth embodiments, after the error etching, a radical which was generated by the plasma is a chamber for cleaning etch residues, it is sufficient that a known plasma cleaning device. In this case, H ₂ O gas, O ₂ gas, N ₂ gas, or the like can be used as the plasma forming gas. The gas screening chamber, after the e etching, a chamber for cleaning etch residues in a radical, it is sufficient that the known gas cleaning device. For the cleaning, either the plasma cleaning chamber or the gas cleaning chamber may be used.

  The buffer chamber in the first to fourth embodiments is a chamber for consistently connecting to a sealing apparatus that performs a sealing process after film formation using an ALD apparatus. Conventionally, after ALD film formation, the film is once taken out into the atmosphere and then transferred to the sealing device, or transferred to the sealing device via a transfer vessel.

  In the sealing chambers of the first to fourth embodiments, after film formation using an ALD apparatus, a device such as glass for sealing is bonded to the substrate on which the device is manufactured to seal the device. It is a chamber and should just consist of a well-known sealing device. For example, the sealing device described in Japanese Patent Application Laid-Open No. 2004-319264 and WO 2006/134863 may be used.

  The sealing device described in Japanese Patent Application Laid-Open No. 2004-319264 is inflated by introducing a predetermined fluid having a pressing surface having a pressing surface on a plane that can be brought into close contact with a predetermined sealing object and is movable. And a biasing portion configured to contact and pressurize the pressing portion (for example, a balloon-shaped biasing portion main body configured to expand upon introduction of compressed air). A stop mechanism is provided.

  A sealing device described in WO 2006/134863 republished publication includes a vacuum processing tank capable of introducing an inert gas for sealing, and a pair of sealing objects bonded with an ultraviolet curable resin in the vacuum processing tank. A transport mechanism for transporting from the vacuum processing tank and moving to the ultraviolet irradiation position; and an ultraviolet irradiation means for irradiating the ultraviolet curable resin of the sealing object transported from the vacuum processing tank with ultraviolet light. is there.

  The sealing device described in the republication publication of WO 2006/134863 is also configured to (a) place an object to be sealed on the transport mechanism and perform pressure bonding, and (b) Has a UV irradiation window and / or (c) a UV irradiation chamber in which ultraviolet irradiation means is arranged, and the object to be sealed unloaded from the vacuum processing tank is carried into the UV irradiation chamber. Then, it is configured to irradiate with ultraviolet rays.

  The sealing object is sealed through the following steps using the sealing device described in WO 2006/134863 republished publication. That is, in a vacuum and an inert gas atmosphere for sealing, a process of sealing a periphery of the sealing target portion by bonding a pair of sealing target objects with an ultraviolet curable resin, and moving the sealing target object having a sealed structure Then, the object to be sealed is sealed by a step of placing it under atmospheric pressure or pressurizing and irradiating the ultraviolet curable resin of the object to be sealed by irradiating it with ultraviolet rays. Further, in a vacuum and an inert gas atmosphere for sealing, a process of sealing a periphery of the sealing target portion by bonding a pair of sealing target objects with an ultraviolet curable resin, and moving the sealed target object having a sealed structure Then, the object to be sealed is sealed by the step of irradiating and curing the ultraviolet curable resin of the object to be sealed with ultraviolet rays.

As described above, alone due to be carried out in vacuum and d etching and ALD deposition, especially, the electrical characteristics and optical characteristics of the finally obtained devices is improved, the production yield of the display Improved. The cause is exactly unknown, by not contacting the atmosphere in the production process, as described later, the carbon content of the layer is reduced at the contact surface between the film by film and ALD deposition after et etching It is speculated that this may be due to a decrease in the reaction between moisture in the atmosphere and F-based compounds.

According to the embodiment of the film forming method according to the present invention, this film forming method is a film forming method using the vacuum integrated substrate processing apparatus according to the present invention, and includes a Ni film, an Al film, a Cr film, and a Cu film. At least one metal layer selected from Mo film and Ta film, at least one insulator layer selected from SiO ₂ film, Si ₃ N ₄ film, and Al ₂ O ₃ film, and Mo film, W film, Si film, and at least one substrate which the sacrificial layer is formed on the surface via transfer chamber polygon transported into et etching the device, fluoride rare gas chamber selected from Ti film by introducing and F ₂ etching gas such as gas, under vacuum, and d etching the sacrificial layer on the substrate, thus resulting substrate to form a film forming chamber of a vacuum deposition apparatus via the vacuum transfer chamber On the support stage that can be moved up and down in the reaction chamber. Placed, the first material gas (e.g., trimethyl aluminum gas) and the second source gas (e.g., H 2 _O gas) is supplied to the pulse to the reaction chamber in alternately and, the first source gas Supply, adsorption, and discharge, supply of the second source gas, reaction of the adsorbed first source gas and second source gas, and discharge of the second source gas are alternately repeated on the substrate. In the inner chamber, which is a reaction chamber with an openable and closable top plate, which is composed of the outer wall of the vacuum film formation apparatus and is installed in the lower part of the outer chamber with the openable and closable top plate. The substrate is placed on the support stage, and the first source gas and the second source gas are alternately supplied into the inner chamber from the gas nozzle provided in the inner chamber so as to be parallel to the surface of the substrate. These two gases react on the substrate by supplying in pulses. In this case, the supply of the first source gas and the second source gas is respectively stored in each buffer tank provided in the middle of the first and second source gas supply means. The first source gas and the second source gas that did not contribute to the film formation in the inner chamber were provided downstream of the inner chamber. The film is introduced into the trap, and the film is formed while being decomposed by heat treatment.

Examples of the source gas include a combination of trimethylaluminum and oxygen or ozone in addition to a combination of trimethylaluminum gas and H ₂ O gas.

  In order to make the support stage freely movable, a known lifting mechanism may be provided, for example, a lift may be provided on the lower surface of the stage.

  The substrate is not particularly limited, and generally any substrate that can be used in the ALD method, the CVD method, or the like can be used. The substrate may or may not be formed with a thin film.

  The vacuum film-forming apparatus in the integrated vacuum substrate processing apparatus of the present invention may be made of a material constituting the outer wall of a known ALD apparatus, and the top plate is configured to be opened and closed by a driving device such as a motor. .

  In the inner chamber, which is a reaction chamber, a plurality of source gases are alternately supplied in pulses to cause a reaction on the substrate placed in the inner chamber, thereby forming a thin film with a desired film thickness. The top plate of the inner chamber is configured to be openable and closable in the same manner as the top plate of the outer chamber. During maintenance of the vacuum film forming apparatus, the top plates of the outer chamber and the inner chamber are opened, It is possible to perform cleaning, replacement of the deposition prevention plate and gas nozzle, and the like. The top plate of the inner chamber is configured to be movable up and down so that the substrate can be transferred.

  As described above, the vacuum film forming apparatus constituting the integrated vacuum substrate processing apparatus of the present invention is constituted by the double-structure chamber composed of the outer chamber and the inner chamber, and thereby, the inner chamber which is a reaction chamber. The volume can be reduced, and for example, the distance between the bottom wall of the inner chamber and the top plate can be a distance of 2 mm or more and 1 cm or less.

  In the vacuum film forming apparatus constituting the integrated vacuum substrate processing apparatus of the present invention, the gas nozzles for supplying a plurality of source gases are provided in the inner chamber so that the gas introduction direction is parallel to the surface of the substrate. The shape of the nozzle is not particularly limited, and each source gas is configured to flow uniformly on the substrate.

  An upper deposition plate is provided on the inner wall surface of the top plate of the inner chamber, and a position facing the back surface of the substrate placed on the lower periphery of the gas nozzle and on the support stage (as described above, Each includes a peripheral edge), and a lower protective plate is provided, and a side wall protective plate is also provided on the side wall of the inner chamber. The deposition plate is provided to prevent the thin film generated by the reaction of the raw material gas from adhering to the inner wall of the inner chamber or the periphery of the gas nozzle. It is configured so that the protective plate can be replaced. It is only necessary to open and replace each top plate by driving a mechanism in which the top plates of the outer chamber and the inner chamber are opened and closed by a motor drive.

  Next, with reference to FIG. 1, the example of arrangement | positioning of each process chamber and processing apparatus of the vacuum integrated substrate processing apparatus of this invention is demonstrated.

  The vacuum integrated substrate processing apparatus (vacuum multi-chamber) shown in FIG. 1 has a transfer chamber 11 having a heptagonal cross section, and a transfer robot (not shown) is installed in the transfer chamber 11. This robot is configured so that the substrate can be carried into and out of each processing chamber in a vacuum system. Around the transfer chamber 11, first to sixth processing chambers 12 to 17 and a substrate loading / unloading chamber (load lock chamber) 18 are respectively connected via gate valves (not shown). ing. Each of these chambers is connected to an evacuation system (not shown) so that each chamber can be evacuated to set a desired pressure. Of course, all the chambers may be set to a desired pressure with one type of vacuum exhaust system.

The first to fifth processing chambers 12 to 16 are configured so that a thin film can be formed on the substrate surface or the thin film can be etched inside each of the first to fifth processing chambers 12 to 16. This is a place for heating the substrate to a predetermined temperature, and the substrate heated to the predetermined film forming temperature is transferred to the processing chambers 12 to 16 via the transfer chamber 11 and processed there. Processing chamber 12 to 17, for example, et etching apparatus 12, ALD apparatus 13, the plasma cleaning chamber 14, a buffer chamber 15, the gas cleaning chamber 16, and the processing chamber (heating chamber) 17. This heating chamber is unnecessary when the substrate is processed at room temperature.

The operation of forming a multilayer film on the substrate surface using the vacuum multi-chamber will be described below. Here, a description will be given vacuum deposition apparatus consisting et etching device 12 and the ALD apparatus 13 especially the (processing chamber) mainly.

  First, with all the gate valves closed, the inside of each processing chamber other than the load lock chamber (processing chamber) 18 is evacuated to a predetermined degree of vacuum. In this state, after the substrate is carried into the load lock chamber 18 and the inside of the load lock chamber 18 is evacuated to a predetermined degree of vacuum, the gate valve between the load lock chamber 18 and the transfer chamber 11 is opened, and the transfer robot is opened. Then, the substrate on which the predetermined film is formed is put into the transfer chamber 11.

Next, the gate valve between the transfer chamber 11 and the first processing chamber der Rue etching apparatus 12, the substrate is placed d etching apparatus 12 by the transport robot to place the substrate at a predetermined position. Then, close the gate valve between the d etching device 12 and the transfer chamber 11, the etching process is performed in the thin film d etching apparatus 12 in Dee etching. After the processing is completed, the gate valve between the d etching device 12 and the transfer chamber 11, the substrate processed in the transfer robot taken out of e etching apparatus 12 to the transfer chamber 11, et etching apparatus 12 and the transfer chamber 11 close the gate valve.

  Next, the gate valve between the ALD apparatus 13 serving as the second processing chamber and the transfer chamber 11 is opened, and the substrate is carried into the ALD apparatus 13 in the same manner as described above, and a thin film is formed by the ALD method. . Thereafter, the substrate is transferred from the ALD apparatus 13 into the transfer chamber 11, the gate valve between the transfer chamber 11 and the load lock chamber 18 is opened, and the substrate formed using the transfer robot is transferred into the load lock chamber 18. Then, the gate valve between the load lock chamber 18 and the transfer chamber 11 is closed and the inside of the load lock chamber 18 is brought to an atmospheric pressure atmosphere, and then the substrate formed from the load lock chamber 18 is taken out of the apparatus. Through the above steps, predetermined film formation can be performed on the substrate surface in a consistent vacuum atmosphere. In this case, if a sealing device is connected to the vacuum multi-chamber, the substrate transferred from the ALD device 13 into the transfer chamber 11 is transferred by opening the gate valve between the transfer chamber 11 and the sealing device. The substrate formed by the robot is transferred into the sealing device, and a sealing process is performed. Thereafter, the substrate is put into the load lock chamber 18 as described above, and then taken out from the device.

Next, et etching device 12 and the ALD apparatus 13 described above will be described in detail with reference to the accompanying drawings.

Et etching apparatus, as shown in FIG. 2 (a) and (b), a vacuum etching apparatus having a reaction chamber 2, the reaction chamber 2, an etching gas in a gaseous state into the reaction chamber 2 at any pressure A substrate support provided in the reaction chamber 2 having a gas introduction path (not shown) to be introduced and a gas discharge path (not shown) for discharging reaction product gas and residual etching gas by etching in the reaction chamber on a substrate having a target film to be placed on the stage 21, by repeating the discharge of etching grayed gas inlet and the reaction chamber of the reaction product gas and the remainder of the etching gas into the reaction chamber 2, etching The outer chamber is configured to etch the processed film by the reaction between the gas and the processed film, and is configured by the outer walls (side wall 22a, top plate 22b, and bottom plate 22c) of the reaction chamber 2. 2 and a top plate member 23a for the inner chamber, which is disposed in the outer chamber 22 so as to be movable up and down, and is lowered during the etching, so that the projecting portion 23b at the lower peripheral edge of the top plate member and the bottom plate of the outer chamber 22 The inner chamber top plate member 23a is formed so as to be in contact with 22c, sealed with a sealing material such as an O-ring, and defining the inner chamber 23 as an etching processing chamber.

  In the above description, the example in which the protruding portion 23b is provided at the lower end of the peripheral edge of the ceiling member has been described. However, the protruding portion may be provided at a predetermined position of the bottom plate 22c to define the inner chamber 23. That is, it is only necessary that the inner chamber 23 can be defined by the top plate member 23a and the bottom plate 22c. The etching gas is introduced through a shower head (not shown) installed on the top plate member 23 a of the inner chamber 23, and the mechanism for raising and lowering the top plate member 23 a is a lower part of the reaction chamber 2. Is provided.

Shown to d etching apparatus in FIG. 2 (a) and (b) as long as it has a double structure chamber consisting of an outer chamber and an inner chamber as described above, it is possible to enhance the utilization efficiency of the material gas Therefore, regardless of the structure, for example, a structure such as an outer chamber 31 and an inner chamber 32 in a vacuum film forming apparatus (ALD apparatus) shown in FIGS. In this case, the top plate of the inner chamber is raised and lowered by a driving mechanism provided at the lower part of the film forming apparatus.

  FIG. 2A shows a state of arrangement of main members in the outer chamber 22 when the substrate to be processed is transported / unloaded before etching or after completion of etching. That is, before etching, the inner chamber top plate member 23 a is raised by the elevating mechanism, and is disposed above the outer chamber 22. A substrate to be processed in the load lock chamber is transferred from the substrate transfer / outlet 25 into the outer chamber 22 via the gate valve 24 by a robot (not shown), placed on the substrate support stage 21, and positioned. Next, the top plate member 23a for the inner chamber is lowered by an elevating mechanism for etching, and the inner chamber 23 is configured as described below with reference to FIG. 2 (b), and an etching gas is installed on the top plate member 23a. Etching is performed by introducing into the inner chamber 23 through a showerhead. After the etching is completed, the top plate member 23a is raised by the elevating mechanism, and the remaining etching gas and etching products are discharged by a vacuum exhaust system (not shown). Thereafter, as shown in FIG. 2B, the inner chamber 23 is formed, and the etching process is repeated.

  FIG. 2B shows a state of arrangement of the outer chamber 22 and the inner chamber 23 at the time of etching. That is, the top plate member 23a for the inner chamber is lowered by an elevating mechanism, and a sealing material (for example, an O-ring or the like) is formed between the lower peripheral edge (protruded portion) 23b of the top plate member 23a and the bottom plate 22c of the outer chamber 22. The inner chamber 23 is formed by performing the etching. Although the gas introduction path is not shown, it may be provided so that the etching gas can be introduced into the inner chamber 23 as described above. In addition, the inside of the outer chamber 22 and the inner chamber 23 is set to a predetermined pressure by an evacuation system (not shown).

Using upper disappeared etching apparatus will be described with reference to FIG. 2 (c) the operation when carrying out the etching process.

As shown in FIG. 2 (c), the outer chamber 22 and inner chamber 23 of FIG. 2 (a) and reference in the reaction chamber 2 described with the (b), respectively, inert gas (eg, N ₂ Gas, Ar gas, etc.) introduction paths, vacuum exhaust systems and etching gas introduction paths are connected. That is, a vacuum pump is connected to the outer chamber 22 via valves 22f and 22d, and the inside of the chamber can be evacuated, and a path for introducing N ₂ gas or the like is connected via the valve 22e. It is connected. In addition, a vacuum pump is connected to the inner chamber 23 via a valve 23c so that the inside of the chamber can be evacuated, and via the first buffer tank 26 and the valve 26a via the valve 23d. The etching gas (for example, xenon difluoride) tank 28 is connected in this order via the second buffer tank 27 and the valve 27a. This etching gas tank is provided with a heating means, and is configured so that a solid etching gas raw material (for example, powdery xenon difluoride) can be sublimated. A path for introducing N ₂ gas or the like is connected to the first and second buffer tanks 26 and 27 via valves 26c and 27c, respectively. Each of the outer chamber 22, the inner chamber 23, the first buffer tank 26, and the second buffer tank 27 includes a pressure gauge (not shown) so that the internal pressure can be monitored.

  After the inside of the inner chamber 23 is set to a predetermined pressure by a vacuum exhaust system, etching is performed by performing the following steps.

  (1) Open the valve 27a, fill the second buffer tank 27 with the etching gas sublimated from the etching gas tank, and then close the valve 27a.

  (2) Open the valve 26a and fill the first buffer tank with an etching gas. At this time, the pressure in the first buffer tank 26 and the pressure in the second buffer tank 27 are in an equilibrium state. Thereafter, the valve 26a is closed.

  (3) Open the valve 23 d and introduce an etching gas into the inner chamber 23. At this time, the etching gas is introduced into the inner chamber by the differential pressure between the first buffer tank 26 and the inner chamber 23, and the pressure is in an equilibrium state. At this time, the valve 23c is closed.

  (4) The valve 23d is closed and the etching is performed for a certain period of time with the etching gas stored in the inner chamber 23. An isotropic etching is performed by a chemical reaction between the etching gas and the substance of the film component on the surface of the substrate to be processed. During this etching, the valve 27a is opened and the second buffer tank 27 is filled with an etching gas for the next etching process.

  (5) Next, the valve 23c is opened to evacuate the inner chamber 23, and the etching process is completed. Thereafter, the process steps (2) to (5) are repeated a predetermined number of times to remove the film to be processed.

The relationship among the volumes of the inner chamber 23, the first buffer tank 26, and the second buffer tank 27 is set so as to satisfy the following formula, and the amount of etching gas supplied into the inner chamber 23 (Pressure) can be secured.
Volume of inner chamber = volume of first buffer tank <volume of second buffer tank

  Next, with respect to the ALD apparatus having a dual-structure chamber, which is the above-described vacuum film forming apparatus, FIGS. 3 and 4 which are schematic diagrams showing an outline of a side cross section of the vacuum film forming apparatus, and a deposition plate provided in the inner chamber The configuration will be described with reference to FIGS. 5A and 5B which are a cross-sectional view and a plan view schematically showing the configuration. FIG. 3 shows the state of the vacuum film forming apparatus during the film forming operation, and FIG. 4 shows the state of the vacuum film forming apparatus when the substrate is carried in and out. In these figures, the same components have the same reference numerals.

  3 and 4, the vacuum film-forming apparatus 3 includes an outer chamber 31 constituted by the outer wall, an inner chamber (reaction chamber) 32 installed in a lower portion inside the chamber, and a side wall of the outer chamber 31. And a transfer chamber 34 for the substrate S provided through a gate valve 33. The vacuum film forming apparatus 3 includes a drive mechanism (not shown) such as a motor for opening and closing the top plates 31a and 32a of the outer chamber 31 and the inner chamber 32, respectively.

  The inner chamber 32 is composed of a top plate 32a and a bottom wall 32b, and the interval between the top plate 32a and the bottom wall 32b may be within a range in which a reaction occurs, and unnecessary gas discharge efficiency in the inner chamber is achieved. From this point, it is preferable to make it as small as possible. Since the vacuum film forming apparatus 3 has a double structure, the volume of the reaction chamber (inner chamber) 32 can be reduced, and the inner surface area thereof can be reduced.

  The top plate 32 a of the inner chamber 32 is configured to be movable up and down. The top plate 32 a rises into the space above the inner chamber 32 in the outer chamber 31, and the substrate S is transferred from the transfer chamber 34 into the inner chamber 32. It is comprised so that it can carry in and out. After loading the substrate S into the inner chamber 32 and placing it on the support member 36, the top plate 32a is lowered and closed, and the gas nozzle 35 is passed through a plurality of source gas supply means (not shown). The raw material gases are alternately supplied in pulses to the inner chamber 32. The shape of the gas nozzle is not particularly limited as long as each source gas is uniformly supplied to the surface of the substrate S.

Vacuum film forming apparatus shown in FIG. 3 and 4, as long as it has a double structure chamber consisting of an outer chamber and an inner chamber as described above, the structure is not limited, for example, are shown in FIG. 2 described above it may have a structure such as an outer chamber and an inner chamber in the e etching apparatus. In this case, the top plate member of the inner chamber is moved up and down by a driving mechanism provided on the upper part of the film forming apparatus.

  As shown in FIGS. 5A and 5B, the inner chamber 32 shown in FIG. 3 has an upper protection plate 37, lower protection plates 38 and 39, and side wall protection inside the top plate 32a. A landing plate 40 is fixed by a bolt or the like. The upper protective plate 37 may be a single plate or may be divided. In the case of the divided plate, as shown in FIG. It may be divided into an adhesion plate 37a and an upper adhesion prevention plate 37b provided in the upper part around the nozzle. The reason why the protection plate is divided is that dirt (film adhesion) around the gas nozzle is particularly severe and a thick film is easily formed, so that only the protection plate around the gas nozzle can be replaced. The lower deposition preventing plate 38 is provided around the gas nozzle and on the bottom wall 32b of the inner chamber 32, and the lower deposition preventing plate 39 faces the back surface of the substrate S placed in the inner chamber 32. It is provided at a position, has a donut shape in which the central portion is hollowed out, and is provided at the peripheral portion of the back surface of the substrate and in the vicinity thereof. Since the source gas wraps around the back surface of the substrate S and the periphery of the back surface is likely to become dirty, the lower deposition plate 39 is provided. It is preferable that the lower adhesion-preventing plates 38 and 39 also have a structure that can be replaced independently. Furthermore, it is preferable that the gas nozzle 35 itself has a structure that can be replaced independently. The lower deposition preventing plate 38 also has a structure in which the central portion is cut out.

  The substrate S is placed on a support member (lift) 36 as a support stage, and is placed on the bottom wall 32b of the inner chamber 32 during the film forming process, and the substrate S is transported after the film forming process is completed. In doing so, the support member 36 is raised along with the rise of the top plate 32 a so that the substrate can be transferred to the transfer chamber 34.

  Although not shown, the vacuum film forming apparatus 3 is configured so that heating means such as a heater is embedded in the top plate 32a and / or the bottom wall 32b of the inner chamber 32 so that the temperature of the substrate can be set. Yes.

  A buffer tank (not shown) provided in the middle of the supply means for supplying at least one of the source gases supplied into the inner chamber 32 is used in one cycle filled in the buffer tank. A fixed amount of source gas is supplied from the gas nozzle 35 into the inner chamber. A certain amount of source gas can be supplied in an equal amount with good reproducibility, so that the utilization efficiency of the source gas is high. Further, since the buffer tank is a simple container, there is an advantage that there are few failures. A vacuum gauge for monitoring the amount of source gas supplied to the buffer tank is provided on the upstream side of the buffer tank.

For example, when the plurality of source gases are a combination of trimethylaluminum gas and H ₂ O gas, a buffer tank for filling the trimethylaluminum gas is provided in the middle of the supply means for supplying the trimethylaluminum gas. The gas filled therein is supplied from the gas nozzle into the inner chamber 32. The same applies to H ₂ O gas.

  When the buffer tank as described above is not used, for example, when the supply amount of the source gas is controlled only by a valve, the time required for opening and closing the valve affects the supply amount of the source gas to the inner chamber 32. There is a problem of giving. In addition, if the structure is such that the supply amount of the raw material gas is controlled only by the mass flow controller, there are many problems with the mass flow controller, and a part of the raw material gas needs to be discharged outside the system to stabilize the flow rate. There is also a problem that the utilization efficiency of the raw material gas is deteriorated. However, as in the present invention, if a structure is used in which the source gas is supplied to the inner chamber using a buffer tank, there is no problem that occurs when only the above-described valve or only the mass flow controller is used.

  Instead of the lower protective plate 39 shown in FIG. 5 (a), a lower protective plate 41 shown in FIG. 5 (c) may be provided. In FIG. 5C, the gas nozzle 35, the upper deposition plate 37 (37a, 37b), the lower deposition plate 38, the sidewall deposition plate 40, and the substrate S are shown in relation to FIG. 5A. Is the same. The lower deposition protection plate 41 is provided at a position facing the entire back surface of the substrate S placed in the inner chamber 32 (which may be the same as the substrate size or larger than the substrate size). It has a disk-shaped structure in which the central portion is not hollowed out. It is preferable that the lower adhesion-preventing plate 41 has a structure that can be replaced independently.

  According to the vacuum film forming apparatus in the first to second embodiments of the integrated vacuum substrate processing apparatus according to the present invention, the source gas that has not contributed to the film formation in the gas discharge path existing in the inner chamber. A trap is provided in which is introduced. An exhaust system including a pressure adjusting valve and a vacuum pump for adjusting the pressure in the vacuum film forming apparatus is provided in this order on the downstream side of the trap.

  The pressure adjusting valve controls, for example, the pressure in the inner chamber and corresponds to a change in trap conductance.

As described above, the operation of the motors attached to the top plates 31a and 32a of the outer chamber 31 and the inner chamber 32 is as follows.
-When conveying the object to be processed: Only the inner chamber 32 is opened and closed, and the heating means such as a heater is kept ON. Before the inner chamber 32 is opened, the inside of the inner chamber 32 is purged.
During maintenance: Turn off the heating means such as a heater, then open the inner chamber 32, purge the inside of the outer chamber 31, and then open the outer chamber 31.

  The trap will be described below with reference to FIG. 6 showing a typical configuration example of the trap. For the description of the components other than the trap, the reference numerals of the components shown in FIG. 3 are used.

  The shape of the trap 61 is not particularly limited, and the trap 61 may be configured to decompose and discharge the first source gas (for example, trimethylaluminum gas) and the second source gas discharged from the inner chamber 32 in the trap 61. Good. The trap 61 includes a cylindrical outer cylinder member 62, a gas inlet 63 through which the first source gas and the second source gas discharged from the inner chamber 32 are introduced, an outlet 64, and a bottom member 65. Consists of. Inside the cylindrical outer cylinder member 62, a cylindrical inner cylinder member 66 is fixed and provided so as not to directly contact the bottom member 65. Heating means 67 such as a heater is provided inside the inner cylinder member 66. The heating means 67 is not limited in its structure and arrangement as long as the heating means 67 is configured to efficiently thermally decompose the source gas such as trimethylaluminum gas introduced into the trap 61. A filter may be provided on the upstream side of the discharge port 64, and the discharge port 64 is connected to a vacuum pump via a pressure adjusting valve.

In the trap 61, as shown by an arrow A in FIG. 6, the first source gas and the second source gas discharged from the inner chamber 32 are alternately introduced into the outer cylinder member 62 from the gas inlet 63. Subsequently, the gas is introduced into the inner cylinder member 66 through a path formed between the outer cylinder member 62 and the inner cylinder member 66. The gas introduced into the inner cylinder member 66 contacts the heating means 67 maintained at a predetermined temperature and is thermally decomposed. For example, in the case of trimethylaluminum gas, aluminum carbide (AlC _x ) is formed and deposited. .

  Next, as a structural example in which the vacuum film forming apparatus shown in FIGS. 3 and 4 is combined with the first source gas and second source gas supply means and the discharge means, the source gas supplied to the vacuum film formation apparatus The sequence will be described in detail with reference to FIG. In FIG. 7, the same components as those in FIGS. 3, 4, 5, and 6 are denoted by the same reference numerals, and will be described using the reference numerals in FIGS.

  In FIG. 7, the vacuum film forming apparatus 3 includes an inner chamber 32 provided with a support stage on which the substrate S is placed, as shown in FIG. Yes. A first gas supply system 71 that supplies a first source gas and a second gas supply system 72 that supplies a second source gas are connected to the bottom wall 32 b of the inner chamber 32.

  The first gas supply system 71 is a gas supply system for connecting the first source gas container (source gas supply source) 71a containing the source of the first source gas and the inner chamber 32, and in order from the upstream side, A valve 71b, a valve 71c, a buffer tank 71d filled with the first source gas, and a valve 71e are connected, and a backflow prevention valve (not shown) is connected between the valve 71e and the inner chamber 32 as necessary. May be provided. Further, a vacuum gauge for monitoring the supply amount of the first source gas to the buffer tank 71d is provided on the upstream side of the buffer tank 71d. In this case, the first source gas container 71a and the second source gas container 72a include a device (not shown) such as a vaporizer that gasifies the raw material when the raw material to be used is solid or liquid. Yes.

  In relation to the first gas supply system 71, an inert gas supply system 73 such as nitrogen or argon used as a carrier gas for the first source gas supplies the first source gas to the inner chamber 32 via the valve 71e. Connected to the supply path. In the inert gas supply system 73, a valve 73b, a mass flow controller 73c for adjusting the flow rate of the inert gas, and a valve 73d are connected between the inert gas source 73a and the inner chamber 32 in order from the upstream side. ing.

  The second gas supply system 72 is a supply system that connects the second source gas container 72a containing the source material of the second source gas and the inner chamber 32, and in order from the upstream side, the valve 72b, the valve 72c, A buffer tank 72d filled with two source gases and a valve 72e are connected.

  In relation to the second gas supply system 72, an inert gas supply system 74 such as nitrogen or argon used as a carrier gas for the second source gas supplies the second source gas to the inner chamber 32 via the valve 72e. Connected to the supply path. The inert gas supply system 74 adjusts the flow rate of the valve 74a and the inert gas in order from the upstream side between the inert gas source 73a and the inner chamber 32, as in the case of the supply system 73 described above. A mass flow controller 74b and a valve 74c are connected.

  In FIG. 7, a carrier gas for the first source gas of the first gas supply system 71 and the second source gas of the second gas supply system 72 is supplied from the same inert gas source 73a. Of course, it is also possible to adopt a configuration in which different inert gas sources are allowed to flow into the respective gas supply systems 71 and 72.

  The bottom wall 32b of the inner chamber 32 is used to discharge the first source gas and the second source gas that do not contribute to film formation, that is, the first source gas and the second source gas that do not adsorb or react. Further, a discharge / exhaust system 75 for exhausting the inside of the vacuum film forming apparatus 3 is provided, and a valve 75a, a trap 61, and a pressure adjusting valve that adjusts the pressure in the vacuum film forming apparatus 3 in this order from the inner chamber 32 side. 76, and a vacuum pump 77 such as a dry pump is provided. For example, in order to exhaust only the outer chamber 31, the vacuum film forming apparatus 3 may be directly connected to the vacuum pump 77 through a valve.

  Note that temperature control means (not shown) such as a heater is provided in the flow path of the first source gas and the second source gas so that the first source gas and the second source gas are not liquefied. ing. In some cases, a cooling means may be provided to adjust the temperature.

  In addition, all of the above-described valve opening and closing is automatically controlled. Since the valves 71c and 71e provided on the upstream side and the downstream side of the buffer tank 71d and the valve 72e provided on the downstream side of the buffer tank 72d for the second source gas are frequently opened and closed, they have high durability. It is preferable to use a valve.

  As described above, since the vacuum film forming apparatus 3 has a structure in which the trap 61 is provided on the downstream side of the inner chamber 32, the first source gas is suppressed from flowing into the pressure adjusting valve 76 and the vacuum pump 77, Deterioration of the pressure adjusting valve 76 and the vacuum pump 77 can be suppressed.

  An example of a method of forming a film on the substrate S using the vacuum film forming apparatus 3 of the present invention using the first source gas and the second source gas that reacts with the first source gas will be described below. In the present invention, an inert gas such as nitrogen is always supplied during film formation.

  First, the buffer tank 71d is filled with a predetermined amount of the first source gas such as trimethylaluminum.

  Next, the first source gas in the buffer tank 71 d is supplied to the inner chamber 32, and the first source gas is adsorbed on the surface of the substrate S.

When the first source gas is filled in the buffer tank 71d, when the first source gas is supplied from the buffer tank 71d to the inner chamber 32, and when the first source gas is discharged from the inner chamber 32 When the second source gas is present, the second source gas such as H ₂ O gas is not supplied from the second source gas container 72 a to the inner chamber 32.

  As described above, after the first source gas is adsorbed on the surface of the substrate S, the valve 71e is closed, the valve 75a is opened, and the first source gas not adsorbed on the substrate S is discharged from the inner chamber 32. . At this time, since the inert gas is supplied to the inner chamber 32 via the inert gas supply system 73, the first raw material gas is pushed out by the inert gas, and the first raw material gas is pushed into the inner chamber 32. It can be discharged immediately. The discharged first source gas is introduced into the trap 61 and subjected to a thermal decomposition process. Therefore, the first raw material gas is suppressed from flowing into the pressure adjusting valve 76 and the vacuum pump 77 on the downstream side, and deterioration due to failure, contamination, or the like caused by the flow of the first raw material gas can be suppressed.

After the first source gas is adsorbed and discharged, the second source gas such as H ₂ O gas is supplied to the inner chamber 32 via the buffer tank 72d, and the first source material adsorbed on the surface of the substrate S is supplied. React with gas.

  As described above, after the first source gas and the second source gas are reacted on the surface of the substrate S, the valve 72e is closed, the valve 75a is opened, and the second source gas is discharged from the inner chamber 32. To do. At this time, since the inert gas is supplied to the inner chamber 32 via the inert gas supply system 74, the second source gas is pushed out by the inert gas, and the second source gas is supplied to the inner chamber 32. It can be discharged immediately. Then, the discharged second source gas is introduced into the trap 61 and processed.

  As described above, when the first source gas is discharged from the inner chamber 32 after the first source gas is adsorbed on the surface of the substrate S, when the second source gas is supplied to the inner chamber 32 When the second source gas is discharged from the inner chamber 32 after the first source gas and the second source gas are reacted on the surface of the substrate S, the valve 71e is kept closed. By opening 71b and 71c, the first source gas is introduced from the first source gas container 71a to the buffer tank 71d. After introducing the first source gas into the buffer tank 71d, the valve 71c is closed to perform a step of supplying a certain amount of the first source gas to the inner chamber as necessary. The introduction of the second source gas into the buffer tank is performed in the same manner.

  The step of supplying the first source gas to the inner chamber 32 as described above, the step of discharging the first source gas from the inner chamber 32, the step of supplying the second source gas to the inner chamber 32, and the inner chamber 32 A thin film having a desired film thickness can be formed on the substrate S by repeating the operation (one cycle) of sequentially performing the process of discharging the second source gas from the substrate.

FIG. 8 shows a sequence of the source gas supplied to the inner chamber 32 described above. TMA gas is exemplified as the first source gas, H ₂ O gas is exemplified as the second source gas, and nitrogen gas (N ₂ gas) is exemplified as the inert gas of the carrier gas. In FIG. 8, the base line indicates a state in which the source gas and the carrier gas are not supplied, and in FIG. 8, the upper line rising upward from the base line indicates a state in which gas is supplied. In FIG. 8, _{N 2} and _{N 2} as a carrier gas of supplied TMA from the gas supply source described as _"N 2 (TMA)", _{H 2} and _{N 2} as a carrier gas of O gas _"N 2 _{(H 2} O) ”. FIG. 8 also shows the sequence of the first source gas introduced into the buffer tank 71d (denoted as “TMA (buffer tank)”).

  8, (1) is a step of supplying the first source gas from the buffer tank 71d to the inner chamber 32, (2) is a step of discharging the first source gas from the inner chamber 32, and (3) is a step of discharging the first source gas from the inner chamber 32. A step of supplying the second source gas from the buffer tank 72d to the inner chamber 32, and a step (4) of discharging the second source gas from the inner chamber 32 are shown.

  As shown in FIG. 8, the first source gas and the second source gas are alternately supplied in pulses to the inner chamber 32, and the first source gas is placed on the substrate S placed in the inner chamber 32. Is formed by a reaction between the first source gas and the second source gas.

  In FIG. 8, the first source gas is introduced into the buffer tank 71d in the step (3) of supplying the second source gas and the step (4) of discharging the second source gas. However, what is necessary is just to introduce | transduce 1st source gas to the buffer tank 71d at any time between the processes of (2)-(4). The same applies to the case where the second source gas is introduced into the buffer tank 72d.

Incidentally, the supply amount (Q) of the first source gas to the inner chamber 32 includes the capacity V (cc) of the buffer tank 71d and the pressure P _v (T) of the first source gas container 71a (T is the first amount). Depending on the temperature of the source gas) and the atmospheric pressure P _atm , for example, a relationship of Q = V × {P _v (T) / P _atm } is established. Therefore, a desired amount of the first source gas can be supplied to the inner chamber 32 by adjusting the capacity of the buffer tank 71d and the pressure of the first source gas container 71a. The same applies to the second source gas.

An example of conditions for forming aluminum oxide (Al ₂ O ₃ ) on the substrate S using the vacuum film forming apparatus 3 described above is shown below. Under the following conditions, the capacity V of the buffer tank 71d and the surface area S (cm ² ) of the substrate are V = (4 × 10 ⁻⁵ to 4 × 10 ⁻⁴ ) × {P _atm / P _v (T )} × 2.5S. The same applies to the buffer tank 72d.

First source gas: trimethylaluminum (TMA) gas Second source gas: H ₂ O gas Inert gas: N ₂
N ₂ gas flow rate: 1 SLM each
Temperature of TMA gas raw material container: 20-80 ° C
Temperature of H ₂ O gas raw material container: 20 to 80 ° C.
Gas channel system temperature: 20-80 ° C
Surface area of substrate: 8000 cm ²
Capacity of inner chamber (deposition area): 770 mm x 960 mm x 10 mmt
Inner chamber temperature: 90-150 ° C
Buffer tank capacity: 14-140cc

  For example, under the above conditions, the time of step (1) in FIG. 8 is 2 seconds, the time of step (2) is 20 seconds, the time of step (3) is 2 seconds, and the time of step (4) Can be formed for 20 seconds.

When two kinds of first source gas and second source gas are used as source gases, there is no particular limitation as long as they are gases that react with each other. For example, as the second source gas to be reacted with TMA that is the first source gas described above, an oxidizing agent such as oxygen or ozone can be used in addition to the H ₂ O gas. The present invention exerts an effect that the first source gas can be prevented from flowing into a pressure adjusting valve or a vacuum pump provided on the downstream side of the inner chamber and adversely affecting the first source gas. In the case where the source gas is a highly reactive gas, the effects of the present invention can be exhibited particularly remarkably.

  Moreover, in the example mentioned above, although the raw material of 1st raw material gas and 2nd raw material gas illustrated liquid, the raw material of each raw material gas may be solid or gas. In the case of solid and liquid, a raw material gas may be generated by providing a vaporizer, a heating means, or the like.

  And in the example mentioned above, although carrier gas was supplied, it is not necessary to use carrier gas. However, if one source gas remains in the gas supply path or the inner chamber, it reacts with the other source gas, etc., and the supply amount of the source gas to the inner chamber fluctuates, or the gas supply path It is preferable to always flow an inert gas because the inner chamber may become contaminated.

  Further, in the above-described example, the first source gas supply unit and the second source gas supply unit are provided with buffer tanks 71d and 72d. However, these buffer tanks may not be used, for example, A valve or a mass flow controller may be used. However, as described above, a structure using a buffer tank is preferable in consideration of a stable supply amount to the inner chamber 32, utilization efficiency of raw materials, failure of components, and the like.

  Glass substrate (A) on which Ni film is formed on the surface, glass substrate (B-1) on which Ni film and Mo film are sequentially formed on the surface, glass substrate (B-2) on which Ni film and Mo film are sequentially formed on the surface And the process shown in FIG. 9 (a) and (b) was performed using 4 types of board | substrates, the glass substrate (B-3) which formed Ni film | membrane and Mo film | membrane in order on the surface. 9A and 9B, the horizontal axis represents elapsed time (hours) and the vertical axis represents temperature (° C.). As a control, an aluminum oxide film having a thickness of 5.4 nm was formed on a Si film at 90 ° C. using the same ALD apparatus, source gas, and supply process as described below. This film thickness was measured by ellipsometry (fixed at N = 1.63).

For the glass substrate (A), without et etching, the substrate is placed (A) in the ALD apparatus (vacuum deposition apparatus) on a support stage provided in the 3 inner chamber 32 of which is shown in Figures 3 and 4, According to the flow chart showing the gas sequence supplied to the inner chamber shown in FIG. 8, trimethylaluminum gas and H ₂ O gas are alternately supplied from the gas nozzle 35 as source gases into the inner chamber 32 in a pulsed manner, and the pressure is 300 Pa. Then, the reaction was performed at a substrate temperature of 90 ° C., and this reaction process was repeated a predetermined number of times to form an aluminum oxide film having a thickness of 5.8 nm on the Ni film. This film thickness was measured by ellipsometry (fixed at N = 1.63).

Substrate (B-1) In the case of the Mo film sacrificial film and d etching using shown to d etching apparatus in FIG. 2, then without atmospheric exposure, the substrate under vacuum using an ALD apparatus (A) An aluminum oxide film was formed as in the case. Specifically, as the process B-1 shown in FIG. 9 (a) and (b), using a xenon difluoride gas as an etchant, pressure: 150 Pa under a substrate temperature at room temperature Dee etching, and then the atmosphere Without exposure, it was held for 2.5 hours (h) under vacuum (5 × 10 ⁻³ Pa), then purged with nitrogen gas (300 Pa) for 0.5 hours, and then the substrate (A) under vacuum As in the case of, an aluminum oxide film was formed on the Ni film. The thickness of the aluminum oxide film was 7.8 nm. This film thickness was measured by ellipsometry (fixed at N = 1.63).

Substrate (B-2) In the case of the Mo film sacrificial film and d etching using shown to d etching apparatus in FIG. 2, then without atmospheric exposure, the substrate under vacuum using an ALD apparatus (A) An aluminum oxide film was formed as in the case. Specifically, as the process B-2 shown in FIG. 9 (a), using a xenon difluoride gas as an etchant, pressure: 150 Pa under a substrate temperature at room temperature Dee etching, and then without atmospheric exposure Hold for 2.5 hours under vacuum (5 × 10 ⁻³ Pa), purge with nitrogen gas (300 Pa) for 0.5 hour, flush with additional H ₂ O gas for 5 minutes, and then with nitrogen gas Purge was performed for 5 minutes in the same manner as described above, and then an aluminum oxide film was formed on the Ni film in the same manner as the substrate (A) under vacuum. The thickness of this aluminum oxide film was 7.5 nm. This film thickness was measured by ellipsometry (fixed at N = 1.63).

If the substrate (B-3), was d etching the Mo film sacrificial film using shown to d etching apparatus in FIG. 2, air exposure and (ATM), then held under vacuum, then the ALD apparatus An aluminum oxide film was formed in the same manner as in the case of the substrate A under vacuum. Specifically, as the process B-3 shown in FIG. 9 (b), using a xenon difluoride gas as an etchant, pressure: 150 Pa under a substrate temperature at room temperature Dee etching, followed 20 hours atmosphere at room temperature After exposure, hold for 2.5 hours under vacuum (5 × 10 ⁻³ Pa), then purge with nitrogen gas (300 Pa) for 0.5 hour, then substrate A under vacuum using ALD equipment Similarly, an aluminum oxide film was formed on the Ni film. The thickness of the aluminum oxide film was 8.8 nm. This film thickness was measured by ellipsometry (fixed at N = 1.63).

Comparing the process B-1 to B-3, the thickness of the aluminum oxide film in the case of atmospheric exposure after et etching is was thicker 1nm about than if after et etching also had been held in a vacuum. Since the formation conditions of the aluminum oxide film in each process were the same, some substance (impurities) was formed on the contact surface between the aluminum oxide film and the Ni film depending on the treatment before performing the ALD method. I thought it was. Therefore, the impurity layer on the contact surface between the aluminum oxide film and the Ni film was observed by Auger electron spectroscopy (AES). The results are summarized in FIG.

In FIG. 10, the horizontal axis represents elements (C, F, Mo), and the vertical axis represents strength. As is clear from FIG. 10, F was not detected on the contact surface between the aluminum oxide film and the Ni film, but it was found that C and Mo were contained. That is, the layer of the contact surface analyzed by ellipsometry is composed of C and Mo, and it is clear that the C content at the contact surface increases with exposure to the atmosphere. The C and Mo contents were not observed to change with the additional H ₂ O gas treatment.

Therefore, by not contacting the atmosphere in the process of the upper disappeared etching and ALD deposition, the carbon content of the layer in the contact surface between the film by film and ALD deposition after et etching is can be seen that less.

As a result, by performing in vacuum and d etching and ALD deposition especially, display of the production yield with electrical characteristics and optical characteristics of the finally obtained devices is improved it can be improved.

According to the present invention, the ALD apparatus used to d etching apparatus followed with a vacuum consistent substrate processing apparatus, a vacuum consistent substrate processing apparatus including the other of the film forming apparatus such as, also, this consistent vacuum substrate processing apparatus By reducing the volume of the reaction chamber of the ALD device that is one of the components and the surface area of the reaction chamber, the utilization efficiency of the raw material gas is increased, and the discharge time of the raw material gas after adsorption / reaction is shortened. Vacuum deposition that increases the replacement efficiency of the source gas, facilitates the processing of thin films other than the substrate, and prevents deterioration of the pressure control valve and vacuum pump provided downstream of the reaction chamber Since an integrated vacuum substrate processing apparatus provided with the apparatus and a film forming method using the processing apparatus can be provided, the present invention can be used in various technical fields where it is necessary to form a thin film.

11 transfer chamber 1 2 d etching apparatus (process chamber)
13 ALD equipment 14 Plasma cleaning chamber (processing chamber)
15 Buffer chamber (processing chamber) 16 Gas cleaning chamber (processing chamber)
17 Heating chamber (processing chamber) 18 Load lock chamber (processing chamber)
2 Reaction chamber 21 Substrate support stage 22 Outer chamber 22a Side wall 22b Top plate 22c Bottom plate 22d, 22e, 22f Valve 23 Inner chamber 23a (For inner chamber) Top plate member 23b Protruding portion 23c, 23d Valve 24 Gate valve 25 Substrate transport / Unloading port 26 First buffer tanks 26a, 26b, 26c Valve 27 Second buffer tanks 27a, 27b, 27c Valve 28 Etching gas tank 3 Vacuum deposition apparatus 31 Outer chamber 31a Top plate 32 Inner chamber (reaction chamber)
32a Top plate 32b Bottom wall 33 Gate valve 34 Transfer chamber 35 Gas nozzle 36 Support members 37, 37a, 37b Upper deposition plate 38, 39, 41 Lower deposition plate 40 Side wall deposition plate 61 Trap 62 Outer cylinder member 63 Gas inlet 64 Discharge port 65 Bottom member 66 Inner cylinder member 67 Heating means 71 First gas supply system 71a First source gas container 71b, 71c, 71e Valve 71d Buffer tank 72 Second gas supply system 72a Second source gas container 72b, 72c, 72e Valve 72d Buffer tank 73 Supply system 73a Inert gas source 73b, 73d Valve 73c Mass flow controller 74 Supply system 74a, 74c Valve
74b Mass flow controller 75 Discharge / exhaust system 75a Valve 76 Pressure adjusting valve 77 Vacuum pump S Substrate

Claims (19)

Polygonal transfer chamber, and each of the respective sides of the polygon-connected load lock chamber, the heating chamber, et etching apparatus, and includes a vacuum deposition apparatus, further in vacuum substrate processing apparatus comprising a vacuum evacuation system The vacuum film forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner, and the source gases are formed on a substrate that is placed on a support stage that can be moved up and down provided in the reaction chamber. A film forming apparatus for forming a film by the reaction of the vacuum film forming apparatus, which is constituted by an outer wall of the vacuum film forming apparatus, and is provided with an openable and closable top plate and a lower part of the outer chamber and is openable and closable. It is composed of a dual structure chamber with an inner chamber which is a reaction chamber equipped with a plate, and the gas nozzle for supplying the source gas into the inner chamber is parallel to the surface of the substrate. Provided in the The source gas discharge path in the chamber is provided with a trap into which the source gas that has not contributed to the film formation is introduced, and is provided with a heating means inside, and downstream of the trap. On the side, a pressure adjusting valve for adjusting the pressure in the vacuum film forming apparatus and an evacuation system are provided in this order so that the film is formed on the substrate placed in the inner chamber. An integrated vacuum substrate processing apparatus characterized by comprising: Polygonal transfer chamber, and each connected load lock chambers on each side of the polygon, et etching apparatus, and includes a vacuum deposition apparatus, further a consistent vacuum substrate processing apparatus comprising a vacuum evacuation system, The vacuum film forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner, and reacts the source gases on a substrate placed on a vertically movable support stage provided in the reaction chamber. A film forming apparatus for forming a film, which is configured by an outer wall of the vacuum film forming apparatus and includes an openable / closable top plate, and is provided in a lower part of the outer chamber and includes an openable / closable top plate The gas chamber for supplying the source gas into the inner chamber is provided in the inner chamber so as to be parallel to the surface of the substrate. , The inner chamber A trap in which the source gas that has not contributed to the film formation is introduced in the discharge path of the source gas is provided with a heating means inside, and downstream of the trap Is provided with a pressure adjusting valve for adjusting the pressure in the vacuum film forming apparatus and a vacuum exhaust system in this order, so that the film is formed on the substrate placed in the inner chamber. An integrated vacuum substrate processing apparatus characterized by being configured. Polygonal transfer chamber, and to each side of polygonal connected load lock chamber, the heating chamber, et etching apparatus, and includes a vacuum deposition apparatus, further in vacuum substrate processing apparatus comprising a vacuum evacuation system The vacuum film forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner, and the source gases are formed on a substrate that is placed on a support stage that can be moved up and down provided in the reaction chamber. A film forming apparatus for forming a film by the reaction of the vacuum film forming apparatus, which is constituted by an outer wall of the vacuum film forming apparatus, and is provided with an openable and closable top plate and a lower part of the outer chamber and is openable and closable. It is composed of a dual structure chamber with an inner chamber which is a reaction chamber equipped with a plate, and the gas nozzle for supplying the source gas into the inner chamber is parallel to the surface of the substrate. Provided Consistent vacuum substrate processing apparatus characterized by being configured to be deposited on a substrate placed on the inner chamber. Polygonal transfer chamber, and each connected load lock chambers on each side of the polygon, et etching apparatus, and includes a vacuum deposition apparatus, further a consistent vacuum substrate processing apparatus comprising a vacuum evacuation system, The vacuum film forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner, and reacts the source gases on a substrate placed on a vertically movable support stage provided in the reaction chamber. A film forming apparatus for forming a film, which is configured by an outer wall of the vacuum film forming apparatus and includes an openable / closable top plate, and is provided in a lower part of the outer chamber and includes an openable / closable top plate The gas chamber for supplying the source gas into the inner chamber is provided in the inner chamber so as to be parallel to the surface of the substrate. The inside Consistent vacuum substrate processing apparatus characterized by being configured to be deposited on a substrate that is placed in the members. Before disappeared etching apparatus, a vacuum etching apparatus having a reaction chamber, the reaction chamber, a gas introduction path for introducing the indoor an etching gas at any pressure and the reaction chamber etching by reaction product gas and the remainder of the A gas exhaust path for exhausting the etching gas, and introduction and reaction of the etching gas into the reaction chamber on a substrate having a film to be processed placed on a support stage provided in the reaction chamber. By repeating the discharge of the reaction product gas and the remaining etching gas in the chamber, the film to be processed is etched by the reaction between the etching gas and the film to be processed. An outer chamber constituted by an outer wall, and a top plate member for an inner chamber disposed in the outer chamber so as to be movable up and down, wherein the outer chamber is lowered during etching. Bottom consistent vacuum substrate processing apparatus according to claim 1, characterized in that a top plate member chamber inner constituting a chamber within which is an etching process chamber with plates. In the vacuum film forming apparatus, an upper deposition plate is provided on the inner wall surface of the top plate of the inner chamber, and at a position facing the back surface of the substrate placed on the lower periphery of the gas nozzle and on the support stage, respectively. 6. The integrated vacuum substrate processing apparatus according to claim 1, wherein a lower deposition preventing plate is provided, and a sidewall preventing plate is provided on a sidewall of the inner chamber. . The consistent vacuum substrate processing apparatus according to claim 6, wherein a position facing the back surface of the substrate on which the lower deposition preventing plate is provided is a back surface periphery. In the vacuum film forming apparatus, a buffer tank for filling the source gas is provided in the middle of the supply means for supplying at least one kind of gas among the plurality of source gases, and the source gas filled in the buffer tank The integrated vacuum substrate processing apparatus according to claim 1, wherein the gas is supplied from a gas nozzle into the inner chamber. In the vacuum film forming apparatus, a buffer tank for filling the source gas is provided in the middle of each supply means for supplying each of the plurality of source gases, and the source gas filled in each buffer tank is gas nozzle The integrated vacuum substrate processing apparatus according to any one of claims 1 to 7, wherein the vacuum integrated substrate processing apparatus is configured to be supplied into the inner chamber. In the vacuum film-forming apparatus, the plurality of source gases are composed of two types of source gases, and the first and second source gases are provided in the middle of each supply means for supplying the first and second source gases. The buffer tank which each fills is provided, It is comprised so that the gas with which each buffer tank was filled may be supplied in an inner chamber from a gas nozzle, The any one of Claims 1-9 characterized by the above-mentioned. Vacuum integrated substrate processing equipment. In the vacuum deposition apparatus, the first source gas is trimethyl aluminum gas, consistent vacuum substrate processing apparatus according to claim 10 in which the second source gas being a the H _{2 O} gas. The integrated vacuum substrate processing apparatus according to any one of claims 1 to 11, wherein the vacuum film forming apparatus includes a mechanism for opening and closing each top plate of the outer chamber and the inner chamber. The vacuum integrated substrate processing according to any one of claims 1 to 11, wherein the vacuum film forming apparatus includes a mechanism for opening and closing each top plate of the outer chamber and the inner chamber by a motor drive. apparatus. 14. The vacuum integrated substrate processing apparatus further comprises at least one selected from a plasma cleaning chamber or a gas cleaning chamber, a buffer chamber, and a sealing chamber. The integrated vacuum substrate processing apparatus described in 1. Polygonal transfer chamber, and each connected load lock chambers on each side of the polygon, et etching apparatus, and includes a vacuum deposition apparatus, further a consistent vacuum substrate processing apparatus comprising a vacuum evacuation system, diether etching apparatus, a vacuum etching apparatus having a reaction chamber, the reaction chamber, the reaction product by gas introduction path and the reaction etching gas chamber to be introduced into said chamber an etching gas at any pressure and residual and a gas discharge path for discharging the etching gas, on a substrate having a target film to be mounted on a support stage provided in the reaction chamber, and the introduction of the etching grayed gas into the reaction chamber By repeating the discharge of the reaction product gas and the remaining etching gas in the reaction chamber, the film to be processed is etched by the reaction between the etching gas and the film to be processed. And an outer chamber constituted by the outer wall of the reaction chamber, and a top plate member for the inner chamber disposed in the outer chamber so as to be movable up and down, together with a bottom plate of the outer chamber lowered during etching An inner chamber top plate member constituting an inner chamber which is an etching processing chamber, and the vacuum film-forming apparatus alternately supplies a plurality of source gases to the reaction chamber in a pulsed manner. A vacuum film forming apparatus for forming a film by a reaction of the raw material gas on a substrate placed on a support stage that can be raised and lowered, and is configured by an outer wall of the vacuum film forming apparatus and can be opened and closed freely And a double-structured chamber, which is installed in a lower part of the outer chamber and is an inner chamber that is a reaction chamber having an openable and closable top plate. A gas nozzle for supplying a feed gas is provided in the inner chamber so as to be parallel to the surface of the substrate, and an upper deposition plate is provided on the inner wall surface of the top plate of the inner chamber. A lower deposition plate and a sidewall deposition plate are also provided on the side wall of the inner chamber at positions opposite to the back surface of the substrate placed on the stage, respectively, and the source gas in the inner chamber is provided. A trap for introducing the source gas that has not contributed to the film formation and having a heating means provided therein is provided in the discharge path of the film, and vacuum film formation is provided downstream of the trap. A pressure adjusting valve and an evacuation system for adjusting the pressure in the apparatus are provided in this order, and the film is formed on the substrate placed in the inner chamber. Vacuum consistent features Substrate processing equipment. The vacuum consistent substrate processing apparatus according to claim 15, further comprising at least one selected from a heating chamber, a plasma cleaning chamber or a gas cleaning chamber, a buffer chamber, and a sealing chamber. Substrate processing equipment. A deposition method using a vacuum consistent substrate processing apparatus according to any one of claims 1 to 16, the substrate on which the sacrificial layer is formed on the surface via the vacuum transfer chamber of the polygonal et etching apparatus transported within, by introducing fluoride rare gas chamber, under vacuum, the sacrificial layer was d etching on the substrate, thus resulting substrate, deposition of the vacuum deposition apparatus via the vacuum transfer chamber It is transported to the reaction chamber constituting the chamber, placed on a vertically movable support stage provided in the reaction chamber, and the first source gas and the second source gas are alternately supplied to the reaction chamber in pulses. Then, supply, adsorption, and discharge of the first source gas, supply of the second source gas, reaction of the adsorbed first source gas and second source gas, and discharge of the second source gas Are alternately and repeatedly formed, and when the film is formed on the substrate, the outer wall of the vacuum film forming apparatus is configured, A substrate is placed on the support stage in the inner chamber, which is a reaction chamber equipped with a top and bottom that can be opened and closed, and is placed on the surface of the substrate. The first source gas and the second source gas are alternately supplied in pulses from the gas nozzle provided in the inner chamber so as to be parallel to the inner chamber. In this case, the first source gas and the second source gas are supplied to the respective buffers provided in the middle of the first and second source gas supply means. The gas stored in the tank is supplied from the gas nozzle into the inner chamber, and the first source gas and the second source gas that have not contributed to the film formation in the inner chamber are A track provided downstream of the inner chamber Deposition method characterized by introducing, deposited with decomposition and heat-treated within. The film forming method according to claim 17, wherein the first source gas is trimethylaluminum gas and the second source gas is H ₂ O gas. 19. The film forming method according to claim 17, wherein the sacrificial layer is at least one layer selected from a Mo film, a W film, a Si film, and a Ti film.

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