JP5749201B2 - 白色発光装置 - Google Patents
白色発光装置 Download PDFInfo
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- JP5749201B2 JP5749201B2 JP2012053378A JP2012053378A JP5749201B2 JP 5749201 B2 JP5749201 B2 JP 5749201B2 JP 2012053378 A JP2012053378 A JP 2012053378A JP 2012053378 A JP2012053378 A JP 2012053378A JP 5749201 B2 JP5749201 B2 JP 5749201B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 114
- 238000009877 rendering Methods 0.000 claims description 15
- 229910052791 calcium Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- 239000012190 activator Substances 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 229910052771 Terbium Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 239000011575 calcium Substances 0.000 description 15
- 238000004088 simulation Methods 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005284 excitation Effects 0.000 description 7
- 239000011572 manganese Substances 0.000 description 7
- 229920002050 silicone resin Polymers 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 238000000295 emission spectrum Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 150000004767 nitrides Chemical group 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004709 CaSi Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- -1 europium (Eu) Chemical class 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Description
本実施の形態の白色発光装置は、430nm以上470nm以下の波長領域にピーク波長を有する発光素子と、525nm以上560nm以下の第1のピーク波長の光を発光する第1の蛍光体と、第1のピーク波長より長い第2のピーク波長の光を発光する第2の蛍光体と、第2のピーク波長より長い620nm以上750nm以下の第3のピーク波長の光を発光する第3の蛍光体と、を備える。そして、第1の蛍光体と第2の蛍光体が、
MSiαOβNγ
(ただし、MはEuを含み、SrまたはBaを必ず含み、さらにCa、Mg、Znを含んでも良い。さらに、Ti、Pb、Mn、As、Al、Pr、Tb、およびCeからなる群から選ばれる元素を賦活剤として含有しても良い。また、1.8≦α≦2.4、1.8≦β≦2.2、1.8≦γ≦2.2である。)
の組成を有し、第1のピーク波長をλ1(nm)、第2のピーク波長をλ2(nm)とする場合に、1100≦λ1+λ2、かつ、λ2−λ1≦60である。
MSiαOβNγ
(ただし、Mはユウロピウム(Eu)を含み、ストロンチウム(Sr)またはバリウム(Ba)を必ず含む2種以上の金属であり、さらに、カルシウム(Ca)、マグネシウム(Mg)、亜鉛(Zn)を含んでも良い。さらに、チタン(Ti)、鉛(Pb)、マンガン(Mn)、ヒ素(As)、アルミニウム(Al)、プラセオジウム(Pr)、テルビウム(Tb)、およびセリウム(Ce)からなる群から選ばれる元素を賦活剤として含有しても良い。また、1.8≦α≦2.4、1.8≦β≦2.2、1.8≦γ≦2.2である。)
の組成を備えるいわゆるSION系蛍光体である。
(Sr(1−x−y−z)BaxCayEuz)Si2O2N2
(ただし、0≦x<1、0≦y≦1、0.01≦z≦0.2)
の組成を備える。この式により表されるSiを含む酸窒化物蛍光体材料は、例えば、xおよびyの組成を変更することで発光波長を調整することが可能であり、同一母体において複数の発光波長を持つ蛍光体を得ることができる。なお、結晶構造を安定化したり、発光強度を高めたりするために、ストロンチウム(Sr)、バリウム(Ba)、及びカルシウム(Ca)の一部をMg及びZnの少なくともいずれか一方に置き換えてもよい。また、Ti、Pb、Mn、As、Al、Pr、Tb、及びCeからなる群から選択される少なくとも1つの元素を賦活剤として微量に含有してもよい。
本実施の形態の白色発光装置は、2種のSION系蛍光体が、混合されて1層の蛍光体層に含有されること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
上記組成において、x=2かつy=5、又はx=1かつy=7であることが望ましいが、x及びyは、任意の値とすることができる。上記式により表される窒化物系蛍光体として、Mnが賦活剤として添加された(SrxCa(1−x))2Si5N8:Eu、Sr2Si5N8:Eu、Ca2Si5N8:Eu、SrxCa(1−x)Si7N10:Eu、SrSi7N10:Eu、CaSi7N10:Eu等の蛍光体を使用することが望ましい。これらの蛍光体には、Mg、Sr、Ca、Ba、Zn、B、Al、Cu、Mn、Cr、及びNiからなる群から選ばれる少なくとも1つの元素が含有されてもよい。また、Ce,Pr、Tb、Nd、及びLaからなる群から選ばれる少なくとも1つの元素を、賦活剤として含有してもよい。
またSiの一部をAlに置き換えたサイアロン系蛍光体:LxSiyAl(12−y)OzN(16−z):Eu(LはSr、Ca、Sr及びCaからなる群からなる群から選択される少なくとも1つの元素)を用いても良い。
14 発光素子
20 第1の蛍光体層
22 第2の蛍光体層
24 第3の蛍光体層
Claims (4)
- 430nm以上470nm以下の波長領域にピーク波長を有する発光素子と、
525nm以上560nm以下の第1のピーク波長の光を発光する第1の蛍光体と、
前記第1のピーク波長より長い第2のピーク波長の光を発光する第2の蛍光体と、
前記第2のピーク波長より長い620nm以上750nm以下の第3のピーク波長の光を発光する第3の蛍光体と、を備え、
前記第1の蛍光体と前記第2の蛍光体が、
MSiαOβNγ
(ただし、MはEuを含み、SrまたはBaを必ず含み、さらにCa、Mg、Znを含んでも良い。さらに、Ti、Pb、Mn、As、Al、Pr、Tb、およびCeからなる群から選ばれる元素を賦活剤として含有しても良い。また、1.8≦α≦2.4、1.8≦β≦2.2、1.8≦γ≦2.2である。)
の組成を有し、
前記第1のピーク波長をλ1(nm)、前記第2のピーク波長をλ2(nm)とする場合に、
1100≦λ1+λ2、かつ、λ2−λ1≦60、かつ、λ1≦539であり、
平均演色評価数(Ra)が85より大きい光を発することを特徴とする白色発光装置。 - 30≦λ2−λ1であることを特徴とする請求項1記載の白色発光装置。
- 1110≦λ1+λ2であることを特徴とする請求項1または請求項2記載の白色発光装置。
- 530≦λ1であることを特徴とする請求項1ないし請求項3いずれか一項記載の白色発光装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053378A JP5749201B2 (ja) | 2012-03-09 | 2012-03-09 | 白色発光装置 |
US13/597,808 US8836211B2 (en) | 2012-03-09 | 2012-08-29 | White light emitting device containing three fluorescent materials having different peak wavelengths |
EP13156044.3A EP2636718B1 (en) | 2012-03-09 | 2013-02-20 | White light emitting device |
TW102106602A TWI489659B (zh) | 2012-03-09 | 2013-02-25 | 白色發光裝置 |
KR1020130020225A KR20130103360A (ko) | 2012-03-09 | 2013-02-26 | 백색 발광 장치 |
CN201310063120.1A CN103311413B (zh) | 2012-03-09 | 2013-02-28 | 白色发光装置 |
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JP2012053378A JP5749201B2 (ja) | 2012-03-09 | 2012-03-09 | 白色発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2013187485A JP2013187485A (ja) | 2013-09-19 |
JP5749201B2 true JP5749201B2 (ja) | 2015-07-15 |
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JP2012053378A Active JP5749201B2 (ja) | 2012-03-09 | 2012-03-09 | 白色発光装置 |
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EP (1) | EP2636718B1 (ja) |
JP (1) | JP5749201B2 (ja) |
KR (1) | KR20130103360A (ja) |
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US20140022761A1 (en) * | 2011-01-21 | 2014-01-23 | Osram Sylvania Inc. | Luminescent Converter and LED Light Source Containing Same |
JP6081235B2 (ja) | 2013-03-07 | 2017-02-15 | 株式会社東芝 | 白色発光装置 |
KR101417874B1 (ko) * | 2013-10-02 | 2014-07-09 | 지엘비텍 주식회사 | 고연색성 백색 발광 소자 |
EP3557635B1 (en) * | 2013-10-02 | 2020-05-27 | Glbtech Co. Ltd. | White light emitting device having high color rendering |
JPWO2016159141A1 (ja) * | 2015-04-03 | 2018-01-18 | シャープ株式会社 | 発光装置 |
JP2017017059A (ja) * | 2015-06-26 | 2017-01-19 | パナソニックIpマネジメント株式会社 | 照明用光源及び照明装置 |
KR102423748B1 (ko) * | 2015-07-08 | 2022-07-22 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광장치 |
JP2017090625A (ja) * | 2015-11-09 | 2017-05-25 | 日本碍子株式会社 | 光学部品及びその製造方法 |
US10236425B2 (en) * | 2016-03-08 | 2019-03-19 | Glbtech Co., Ltd. | White light emitting device having high color rendering |
US10784416B2 (en) * | 2016-03-24 | 2020-09-22 | Sharp Kabushiki Kaisha | Light source device and light emitting device |
JP6906914B2 (ja) * | 2016-08-31 | 2021-07-21 | エルジー ディスプレイ カンパニー リミテッド | 波長選択素子、光源装置及び表示装置 |
WO2019004119A1 (ja) * | 2017-06-28 | 2019-01-03 | 京セラ株式会社 | 発光装置および照明装置 |
CN115763672B (zh) * | 2023-01-09 | 2023-06-13 | 四川世纪和光科技发展有限公司 | 一种近自然光led封装构件、封装方法及照明装置 |
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JP4110417B2 (ja) | 2005-03-18 | 2008-07-02 | セイコーエプソン株式会社 | 面発光型装置及びその製造方法 |
JP4104013B2 (ja) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
TWI364853B (en) * | 2006-08-14 | 2012-05-21 | Fujikura Ltd | Emitting device and illuminating device |
JP5194675B2 (ja) * | 2006-10-31 | 2013-05-08 | 東芝ライテック株式会社 | 発光装置 |
JP2008235552A (ja) * | 2007-03-20 | 2008-10-02 | Toshiba Lighting & Technology Corp | 発光装置の製造方法および発光装置 |
CN101157854B (zh) * | 2007-07-02 | 2010-10-13 | 北京宇极科技发展有限公司 | 一种氮氧化合物发光材料、其制备方法及其应用 |
WO2009017206A1 (ja) * | 2007-08-01 | 2009-02-05 | Mitsubishi Chemical Corporation | 蛍光体及びその製造方法、結晶性窒化珪素及びその製造方法、蛍光体含有組成物、並びに、該蛍光体を用いた発光装置、画像表示装置及び照明装置 |
JP5044329B2 (ja) | 2007-08-31 | 2012-10-10 | 株式会社東芝 | 発光装置 |
WO2010041195A1 (en) | 2008-10-09 | 2010-04-15 | Philips Intellectual Property & Standards Gmbh | Blue emitting sion phosphor |
KR101163902B1 (ko) * | 2010-08-10 | 2012-07-09 | 엘지이노텍 주식회사 | 발광 소자 |
KR101077990B1 (ko) * | 2010-02-12 | 2011-10-31 | 삼성엘이디 주식회사 | 형광체, 발광장치, 면광원장치, 디스플레이 장치 및 조명장치 |
JP5129283B2 (ja) * | 2010-03-09 | 2013-01-30 | 株式会社東芝 | 蛍光体、蛍光体の製造方法、発光装置及び発光モジュール |
KR101625911B1 (ko) | 2010-03-10 | 2016-06-01 | 삼성전자주식회사 | 광효율이 개선된 led 장치 |
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EP2636718A2 (en) | 2013-09-11 |
CN103311413A (zh) | 2013-09-18 |
US8836211B2 (en) | 2014-09-16 |
EP2636718B1 (en) | 2015-01-07 |
TW201401570A (zh) | 2014-01-01 |
JP2013187485A (ja) | 2013-09-19 |
TWI489659B (zh) | 2015-06-21 |
US20130234584A1 (en) | 2013-09-12 |
KR20130103360A (ko) | 2013-09-23 |
CN103311413B (zh) | 2015-11-18 |
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