JP5636304B2 - 薄膜トランジスタ回路基板及びその製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims description 119
- 239000004065 semiconductor Substances 0.000 claims description 71
- 239000011229 interlayer Substances 0.000 claims description 69
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Description
絶縁基板上に酸化物半導体薄膜を形成し、前記酸化物半導体薄膜の第1領域上に積層されたゲート絶縁膜及びゲート電極を形成するとともに、前記酸化物半導体薄膜の前記第1領域を挟んだ両側に位置する第2領域及び第3領域を前記ゲート絶縁膜から露出し、前記酸化物半導体薄膜の前記第2領域及び前記第3領域、前記ゲート絶縁膜、及び、前記ゲート電極を覆う窒化シリコン(SiN)からなる層間絶縁膜を形成し、前記層間絶縁膜に、前記第2領域に到達する第1コンタクトホール及び前記第3領域に到達する第2コンタクトホールを形成し、前記第1コンタクトホールから前記第2領域にコンタクトしたソース電極、及び、前記第2コンタクトホールから前記第3領域にコンタクトしたドレイン電極を形成する、ことを特徴とする薄膜トランジスタ回路基板の製造方法が提供される。
絶縁基板上に形成され、第1領域と、前記第1領域を挟んだ両側に形成され前記第1領域よりも低抵抗な第2領域及び第3領域と、を有する酸化物半導体薄膜と、前記酸化物半導体薄膜の前記第1領域上に形成されるとともに前記第2領域及び前記第3領域を露出するゲート絶縁膜と、前記ゲート絶縁膜の上に形成されたゲート電極と、前記酸化物半導体薄膜の前記第2領域及び前記第3領域、前記ゲート絶縁膜、及び、前記ゲート電極を覆うとともに、前記第2領域に到達する第1コンタクトホール及び前記第3領域に到達する第2コンタクトホールが形成された窒化シリコン(SiN)からなる層間絶縁膜と、前記第1コンタクトホールから前記第2領域にコンタクトしたソース電極と、前記第2コンタクトホールから前記第3領域にコンタクトしたドレイン電極と、を備えたことを特徴とする薄膜トランジスタ回路基板が提供される。
10…絶縁基板
12…ゲート絶縁膜
13…第1層間絶縁膜
14…第2層間絶縁膜
A…薄膜トランジスタ
SC…酸化物半導体薄膜
SCC…第1領域(チャネル領域;高抵抗領域)
SCS…第2領域(ソース領域;低抵抗領域)
SCD…第3領域(ドレイン領域;低抵抗領域)
G…ゲート電極 S…ソース電極 D…ドレイン電極
Claims (6)
- 絶縁基板上に酸化物半導体薄膜を形成し、
前記酸化物半導体薄膜の第1領域上に積層されたゲート絶縁膜及びゲート電極を形成するとともに、前記酸化物半導体薄膜の前記第1領域を挟んだ両側に位置する第2領域及び第3領域を前記ゲート絶縁膜から露出し、
前記酸化物半導体薄膜の前記第2領域及び前記第3領域、前記ゲート絶縁膜、及び、前記ゲート電極を覆う窒化シリコン(SiN)からなる層間絶縁膜を形成し、
前記層間絶縁膜に、前記第2領域に到達する第1コンタクトホール及び前記第3領域に到達する第2コンタクトホールを形成し、
前記第1コンタクトホールから前記第2領域にコンタクトしたソース電極、及び、前記第2コンタクトホールから前記第3領域にコンタクトしたドレイン電極を形成する、薄膜トランジスタ回路基板の製造方法であって、
前記層間絶縁膜は、単層もしくは積層構造とし、少なくとも前記酸化物半導体薄膜の上は、シリコンのダングリングボンドを含む窒化シリコンからなり、前記窒化シリコンと前記酸化物半導体薄膜とが接触する領域で前記窒化シリコンの底面側の酸素濃度がその中心部分の酸素濃度よりも高いことを特徴とする薄膜トランジスタ回路基板の製造方法。 - 前記層間絶縁膜は、プラズマCVD法を用いて形成することを特徴とする請求項1に記載の薄膜トランジスタ回路基板の製造方法。
- 前記層間絶縁膜によって覆われた前記酸化物半導体薄膜において、前記第2領域及び前記第3領域の酸素濃度は、前記第1領域の酸素濃度よりも低いことを特徴とする請求項1または2に記載の薄膜トランジスタ回路基板の製造方法。
- 前記酸化物半導体薄膜は、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)の少なくとも1つを含む酸化物によって形成されたことを特徴とする請求項1乃至3のいずれか1項に記載の薄膜トランジスタ回路基板の製造方法。
- 絶縁基板上に形成され、第1領域と、前記第1領域を挟んだ両側に形成され前記第1領域よりも低抵抗な第2領域及び第3領域と、を有する酸化物半導体薄膜と、
前記酸化物半導体薄膜の前記第1領域上に形成されるとともに前記第2領域及び前記第3領域を露出するゲート絶縁膜と、
前記ゲート絶縁膜の上に形成されたゲート電極と、
前記酸化物半導体薄膜の前記第2領域及び前記第3領域、前記ゲート絶縁膜、及び、前記ゲート電極を覆うとともに、前記第2領域に到達する第1コンタクトホール及び前記第3領域に到達する第2コンタクトホールが形成された窒化シリコン(SiN)からなる層間絶縁膜と、
前記第1コンタクトホールから前記第2領域にコンタクトしたソース電極と、
前記第2コンタクトホールから前記第3領域にコンタクトしたドレイン電極と、
を備え、
前記層間絶縁膜は、単層もしくは積層構造とし、少なくとも前記酸化物半導体薄膜の上は、シリコンのダングリングボンドを含む窒化シリコンからなり、前記窒化シリコンと前記酸化物半導体薄膜とが接触する領域で前記窒化シリコンの底面側の酸素濃度がその中心部分の酸素濃度よりも高いことを特徴とする薄膜トランジスタ回路基板。 - 前記酸化物半導体薄膜において、前記第2領域及び前記第3領域の酸素濃度は、前記第1領域の酸素濃度よりも低いことを特徴とする請求項5に記載の薄膜トランジスタ回路基板。
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JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP5015471B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
JP2009042255A (ja) * | 2007-08-06 | 2009-02-26 | Hitachi Displays Ltd | 液晶表示装置 |
JP5704790B2 (ja) * | 2008-05-07 | 2015-04-22 | キヤノン株式会社 | 薄膜トランジスタ、および、表示装置 |
KR20160063402A (ko) * | 2008-09-12 | 2016-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 디스플레이 장치 |
JP4844627B2 (ja) | 2008-12-24 | 2011-12-28 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
JP5328414B2 (ja) | 2009-02-25 | 2013-10-30 | 富士フイルム株式会社 | トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置 |
JPWO2010098100A1 (ja) * | 2009-02-27 | 2012-08-30 | 株式会社アルバック | トランジスタ、トランジスタの製造方法及びその製造装置 |
US8202769B2 (en) * | 2009-03-11 | 2012-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5636304B2 (ja) * | 2011-02-08 | 2014-12-03 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ回路基板及びその製造方法 |
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US9123588B2 (en) | 2015-09-01 |
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US8710498B2 (en) | 2014-04-29 |
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