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JP5659663B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP5659663B2
JP5659663B2 JP2010216494A JP2010216494A JP5659663B2 JP 5659663 B2 JP5659663 B2 JP 5659663B2 JP 2010216494 A JP2010216494 A JP 2010216494A JP 2010216494 A JP2010216494 A JP 2010216494A JP 5659663 B2 JP5659663 B2 JP 5659663B2
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Prior art keywords
bonding
electrode
semiconductor device
bonding layer
front surface
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Expired - Fee Related
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JP2010216494A
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JP2012074433A (ja
Inventor
飯塚　祐二
祐二 飯塚
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Priority to JP2010216494A priority Critical patent/JP5659663B2/ja
Priority to US13/200,377 priority patent/US20120074563A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • H—ELECTRICITY
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
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Description

この発明は、パワー半導体デバイスを用いた半導体装置とその製造方法に関するものである。
パワー半導体デバイスは、半導体モジュールに組み込まれて半導体装置を構成し、電力変換装置のスイッチングデバイスとして用いられる。
半導体装置としての半導体モジュールの構造を図５に示す。
図５において、良伝導体の材質で作られたヒートシンク（放熱ベース）３の上に絶縁基板２を固着している。絶縁基板２は、セラミック基板２ｂの一方の面（裏面）に裏面側パターン２ａが、他方の面（おもて面）に導体パターン２ｃが形成されていて、裏面側パターン２ａがヒートシンクに接合されている。
パワー半導体デバイスとしての半導体チップ１は、その裏面電極が絶縁基板２の導体パターン２ｃに接合される。半導体チップ１のおもて面電極は、アルミワイヤ５を介して絶縁基板２の導体パターン２ｃや図示しない外部導出端子に接続される。
そして、この半導体チップ１、絶縁基板２、ヒートシンク３の接合体は、樹脂ケース６に格納され、放熱フィン４に組み付けられる。
近年、省電力を志向した再生可能な発電設備が普及しつつあり、このような発電設備に適用する電力変換装置へのニーズが高まっている。そして、この電力変換装置に用いられる半導体モジュールには、大容量化が求められている。
図５に示した半導体モジュールでは、半導体チップ１のおもて面電極と導体パターンあるいは外部導出端子との接続にはアルミワイヤ５が用いられている。図５の半導体モジュールを上記の電力変換装置に適用した場合、大電流通電動作時の信頼性は、アルミワイヤ５などの配線材と半導体チップ１との接合強度で律速される。
特に、近年適用が進む高温動作可能な化合物半導体の適用においては、特に半導体チップ１の高温動作に耐える接合構造が求められる。
そこで、半導体チップのおもて面電極と外部導出端子との接続に、図５のようなアルミワイヤに代えて、絶縁性の部材にポスト状の電極を形成した接続部材を用いることが提案されている（特許文献１，２参照）
特開２００６−２３７４２９号公報（図１など） 特開２００９−６４８５２号公報（図１など）
図５に示した半導体モジュールでは、アルミワイヤを用いているため、大電流を通電したときにアルミニウムワイヤが発熱する。この発熱によりアルミニウムワイヤと半導体チップ１のおもて面電極との接合箇所に、両者の熱膨張係数の相違に伴うストレスが印加されるという問題がある。
また、特許文献１，２に記載された構成においては、ポスト状の電極を半導体チップのおもて面電極に確実に接合するのが難しいという課題がある。
本発明の目的は、ポスト状の電極を用いて大電流を通電した際の熱ストレスを緩和するとともに、このポスト状電極を確実に半導体チップの電極に接合できる半導体装置とその製造方法を提供することにある。
本発明では、半導体チップのおもて面電極にポスト電極を接合するにあたり、前記おもて面電極側の端部に面取りされた部分を有するポスト電極を準備し、前記半導体チップのおもて面電極とポスト電極との接合面の少なくとも一方に、有機被膜で保護された金属粒子を塗布し、前記半導体チップのおもて面電極とポスト電極との間を加圧するとともに加熱して、前記有機被膜を破壊して前記金属粒子を露出させてこの金属粒子を活性接合させた接合材を第１の接合層とし、前記第１の接合層の周囲に、前記加熱より高温の再加熱によって液相化する接合材を液相化させて、前記半導体チップのおもて面電極，前記ポスト電極の面取りされた部分，前記第１の接合層に接合する第２の接合層を形成し、前記おもて面電極とポスト電極とを接合するものとする。
そして、前記活性接合した金属粒子の接合材にポーラスを形成して第１の接合層とし、前記第１の接合層の周囲に、前記加熱より高温の再加熱によって液相化する接合材を液相化させて、前記半導体チップのおもて面電極，前記ポスト電極，前記第１の接合層に接合する第２の接合層を形成し、前記ポーラスに液相化された前記第２の接合層を浸透させるものとする。
さらに、前記再加熱によって液相化する接合材は鉛を含まないハンダ材であり、前記再加熱の温度は、前記ハンダ材の固相線温度より高い温度とする。
本発明によれば、半導体装置の生産性を損なわず、電力変換装置の大容量化を効率良く行うことができる。
第１の実施例を示す図である。 第２の実施例を示す図である。 第３の実施例を示す図である。 第２，第３の実施例における後加熱後の状態を示す図である。 従来例を示す図である。
以下、図に沿って本発明を実施するための最良の形態を説明する。
（実施例１）
図１はこの発明の第１の実施例を示す図である。図１（ａ）は全体の構成を、同図（ｂ）は、同図（ａ）の点線で囲んだ領域Ａの拡大図である。図１において、１は半導体チップであって、接合材１０を介して絶縁基板の導体パターン２ｃに接合されている。絶縁基板の絶縁層については図示を省略した。
ここで、半導体チップとしては、ＩＧＢＴやＭＯＳＦＥＴなどのスイッチング素子や、フリーホイーリングダイオード（FWD）などがある。また、これらの半導体チップは、シリコン基板に形成したものの他、炭化珪素（ＳｉＣ）基板や窒化ガリウム（ＧａＮ）基板などの化合物基板上に形成したものなどを用いることができる。
９は配線基板の絶縁層であり、その少なくとも一方の面には導体パターン１１が形成されている。配線基板にはスルーホールが形成されていて、スルーホールには導電体のポスト電極１５が設けられている。ポスト電極１５は導体パターン１１に接続される。図１に示したポスト電極は、共通の導体パターン１１に接続されているが、回路構成に応じて、別の導体パターン１１に接続することもできる。
また、図１の例では、スルーホールの側面にも導体パターン１１が形成されていて、導体パターン１１とポスト電極１５との接続を確実に行なっている。
１３は、ポスト電極１５と半導体チップ１のおもて面電極（図示せず）とを接合するための接合材である。接合層１３は、直径が数ｎｍ〜数１００ｎｍ程度の極めて微細な金属粒子が固相間で活性接合した接合層である。
次に、図１に示した、半導体装置の製造方法について説明する。
まず絶縁基板の導体パターン２ｃ上に接合材１０を介して半導体チップ１を固着する。そして、半導体チップのおもて面電極上の所定箇所もしくは、配線基板の金属ポストの半導体チップとの接合箇所、あるいはその双方に、接合層１３となる接合材１３’を塗布する（未硬化の接合材１３’の状態は図示せず）。
この接合材１３’は、直径が数ｎｍ〜数１００ｎｍ程度の極めで微細な金属粒子と、個々の粒子の表面を保護する有機被膜（表面保護膜）と、接合材１３’の取り扱いを容易とするための揮発性のバインダー材から構成される。接合材１３’は、接合前（加熱前）の状態では、例えばクリーム状であるので、ディスペンサなどを用いて、接合部の所望箇所に所望量を滴下（もしくは描画）することができる。
本実施例においては、半導体チップ１のおもて面電極の表面もしくはポスト電極１５の半導体チップとの接合箇所、あるいはその双方に、接合材１３’を塗布する。
次に、ポスト電極１５半導体チップ１のおもて面電極上に来るように位置あわせをして配線基板を半導体チップ１上に載置する。
続いて、配線基板もしくはポスト電極１５に加重を印加し、ポスト電極１５と半導体チップ１のおもて面電極との間の接合材１３’を加圧する。そして、この状態で炉に入れて、あるいは局所的に加熱して、接合箇所を２００℃〜２５０℃に加熱する。
加熱により、接合材１３’のバインダー成分が揮発し、さらに、金属粒子の表面保護膜が加熱分解して金属粒子の表面が露出する。この金属粒子は、加熱によって表面保護膜が分解されると金属粒子の表面が露出し、活性化した金属粒子同士、および金属粒子と、ポスト電極１５，半導体チップのおもて面電極との間で溶着，焼結 が進行し粒子表面の接合活性が向上する。すなわち、緻密な固相間の活性接合を利用して、稠密な接合膜１３を形成する。
この金属粒子は、Ａｕ，Ａｇ，Ｃｕ，Ｐｄ，Ｐｔなどの貴金属に分類される純物質でも、Ａｇ−Ｐｄ，Ａｕ−Ｓｉ，Ａｕ−Ｇｅ，Ａｕ−Ｃｕなどの合金組成のどちらでもよい。
例えば、貴金属の純物質の場合、上記のように２００℃〜２５０℃の加熱で強固な接合層（焼結層）を形成することができるが、一旦接合した後は、その金属元来の融点（８００〜１１００℃程度）の耐熱性を有する構造となる。また、合金組成の場合も同様に、接合後は、２８０℃〜７００℃程度の耐熱性を有する構成となる。
なお、半導体チップ１のおもて面電極とポスト電極と接合する工程で２００℃〜２５０℃に加熱されるため、半導体チップ１を絶縁基板の導体パターンに接合に使用する接合材１０は、この加熱に堪えられるような材料を用いる。
このようにして、半導体チップ１とポスト電極とを強固に接合することができる。
（変形例１）
上記の第１の実施例では、半導体チップ１を絶縁基板の導体パターンに接合した後に、半導体チップ１のおもて面電極とポスト電極とを金属粒子によって接合したが、半導体チップ１の裏面電極（図示せず）絶縁基板の導体パターン２ｃとの接合にも適用することができる。
すなわち、図１の接合材１０にも接合材１３’を用いることができる。まず、絶縁基板の導体パターン２ｃの所望の位置に接合材１３’を塗布して半導体チップ１を載置する。続いて、半導体チップ１のおもて面電極にも接合材１３’を塗布し、ポスト電極の位置を合わせて配線基板を載置する。そして、配線基板（またはポスト電極）に加重を印加し、
絶縁基板の導体パターン２ｃと半導体チップ１の裏面電極との間、及び半導体チップ１のおもて面電極とポスト電極との間の接合材１３’を同時に焼結させて接合層を形成するようにしてもよい。
（実施例２）
図２は、この発明の第２の実施例を示す図である。図２（ａ）は全体の構成を、同図（ｂ）は、同図（ａ）の点線で囲んだ領域Ｂの拡大図である。図１に示した第１の実施例と共通する部分には同じ符号を付して、詳しい説明は省略する。
図１に示した例との相違点は、ポスト電極の露出した側面に、予め第２接合材１２を設けている点である。
半導体チップ１は、絶縁基板２の導体パターン２ｃに固着される。そして、半導体チップ１のおもて面電極に第１の接合材１３’を塗布し、第１の実施例と同様に、半導体チップ１のおもて面電極とポスト電極との間に接合層１３を形成して両者を接合する。
図２に示す第２の接合材１２は、例えば、Ｓｎ−Ａｇ，Ｓｎ−Ａｇ−Ｃｕ，Ｓｎ−Ｓｂ，Ｂｉ，Ｂｉ−Ａｇ，Ｂｉ−Ｃｕなどの非鉛系ハンダとして一般的なペースト材を用いる。
このような第２の接合材１２をポスト電極の露出した側面に予め塗布しておく。そして、第１の接合材による上記の接合が完了した後、今度は非加圧の状態で２６０℃〜３３０℃の加熱を行なうべく、リフロー通炉を行う。
第２の接合材１２は、リフロー加熱により液相化し、ポスト電極の側面を伝って、第１の接合材１３’による接合層１３の部分の側面にぬれ広がる。
図４は、この発明の第２の実施例と、後述の第３の実施例における接合後の様子を示す図であり、図４（ａ）は全体の構成を、同図（ｂ）は、同図（ａ）の点線で囲んだ領域Ｄの拡大図である。
図４に示すように、第２の接合材１２は、リフロー加熱により液相化し、ポスト電極の側面を伝ってフィレット状の端部保持構造を形成する。この第２の接合材１２により、接合層１３の結合が疎（ポーラス）な部分に浸透する。そして、接合層１３，ポスト電極１５,半導体チップ１が接合材１２によって一体化されるため、結合が強化された構造となる。
なお、第２の接合材１２上記のように非鉛系ハンダを用い、ペースト状のハンダを塗布してもよいし、導体パターン１１の表面膜としてスパッタもしくはメッキなどで予め形成しておいてもよい。
（実施例３）
図３は、この発明の第３の実施例を示す図である。図３（ａ）は全体の構成を、同図（ｂ）は、同図（ａ）の点線で囲んだ領域Ｃの拡大図である。図２に示した第２の実施例と共通する部分には同じ符号を付して、詳しい説明は省略する。
図２に示した例との相違点は、第２の接合材を半導体チップのおもて面電極上に塗布した点である。この第２の接合材は、第２の実施例と同様に非鉛系のハンダである。
そのほかは、第２の実施例と同様に、半導体チップ１のおもて面電極に第１の接合材１３’を塗布し、第１の実施例と同様に、半導体チップ１のおもて面電極とポスト電極との間に接合層１３を形成して両者を接合する。
そして、第１の接合材による上記の接合が完了した後、今度は非加圧の状態で２６０℃〜３３０℃の加熱を行なうべく、リフロー通炉を行う。
第２の接合材１２は、リフロー加熱により液相化し、半導体チップ１のおもて面電極上を濡れ広がって図４に示すように、第１の接合材１３’による接合層１３の部分の側面にぬれ広がるとともに、フィレット状の端部保持構造を形成する。この第２の接合材１２により、接合層１３の結合が疎（ポーラス）な部分に含浸する。そして、接合層１３，ポスト電極１５,半導体チップ１が接合材１２によって合一体化されるため、結合が強化された構造となる。
なお、第２の接合材１２上記のように非鉛系ハンダを用い、ペースト状のハンダを塗布してもよいし、導体パターン１１の表面膜としてスパッタもしくはメッキなどで予め形成しておいてもよい。
ここで、上記の第２，第３の実施例について、第１の接合材１３に純銀（Ａｇ）の粒子を用いた例を説明する。
純銀の粒子を用いた接合材は、現在実用化が進んでいて、直径が数ｎｍ〜数１００ｎｍの純銀粒子（ナノ粒子）を用いている。
この純銀の粒子を用いた接合材を用いた場合、半導体チップのおもて面電極とポスト電極との接合には、接合部を２５０℃付近まで加熱する。これにより純銀の粒子（ナノ粒子）間の粉体結合（焼結）が形成される。
第１の実施例のように、純銀粒子のみの接合であっても、半導体チップのおもて面電極とポスト電極とは強固に接合されている。
しかしながら、接合層１３の周辺部分に疎な欠陥が存在する場合がある。
そこで、第２，第３の実施例のように、第２の接合材として、Ｂｉ−２．５Ａｇなどの融点が２７１℃の非鉛ハンダを、予めポスト電極の側面もしくは半導体チップのおもて面電極に塗布しておき、接合層１３による接合後、上記のハンダを溶融させて液相接合を行えば、ポスト電極の側面もしくは半導体チップのおもて面電極に膜状に濡れ広がる。そして、接合層１３のポーラスな欠陥に溶融したハンダが浸透拡散する。さらに、Ａg粒子とハンダとの界面において、両者の金属間接合を形成するので、接合層１３で接合された一体化の状態をさらに強化する構造となる。
なお、図１〜４の各例において、１６は半導体チップの表面に形成されたパッシベーション層もしくはレジスト層である。
特に図２〜４に示す例では、溶融した第２の接合材としてのハンダが意図しない箇所に付着するのを防ぐハンダダムとして機能する。
また、上記の図１〜４に図示したように、ポスト電極１５の、半導体チップのおもて面電極側の面について、端部を面取りしている。このように、面取りを行なうことで、接合材１３’を挟んでポスト電極１５と半導体チップのおもて面電極側の面との間を加圧したときの加圧力が、接合面に集中しやすくなる。加圧力が集中することで、ポスト電極１５と半導体チップのおもて面電極側の面との間の接合をより強固なものとすることができる。
特に、図２〜４に示す例では、溶融した第２の接合材としてのハンダがポスト電極１５に這い上がりやすくなり、ハンダフィレットを形成し、ポスト電極１５と半導体チップのおもて面電極側の面との間の接合をより強固なものとすることができる。
１：半導体チップ
２：絶縁基板
２ｃ：導体パターン
１０：接合材
１１：導体パターン
１２：第２の接合材
１３：接合層
１５：ポスト電極

Claims (10)

  1. おもて面電極を有する半導体チップと、面取りされた端部を有するポスト電極と、活性結合した金属粒子を有し前記おもて面電極と前記面取りされた端部を接合する接合層と、前記接合層の周囲を覆うハンダを備え、前記ポスト電極の面取りされた部分に前記ハンダが這い上がっていることを特徴とする半導体装置。
  2. おもて面電極を有する半導体チップと、端部を有するポスト電極と、活性結合した金属粒子を有し前記おもて面電極と前記端部を接合する接合層と、前記接合層の周囲を覆うハンダを備え、前記接合層はポーラスを有しており、前記ハンダが前記ポーラスを埋めていることを特徴とする半導体装置。
  3. 請求項１に記載の半導体装置において、前記接合層はポーラスを有しており、前記ハンダが前記ポーラスを埋めていることを特徴とする半導体装置。
  4. 請求項１ないし請求項３のいずれか一項に記載の半導体装置において、前記金属粒子は、Ag, Pd, Cu, Au, Ag-Cu, Ag-Pd, Au-Si, Au-Geの少なくとも１種類から選択した金属粉体であることを特徴とする半導体装置。
  5. 請求項１ないし請求項３のいずれか一項に記載の半導体装置において、前記ハンダは、Sn, Sn-Ag, Sn-Ag-Cu, Sn-Sb, Bi, Bi-Ag, Bi-Cu, Bi-Ag-Sbの少なくとも１種類から選択した鉛をふくまないハンダ材であること特徴とした半導体装置。
  6. 半導体チップのおもて面電極にポスト電極を接合してなる半導体装置の製造方法において、
    前記おもて面電極側の面の端部に面取りされた部分を有するポスト電極を準備し、前記半導体チップのおもて面電極と前記ポスト電極の端部の少なくとも一方に、有機被膜で保護された金属粒子を塗布し、前記半導体チップのおもて面電極と前記ポスト電極との間の前記金属粒子を加圧するとともに加熱して、前記有機被膜を破壊して前記金属粒子を露出させてこの金属粒子を活性接合させた接合材を第１の接合層とし、前記第１の接合層の周囲に、前記加熱より高温の再加熱によって液相化する接合材を液相化させて、前記半導体チップのおもて面電極，前記ポスト電極の面取りされた部分，前記第１の接合層に接合する第２の接合層を形成し、前記おもて面電極と前記ポスト電極とを接合することを特徴とする半導体装置の製造方法。
  7. 半導体チップのおもて面電極にポスト電極を接合してなる半導体装置の製造方法において、
    前記半導体チップのおもて面電極と前記ポスト電極の端部の少なくとも一方に、有機被膜で保護された金属粒子を塗布し、前記半導体チップのおもて面電極と前記ポスト電極との間の前記金属粒子を加圧するとともに加熱して、前記有機被膜を破壊して前記金属粒子を露出させてこの金属粒子を活性接合させた接合材にポーラスを形成して第１の接合層とし、前記第１の接合層の周囲に、前記加熱より高温の再加熱によって液相化する接合材を液相化させて、前記半導体チップのおもて面電極，前記ポスト電極，前記第１の接合層に接合する第２の接合層を形成し、前記ポーラスに液相化された前記第２の接合層を浸透させ、前記おもて面電極と前記ポスト電極とを接合することを特徴とする半導体装置の製造方法。
  8. 請求項６に記載の半導体装置の製造方法において、前記活性接合した金属粒子の接合材にポーラスを形成して第１の接合層とし、前記ポーラスに液相化された前記第２の接合層を浸透させることを特徴とする半導体装置の製造方法。
  9. 請求項６ないし請求項８のいずれか一項に記載の半導体装置の製造方法において、前記再加熱によって液相化する接合材は鉛を含まないハンダ材であり、前記再加熱の温度は、前記ハンダ材の固相線温度より高いことを特徴とする半導体装置の製造方法。
  10. 請求項６ないし請求項８のいずれか一項に記載の半導体装置の製造方法において、前記前記再加熱によって液相化する接合材は、前記ポスト電極の前記第１の接合層で接合される部位以外の露出部または前記半導体チップのおもて面電極の前記第１の接合層で接合される部位以外の露出部に予め配置しておき、前記再加熱によって溶融させることを特徴とする半導体装置の製造方法。
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