JP5577897B2 - Electronic device and manufacturing method thereof - Google Patents

Description

  The present invention relates to an electronic device and a manufacturing method thereof.

  In a semiconductor device such as an IC mounted on an electronic device, a cooling mechanism is provided in order to efficiently remove heat generated during operation and continuously operate with high reliability. In particular, servers and personal computers use CPUs (Central Processing Units) that generate a great deal of heat, so heat can be efficiently used to maintain the proper temperature environment inside the enclosure and at the installation site. It is preferred to use a cooling mechanism that can be removed.

  Examples of the cooling mechanism include an air cooling method using a heat sink with a fan and a liquid example method in which a cooling fluid is circulated by a mechanical pump.

  Among these, the air cooling method is widely spread from the viewpoints of technology maturity, running cost, reliability, and the like.

  On the other hand, the liquid cooling method has the advantage that the cooling performance can be easily controlled by adjusting the flow rate of the cooling fluid, and the advantage that the removed heat can be concentrated in one place and the space can be saved. .

JP 2006-148117 A Special table 2008-509550 gazette JP 2007-12722 A

  It is an object of the present invention to increase cooling efficiency in an electronic device and a manufacturing method thereof.

According to one aspect of the following disclosure, a substrate having a plurality of grooves formed on the surface, and an electronic component having a main surface connected to the surface of the substrate via polyparaxylylene , A surface through which the cooling fluid passes is defined by the surface and the groove, and an electronic device in which the polyparaxylylene is present on the inner surface of the groove is provided.

According to another aspect of the disclosure, a step of preparing a substrate having a plurality of grooves formed on the surface, and forming a polyparaxylylene thin film on the surface and the inner surface of the grooves, and the polyparaxylylene While heating the thin film, the main surface of the electronic component is pressed against the polyparaxylylene thin film on the surface of the substrate to connect the substrate and the electronic component via the polyparaxylylene thin film. An electronic device manufacturing method is provided.

According to the following disclosure, the base body through which the cooling fluid flows and the electronic component can be easily connected with polyparaxylylene . Further, since the passage of the cooling fluid is defined by the main surface of the electronic component and the groove of the substrate, the cooling fluid comes into direct contact with the electronic component, and the cooling efficiency by the cooling fluid is improved.

FIG. 1 is a perspective view of a model used in the simulation. 2A and 2B are diagrams showing the results of simulation. FIG. 3 is a cross-sectional view of a structure in which a cooling fluid directly contacts an electronic component. FIG. 4 is an overall configuration diagram of the cooling system according to the first embodiment. FIGS. 5A to 5C are cross-sectional views (part 1) in the middle of manufacturing the electronic device according to the first embodiment. 6A to 6C are cross-sectional views (part 2) in the course of manufacturing the electronic device according to the first embodiment. FIG. 7 is a perspective view of the heat transfer body according to the first embodiment. FIG. 8 is a configuration diagram of a vapor deposition apparatus used in the first embodiment. FIG. 9 is a perspective view of the electronic device according to the first embodiment. FIG. 10 is a diagram showing the relationship between the final treatment on the silicon surface and the contact angle of water on the surface. 11, the contact angle of water on poly-para-xylylene on the thin film is a graph obtained by investigating how changes to the by polyparaxylylene film having a thickness or pattern shape. 12A and 12B are cross-sectional views in the middle of manufacturing the electronic device according to the second embodiment. FIG. 13 is a configuration diagram of an apparatus used in the oxygen plasma processing of the second embodiment. 14A to 14C are cross-sectional views of the electronic device device according to the third embodiment in the middle of manufacture. FIGS. 15A and 15B are cross-sectional views when the area of the polyparaxylylene thin film is adjusted by the size of the resist droplets in the third embodiment. FIG. 16 is a cross-sectional view (part 1) of an electronic device according to another embodiment. 17A and 17B are cross-sectional views (part 2) of an electronic device according to another embodiment.

  Prior to the description of the present embodiment, a preliminary matter as a basis will be described.

  In a cooling mechanism using the liquid example method, a cooling base called a microchannel chip is brought into contact with a heat source such as a CPU, and a cooling fluid is caused to flow through a channel formed inside the microchannel chip. The generated heat is transported by the cooling fluid and radiated to the outside.

  When the width of each of the plurality of channels of the microchannel chip is reduced, the surface area where the cooling fluid and the channel come into contact increases, and the heat of the microchannel chip can be efficiently transported by the cooling fluid.

  In particular, in a microchannel having a width of 1 mm or less, the flow of the cooling fluid becomes a laminar flow, and the influence of the surface force becomes larger than the body force. It is known that the cooling fluid having such characteristics has an increased thermal conductivity even at a small flow rate.

  Thereby, when the microchannel is used, the heat generated from the heat source can be efficiently transported by the cooling fluid, and the cooling performance of the cooling mechanism can be improved. Further, in such a microchannel, since the channel width is fine, an effect that the cooling mechanism can be miniaturized can be obtained. Further, since the amount of the cooling fluid used is small, there is an effect that the design freedom of the moving area and the storage area of the cooling fluid is improved.

  The inventor of the present application performed a simulation on the cooling performance of the cooling mechanism using such a microchannel.

  FIG. 1 is a perspective view of a model used in the simulation.

  As shown in FIG. 1, the model is formed by forming three microchannels 1a on a microchannel chip 1 made of silicon.

  In the simulation, when the heat source is in contact with the lower surface 1b of the microchannel chip 1, the thermal resistance of water flowing through the microchannel 1a was calculated. The calculation was performed in two ways by changing the distance T between the lower surface 1b and each microchannel 1a.

  The results are shown in FIGS. 2 (a) and 2 (b).

  Among these, FIG. 2A shows the result when the above-mentioned interval T is 160 μm, and FIG. 2B shows the result when the interval T is 10 μm.

  As shown in these figures, it was found that the smaller the interval T, the smaller the thermal resistance of water and the better the cooling performance. Therefore, in order to further improve the cooling performance, it is ideal that the heat source and the microchannel 1a are in contact with each other by setting the interval T to zero.

  FIG. 3 is a cross-sectional view of such a structure.

  In the example of FIG. 3, a plurality of grooves 5a are formed in the microchannel chip 5, and the surface 5b of the microchannel chip 5 is brought into contact with the main surface 6a of the electronic component 6 such as a CPU. In this case, the microchannel through which the cooling fluid flows is defined by the groove 5a and the main surface 6a, and the electronic component 6 comes into direct contact with the cooling fluid.

  According to such a structure, since the cooling fluid can directly take away the heat generated in the electronic component 6, the cooling efficiency is very good.

  However, creating this structure has several problems.

  For example, when the material of the microchannel chip 5 is silicon, in order to join the silicon appearing on the main surface 6a of the electronic component 6 and the microchannel chip 5, the bonding temperature of silicon is about 900 ° C. to 1000 ° C. It is necessary to heat the electronic component 6 to a high temperature. When heated to such a high temperature, the circuit of the electronic component 6 may be thermally damaged.

  In order to avoid such a problem, it is also conceivable to form a bonding material for bonding these between the surface 5 b of the microchannel chip 5 and the main surface 6 a of the electronic component 6. When the bonding material is interposed between the cooling medium and the main surface 6a, the bonding material hinders the heat sink of the electronic component 6 from the cooling medium. It is necessary to selectively form only the portion that contacts 5b.

  However, it is extremely difficult to selectively form a bonding material only on a predetermined portion of the main surface 6a.

  For example, it is conceivable to use anodic bonding glass as the bonding material, but since the anodic bonding glass is a single plate, it is difficult to form it only on a predetermined portion of the main surface 6a. Furthermore, when the microchannel chip 5 and the electronic component 6 are bonded through the anodic bonding glass, the anodic bonding glass must be heated to a temperature of about 300 ° C. to 600 ° C. and melted. The electronic component 6 is damaged by being exposed to high temperature.

  On the other hand, it is also conceivable to use polyimide resin or BCB resin as the bonding material. However, it is desirable to avoid applying these resins to new electronic components 6 if possible.

  In view of the above-described knowledge, the inventor of the present application has come up with an embodiment described below.

(First embodiment)
FIG. 4 is an overall configuration diagram of the cooling system according to the present embodiment.

  This cooling system is used in a building 10 such as a data center, and has a circulation unit 11 on a floor surface 25.

  A first circulation line 17 is connected to the circulation unit 11, and a cooling medium C such as water circulates between the server 14 and the circulation unit 11 by the pressure of the pump 13 connected to the line 17. The cooling medium C is used to cool the CPU mounted on the blade 19 in the server 14, and returns to the circulation unit 11 again after being warmed by the CPU.

  The circulation unit 11 is provided with a heat exchanger 12 for cooling the cooling medium C thus warmed. The cooling water W is supplied to the heat exchanger 12 from the outside of the building 10 through the second circulation line 18. Then, the cooling medium C warmed as described above is cooled by the cooling water W and supplied to the server 14 again.

  Next, a method for manufacturing an electronic device mounted on the blade 19 and subject to cooling by the cooling medium C will be described.

  5 and 6 are cross-sectional views of the electronic device according to the present embodiment during manufacture.

  First, as shown in FIG. 5A, a silicon substrate having a thickness of about 200 μm to 525 μm is prepared as a microchannel chip 30 used as a cooling substrate. The conductivity of the microchannel chip 30 is not particularly limited. A p-type impurity such as boron may be introduced into the silicon substrate, or an n-type impurity such as phosphorus or antimony may be introduced into the silicon substrate. .

  Further, an SOI (Silicon On Insulator) substrate may be used as the microchannel chip 30 instead of the silicon substrate. In that case, the thickness of the silicon layer of the SOI substrate is about 200 μm, the thickness of the silicon oxide film as the intermediate layer is about 1 μm, and the thickness of the silicon layer opposite to the above silicon layer is about It can be 525 μm.

  Subsequently, a photoresist 31 is applied to the surface 30 a of the microchannel chip 30. Although the material of the photoresist 31 is not particularly limited, in this embodiment, the rotational speed of a stage (not shown) on which the microchannel chip 30 is placed is set to about 2000 rpm, and the surface is made by Electronic Materials on the surface 30a. The photoresist 31 is applied by dropping AZP4620.

  Thereafter, the photoresist 31 is pre-baked at a substrate temperature of about 120 ° C.

  Next, as shown in FIG. 5B, the photoresist 31 is exposed and developed to form a resist pattern 32 having a plurality of windows 32a having a striped planar shape.

  Next, as shown in FIG. 5C, the microchannel chip 30 is anisotropically dry-etched using the resist pattern 32 as a mask, thereby forming a plurality of grooves 30 b in the microchannel chip 30.

The dry etching method is not particularly limited. In the present embodiment, this etching is performed using a DRIE (Deep Reactive Ion Etching) method in which an etching gas and a film forming gas are alternately supplied in an etching atmosphere. For example, SF ₆ gas is used as the etching gas, and C ₄ F ₈ gas is used as the film forming gas.

  The etching process by the DRIE method is sometimes called a Bosch process.

  According to the DRIE method, the etching proceeds while protecting the side surfaces of the grooves 30b with the film forming gas. Therefore, the etching does not easily proceed in the lateral direction, and the grooves 30b having a very high aspect ratio can be formed.

  In the present embodiment, taking advantage of the DRIE method, a high aspect ratio groove 30b having a depth of 360 μm and a width of 70 μm is formed.

  Further, as shown in the dotted circle in FIG. 5C, the etching gas and the deposition gas are alternately supplied to the side surface 30d of the groove 30b formed by the DREI method as described above. The minute unevenness is formed. The irregularities are sometimes called scallops.

  After the etching is finished, the resist pattern 32 is removed.

  FIG. 7 is a perspective view of the microchannel chip 30 in which a plurality of grooves 30b are formed as described above.

  As shown in FIG. 7, each groove 30 b extends in a direction parallel to the direction of the cooling fluid C flow.

Next, as shown in FIG. 6A, a polyparaxylylene thin film 33 having a thickness of about 1 μm is formed on the surface of the microchannel chip 30 by vapor deposition.

FIG. 8 is a configuration diagram of a vapor deposition apparatus used for forming the polyparaxylylene thin film 33.

  The vapor deposition apparatus 100 is, for example, LABCORTER PDS2010 manufactured by Specialty Coating Systems, and includes a main body 101 and a decompression chamber 104.

  Among these, inside the main body 101, a cell 102 containing the dimer 109 and a heating tube 103 for heating the vaporized dimer 109 are provided. In addition, a mounting table 105 for mounting the microchannel chip 30 is provided inside the chamber 104.

  In FIG. 8, only one chip 30 is mounted on one mounting table 105, but a plurality of chips 30 may be mounted on one mounting table 105.

In this embodiment, about 1.8 g of polyparaxylylene- C is used as the dimer 109. Instead of the polyparaxylylene -C, it may be used polyparaxylylene -D or polyparaxylylene -N. Among these, polyparaxylylene- C is more advantageous than other polyparaxylylene in that it hardly permeates water used as the cooling fluid C.

Then, the cell 102 is heated to about 175 ° C. to vaporize the dimer 109, and the temperature of the heating tube 103 is set to about 690 ° C. to decompose the vaporized dimer 109. Thereby, polyparaxylylene is polymerized on the surface of the microchannel chip 30, and the polyparaxylylene thin film 33 is conformally formed along the surface shape of the microchannel chip 30.

The polyparaxylylene thin film 33 can be adjusted by the amount of the dimer 109 put into the cell 102.

Subsequently, as shown in FIG. 6B, the polyparaxylylene thin film 33 is irradiated with a laser beam L to evaporate and remove the polyparaxylylene thin film 33 on the bottom surface 30c of the groove 30b. As a light source of the laser light L, for example, an excimer laser SIL300R manufactured by Sumitomo Heavy Industries is used. The power of the laser beam L is about 0.61 J / cm ² , and the bottom surface 30c of each groove 30b is irradiated with the laser beam L twice or more.

Here, the polyparaxylylene thin film 33 formed on the surface 30 a of the microchannel chip 30 is used later for connecting the electronic component and the microchannel chip 30, and therefore should not be removed in this step. . In order to prevent accidental removal, a mask (not shown) in which an aperture is formed is disposed above the microchannel chip 30, and the surface 30a is covered with the mask, and the laser L is irradiated into the groove 30b through the aperture. Is preferred.

In this step, it is not necessary to remove all the polyparaxylylene thin film 33 on the bottom surface 30c of the groove 30b, and the polyparaxylylene thin film 33 may remain on a part of the bottom surface 30c.

  Next, as shown in FIG. 6C, a semiconductor device such as a CPU is prepared as the electronic component 40.

Then, while heating the electronic component 40 and the microchannel chip 30 to about 180 ° C. with a heat source (not shown), the chip 30 is about 1 with the microchannel chip 30 placed on the main surface 40 a of the electronic component 40. Pressurize at a pressure of ² kgf / cm ² .

If such a state is maintained for about 30 minutes, the electronic component 40 and the microchannel chip 30 can be connected by the adhesive force of the polyparaxylylene thin film 33. The temperature required for the connection is a low temperature of about 180 ° C. to 200 ° C., and at such a temperature, there is little risk that the electronic component 40 such as the CPU is thermally damaged.

  Thus, the basic structure of the electronic device 50 according to this embodiment is completed.

FIG. 9 is a perspective view of the electronic device 50. In FIG. 9, the polyparaxylylene thin film 33 is omitted.

  In the electronic device 50, a microchannel (passage) through which the cooling fluid C passes is defined by the main surface 40a of the electronic component 40 and the groove 30b.

  According to this, since the cooling fluid C is in direct contact with the main surface 40a of the electronic component 40, the heat generated in the electronic component 40 can be efficiently taken away by the cooling fluid C, and the cooling efficiency is improved.

Further, as described with reference to FIG. 6A, the polyparaxylylene thin film 33 used for connecting the electronic component 40 and the microchannel chip 30 is formed in the microchannel chip 30 in advance. It is not necessary to form a polyparaxylylene thin film on the main surface 40a of the electronic component 40.

  Therefore, there is no need to form a bonding material on the main surface 40a in order to connect the electronic component 40 and the microchannel chip 30, or to remove the bonding material of the portion through which the cooling fluid flows from the main surface 40a. The electronic component 40 and the chip 30 can be easily connected.

  By the way, the easiness of flow of the cooling fluid C in the microchannel, the flow velocity thereof, and the like depend on the contact angle of the cooling fluid C on the surfaces of the main surface 40a and the groove 30b.

  The contact angle on the main surface 40a varies depending on what kind of processing is finally applied to the main surface 40a. In particular, when the electronic component 40 is purchased from another, the contact angle of the main surface 40a is known. Have difficulty.

  FIG. 10 is a diagram showing the relationship between the final treatment performed on the surface when the main surface 40a is a silicon surface and the contact angle of water on the surface. As shown in FIG. 10, the contact angle varies greatly depending on the type of final processing.

  On the other hand, the contact angle of the cooling fluid C on the surface of the groove 30b varies depending on the degree of unevenness on the surface.

  If the contact angles are different as described above, the easiness of flow of the cooling fluid C flowing through the microchannel determined by the groove 30b and the main surface 40a, the flow velocity, and the like are different for each completed device 50, and the cooling efficiency may vary. There is.

In view of this, in the present embodiment, as shown in FIG. 6 (b), by removing the polyparaxylylene film 33 in some area of the bottom surface 30c of the groove 30b, polyparaxylylene film 33 is The contact angle of the cooling fluid C is made different between the existing part and the non-existing part.

In this way, the flow rate of the cooling fluid C in the microchannel can be adjusted by changing the area from which the polyparaxylylene thin film 33 is removed, and variations in the cooling efficiency for each electronic device 50 can be suppressed.

  As a result, the cooling efficiency can be stabilized by flexibly adjusting the flow rate of the cooling fluid C regardless of the type of the electronic component 40, the degree of unevenness of the inner surface of the groove 30b, or the type of the cooling fluid C. Will be able to develop a wide variety of electronic devices.

In addition to the advantage that the contact angle of the cooling fluid C can be easily controlled as described above, the polyparaxylylene thin film 33 has an advantage that the electronic component 40 and the microchannel chip 30 can be easily bonded by heating. Therefore, it is suitable as a film that covers the chip 30.

The contact angle can also be controlled by the thickness of the polyparaxylylene thin film 33 and its pattern shape.

11, the contact angle of water on the polyparaxylylene film 33 is a graph obtained by investigating how changes to the by thickness and pattern of the polyparaxylylene film 33.

The pattern shape was examined two types of the "poly-para-xylylene pattern A", "poly-para-xylylene pattern B". Among these, the “ polyparaxylylene pattern A” is a pattern in which the width of the polyparaxylylene thin film 33 is 200 μm and the interval between adjacent polyparaxylylene thin films 33 is 50 μm. On the other hand, "polyparaxylylene pattern B", the interval of polyparaxylylene film 33 in which the width of the polyparaxylylene film 33 is adjacent 5 [mu] m is the pattern of 5 [mu] m.

  For comparison, FIG. 11 also shows a graph of the contact angle of water on the surface of silicon (Si).

As shown in FIG. 11, the contact angle of over polyparaxylylene film 33, regardless of the thickness and pattern of the polyparaxylylene film 33, becomes a greater value than on silicon.

Furthermore, as the thickness of the polyparaxylylene thin film 33 increases, the contact angle of water also increases.

From this result, in addition to the removal area of the polyparaxylylene film 33, by adjusting the thickness of the polyparaxylylene film 33 also it was found to be able to control the contact angle of the cooling fluid C in a microchannel .

(Second Embodiment)
In the first embodiment, as shown in FIG. 6B, a part of the polyparaxylylene thin film 33 is removed by irradiation with the laser beam L. On the other hand, in this embodiment, a part of the polyparaxylylene thin film 33 is removed using oxygen plasma as follows.

  12A and 12B are cross-sectional views in the middle of manufacturing the electronic device according to the present embodiment. In these drawings, the same elements as those described in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted below.

First, as shown in FIG. 12A, the microchannel chip 30 and the electronic component 40 are connected via the polyparaxylylene thin film 33 in the same manner as in FIG. 6C of the first embodiment.

Unlike the first embodiment, the polyparaxylylene thin film 33 in the groove 30b has not been removed yet at this stage.

Next, as shown in FIG. 12B, the microchannel chip 30 and the electronic component 40 are placed in an oxygen plasma processing chamber (not shown), and oxygen plasma is introduced into the groove 30b, thereby forming the groove 30b. A part of the polyparaxylylene thin film 33 on the inner surface is removed with oxygen plasma.

  As such an oxygen plasma processing apparatus, for example, PLASMA-SYSTEM 440 manufactured by Tepla Technics Plasma GmbH can be used. In this embodiment, the plasma power in the apparatus is set to 200 W, and this oxygen plasma treatment is performed for 80 seconds.

  As described above, unevenness called a scallop formed by etching by the DRIE method is formed on the side surface 30d (see the dotted circle) of the groove 30b.

Due to the scallops, the polyparaxylylene thin film 33 has a thick part and a thin part. In the oxygen plasma treatment, the thin polyparaxylylene thin film 33 is preferentially removed. . Thus, not all the polyparaxylylene thin film 33 on the inner surface of the groove 30b is removed, but only the polyparaxylylene thin film 33 in a partial region of the inner surface can be removed.

  Note that this oxygen plasma processing may be performed using an apparatus as shown in FIG. 13 instead of the above-described processing chamber for oxygen plasma processing.

  In the example of FIG. 13, first and second manifolds 51 and 52 made of silicon are connected to each of the microchannel chip 30 and the electronic component 40, and the oxygen plasma generator 53 is connected to the first manifold 51 via a pipe 54. Connect.

According to such a configuration, the oxygen plasma generated by the oxygen plasma generator 53 follows the same path as the cooling fluid and flows in the groove 30b, and a part of the polyparaxylylene thin film 33 in the groove 30b is removed. it can.

  Thus, the basic structure of the electronic device 60 according to this embodiment is completed.

In the present embodiment described above, as shown in FIG. 12B, a part of the polyparaxylylene thin film 33 is removed by oxygen plasma.

According to this, the contact angle of the cooling fluid C on the inner surface of the groove 30b can be changed depending on the location by controlling the area where the polyparaxylylene thin film 33 is removed depending on the processing time of the oxygen plasma treatment. As a result, the flow rate of the cooling fluid C in the microchannel can be adjusted, and variation in cooling efficiency for each electronic device 60 can be suppressed.

(Third embodiment)
Also in this embodiment, a part of the polyparaxylylene thin film 33 is removed by oxygen plasma as in the second embodiment. However, in this embodiment, the area from which the polyparaxylylene thin film 33 is removed is controlled by using a resist as a mask as follows.

  14A to 14C are cross-sectional views of the electronic device device according to the present embodiment during manufacture. In these drawings, the same elements as those described in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted below.

  First, the process shown in FIG.

First, by performing the steps of FIGS. 5A to 6A described in the first embodiment, a polyparaxylylene thin film 33 is formed on the surface of the microchannel chip 30 as shown in FIG. Get the structure.

Then, using a Ricoh inkjet printing apparatus IJP-1, a resist 61 is applied on the polyparaxylylene thin film 33 on the bottom surface 30c of each groove 30b.

  Note that it is not necessary to apply the resist 61 to the entire area of the bottom surface 30c, and it is sufficient to apply the resist 61 only to a part of the bottom surface 30c.

  The type of the resist 61 is not particularly limited, but AZP4210 manufactured by AZ Electronic Materials is used as the resist 61 in this embodiment.

  Further, when applying the resist 61, it is preferable to heat the microchannel chip 30 to a baking temperature of the resist 61, for example, about 120 ° C. by a heat source (not shown). By applying the resist 61 while heating in this way, the resist 61 is baked substantially simultaneously with the application, so that the liquid resist 61 immediately after the application can be prevented from spreading to the periphery.

Next, as shown in FIG. 14B, the electronic component 40 and the chip 30 are heated to about 180 ° C. with a heat source (not shown) while the chip 30 is placed on the main surface 40a of the electronic component 40. The chip 30 is pressurized with a pressure of about 1.2 kgf / cm ² to connect the electronic component 40 and the chip 30.

Next, as shown in FIG. 14C, the microchannel chip 30 and the electronic component 40 are placed in a processing chamber for oxygen plasma (not shown). Then, by introducing oxygen plasma into the groove 30b, the polyparaxylylene thin film 33 that is not covered with the resist 61 is removed while using the resist 61 as a mask, while the polyparaxylylene film is formed under the resist 61. The len thin film 33 is left.

  As an oxygen plasma processing apparatus that can be used in this process, there is PLASMA-SYSTEM 440 manufactured by Tepla Technics Plasma GmbH. In this embodiment, the plasma power in the apparatus is set to 200 W, and this oxygen plasma treatment is performed for 120 seconds.

  In addition, you may perform this oxygen plasma process using the oxygen plasma generator 53 which was demonstrated in FIG. 13 of 2nd Embodiment.

  As described above, the basic structure of the electronic device 70 according to the present embodiment is completed.

In the present embodiment described above, as shown in FIG. 14C, the resist 61 is used as a mask when the polyparaxylylene thin film 33 is removed, so that the area of the region to which the resist 61 is applied is adjusted. Thus, the area of the polyparaxylylene thin film 33 remaining in a partial region of the bottom surface 30c can be controlled.

  As a result, the contact angle of the cooling fluid C on the inner surface of the groove 30b can be changed depending on the location. Therefore, the flow rate of the cooling fluid C in the microchannel can be adjusted, and the cooling efficiency varies for each electronic device 70. Can be suppressed.

The area of the polyparaxylylene thin film 33 left on the bottom surface 30c can also be adjusted by the size of the droplets of the resist 61 dropped from the ink jet apparatus.

FIGS. 15A and 15B are cross-sectional views in the case where the area of the polyparaxylylene thin film 33 is adjusted by the size of the resist droplets as described above.

  As shown in FIG. 15A, in this example, the width of the resist 61 is narrower than in the case of FIG. 14B.

Therefore, as shown in FIG. 15B, the width of the polyparaxylylene thin film 33 that remains with the resist 61 as a mask can be made narrower than in FIG. 14C.

(Other embodiments)
In the first to third embodiments, a part of the polyparaxylylene thin film 33 is removed to change the contact angle of the cooling fluid C on the inner surface of the groove 30b, but the method for controlling the contact angle is not limited to this.

As shown in FIG. 11, the contact angle is dependent on the thickness of the polyparaxylylene film 33, by omitting the step of removing the polyparaxylylene film 33, contact with a film thickness of polyparaxylylene film 33 The corner may be controlled.

In this case, in the completed electronic device, as shown in FIG. 16, the polyparaxylylene thin film 33 is formed on the entire inner surface of the groove 30b.

  Further, the number of electronic components to be cooled by the microchannel chip 30 is not limited to one, and a plurality of electronic components may be cooled by the microchannel chip 30.

  17A and 17B are cross-sectional views of an electronic device in which a plurality of electronic components are to be cooled.

  Among these, in the example of FIG. 17A, a semiconductor element provided with a thin silicon substrate is used as the electronic component 40.

Then, a polyparaxylylene thin film 65 is applied to the surface of the electronic component 40, and another electronic component 60 such as a CPU is connected to the electronic component 40 through the polyparaxylylene thin film 65.

  As shown in FIG. 2B, even if the distance between the microchannel and the heat source is not zero, the cooling performance is expected to be improved if the distance is sufficiently narrow.

  Therefore, even if the electronic component 40 is interposed between the microchannel chip 30 and the electronic component 60 as shown in FIG. 17A, if the electronic component 40 is sufficiently thin, each electronic component 40, 60 can be efficiently cooled.

On the other hand, in the example of FIG. 17B, of the two main surfaces 30x and 30y of the microchannel chip 30, the main surface 30y to which the electronic component 40 is not connected is interposed via the polyparaxylylene thin film 33. Another electronic component 70 such as a CPU is connected.

  Also in this case, by forming each groove 30b sufficiently deep, the cooling fluid C in each groove 30b flows in the vicinity of the surface of the electronic component 70, which is as high as the calculation result of FIG. The electronic component 70 can be cooled with the cooling efficiency.

  The following additional notes are disclosed for each embodiment described above.

(Supplementary note 1) a substrate having a plurality of grooves formed on the surface;
An electronic component having a principal surface connected to the surface of the substrate via polyparaxylylene ,
A passage through which a cooling fluid passes is defined by the main surface and the groove,
An electronic device, wherein the polyparaxylylene is present on the inner surface of the groove.

(Additional remark 2) The said polyparaxylylene exists in the whole surface of the inner surface of the said groove | channel, The electronic device of Additional remark 1 characterized by the above-mentioned.

(Supplementary note 3) The electronic device according to supplementary note 1, wherein the polyparaxylylene is removed in a partial region of the inner surface of the groove.

  (Additional remark 4) The said partial area is an area | region in the bottom face of the said groove | channel, The electronic device of Additional remark 1 characterized by the above-mentioned.

(Supplementary Note 5) The electronic device according to any one of Supplementary Notes 1 to 4, wherein another electronic component is connected to the electronic component via polyparaxylylene .

(Additional remark 6) The said surface of the said base | substrate is one main surface of the two main surfaces of this base | substrate,
The electronic device according to any one of appendices 1 to 4, wherein another electronic component is connected to the other main surface of the two main surfaces of the base via polyparaxylylene .

(Supplementary Note 7) A step of preparing a base having a plurality of grooves formed on the surface, and forming a polyparaxylylene thin film on the surface and the inner surface of the grooves;
While heating the polyparaxylylene film, by pressing the main surface of the electronic component on the polyparaxylylene film on said surface of said substrate, said and said substrate through said polyparaxylylene film Connecting electronic components; and
A method for manufacturing an electronic device, comprising:

Before connecting the (Supplementary Note 8) The substrate and the electronic component, a laser is irradiated on the polyparaxylylene film in the bottom of the trench, removing the polyparaxylylene film portion the laser is irradiated The method of manufacturing an electronic device according to appendix 7, further comprising a step of:

(Additional remark 9) After connecting the said base | substrate and the said electronic component, oxygen plasma is supplied in the said groove | channel, and a part of said polyparaxylylene thin film formed in the inner surface of the said groove | channel is removed, It is characterized by the above-mentioned. The manufacturing method of the electronic device of Claim 7.

(Appendix 10) After connecting the base body and the electronic component, applying a resist on the polyparaxylylene thin film on the bottom surface of the groove;
After connecting the base and the electronic component, oxygen plasma is supplied into the groove to remove a portion of the polyparaxylylene thin film not covered with the resist while using the resist as a mask. The method of manufacturing an electronic device according to appendix 7, further comprising a step of leaving the polyparaxylylene thin film under the resist.

(Appendix 11) Before the step of forming the polyparaxylylene thin film, a step of forming a resist pattern on the surface of the substrate;
The method further includes the step of forming the groove in the substrate using a DRIE (Deep Reactive Ion Etching) method in which an etching gas and a film forming gas are alternately supplied into an etching atmosphere while using the resist pattern as a mask. The manufacturing method of the electronic device of Claim 7 characterized by these.

DESCRIPTION OF SYMBOLS 1, 5, 30 ... Micro channel chip, 1a ... Micro channel, 1b ... Lower surface, 5a ... Groove, 5b ... Surface, 6 ... Electronic component, 6a ... Main surface, 10 ... Building, 11 ... Circulation unit, 12 ... Heat exchange 13 ... Pump, 14 ... Server, 17 ... First circulation line, 18 ... Second circulation line, 19 ... Blade, 25 ... Floor surface, 30a ... Surface, 30b ... Groove, 30c ... Bottom surface, 30d ... Side surface , 31 ... photoresist, 32 ... resist pattern, 32a ... window, 33 ... polyparaxylylene film, 40, 60, 70 ... electronic component, 40a, 30x, 30y ... major surface, 51, 52 first and second Manifold, 53 ... oxygen plasma generator, 54 ... piping, 61 ... resist, 100 ... vapor deposition apparatus, 101 ... main body, 102 ... cell, 103 ... heating pipe, 104 ... chamber, 105 ... mounting table, 1 9 ... dimer.

Claims (7)

A base having a plurality of grooves formed on the surface;
An electronic component having a principal surface connected to the surface of the substrate via polyparaxylylene ,
A passage through which a cooling fluid passes is defined by the main surface and the groove,
An electronic device, wherein the polyparaxylylene is present on the inner surface of the groove. The electronic device according to claim 1, wherein the polyparaxylylene is present on the entire inner surface of the groove. The electronic device according to claim 1, wherein the polyparaxylylene is removed in a partial region of the inner surface of the groove. The electronic device according to claim 3 , wherein the partial region is a region on a bottom surface of the groove. The electronic device according to claim 1, wherein another electronic component is connected to the electronic component via polyparaxylylene . The surface of the substrate is one of the two principal surfaces of the substrate;
5. The electron according to claim 1, wherein another electronic component is connected to the other main surface of the two main surfaces of the base via polyparaxylylene. device. Preparing a base having a plurality of grooves formed on the surface, and forming a polyparaxylylene thin film on the surface and the inner surface of the grooves;
While heating the polyparaxylylene film, by pressing the main surface of the electronic component on the polyparaxylylene film on said surface of said substrate, said and said substrate through said polyparaxylylene film Connecting electronic components; and
A method for manufacturing an electronic device, comprising: