JP5433849B2 - Magnetic sensor - Google Patents

Description

  The present invention relates to a magnetic sensor, and more particularly to a high-density mounting compatible magnetic sensor including a magnetic material formed thickly on a semiconductor substrate for magnetic sensing for magnetic amplification.

  Conventionally, a magnetic sensor combining a Hall element and a magnetic material having a magnetic amplification function is known (Patent Document 1).

  In addition, with the recent miniaturization of mobile phones and other electronic devices, the demand for higher density of semiconductor devices such as LSIs mounted on them has become increasingly severe. There is a need for a wafer level chip size package type semiconductor device that unifies the process and the package assembly process.

JP 2007-278733 A

  In order to achieve high-density mounting of magnetic sensors equipped with magnetic materials, it is necessary to support wafer level chip size packages. However, there are currently no examples of mounting on packages other than mold resin-sealed packages. In magnetic sensors, it is necessary to form a magnetic material with a height of several tens of μm and a diameter of several hundreds of μm on the surface of a semiconductor circuit board. Therefore, the manufacturing process is incorporated into the wafer level chip size package formation process. Since the magnetic material may be oxidized by moisture or the like, it is necessary to form an insulating film on the magnetic material without defects in order to maintain reliability.

  An object of the present invention made in view of such a situation is to provide a small and thin small wafer level chip package magnetic sensor incorporating a magnetic material for magnetic amplification.

The magnetic sensor provided by the present invention to achieve the above object includes a semiconductor circuit (1) having an external connection terminal pad portion (3) and a plurality of Hall elements (4) spaced from the external connection terminal pad portion. ), A first insulating film (2) disposed on the semiconductor substrate and having a first opening at a portion of the external connection terminal pad portion, and on the first insulating film, A first ground conductive layer (5) disposed in a region covering the magnetic element of the Hall element across the Hall element; a magnetic body (6) disposed on the first ground conductive layer; A second insulating film (8) disposed on the first insulating film and having an opening communicating with the first opening; and the second insulation on the external connection terminal pad portion and the peripheral portion of the pad portion. Separated from the part on the film that covers the magnetic sensing part of the Hall element A second underlayer conductive layer (12) disposed at a position, a redistribution layer (7) disposed over the second underlayer conductive layer, the redistribution layer and the first insulating film to the magnetic body A second insulating film (8) continuously disposed on the periphery and having a second opening in the peripheral portion; the exposed first insulating film between the rewiring layer and the magnetic body; and the rewiring A third insulating film (13) continuously disposed on the layer and on the magnetic body and having a second opening in the peripheral portion; and a solder disposed on the rewiring layer so as to fill the second opening A ground layer for forming (9), and an external connection solder portion (10) disposed on the ground layer for solder formation, wherein the solder portion for external connection includes the ground layer for solder formation and the rewiring It is electrically connected to the external connection terminal pad portion through a layer and the second base energization layer.

  According to the present invention having the above-described structure, a structure that is not provided in a conventional magnetic sensor and that is provided with a magnetic material formed thickly on a magnetic sensing region on a semiconductor substrate for magnetic amplification and covered with an insulating film is provided. A wafer level package structure can be realized.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>
FIG. 1 is a structural diagram for explaining a first embodiment of a magnetic sensor according to the present invention, in which reference numeral 1 is a semiconductor circuit, 2 is a first insulating film, 3 is an external connection terminal pad, and 4 is a Hall element. Reference numeral 5 denotes a first base metal layer, 6 denotes a magnetic material, 7 denotes a rewiring conductive layer, 8 denotes a second insulating film, 9 denotes a solder formation base layer, and 10 denotes a solder ball joint.

  The magnetic sensor of this embodiment includes an external connection terminal 3, a first ground conductive layer 5, and a redistribution conductive layer 7 via a first insulating film 2 on a semiconductor circuit 1. Further, a first base energization layer 5 and a magnetic body 6 are provided immediately above the Hall element 4 away from the external connection terminal 3 of the semiconductor circuit 1.

  In addition, a second insulating film 8, a solder formation base layer 9 and a solder ball joint 10 are provided on the rewiring layer 7 on the semiconductor circuit 1, and a second insulating film 8 is provided on the magnetic body 6. Yes.

  It is desirable that the first and second insulating films 2 and 8 sandwiching the magnetic material use polyimide, polybenzoxazole, benzocyclobutene, or epoxy.

  The film thickness of the second insulating film 8 is desirably 0.1 to 30 μm, and the film thickness of the first insulating film 2 is desirably 1 to 20 μm.

  The magnetic body 6 preferably contains at least two of Ni, Fe, and Co, and preferably has a thickness of 1 to 50 μm.

  2 to 3 are process diagrams for explaining a method of manufacturing the magnetic sensor shown in FIG.

  First, in the process of FIG. 2, in FIG. 2A, the semiconductor circuit 1 is formed with external connection terminal pads 3 for electrical connection. The external connection terminal pad 3 is generally made of an Al-based material. Further, a first insulating film 2 is formed on the semiconductor circuit 1, and the first insulating film 2 generally uses an organic material such as polyimide, polybenzoxazole, benzocyclobutene, or the like. The film can be formed by a spin coating method or a printing method. In general, the film is formed by spin coating, and the film thickness is desirably 1 to 30 μm. Since the first insulating film 2 is not formed on the external connection terminal pad 3, the external electrode terminal pad 3 is exposed and developed. Is exposed. The semiconductor circuit 1 is formed with at least four Hall elements 4 for converting the detected magnetism into electric signals.

  Next, as shown in FIG. 2B, the first ground conductive layer 5 of the semiconductor circuit 1 as a whole is in the order of Ti-based material such as Ti and TiW, Cu-based material in the order of vacuum deposition, sputtering, electrolysis / electroless. It is formed by a plating method. The Ti-based material desirably has a thickness of at least 0.1 μm or more as a diffusion barrier layer of the Al-based material of the external connection terminal pad 3 and the Cu-based material of the first ground conductive layer 5.

  Next, as shown in FIG. 2C, a resist 11 is formed on the first underlayer conductive layer 5 in order to form a pattern of the magnetic material 6, and exposure and development are performed to form a resist gap 11a. As the resist material, either a positive resist or a negative resist may be used, but a positive resist is more preferable in consideration of resist stripping property in the subsequent steps. Moreover, since the film thickness of the resist 11 needs to be larger than the magnetic material 6, 3-60 micrometers is desirable.

  Next, as shown in FIG. 2D, a magnetic body 6 having a magnetic amplification function is formed in the resist opening 11a by electrolytic plating. The magnetic body 6 is preferably a binary magnetic material such as Fe—Ni or Fe—Co, or a ternary alloy material such as Fe—Ni or Fe—Ni—Co. The film thickness of the magnetic material 6 is preferably thick in order to realize the magnetic amplification function, and is preferably in the range of 1 to 50 μm.

  Next, as shown in FIG. 2E, the resist pattern 11 is removed. As a result, the magnetic body 6 remains on the first ground conductive layer 5.

  Next, as shown in FIG. 2 (f), a resist 11 is formed on the first ground conductive layer 5 in order to form a pattern of the rewiring layer 7, and exposure and development are performed to form a resist gap 11a. To do. As the resist material, either a positive resist or a negative resist may be used, but a positive resist is more preferable in consideration of resist stripping property in the subsequent steps. Moreover, since the film thickness of the resist 11 needs to be larger than the rewiring layer 7, 3-20 micrometers is desirable.

  Next, the process proceeds to the step of FIG. 3, and as shown in FIG. 3A, the rewiring layer 7 is formed in the resist gap 11a by a vacuum deposition method, a sputtering method, an electroless method, or an electrolytic plating method. As the rewiring conductive layer 7, an Al-based material, a Cu-based material, or an Au-based material, which is a low electrical resistance material, is desirable. Further, the thickness of the rewiring layer 7 is preferably thick in order to reduce the electric resistance, and preferably 0.1 to 10 μm.

  Next, as shown in FIG. 3B, the resist pattern 11 is removed. As a result, the rewiring layer 7 remains on the first ground conductive layer 5.

  Next, as shown in FIG. 3C, the unnecessary first ground conductive layer 5 is removed by a dry etching method or a wet etching method using the magnetic body 6 and the rewiring layer 7 as a mask. At that time, it is important that the magnetic body 6 and the rewiring layer 7 are not etched simultaneously.

  Next, as shown in FIG. 3D, a second insulating film 8 is formed on the magnetic body 6 and the rewiring layer 7. The second insulating film 8 is generally made of an organic material such as polyimide, polybenzoxazole, benzocyclobutene, or the like, and can be formed by a spin coating method, a printing method, or the like. In general, the film is formed by spin coating, and the film thickness is preferably 0.1 to 30 μm. The second insulating film 8 is formed on the portion where the solder formation base layer 9 necessary for electrical bonding is formed. Therefore, the rewiring layer 7 is exposed by exposure and development.

  Next, as shown in FIG. 3 (e), a portion for exposing the rewiring layer 7 on the second insulating film 8 is used for solder formation by vacuum deposition, sputtering, electrolysis or electroless plating. The formation 9 is formed. The solder forming layer 9 is laminated in the order of Ti-based material and Cu-based material. Further, since the Cu-based material forms an alloy with the solder ball joint 10 and joins, if the thickness of the Cu-based material is thin, a Kirkendall void may be generated and the connection reliability may be reduced. Is preferably 0.2 to 10 μm.

  Finally, the solder ball joint portion 10 is formed on the solder formation base layer 9 to realize the magnetic sensor of the present invention having the structure shown in FIG. Here, the solder ball joint portion 10 is formed by printing the solder ball by a screen printing method and performing a reflow process, or mounting the solder ball directly on the solder formation base layer 9 and performing the reflow.

Second Embodiment
The structure of the magnetic sensor of the first embodiment is realized by using the same underlayer for the magnetic body and the rewiring layer. However, in order to further reduce the size in the future, it is necessary to further reduce the stress of the element. Therefore, in the present embodiment, for the purpose of stress relaxation, a structure in which the magnetic body 6 and the rewiring layer 7 are formed as separate underlayers and the third insulating film 13 is added as a stress relaxation layer therebetween is realized. This structure has an effect that oxidation of the magnetic material 6 can be further reduced by placing two insulating layers on the magnetic body 6.

  FIG. 4 is a structural diagram for explaining a second embodiment of the magnetic sensor according to the present invention, in which reference numeral 1 is a semiconductor circuit, 2 is a first insulating film, 3 is an external connection terminal pad, and 4 is a Hall element. 5 is a first ground conductive layer, 6 is a magnetic material, 7 is a redistribution layer, 8 is a second insulating film, 9 is a solder forming ground layer, 10 is a solder ball joint, and 12 is a second ground conductive layer. , 13 indicates a third insulating film.

  In the magnetic sensor of the present embodiment, the semiconductor circuit includes a Hall element, and includes a first ground conductive layer and a magnetic material via an insulating film. A second insulating film is provided on the magnetic body and the first insulating film. An external connection terminal pad on the semiconductor circuit is opened with a first insulating film and a second insulating film, and a second ground conductive layer and a rewiring layer are provided on the external connection terminal pad. Further, a third insulating film is provided on the second insulating film and the rewiring layer, and an opening is provided with a solder formation base layer and a solder ball joint.

  It is desirable that the first and second insulating films 2 and 8 sandwiching the magnetic material use polyimide, polybenzoxazole, benzocyclobutene, or epoxy.

  The film thickness of the second insulating film 8 is desirably 0.1 to 30 μm, and the film thickness of the first insulating film 2 is desirably 1 to 30 μm.

  The magnetic body 6 preferably contains at least two kinds of Ni, Fe, and Co, and the film thickness is preferably 1 to 50 μm.

  5 to 7 are process diagrams for explaining a method of manufacturing the magnetic sensor shown in FIG.

  First, in the step of FIG. 5, in FIG. 5A, the semiconductor circuit 1 is formed with an external connection terminal pad 3 for having an electrical junction. The external connection terminal pad 3 is generally made of an Al-based material. Further, a first insulating film 2 is formed on the semiconductor circuit 1, and the first insulating film 2 generally uses an organic material such as polyimide, polybenzoxazole, benzocyclobutene, or the like. The film can be formed by a spin coating method or a printing method. In general, the film is formed by spin coating, and the film thickness is desirably 1 to 30 μm. Since the insulating film 2 is not formed on the external connection terminal pad 3, exposure and development are performed to expose the external electrode terminal pad 3. I am letting. The semiconductor circuit 1 is formed with at least one Hall element 4 for converting the detected magnetism into an electric signal.

  Next, as shown in FIG. 5B, the first ground conductive layer 5 of the semiconductor circuit 1 as a whole is in the order of Ti-based material such as Ti and TiW and Cu-based material in the order of vacuum deposition, sputtering, electrolysis / electroless. It is formed by a plating method. The Ti-based material desirably has a thickness of at least 0.1 μm or more as a diffusion barrier layer of the Al-based material of the external connection terminal pad 3 and the Cu-based material of the first ground conductive layer 5.

  Next, as shown in FIG. 5C, a resist 11 is formed on the first ground conductive layer 5 in order to form a pattern of the magnetic material 6, and exposure and development are performed to form a resist gap 11a. As the resist material, either a positive resist or a negative resist may be used, but a positive resist is more preferable in consideration of resist stripping property in the subsequent steps. Moreover, since the film thickness of the resist 11 needs to be larger than the magnetic body 6, 3-60 micrometers is desirable.

  Next, as shown in FIG. 5D, a magnetic body 6 having a magnetic amplification function is formed in the resist opening 11a by electrolytic plating. The magnetic body 6 is preferably a soft magnetic material such as a binary material such as Fe—Ni or Fe—Co, or a ternary alloy material such as Fe—Ni or Fe—Ni—Co. Further, the thickness of the magnetic body 6 is preferably thick in order to realize the magnetic amplification function, and is preferably in the range of 1 to 50 μm.

  Next, as shown in FIG. 5E, the resist pattern 11 is removed. As a result, the magnetic body 6 remains on the first ground conductive layer 5.

  Next, the process proceeds to the step of FIG. 6, as shown in FIG. 6A, the unnecessary first ground conductive layer 5 is removed by a dry etching method or a wet etching method using the magnetic material 6 as a mask. At that time, it is important to prevent the magnetic material 6 from being etched at the same time.

  Next, as shown in FIG. 6B, a second insulating film 8 is formed on the magnetic body 6. The second insulating film 8 is generally made of an organic material such as polyimide, polybenzoxazole, benzocyclobutene, or the like, and can be formed by a spin coating method, a printing method, or the like. In general, the film is formed by spin coating, and the film thickness is preferably 0.1 to 30 μm. Exposure and development are performed for electrical bonding, the second insulating film 8 is opened, and the external connection terminal pad 3 is exposed. I am letting.

  Next, as shown in FIG. 6C, the second insulating conductive layer 12 as a whole is formed on the second insulation 8 in the order of Ti-based material such as Ti and TiW, and Cu-based material in this order, the vacuum deposition method, the sputtering method, and the electrolysis.・ It is formed by electroless plating. The Ti-based material desirably has a thickness of at least 0.1 μm or more as a diffusion barrier layer of the Al-based material of the external connection terminal pad 3 and the Cu-based material of the first ground conductive layer 5.

  Next, as shown in FIG. 6D, a resist 11 is formed to form a pattern of the rewiring conductive layer 7 on the second ground conductive layer 12, and exposure and development are performed to form a resist gap 11a. To do. As the resist material, either a positive resist or a negative resist may be used, but a positive resist is more preferable in consideration of resist stripping property in the subsequent steps. Moreover, since the film thickness of the resist 11 needs to be larger than the rewiring layer 7, 3-20 micrometers is desirable.

  Next, as shown in FIG. 6 (e), the rewiring layer 7 is formed in the resist gap 11a by vacuum deposition, sputtering, electroless or electrolytic plating. As the rewiring layer 7, an Al-based material, a Cu-based material, or an Au-based material that is a low electrical resistance material is desirable. Further, the thickness of the rewiring layer 7 is preferably thick in order to reduce the electric resistance, and preferably 0.1 to 10 μm.

  Next, the process proceeds to the step of FIG. 7, and the resist pattern 11 is removed as shown in FIG. As a result, the rewiring layer 7 remains on the second ground conductive layer.

  Next, as shown in FIG. 7B, the unnecessary second ground conductive layer 12 is removed by a dry etching method or a wet etching method using the magnetic body 6 and the rewiring layer as a mask. At that time, it is important that the magnetic body 6 and the rewiring layer are not etched simultaneously.

  Next, as shown in FIG. 7C, the third insulating film 13 is formed on the magnetic body 6 and the second insulating film 8. The third insulating film 13 is generally made of an organic material such as polyimide, polybenzoxazole, benzocyclobutene, or the like, and can be formed by a spin coating method, a printing method, or the like. In general, the film is formed by spin coating, and the film thickness is preferably 0.1 to 30 μm, and the third insulating film 13 is formed on the portion where the solder formation base layer 9 necessary for electrical bonding is formed. Therefore, exposure and development are performed to expose the rewiring layer 7.

  Next, as shown in FIG. 7 (d), a portion for exposing the rewiring layer 7 on the third insulating film 13 is exposed to a portion for forming solder by vacuum deposition, sputtering, electrolysis or electroless plating. The formation 9 is formed. The solder formation base layer 9 is laminated in the order of Ti-based material and Cu-based material. Further, since the Cu-based material forms an alloy with the solder ball joint 10 and joins, if the thickness of the Cu-based material is thin, a Kirkendall void may be generated and the connection reliability may be reduced. Is preferably 0.2 to 10 μm.

  Finally, the solder ball joint portion 10 is formed on the solder formation base layer 9 to realize the magnetic sensor of the present invention having the structure shown in FIG. Here, the solder ball joint portion 10 is formed by printing a solder paste by a screen printing method and performing a reflow process, or mounting the solder ball directly on the solder formation base layer 9 and performing a reflow.

  The result of actually manufacturing the magnetic sensor of the present invention having the structure shown in FIG. 1 and the result of actually manufacturing the magnetic sensor of the present invention having the structure shown in FIG. 4 will be described.

<Example 1>
As Example 1 of the present invention, an external connection terminal pad 3 was opened in the entire 8-inch semiconductor circuit 1 to form a polyimide film with a thickness of 5 μm. Thereafter, 1500 Ｔｉ of Ti and 6000 Ｃｕ of Cu were formed as the first ground conductive layer 5 by a sputtering method (1000 Å = 0.1 μm). Thereafter, a resist pattern was formed to a thickness of 20 μm using a positive resist to form the magnetic body 6. Further, as a magnetic material, an Ni—Fe alloy with a thickness of 15 μm was formed in the resist gap 11a by electrolytic plating. Then, the resist which became unnecessary was removed using the organic solvent.

  Next, in order to form the rewiring layer 7, resist patterning was performed with a positive resist to a thickness of 20 μm, and Cu was formed to 5 μm by electrolytic plating. Then, the resist that was no longer needed was removed with an organic solvent, and Cu and Ti, which were the first ground conductive layer, were removed by wet etching.

  Next, the magnetic body 6 and the rewiring layer 7 were formed to a thickness of 7 μm with polyimide as a second insulating film. It is important that the magnetic material is not exposed, but the thickness of the polyimide was confirmed by cross-sectional polishing and SEM observation. Was confirmed.

  Next, 1000 μm of Ti and 2000 μm of Cu are formed by sputtering as the solder formation base layer 9, and 4 μm of Cu is formed by electrolytic plating, and a solder ball having a diameter of 0.25 mm is mounted with a ball mounter. By passing the nitrogen reflow apparatus, the product of the present invention having the structure shown in FIG. 1 could be manufactured.

  Finally, the product of the present invention was diced into individual pieces, and a wafer level chip size package having a length of 2.5 mm, a width of 2.5 mm, and a thickness of 0.75 mm could be formed. The magnetic sensor corresponding to the level chip size package required for high-density mounting could be manufactured.

  When the product of the present invention thus produced was placed in a humidity of 85 ° C. and 85% RH, no discoloration of the magnetic material 6 was confirmed up to 1000 Hr, but discoloration was observed at 1500 Hr.

<Example 2>
As Example 2 of the present invention, an external connection terminal pad 3 was opened in the entire 8-inch semiconductor circuit 1 to form a polyimide film with a thickness of 5 μm. Thereafter, 1500 Ｔｉ of Ti and 6000 Ｃｕ of Cu were formed as the first ground conductive layer 5 by a sputtering method. Thereafter, a positive resist was used to form the magnetic material 6, and a resist pattern was formed with a thickness of 20 μm. Further, as a magnetic material, an Ni—Fe alloy with a thickness of 15 μm was formed in the resist gap 11a by electrolytic plating. Thereafter, the unnecessary resist was removed using an organic solvent, and Cu and Ti were removed by a wet etching method in order to remove the first ground conductive layer 5 from a place other than the magnetic material 6.

  Next, polyimide was formed to a thickness of 7 μm as the second insulating film, and again the second ground conductive layer 9 was formed by sputtering with Ti of 1500 mm and Cu of 6000 mm. Next, in order to form the rewiring conductive layer 7, resist patterning was performed with a positive resist to a thickness of 20 μm, and Cu was formed to 5 μm by electrolytic plating. Then, the unnecessary resist was removed with an organic solvent, and Cu and Ti as the second ground conductive layer 12 were removed by wet etching.

  Next, on the magnetic body 6 and the rewiring layer 7, a third insulating film 13 was formed with a thickness of 7 μm using polyimide. Although it is important that the magnetic material is not exposed, the thickness of the polyimide was confirmed by cross-sectional polishing and SEM observation. As a result, it was possible to form a 4.5 μm film without exposing the magnetic material even in the thinnest place. Was confirmed.

  Next, after forming Ti by 1000 mm and Cu by 2000 mm as the solder base conductive layer 9, Cu is formed by 4 μm by electrolytic plating, and a solder ball having a diameter of 0.2 mm is mounted by a ball mounter, and nitrogen is added. By passing the reflow apparatus, the product of the present invention having the structure shown in FIG. 4 could be manufactured.

  Finally, the product of the present invention was diced into individual pieces, and a wafer level chip size package having a length of 2.5 mm, a width of 2.5 mm, and a thickness of 0.75 mm could be formed. The magnetic sensor corresponding to the level chip size package required for high-density mounting could be manufactured.

  When the product of the present invention thus produced was placed in a humidity of 85 ° C. and 85% RH, discoloration of the magnetic material 6 could not be confirmed even after 1500 hours had elapsed, and an improvement in corrosion resistance was confirmed.

  The present invention can be applied not only to the magnetic sensor of the wafer level package as described in the first and second embodiments, but also to the realization of an element having a three-dimensional mounting structure including a through electrode.

  As described above, according to the present invention, for the first time, a magnetic sensor having a wafer level package structure having a structure in which a thick magnetic material is formed on a semiconductor substrate for magnetic amplification and covered with an insulating film. Could be realized. The chip sizes of the samples of Example 1 and Example 2 are 2.5 mm long and 2.5 mm wide, and the surface area can be reduced by 60% from the conventional package size of 4 mm long and 4 mm wide. It was. Further, the magnetic material was protected by an insulating film having a thickness of 0.5 μm or more, and it was confirmed that no discoloration occurred up to 1000 Hr even in a humidity standing test.

1 is a schematic structural diagram for explaining a first embodiment of a magnetic sensor according to the present invention. FIGS. 2A and 2B are process diagrams (part 1) for explaining a manufacturing method of the magnetic sensor shown in FIG. 1, in which FIG. 1A is a semiconductor circuit, FIG. 1B is a view after forming a first ground conductive layer, and FIG. (1) After forming the resist pattern on the ground conductive layer, (d) is a cross section after the formation of the magnetic material, (e) is after the resist is removed, and (f) is a schematic cross section after the formation of the resist pattern for the rewiring layer. Expressed in FIGS. 2A and 2B are process diagrams (part 2) for explaining the manufacturing method of the magnetic sensor shown in FIG. 1, wherein FIG. 1A shows a resist pattern for forming a rewiring metal layer, and FIG. After the removal, (c) is a cross section after removing the first base metal layer that is no longer needed, (d) after forming the second insulating film, and (e) schematically showing a cross section after forming the solder forming base layer. Represent. It is a schematic structure diagram for explaining a second embodiment of a magnetic sensor according to the present invention. FIGS. 5A and 5B are process diagrams (part 1) for explaining a method of manufacturing the magnetic sensor shown in FIGS. 4A and 4B, where FIG. 4A is a semiconductor circuit, FIG. 4B is a view after forming a first ground conductive layer, and FIG. (1) After forming a resist pattern on one underlayer conductive layer, (d) schematically shows a cross section after the magnetic material is formed, and (e) schematically shows a cross section after the resist is removed. FIGS. 4A and 4B are process diagrams (part 2) for explaining the manufacturing method of the magnetic sensor shown in FIG. 4, in which FIG. 4A is a view after removing the first ground conductive layer, and FIG. c) After the formation of the second ground conductive layer on the second insulating film, (d) after the resist pattern is formed on the second insulating film, and (e) schematically showing the cross section after the formation of the rewiring layer. Represent. FIGS. 4A and 4B are process diagrams (No. 3) for explaining the method of manufacturing the magnetic sensor shown in FIG. 4, wherein FIG. 4A is a view after removing the resist pattern, and FIG. 4B is a view after removing the second ground conductive layer; (D) schematically shows a cross-section after the formation of the third insulating film and (d) after the formation of the solder forming base layer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor circuit 2 1st insulating film 3 External connection terminal pad 4 Hall element 5 1st base conduction layer 6 Magnetic body 7 Redistribution layer 8 2nd insulating film 9 Base layer 10 for solder formation Solder ball junction part 11 Resist pattern 11a Resist Air gap part 12 Second ground conductive layer 13 Third insulating film

Claims (7)

A semiconductor circuit having a semiconductor circuit having an external connection terminal pad portion and a plurality of Hall elements spaced from the external connection terminal pad portion;
A first insulating film disposed on the semiconductor substrate and having a first opening at a portion of the external connection terminal pad portion;
A first base energization layer disposed on the first insulating film and over the plurality of hall elements and covering a magnetic sensing portion of the hall element;
A magnetic body disposed on the first ground conductive layer;
A second insulating film disposed on the magnetic body and on the first insulating film and having an opening communicating with the first opening;
A second base energization layer disposed on the external connection terminal pad part and on the second insulating film in the peripheral part of the pad part and spaced from the covering part;
A rewiring layer disposed on the second ground conductive layer;
A third insulating film continuously disposed on the redistribution layer and the first insulating film to the magnetic body and having a second opening in the peripheral portion;
An underlayer for solder formation disposed on the rewiring layer so as to fill the second opening;
An external connection solder portion disposed on the solder formation base layer,
The magnetic sensor, wherein the external connection solder portion is electrically connected to the external connection terminal pad portion via the solder formation base layer, the rewiring layer, and the second base energization layer.   2. The magnetic sensor according to claim 1, wherein the first to third insulating films are made of polyimide, polybenzoxazole, benzocyclobutene, and epoxy, or a combination thereof.   The magnetic sensor according to claim 1, wherein the first to third insulating films each have a thickness of 0.1 to 30 μm.   The magnetic sensor according to any one of claims 1 to 3, wherein the material constituting the magnetic body is made of any one of Ni, Fe, and Co, or an alloy containing at least two.   5. The magnetic sensor according to claim 1, wherein the magnetic material has a thickness of 1 to 50 μm.   The first underlayer conductive layer and / or the second underlayer conductive layer is made of a laminated metal film of Ti or TiW and Cu, or a first laminated metal film of Ti, Al, and Ti, and the underlayer for solder formation includes The magnetic sensor according to claim 1, comprising a second laminated metal film of Ti or TiW and Cu. The thickness of the first laminated metal film is 0.1 to 2.0 μm and 0.1 to 2.0 μm, respectively, in the case of Ti, TiW, or Cu, and 0 in the case of Ti, Al, and Ti, respectively. 0.1 to 2.0 μm, 0.1 to 3 μm, and 0.1 to 2.0 μm, and the thickness of the second laminated metal film is 0.1 to 2.0 μm, respectively. It is 0.1-10 micrometers, The magnetic sensor of Claim 6 characterized by the above-mentioned.

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