JP5413568B2 - Chemical mechanical polishing aqueous dispersion, method for producing the same, and chemical mechanical polishing method - Google Patents

Description

  The present invention relates to an aqueous dispersion for chemical mechanical polishing, a method for producing the same, and a chemical mechanical polishing method.

  In recent years, the use of a low dielectric constant interlayer insulating film (hereinafter also referred to as “low dielectric constant insulating film”) has been studied in order to prevent an increase in signal delay due to the multilayer wiring of a semiconductor device. As such a low dielectric constant insulating film, for example, materials described in Patent Document 1 and Patent Document 2 have been studied. When the low dielectric constant insulating film as described above is used as the interlayer insulating film, high electrical conductivity is required for the wiring material, and thus copper or copper alloy is generally used. When manufacturing such a semiconductor device by the damascene method, the wiring material on the barrier metal film is usually removed by chemical mechanical polishing (first polishing process), and then the barrier metal film is removed by polishing, as necessary. Therefore, it is necessary to perform a step (second polishing step) of further polishing and planarizing the wiring material and the interlayer insulating film.

  In the first polishing step, it is required to selectively polish only the wiring material at a high speed. However, at the end of the first polishing process (when another material film such as a barrier metal film is exposed), it is very difficult to suppress dishing and erosion of the wiring portion while maintaining a high polishing rate for the wiring material. It is difficult to. For example, if only the polishing rate is increased, it may be achieved by increasing the applied pressure during polishing and increasing the frictional force applied to the wafer, but dishing and erosion of the wiring part is also accompanied by an increase in the polishing rate. The approach from the polishing method was limited because it deteriorated. Furthermore, in order to obtain a good polished surface in the second polishing step, it is necessary to suppress the copper residue (copper residue) on the fine wiring pattern at the end of the first polishing step.

  As described above, in addition to high-speed polishing performance and high planarization characteristics, removing the copper residue as it is at the end of the first polishing step or through a simple cleaning step can be achieved with the present polishing method. In order to compensate for this, it is required to develop a new aqueous dispersion for chemical mechanical polishing that can satisfy the above-mentioned characteristics.

  By the way, in general, the composition of the chemical mechanical polishing aqueous dispersion is composed of abrasive grains and additive components. In recent years, the development of aqueous dispersions for chemical mechanical polishing has centered on studies focusing on the combination of additive components, but on the other hand, studies have been made to improve polishing characteristics by controlling the properties of abrasive grains. (For example, see Patent Documents 3 and 4).

  However, for example, when the abrasive grains described in Patent Document 3 or Patent Document 4 are used, a metal component such as sodium is present in the abrasive grains, and sodium or the like remaining on the object to be polished after polishing. There was a problem that it was difficult to remove the metal component, and it was difficult to use it for polishing an actual device. Furthermore, the abrasive grains described in Patent Document 3 or Patent Document 4 have a problem of poor storage stability because the particle dispersion lacks stability.

JP 2001-308089 A JP 2001-298023 A JP 2003-197573 A JP 2003-109921 A

  Provided are a chemical mechanical polishing aqueous dispersion in which metal contamination of a device wafer is reduced and the storage stability of silica particles is excellent, and a chemical mechanical polishing method using the same. Furthermore, the present invention provides an aqueous dispersion for chemical mechanical polishing capable of achieving both a high polishing rate and a high planarization characteristic for a copper film without causing defects in the copper film and the interlayer insulating film.

  The chemical mechanical polishing aqueous dispersion according to the present invention is a chemical mechanical polishing aqueous dispersion for polishing a copper film containing (A) silica particles and (B) an amino acid. ) Silica particles are characterized by the following chemical properties.

  Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the (B) amino acid may be at least one selected from glycine, alanine, and histidine.

  The chemical mechanical polishing aqueous dispersion according to the invention may further contain (C) an organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the (C) organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group may be quinaldic acid or quinolinic acid.

  In the chemical mechanical polishing aqueous dispersion according to the invention, the ratio (Rmax / Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the (A) silica particles is 1.0 to 1.5. Can do.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the average particle diameter calculated from the specific surface area of the (A) silica particles measured using the BET method may be 10 nm to 100 nm.

  In the chemical mechanical polishing aqueous dispersion according to the present invention, the pH may be 6-12.

  A chemical mechanical polishing method according to the present invention is a method for chemically mechanically polishing an object having a copper film formed on a barrier metal film, wherein the copper film is formed using the chemical mechanical polishing aqueous dispersion. Chemical mechanical polishing is performed, and the chemical mechanical polishing is stopped when the barrier metal film is exposed.

  The method for producing a chemical mechanical polishing aqueous dispersion according to the present invention is a method for producing a chemical mechanical polishing aqueous dispersion by adding (A) silica particles and (B) an amino acid, The (A) silica particles have the following chemical properties.

  Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm.

  According to the chemical mechanical polishing aqueous dispersion, metal contamination of the device wafer is reduced, and the storage stability of the silica particles is improved. Furthermore, according to the chemical mechanical polishing aqueous dispersion, it is possible to achieve both a high polishing rate and a high planarization characteristic for the copper film without causing defects in the copper film and the interlayer insulating film.

It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is the conceptual diagram which showed the major axis and minor axis of the silica particle typically. It is sectional drawing which showed the to-be-processed object used for the chemical mechanical polishing method of this invention. It is sectional drawing for demonstrating the grinding | polishing process of the chemical mechanical grinding | polishing method of this invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail.

1. Chemical mechanical polishing aqueous dispersion The chemical mechanical polishing aqueous dispersion according to the present embodiment is a chemical mechanical polishing aqueous dispersion for polishing a copper film containing (A) silica particles and (B) amino acids. The (A) silica particles have the following chemical properties. The chemical property is “the content of sodium, potassium and ammonium ions measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ions by ion chromatography, but the content of sodium: 5 to 500 ppm, content of at least one selected from potassium and ammonium ions: satisfying the relationship of 100 to 20000 ppm ”. First, each component constituting the chemical mechanical polishing aqueous dispersion according to this embodiment will be described.

1.1 (A) Silica Particles The (A) silica particles used in the present embodiment contain 5 to 500 ppm, preferably 10 to 400 ppm, particularly preferably 15 to 300 ppm of sodium. Further, it contains 100 to 20000 ppm of at least one selected from potassium and ammonium ions. When said (A) silica particle contains potassium, content of potassium becomes like this. Preferably it is 100-20000 ppm, More preferably, it is 500-15000 ppm, Most preferably, it is 1000-10000 ppm. When said (A) silica particle contains ammonium ion, content of ammonium ion becomes like this. Preferably it is 100-20000 ppm, More preferably, it is 200-10000 ppm, Most preferably, it is 500-8000 ppm. Further, even when potassium or ammonium ions contained in the silica particles (A) are not within the above range, the total content of potassium and ammonium ions is 100 to 20000 ppm, preferably 500 to 15000 ppm, more preferably 1000 to If it is within the range of 10,000 ppm, the effect of the present invention can be obtained.

  If the sodium content exceeds 500 ppm, wafer contamination after polishing occurs, which is not preferable. On the other hand, in order to make sodium less than 5 ppm, it is necessary to perform the ion exchange treatment a plurality of times, which involves technical difficulties.

  If at least one selected from potassium and ammonium ions exceeds 20000 ppm, the pH of the silica particle dispersion may become too high and silica may be dissolved. On the other hand, if at least one selected from potassium and ammonium ions is less than 100 ppm, the dispersion stability of the silica particles is lowered, and the silica particles are aggregated, thereby causing defects on the wafer. .

  In addition, the content of sodium and potassium contained in the silica particles described above is a value determined using ICP emission analysis (ICP-AES) or ICP mass spectrometry (ICP-MS). As the ICP emission analyzer, for example, “ICPE-9000 (manufactured by Shimadzu Corporation)” or the like can be used. As the ICP mass spectrometer, for example, “ICPM-8500 (manufactured by Shimadzu Corporation)”, “ELAN DRC PLUS (manufactured by Perkin Elmer)”, or the like can be used. Further, the content of ammonium ions contained in the silica particles described above is a value quantified using an ion chromatography method. As the ion chromatography method, for example, a non-suppressor ion chromatograph “HIS-NS (manufactured by Shimadzu Corporation)”, “ICS-1000 (manufactured by DIONEX)”, or the like can be used. The sodium and potassium contained in the silica particles may be sodium ion and potassium ion, respectively. By measuring the content of sodium ions, potassium ions, and ammonium ions, sodium, potassium, and ammonium ions contained in the silica particles can be quantified. In addition, content of sodium, potassium, and ammonium ion described in this specification is the weight of sodium, potassium, and ammonium with respect to the weight of silica particles.

  By containing sodium and at least one selected from potassium and ammonium ions within the above range, the silica particles can be stably dispersed in the chemical mechanical polishing aqueous dispersion. Aggregation of silica particles that cause defects does not occur. Moreover, if it is in the said range, the metal contamination of the wafer after grinding | polishing can be prevented.

  The average particle size calculated from the specific surface area of the (A) silica particles measured using the BET method is preferably 10 to 100 nm, more preferably 10 to 90 nm, and particularly preferably 10 to 80 nm. . (A) When the average particle diameter of the silica particles is in the range of 10 to 100 nm, it is excellent in storage stability as an aqueous dispersion for chemical mechanical polishing, and a smooth polished surface having no defects can be obtained. (A) If the average particle diameter of the silica particles is less than 10 nm, the polishing rate for the copper film becomes too small, which is not practical. On the other hand, when the average particle diameter of (A) silica particles exceeds 100 nm, it is not preferable because the storage stability of the silica particles is poor.

  (A) The average particle diameter of the silica particles is calculated from the specific surface area measured using the BET method with a flow-type specific surface area automatic measuring device “micrometrics FlowSorb II 2300 (manufactured by Shimadzu Corporation)”, for example.

  Below, the method to calculate an average particle diameter from the specific surface area of a silica particle is demonstrated.

Assuming that the shape of the silica particle is a true sphere, the particle diameter is d (nm) and the specific gravity is ρ (g / cm ³ ), the surface area A of n particles is A = nπd ² . N particles mass N becomes N = ρnπd ^3/6. The specific surface area S is represented by the surface area of all the constituent particles per unit mass of the powder. Then, the specific surface area S of n particles is S = A / N = 6 / ρd. Substituting the specific gravity ρ = 2.2 of the silica particles into this formula and converting the unit, the following formula (1) can be derived.

Average particle diameter (nm) = 2727 / S (m ² / g) (1)

  In addition, all the average particle diameters of the silica particles in this specification are calculated based on the formula (1).

  (A) The ratio Rmax / Rmin of the major axis (Rmax) and minor axis (Rmin) of the silica particles is preferably 1.0 to 1.5, more preferably 1.0 to 1.4, particularly preferably 1.0. ~ 1.3. When Rmax / Rmin is within the above range, a high polishing rate and a high planarization characteristic can be exhibited without causing defects in the metal film or the insulating film. If Rmax / Rmin is greater than 1.5, defects after polishing occur, which is not preferable.

  Here, the major axis (Rmax) of the silica particles means the longest distance among the distances connecting the end portions of the images of one independent silica particle image taken by a transmission electron microscope. . The short diameter (Rmin) of the silica particles means the shortest distance among the distances connecting the end portions of the image of one independent silica particle image taken with a transmission electron microscope.

  For example, when the image of one independent silica particle 10a photographed by a transmission electron microscope as shown in FIG. 1 is elliptical, the major axis a of the elliptical shape is determined as the major axis (Rmax) of the silica particle, The elliptical minor axis b is determined as the minor axis (Rmin) of the silica particles. As shown in FIG. 2, when an image of one independent silica particle 10b photographed by a transmission electron microscope is an aggregate of two particles, the longest distance c connecting the end portions of the image is expressed as follows. The longest diameter (Rmax) of the silica particles is determined, and the shortest distance d connecting the end portions of the image is determined as the short diameter (Rmin) of the silica particles. As shown in FIG. 3, when the image of one independent silica particle 10c photographed by a transmission electron microscope is an aggregate of three or more particles, the longest distance e connecting the end portions of the image is shown. Is the long diameter (Rmax) of the silica particles, and the shortest distance f connecting the end portions of the image is determined to be the short diameter (Rmin) of the silica particles.

  For example, by measuring the major axis (Rmax) and minor axis (Rmin) of 50 silica particles, and calculating the average value of major axis (Rmax) and minor axis (Rmin), the major axis and The ratio to the minor axis (Rmax / Rmin) can be calculated and obtained.

  The content of the silica particles (A) is preferably 1 to 20% by mass, more preferably 1 to 15% by mass with respect to the total mass of the chemical mechanical polishing aqueous dispersion at the time of use. Preferably it is 1-10 mass%. When the content of the (A) silica particles is less than the above range, a sufficient polishing rate cannot be obtained, which is not practical. On the other hand, when the content of the (A) silica particles exceeds the above range, the cost increases and a stable chemical mechanical polishing aqueous dispersion may not be obtained.

  The method for producing (A) silica particles used in the present embodiment is not particularly limited as long as silica particles in which the content of sodium, potassium and ammonium ions is within the above range are obtained, and a conventionally known method is applied. be able to. For example, it can be produced according to the method for producing a silica particle dispersion described in JP-A No. 2003-109921 and JP-A No. 2006-80406.

  Moreover, as a conventionally well-known method, there exists a method of producing a silica particle by removing an alkali from alkali silicate aqueous solution, for example. Examples of the alkali silicate solution include a sodium silicate aqueous solution, an ammonium silicate aqueous solution, a lithium silicate aqueous solution, and a potassium silicate aqueous solution that are generally known as water glass. Examples of ammonium silicate include silicates made of ammonium hydroxide and tetramethylammonium hydroxide.

Below, one of the specific preparation methods of the (A) silica particle used for this embodiment is demonstrated. A dilute silicic acid solution containing 20 to 38% by mass of silica and diluting an aqueous sodium silicate solution having a SiO ₂ / Na ₂ O molar ratio of 2.0 to 3.8 with water to have a silica concentration of 2 to 5% by mass A sodium aqueous solution is used. Subsequently, a dilute sodium silicate aqueous solution is passed through the hydrogen-type cation exchange resin layer to generate an active silicate aqueous solution from which most of the sodium ions have been removed. The aqueous silicic acid solution is aged with heat while adjusting the pH to 7-9 with alkali, and grown to the desired particle size to produce colloidal silica particles. During this thermal aging, an active silicic acid aqueous solution and small particles of colloidal silica are added little by little to prepare silica particles having a target particle size in the range of, for example, an average particle size of 10 to 100 nm. The silica particle dispersion thus obtained is concentrated to increase the silica concentration to 20 to 30% by mass, and then passed again through the hydrogen-type cation exchange resin layer to remove most of the sodium ions and pH with an alkali. By adjusting the pH, silica particles containing 5 to 500 ppm of sodium and 100 to 20000 ppm of at least one selected from potassium and ammonium ions can be produced.

  The content of sodium, potassium and ammonium ions contained in the silica particles is determined by recovering the silica component from the chemical mechanical aqueous dispersion containing silica particles by a known method such as centrifugation or ultrafiltration. It can be calculated by quantifying sodium, potassium and ammonium ions contained in the components. Therefore, by analyzing the silica component recovered from the chemical mechanical polishing aqueous dispersion by the above method by a known method, it can be confirmed that the constituent requirements of the present invention are satisfied.

1.2 (B) Amino Acid The chemical mechanical polishing aqueous dispersion according to this embodiment contains (B) an amino acid. The (B) amino acid is preferably at least one amino acid selected from glycine, alanine and histidine. These amino acids have a property of easily forming a coordinate bond with a copper ion, and form a coordinate bond with the surface of the copper film that is the surface to be polished. Thus, the surface roughness of the copper film can be suppressed and high flatness can be maintained, the affinity with copper and copper ions can be increased, and the polishing rate for the copper film can be promoted. Moreover, these amino acids can be easily coordinated with copper ions eluted into the slurry by polishing the copper film, and can prevent the precipitation of copper. As a result, it is possible to suppress the occurrence of polishing defects such as scratches on the copper film. Furthermore, these amino acids can efficiently capture unnecessary metals from the surface of the object to be polished after polishing, and can efficiently remove unnecessary metals from the surface of the object to be polished. Further, when a water-soluble polymer described later is used in combination, depending on the type and amount of addition, the water-soluble polymer may be adsorbed on the surface of the copper film, thereby inhibiting polishing and reducing the polishing rate. Even in such a case, the combined use of the amino acid (B) has an effect of increasing the polishing rate of the copper film despite the addition of the water-soluble polymer. Further, by containing the amino acid (B), it is possible to promote the liberation into the solution by inhibiting the adsorption of sodium ions and potassium ions, which are crushed during the polishing and eluted from the silica particles, onto the copper film surface. As a result, it can be effectively removed from the surface of the workpiece.

  The content of the amino acid (B) is preferably 0.001 to 3.0% by mass, more preferably 0.01 to 2.0% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. . If the amino acid content is less than the above range, dishing of the copper film may occur. On the other hand, when the content of the amino acid exceeds the above range, the silica particles may aggregate.

1.3 (C) Organic acid having nitrogen-containing heterocycle and carboxyl group The chemical mechanical polishing aqueous dispersion according to this embodiment may contain (C) an organic acid having a nitrogen-containing heterocycle and a carboxyl group. it can. The organic acid having the (C) nitrogen-containing heterocyclic ring and the carboxyl group can enhance the effect of the (B) amino acid when used in combination with the (B) amino acid. (C) As an organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group, for example, an organic acid containing a heterocyclic six-membered ring having at least one nitrogen atom, an organic acid containing a heterocyclic compound consisting of a heterocyclic five-membered ring, etc. Can be mentioned. More specifically, quinaldic acid, quinolinic acid, quinoline-8-carboxylic acid, picolinic acid, xanthurenic acid, quinurenic acid, nicotinic acid, anthranilic acid and the like can be mentioned.

  The content of the organic acid having (C) the nitrogen-containing heterocycle and the carboxyl group is preferably 0.001 to 3.0% by mass, more preferably 0, based on the total mass of the chemical mechanical polishing aqueous dispersion. 0.01 to 2.0% by mass. (C) If the content of the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group is less than the above range, dishing of the copper film may be caused. On the other hand, if the content of (C) the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group exceeds the above range, the silica particles may aggregate.

1.4 Other Additives 1.4.1 Oxidizing Agent The chemical mechanical polishing aqueous dispersion according to this embodiment may contain an oxidizing agent as necessary. Examples of the oxidizing agent include ammonium persulfate, potassium persulfate, hydrogen peroxide, ferric nitrate, diammonium cerium nitrate, iron sulfate, ozone, hypochlorous acid and its salts, and potassium periodate, peracetic acid, etc. Is mentioned. These oxidizing agents can be used alone or in combination of two or more. Of these oxidizing agents, ammonium persulfate, potassium persulfate and hydrogen peroxide are particularly preferred in view of oxidizing power, compatibility with the protective film, ease of handling, and the like. The content of the oxidizing agent is preferably 0.05 to 5% by mass, more preferably 0.08 to 3% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. When the content of the oxidizing agent is less than the above range, a sufficient polishing rate for the copper film may not be obtained. On the other hand, when the content exceeds the above range, dishing or corrosion of the copper film may be caused.

1.4.2 Water-soluble polymer The chemical mechanical polishing aqueous dispersion according to this embodiment may contain a water-soluble polymer, if necessary. By adding a water-soluble polymer, dishing and corrosion of the copper film can be effectively suppressed.

  Examples of the water-soluble polymer include polyacrylic acid and its salt, polymethacrylic acid and its salt, polyvinyl alcohol, polyvinyl pyrrolidone, polyacrylamide and the like. Among these water-soluble polymers, polyvinyl pyrrolidone having a carbonyl group in the repeating unit, polymethacrylic acid and a salt thereof, polyacrylic acid and a salt thereof, or a derivative thereof is preferable. Polyacrylic acid and polymethacrylic acid are more preferable in that they do not affect the stability of the abrasive grains. Polyacrylic acid is particularly preferable because it can impart an appropriate viscosity to the chemical mechanical polishing aqueous dispersion according to the present embodiment.

  As the weight average molecular weight of the water-soluble polymer, for example, a weight average molecular weight (Mw) in terms of polyethylene glycol measured by GPC (gel permeation chromatography) can be applied. The water-soluble polymer has a weight average molecular weight (Mw) of preferably 10,000 to 1,500,000, more preferably 40,000 to 1,200,000. When the weight average molecular weight is within the above range, polishing friction can be greatly reduced, so that the occurrence of dishing or corrosion of the copper film can be suppressed. When the weight average molecular weight is smaller than the lower limit, the effect of reducing polishing friction is small, and the effect of suppressing the dishing or corrosion of the copper film is poor. On the other hand, when the weight average molecular weight is larger than the above upper limit, (A) the storage stability of the silica particles may be impaired, the viscosity of the aqueous dispersion is excessively increased, and a load is applied to the polishing liquid supply device. Problems may occur.

  The content of the water-soluble polymer is preferably 0.001 to 1.0% by mass, more preferably 0.01 to 0.5% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. . When the content of the water-soluble polymer is less than the above range, the effect of reducing polishing friction is small, and the effect of suppressing the dishing or corrosion of the copper film is inferior. On the other hand, when the content of the water-soluble polymer exceeds the above range, the silica particles may be aggregated.

  In general, when abrasive grains containing a large amount of sodium or potassium are used in the chemical mechanical polishing aqueous dispersion, sodium or potassium derived from the abrasive grains remains on the surface of the object to be polished even by a cleaning operation after polishing. It is thought to cause deterioration of the electrical characteristics of the device, and its use has been avoided. However, by adding the water-soluble polymer, the surface of the copper film is effectively protected, and adsorption of sodium and potassium to the surface of the copper film can be suppressed. It becomes possible to remove sodium and potassium. Furthermore, since the water-soluble polymer can be easily removed by a cleaning operation, it does not remain on the surface of the copper film and deteriorate the electrical characteristics of the device.

1.4.3 Surfactant The chemical mechanical polishing aqueous dispersion according to this embodiment may contain a surfactant as necessary. Surfactants include nonionic surfactants, anionic surfactants or cationic surfactants.

  As said nonionic surfactant, the nonionic surfactant which has a triple bond is mentioned, for example. Specifically, acetylene glycol and its ethylene oxide adduct, acetylene alcohol, etc. are mentioned. Also included are silicone surfactants, polyvinyl alcohol, cyclodextrin, polyvinyl methyl ether, and hydroxyethyl cellulose.

  Examples of the anionic surfactant include carboxylate, sulfonate, sulfate ester salt, phosphate ester salt and the like. Examples of the carboxylate include fatty acid soap and alkyl ether carboxylate. Examples of the sulfonate include alkyl benzene sulfonate, alkyl naphthalene sulfonate, α-olefin sulfonate, and the like. Examples of sulfate salts include higher alcohol sulfate salts, alkyl ether sulfate salts, polyoxyethylene alkylphenyl ether sulfate salts, and the like. Examples of the phosphate ester salt include alkyl phosphate ester salts.

  Examples of the cationic surfactant include aliphatic amine salts and aliphatic ammonium salts. These surfactants can be used alone or in combination of two or more.

  The content of the surfactant is preferably 0.001 to 1.0% by mass, more preferably 0.005 to 0.5% by mass, based on the total mass of the chemical mechanical polishing aqueous dispersion. When the content of the surfactant is within the above range, it is possible to achieve both an appropriate polishing rate and a good surface to be polished.

1.5 pH
The pH of the chemical mechanical polishing aqueous dispersion according to this embodiment is preferably 6 to 12, more preferably 7 to 11.5, and particularly preferably 8 to 11. When the pH is less than 6, hydrogen bonds between silanol groups present on the surface of the silica particles cannot be broken, and the silica particles may be aggregated. On the other hand, if the pH is higher than 12, the basicity is too strong, which may cause wafer defects. As a means for adjusting the pH, for example, adjusting the pH by adding a pH adjuster represented by a basic salt such as potassium hydroxide, ammonia, ethylenediamine, TMAH (tetramethylammonium hydroxide), etc. Can do.

1.6 Method for Producing Chemical Mechanical Polishing Aqueous Dispersion The chemical mechanical polishing aqueous dispersion according to this embodiment is obtained by directly adding (A) silica particles, (B) amino acids, and other additives to pure water. Can be prepared by mixing and stirring. The chemical mechanical polishing aqueous dispersion thus obtained may be used as it is, but a chemical mechanical polishing aqueous dispersion containing each component in a high concentration (concentrated) is prepared and desired at the time of use. It may be used after diluting to a concentration of.

  It is also possible to prepare a plurality of liquids (for example, two or three liquids) containing any of the above-mentioned components and to use them by mixing them at the time of use. In this case, after preparing a chemical mechanical polishing aqueous dispersion by mixing a plurality of liquids, this may be supplied to the chemical mechanical polishing apparatus, or a plurality of liquids may be supplied individually to the chemical mechanical polishing apparatus. A chemical mechanical polishing aqueous dispersion may be formed on a surface plate.

  As a specific example, the chemical mechanical polishing water is composed of a liquid (I) which is an aqueous dispersion containing water and (A) silica particles, and a liquid (II) containing water and (B) an amino acid. A kit for preparing a system dispersion can be mentioned.

  The concentration of each component in the liquids (I) and (II) is particularly as long as the concentration of each component in the chemical mechanical polishing aqueous dispersion finally prepared by mixing these liquids is within the above range. It is not limited. For example, liquids (I) and (II) containing each component at a concentration higher than the concentration of the chemical mechanical polishing aqueous dispersion are prepared, and the liquids (I) and (II) are diluted as necessary at the time of use. Then, these are mixed to prepare a chemical mechanical polishing aqueous dispersion in which the concentration of each component is in the above range. Specifically, when the liquids (I) and (II) are mixed at a weight ratio of 1: 1, the liquids (I) and (I) having a concentration twice the concentration of the chemical mechanical polishing aqueous dispersion are used. II) may be prepared. Moreover, after preparing liquid (I) and (II) of the density | concentration of 2 times or more of the density | concentration of the chemical mechanical polishing aqueous dispersion, and mixing these by 1: 1 weight ratio, each component becomes the said range. You may dilute with water. As described above, the storage stability of the aqueous dispersion can be improved by separately preparing the liquid (I) and the liquid (II).

  When the kit is used, the method and timing of mixing the liquid (I) and the liquid (II) are not particularly limited as long as the chemical mechanical polishing aqueous dispersion is formed at the time of polishing. For example, after the liquid (I) and the liquid (II) are mixed to prepare the chemical mechanical polishing aqueous dispersion, this may be supplied to a chemical mechanical polishing apparatus, or the liquid (I) and the liquid ( II) may be supplied independently to a chemical mechanical polishing apparatus and mixed on a surface plate. Alternatively, the liquid (I) and the liquid (II) may be independently supplied to the chemical mechanical polishing apparatus and mixed in line in the apparatus, or a mixing tank is provided in the chemical mechanical polishing apparatus, You may mix. In line mixing, a line mixer or the like may be used in order to obtain a more uniform chemical mechanical polishing aqueous dispersion.

1.7 Applications The chemical mechanical polishing aqueous dispersion according to this embodiment can be suitably used for chemical mechanical polishing of an object to be processed (for example, a semiconductor device) having a copper film on its surface. That is, according to the chemical mechanical polishing aqueous dispersion according to this embodiment, (B) by containing amino acids, the surface roughness of the copper film is suppressed and high flatness is maintained, and affinity with copper and copper ions is maintained. And the polishing rate for the copper film can be promoted. Thereby, the copper film on the surface can be polished at high speed and selectively without causing defects in the copper film and the low dielectric constant insulating film even under normal polishing pressure conditions. Moreover, according to the chemical mechanical polishing aqueous dispersion according to this embodiment, metal contamination of the wafer can be reduced.

  More specifically, the chemical mechanical polishing aqueous dispersion according to the present embodiment uses, for example, a damascene method in which a semiconductor device using a low dielectric constant insulating film as an insulating film and copper or a copper alloy as a wiring material is used. In the manufacturing process, the present invention can be applied to a process (first polishing process) in which the copper film on the barrier metal film is removed by chemical mechanical polishing.

  In the present invention, the “copper film” refers to a film formed from copper or a copper alloy, and the copper content in the copper alloy is preferably 95% by mass or more.

2. Chemical Mechanical Polishing Method A specific example of the chemical mechanical polishing method according to the present embodiment will be described in detail with reference to the drawings.

2.1 Object to be processed FIG. 4 shows an object to be processed 100 used in the chemical mechanical polishing method according to this embodiment.

(1) First, the low dielectric constant insulating film 20 is formed by a coating method or a plasma CVD method. Examples of the low dielectric constant insulating film 20 include inorganic insulating films and organic insulating films. Examples of the inorganic insulating film include a SiOF film (k = 3.5 to 3.7), a Si—H containing SiO ₂ film (k = 2.8 to 3.0), and the like. As the organic insulating film, a carbon-containing SiO ₂ film (k = 2.7 to 2.9), a methyl group-containing SiO ₂ film (k = 2.7 to 2.9), a polyimide film (k = 3.0). To 3.5), Parylene film (k = 2.7 to 3.0), Teflon (registered trademark) film (k = 2.0 to 2.4), amorphous carbon (k = <2.5) (Where k represents a dielectric constant).

  (2) An insulating film 30 is formed on the low dielectric constant insulating film 20 by using a CVD method or a thermal oxidation method. Examples of the insulating film 30 include a TEOS film.

  (3) The wiring recess 40 is formed by etching so that the low dielectric constant insulating film 20 and the insulating film 30 communicate with each other.

  (4) The barrier metal film 50 is formed using the CVD method so as to cover the surface of the insulating film 30 and the bottom and inner wall surface of the wiring recess 40. The barrier metal film 50 is preferably Ta or TaN from the viewpoint of excellent adhesion to the copper film and diffusion barrier properties with respect to the copper film. However, the barrier metal film 50 is not limited to this and is Ti, TiN, Co, Mn, Ru, or the like. May be.

  (5) By depositing copper on the barrier metal film 50 to form the copper film 60, the workpiece 100 is obtained.

2.2 Chemical Mechanical Polishing Method In order to remove the copper film 60 deposited on the barrier metal film 50 of the object 100, chemical mechanical polishing is performed using the chemical mechanical polishing aqueous dispersion according to the present invention. First, the copper film 60 is continuously polished by chemical mechanical polishing until the barrier metal film 50 is exposed. Usually, it is necessary to stop the polishing after confirming that the barrier metal film 50 is exposed. However, the chemical mechanical polishing aqueous dispersion according to the present invention has a very high polishing rate for the copper film 60, but hardly polishes the barrier metal film. For this reason, as shown in FIG. 5, since the chemical mechanical polishing cannot proceed when the barrier metal film 50 is exposed, the chemical mechanical polishing can be self-stopped.

  In the chemical mechanical polishing method according to the present embodiment, a commercially available chemical mechanical polishing apparatus can be used. As a commercially available chemical mechanical polishing apparatus, for example, “EPO-112” and “EPO-222” manufactured by Ebara Manufacturing Co., Ltd .; “LGP-510” and “LGP-552” manufactured by Lapmaster SFT, Applied Materials Manufactured, model “Mirra” and the like.

Preferred polishing conditions should be set as appropriate depending on the chemical mechanical polishing apparatus to be used. For example, when “EPO-112” is used as the chemical mechanical polishing apparatus, the following conditions may be used.
-Surface plate rotation speed: preferably 30-120 rpm, more preferably 40-100 rpm
Head rotation speed: preferably 30 to 120 rpm, more preferably 40 to 100 rpm
-Platen rotation speed / head rotation speed ratio; preferably 0.5-2, more preferably 0.7-1.5
Polishing pressure; preferably 60 to 200 gf / cm ² , more preferably 100 to 150 gf / cm ²
-Chemical mechanical polishing aqueous dispersion supply rate; preferably 50 to 400 mL / min, more preferably 100 to 300 mL / min As described above, in this example, a semiconductor device having excellent flatness of the surface to be polished is obtained. In addition, chemical mechanical polishing can be self-stopped without excessive polishing of the copper film. Further, even if polishing is performed with a normal polishing pressure, the polishing friction can be significantly reduced, so that the load on the lower insulating film 30 and the low dielectric constant insulating film 20 can be reduced.

3. Examples Hereinafter, the present invention will be described by way of examples. However, the present invention is not limited to these examples.

3.1 Preparation of Silica Particle Dispersion No. 3 water glass (silica concentration: 24% by mass) was diluted with water to obtain a diluted sodium silicate aqueous solution having a silica concentration of 3.0% by mass. This diluted sodium silicate aqueous solution was passed through a hydrogen-type cation exchange resin layer to obtain an active silicic acid aqueous solution of pH 3.1 from which most of the sodium ions were removed. Thereafter, 10% by weight aqueous potassium hydroxide solution was immediately added with stirring to adjust the pH to 7.2, followed by further heating and boiling for 3 hours. To the resulting aqueous solution, 10 times the amount of the active silicic acid aqueous solution whose pH was previously adjusted to 7.2 was added little by little over 6 hours to grow the average particle size of the silica particles to 26 nm.

  Next, the dispersion aqueous solution containing the silica particles is concentrated under reduced pressure (boiling point 78 ° C.), and the silica concentration is 32.0 mass%, the average particle diameter of silica is 26 nm, and the pH is 9.8. Got. This silica particle dispersion is again passed through the hydrogen-type cation exchange resin layer to remove most of sodium, and then 10% by mass of potassium hydroxide aqueous solution is added, and the silica particle concentration: 28.0% by mass, pH A silica particle dispersion A of 10.0 was obtained.

  Silica particles are recovered from the silica particle dispersion A by centrifugation, the silica particles recovered with dilute hydrofluoric acid are dissolved, and sodium is added using ICP-MS (manufactured by PerkinElmer, model number “ELAN DRC PLUS”). And potassium was measured. Furthermore, ammonium ion was measured using ion chromatography (manufactured by DIONEX, model number “ICS-1000”). As a result, the sodium content was 88 ppm, the potassium content was 5500 ppm, and the ammonium content was 5 ppm.

  Silica particle dispersion A was diluted to 0.01% with ion-exchanged water, placed on a collodion membrane having Cu grit having a mesh size of 150 μm, and dried at room temperature. Thus, after preparing a sample for observation so as not to break the particle shape on the Cu grit, using a transmission electron microscope (H-7650, manufactured by Hitachi High-Technologies Corporation) Images were taken, the major axis and minor axis of 50 colloidal silica particles were measured, and the average value was calculated. When the ratio (Rmax / Rmin) was calculated from the average value of the major axis (Rmax) and the average value of the minor axis (Rmin), it was 1.1.

  The average particle size calculated from the specific surface area measured using the BET method was 26 nm. In addition, in the surface area measurement of the colloidal silica particle by BET method, the value which measured the silica particle collect | recovered by concentrating and drying the silica particle dispersion A was used.

  The silica particle dispersions B to G were obtained by the same method as described above while controlling the heat aging time, the type and amount of the basic compound, and the like. Table 1 summarizes the physical property values of the silica particle dispersions A to G produced.

3.2 Synthesis of water-soluble polymer 3.2.1 Preparation of aqueous polyvinylpyrrolidone solution In a flask, 60 g of N-vinyl-2-pyrrolidone, 240 g of water, 0.3 g of a 10% by mass sodium sulfite aqueous solution and 10% by mass of t -Polyvinylpyrrolidone (K30) was produced | generated by adding 0.3 g of butyl hydroperoxide aqueous solution, and stirring for 5 hours under 60 degreeC nitrogen atmosphere. The obtained polyvinylpyrrolidone (K30) was measured by gel permeation chromatography (manufactured by Tosoh Corporation, apparatus model number “HLC-8120”, column model number “TSK-GEL α-M”, eluent is NaCl aqueous solution / acetonitrile). As a result, the weight average molecular weight (Mw) in terms of polyethylene glycol was 40,000. Further, the amount of amino group calculated from the charged amount of monomer was 0 mol / g, and the amount of cationic functional group was 0 mol / g.

  Moreover, polyvinylpyrrolidone (K90) was produced | generated by adjusting the addition amount of the said component, reaction temperature, and reaction time suitably. In addition, as a result of measuring the weight average molecular weight (Mw) of the obtained polyvinyl pyrrolidone (K90) by the method similar to the above, it was 1,200,000. The amount of amino group calculated from the charged amount of monomer was 0 mol / g, and the amount of cationic functional group was 0 mol / g.

3.2.2 Vinylpyrrolidone / diethylaminomethyl methacrylate copolymer A flask equipped with a reflux condenser, a dropping funnel, a thermometer, a glass tube for nitrogen substitution, and a stirrer was equipped with 70 parts by mass of diethylaminomethyl methacrylate and cetyl acrylate 5 Part by mass, 10 parts by mass of stearyl methacrylate, 10 parts by mass of N-vinylpyrrolidone, 5 parts by mass of butyl methacrylate, and 100 parts by mass of isopropyl alcohol, 0.2 parts by mass of azobisisobutyronitrile (AIBN) are added, Polymerization was performed at 60 ° C. under a nitrogen stream. Next, diethyl sulfate having a molar number of 0.35 times that of 1 mol of diethylaminoethyl methacrylate was added and heated under reflux at 50 ° C. for 10 hours under a nitrogen stream to synthesize a vinylpyrrolidone / diethylaminomethyl methacrylate copolymer. .

  As a result of measuring the obtained copolymer by gel permeation chromatography (manufactured by Tosoh Corporation, apparatus model number “HLC-8120”, column model number “TSK-GEL α-M”, eluent is NaCl aqueous solution / acetonitrile), The weight average molecular weight (Mw) in terms of polyethylene glycol was 400,000. Further, the amount of amino group calculated from the charged amount of monomer was 0.001 mol / g, and the amount of cationic functional group was 0.0006 mol / g.

3.2.3 Vinylpyrrolidone / vinyl acetate copolymer “PVP / VA copolymer S-630 (molecular weight 45,000, vinylpyrrolidone: vinyl acetate = 60: 40)” (all manufactured by ISP Japan) was used.

3.3 Preparation of Chemical Mechanical Polishing Aqueous Dispersion 50 parts by mass of ion-exchanged water and silica particle dispersion A containing 0.5 parts by mass in terms of silica are placed in a polyethylene bottle, and 1 is added to alanine. .2 parts by mass, 0.03 parts by mass of an acetylenic diol type nonionic surfactant (trade name “Surfinol 485”, manufactured by Air Products), and an aqueous polyvinylpyrrolidone (K30) solution (weight average molecular weight 40,000) An amount corresponding to 0.05 parts by mass was added, and a 10% by mass aqueous potassium hydroxide solution was further added to adjust the pH of the chemical mechanical polishing aqueous dispersion to 9.3. Next, 1.5 parts by mass of ammonium persulfate was added and stirred for 15 minutes. Finally, ion-exchanged water is added so that the total amount of all the components becomes 100 parts by mass, and then filtered through a filter having a pore size of 5 μm to obtain a chemical mechanical polishing aqueous dispersion S1 having a pH of 9.3. It was.

  Silica particles are recovered from the chemical mechanical polishing aqueous dispersion S1 by centrifugation, and the silica particles recovered with dilute hydrofluoric acid are dissolved. Then, ICP-MS (manufactured by PerkinElmer, model number “ELAN DRC PLUS”) is used. Used to measure sodium and potassium. Furthermore, ammonium ion was measured using ion chromatography (manufactured by DIONEX, model number “ICS-1000”). As a result, the sodium content was 88 ppm, the potassium content was 5500 ppm, and the ammonium ion content was 5 ppm. From this result, even if silica particles are recovered from the chemical mechanical polishing aqueous dispersion, sodium, potassium, and ammonium ions contained in the silica particles can be quantified, and the same result as the silica particle dispersion can be obtained. I understood it.

  Chemical mechanical polishing aqueous dispersions S2 to S10 are the same as those described above except that the types and contents of silica particle dispersion, organic acid, and other additives are changed as shown in Table 2. It was produced in the same manner as dispersion S1.

  In Table 2, the trade name “Emulgen 104P” (manufactured by Kao Corporation, polyoxyethylene lauryl ether) was used as the “alkyl ether type nonionic surfactant”. In Table 2, “Acetylene diol type nonionic surfactant” is trade name “Surfinol 485” (manufactured by Air Products, 2,4,7,9-tetramethyl-5-decyne-4,7-diol- Dipolyoxyethylene ether) was used.

  The obtained chemical mechanical polishing aqueous dispersions S1 to S10 were put in a 100 cc glass tube and stored at 25 ° C. for 6 months, and the presence or absence of sedimentation was confirmed visually. The results are shown in Table 2. In Table 2, “◯” indicates that no sedimentation and difference in density of the particles are observed, “Δ” indicates that only the difference in density is observed, and “x” indicates that both sedimentation and density differences of the particles are observed. It was evaluated.

3.4 Chemical Mechanical Polishing Test 3.4.1 Polishing Evaluation of Unpatterned Substrate Chemical Mechanical Polishing Equipment (Ebara Seisakusho, Model “EPO112”) and Porous Polyurethane Polishing Pad (Nitta Haas, Part Number “IC1000”) )) And supplying any one of the chemical mechanical polishing aqueous dispersions S1 to S10, the following various polishing rate measuring substrates are subjected to a polishing treatment under the following polishing conditions for 1 minute. The polishing rate and wafer contamination were evaluated by the above method. The results are also shown in Table 2.

3.4.1a Polishing rate measurement (1) Polishing rate measuring substrate-A silicon substrate with an 8-inch thermal oxide film on which a copper film having a thickness of 15,000 angstroms is laminated.
A silicon substrate with an 8-inch thermal oxide film on which a tantalum film having a thickness of 2,000 angstroms is laminated.

(2) Polishing conditions and head rotation speed: 70 rpm
Head load: 200 gf / cm ²
・ Table rotation speed: 70rpm
-Supply speed of chemical mechanical polishing aqueous dispersion: 200 mL / min In this case, the supply speed of the chemical mechanical polishing aqueous dispersion refers to a value obtained by assigning the total supply amount of all supply liquids per unit time.

(3) Polishing rate calculation method For the copper film and the tantalum film, the film thickness after the polishing treatment is measured using an electrically conductive film thickness measuring instrument (model OMNIMAP RS75, manufactured by KLA-Tencor Corporation) The polishing rate was calculated from the film thickness reduced by chemical mechanical polishing and the polishing time.

3.4.1b Wafer contamination The copper film was polished in the same manner as in “3.4.1a Measurement of polishing rate”. Subsequently, ultrapure water was dropped on the surface of the sample to extract the residual metal on the surface of the copper film, and the extract was quantified by ICP-MS (manufactured by Yokogawa Analytical Systems, model number “Agilent 7500s”). The results are also shown in Table 2. Wafer contamination, is preferably 3.0atom / cm ² or less, and more preferably 2.5atom / cm ² or less.

3.4.2 Polishing Evaluation of Patterned Wafer A chemical polishing machine (Ebara Seisakusho, model “EPO112”) is equipped with a porous polyurethane polishing pad (Nitta Haas, product number “IC1000”). While supplying any one of the mechanical polishing aqueous dispersions S1 to S10, with respect to the wafer with the following pattern, the point of time when the tantalum film was detected on the surface to be polished was determined as the polishing end point. The polishing treatment was performed in the same manner as the polishing conditions in “4.1a Measurement of polishing rate”, and the flatness and the presence or absence of defects were evaluated by the following methods. The results are also shown in Table 2.

(1) Patterned wafer A silicon nitride film having a thickness of 1,000 angstroms was deposited on a silicon substrate, and a low dielectric constant insulating film (black diamond film) was sequentially laminated on the film to 4,500 angstroms, and further a PETEOS film having a thickness of 500 angstroms. Thereafter, a “SEMATECH 854” mask pattern was processed, and a test substrate in which a 250 angstrom tantalum film, a 1,000 angstrom copper seed film and a 10,000 angstrom copper plating film were sequentially laminated thereon was used.

3.4.2a Evaluation of flatness Copper wiring width (line, L) / insulation per surface to be polished of the patterned wafer after the polishing process using a high resolution profiler (model “HRP240ETCH” manufactured by KLA Tencor) The dishing amount (nm) in the copper wiring portion having a film width (space, S) of 100 μm / 100 μm was measured. The results are also shown in Table 2. It should be noted that the dishing amount is displayed as negative when the upper surface of the copper wiring is convex above the reference surface (upper surface of the insulating film). The dishing amount is preferably -5 to 30 nm, more preferably -2 to 20 nm.

  The amount of erosion in the portion where the fine wiring length in the pattern of 9 μm / 1 μm in the copper wiring width (line, L) / insulating film width (space, S) is continuously 1000 μm per polished surface of the patterned wafer after the polishing process (Nm) was measured. The results are also shown in Table 2. Note that the erosion amount is indicated by a minus value when the upper surface of the copper wiring is convex above the reference surface (upper surface of the insulating film). The erosion amount is preferably -5 to 30 nm, more preferably -2 to 20 nm.

3.4.2b Corrosion Evaluation 10 nm ² using a defect inspection apparatus (manufactured by KLA Tencor, model “2351”) for a copper area of 1 cm × 1 cm per surface to be polished of the patterned wafer after the polishing process. The number of defects having a size of ˜100 nm ² was evaluated. In Table 2, ◯ is the most preferable state with 0 to 10 corrosions. Δ is 11 to 100, which is a preferable condition. X is a state where 101 or more corrosions exist, and it is determined that the polishing performance is poor.

3.4.3 Evaluation Results In Examples 1 to 5, the polishing rate for the copper film was sufficiently high as 8,000 angstrom / min or more, and the polishing rate for the barrier metal film was sufficiently low as 1 to 2 angstrom / min. Therefore, it was found that the polishing selectivity for the copper film was excellent. In any of the examples, there was almost no wafer contamination, no defects were observed, and the storage stability of the chemical mechanical polishing aqueous dispersion was good.

  On the other hand, S6 used in Comparative Example 1 has a composition in which (B) amino acid is deleted from S1 used in Example 1. Then, in the polishing test of the substrate for measuring the polishing rate, the polishing rate for the copper film was as low as 1,000 angstroms / minute, which was not practical.

  S7 used in Comparative Example 2 has a composition containing maleic acid instead of the amino acid (B) used in Example 1. Then, in the polishing test of the substrate for polishing rate measurement, the polishing rate for the copper film was as low as 2,000 angstroms / minute, which was not practical. On the other hand, the polishing rate for the Ta film was 20 angstroms / minute, and it could not be said that the polishing selectivity for the copper film was excellent.

  Since S8 used in Comparative Example 3 uses silica particle dispersion E containing sodium at a high concentration (11,250 ppm), wafer contamination occurred in the polishing test of the polishing rate measuring substrate. . Further, although the polishing rate for the copper film is sufficient at 12,000 angstrom / min, the polishing rate for the Ta film is 20 angstrom / min, and it cannot be said that the polishing selectivity for the copper film is excellent. Further, in the polishing test of the patterned wafer, it was not possible to suppress the occurrence of copper film dishing and insulating film erosion.

  Since S9 used in Comparative Example 4 uses the silica particle dispersion F having a low potassium or ammonium ion content, the storage stability was not good. In the polishing test of the substrate for polishing rate measurement, the polishing rate for the copper film is 8,000 angstroms / minute, but the polishing rate for the Ta film is 12 angstroms / minute, and the polishing selectivity for the copper film is excellent. That wasn't true. Further, in the polishing test of the patterned wafer, it was not possible to suppress the occurrence of copper film dishing and insulating film erosion.

  Since S10 used in Comparative Example 5 uses the silica particle dispersion G having a small content of potassium or ammonium ions, the storage stability is poor. In the polishing test of the substrate for polishing rate measurement, the polishing rate for the copper film was not sufficient at 7,000 angstroms / minute.

  From the above results, it was found that by using the chemical mechanical polishing aqueous dispersions of Examples 1 to 5, it was possible to reduce metal contamination of the wafer and achieve both high polishing rate and high planarization characteristics for the copper film. .

10a, 10b, 10c ... Silica particles, 20 ... Low dielectric constant insulating film, 30 ... Insulating film (cap layer), 40 ... Recess for wiring, 50 ... Barrier metal film, 60 ... Copper film, 100 ... Object to be processed

Claims (8)

(A) silica particles;
(B) at least one amino acid selected from glycine, alanine and histidine ;
An aqueous dispersion for chemical mechanical polishing for polishing a copper film containing
The (A) silica particle is a chemical mechanical polishing aqueous dispersion having the following chemical properties.
Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm. Oite to claim 1,
An aqueous dispersion for chemical mechanical polishing, further comprising (C) an organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group. In claim 2 ,
The chemical mechanical polishing aqueous dispersion, wherein (C) the organic acid having a nitrogen-containing heterocyclic ring and a carboxyl group is quinaldic acid or quinolinic acid. In any one of Claims 1 to 3 ,
The ratio (Rmax / Rmin) of the major axis (Rmax) to the minor axis (Rmin) of the (A) silica particles is 1.0 to 1.5, and is an aqueous dispersion for chemical mechanical polishing. In any one of Claims 1 thru | or 4 ,
(A) The aqueous dispersion for chemical mechanical polishing whose average particle diameter computed from the specific surface area measured using the BET method of the said silica particle is 10-100 nm. In any one of Claims 1 thru | or 5 ,
An aqueous dispersion for chemical mechanical polishing having a pH of 6-12. A method for chemically mechanically polishing an object having a copper film formed on a barrier metal film,
Using the chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 6 , the copper film is chemically mechanically polished, and the chemical mechanical polishing is stopped when the barrier metal film is exposed. Chemical mechanical polishing method. A method for producing an aqueous dispersion for chemical mechanical polishing by adding (A) silica particles and (B) at least one amino acid selected from glycine, alanine and histidine ,
Said (A) silica particle is a manufacturing method of the aqueous dispersion for chemical mechanical polishing which has the following chemical property.
Sodium, potassium and ammonium ion content measured from elemental analysis by ICP emission spectrometry or ICP mass spectrometry and quantitative analysis of ammonium ion by ion chromatography, sodium content: 5 to 500 ppm, potassium and ammonium ion The content of at least one selected from: satisfies the relationship of 100 to 20000 ppm.

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