JP5487847B2 - Electronic device package, manufacturing method thereof, and electronic apparatus - Google Patents

Description

  The present invention relates to an electronic device package in which an electronic device is mounted on a substrate and a manufacturing method thereof. The present invention also relates to an electric device in which the electronic device package of the present invention is mounted.

  In recent years, electronic devices such as mobile phones and notebook PCs are required to be thinner and smaller. Therefore, in order to reduce the thickness of an electronic device package such as a semiconductor package mounted on an electronic device, an electronic device or a circuit board (interposer substrate) constituting the semiconductor package has been thinned. Further, in order to reduce the size of the electronic device package, the number of electrodes of the electronic device and the interposer substrate is increased, and the pitch is also narrowed. Electronic device packages in which such an electronic device is mounted on an interposer substrate include a flip chip (FC) mounting package and a wafer level chip size package (WLCSP).

  FIG. 5 shows a schematic cross-sectional view of an electronic device package according to the background art. In the electronic device package 100, the electronic device 106 includes a conductive pad 105 formed on a circuit formation surface of the electronic device 106 and a conductive pad 102 formed on the interposer substrate 101 electrically through a conductive member 103. It is flip-chip mounted on the interposer substrate 102 so as to be connected. A resin 104 is filled between the electronic device 106 and the interposer substrate 101 in order to improve electrical reliability.

  The electronic device package 100 can be manufactured, for example, by the following method. First, the conductive member 103 is formed on the conductive pad 105 formed on the circuit formation surface of the electronic device 106 or the conductive pad 102 formed on the interposer substrate 101. Next, the electronic device 106 is mounted on the interposer substrate 101 so that the conductive pads 102 and 105 face each other. After mounting, the conductive pads 102 and 105 are electrically connected by the conductive member 5 in a reflow process. Alternatively, the electronic device 106 is pressure-mounted on the interposer substrate 101, and a heat load is applied in a state where the conductive member 5 is in contact with the conductive pad 102 and the conductive pad 105. Are electrically connected by the conductive member 5.

  As the material of the conductive member 5, for example, bumps or solders using metals such as Au, Cu, Sn, Ag, Bi, In, Zn, Ni, Al, Pb, or the like, or epoxy resin, acrylic resin are used. , Resin and metal such as melamine resin, polyolefin resin, polyurethane resin, polycarbonate resin, polystyrene resin, polyether resin, polyamide resin, polyimide resin, fluorine resin, polyester resin, phenol resin, fluorene resin, benzocyclobutene resin, silicone resin A conductive resin or conductive paste in which particles are mixed may be used.

  In the electronic device package 100 as shown in FIG. 5, the linear expansion coefficient of the electronic device 106 and the linear expansion coefficient of the interposer substrate 101 may be greatly different. For example, Si (linear expansion coefficient of about 3 ppm / ° C.) is used as the material for the electronic device 1, while epoxy-based, phenol-based resins (linear expansion coefficient: 10 ppm / ° C. to 40 ppm / ° C.) are used as the material for the interposer substrate. This is the case. In this case, in the manufacturing method of the electronic device package, when the intermediate product is heated and cooled, a difference in expansion amount and contraction amount occurs between the electronic device 106 and the interposer substrate 101. Due to this difference, the electronic device package 100 is warped. For example, when the intermediate product is cooled after being heated, the interposer substrate 101 has a higher shrinkage rate than the electronic device 106 as shown in FIG.

  Due to this warpage, the conductive member 5 is likely to crack. As a result, the electrical connection between the electronic device 1 and the interposer substrate 2 becomes poor. In particular, when solder, a conductive resin, or a conductive paste is used as the conductive member, there is a high possibility that an electrical continuity failure will occur.

  On the other hand, increasing the thickness of the interposer substrate 101 in order to suppress warpage goes against the thinning of the electronic device package and cannot be selected.

  In addition, in the WLCSP in which the substrate facing the surface on which the conductive pad of the electronic device, that is, the electrode is arranged, is realized by the rewiring layer, when polyimide is used for the rewiring layer, the polyimide is cured. Need to be heated. For this reason, a difference occurs in the amount of expansion / contraction between the electronic device and the redistribution layer due to heating / cooling, and thus there is a problem that warpage occurs as in the flip chip mounting package, resulting in poor electrical conduction.

  For example, Patent Literature 1 and Patent Literature 2 disclose techniques for correcting warpage caused by a difference in linear expansion coefficient between an electronic device and a substrate.

  The semiconductor device described in Patent Literature 1 includes a substrate, a semiconductor chip mounted on the substrate, a resin member that bonds the substrate and the semiconductor chip, and a surface opposite to the semiconductor chip surface to which the resin member is bonded. And an affixed correction member. The correction member corrects a warp generated in the semiconductor chip due to expansion or contraction of a resin member having a linear expansion coefficient different from that of the semiconductor chip.

  The semiconductor device described in Patent Document 2 includes a semiconductor element having a first electrode on one surface, a circuit board having a second electrode on a mounting surface, a warp suppressing layer that suppresses at least the semiconductor element from warping, A stress relieving layer for relieving stress generated between the semiconductor element and the warp suppressing layer. The semiconductor element is mounted on the circuit board such that the second electrode and the first electrode of the circuit board are electrically connected, and the one surface faces the mounting surface of the circuit board. The stress relaxation layer is formed on the other surface opposite to the one surface of the semiconductor element. The warp suppressing layer is laminated on the semiconductor element via a stress relaxation layer. The stress relaxation layer has a spacer that secures a predetermined distance between the semiconductor element and the warpage suppressing layer. The Young's modulus of the stress relaxation layer is lower than the Young's modulus of the warp suppressing layer. The linear expansion coefficient of the stress relaxation layer and the warp suppression layer is larger than the linear expansion coefficient of the semiconductor element.

  The package for housing a semiconductor element described in Patent Document 3 covers a ceramic insulating substrate having an opening in the center, a metallized wiring layer formed on or in the insulating substrate, and an opening in the insulating substrate. The external shape joined to the insulated substrate with the adhesive containing a thermosetting resin comprises a square-shaped heat sink. The semiconductor element is attached to the insulating substrate and the attachment surface side of the heat sink, and the adhesive that attaches the heat sink to the insulating substrate is an area outside the outer side including at least four corners of the heat sink by 1 mm or more. It is formed to protrude.

JP 2004-96015 A International Publication WO 2008/120705 JP 2002-76184 A

  The following analysis is given from the perspective of the present invention.

  As described in Patent Documents 1 to 3, in an electronic device package in which a metal layer for suppressing warpage is attached to an electronic device, in order to effectively suppress warpage due to heat treatment, It is necessary to transmit the tensile stress of the metal layer to the electronic device at the heating temperature.

  An object of the present invention is to provide an electronic device package that effectively suppresses warping caused by heat treatment.

According to a first aspect of the present invention, a substrate, an electronic device mounted on the substrate so that the first surface faces the substrate, and an adhesive layer formed on the second surface of the electronic device on the back side of the first surface And a metal layer attached to the electronic device via an adhesive layer at a maximum temperature of the heat treatment of 100 ° C. to 400 ° C. is provided. The Young's modulus at 250 ° C. of the adhesive layer is 1 MPa or more. The thickness of the metal layer is 20 μm or more and 50 μm or less. The Young's modulus at 25 ° C. of the metal layer is 100 GPa or more. The linear expansion coefficient at 25 ° C. to 400 ° C. of the metal layer is 10 ppm / ° C. or more. The Young's modulus at 250 ° C. of the metal layer is 25% or more and 100% or less with respect to the Young's modulus at 25 ° C. of the metal layer.

  According to a second aspect of the present invention, there is provided an electronic device in which the electronic device package of the present invention is mounted.

According to the third aspect of the present invention, the step of mounting the electronic device on the substrate so that the first surface of the electronic device faces the substrate, and the maximum temperature of the heat treatment is set to 100 ° C. to 400 ° C. A step of attaching a metal layer to the second surface of the electronic device on the back side of the substrate via the adhesive layer, and heat-treating the metal layer and the adhesive layer for a predetermined time at a temperature lower than the maximum temperature before the heat treatment at the maximum temperature. And a method of manufacturing an electronic device package is provided. The Young's modulus at 250 ° C. of the adhesive layer is 1 MPa or more. The thickness of the metal layer is 20 μm or more and 50 μm or less. The Young's modulus at 25 ° C. of the metal layer is 100 GPa or more. The linear expansion coefficient at 25 ° C. to 400 ° C. of the metal layer is 10 ppm / ° C. or more. The Young's modulus at 250 ° C. of the metal layer is 25% or more and 100% or less with respect to the Young's modulus at 25 ° C. of the metal layer.

  The present invention has at least one of the following effects.

  When a metal layer is attached to an electronic device mounted on a substrate via an adhesive layer, the metal layer is heated to the glass transition temperature or higher of the adhesive layer together with the adhesive layer. By this heat treatment, the metal layer is attached to the electronic device in an expanded (stretched) state. When the metal layer is cooled to room temperature after the heat treatment, the metal layer tends to shrink to its original size. At this time, the contraction force of the metal layer is transmitted to the electronic device and the substrate through the adhesive layer. This contractive force acts to make the electronic device side concave. Thereby, the curvature of the electronic device and board | substrate which curved so that the electronic device side might become convex shape can be reduced. In particular, in the present invention, since the Young's modulus at 250 ° C. of the adhesive layer is 1 MPa or more, the contraction force of the metal layer can be more efficiently transmitted to the electronic device.

  In addition, even when heat treatment is performed when the electronic device package of the present invention is mounted on a circuit board, the metal layer is expanded (stretched) together with the substrate by the heat treatment, so that a large warp is generated in the electronic device package. Can be suppressed. Thereby, the electronic device package can be mounted on the circuit board in a flattened state. Moreover, even if it cools to normal temperature, since a metal layer also shrinks with a board | substrate, it can suppress that curvature generate | occur | produces.

  Therefore, according to the present invention, it is possible to suppress electrical continuity failure and mounting failure in the electronic device package.

1 is a schematic plan view of an electronic device package according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the electronic device package taken along line II-II in FIG. 1. The schematic process drawing of the manufacturing method of the electronic device package concerning a 2nd embodiment of the present invention. The schematic process drawing of the manufacturing method of the electronic device package concerning a 3rd embodiment of the present invention. 1 is a schematic cross-sectional view of an electronic device package according to background art. 1 is a schematic cross-sectional view of an electronic device package according to background art.

  A preferable form of each viewpoint is described below.

  According to a preferred embodiment of the first aspect, the adhesive layer is formed on the entire second surface.

  According to a preferred form of the first aspect, the metal layer is formed so as to cover the entire second surface.

  According to the preferable form of the first aspect, the adhesive layer does not contain a filler.

  According to the preferable form of the first aspect, the adhesive layer contains a polyimide resin and an epoxy resin.

  According to the preferable form of the first aspect, the thickness of the adhesive layer is not less than 10 μm and not more than 50 μm.

  According to the preferable form of the first aspect, the glass transition temperature of the adhesive layer is 100 ° C. or higher and 400 ° C. or lower.

  An electronic device package according to a first embodiment of the present invention will be described. FIG. 1 shows a schematic plan view of an electronic device package according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the electronic device package taken along line II-II in FIG.

  The electronic device package 10 includes a substrate 11 and an electronic device 16 mounted on the substrate 11. A first conductive pad 12 is formed on the surface of the substrate 11 facing the electronic device 16. A second conductive pad 15 is formed on the first surface 16 a of the electronic device 16 facing the substrate 11. The first conductive pad 12 and the second conductive pad 15 are electrically connected by a conductive member 13. An underfill resin 14 may be filled between the substrate 11 and the electronic device 16. As the electronic device 16, for example, a semiconductor bare chip, a wafer level package, or the like can be used. As the substrate 11, for example, an interposer substrate such as a printed wiring board can be used.

  The electronic device package 10 further includes a metal layer 18 on the second surface 16b that is the back surface of the first surface 16a of the electronic device 16, and an adhesive layer 17 for bonding the metal layer 18 to the electronic device.

The adhesive layer 17 preferably has elasticity so that the metal layer 18 can be expanded and contracted during the heat treatment, and the expansion and contraction force of the metal layer 18 can be transmitted to the electronic device 16. For example, the Young's modulus at 250 ° C. of the adhesive layer 17 is preferably about 1 MPa or more. The adhesive layer 17 preferably has a Young's modulus so that it does not peel from the electronic device 16 or the metal layer 18 even after cooling to room temperature after the metal layer 18 is heat-treated to adhere to the electronic device 16. For example, the Young's modulus at 250 ° C. of the adhesive layer 17 is preferably 1 GPa or less. As will be described later in the manufacturing method, since the heat treatment temperature when the metal layer 18 is attached to the electronic device 16 is preferably about 100 ° C. to 400 ° C., the Young's modulus at 250 ° C. is taken into consideration. The Young's modulus of the adhesive layer 17 is measured according to JISK7161.

  The glass transition temperature of the adhesive layer 17 is preferably a temperature at which the stretching force of the metal layer 18 can be transmitted to the electronic device 16 during the heat treatment. For example, the glass transition temperature of the adhesive layer 17 is preferably about 100 ° C. or higher and 400 ° C. or lower. If the glass transition temperature of the adhesive layer 17 is less than 100 ° C., it is not preferable because the adhesive layer 17 absorbs the stretching force of the metal layer 18 and cannot be transmitted to the electronic device 16. Moreover, when the glass transition temperature of the adhesive layer 17 is higher than 400 ° C., it is necessary to perform heat treatment at a temperature higher than 400 ° C. when the metal layer is attached to the electronic device 18, which causes deterioration of the electronic device. Absent.

  For example, the adhesive layer 17 preferably contains a polyimide resin and an epoxy resin. When the adhesive layer 17 contains a polyimide resin and an epoxy resin, the polyimide resin content is 25% to 75% and the epoxy resin content is 25% to 75% in order to obtain the above Young's modulus range. It is preferable that the total content of the polyimide resin and the epoxy resin is 100% or less. For example, the adhesive layer 17 can be a thermoplastic or thermosetting film containing a polyimide resin and an epoxy resin. The adhesive layer 17 may contain a resin other than the polyimide resin and the epoxy resin in order to adjust the Young's modulus, glass transition temperature, adhesion temperature, adhesion strength, and the like.

  The adhesive layer 17 may be formed on a part of the second surface 16b of the electronic device 16, but is preferably formed on the entire second surface 16b of the electronic device 16. More preferably, the area of the adhesive layer 17 is larger than the area of the second surface 16 b of the electronic device 16.

  The thickness of the adhesive layer 17 is preferably about 10 μm to 50 μm. If the thickness of the adhesive layer 17 is out of this range, the warp of the entire electronic device package 10 tends to increase, or the metal layer 18 tends to peel off. Further, if the adhesive layer 17 is thick, the entire electronic device package 10 becomes thick, which is not preferable.

  The thickness of the adhesive layer 17 is preferably uniform so that the stretching force of the metal layer 18 can be evenly transmitted to the electronic device 16. For example, the adhesive layer 17 is preferably flat. The shape of the adhesive layer 17 is not particularly limited, but the same shape as the second surface 16b of the electronic device 16 so that the stretching force of the metal layer 18 can be more efficiently transmitted to the second surface 16b of the electronic device 16. (For example, a quadrangle) is preferable. Thereby, the stretching force of the metal layer 18 can be transmitted concentrically to the electronic device 16.

  It is preferable that the adhesive layer 17 does not contain a filler such as a granular material (filler) or a fibrous material (cloth). By not using the filler, the adhesive layer 17 can be made cheaper, and thereby the manufacturing cost of the electronic device package 10 can be reduced.

  The metal layer 18 generates a large force with a small amount of expansion and contraction and has a large amount of expansion / contraction per unit temperature in order to reduce the warp of the substrate 11 having a larger area than that of the metal layer 18, that is, elastic modulus and linear expansion. A material with a high rate is preferred. For example, the Young's modulus at 25 ° C. of the metal layer 18 is preferably about 100 GPa or more. The Young's modulus at 250 ° C. of the metal layer 18 is preferably about 25% or more and 100% or less with respect to the Young's modulus at 25 ° C. The Young's modulus of the metal layer 18 is measured according to JISZ2241. The linear expansion coefficient of the metal layer 18 is preferably about 10 ppm / ° C. or higher in a temperature range of 25 ° C. to 400 ° C. The linear expansion coefficient of the metal layer 18 is measured according to JISZ2285. The preferable Young's modulus and linear expansion coefficient of the metal layer 18 are preferably selected as appropriate depending on the area of the metal layer 18, the degree of warpage of the electronic device 16 and the substrate 11, and the like.

  As a material of the metal layer 18, for example, a stainless material (generally referred to as SUS) containing at least one element of Ni, Fe, and Cr is preferable, but Fe-based, Al-based, Mg-based, and Ti-based materials are preferable. Cu-based, Ni-based or other metals may be used. For example, the Young's modulus at 25 ° C. of stainless steel is about 200 GPa, and the Young's modulus at 250 ° C. is about 100 GPa to 200 GPa. In this case, the Young's modulus at 250 ° C. of stainless steel is about 50% to 100% with respect to the Young's modulus at 25 ° C.

  The metal layer 18 may be formed so as to cover a part of the second surface 16b of the electronic device 16, but is preferably formed so as to cover the entire surface of the second surface 16b of the electronic device 16. More preferably, the area of the metal layer 18 is larger than the area of the second surface 16b of the electronic device 16.

  The thickness of the metal layer 18 is preferably about 20 μm to 50 μm. If the thickness of the metal layer 18 is outside this range, the warp of the entire electronic device package 10 tends to increase. Further, if the adhesive layer 17 is thick, the entire electronic device package 10 becomes thick, which is not preferable.

  The shape of the metal layer 18 is preferably flat when considering the ease of lamination while making the stretching force uniform with respect to the second surface 16b of the electronic device 16. Further, the shape of the metal layer 18 is the same as that of the second surface 16b of the electronic device 16 (for example, a square shape) so that the stretching force of the metal layer 18 can be more efficiently transmitted to the second surface 16b of the electronic device 16. ). Thereby, the stretching force of the metal layer 18 can be transmitted concentrically to the electronic device 16.

  According to the electronic device package 10 of the present invention, the warp of the electronic device 16 and the substrate 11 that occurs when the electronic device 16 is mounted on the substrate 11 can be reduced by the adhesive layer 17 and the metal layer 18. In particular, in the present invention, since the Young's modulus at 250 ° C. of the adhesive layer 17 is about 1 MPa or more, the stretching force of the metal layer 18 can be transmitted to the electronic device 16 more efficiently.

  The electronic device (including the module) of the present invention includes the electronic device package of the present invention. According to the electronic apparatus of the present invention, the metal layer 18 expands together with the substrate 11 even in the heat treatment when the electronic device package 10 of the present invention is mounted on the circuit board. It can be mounted on a circuit board in a reduced state. Thereby, electrical conduction failure and mounting failure can be suppressed. In particular, in the present invention, since the Young's modulus at 250 ° C. of the adhesive layer 17 is about 1 MPa or more, the stretching force of the metal layer 18 can be transmitted to the electronic device 16 more efficiently.

  Next, the manufacturing method of the electronic device of this invention is demonstrated. First, a method for manufacturing an electronic device according to a second embodiment of the present invention will be described. In FIG. 3, the schematic process drawing of the manufacturing method which concerns on 2nd Embodiment is shown.

  First, the underfill resin 14 is applied to the place on the substrate 11 where the electronic device 16 is mounted. Next, the electronic device 16 is mounted on the substrate 11 so that the first conductive pad 12 on the substrate 11 and the second conductive pad 15 of the electronic device 16 are connected via the conductive member 13 (FIG. 3 ( a)). The underfill resin 14 may be injected between the electronic device 16 and the substrate 11 after the electronic device 16 is mounted on the substrate 11. As a method for mounting the electronic device, for example, the conductive member 13 is supplied in advance to the first conductive pad 12 of the substrate 11 or the second conductive pad 15 of the electronic device 16, and the second surface 16 b of the electronic device 16 is applied to the heater tool 21 or the like. In this method, the conductive member 13 is melted by pressurizing and heating, and the conductive member 13 is supplied to the first conductive pad 12 of the substrate 11 or the second conductive pad 15 of the electronic device 16 in advance, and the underfill resin 14 is cured and contracted. A method of connecting the second conductive pads 15 of the electronic device 16 and the first conductive pads 12 of the substrate 11 by force (generally referred to as a pressure welding method), the first conductive pads 12 of the substrate 11 or the second conductive pads of the electronic device 16 in advance. A method of supplying the conductive member 13 to the pad 15 and melting the conductive member 13 by a reflow method can be used.

  Next, the adhesive layer 17 and the metal layer 18 are laminated on the second surface 16b of the electronic device 16 and bonded. First, the adhesive layer 17 having a predetermined shape and size is temporarily fixed or mounted on the second surface of the electronic device 16 (FIG. 3B). Next, the metal layer 18 having a predetermined shape and size is adsorbed by the heater tool 21 (FIG. 3C). Next, the metal layer 18 adsorbed by the heater tool 21 is mounted on the adhesive layer 17 and heated / heated by the heater tool 21 under profile conditions (temperature, time, pressure, etc.) set according to the adhesive layer 17 and the metal layer 18. The metal layer 18 is bonded to the electronic device 16 by pressing (FIG. 3D). Thereafter, the heater tool 21 is separated from the metal layer 18 to manufacture the electronic device package 10 of the present invention (FIG. 3E).

  In the step of bonding the metal layer 18, the adhesive layer 17 and the metal layer 18 may be heated and pressurized for a predetermined time at a temperature lower than the maximum temperature before heating at the set maximum temperature (hereinafter referred to as “preheating step”). "). Generally, the adhesive layer 17 has a characteristic that it softens suddenly near the glass transition temperature of the adhesive layer 17. Therefore, by heating near the glass transition temperature of the adhesive layer 17 in the preheating step, the adhesive layer 17 is made more compatible with the metal layer 18 and the second surface 16b of the electronic device 16 than when there is no preheating step. be able to. Thereby, the thickness of the adhesive layer 17 can be made uniform, and as a result, variation in stress transmitted from the metal layer 18 to the electronic device 16 and the substrate 11 can be further reduced. In addition, this makes it possible to reduce the variation in warpage of each electronic device package 10. Furthermore, by providing a preheating step, the gas present at the interface between the adhesive layer 17 and the second surface 16b of the electronic device 16 and the interface between the adhesive layer 17 and the metal layer 18 in the adhesive layer 17 can easily escape to the outside. The effect is also obtained. As a result, it is possible to suppress the decrease in the adhesive strength between the adhesive layer 17, the metal layer 18, and the electronic device 16, and the generation of voids that can hinder the transmission of stress generated from the metal layer 18. Can be further enhanced.

  The shape and size of the heater tool 21 are not particularly limited, but are flat and easy to adsorb the metal layer 18 and uniformly heat and press the metal layer 18 and the adhesive layer 17. It is preferable that it is larger than the plane area of the layer 18.

  Next, an electronic device manufacturing method according to the third embodiment of the present invention will be described. In FIG. 4, the schematic process drawing of the manufacturing method which concerns on 3rd Embodiment is shown. In the manufacturing method according to the second embodiment, the adhesive layer 17 and the metal layer 18 are separately attached to the electronic device. However, in the manufacturing method according to this embodiment, the adhesive layer 17 and the metal layer 18 are integrated. Pasted on electronic devices.

  First, similarly to the manufacturing method according to the second embodiment, the electronic device 16 is mounted on the substrate 11 (FIG. 4A).

  A laminated body 19 is produced by laminating the metal layer 18 and the adhesive layer 17 (FIG. 4B) In this case, the metal layer 18 produced in a predetermined shape and size is prepared in a predetermined shape and size. The adhesive layer 17 may be attached, or after the adhesive layer 17 is attached to the metal layer 18, the laminate 19 of the metal layer 18 and the adhesive layer 17 may be formed in a predetermined shape and size. .

  Next, the laminate 19 of the metal layer 18 and the adhesive layer 17 is adsorbed by the heater tool 21 (FIG. 4C). Next, the laminate 19 adsorbed by the heater tool 21 is mounted on the second surface of the electronic device 16, and the heater tool 21 is subjected to profile conditions (temperature, time, pressure, etc.) set according to the adhesive layer 17 and the metal layer 18. The laminated body 19 is joined to the electronic device 16 by heating and pressurizing with (FIG. 4D). Thereafter, the heater tool 21 is separated from the metal layer 18 to manufacture the electronic device package 10 of the present invention (FIG. 4E).

  In the manufacturing process as described above, the metal layer 18 expands when being heated by the heater tool, and when the heater tool 21 is removed from the metal layer 18, the metal layer 18 contracts and returns to its original size. At the same time, the adhesive layer 17 is cured. Thus, in FIGS. 3A and 4A, even when the electronic device 16 is mounted on the substrate 11, even if the substrate 11 and the electronic device 16 are warped due to heat during mounting, the metal layer 18. Can be transmitted to the electronic device 16 through the adhesive layer 17, and warpage of the substrate 11 and the electronic device 16 can be reduced.

  For this reason, the warpage suppressing force by the metal layer 18 depends on the shrinkage amount of the metal layer 18. The amount of shrinkage of the metal layer 18 is determined by the difference ΔT between the maximum temperature applied to the metal layer 18 and the temperature after cooling in the step of attaching the metal layer 18. That is, in the manufacturing method according to the second embodiment, the maximum temperature when the metal layer is stuck on the adhesive layer 17, and in the manufacturing method according to the third embodiment, the laminate 19 of the metal layer 18 and the adhesive layer 17 is formed as an electron. The amount of shrinkage of the metal layer 18 is determined by the maximum temperature when the device 16 is attached. Therefore, the maximum temperature when heating the metal layer 18 is preferably determined in consideration of conditions such as the degree of warping of the electronic device 16 and the substrate 11, the Young's modulus of the adhesive layer 17, the size of the metal layer 18, and the like.

[Example 1-3]
Electronic device packages having different Young's moduli of the adhesive layer at 250 ° C. were prepared, and a test was performed on the warpage suppressing effect. In addition, it was set as the same form except the contact bonding layer. The results are shown in Table 1. The amount of warpage reduction shown in Table 1 is a comparison with the amount of warpage of an electronic device package that did not use the metal layer and the adhesive layer. When the Young's modulus at 250 ° C. of the adhesive layer was 1 MPa or more, a warp suppressing effect was obtained, but when the Young's modulus at 250 ° C. of the adhesive layer was less than 1 MPa, the warp suppressing effect was not observed. If the Young's modulus at 250 ° C. of the adhesive layer is less than 1 MPa, the adhesive layer is too soft to transmit the expansion / contraction force of the metal layer to the electronic device. From this, it was found that the Young's modulus at 250 ° C. of the adhesive layer is preferably 1 MPa or more.

  In addition, the magnitude | size of the curvature of an electronic device package was measured about the curvature in the diagonal of an electronic device package by the optical interference fringe measuring method (non-contact curvature measuring method) using the moire measuring method. The same applies to the following embodiments.

[Example 4]
Electronic device packages with different adhesive layer thicknesses were produced and tested for their warpage suppression effect. In addition, it was set as the same form except the contact bonding layer. As a result of testing for an electronic device having a thickness of 0.1 mm, the warpage amount before bonding of the metal layer was 200 μm to 250 μm. When the thickness of the adhesive layer was 10 μm to 50 μm, the warp of the electronic device package was It became 100 μm or less. On the other hand, when the thickness of the adhesive layer is less than 10 μm and when it exceeds 50 μm, the warpage of the electronic device package exceeds 100 μm, or the metal layer is partly peeled from the electronic device. Generally, in an electronic device package that is downsized and thinned, if the amount of warpage exceeds 100 μm, electrical continuity tends to be poor. Therefore, it was found that the thickness of the adhesive layer is preferably 10 μm to 50 μm.

[Example 5]
Electronic device packages were prepared using adhesive layers having different glass transition temperatures, and the warpage suppression effect was tested. In addition, it was set as the same form except the contact bonding layer. As a result, it was found that when an adhesive layer having a glass transition temperature of 100 ° C. or higher is used, the warp of the electronic device package can be more effectively suppressed than when an adhesive layer having a glass transition temperature of less than 100 ° C. is used. From this, it was found that the glass transition temperature of the adhesive layer is preferably 100 ° C. or higher from the viewpoint of suppressing warpage.

[Example 6]
A test was conducted on the influence of the heating temperature (maximum temperature) on the warp suppressing effect when the metal layer was applied. In addition, it was set as the same form except heating temperature. When a metal layer with a maximum temperature of 100 ° C. to 400 ° C. was attached to an electronic device with a thickness of 0.1 mm mounted on a substrate, the amount of warpage was 200 μm to 250 μm before the metal layer was attached, After the metal layer was pasted, the warp amount of the electronic device package could be 100 μm or less. As described in the first embodiment, when the amount of warpage is 100 μm or less, poor electrical conduction can be suppressed even in a small and thin electronic device package. On the other hand, in the metal layer added with the maximum temperature of less than 100 ° C., the warp amount of the electronic device package was larger than 100 μm. Further, when a temperature higher than the maximum temperature of 400 ° C. was applied, a problem occurred in the electronic device itself. From this, it was found that 100 ° C. to 400 ° C. is suitable for the heating temperature when the metal layer is provided in the electronic device.

[Example 7]
Electronic device packages were prepared using metal layers having different Young's modulus ratios at 250 ° C. to Young's modulus at 25 ° C., and tests were conducted on the warpage suppressing effect. The metal layers used are stainless steel and copper. In addition, it was set as the same form except the metal layer. When stainless steel was used, the warp could be reduced by 100 μm as compared to an electronic device package that did not use a metal layer and an adhesive layer. On the other hand, when copper was used, the warp could be reduced by 50 μm. The Young's modulus at 25 ° C. of copper is about 120 GPa, and the Young's modulus at 250 ° C. is about 30 GPa to 50 GPa. Both stainless steel and copper have a Young's modulus at 25 ° C. of 100 GPa or more and a linear expansion coefficient of 10 ppm / ° C. or more. The ratio of Young's modulus at 250 ° C. to Young's modulus at 25 ° C. is about 0.5 for stainless steel. ˜1, copper is about 0.25˜0.42. From this, the decrease in Young's modulus from 25 ° C to 250 ° C is smaller in stainless steel, so the electronic device package using stainless steel reduces the amount of warpage than the electronic device package using copper. I was able to. Accordingly, it was found that the higher the Young's modulus at 250 ° C. with respect to the Young's modulus at 25 ° C. of the metal layer, the higher the warp reduction effect.

[Example 8]
Electronic device packages with different metal layer thicknesses were produced and tested for their warpage suppression effect. In addition, it was set as the same form except the metal layer. As a result of testing an electronic device having a thickness of 0.1 mm, the amount of warpage was 200 μm to 250 μm before the metal layer was attached. When the thickness of the metal layer was 20 μm to 50 μm, the warp of the electronic device package was It became 100 μm or less. On the other hand, when the thickness of the metal layer is less than 20 μm and when it exceeds 50 μm, the warpage of the electronic device package exceeds 100 μm. As described in the first embodiment, when the amount of warpage is 100 μm or less, poor electrical conduction can be suppressed even in a small and thin electronic device package. From this, it was found that the thickness of the metal layer is preferably 10 μm to 50 μm.

  The electronic device package, the manufacturing method thereof, and the electronic apparatus of the present invention have been described based on the above embodiment, but are not limited to the above embodiment, and are within the scope of the present invention. It goes without saying that various modifications, changes and improvements can be included in the above embodiment based on the technical idea. Further, various combinations, substitutions, or selections of various disclosed elements are possible within the scope of the claims of the present invention.

  Further problems, objects, and developments of the present invention will become apparent from the entire disclosure of the present invention including the claims.

  The electronic device package of the present invention can be applied to, for example, a semiconductor package in which the electronic device is a semiconductor chip. The electronic device is not limited to an active element, and may be a passive element.

DESCRIPTION OF SYMBOLS 10 Electronic device package 11 Board | substrate 12 1st conductive pad 13 Conductive member 14 Underfill resin 15 2nd conductive pad 16 Electronic device 16a 1st surface 16b 2nd surface 17 Adhesive layer 18 Metal layer 19 Laminated body 21 Heater tool

Claims (9)

A substrate,
An electronic device mounted on the substrate such that the first surface faces the substrate;
An adhesive layer formed on the second surface of the electronic device on the back side of the first surface;
The maximum temperature of the heat treatment is set to 100 ° C. to 400 ° C., and a metal layer attached to the electronic device through the adhesive layer,
The Young's modulus at 250 ° C. of the adhesive layer is 1 MPa or more,
The metal layer has a thickness of 20 μm or more and 50 μm or less,
The Young's modulus at 25 ° C. of the metal layer is 100 GPa or more,
The linear expansion coefficient at 25 ° C. to 400 ° C. of the metal layer is 10 ppm / ° C. or more,
An electronic device package, wherein the Young's modulus at 250 ° C of the metal layer is 25% or more and 100% or less with respect to the Young's modulus at 25 ° C of the metal layer.   The electronic device package according to claim 1, wherein the adhesive layer is formed on the entire surface of the second surface.   The electronic device package according to claim 1, wherein the metal layer is formed so as to cover the entire surface of the second surface.   The electronic device package according to claim 1, wherein the adhesive layer does not contain a filler.   The electronic device package according to any one of claims 1 to 4, wherein the adhesive layer contains a polyimide resin and an epoxy resin.   The electronic device package according to claim 1, wherein a thickness of the adhesive layer is 10 μm or more and 50 μm or less.   The electronic device package according to claim 1, wherein a glass transition temperature of the adhesive layer is 100 ° C. or more and 400 ° C. or less. Electronic apparatus, characterized in that the electronic device package according is mounted to one of claims 1 to 7. Mounting the electronic device on the substrate such that the first surface of the electronic device faces the substrate;
A step of attaching a metal layer to the second surface of the electronic device on the back side of the first surface through an adhesive layer, with the maximum temperature of the heat treatment being 100 ° C to 400 ° C ,
Heating the metal layer and the adhesive layer for a predetermined time at a temperature lower than the maximum temperature before the heat treatment at the maximum temperature, and
Young's modulus at 250 ° C. of the adhesive layer state, and are more 1 MPa,
The metal layer has a thickness of 20 μm or more and 50 μm or less,
The Young's modulus at 25 ° C. of the metal layer is 100 GPa or more,
The linear expansion coefficient at 25 ° C. to 400 ° C. of the metal layer is 10 ppm / ° C. or more,
The Young's modulus at 250 ° C. of the metal layer, a method of manufacturing an electronic device package, characterized in der Rukoto 100% or less 25% or more with respect to the Young's modulus at 25 ° C. of the metal layer.

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