JP5474188B2 - 回路基板およびこれを用いた電子装置 - Google Patents
回路基板およびこれを用いた電子装置 Download PDFInfo
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- JP5474188B2 JP5474188B2 JP2012517337A JP2012517337A JP5474188B2 JP 5474188 B2 JP5474188 B2 JP 5474188B2 JP 2012517337 A JP2012517337 A JP 2012517337A JP 2012517337 A JP2012517337 A JP 2012517337A JP 5474188 B2 JP5474188 B2 JP 5474188B2
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- Prior art keywords
- crystal grain
- circuit board
- average crystal
- support substrate
- grain size
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 104
- 229910052802 copper Inorganic materials 0.000 claims description 104
- 239000010949 copper Substances 0.000 claims description 104
- 239000000758 substrate Substances 0.000 claims description 73
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 230000017525 heat dissipation Effects 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 description 91
- 238000000034 method Methods 0.000 description 28
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- 229910052718 tin Inorganic materials 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- 229910052735 hafnium Inorganic materials 0.000 description 2
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- 229910052761 rare earth metal Inorganic materials 0.000 description 2
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
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- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Structure Of Printed Boards (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
の領域とを備えることを特徴とするものである。
た第2の領域とを備えることにより、回路部材上に搭載される電子部品が動作時に生じる熱の影響を受けやすい搭載面側に、平均結晶粒径の小さい、すなわち剛性の高い第2の領域が位置していることから、この熱によって回路部材に生じる反りを小さくすることができる。また、第1の領域は、第2の領域と比べて平均結晶粒径が大きく、熱伝導性に優れているので、第2の領域から伝わった熱を効率よく放熱することができる。
2,2a,2b:回路部材
3a,3b,3c:接合層
4a:第1の銅材
4b:第2の銅材
5:放熱部材
10:回路基板
Claims (4)
- 支持基板の一方主面に、銅を主成分とする回路部材が設けられ、該回路部材の上面が電子部品の搭載面となる回路基板であって、前記回路部材は、平均結晶粒径が0.1mmを超えて0.5mm以下である第1の平均結晶粒径を有した第1の領域と、該第1の領域よりも前記搭載面側に位置して、前記第1の平均結晶粒径よりも小さい平均結晶粒径が0.1mm以下(但し、0μmを除く)である第2の平均結晶粒径を有した第2の領域とを備えることを特徴とする回路基板。
- 前記支持基板の他方主面に放熱部材が設けられていることを特徴とする請求項1に記載の回路基板。
- 前記支持基板がセラミック焼結体からなるとともに、該セラミック焼結体は、主成分が酸化アルミニウム、窒化珪素および窒化アルミニウムのいずれかであることを特徴とする請求項1または請求項2に記載の回路基板。
- 請求項1乃至請求項3のいずれかに記載の回路基板における前記回路部材上に電子部品を搭載してなることを特徴とする電子装置。
Priority Applications (1)
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JP2012517337A JP5474188B2 (ja) | 2010-05-27 | 2011-05-27 | 回路基板およびこれを用いた電子装置 |
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JP2010121710 | 2010-05-27 | ||
JP2010121710 | 2010-05-27 | ||
PCT/JP2011/062243 WO2011149065A1 (ja) | 2010-05-27 | 2011-05-27 | 回路基板およびこれを用いた電子装置 |
JP2012517337A JP5474188B2 (ja) | 2010-05-27 | 2011-05-27 | 回路基板およびこれを用いた電子装置 |
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JPWO2011149065A1 JPWO2011149065A1 (ja) | 2013-07-25 |
JP5474188B2 true JP5474188B2 (ja) | 2014-04-16 |
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EP (1) | EP2579696B1 (ja) |
JP (1) | JP5474188B2 (ja) |
WO (1) | WO2011149065A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103887396A (zh) * | 2012-12-21 | 2014-06-25 | 比亚迪股份有限公司 | 一种led芯片直接焊接到铜热沉表面的发光组件及其制备方法 |
JP6678374B2 (ja) * | 2013-10-09 | 2020-04-08 | 古河電気工業株式会社 | 接合構造および電子部材接合構造体 |
EP3236495B1 (en) * | 2014-12-16 | 2019-09-11 | Kyocera Corporation | Circuit substrate and electronic device |
JP6462958B2 (ja) | 2016-06-16 | 2019-01-30 | 三菱電機株式会社 | 半導体実装用放熱ベース板およびその製造方法 |
EP3606299B1 (en) * | 2017-03-30 | 2022-08-31 | Kabushiki Kaisha Toshiba | Ceramic-copper circuit substrate and semiconductor device using same |
JP6744488B2 (ja) * | 2017-05-26 | 2020-08-19 | 京セラ株式会社 | パワーモジュール用基板およびパワーモジュール |
JP7008236B2 (ja) * | 2017-12-19 | 2022-01-25 | 三菱マテリアル株式会社 | パワーモジュール用基板及びその製造方法 |
JP7008239B2 (ja) * | 2018-02-27 | 2022-01-25 | 三菱マテリアル株式会社 | 絶縁回路基板及びその製造方法 |
WO2020105734A1 (ja) * | 2018-11-22 | 2020-05-28 | デンカ株式会社 | セラミックス-銅複合体、セラミックス-銅複合体の製造方法、セラミックス回路基板およびパワーモジュール |
CN113678244A (zh) * | 2019-03-29 | 2021-11-19 | 电化株式会社 | 氮化硅电路基板及电子部件模块 |
CN113597674A (zh) * | 2019-04-11 | 2021-11-02 | 株式会社东芝 | 陶瓷铜电路基板及使用了其的半导体装置 |
JP7470181B2 (ja) * | 2020-03-18 | 2024-04-17 | 株式会社東芝 | 接合体、セラミックス銅回路基板、接合体の製造方法、およびセラミックス銅回路基板の製造方法 |
JP7119268B2 (ja) * | 2020-05-27 | 2022-08-17 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、および、絶縁回路基板 |
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JPH08139420A (ja) * | 1994-11-02 | 1996-05-31 | Denki Kagaku Kogyo Kk | 回路基板 |
JPH09162325A (ja) * | 1995-12-07 | 1997-06-20 | Denki Kagaku Kogyo Kk | 窒化珪素回路基板及びその製造方法 |
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JP2006108464A (ja) * | 2004-10-07 | 2006-04-20 | Kyoden:Kk | 鉛フリーはんだに対応した銅配線基板 |
JP5144657B2 (ja) * | 2007-05-30 | 2013-02-13 | 京セラ株式会社 | 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置 |
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2011
- 2011-05-27 EP EP11786762.2A patent/EP2579696B1/en active Active
- 2011-05-27 WO PCT/JP2011/062243 patent/WO2011149065A1/ja active Application Filing
- 2011-05-27 JP JP2012517337A patent/JP5474188B2/ja not_active Expired - Fee Related
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JPH08139420A (ja) * | 1994-11-02 | 1996-05-31 | Denki Kagaku Kogyo Kk | 回路基板 |
JPH09162325A (ja) * | 1995-12-07 | 1997-06-20 | Denki Kagaku Kogyo Kk | 窒化珪素回路基板及びその製造方法 |
JPH11121889A (ja) * | 1997-10-16 | 1999-04-30 | Denki Kagaku Kogyo Kk | 回路基板 |
JP2000340912A (ja) * | 1999-05-27 | 2000-12-08 | Kyocera Corp | セラミック回路基板 |
JP2006066650A (ja) * | 2004-08-26 | 2006-03-09 | Kyocera Corp | 金属−単結晶複合体とその接合方法およびこれを用いた放熱基板 |
JP2006128286A (ja) * | 2004-10-27 | 2006-05-18 | Kyocera Corp | 金属セラミック複合体とその接合方法およびこれを用いた放熱基板 |
JP2006237383A (ja) * | 2005-02-25 | 2006-09-07 | Hitachi Metals Ltd | セラミックス回路基板および半導体モジュール |
JP2006282417A (ja) * | 2005-03-31 | 2006-10-19 | Dowa Mining Co Ltd | 金属−セラミックス接合基板 |
JP2007066995A (ja) * | 2005-08-29 | 2007-03-15 | Hitachi Metals Ltd | セラミックス配線基板、その製造方法及び半導体モジュール |
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EP2579696A4 (en) | 2017-11-08 |
EP2579696B1 (en) | 2018-12-05 |
EP2579696A1 (en) | 2013-04-10 |
JPWO2011149065A1 (ja) | 2013-07-25 |
WO2011149065A1 (ja) | 2011-12-01 |
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