JP5366038B2 - 熱流センサ用薄膜サーミスタを用いた熱流センサ - Google Patents
熱流センサ用薄膜サーミスタを用いた熱流センサ Download PDFInfo
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- JP5366038B2 JP5366038B2 JP2007336425A JP2007336425A JP5366038B2 JP 5366038 B2 JP5366038 B2 JP 5366038B2 JP 2007336425 A JP2007336425 A JP 2007336425A JP 2007336425 A JP2007336425 A JP 2007336425A JP 5366038 B2 JP5366038 B2 JP 5366038B2
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- Prior art keywords
- flow sensor
- heat flow
- heat
- thin film
- thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 42
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 25
- 230000006698 induction Effects 0.000 abstract description 25
- 238000010411 cooking Methods 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 12
- 239000000523 sample Substances 0.000 description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 235000013305 food Nutrition 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Measuring Temperature Or Quantity Of Heat (AREA)
Description
図1は本発明に係わる熱流センサの鳥瞰図で、図2は図1のX,Yで切り取られる熱流センサSの内部を説明する断面図である。
2 サーミスタ薄膜
3 極細配線パターン
4 電極パッド
5 保護膜
6 受熱板
7 弾性体
8 熱絶縁板
9 筐体
10 引出線
15 細長基板
21 熱流センサ用薄膜サーミスタ
Claims (6)
- 細長基板と、該細長基板上に形成された2つのサーミスタ薄膜と、該2つのサーミスタ薄膜のそれぞれを外部へ電気的に導出させる前記細長基板上に形成された極細配線パターンとから構成された熱流センサ用薄膜サーミスタを用いて構成される熱流センサであって、前記2つサーミスタ薄膜の内、ひとつのサーミスタ薄膜が、前記細長基板のひとつの短辺に近接して配置されている熱流センサ用薄膜サーミスタを用いて構成される熱流センサであって、
被検知体表面に接触させて被検知体表面の熱を吸収する受熱板と、被検知体表面と接触する前記受熱板の面の反対面に前記細長基板の前記ひとつの短辺側の側面部分が前記受熱板と接触して配置された前記熱流センサ用薄膜サーミスタと、前記受熱板と対向し前記細長基板のもうひとつの短辺側の側面部分に配置された弾性体と、前記熱流センサ用薄膜サーミスタと前記弾性体とを内包し、前記受熱板を保持する筐体と、から構成されたことを特徴とする熱流センサ。 - 前記熱流センサ用薄膜サーミスタと前記弾性体の間に、熱絶縁板を設けることを特徴とする請求項1に記載の熱流センサ。
- 前記受熱板に前記熱流センサ用薄膜サーミスタの細長基板の短辺の側面部分を嵌合する凹陥部を設けることを特徴とする請求項1に記載の熱流センサ。
- 前記熱絶縁板に、前記熱流センサ用薄膜サーミスタの細長基板の短辺の側面部分を嵌合する凹嵌部を設けることを特徴とする請求項2に記載の熱流センサ
- 前記筐体が、めっきによって表面が覆われていることを特徴とする請求項1に記載の熱流センサ。
- 前記細長基板が、アルミナ、ジルコニア、サファイア、或いはシリコンの何れか一つからなることを特徴とする請求項1記載の熱流センサ。
Priority Applications (1)
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---|---|---|---|
JP2007336425A JP5366038B2 (ja) | 2007-12-27 | 2007-12-27 | 熱流センサ用薄膜サーミスタを用いた熱流センサ |
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JP2007336425A JP5366038B2 (ja) | 2007-12-27 | 2007-12-27 | 熱流センサ用薄膜サーミスタを用いた熱流センサ |
Publications (2)
Publication Number | Publication Date |
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JP2009156753A JP2009156753A (ja) | 2009-07-16 |
JP5366038B2 true JP5366038B2 (ja) | 2013-12-11 |
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JP2007336425A Expired - Fee Related JP5366038B2 (ja) | 2007-12-27 | 2007-12-27 | 熱流センサ用薄膜サーミスタを用いた熱流センサ |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5716488B2 (ja) * | 2011-03-29 | 2015-05-13 | 株式会社村田製作所 | 体温計および体温測定システム |
JP5959111B2 (ja) * | 2013-03-21 | 2016-08-02 | Semitec株式会社 | 熱流センサ |
CN103308205B (zh) * | 2013-06-26 | 2015-11-04 | 中国科学院力学研究所 | 一种电阻测温量热计的测量方法 |
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JPH05103Y2 (ja) * | 1985-09-30 | 1993-01-05 | ||
US7938783B2 (en) * | 2003-08-19 | 2011-05-10 | Advanced Monitors Corporation | Medical body core thermometer |
JP2006258520A (ja) * | 2005-03-16 | 2006-09-28 | Ishizuka Electronics Corp | 電子体温計用プローブ |
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