JP5351100B2 - 太陽電池用導電性ペースト組成物 - Google Patents
太陽電池用導電性ペースト組成物 Download PDFInfo
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- JP5351100B2 JP5351100B2 JP2010152205A JP2010152205A JP5351100B2 JP 5351100 B2 JP5351100 B2 JP 5351100B2 JP 2010152205 A JP2010152205 A JP 2010152205A JP 2010152205 A JP2010152205 A JP 2010152205A JP 5351100 B2 JP5351100 B2 JP 5351100B2
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- 239000000203 mixture Substances 0.000 title claims description 38
- 239000011521 glass Substances 0.000 claims description 82
- 239000000843 powder Substances 0.000 claims description 35
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 28
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 28
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 36
- 239000010408 film Substances 0.000 description 36
- 239000002245 particle Substances 0.000 description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 25
- 238000000034 method Methods 0.000 description 23
- 239000011787 zinc oxide Substances 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 239000002003 electrode paste Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 239000005355 lead glass Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229940019931 silver phosphate Drugs 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- -1 that is Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Sustainable Development (AREA)
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- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Description
PbO-B2O3-SiO2- Li2O- P2O5-Sb2O5の6成分系、
PbO-B2O3-SiO2- Li2O- Sb2O5の5成分系、
PbO-B2O3-SiO2- Li2O- P2O5 の5成分系、
PbO-B2O3-SiO2-Al2O3-Li2O-TiO2-ZnO-P2O5-Sb2O5の9成分系、
PbO-B2O3-SiO2-Al2O3-Li2O-TiO2- P2O5-Sb2O5の8成分系、
PbO-B2O3-SiO2- Li2O-TiO2-ZnO-P2O5-Sb2O5の8成分系、
PbO-B2O3-SiO2- Li2O- ZnO-P2O5-Sb2O5の7成分系、
PbO-B2O3-SiO2-Al2O3-Li2O-TiO2-ZnO-P2O5 の8成分系、
PbO-B2O3-SiO2-Al2O3-Li2O-TiO2-ZnO- Sb2O5の8成分系、
PbO-B2O3-SiO2- Li2O-TiO2-ZnO- Sb2O5の7成分系が示されている。
Claims (3)
- 導電性粉末と、ガラスフリットと、ベヒクルとを含み、受光面側のn層がシャローエミッタ構造を成している太陽電池の受光面に用いられる太陽電池用導電性ペースト組成物であって、
前記ガラスフリットを前記導電性粉末100重量部に対して1〜10重量部の範囲で含み、
前記ガラスフリットが酸化物換算で0.6〜18.0(mol%)のLi2Oと、0.1〜6.0(mol%)のP2O5および0.1〜4.0(mol%)のSb2O5の少なくとも一方と、20〜62(mol%)のPbOと、3(但し、3.0mol%を除く)〜18(mol%)のB2O3と、18〜65(mol%)のSiO2と、0〜6(mol%)のAl2O3と、0〜6(mol%)のTiO2と、0〜30(mol%)のZnOとを含み、且つPb/Si(mol比)が0.5〜1.7の範囲内にあるガラスから成ることを特徴とする太陽電池用導電性ペースト組成物。 - 前記ガラスは3.0〜12.0(mol%)のLi2Oと、0.1〜4.0(mol%)のP2O5および0.1〜2.0(mol%)のSb2O5の少なくとも一方と、30〜50(mol%)のPbOと、3(但し、3.0mol%を除く)〜13(mol%)のB2O3と、20〜45(mol%)のSiO2と、0〜6(mol%)のAl2O3と、0〜6(mol%)のTiO2と、0〜30(mol%)のZnOとを含み、且つPb/Si(mol比)が0.5〜1.7の範囲内にあるものである請求項1の太陽電池用導電性ペースト組成物。
- 前記ガラスは6.0〜12.0(mol%)のLi2Oと、0.5〜2.0(mol%)のP2O5および0.2〜1.5(mol%)のSb2O5の少なくとも一方と、30〜50(mol%)のPbOと、3(但し、3.0mol%を除く)〜9(mol%)のB2O3と、25〜40(mol%)のSiO2と、0〜6(mol%)のAl2O3と、0〜6(mol%)のTiO2と、0〜30(mol%)のZnOとを含み、且つPb/Si(mol比)が0.5〜1.7の範囲内にあるものである請求項1の太陽電池用導電性ペースト組成物。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010152205A JP5351100B2 (ja) | 2010-07-02 | 2010-07-02 | 太陽電池用導電性ペースト組成物 |
TW100120690A TWI494285B (zh) | 2010-07-02 | 2011-06-14 | Conductive paste composition for solar cells |
US13/806,239 US8889040B2 (en) | 2010-07-02 | 2011-06-17 | Conductive paste composition for solar cell |
KR1020137002830A KR20130129900A (ko) | 2010-07-02 | 2011-06-17 | 태양 전지용 도전성 페이스트 조성물 |
PCT/JP2011/063969 WO2012002182A1 (ja) | 2010-07-02 | 2011-06-17 | 太陽電池用導電性ペースト組成物 |
DE112011102261T DE112011102261T5 (de) | 2010-07-02 | 2011-06-17 | Leitfähige Pastenzusammensetzung für eine Solarzelle |
CN201180032356.8A CN102959721B (zh) | 2010-07-02 | 2011-06-17 | 太阳能电池用导电性糊组合物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010152205A JP5351100B2 (ja) | 2010-07-02 | 2010-07-02 | 太陽電池用導電性ペースト組成物 |
Publications (2)
Publication Number | Publication Date |
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JP2012015409A JP2012015409A (ja) | 2012-01-19 |
JP5351100B2 true JP5351100B2 (ja) | 2013-11-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010152205A Expired - Fee Related JP5351100B2 (ja) | 2010-07-02 | 2010-07-02 | 太陽電池用導電性ペースト組成物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8889040B2 (ja) |
JP (1) | JP5351100B2 (ja) |
KR (1) | KR20130129900A (ja) |
CN (1) | CN102959721B (ja) |
DE (1) | DE112011102261T5 (ja) |
TW (1) | TWI494285B (ja) |
WO (1) | WO2012002182A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5137923B2 (ja) | 2009-09-18 | 2013-02-06 | 株式会社ノリタケカンパニーリミテド | 太陽電池用電極ペースト組成物 |
WO2013018408A1 (ja) * | 2011-07-29 | 2013-02-07 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
JP5937904B2 (ja) * | 2012-06-26 | 2016-06-22 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペースト組成物 |
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US20130099181A1 (en) | 2013-04-25 |
TW201204669A (en) | 2012-02-01 |
CN102959721A (zh) | 2013-03-06 |
WO2012002182A1 (ja) | 2012-01-05 |
JP2012015409A (ja) | 2012-01-19 |
DE112011102261T5 (de) | 2013-05-29 |
TWI494285B (zh) | 2015-08-01 |
KR20130129900A (ko) | 2013-11-29 |
CN102959721B (zh) | 2015-09-30 |
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