JP5214652B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5214652B2 JP5214652B2 JP2010053690A JP2010053690A JP5214652B2 JP 5214652 B2 JP5214652 B2 JP 5214652B2 JP 2010053690 A JP2010053690 A JP 2010053690A JP 2010053690 A JP2010053690 A JP 2010053690A JP 5214652 B2 JP5214652 B2 JP 5214652B2
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 239000003990 capacitor Substances 0.000 claims description 40
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- -1 BaTiO 3 Inorganic materials 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
そのため本発明の目的は、半導体装置単体で負電源を必要とせずにスイッチングが可能な素子を提供することである。
すなわち、本発明によれば、ノーマリオン型FETを含む半導体装置単独で単電源によるスイッチング動作が可能となり、加えて部品点数が削減されることによる回路基板上のコンパクト化と配線長が大幅に小さくなることによるリンギング抑制が可能となる。
第一の実施形態に係る半導体装置の構成を図1から図4に基づいて説明する。図1(a)は本発明によって提供される半導体装置の鳥瞰図であり、図1(b)は図1(a)にある直線AA’で切った断面図である。
で表される電圧が発生し、配線の浮遊容量との共振により電圧振動(リンギング)が生じてスイッチング素子や素子の駆動回路に悪影響を及ぼす上、ノイズの要因ともなる。急激な電流変化により発生する電圧は配線の寄生インダクタンスLに比例するため、本発明による配線長の大幅な短縮は、大幅に起電力を抑制するのに有効である。
第2の実施形態に係る半導体装置は第1の実施形態に係る半導体装置と比較して、ゲート絶縁膜26が無い点が異なる点である。図5のような窒化物半導体断面図において、ゲート絶縁膜が省略されている。この場合、ゲート電極21を窒化物半導体にショットキー接続させることにより、第1の実施例と同様に半導体装置単体で半導体装置のみで単電源によるスイッチング動作が可能となる。これにより、回路基板上の部品点数が削減されることにより、回路のコンパクト化が実現できる。
第3の実施形態に係る半導体装置は、図6に示すように、第1から第3の実施形態に係る半導体装置と比べてゲート電極引き出しパッド6部の下のアノード電極18が一体に形成されている点が異なる点である。これにより、電極部を大きくとることができ、ダイオードのオン抵抗を低減することができる。また、カソード電極を広く取ることでもオン抵抗を低減できる。
2・・・ドレイン電極
3・・・ゲート電極
4・・・ソース電極
5・・・ソース電極パッド
6・・・ゲート引き出し電極
7・・・ボンディング用電極パッド
10・・・誘電体絶縁膜
12・・・キャパシタ
13・・・層間絶縁膜
14・・・素子分離
15・・・カソード電極
17・・・窒化物半導体へテロ構造と2次元電子ガス
18・・・アノード電極
19・・・ダイオード
20・・・ソース電極
21・・・ゲート電極
22・・・ドレイン電極
23・・・AlGaN層
24・・・2次元電子ガス
25・・・GaN層
26・・・絶縁膜
27・・・FET部分
28・・・駆動信号立ち下りタイミング
29・・・駆動信号立ち上がりタイミング
30・・・駆動信号のハイレベル電圧
31・・・FETゲートのハイレベル電圧
32・・・FETゲートのローレベル電圧
33・・・駆動信号立ち下りタイミング
35・・・駆動信号立ち上がりタイミング
36・・・駆動信号のハイレベル電圧
37・・・FETゲートのハイレベル電圧
38・・・FETゲートのローレベル電圧
39・・・キャパシタ電極
40・・・誘電体絶縁膜
Claims (3)
- ノーマリオンFETと、一方の電極を前記FETのゲートに、他方の電極を入力端子に電気的に接続されたキャパシタと、アノード電極が前記FETのゲートに、カソード電極が前記FETのソースに電気的に接続されたダイオードとを備えており、前記キャパシタは、前記FETのゲート電極から引き出され、前記FETの領域外に配置されたゲート引き出し電極上に誘電体絶縁膜を介して金属膜を形成することにより構成されたものであり、前記FET、前記キャパシタ、及び前記ダイオードが同一チップ上に形成されているものであって、前記ゲートに接続する前記キャパシタの容量を、前記FETの入力容量の1倍から9倍とすることを特徴とする半導体装置。
- 前記ノーマリオンFETは、窒化物半導体あるいはSiCにより形成されたものであることを特徴とする請求項1に記載の半導体装置。
- 前記ノーマリオンFETは、ゲート電極を、窒化物半導体あるいはSiCにショットキー接続させたものであることを特徴とする請求項1に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010053690A JP5214652B2 (ja) | 2010-03-10 | 2010-03-10 | 半導体装置 |
US12/876,598 US8368084B2 (en) | 2010-03-10 | 2010-09-07 | Semiconductor device with capacitor disposed on gate electrode |
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JP2010053690A JP5214652B2 (ja) | 2010-03-10 | 2010-03-10 | 半導体装置 |
Related Child Applications (1)
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JP2012183295A Division JP2012256930A (ja) | 2012-08-22 | 2012-08-22 | 半導体装置 |
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JP2011187840A JP2011187840A (ja) | 2011-09-22 |
JP5214652B2 true JP5214652B2 (ja) | 2013-06-19 |
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US (1) | US8368084B2 (ja) |
JP (1) | JP5214652B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5197658B2 (ja) * | 2010-03-10 | 2013-05-15 | 株式会社東芝 | 駆動回路 |
JP2013058640A (ja) | 2011-09-08 | 2013-03-28 | Toshiba Corp | 半導体装置 |
US8575657B2 (en) | 2012-03-20 | 2013-11-05 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for GaN HEMT devices |
US9123735B2 (en) | 2013-07-31 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device with combined passive device on chip back side |
JP6347685B2 (ja) * | 2014-07-08 | 2018-06-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN104167450B (zh) * | 2014-08-17 | 2017-01-11 | 复旦大学 | 一种半浮栅功率器件 |
US9799645B2 (en) * | 2015-11-20 | 2017-10-24 | Raytheon Company | Field effect transistor (FET) structure with integrated gate connected diodes |
US20180061975A1 (en) | 2016-08-24 | 2018-03-01 | Rohm Co., Ltd. | Nitride semiconductor device and nitride semiconductor package |
JP7308593B2 (ja) * | 2017-03-23 | 2023-07-14 | ローム株式会社 | 窒化物半導体装置 |
JP7097708B2 (ja) * | 2018-01-30 | 2022-07-08 | ローム株式会社 | 窒化物半導体装置 |
EP4333304A3 (en) * | 2019-10-31 | 2024-06-05 | Infineon Technologies Austria AG | Semiconductor device and inverter |
WO2022058269A1 (en) * | 2020-09-18 | 2022-03-24 | Iii-V Technologies Gmbh | Normally-off mesfet device with stacked gate contact |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394590A (en) * | 1979-12-28 | 1983-07-19 | International Rectifier Corp. Japan Ltd. | Field effect transistor circuit arrangement |
JPS60223167A (ja) * | 1984-04-20 | 1985-11-07 | Hitachi Ltd | 半導体装置 |
JP3369827B2 (ja) * | 1995-01-30 | 2003-01-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH11136111A (ja) * | 1997-10-30 | 1999-05-21 | Sony Corp | 高周波回路 |
JP2003243944A (ja) * | 2002-02-15 | 2003-08-29 | Sanyo Electric Co Ltd | 高入力インピーダンス増幅器及びエレクトレットコンデンサマイクロフォン用の半導体集積回路。 |
JP2006332136A (ja) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
JP2007027317A (ja) * | 2005-07-14 | 2007-02-01 | Mitsubishi Electric Corp | 半導体装置 |
JP2008235952A (ja) | 2007-03-16 | 2008-10-02 | Furukawa Electric Co Ltd:The | デプレッション型スイッチング素子の駆動回路 |
JP5130906B2 (ja) * | 2007-12-26 | 2013-01-30 | サンケン電気株式会社 | スイッチ装置 |
JP2009218528A (ja) * | 2008-03-13 | 2009-09-24 | Furukawa Electric Co Ltd:The | GaN系電界効果トランジスタ |
-
2010
- 2010-03-10 JP JP2010053690A patent/JP5214652B2/ja active Active
- 2010-09-07 US US12/876,598 patent/US8368084B2/en active Active
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JP2011187840A (ja) | 2011-09-22 |
US20110220978A1 (en) | 2011-09-15 |
US8368084B2 (en) | 2013-02-05 |
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