JP5281831B2 - Method for forming conductive material structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a conductive material structure suitable for three-dimensional mounting by a through electrode in a shorter time by improving plating requiring a longer time that causes hindrance to practical use. <P>SOLUTION: A conductive film 14 is formed over the entire surface of a substrate W, having a recessed portion 12 for the through electrode, and including a surface of the recessed portion 12 on the surface thereof; a resist pattern 30 is formed at a predetermined position on the surface of the substrate W; and a first plating film 36 is embedded in the recessed portion 12 for the through electrode by carrying out first electrolytic plating under a first plating condition where the conductive film 14 is used as an electric supply layer. After the first plating film 36 is completely embedded in the recessed portion 12 for the through electrode, a second plating film 38 is grown on the conductive film 14 exposed in a resist opening portion 32 of the resist pattern 30 and on the first plating film 36 by carrying out second electrolytic plating under a second plating condition where the conductive film 14 and first plating film 36 are used as an electric supply layer. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a method for forming a conductive material structure. More specifically, the present invention has a through electrode vertically penetrating inside, and an electrode pad and / or a redistribution structure continuous with the through electrode on the surface. The present invention relates to a method for forming a conductive material structure that forms a conductive material structure used to realize three-dimensional stacking of a semiconductor chip or the like via a through electrode.

  In order to achieve further downsizing and higher performance of electronic products, three-dimensional mounting technology in which a plurality of semiconductor chips are stacked in a single package is attracting attention as a technique for increasing the mounting density of LSIs. . A method of stacking semiconductor chips by wire bonding has already been put into practical use, and is used for stacking flash memories from the viewpoint of increasing capacity. However, in wire bonding, the wiring length used for connection between electrodes is very long compared to the order of mm and the length of the wiring in the chip, so that it can be applied to devices that handle high-speed signals such as DRAM and logic. Cannot expect much from the viewpoint of signal delay. Therefore, a through electrode that penetrates up and down with a conductive material such as copper is formed inside the substrate, and the semiconductor chips are joined at the shortest distance via the through electrode, thereby realizing further high speed and miniaturization. An electrode-type three-dimensional stacking technique has been studied.

  Here, since the chips cannot be bonded to each other simply by providing a through electrode inside the substrate, an electrode pad is formed immediately above the through electrode on the surface of the substrate, or a rewiring layer is formed to position the electrode pad. Need to be rearranged. It is also conceivable to form a lead-free solder layer for bonding on the electrode pad.

  1 and 2 show a manufacturing example of a conductive material structure having a through electrode made of copper penetrating vertically inside a substrate and an electrode pad made of copper on the surface of the substrate in the order of steps. First, as shown in FIG. 1A, a substrate W having a plurality of through-electrode recesses 12 opened upward is prepared in a base material 10 made of silicon or the like by, for example, lithography / etching technology. A seed film (conductive film) 14 made of copper or the like as a power feeding layer for electrolytic plating is formed by sputtering or the like on the entire surface of the substrate W including the surface of the through electrode recess 12.

  Then, by performing electrolytic copper plating on the surface of the substrate W, as shown in FIG. 1B, the seed of the substrate W is embedded while the first plating film 16 is embedded in the through-electrode recess 12 provided on the substrate W. A first plating film 16 is deposited on the surface of the film 14. Then, as shown in FIG. 1C, excess first plated copper 16 on the substrate W other than the inside of the through-electrode recess 12 is polished and removed by chemical mechanical polishing (CMP) or the like.

  Next, as shown in FIG. 2A, a resist pattern 18 is formed at a predetermined position on the surface of the substrate W using a photoresist or the like. At this time, the resist opening 20 of the resist pattern 18 is set to a position and shape corresponding to the electrode pad. In this state, by subjecting the surface of the substrate W to electrolytic copper plating, a second plating film 22 is formed in the resist opening 20 of the resist pattern 18 as shown in FIG. Then, as shown in FIG. 2C, the excess seed film 14 and the resist pattern 18 on the surface of the substrate W are removed, and at the same time, the bottom surface of the first plating film 16 filled in the through-electrode recess 12 is external. The back side of the substrate W is polished and removed until it is exposed. Thus, the second plating film in which a plurality of through electrodes 24 made of copper penetrating vertically with the first plating film 16 embedded in the through electrode recess 12 is formed in the resist opening 20 of the resist pattern 18. 22, the conductive material structure in which the electrode pads 26 are respectively formed is completed.

  As described above, application of electrolytic plating to the formation of the through electrode has been studied. However, in order to form the through electrode by electrolytic plating, the outer diameter is several to 100 μm and the depth is several tens. It is required to form a through electrode recess having a thickness of about several hundred μm in advance and embed a plating film made of copper or the like in the through electrode recess. However, it takes a long time to embed a defect-free plating film in such a large through-electrode recess by a conventional general electroplating method, which is an obstacle to practical use from the viewpoint of productivity. It has become. In addition, if an attempt is made to form a conductive material structure in the steps shown in FIGS. 1 and 2, many steps of plating → CMP → resist formation → plating must be performed, resulting in an increase in manufacturing cost. Therefore, the idea of continuously forming an electrode pad, a rewiring layer, and a bonding solder layer directly on the through electrode by electrolytic plating is also established, but each thickness is several μm or more, and the through electrode and If these are continuously formed by electrolytic plating under the same conditions, a longer time is required.

  The present invention has been made in view of the above circumstances, and it is possible to improve the plating time that is an impediment to practical use, and to provide a conductive material structure suitable for realizing three-dimensional mounting with through electrodes in a shorter time. It is an object of the present invention to provide a method for forming a conductive material structure that can be formed by the above method.

According to the first aspect of the present invention, a conductive film is formed on the entire surface including the concave surface of the substrate on which the concave portion for a through electrode used in the three-dimensional lamination technique is formed, and a resist pattern is formed at a predetermined position on the substrate surface The first electrolytic plating is performed by immersing the substrate in a first plating solution containing an additive that suppresses plating growth under a first plating condition using the conductive film as a power supply layer. After embedding the first plating film in the recess and completing the embedding of the first plating film in the recess for the through electrode , under the second plating condition using the conductive film and the first plating film as a power supply layer Then, the second electroplating is performed by immersing the substrate in a second plating solution having a composition different from that of the first plating solution, and the conductive film exposed in the resist opening of the resist pattern and the first plating film Second plating on Were grown, the resist surface in the opening includes a step of forming a flat second plating layer, the said first plating film second plating film is made of a same metal, in the second plating conditions The average current value is higher than the average current value in the first plating condition , and is a method for forming a conductive material structure.

  A case where a plated film, for example, copper as a metal material is embedded by electrolytic plating in a recess for a through electrode formed on the substrate by an etching method or the like, and a resist opening formed by a resist pattern on the substrate surface There is a great difference in the pattern shape and the structure of the power feeding layer in the case where a plating film, for example, copper as a metal material is formed in the part by electrolytic plating to form an electrode pad or the like (case (2)). In the case (1), the through electrode recess has an outer diameter of several to several tens of μm, a depth of about 10 to 100 μm and an aspect ratio (ratio of the depth to the hole diameter) of 1 or more. In the case (2), the resist pattern has a thickness of several to several tens of μm, for example, and the outer diameter or width of the resist opening is about several to several tens of μm.

  In the case (1), since the aspect ratio of the through electrode recess is 1 or more and the seed film (feeding layer) is also present on the side surface of the through electrode recess, the plating film grows from the bottom of the through electrode recess. If the plating film is not formed under the bottom-up growth conditions that give priority to the growth of the plating film, priority is given to the growth of the plating film at the entrance of the through-electrode recess, and voids or seams are added to the plating film embedded in the through-electrode recess This causes plating defects. For this reason, for example, a plating solution with enhanced performance of an additive for suppressing the growth of the plating film at the entrance portion of the through-electrode recess is used, and after initial plating with a certain current, the current value is once It is necessary to optimize several conditions, such as repeatedly waiting for the recovery of the consumption of copper ions in the through electrode recesses.

  In the case (2), the power feeding layer is present only at the bottom of the resist opening surrounded by the resist pattern, so that through-mask plating is performed, and if the electrolytic plating is performed as it is, a plating film grows from the bottom of the resist opening. For this reason, there are few concerns that defects, such as a void and a seam, arise in a plating film. However, there is a possibility that the pattern shape of the plating film is uneven due to the flow velocity distribution of the plating solution inside the resist pattern. This phenomenon tends to occur when sufficient copper ions cannot be supplied with respect to the plating speed, that is, when plating is performed in a diffusion-controlled region. Therefore, in this case, optimization of the flow conditions of the plating solution, such as mechanical stirring and air stirring, is more important than the composition and current density of the plating solution.

Note that when the plating film is embedded in the through electrode recess under the resist opening, the concentration distribution of the plating solution existing in the resist pattern is affected more than when the plating film is embedded in the resist opening. since receiving, in addition to the optimization of the additive and the current condition of a plating solution in the case (1), optimizing the flow conditions of the plating liquid is important.

  As described above, it is necessary to optimize the plating conditions suitable for each shape, for example, the current value, the plating solution, and the stirring conditions of the plating solution, in order to increase the completeness of the plating film and the film formation efficiency. is there. According to the present invention, the first electrolytic plating is performed under the first plating condition to embed the first plating film in the through electrode recess, and then the second electrolytic plating is performed under the second plating condition to form the conductive film on the conductive film. This requirement can be met by growing the second plating film in the resist opening of the resist pattern formed at the predetermined position. In addition, after the resist pattern is formed in advance, the first electrolytic plating in which the first plating film is embedded in the through electrode recess, and the second electrolytic plating in which the second plating film is grown in the resist opening of the resist pattern By carrying out continuously, the plating time can be shortened and the productivity can be improved.

  The invention described in claim 2 is the method for forming a conductive material structure according to claim 1, wherein the height of the resist pattern is 5 μm to 100 μm.

  When the rewiring is formed with the second plating film formed in the resist opening on the substrate surface, the film thickness of the second plating film is considered in consideration of the frequency of the electric signal flowing through the rewiring and the supplied current value. Needs to be at least about 5 μm. In the case where the electrode pad or the post is formed with the second plating film formed in the resist opening on the substrate surface, it is desirable that the film thickness of the second plating film be several tens of μm in consideration of subsequent bonding conditions. Furthermore, when a bonding material such as solder for bonding is placed on the electrode pad by electrolytic plating, a height of about several tens of μm is further added to the resist pattern. For this reason, the height of the resist pattern is preferably at least 5 μm and not more than about 100 μm.

  The invention according to claim 3 is the method for forming a conductive material structure according to claim 1 or 2, wherein the first plating film and the second plating film are made of copper or a copper alloy.

  The first plating film embedded in the through-electrode recess is used as a through-electrode that realizes further speeding up and downsizing by joining semiconductor chips at the shortest distance. For this reason, it is desired that the first plating film has high conductivity and low electrical resistance. As such, gold, silver, copper, or the like can be considered. However, the only thing that can be industrially used for bottom-up plating is copper-based plating. The first plating film formed under the plating conditions is preferably made of copper or a copper alloy.

  From the viewpoint of productivity, the second plating film formed under the second plating condition can be continuously formed of the same metal as the first plating film formed by the first electrolytic plating under the first plating condition. It is desirable to use a metal that is reasonable and has as high conductivity as possible. Accordingly, the second plating film is also preferably made of copper or a copper alloy.

  The entire area of the through-electrode recess is at most about 1% of the entire area of the substrate from the viewpoint of securing the area of the device portion and does not exceed several percent. On the other hand, the area of the rewiring or electrode pad is generally several to several tens of percent of the total area of the substrate. For this reason, in the first electroplating under the first plating conditions, it is sufficient to supply only the current necessary for filling the concave portion for the through electrode with the first plating film. However, the second plating film serving as a rewiring or electrode pad When the second electrolytic plating under the second plating conditions for forming the film is performed at the same current as the first electrolytic plating, the plating time becomes longer. For this reason, it is desirable that the average current value in the second plating condition is higher than the average current value in the first plating condition.

According to a fourth aspect of the present invention, after the second plating film is grown to the middle of the height of the resist pattern by the second electroplating under the second plating condition, the third electrolysis under the third plating condition is performed. performing plating, a third method of forming a conductive material structure according to any one of claims 1 to 3, characterized in that growing a plated film on the second plating layer.

  Thus, by forming the third plating film on the second plating film, the third plating film can be used as a bonding material for bonding chips. In this case, it is possible to eliminate the need to provide a new resist pattern that leads to an increase in cost by continuously forming the third plating film on the second plating film on which the electrode pads and posts are formed. It is desirable that the third electrolytic plating under the third plating conditions is performed under a plating solution, current density and other plating conditions suitable for it, that is, under plating conditions different from the first plating conditions and the second plating conditions. .

The invention according to claim 5 is the method for forming a conductive material structure according to claim 4 , wherein the third plating film is made of a metal different from the first plating film and the second plating film. It is.

  The third plating film is used as a bonding material, and bonding properties are given priority over conductivity. For this reason, a material different from copper or the like used for the first plating film or the second plating film, for example, tin or tin alloy is preferably used.

The invention according to claim 6 is characterized in that the embedding of the first plating film into the through electrode recess is finished before the through electrode recess is completely filled with the first plating film. Item 6. A method for forming a conductive material structure according to any one of Items 1 to 5 .

  In this way, the first plating film is embedded in the through electrode recess before the through electrode recess is completely filled with the first plating film, that is, the through electrode recess is in the first plating. By changing the plating condition from the first plating condition to the second plating condition at the stage where the concave shape remains on the upper surface of the first plating film before being completely filled with the film, the central portion of the first plating film When the second plating film is formed by the second electrolytic plating under the second plating conditions, only the film thickness of the portion corresponding to the center of the recess for the through electrode of the second plating film is the other part. It is possible to prevent the thickness from becoming thicker.

According to the seventh aspect of the present invention, the plating for a predetermined time with a second current value lower than the first current value is performed at least once before the inside of the through electrode recess is completely filled with the first plating film. The method for forming a conductive material structure according to claim 1, wherein the conductive material structure is formed.
In this way, before the inside of the through electrode recess is completely filled with the first plating film, by performing plating for a predetermined time with the second current value lower than the first current value, ions inside the through electrode recess are formed. Can wait for the recovery of exhaustion.

The invention according to claim 8, the conductive material according to any one of claims 1 to 7, characterized in that the plating while fluidized with stirring paddle that moves substantially parallel to the plating solution said substrate surface This is a method of forming a structure.

As described above, when plating inside the resist opening surrounded by the resist pattern, the plating liquid pattern flow rate distribution in the resist pattern may cause uneven plating pattern shape and a flat surface cannot be obtained. There is sex. Therefore, for example, in a vertical plating apparatus, the plating solution is supplied in an upward flow, and the stirring paddle is reciprocated at high speed substantially parallel to the substrate to move the plating solution during plating. The supply of the plating solution into the opening can be promoted, and the deviation of the pattern shape can be suppressed. As the reciprocating motion, a method of reciprocating while moving little by little in the center of the reciprocating motion may be adopted in addition to simply going back and forth.

The invention according to claim 9 is the conductive material structure according to any one of claims 1 to 7 , wherein plating is performed while flowing a plating solution with a stirring paddle rotating with respect to the substrate surface. It is a forming method.
The invention described in claim 10 is configured such that a bubble made of nitrogen is supplied into the second plating solution so that the bubble supplied into the second plating solution flows along the entire area of the substrate surface. A method for forming a conductive material structure according to any one of claims 1 to 9.

  As a method for promoting the supply of the plating solution into the resist opening, in addition to the method using the reciprocating stirring paddle as described above, for example, in a jet type plating apparatus, the plating solution is supplied in an upward flow, and the substrate By causing the plating solution to flow during plating by the stirring paddle rotating with respect to the surface, the supply of the plating solution into the resist opening can be promoted, and the unevenness of the pattern shape can also be suppressed. In this case, since the flow of the plating solution at the center of rotation is relatively low, the entire surface of the substrate can be obtained by using a combination of separating the center of rotation from the center of the substrate and moving the center of rotation little by little relative to the substrate surface. A uniform liquid flow state can be achieved.

  According to the present invention, it is possible to form a conductive material structure used for realizing three-dimensional stacking with through electrodes at a realistic cost and time and with high in-plane uniformity of the plating film. Further, a bonding material necessary for bonding chips can be formed simultaneously.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 3 shows an overall layout of a plating treatment facility (electrolytic copper plating facility) used in the method for forming a conductive material structure of the present invention. This plating processing equipment is configured to automatically and continuously perform all steps of substrate pre-treatment, plating treatment and post-plating treatment. The interior of the apparatus frame 110 to which the exterior panel is attached is a partition plate. 112 is divided into a plating space 116 for performing the plating process on the substrate and the substrate to which the plating solution adheres, and a clean space 114 for performing other processes, that is, a process not directly related to the plating solution. Then, two substrate holders 160 (see FIG. 4) are arranged in parallel in the partition portion partitioned by the partition plate 112 that partitions the plating space 116 and the clean space 114, and between the substrate holders 160. A substrate detachment table 162 is provided as a substrate delivery unit for detaching the substrate. The clean space 114 is connected to a load / unload port 120 on which a substrate cassette containing substrates is placed and mounted, and the apparatus frame 110 is provided with an operation panel 121.

  Inside the clean space 114, an aligner 122 for aligning the position of the orientation flat or notch of the substrate in a predetermined direction and two cleaning / drying devices 124 for cleaning the substrate after plating and rotating it at high speed for spin drying are arranged. Has been. Further, these processing devices, that is, the aligner 122 and the cleaning / drying device 124 are positioned substantially at the center, and are mounted on the processing devices 122 and 124, the substrate attaching / detaching table 162, and the load / unload port 120. A first transfer robot 128 that transfers and transfers substrates to and from the substrate cassette is disposed.

  The aligner 122 and the cleaning / drying device 124 disposed in the clean space 114 hold and process the substrate in a horizontal posture with the surface facing upward. The transfer robot 128 holds the substrate in a horizontal posture with the surface facing upward, and transfers and delivers the substrate.

  In the plating space 116, in order from the partition plate 112 side, a stocker 164 for storing and temporarily holding the substrate holder 160, for example, the surface of the substrate is washed with pure water and wetted with pure water to improve hydrophilicity. A pretreatment device 126 that performs pre-washing treatment, for example, an oxide film with high electrical resistance on the surface of the seed layer formed on the surface of the substrate is removed by etching with an inorganic acid such as sulfuric acid or hydrochloric acid or an organic acid solution such as citric acid or oxalic acid. Activation treatment device 166, first water washing device 168a for washing the surface of the substrate with pure water, plating device (electrolytic copper plating device) 170 for performing plating treatment (electrolytic copper plating treatment), second water washing device 168b and after the plating treatment Blow devices 172 for draining the substrates are sequentially arranged. Two second transfer robots 174 a and 174 b are disposed along the rails 176 so as to be located on the side of these devices. The one second transfer robot 174 a transfers the substrate holder 160 between the substrate attaching / detaching table 162 and the stocker 164. The other second transfer robot 174b transfers the substrate holder 160 between the stocker 164, the pretreatment device 126, the activation treatment device 166, the first water washing device 168a, the plating device 170, the second water washing device 168b, and the blow device 172. I do.

  As shown in FIG. 4, the second transfer robots 174 a and 174 b include a body 178 extending in the vertical direction, and an arm 180 that can move up and down along the body 178 and can rotate about the axis. The arm 180 is provided with two substrate holder holding portions 182 that detachably hold the substrate holder 160 in parallel. The substrate holder 160 is configured to detachably hold the substrate W with the surface exposed and the peripheral edge sealed.

  The stocker 164, the pretreatment device 126, the activation treatment device 166, the rinsing devices 168a and 168b, and the plating device 170 hook the projections 160a projecting outwardly provided at both ends of the substrate holder 160 to the upper end portion, and The holder 160 is supported while being suspended in the vertical direction. The pretreatment device 126 includes two pretreatment tanks 127 that hold pure water therein, and as shown in FIG. 4, a second transfer robot that holds a substrate holder 160 on which a substrate W is mounted in a vertical state. The arm 180 of 174b is lowered, and the substrate holder 160 is hooked on the upper end portion of the pretreatment tank 127 and supported by being suspended, so that the substrate holder 160 is immersed in the pure water in the pretreatment tank 127 together with the substrate W. Is configured to do. The activation processing apparatus 166 includes two activation processing tanks 183 that hold a chemical solution therein, and as shown in FIG. 4, the second transfer that holds the substrate holder 160 on which the substrate W is mounted in a vertical state. The arm 180 of the robot 174b is lowered, and the substrate holder 160 is hooked on the upper end portion of the activation treatment tank 183 and supported by being suspended, so that the substrate holder 160 and the substrate W are immersed in the chemical solution in the activation treatment tank 183. An activation process is performed.

  Similarly, each of the water washing apparatuses 168a and 168b includes two washing tanks 184a and 184b each holding pure water therein, and the plating apparatus 170 includes a plurality of plating tanks 186 each holding a plating solution therein. In the same manner as described above, the substrate holder 160 and the substrate W are immersed in pure water in the water washing tanks 184a and 184b or in a plating solution in the plating tank 186 so that the water washing process and the plating process are performed. Has been. The blower 172 lowers the arm 180 of the second transfer robot 174b that holds the substrate holder 160 with the substrate W mounted thereon in a vertical state, and blows air or an inert gas onto the substrate W mounted on the substrate holder 160. Thus, the substrate is blown.

  As shown in FIG. 5, the plating apparatus 170 is provided with a plating tank 186 that holds a certain amount of plating solution Q inside, and a peripheral portion of the plating solution Q is sealed with a substrate holder 160 in a watertight manner. The substrate W holding the exposed (plating surface) is immersed and arranged vertically. In this example, as the plating solution Q, a plating solution containing at least one of an organic sulfur compound, a polymer compound, and an organic nitrogen compound in addition to copper ions, supporting electrolytes, and halogen ions is used. Sulfuric acid is preferably used as the supporting electrolyte, and chlorine is preferably used as the halogen ion.

  On the upper outer periphery of the plating tank 186, an overflow tank 200 for receiving the plating solution Q overflowing from the edge of the plating tank 186 is provided. One end of a circulation pipe 204 provided with a pump 202 is connected to the bottom of the overflow tank 200, and the other end of the circulation pipe 204 is connected to a plating solution supply port 186 a provided at the bottom of the plating tank 186. Thereby, the plating solution Q accumulated in the overflow tank 200 is returned to the plating tank 186 as the pump 202 is driven. The circulation pipe 204 is provided with a constant temperature unit 206 for adjusting the temperature of the plating solution Q and a filter 208 for filtering (removing) foreign matter in the plating solution, which are located downstream of the pump 202.

  Furthermore, a bottom plate 210 having a large number of plating solution circulation ports is disposed inside the plating tank 186. Thus, the inside of the plating tank 186 is divided into an upper substrate processing chamber 214 and a lower plating solution dispersion chamber 212. Further, the bottom plate 210 is attached with a shielding plate 216 that hangs downward.

  Thus, in the plating apparatus 170 of this example, the plating solution Q is introduced into the plating solution dispersion chamber 212 of the plating tank 186 as the pump 202 is driven, and passes through a large number of plating solution flow ports provided in the bottom plate 210. Then, it flows into the substrate processing chamber 214, flows upward in parallel with the surface of the substrate W held by the substrate holder 160, and flows out into the overflow tank 200.

  Inside the plating tank 186, a disc-shaped anode 220 along the shape of the substrate W is held vertically by an anode holder 222. The anode 220 is immersed in the plating solution Q when the plating bath 186 is filled with the plating solution Q, and is held by the substrate holder 160 so as to face the substrate W disposed at a predetermined position in the plating bath 186. To do. Further, an adjustment plate (regulation) that adjusts the potential distribution in the plating tank 186 is located in the plating tank 186 between the anode 220 and the substrate holder 160 disposed at a predetermined position in the plating tank 186. Plate) 224 is arranged. In this example, the adjusting plate 224 includes a cylindrical portion 226 and a rectangular flange portion 228, and the material is vinyl chloride as a dielectric. The cylindrical portion 226 has an opening size that can sufficiently limit the expansion of the electric field and a length along the axis. The lower end of the flange portion 228 of the adjustment plate 224 reaches the bottom plate 210.

  Inside the plating tank 186 is positioned between the substrate holder 160 disposed at a predetermined position in the plating tank 186 and the adjustment plate 224, extends in the vertical direction, and reciprocates in parallel with the substrate W. A stirring paddle 232 for stirring the plating solution Q between the substrate holder 160 and the adjustment plate 224 is disposed. Thus, sufficient copper ions can be uniformly supplied to the surface of the substrate W by stirring the plating solution Q with the stirring paddle 232. The distance between the stirring paddle 232 and the surface of the substrate W is preferably 30 mm or less without the stirring paddle 232 coming into contact with the substrate holder 160 in order to obtain a sufficient stirring effect by the stirring paddle 232. More preferably, it is as follows.

As shown in FIGS. 6 and 7, the stirring paddle 232 is composed of a rectangular plate-like member having a constant thickness t of 3 to 5 mm, and a plurality of elongated holes 232a are provided in parallel therein, A plurality of lattice portions 232b extending in the vertical direction are provided. The material of the stirring paddle 232 is, for example, a titanium-coated Teflon (registered trademark). The length L ₁ in the vertical direction of the stirring paddle 232 and the dimension L ₂ in the length direction of the long hole 232 a are set to be sufficiently larger than the vertical dimension of the substrate W. The horizontal length H of the stirring paddle 232 is set so that the length combined with the amplitude (stroke) of the reciprocating motion of the stirring paddle 232 is sufficiently larger than the horizontal dimension of the substrate W. .

  The width and number of the elongated holes 232a are required so that the lattice portion 232b between the elongated holes 232a and the elongated holes 232a efficiently stirs the plating solution, and the plating solution efficiently passes through the elongated holes 232a. It is preferable to determine the lattice portion 232b to be as thin as possible within a range having rigidity.

  In this example, as shown in FIG. 7, the long holes 232a are formed vertically so that the cross section of each lattice portion 232b is rectangular. As shown in FIG. 8A, the corners of the cross section of the lattice portion 232b may be chamfered, and as shown in FIG. 8B, the cross section of the lattice portion 232b becomes a parallelogram. An angle may be added to the lattice portion 232b.

  As shown in FIG. 9, the stirring paddle 232 is fixed to the horizontally extending shaft 238 by a clamp 236 fixed to the upper end of the stirring paddle 232, and the shaft 238 slides to the left and right while being held by the shaft holding portion 240. It can be done. The end of the shaft 238 is connected to a paddle drive unit 242 that reciprocates the stirring paddle 232 in the left and right directions. The paddle drive unit 242 rotates the motor 244 in a reciprocating motion of the shaft 238 by a crank mechanism (not shown). Convert to In this example, a control unit 246 that controls the moving speed of the stirring paddle 232 by controlling the rotation speed of the motor 244 of the paddle driving unit 242 is provided. The paddle drive mechanism is not only a crank mechanism, but also a ball screw that converts the rotation of the servo motor into a linear reciprocating motion of the shaft, or a linear motor that reciprocates the shaft linearly. But it ’s okay. The moving speed of the stirring paddle 232 is preferably 0.2 m / sec or more, and more preferably 0.5 or more in order to obtain a sufficient stirring effect by the stirring paddle 232. The moving speed of the stirring paddle 232 is generally 2.0 m / sec or less from the viewpoint of device design.

  The plating apparatus 170 is provided with a plating power source 250 in which an anode is connected to the anode 220 via a conductor and a cathode is connected to the substrate W via a conductor during plating. In this example, a plating power source 250 having a supply current range of 10 times or more is used.

  According to this plating apparatus 170, first, the plating tank 186 is filled with a predetermined amount of the plating solution Q having a predetermined composition and circulated. Then, the substrate holder 160 holding the substrate W is lowered, and the substrate W is placed at a predetermined position immersed in the plating solution Q in the plating tank 186. The anode of the plating power source 250 is the anode 220, and the cathode is the substrate W. Connect to each. In this state, if necessary, the stirring paddle 232 is moved in parallel with the substrate W, and the plating solution Q between the adjustment plate 224 and the substrate W is stirred by the stirring paddle 232, whereby the surface of the substrate W is A plating film is grown on. Further, if necessary, the pump 202 of the circulation pipe 204 is driven to cool and maintain a predetermined temperature while circulating the plating solution Q in the plating tank 186. Then, after a predetermined time has elapsed, the application of voltage between the anode 220 and the substrate W is stopped, the reciprocation of the stirring paddle 232 is stopped, and the plating is finished.

Next, a method for forming a conductive material structure according to an embodiment of the present invention will be described.
10 and 11 show a manufacturing example of a conductive material structure having a through electrode made of copper penetrating vertically inside a substrate and an electrode pad made of copper on the substrate surface in the order of steps. First, as shown in FIG. 10A, a substrate W having a plurality of through-electrode recesses 12 opened upward is prepared in a base material 10 made of silicon or the like by, for example, lithography / etching technology. A seed film (conductive film) 14 made of copper as a power feeding layer for electrolytic plating is formed by sputtering or the like on the entire surface including the surface of the through electrode recess 12 on the surface of the substrate W.

  Next, as shown in FIG. 10B, a resist pattern 30 made of a photoresist or the like is formed at a predetermined position on the surface of the substrate W. In this example, an electrode pad 42 (see FIG. 11B) made of copper is formed on the surface of the substrate W. For this reason, as shown in FIG. 12A, the resist opening 32 of the resist pattern 30 is located immediately above the through-electrode recess 12 and is, for example, rectangular along the shape of the electrode pad larger than the recess 12. Shape or circular shape.

  When forming a rewiring for rearranging the position of the electrode pad on the surface of the substrate W, as shown in FIG. 12B, the resist opening 32a of the resist pattern 30a The electrode pad portion 34a located above and the wiring portion 34b extending from the electrode pad portion 34a have a shape along the rewiring.

  The height h of the resist pattern 30 is preferably 5 μm to 100 μm. That is, as described below, the electrode pad and the rewiring are formed by the second plating film 38 formed in the resist opening 32. In the case of the rewiring, the signal frequency and the supplied current value are taken into consideration. Then, the thickness needs to be at least about 5 μm. In the case of an electrode pad or a post, the thickness is preferably several tens of μm in consideration of subsequent bonding conditions. Further, as described below, when a bonding material such as bonding solder is formed by the third plating film formed on the second plating film, the resist pattern 30 is further added with a height of about several tens of μm. Therefore, by setting the height of the resist pattern 30 to at least 5 μm or more and about 100 μm or less, the second plating film 38 and the third plating film 44 having a sufficient film thickness in the resist opening 32 are formed. Can be formed.

  Next, as shown in FIG. 10C, the first electrolytic plating is performed under the first plating condition using the seed film 14 as a power feeding layer and flowing a predetermined plating current between the seed layer 14 and the anode. The first plating film 36 is embedded in the electrode recess 12. At this time, the first plating film may also be formed on the surface of the seed film 14 located in the resist opening other than the through electrode recess 12.

  In this case, the aspect ratio of the through-electrode recess 12 is 1 or more, and the seed film 14 as a power feeding layer exists also on the side surface of the through-electrode recess 12, so that the plating film from the bottom of the through-electrode recess 12 If the first plating film 36 is not formed under the condition of bottom-up growth that gives priority to growth, the growth of the plating film at the entrance of the through-electrode recess 12 is given priority, and the first embedded in the through-electrode recess 12. Plating defects such as voids and seams occur in the plating film 36. For this reason, in the first electrolytic plating under the first plating conditions, for example, a plating solution with improved performance of the additive for suppressing the growth of the plating film at the entrance portion of the through-electrode recess 12 is used. After plating at a certain current, it is necessary to optimize several conditions such as repeatedly reducing the current value and waiting for the recovery of the consumption of copper ions inside the through-electrode recess 12. is there.

  At this time, even if a constant current is allowed to flow between the seed film 14 and the anode as shown in FIG. 13A, the current increases with time as shown in FIG. 13B. A step current may be allowed to flow, and a pulse current that repeats the supply and stop of the current may be allowed to flow as shown in FIG.

The current density of the first electrolytic plating, to promote bottom-up growth, the average current density ^is preferably from ^{0.1mA / cm 2 ~10mA / cm 2} , at 0.1mA ^/ cm ² ~5mA ^/ cm 2 More preferably it is. When the current density of the first electrolytic plating is 0.1 mA / cm ² or less, the plating time for filling the inside of the through-electrode recess 12 with the first plating film becomes long, and the productivity is deteriorated.

  Then, after the first plating film 36 is embedded in the through-electrode recess 12, the second electrolytic plating is performed under the second plating condition using the seed film 14 and the first plating film 36 as a power feeding layer. The embedding of the first plating film 36 in the through electrode recess 12 is preferably completed before the through electrode recess 12 is completely filled with the first plating film 36.

  That is, as described above, so-called bottom-up plating is applied for embedding the through-electrode recess 12 with the first plating film 36, but the first plating film 36 is formed in the through-electrode recess 12 by bottom-up plating. When completely buried, as shown in FIG. 14A, the first plating film 36 generally has a shape in which the central portion of the surface 36a is raised. This is due to the effect of the additive that promotes the growth of the plating film from the center of the recess 12 for the through electrode. This effect is obtained by performing the second electrolytic plating under the second plating condition after the first electrolytic plating is completed. Even if it goes, it tends to continue for a while. For this reason, when the second plating film 38 is formed by the second electrolytic plating under the second plating condition as described below after the first plating film 36 is completely embedded in the through-electrode recess 12, the second plating film Only the thickness of the portion corresponding to the center of the through-electrode recess 12 of 38 is thicker than the other portions. Such local variations in the plating film thickness cause problems in the subsequent bonding and the like, and therefore must be corrected in advance.

  For this reason, the embedding of the first plating film 36 into the through electrode recess 12 is completed before the through electrode recess 12 is completely filled with the first plating film 36, that is, FIG. 14B. As shown in FIG. 3, the plating conditions are changed to the first plating at a stage in which the concave shape remains on the surface 36a of the first plating film 36 before the through-electrode recess 12 is completely filled with the first plating film 36. By changing from the condition to the second plating condition, it is possible to prevent the first plating film 36 from having a raised shape at the center.

  In addition, as described below, the second plating film 38 formed by the second electrolytic plating under the second plating condition forms an electrode pad and a rewiring portion. The film is formed under such conditions as to form a plating film. Accordingly, even when the surface 36a of the first plating film 36 has a slightly concave shape, if the aspect of the resist opening 32 is 2 or less, preferably 1 or less, the first surface having a flat surface in the resist opening 32 is obtained. Two plating films 38 can be formed.

  In the second electrolytic plating under the second plating condition, the seed layer 14 exposed in the resist opening 32 of the resist pattern 30 is used as shown in FIG. A second plating film 38 is grown on the first plating film 36.

  In this case, the seed film 14 and the first plating film 36 that serve as a power feeding layer exist only at the bottom of the resist opening 32 surrounded by the resist pattern 30, and therefore, through-mask plating is performed. A second plating film 38 grows from the bottom of the portion 32. For this reason, there is little concern that defects such as voids and seams occur in the second plating film 38. However, the pattern distribution of the second plating film 38 may be biased due to the flow velocity distribution of the plating solution inside the resist pattern 30. This phenomenon tends to occur when sufficient copper ions cannot be supplied with respect to the plating speed, that is, when plating is performed in a diffusion-controlled region. Therefore, in this case, optimization of the flow conditions of the plating solution, such as mechanical stirring and air stirring, is more important than the composition and current density of the plating solution.

  Air agitation is a process in which the agitation paddle is moved in parallel with the substrate during the plating process to agitate the plating solution. At the same time, for example, a bubble made of air or nitrogen is supplied to the plating solution and supplied to the plating solution. The bubble is allowed to flow along the entire surface of the substrate.

For this reason, in this example, the plating solution is supplied into the plating tank 186 in an upward flow, and the stirring paddle 232 is reciprocated at high speed substantially parallel to the substrate W to move the plating solution during plating. Thus, the supply of the plating solution into the resist opening 32 can be promoted, and the uneven pattern shape can be suppressed. As the reciprocating motion of the agitation paddle 232, a method of reciprocating while moving little by little in the center of the reciprocating motion may be adopted in addition to simply going back and forth.

In this example, the stirring paddle 232 is reciprocated at high speed substantially parallel to the substrate W to move the plating solution during plating. For example, in a jet type plating apparatus, the plating solution is flowed upward. In addition, the plating solution is caused to flow during plating by a stirring paddle rotating with respect to the substrate surface, thereby promoting the supply of the plating solution into the resist opening and suppressing the deviation of the pattern shape. Good. In this case, since the flow of the plating solution at the center of rotation is relatively low, the entire surface of the substrate can be obtained by using a combination of separating the center of rotation from the center of the substrate and moving the center of rotation little by little relative to the substrate surface. A uniform liquid flow state can be achieved.

  As described above, according to this example, the first electrolytic plating is performed under the first plating condition, the first plating film 36 is embedded in the through-electrode recess 12, and then the second electrolysis is performed under the second plating condition. By plating and growing the second plating film 38 in the resist opening 32 of the resist pattern 30 formed at a predetermined position on the substrate surface, plating conditions suitable for each shape, such as current value, plating solution, The agitation conditions of the plating solution and the like can be optimized to increase the integrity of the first plating film 36 and the second plating film 38 and the film formation efficiency. In addition, after the resist pattern 30 is formed in advance on the surface of the substrate W, the first electrolytic plating in which the first plating film 36 is embedded in the through-electrode recess 12 and the resist opening 30 in the resist pattern 30. By continuously performing the second electrolytic plating for growing the second plating film 38, the plating time can be shortened and the productivity can be improved.

  Here, the area of the entire through-electrode recess 12 is about 1% of the entire area of the substrate from the viewpoint of securing the area of the device portion and does not exceed several percent. On the other hand, the area of the rewiring or electrode pad is generally several to several tens of percent of the total area of the substrate. For this reason, in the first electroplating under the first plating conditions, it is sufficient to supply only the current necessary for filling the through-electrode recess 12 with the first plating film 36, but the second wiring which becomes a rewiring or electrode pad. If the second electrolytic plating under the second plating condition for forming the plating film 38 is performed at the same current as the first electrolytic plating, the plating time becomes long. For this reason, it is desirable that the average current value in the second plating condition is higher than the average current value in the first plating condition.

  Generally, since it is desired to increase the current value according to the area to be plated, the average current value of the second plating condition is at least twice the average current value of the first plating condition, generally about 10 times. It is desirable that Therefore, when the first electrolytic plating and the second electrolytic plating are continuously performed in one plating tank, it is desirable that the plating power source mounted on the plating apparatus has a range of 10 times or more as the supply current. As described above, in the first electroplating under the first plating conditions, a step current or a pulse current can be used, but also in this case, the average current in the second electroplating under the second plating conditions It is desirable that the value be equal to or greater than the average current value in the second electrolytic plating under the first plating conditions.

  The first plating film 36 embedded in the through-electrode recess 12 is used as a through-electrode for further speeding up and downsizing by joining the semiconductor chips at the shortest distance as described below. . For this reason, the first plating film 36 is desired to have high conductivity and low electrical resistance. As such, gold, silver, copper, or the like can be considered. However, the only thing that can be industrially used for bottom-up plating is copper-based plating. The first plating film 36 formed under the plating conditions is preferably made of copper or a copper alloy.

  In addition, for the second plating film 38 formed under the second plating conditions, it is possible to continuously form the same metal as the first plating film 36 formed by the first electrolytic plating under the first plating conditions. It is desirable to use a metal that is rational from the point of view and that is as conductive as possible. Therefore, the second plating film 38 is also preferably made of copper or a copper alloy.

  Next, as shown in FIG. 11B, the excess seed film 14 and the resist pattern 30 on the surface of the substrate W are removed, and at the same time, the bottom surface of the first plating film 36 embedded in the through-electrode recess 12. The back surface side of the substrate W is polished and removed until is exposed to the outside. Thus, the second plating film in which the plurality of through electrodes 40 made of copper penetrating vertically with the first plating film 36 embedded in the through electrode recess 12 is formed in the resist opening 32 of the resist pattern 30. In 38, the conductive material structure in which the electrode pads 42 are respectively formed is completed. The electrode pad 42 has a thickness of several tens of micrometers, for example.

  FIG. 15 shows a manufacturing example of a conductive material structure according to another embodiment of the present invention in the order of steps. In the same manner as in the above example, as shown in FIG. 10C, the first plating film 36 is embedded in the through-electrode recess 12 by the first electrolytic plating under the first plating conditions. Then, the second electrolytic plating is performed under the second condition, and as shown in FIG. 15A, the second plating film 38 is grown to the middle of the height of the resist pattern 30, and further, under the third plating condition. Third electrolytic plating is performed to grow a third plating film 44 on the second plating film 38.

  The third plating film 44 is used as a bonding layer 46 as a bonding material for bonding chips as described below. By continuously forming the third plating film 44 on the second plating film 38 for forming the electrode pads and posts, it is not necessary to provide a new resist pattern for forming the bonding layer, which leads to an increase in cost. Can do. It is desirable that the third electrolytic plating under the third plating conditions is performed under a plating solution, current density and other plating conditions suitable for it, that is, under plating conditions different from the first plating conditions and the second plating conditions. .

  Further, since the third plating film 44 is used as a bonding material as described above, the bonding property is given priority over the conductivity. For this reason, a material different from copper used for the first plating film 36 and the second plating film 38, for example, tin or tin alloy is preferably used.

  Next, as shown in FIG. 15B, the excess seed film 14 and the resist pattern 30 on the surface of the substrate W are removed, and at the same time, the bottom surface of the first plating film 36 embedded in the through electrode recess 12. The back surface side of the substrate W is polished and removed until is exposed to the outside. Thus, the second plating film in which the plurality of through electrodes 40 made of copper penetrating vertically with the first plating film 36 embedded in the through electrode recess 12 is formed in the resist opening 32 of the resist pattern 30. The conductive material structure in which the electrode pad 42 is formed at 38 and the bonding layer 46 as a bonding material is formed by the third plating film 44 formed on the second plating film 38 is completed. The thickness of the bonding layer 46 is, for example, several tens of μm.

  Next, using the plating processing facility (electrolytic copper plating processing facility) shown in FIG. 3, the first plating film 36 shown in FIG. 10C and the second plating film 38 shown in FIG. Will be described.

  First, as shown in FIG. 10 (b), a plurality of through-electrode recesses 12 opened upward are formed in a base material 10 made of silicon or the like, and a seed layer as a power supply layer for electrolytic plating is formed on the entire surface. A substrate W on which (conductive film) 14 is formed is prepared. Then, this substrate W is accommodated in a substrate cassette with its surface (surface to be plated) facing up, and this substrate cassette is mounted on the load / unload port 120.

  One substrate W is taken out from the substrate cassette mounted on the load / unload port 120 by the first transfer robot 128 and placed on the aligner 122 so that the orientation flats, notches and the like of the substrate W are aligned in a predetermined direction. On the other hand, in the substrate attachment / detachment table 162, the substrate holder 160 stored in the vertical position in the stocker 164 is taken out by the second transfer robot 174a, and is rotated 90 degrees to be in a horizontal state and placed on the substrate attachment / detachment table 162. Two are placed in parallel.

  Then, the substrate W, which is placed on the aligner 122 and whose orientation flat or notch is positioned in a predetermined direction, is transported by the first transport robot 128, and the peripheral portion is sealed to the substrate holder 160 placed on the substrate detachment table 162. Install. Then, the two substrate holders 160 loaded with the substrate W are simultaneously gripped by the second transport robot 174a, lifted, transported to the stocker 164, and rotated 90 ° to bring the substrate holder 160 into a vertical state. Thereafter, it is lowered, and the two substrate holders 160 are suspended and held (temporarily placed) on the stocker 164. This is repeated sequentially, and the substrate is sequentially mounted on the substrate holder 160 housed in the stocker 164, and is suspended and temporarily held (temporarily placed) at a predetermined position of the stocker 164.

  On the other hand, in the second transfer robot 174b, the two substrate holders 160 mounted with the substrates and temporarily placed on the stocker 164 are simultaneously gripped and raised, and then transferred to the pretreatment device 126. In the pretreatment device 126, the substrate W is immersed in a pretreatment liquid such as pure water placed in the pretreatment tank 127 to perform pretreatment (pretreatment with washing). The pure water as the pretreatment liquid used at this time is controlled to have a dissolved oxygen concentration in the pure water of 2 mg / L or less by introducing a vacuum degassing device or an inert gas. Next, the substrate holder 160 on which this substrate is mounted is transferred to the activation processing apparatus 166 in the same manner as described above, and an inorganic acid such as sulfuric acid or hydrochloric acid, citric acid, oxalic acid, or the like placed in the activation processing tank 183. The substrate is immersed in the organic acid solution to etch the oxide film having a large electric resistance on the surface of the seed layer, thereby exposing a clean metal surface. The acid solution used at this time can control the dissolved oxygen concentration in the acid solution in the same manner as the pure water for pretreatment. Further, the substrate holder 160 mounted with the substrate is transported to the first water washing device 168a in the same manner as described above, and the surface of the substrate is washed with pure water placed in the water washing tank 184a.

  In the same manner as described above, the substrate holder 160 mounted with the substrate that has been washed with water is transported to the plating apparatus 170 and suspended and supported in the plating tank 186 while being immersed in the plating solution 188 in the plating tank 186. The surface of the substrate W is plated.

  After immersing the substrate W held by the substrate holder 160 in the plating solution 188 and before starting the first electrolytic plating under the first plating conditions, the washing water and the plating solution remaining inside the through electrode recess 12 are removed. A non-energized immersion time for replacement may be provided. However, since the seed layer is dissolved by the plating solution if the non-conductive immersion time is too long, the non-conductive immersion time is preferably 1 minute or less.

At this time, as described above, first electrolytic plating is performed under the first plating condition, and the first plating film 36 is embedded in the through-electrode recess 12 as shown in FIG. This first plating condition is a bottom-up growth condition that gives priority to the growth of the plating film from the bottom of the through electrode recess 12. Then, after the first plating film 36 is embedded in the through-electrode recess 12, the second electrolytic plating is performed under the second plating condition instead of the first plating condition, and FIG. As shown in a), a second plating film 38 is grown on the conductive film 12 and the first plating film 36 exposed in the resist opening 32 of the resist pattern 30. The second plating condition is, for example, a condition in which the average current value is twice or more, generally 10 times or more higher than the first plating condition, and the movement of the stirring paddle 232 for stirring the plating solution Q is optimized.
In addition, you may make it perform the 1st electrolytic plating on the 1st plating conditions, and the 2nd electrolytic plating on the 2nd plating conditions using the plating solution from which a composition differs.

  Then, after the end of plating, the substrate holder 160 with the substrate mounted thereon is held again by the second transfer robot 174b and pulled up from the plating tank 186, and the plating process is completed.

  Then, in the same manner as described above, the substrate holder 160 is transported to the second water washing device 168b and immersed in pure water placed in the water washing tank 184b to clean the surface of the substrate with pure water. Thereafter, the substrate holder 160 mounted with the substrate is transported to the blower 172 in the same manner as described above, and here, an inert gas or air is blown toward the substrate to adhere the plating solution attached to the substrate holder 160. Remove water drops. Thereafter, the substrate holder 160 with the substrate mounted thereon is returned to a predetermined position of the stocker 164 and held in the same manner as described above.

  The second transfer robot 174b sequentially repeats the above operations, and returns the substrate holder 160, on which the plated substrate is mounted, to the predetermined position of the stocker 164 in a suspended manner. On the other hand, in the second transfer robot 174a, the two substrate holders 160 to which the substrate after the plating process is mounted and returned to the stocker 164 are simultaneously grasped and placed on the substrate attaching / detaching table 162 in the same manner as described above. .

  Then, the first transfer robot 128 disposed in the clean space 114 takes out the substrate from the substrate holder 160 placed on the substrate attachment / detachment table 162 and transfers it to one of the cleaning / drying devices 124. Then, the substrate held horizontally with the cleaning / drying device 124 is cleaned with pure water or the like, spin-dried by high-speed rotation, and then loaded / removed by the first transfer robot 128. Returning to the substrate cassette mounted on the unload port 120, a series of plating processes is completed. Thus, as shown in FIG. 11A, the first plating film 36 for forming the through electrode 40 is embedded in the through electrode recess 12, and the electrode pad 42 is formed in the resist opening 32 of the resist pattern 30. The substrate W on which the second plating film 38 is formed is obtained.

  As shown in FIG. 15, when the third plating film 44 is formed on the second plating film 38 by the third electrolytic plating under the third plating condition, the second plating film 38 is formed as described above. Is transferred to another electrolytic plating apparatus, and the third plating film 44 is formed by the other electrolytic plating apparatus.

  The embodiment of the present invention has been described so far, but the present invention is not limited to the above-described embodiment, and it is needless to say that the present invention may be implemented in various different forms within the scope of the technical idea.

It is a figure which shows to the grinding | polishing process of the manufacture example of the electrically-conductive material structure which has the penetration electrode penetrated up and down in the conventional inside in order of a process. It is a figure which shows the back of the grinding | polishing process of FIG. 1 in order of a process. BRIEF DESCRIPTION OF THE DRAWINGS It is a whole layout drawing of the plating processing equipment provided with the plating apparatus (electrolytic plating apparatus) used for this invention. It is a schematic diagram of the conveyance robot with which the plating processing equipment shown in FIG. 3 is equipped. It is a schematic sectional drawing of the plating apparatus with which the plating processing equipment shown in FIG. 3 is equipped. It is a top view which shows the stirring paddle of the plating apparatus shown in FIG. It is the sectional view on the AA line of FIG. FIG. 8 is a view corresponding to FIG. 7 showing a modified example of different stirring paddles. It is the schematic which shows the paddle drive mechanism of the plating apparatus shown in FIG. 5 with a plating tank. It is a figure which shows in order of process until the time of the 1st plating film film-forming of the manufacture example of the electrically-conductive material structure in embodiment of this invention. It is a figure which shows the order after process formation of the 1st plating film of FIG. FIG. 12 (a) shows a plan view of FIG. 10 (b), and FIG. 12 (b) shows a plan view of different resist patterns. It is a graph which shows each different relationship between the electric current value supplied at the time of the 1st electrolytic plating of 1st plating conditions, and time. FIG. 14A shows a state in which the first plating film is completely embedded in the through electrode recess, and FIG. 14B shows a state before the through electrode recess is completely filled with the first plating film. Indicates the state. It is a figure which shows after the 1st plating film film-forming of the manufacture example of the electrically-conductive material structure in other embodiment of this invention in process order.

Explanation of symbols

12 Recess for penetrating electrode 14 Seed film (conductive film)
30 resist pattern 32 resist opening 36 first plating film 38 second plating film 40 through electrode 42 electrode pad 44 third plating film 46 bonding layer 124 cleaning / drying device 126 pretreatment device 160 substrate holder 164 stocker 166 activation treatment device 168a, 168b Flushing device 170 Plating device 172 Blow device 186 Plating tank 220 Anode 224 Adjustment plate 232 Stir paddle 250 Plating power source

Claims (10)

Forming a conductive film on the entire surface including the concave surface of the surface of the substrate on which the concave portion for the through electrode used in the three-dimensional lamination technology is formed,
A resist pattern is formed at a predetermined position on the substrate surface,
The first electrolytic plating is performed by immersing the substrate in a first plating solution containing an additive that suppresses plating growth under the first plating condition using the conductive film as a power feeding layer, and the first electrolytic plating is performed in the through electrode recess Embedding the first plating film,
After the first plating film is embedded in the through electrode recess, the composition of the first plating solution is a second plating condition using the conductive film and the first plating film as a power supply layer. The second electrolytic plating is performed by immersing the substrate in a second plating solution having a different thickness, and a second plating film is grown on the conductive film exposed in the resist opening of the resist pattern and the first plating film , Forming the second plating film having a flat surface in the resist opening,
The first plating film and the second plating film are made of the same metal,
The method for forming a conductive material structure , wherein an average current value in the second plating condition is higher than an average current value in the first plating condition .   The method for forming a conductive material structure according to claim 1, wherein the height of the resist pattern is 5 μm to 100 μm.   The method for forming a conductive material structure according to claim 1 or 2, wherein the first plating film and the second plating film are made of copper or a copper alloy. After the second plating film is grown to the middle of the height of the resist pattern by the second electroplating under the second plating condition, the second electroplating is performed under the third plating condition, and the second plating is performed. forming method of the conductive material structure according to any one of claims 1 to 3, characterized in that growing the third plating layer on the membrane. The method for forming a conductive material structure according to claim 4, wherein the third plating film is made of a metal different from the first plating film and the second plating film. According to any one of claims 1 to 5, characterized in that ends before the implantation of the first plating layer to the through electrode in the recess through-electrode in the recess completely filled in the first plating layer Of forming a conductive material structure.   2. The conductive material structure according to claim 1, wherein plating for a predetermined time with a second current lower than the first current is performed at least once before the inside of the through electrode recess is completely filled with the first plating film. Body formation method. Forming method of the conductive material structure according to any one of claims 1 to 7, characterized in that the plating while fluidized with stirring paddle that moves substantially parallel to the first plating solution to the substrate surface. Forming method of the conductive material structure according to any one of claims 1 to 7, characterized in that the plating while fluidized by stirring paddles rotating the first plating solution to the substrate surface. The bubble made of nitrogen is supplied into the second plating solution so that the bubble supplied into the second plating solution flows along the entire area of the substrate surface. The formation method of the electrically-conductive material structure in any one.

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