JP2005029863A - Plating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating apparatus which has a simple apparatus configuration, does not need a complicated operation, can efficiently utilize an anode material, and reduces an anode cost and the operation cost of maintenance for an anode replacement. <P>SOLUTION: This plating apparatus has an anode adjustment plate 36 which is composed of an electrical insulation material and is provided with an opening 36a having a smaller area than a liquid-contact area of the anode 4, arranged in the front surface of the anode 4. Thereby, the adjustment plate affects an electric potential distribution in a plating tank 2, adjusts the electric potential distribution on the surface of the anode 4 and the dissolution rate distribution of the anode 4, consequently uniformizes the thickness-reducing rate on the whole face of the anode 4, makes the anode material effectively used, reduces the anode cost, furthermore, extends the life of the anode, and reduces the maintenance cost for replacing the anode. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plating apparatus that performs plating on the surface (surface to be plated) of a substrate such as a semiconductor wafer, and more particularly to a plating apparatus that is used to form a film of metal or the like on a substrate for an LSI. is there.

  In recent years, a method of forming a metal film or an organic film on a semiconductor wafer or another substrate by using a plating technique has been used in a method for forming a wiring or bump of a semiconductor circuit. For example, gold, silver, copper, solder, nickel, or wiring and bumps (projection-like connection electrodes) in which multiple layers of gold, silver, copper, solder, nickel, or the like are formed at predetermined locations on the surface of a semiconductor wafer on which semiconductor circuits and fine wirings connecting them are formed It is widely practiced to form an electrode and connect it to an electrode of a package substrate or a TAB (Tape Automated Bonding) electrode via this bump. There are various wiring and bump formation methods such as electroplating, electroless plating, vapor deposition, and printing. However, as the number of I / Os in semiconductor chips increases and the pitch becomes narrower, they become finer. The electroplating method (for example, patent document 1) which can respond to this and has a high film-forming speed has come to be used frequently. The metal film obtained by electroplating, which is currently most frequently used, is characterized by high purity, high film formation speed, and simple film thickness control method.

  FIG. 13 is a view showing a conventional example of a so-called dip type plating apparatus in which a substrate and an anode are arranged vertically. In this plating apparatus, an anode 104 held by an anode holder 111 and a substrate W held by a substrate holder 110 are opposed to each other in parallel in a plating tank 102 having a plating solution Q therein. The plating power source 107 is energized between the anode 104 and the substrate W, so that the surface to be plated W1 of the substrate W exposed from the substrate holder 110 is electroplated. Reference numeral 105 shown in FIG. 13 denotes an adjustment plate (regulation plate) made of a dielectric material having a circular hole 105a corresponding to the size of the substrate W therein, and the film thickness distribution of the metal film formed on the substrate W. Is to adjust. Reference numeral 118 denotes a paddle for stirring the plating solution Q near the surface of the substrate W. Reference numeral 150 denotes a plating solution Q supplied from the plating solution supply port 119 provided in the plating vessel 102 to the plating solution discharge port 120. Circulating plating solution circulating means.

  According to this electroplating, the metal ions in the plating solution Q receive electrons from the surface to be plated W1 of the substrate W due to the potential difference between the substrate W and the anode 104, and the metal is deposited on the surface to be plated W1 of the substrate W. A metal film is formed. On the other hand, a plate-like soluble anode is often used as the anode 104, and the metal constituting the anode 104 is ionized by releasing electrons together with the plating due to the potential difference between the substrate W and the anode 104, and is dissolved in the plating solution Q. To go. As the anode 104 is dissolved, the anode 104 is thinned.

  FIG. 14 is a diagram showing a conventional example of a so-called face-down type plating apparatus in which a substrate and an anode are horizontally arranged. In this plating apparatus, a substrate holder 110 for holding a substrate W having a surface (surface to be plated) W1 horizontally and downward is disposed above a plating tank 102 having a plating solution Q therein. The anode 104 is horizontally installed, and the plating power source 107 is energized between the anode 104 and the substrate W, so that the plating surface W1 of the substrate W exposed from the substrate holder 110 is electroplated. . A plating solution supply port 119 is provided at the bottom of the plating tank 102, and an overflow tank 112 is provided at the outer periphery of the upper end of the plating tank 102.

  According to this plating apparatus, the plating solution Q is supplied from the plating solution supply port 119 of the plating tank 102 and flows toward the plating surface W1 of the substrate W, then overflows the plating tank 102 and flows into the overflow tank 112, Through the plating solution discharge port 120, it is circulated again from the plating solution supply port 119 into the plating tank 102.

  Also in the case of this electroplating, the metal ions in the plating solution Q receive electrons from the surface to be plated W1 on which the pretreatment of the substrate W is performed due to the potential difference between the substrate W and the anode 104, and on the surface to be plated W1 of the substrate W. A metal deposits on the film to form a metal film. On the other hand, a plate-like soluble anode is often used as the anode 104, and the metal constituting the anode 104 is ionized by releasing electrons together with the plating due to the potential difference between the substrate W and the anode 104, and is dissolved in the plating solution Q. To go. As the anode 104 is dissolved, the anode 104 is thinned.

  Each of the above-described plating apparatuses exhibits a reduced thickness of the anode due to the characteristics of the tank structure. In general, the thinning rate of the surface of the anode 104 is not uniform and shows a predetermined deviation. This speeds up the replacement period of the anode 104, increases the amount of maintenance work, and increases the anode cost.

  FIG. 15 is a cross-sectional view of the disk-shaped anode 104 used in the plating apparatus shown in FIG. In the case of the anode 104, the amount of thinning at the periphery of the anode is large, and the amount of thinning at the center is small. As a whole, a large amount of anode material still remains, but through holes may occur in the periphery of the anode, so that the anode 104 should be replaced. That is, in the case of the conventional plating apparatus, there is a problem that the anode material is wasted, and the anode cost is increased accordingly, and the anode life is short and the maintenance cost for replacing the anode is also high.

On the other hand, generally, particles called sludge are generated in the process of exhausting the anode 104. If the particles adhere to the surface of the substrate W, there is a possibility of causing defective plating, and keeping the particles away from the substrate W is an effective means for improving the reliability of plating. Therefore, there is a demand for a structure in which particles generated from the anode 104 cannot move to the surface of the substrate W in the circulation path of the plating solution Q in the plating tank 102.
JP 2000-96292 A

  The present invention has been made in view of the above points, and with a simple apparatus configuration and without requiring a complicated operation method, the anode material can be used without waste, reducing the anode cost and the anode replacement maintenance work cost. It is an object of the present invention to provide a plating apparatus that can be used.

  Another object of the present invention is to provide a plating apparatus having a structure in which particles generated from the anode cannot move to the substrate surface with a simple apparatus configuration and a simple operation method.

The invention described in claim 1 is a plating apparatus in which an anode in contact with a plating solution and a substrate are placed opposite to each other, and electroplating is performed on a surface to be plated by energizing between the anode and the substrate. The plating apparatus is characterized in that an anode adjusting plate having an opening hole having an area smaller than an anode wetted area is provided on the anode front surface in part or in whole with a dielectric material.
By installing the anode adjustment plate on the anode front surface, the potential distribution in the plating tank is affected, and the potential distribution on the anode surface and the anode dissolution rate distribution can be adjusted, thereby reducing the thickness of the entire anode surface. Can be made uniform. As a result, the anode material can be used effectively, and the anode cost can be reduced. In addition, the anode life is extended, and the maintenance cost for replacing the anode can be reduced.

The invention according to claim 2 of the present application is the plating apparatus according to claim 1, wherein the anode adjusting plate is attached to an anode holder for holding the anode in a plating tank. is there.
As described above, the anode adjusting plate affects the potential distribution in the plating tank, and can adjust the potential distribution on the anode surface and the anode dissolution rate distribution, thereby uniformly reducing the thinning state of the entire surface of the anode. However, if this anode adjustment plate is attached to the anode holder and integrated, it is not necessary to install the anode adjustment plate separately from the anode holder, and the anode adjustment plate is attached to the anode holder, so the anode is held. There is no need to adjust the position of the anode adjusting plate (separation distance, parallelism, etc.) with respect to the anode holder.

The invention according to claim 3 of the present application is the plating apparatus according to claim 1 or 2, wherein the opening hole of the anode adjusting plate is similar to the outer shape of the anode.
Thereby, the thinning state of the anode can be made uniform, and the anode cost can be reduced by effectively using the anode material. In addition, the life of the anode can be extended and the maintenance cost for replacing the anode can be reduced.

In the plating apparatus according to claim 1 or 2, the opening hole of the anode adjusting plate may be formed by an assembly of small holes. Also by this, the thinning state of the anode can be made uniform, and the anode cost can be reduced by effectively using the anode material. In addition, the life of the anode can be extended and the maintenance cost for replacing the anode can be reduced.
In the plating apparatus according to claim 1 or 2, the opening hole of the anode adjusting plate may be formed of an aggregate of slit-shaped holes. Also by this, the thinning state of the anode can be made uniform, and the anode cost can be reduced by effectively using the anode material. In addition, the life of the anode can be extended and the maintenance cost for replacing the anode can be reduced.

The invention according to claim 4 of the present application is the plating apparatus according to claim 1 or 2, wherein a filter is attached to the opening hole of the anode adjusting plate.
Thereby, the thinning state of the anode can be made uniform, and the anode cost can be reduced by effectively using the anode material. In addition, the life of the anode can be extended and the maintenance cost for replacing the anode can be reduced. Furthermore, since the particles generated from the anode are prevented from flowing near the substrate by the filter, defects on the plating on the surface to be plated of the substrate are less likely to occur.

The invention according to claim 5 of the present application is the plating apparatus according to claim 1 or 2, wherein a functional film that allows ions to pass through is attached to the opening hole of the anode adjusting plate. .
Thereby, the thinning state of the anode can be made uniform, and the anode cost can be reduced by effectively using the anode material. In addition, the life of the anode can be extended and the maintenance cost for replacing the anode can be reduced. Further, since the particles generated from the anode are prevented from going to the vicinity of the substrate by the functional film that allows ions to pass therethrough, defects on the plating on the surface to be plated of the substrate are less likely to occur.

The invention according to claim 6 of the present application is the plating apparatus according to claim 1 or 2, wherein the plating solution supplied into the plating tank from the plating solution supply port provided in the plating tank holding the plating solution is discharged from the plating solution. The plating apparatus is characterized in that a circulation filter is mounted in the middle of a circulation pipe that is discharged from the outlet and circulates.
Thereby, the thinning state of the anode can be made uniform, and the anode cost can be reduced by effectively using the anode material. In addition, the life of the anode can be extended and the maintenance cost for replacing the anode can be reduced. Furthermore, by collecting particles with a circulating filter, a plating solution that does not contain particles is always supplied to the plating tank, thereby preventing defects on the plating on the surface to be plated of the substrate. it can.

  According to the present invention, the thinning state of the anode surface can be made uniform with a simple apparatus configuration and without requiring a complicated operation method, the anode material can be effectively used, and the life of the anode can be substantially achieved. This can reduce the anode consumption cost and the anode replacement maintenance work cost.

  Further, according to the present invention, it is possible to prevent plating defects caused by particles generated during the consumption process of the anode adhering to the substrate surface, and to improve the reliability of plating.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic sectional view showing a plating apparatus according to the first embodiment of the present application. This plating apparatus is a so-called dip type plating apparatus in which the substrate W and the anode 4 are vertically arranged. In this plating apparatus, an anode 4 held by an anode holder 11 and a substrate W held by a substrate holder 10 are opposed to each other in a plating tank 2 having a plating solution Q therein so that both surfaces are parallel to each other. In this way, electroplating is performed on the plated surface W1 of the substrate W exposed from the substrate holder 10 by energizing the anode 4 and the substrate W in contact with the plating solution Q by the plating power source 7. It is composed.

  The plating tank 2 is attached to the bottom thereof and is attached to the plating liquid supply port 19 for supplying the plating liquid Q, the overflow tank 12 formed by partitioning the plating tank 2 by the overflow weir 29, and the bottom of the overflow tank 12 And a plating solution discharge port 20 for discharging the plating solution Q. In the plating tank 2, the paddle 18 and the adjusting plate 5 from the substrate W side are disposed between the soluble anode 4 held by the anode holder 11 and the substrate W held with the surface W 1 to be plated exposed on the substrate holder 10. And an anode adjusting plate 36 according to the present invention. Conductive wires 8 and 9 are connected to the anode 4 and the substrate W from a plating power source 7. The paddle 18 is composed of, for example, a rod-shaped member, and is driven in parallel by moving the paddle driving rod 23 attached to one end of the paddle 18 toward the front and back of the paper surface of FIG. Stir Q. The adjustment plate 5 installed on the front surface of the substrate W is a plate made of a dielectric material having a circular hole 5a corresponding to the size of the substrate W therein, and the film thickness distribution of the metal film formed on the substrate W. Is adjusted to be uniform.

  The anode adjusting plate 36 is partially or entirely made up of a plate-shaped part made of a dielectric material having an opening hole 36a therein, and the anode adjusting plate 36 adjusts the potential distribution on the surface of the anode 4 and the anode dissolution rate distribution. . In the case where the anode 4 is a copper anode having a diameter of 150 mm to 300 mm, the anode adjusting plate 36 may be installed at a position preferably 5 mm to 40 mm, more preferably 10 mm to 30 mm from the surface of the anode 4. In the case of a solder anode of ˜300 mm, it is preferably installed at a position of 30 mm to 70 mm, more preferably 40 mm to 60 mm from the surface of the anode 4. Here, FIGS. 6A and 6B are plan views showing an example of the anode adjusting plate 36. The opening hole 36a is configured similar to the outer shape of the anode 4, and when the anode 4 is circular, as shown in FIG. 6A, the shape of the opening hole 36a is also circular, and when the anode 4 is rectangular, As shown in FIG. 6B, the shape of the opening hole 36a is also rectangular. Further, the opening hole 36a is configured such that its inner diameter is preferably 60 to 90%, more preferably 70 to 80%, than the outer diameter of the anode 4, so that the area of the opening hole 36a is the wetted area of the anode 4. Smaller than that.

  The structure of the anode adjusting plate 36 can be variously modified. For example, as shown in FIGS. 7A and 7B, the opening hole 36a may be formed by an assembly of small holes. As shown in FIGS. 8 (a) and 8 (b) and FIGS. 9 (a) and 9 (b), the opening hole 36a may be formed of an assembly of slit-shaped holes. The point that the opening hole 36a is configured similar to the outer shape of the anode 4 is the same in these embodiments.

  Next, reference numeral 50 shown in FIG. 1 denotes a plating solution circulation means for discharging the plating solution Q supplied into the plating vessel 2 from the plating solution supply port 19 provided in the plating vessel 2 and circulating it. The plating solution circulation means 50 includes a circulation pump 38, a pressure gauge 41, a flow meter 42, a temperature controller 39, and a circulation filter 40 in a circulation pipe 21 that connects the plating solution supply port 19 and the plating solution discharge port 20. It is configured with an attached.

  In the plating apparatus configured as described above, the plating solution Q supplied from the plating solution supply port 19 into the plating tank 2 is caused to overflow into the overflow tank 12 by driving the circulation pump 38. At the same time, the metal ions in the plating solution Q receive electrons from the surface W1 to be plated of the substrate W due to the potential difference between the substrate W and the anode 4 generated by the plating power source 7, and the metal is deposited on the surface W1 of the substrate W to be plated. A metal film is formed. On the other hand, the metal constituting the anode 4 is ionized by emitting electrons together with the plating, and is dissolved in the plating solution Q.

  During the electroplating, the anode 4 is thinned as the anode 4 is dissolved. In the present embodiment, the anode 4 is centered as shown in FIGS. 6 (a) and 6 (b). Since the anode adjusting plate 36 having an opening hole 36a having an area smaller than the liquid contact area is provided immediately before the anode 4, the potential at the periphery of the anode 4 can be kept low. The anodic dissolution rate, which was higher than that of the portion, is kept low, whereby a more uniform thinning distribution of the anode 4 can be obtained.

  On the other hand, in the process of erosion of the anode 4 by electroplating as described above, particles generally called sludge are generated, but in the present embodiment, the particles are collected by the circulation filter 40, and therefore the plating does not always contain particles. The liquid Q is supplied to the plating tank 2, thereby preventing plating defects caused by the particles adhering to the plating surface W <b> 1 of the substrate W and improving the reliability of plating.

  FIG. 2 is a schematic sectional view showing a plating apparatus according to the second embodiment of the present application. In this plating apparatus, the same or corresponding parts as those in the plating apparatus shown in FIG. This plating apparatus is also a so-called dip type plating apparatus in which the substrate W and the anode 4 are arranged vertically (vertical), and the anode 4 held in the anode holder 11 in the plating tank 2 holding the plating solution Q therein. And the substrate W held by the substrate holder 10 are vertically arranged facing each other so that both surfaces are parallel to each other, and energized between the anode 4 and the substrate W by the plating power source 7 to be exposed from the substrate holder 10. The plating surface W1 of the substrate W is configured to be electroplated.

  This plating apparatus is different from the plating apparatus shown in FIG. 1 in that an anode adjustment plate 36 separate from the anode holder 11 is installed immediately before the anode 4 in FIG. 37 is attached to the anode holder 11 itself. That is, the anode adjusting plate 37 has an opening hole 37a similar to the opening hole 36a at the center thereof, and has a fixing portion 37b fixed to the anode holder 11 on the outer periphery thereof. The opening hole 37a is similar to the outer shape of the anode 4, is formed of an assembly of small holes, or is formed of an assembly of slit-like holes, as in the case of the opening hole 36a.

  Also in the anode adjusting plate 37 configured as described above, the potential distribution in the plating tank 2 is affected, and the potential distribution and the anode dissolution rate distribution on the surface of the anode 4 can be adjusted, whereby the entire surface of the anode 4 is adjusted. In this embodiment, since the anode adjusting plate 37 is attached to and integrated with the anode holder 11, it is necessary to install the anode adjusting plate 37 separately from the anode holder 11. This eliminates the need for adjusting the position of the anode adjusting plate (separation distance, parallelism, etc.) with respect to the anode holder 11 holding the anode 4 and simplifying the installation work. I can plan.

  FIG. 3 is a schematic sectional view showing a plating apparatus according to the third embodiment of the present application. In this plating apparatus, the same or corresponding parts as those in the plating apparatus shown in FIG. This plating apparatus is also a so-called dip type plating apparatus in which the substrate W and the anode 4 are arranged vertically (vertical), and the anode 4 held in the anode holder 11 in the plating tank 2 holding the plating solution Q therein. And the substrate W held by the substrate holder 10 are vertically arranged facing each other so that both surfaces are parallel to each other, and energized between the anode 4 and the substrate W by the plating power source 7 to be exposed from the substrate holder 10. The plating surface W1 of the substrate W is configured to be electroplated.

  This plating apparatus is different from the plating apparatus shown in FIG. 1 in that a filter 43 is attached to and covered with the opening hole 36a of the anode adjustment plate 36. The opening hole 36a may be similar to the outer shape of the anode 4, or may be formed of an assembly of small holes or an assembly of slit-shaped holes as in the case of the opening hole 36a shown in FIG. It is the same.

  Also in the anode adjusting plate 36 configured as described above, the potential distribution in the plating tank 2 is affected, and the potential distribution and the anode dissolution rate distribution on the surface of the anode 4 can be adjusted, whereby the entire surface of the anode 4 is adjusted. In this embodiment, particles generated from the anode 4 are prevented from going near the substrate W by the filter 43, so that the surface of the substrate W on the surface W1 to be plated is reduced. Defects are less likely to occur in plating. The same effect can be obtained even if the filter 43 is attached to the opening 37a of the anode adjusting plate 37 shown in FIG.

  FIG. 4 is a schematic sectional view showing a plating apparatus according to a fourth embodiment of the present application. In this plating apparatus, the same or corresponding parts as those in the plating apparatus shown in FIG. This plating apparatus is also a so-called dip type plating apparatus in which the substrate W and the anode 4 are arranged vertically (vertical), and the anode 4 held in the anode holder 11 in the plating tank 2 holding the plating solution Q therein. And the substrate W held by the substrate holder 10 are vertically arranged facing each other so that both surfaces are parallel to each other, and energized between the anode 4 and the substrate W by the plating power source 7 to be exposed from the substrate holder 10. The plating surface W1 of the substrate W is configured to be electroplated.

  This plating apparatus is different from the plating apparatus shown in FIG. 2 in that a functional film 44 is attached to and covered with the opening hole 37a of the anode adjusting plate 37. Here, the functional film 44 is a functional film through which ions can pass, and particles cannot pass through. The opening hole 37a may be similar to the outer shape of the anode 4, or may be formed of an assembly of small holes, or an assembly of slit-shaped holes, as in the case of the opening hole 36a shown in FIG. It is the same.

  Also in the anode adjusting plate 37 configured as described above, the potential distribution in the plating tank 2 is affected, and the potential distribution and the anode dissolution rate distribution on the surface of the anode 4 can be adjusted, whereby the entire surface of the anode 4 is adjusted. In this embodiment, the particles generated from the anode 4 are prevented from going near the substrate W by the functional film 44 that allows ions to pass therethrough. Defects are less likely to occur in the plating on the plating surface W1.

  FIG. 5 is a schematic cross-sectional view showing a plating apparatus according to a fifth embodiment of the present application. This plating apparatus is a so-called face-down type plating apparatus in which a substrate W and an anode 4 are horizontally arranged, and a surface (surface to be plated) W1 is placed horizontally above a plating tank 2 having a plating solution Q therein. A substrate holder 10 that detachably holds the substrate W facing downward is installed, while the anode 4 is horizontally installed at the bottom of the plating tank 2, and the conductor 8, 9 is energized between the anode 4 and the substrate W from the plating power source 7. By doing so, it is configured to perform electroplating on the to-be-plated surface W1 of the substrate W exposed from the substrate holder 10 and in contact with the plating solution Q. A plating solution supply port 19 is connected to the bottom of the plating tank 2, and an overflow tank 12 is provided on the outer periphery of the upper end of the plating tank 2, and a plating solution discharge port 20 is connected to the overflow tank 12. .

  An anode adjustment plate 36 is installed on the front surface (upper surface) of the anode 4. The anode adjusting plate 36 is composed of a plate-like component made of a dielectric material partially or entirely having an opening hole 36a therein, and the anode adjusting plate 36 adjusts the potential distribution and anode dissolution rate distribution on the surface of the anode 4. To do. The anode adjusting plate 36 has the same shape and structure as shown in FIGS. 6 to 9, and the opening hole 36a is similar to the outer shape of the anode 4, and the inner diameter of the opening hole 36a is the anode. 4, the area of the opening hole 36 a may be made smaller than the liquid contact area of the anode 4, and the opening hole 36 a may be formed by an assembly of small holes. Alternatively, it may be formed of an aggregate of slit-like holes.

  According to this plating apparatus, current is passed between the anode 4 and the substrate W from the plating power source 7 by the conductive wires 8 and 9 in a state where the substrate W held on the substrate holder 10 is disposed at a position covering the upper end opening of the plating tank 2. At the same time, the plating solution Q is supplied from the plating solution supply port 19 to the inside of the plating tank 2, overflows into the overflow tank 12 and circulates, and the jet of the plating solution Q is brought into contact with the surface W 1 to be plated of the substrate W. As a result, the metal ions in the plating solution Q receive electrons from the surface to be plated W1 of the substrate W due to the potential difference between the substrate W and the anode 4, and the metal is deposited on the surface to be plated W1 to form a metal film. On the other hand, the metal constituting the anode 4 is ionized by releasing electrons together with the plating due to the potential difference between the substrate W and the anode 4 and is dissolved in the plating solution Q.

  During this electroplating, the anode 4 is reduced in thickness as the anode 4 is dissolved. In the present embodiment, however, an anode having an opening hole 36a having an area smaller than the liquid contact area of the anode 4 at the center. Since the adjustment plate 36 is installed immediately before the anode 4, the potential at the periphery of the anode 4 can be kept low, and as a result, the anode dissolution rate that is higher than the other parts in the periphery of the anode 4 can be kept low. Thus, a more uniform thickness reduction distribution of the anode 4 can be obtained.

  In the same manner as in the above-described embodiments, particles generated during the consumption process of the anode 4 can be obtained by installing a circulation filter in the circulation pipe of the plating solution Q or attaching a filter or ion-permeable functional membrane to the opening hole 36a. Can also be prevented from adhering to the to-be-plated surface W1 of the substrate W.

  FIG. 10 is an overall layout view of a plating apparatus constructed using the plating apparatus according to the present invention. In this plating apparatus, the inside of the apparatus frame 610 to which the exterior panel is attached is divided into a plating space 614 for performing the plating process of the substrate and the process of the substrate to which the plating solution adheres by the partition plate 612, and other processes, that is, plating. It is divided into a clean space 616 that performs processing not directly related to the liquid. Two partition holders 10 (see FIG. 11) are arranged in parallel in a partition section partitioned by a partition plate 612 that partitions the plating space 614 and the clean space 616, and the substrate holder 10 is placed between each of the substrate holders 10 and the substrate. A substrate detachment table 662 is provided as a substrate delivery unit for detachment. The clean space 616 is connected to a load / unload port 620 for mounting a substrate cassette containing substrates, and the apparatus frame 610 is provided with an operation panel 621.

  Inside the clean space 616 is an aligner 622 that aligns the position of the orientation flat or notch of the substrate in a predetermined direction, two cleaning / drying devices 624 that clean the substrate after plating and rotate it at high speed and spin dry it, Pre-treatment of the substrate, in this example, spraying pure water toward the surface of the substrate (surface to be plated) to clean the substrate surface with pure water and also wet with pure water to improve hydrophilicity The pre-processing device 626 for performing is arranged at the four corners. Further, these processing devices, that is, the aligner 622, the cleaning / drying device 624, and the pre-processing device 626 are positioned substantially at the center, and the processing devices 622, 624, 626, the substrate detachment table 662, and the load / unload device 626. A first transfer robot 628 for transferring and transferring the substrate to and from the substrate cassette mounted on the load port 620 is disposed.

  On the other hand, in the plating space 614, in order from the partition plate 612 side, a stocker 664 for storing and temporarily placing the substrate holder 10, for example, an oxide film having a large electrical resistance on the surface of the seed layer formed on the surface of the substrate is made of sulfuric acid or hydrochloric acid. An activation processing device 666 for etching and removing with a chemical solution such as a first water-washing device 668a for washing the surface of the substrate with pure water, the plating device 670 according to the present invention for performing a plating process, a second water-washing device 668b, and after the plating treatment Blow devices 672 for draining the substrates are sequentially arranged. Two second transfer robots 674 a and 674 b are disposed along the rails 676 so as to be located on the sides of these devices. One second transfer robot 674a transfers the substrate holder 10 between the substrate attaching / detaching table 662 and the stocker 664, and the other second transfer robot 674b includes the stocker 664, the activation processing device 666, and the first water washing device. The substrate holder 10 is transferred among the 668a, the plating device 670, the second water washing device 668b, and the blow device 672.

  As shown in FIG. 11, the second transfer robots 674 a and 674 b include a body 678 extending in the vertical direction, and an arm 680 that can move up and down along the body 678 and can rotate about the axis. The arm 680 is provided with two substrate holder holding portions 682 arranged in parallel to detachably hold the substrate holder 10. Here, the substrate holder 10 is configured to hold the substrate W in a detachable manner with the surface (surface to be plated) exposed and the peripheral edge sealed.

  The stocker 664, the activation processing device 666, the rinsing devices 668a and 668b, and the plating device 670 hang the substrate holder 10 in the vertical direction by hooking the projecting portions 10a projecting outwardly provided at both ends of the substrate holder 10. It comes to support in the state. The activation processing apparatus 666 is provided with two activation processing tanks 683 for holding a chemical solution therein, and as shown in FIG. 11, the substrate holder 10 loaded with the substrate W is held in a vertical state. The arm 680 of the second transfer robot 674b is lowered, and if necessary, the substrate holder 10 is hooked on the upper end portion of the activation treatment tank 683 and supported by being suspended, whereby the substrate holder 10 together with the substrate W is activated. It is comprised so that an activation process may be performed by immersing in the internal chemical solution.

  Similarly, each of the rinsing apparatuses 668a and 668b includes two rinsing tanks 684a and 684b each holding pure water therein, and the plating apparatus 670 includes a plurality of the above-described plating tanks 2 each holding a plating solution therein. The substrate holder 10 and the substrate W are immersed in pure water in the water washing tanks 684a and 684b or a plating solution in the plating tank 2 so that the water washing process and the plating process are performed. The blower 672 lowers the arm 680 of the second transfer robot 674b that holds the substrate holder 10 on which the substrate W is mounted in a vertical state, and blows air or an inert gas onto the substrate W mounted on the substrate holder 10. Thus, the substrate W is blown.

  A series of bump plating processes by the plating apparatus configured as described above will be described with reference to FIG. First, as shown in FIG. 12A, a seed layer 500 as a power feeding layer is formed on the surface, and a resist 502 having a height H of 20 to 120 μm, for example, is applied to the entire surface of the seed layer 500. Thereafter, a substrate W provided with an opening 502a having a diameter D of about 20 to 200 μm, for example, at a predetermined position of the resist 502 is accommodated in a substrate cassette with its surface (surface to be plated) facing up. The cassette is mounted on the load / unload port 620.

  One substrate W is taken out from the substrate cassette mounted on the load / unload port 620 by the first transfer robot 628 and placed on the aligner 622 so that the positions of the orientation flat and the notch are aligned in a predetermined direction. The substrate W whose direction is adjusted by the aligner 622 is transferred to the pretreatment device 626 by the first transfer robot 628. The pretreatment apparatus 626 performs pretreatment using pure water as the pretreatment liquid (pretreatment with water washing), and the substrate W after the pretreatment is transported to the substrate attaching / detaching table 662 by the first transport robot 628.

  At this time, the substrate holder 10 previously stored in the vertical position in the stocker 664 is taken out by the second transfer robot 674a on the substrate attachment / detachment table 662, and is placed in parallel by rotating it 90 degrees. Is placed. Accordingly, the substrate that has been subjected to the above-described pretreatment (pretreatment with water washing) is attached to the substrate holder 10 placed on the substrate detachment table 662 with its peripheral edge sealed. Then, the two substrate holders 10 on which the substrate W is mounted are simultaneously gripped by the second transport robot 674a, lifted, transported to the stocker 664, and rotated 90 ° to bring the substrate holder 10 into a vertical state. Thereafter, the substrate holder 10 is lowered, and the two substrate holders 10 are suspended and held (temporarily placed) on the stocker 664. This is repeated sequentially, and the substrates W are sequentially mounted on the substrate holders 10 accommodated in the stocker 664, and are sequentially suspended and held (temporarily placed) at predetermined positions of the stocker 664.

  On the other hand, in the second transfer robot 674b, the two substrate holders 10 mounted with the substrate W and temporarily placed on the stocker 664 are simultaneously grasped and raised, and then transferred to the activation processing device 666 for activation processing. The substrate W is immersed in a chemical solution such as sulfuric acid or hydrochloric acid placed in a tank 683 to etch the oxide film having a large electric resistance on the surface of the seed layer, thereby exposing a clean metal surface. Further, the substrate holder 10 on which the substrate W is mounted is transported to the first water washing device 668a, and the surface of the substrate is washed with pure water put in the water washing tank 684a.

  The substrate holder 10 on which the substrate W that has been washed is mounted is transported to the plating apparatus 670 and suspended and supported by the plating tank 2 in a state where it is immersed in the plating solution Q in the plating tank 2 as shown in FIG. Thus, the plating process is performed on the surface to be plated W1 of the substrate W. Then, after a predetermined time has elapsed, the substrate holder 10 on which the substrate W is mounted is held again by the second transfer robot 674b and pulled up from the plating tank 2 to finish the plating process.

  And the substrate holder 10 is conveyed to the 2nd water-washing apparatus 668b, and it is immersed in the pure water put into this water-washing tank 684b, and the to-be-plated surface W1 of the board | substrate W is cleaned with pure water. Thereafter, the substrate holder 10 on which the substrate W is mounted is transported to the blower 672, where an inert gas or air is blown toward the substrate W to remove the plating solution or water droplets adhering to the substrate holder 10. . Thereafter, the substrate holder 10 on which the substrate W is mounted is returned to a predetermined position of the stocker 664 and held suspended.

  The second transfer robot 674b sequentially repeats the above operations, and returns the substrate holder 10 with the substrate W on which plating has been completed to a predetermined position of the stocker 664 and holds it suspended.

  On the other hand, in the second transfer robot 674a, two substrate holders 10 to which the substrate W after the plating process is mounted and returned to the stocker 664 are gripped simultaneously and placed on the substrate detachment table 662. Then, the first transfer robot 628 arranged in the clean space 616 takes out the substrate from the substrate holder 10 placed on the substrate attaching / detaching table 662 and transfers it to the cleaning / drying device 624. Then, the cleaning / drying apparatus 624 cleans the substrate W held horizontally with the surface facing upward with pure water and spin-drys the substrate W by rotating at high speed, and then loads the substrate W with the first transport robot 628. Return to the substrate cassette mounted on the unload port 620 to complete a series of plating processes. As a result, as shown in FIG. 12B, a substrate W on which a plating film 504 is grown in the opening 502a provided in the resist 502 is obtained.

  Then, the plated and spin-dried substrate is immersed in a solvent such as acetone having a temperature of 50 to 60 ° C., for example, and the resist 502 on the substrate W is peeled and removed as shown in FIG. Further, as shown in FIG. 12D, the unnecessary seed layer 500 exposed to the outside after plating is removed. Next, by reflowing the plating film 504 formed on the substrate W, bumps 506 rounded by surface tension are formed as shown in FIG. Further, the substrate W is annealed at a temperature of, for example, 100 ° C. or higher to remove the residual stress in the bumps 506.

It is a schematic sectional drawing which shows the plating apparatus concerning 1st embodiment of this application. It is a schematic sectional drawing which shows the plating apparatus concerning 2nd embodiment of this application. It is a schematic sectional drawing which shows the plating apparatus concerning 3rd embodiment of this application. It is a schematic sectional drawing which shows the plating apparatus concerning 4th embodiment of this application. It is a schematic sectional drawing which shows the plating apparatus concerning 5th embodiment of this application. 6A and 6B are plan views showing an example of the anode adjustment plate 36. FIG. FIGS. 7A and 7B are plan views showing other examples of the anode adjusting plate 36. FIGS. 8A and 8B are plan views showing other examples of the anode adjusting plate 36. FIGS. 9A and 9B are plan views showing other examples of the anode adjusting plate 36. 1 is an overall layout diagram of a plating apparatus configured using a plating apparatus according to the present invention. It is a figure which shows the state which hold | maintained the board | substrate W with the 2nd conveyance robot 674a (674b) used for the plating processing apparatus of FIG. It is a figure which shows the example which forms a bump (projection-like connection electrode) on the board | substrate W in order of a process. It is a figure which shows the prior art example of the plating apparatus of a dip system. It is a figure which shows the prior art example of the plating apparatus of a face down system. It is sectional drawing of the disk shaped anode 104 used with the plating apparatus shown in FIG.

Explanation of symbols

W substrate W1 Surface to be plated Q Plating solution 2 Plating tank 4 Anode 5 Adjustment plate 5a Hole 7 Plating power supply 8, 9 Conductor 10 Substrate holder 11 Anode holder 12 Overflow tank 18 Paddle 19 Plating solution supply port 20 Plating solution discharge port 23 Paddle drive Rod 29 Overflow weir 36 Anode adjusting plate 36a Opening hole 37 Anode adjusting plate 37a Opening hole 37b Fixed portion 38 Circulating pump 39 Temperature controller 40 Circulating filter 41 Pressure gauge 42 Flow meter 43 Filter 44 Functional membrane 50 Plating solution circulating means 500 Seed layer 502 Resist 502a Opening 504 Plating Film 506 Bump 610 Device Frame 612 Partition Plate 614 Plating Space 616 Clean Space 620 Load / Unload Port 624 Cleaning / Drying Device 628 First Transfer Robot 662 Base Plate detachment table 664 Stocker 666 Activation processing device 668a First water washing device 668b Second water washing device 670 Plating device 672 Blow device 674a, 674b Second transfer robot 676 Rail 678 Body 680 Arm 682 Substrate holder holding portion 683 Activation treatment tank 684a 684b Flush tank

Claims (6)

In a plating apparatus in which an anode in contact with the plating solution and the substrate are placed opposite to each other, and electroplating is performed on the surface to be plated of the substrate by energizing between the anode and the substrate,
A plating apparatus, wherein an anode adjusting plate having an opening hole whose area is smaller than an area in contact with the anode is installed on the front surface of the anode while being partially or entirely made of a dielectric material. The plating apparatus according to claim 1,
The plating apparatus, wherein the anode adjusting plate is attached to an anode holder that holds the anode in a plating tank. In the plating apparatus according to claim 1 or 2,
The plating apparatus, wherein the opening hole of the anode adjusting plate is similar to the outer shape of the anode. In the plating apparatus according to claim 1 or 2,
A plating apparatus, wherein a filter is attached to an opening hole of the anode adjusting plate. In the plating apparatus according to claim 1 or 2,
A plating apparatus, wherein a functional film that allows ions to pass through is attached to an opening hole of the anode adjusting plate. In the plating apparatus according to claim 1 or 2,
Plating characterized by mounting a circulation filter in the middle of a circulation pipe for discharging and circulating the plating solution supplied from the plating solution supply port provided in the plating vessel holding the plating solution into the plating solution discharge port. apparatus.

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