JP5270406B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP5270406B2 JP5270406B2 JP2009053838A JP2009053838A JP5270406B2 JP 5270406 B2 JP5270406 B2 JP 5270406B2 JP 2009053838 A JP2009053838 A JP 2009053838A JP 2009053838 A JP2009053838 A JP 2009053838A JP 5270406 B2 JP5270406 B2 JP 5270406B2
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- carbon nanotube
- solar cell
- silicon substrate
- front electrode
- electrode
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 59
- 239000002041 carbon nanotube Substances 0.000 claims description 54
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002238 carbon nanotube film Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000002079 double walled nanotube Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000002048 multi walled nanotube Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002109 single walled nanotube Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
12、32 背面電極
14、34 シリコン基板
16、36 ドープシリコン層
18、38 前面電極
20 金属層
22 第一電極
24 第二電極
26 反射防止層
140、340 シリコン基板の第二表面
142、342 凹槽
144、344 シリコン基板の第一表面
146、346 凹槽の内表面
182 前面電極の第一表面
184 前面電極の第二表面
186 カーボンナノチューブセグメント
188 カーボンナノチューブ
Claims (3)
- p型のシリコン基板と、背面電極と、n型のドープシリコン層と、前面電極と、を含む太陽電池において、
前記シリコン基板が第一表面と該第一表面に相対する第二表面を有し、該シリコン基板の第一表面に分離して設置された複数の凹槽が形成され、
前記背面電極が前記シリコン基板の第二表面に設置され、該第二表面とオーミック接触し、
前記ドープシリコン層が前記凹槽の内表面を含む前記第一表面上全体に設置され、
前記前面電極が前記シリコン基板の第一表面に設置され、
前記前面電極がカーボンナノチューブ構造体を含み、
前記カーボンナノチューブ構造体が、少なくとも一枚のカーボンナノチューブフィルムであり、単一のカーボンナノチューブフィルムは、配向して配列された複数のカーボンナノチューブを含み、該複数のカーボンナノチューブが同じ方向に沿って、均一的に配列されており、
前記前面電極は、前記凹槽の内表面と接触しないように前記凹槽の開口を被覆していることを特徴とする太陽電池。 - 前記カーボンナノチューブフィルムにおけるカーボンナノチューブの間に隙間があることを特徴とする、請求項1に記載の太陽電池。
- 前記太陽電池が複数の金属層を含み、該複数の金属層がそれぞれ前記シリコン基板の第一表面と前記前面電極の間に設置されることを特徴とする、請求項1または2に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810065797A CN101527327B (zh) | 2008-03-07 | 2008-03-07 | 太阳能电池 |
CN200810065797.8 | 2008-03-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009218595A JP2009218595A (ja) | 2009-09-24 |
JP5270406B2 true JP5270406B2 (ja) | 2013-08-21 |
Family
ID=41052356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009053838A Active JP5270406B2 (ja) | 2008-03-07 | 2009-03-06 | 太陽電池 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8796537B2 (ja) |
JP (1) | JP5270406B2 (ja) |
CN (1) | CN101527327B (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US9515218B2 (en) * | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US20130112256A1 (en) * | 2011-11-03 | 2013-05-09 | Young-June Yu | Vertical pillar structured photovoltaic devices with wavelength-selective mirrors |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
TWI394285B (zh) * | 2009-06-08 | 2013-04-21 | Univ Tatung | 光電轉換裝置及其製法 |
CN101789457A (zh) * | 2010-03-05 | 2010-07-28 | 上海农新投资管理咨询有限公司 | 一种太阳能电池 |
WO2012106002A1 (en) * | 2010-06-07 | 2012-08-09 | The Board Of Regents Of The University Of Taxas System | Multijunction hybrid solar cell with parallel connection and nanomaterial charge collecting interlayers |
WO2011156519A2 (en) * | 2010-06-08 | 2011-12-15 | Pacific Integrated Energy, Inc. | Optical antennas with enhanced fields and electron emission |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN101950764A (zh) * | 2010-07-30 | 2011-01-19 | 清华大学 | 一种带有酸溶液的碳纳米管-硅构成的太阳能电池 |
CN103035786B (zh) * | 2011-10-07 | 2015-07-01 | 清华大学 | 发光二极管的制备方法 |
CN103035784B (zh) * | 2011-10-07 | 2016-06-08 | 清华大学 | 发光二极管的制备方法 |
CN103035785B (zh) * | 2011-10-07 | 2015-11-25 | 清华大学 | 发光二极管的制备方法 |
CN103094374B (zh) * | 2011-10-27 | 2016-03-09 | 清华大学 | 太阳能电池 |
CN103094401B (zh) * | 2011-10-27 | 2015-07-29 | 清华大学 | 太阳能电池的制备方法 |
TWI506801B (zh) | 2011-12-09 | 2015-11-01 | Hon Hai Prec Ind Co Ltd | 太陽能電池組 |
CN103165719B (zh) | 2011-12-16 | 2016-04-13 | 清华大学 | 太阳能电池 |
CN103165742B (zh) * | 2011-12-16 | 2016-06-08 | 清华大学 | 太阳能电池的制备方法 |
CN103165690B (zh) * | 2011-12-16 | 2015-11-25 | 清华大学 | 太阳能电池 |
CN103187453B (zh) | 2011-12-29 | 2016-04-13 | 清华大学 | 太阳能电池 |
CN103187456B (zh) | 2011-12-29 | 2015-08-26 | 清华大学 | 太阳能电池 |
KR20130125114A (ko) * | 2012-05-08 | 2013-11-18 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
WO2014080510A1 (ja) * | 2012-11-26 | 2014-05-30 | 株式会社日立製作所 | 太陽電池およびその製造方法 |
US10249684B2 (en) * | 2012-12-17 | 2019-04-02 | Nantero, Inc. | Resistive change elements incorporating carbon based diode select devices |
US20140251420A1 (en) * | 2013-03-11 | 2014-09-11 | Tsmc Solar Ltd. | Transparent conductive oxide layer with localized electric field distribution and photovoltaic device thereof |
CN104868045B (zh) * | 2014-02-21 | 2017-10-24 | 清华大学 | 光电转换器件及其应用 |
CN108963078B (zh) * | 2017-05-17 | 2020-03-17 | 清华大学 | 光电转换装置 |
CN107733057A (zh) * | 2017-11-29 | 2018-02-23 | 李国强 | 一种移动通信终端的自动供电装置 |
CN112786714B (zh) * | 2019-11-08 | 2022-11-22 | 清华大学 | 光电探测器 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57130483A (en) | 1981-02-05 | 1982-08-12 | Semiconductor Energy Lab Co Ltd | Mis type photoelectric transducer |
JPS5923570A (ja) | 1982-07-30 | 1984-02-07 | Hitachi Ltd | 太陽電池 |
JPH0795602B2 (ja) * | 1989-12-01 | 1995-10-11 | 三菱電機株式会社 | 太陽電池及びその製造方法 |
JPH0521821A (ja) | 1991-07-16 | 1993-01-29 | Sharp Corp | 光電変換装置 |
JP2837296B2 (ja) * | 1991-10-17 | 1998-12-14 | シャープ株式会社 | 太陽電池 |
JPH05243594A (ja) | 1992-03-02 | 1993-09-21 | Sumitomo Electric Ind Ltd | 太陽電池 |
JPH05335614A (ja) | 1992-06-03 | 1993-12-17 | Idemitsu Kosan Co Ltd | 光電変換素子 |
JPH0677511A (ja) | 1992-08-27 | 1994-03-18 | Matsushita Electric Ind Co Ltd | 太陽電池及びその製造方法 |
US5890125A (en) * | 1997-07-16 | 1999-03-30 | Dolby Laboratories Licensing Corporation | Method and apparatus for encoding and decoding multiple audio channels at low bit rates using adaptive selection of encoding method |
JPH11103080A (ja) | 1997-09-26 | 1999-04-13 | Aisin Seiki Co Ltd | 太陽電池 |
JP2002520818A (ja) | 1998-07-02 | 2002-07-09 | アストロパワー | シリコン薄膜,集積化された太陽電池,モジュール,及びその製造方法 |
DE69831860T2 (de) * | 1998-07-04 | 2006-07-20 | Au Optronics Corp. | Elektrode zur verwendung in elektrooptischen bauelementen |
US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
TWI292583B (en) * | 2000-08-22 | 2008-01-11 | Harvard College | Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices |
NL1016779C2 (nl) * | 2000-12-02 | 2002-06-04 | Cornelis Johannes Maria V Rijn | Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs. |
WO2002052654A1 (fr) * | 2000-12-26 | 2002-07-04 | Kabushiki Kaisha Hayashibara Seibutsu Kagaku Kenkyujo | Cellule solaire |
US7355114B2 (en) * | 2001-03-19 | 2008-04-08 | Shin-Etsu Handotai Co., Ltd. | Solar cell and its manufacturing method |
JP2003179241A (ja) | 2001-12-10 | 2003-06-27 | Kyocera Corp | 薄膜太陽電池 |
JP2003209270A (ja) | 2002-01-15 | 2003-07-25 | Toyota Central Res & Dev Lab Inc | 炭素系光電素子およびその製造方法 |
US7522040B2 (en) * | 2004-04-20 | 2009-04-21 | Nanomix, Inc. | Remotely communicating, battery-powered nanostructure sensor devices |
JP4170701B2 (ja) | 2002-07-31 | 2008-10-22 | 信越半導体株式会社 | 太陽電池及びその製造方法 |
WO2004068548A2 (en) | 2003-01-21 | 2004-08-12 | Rensselaer Polytechnic Institute | Three dimensional radiation conversion semiconductor devices |
JP4162516B2 (ja) * | 2003-03-14 | 2008-10-08 | 三洋電機株式会社 | 光起電力装置 |
US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
JP2005050669A (ja) | 2003-07-28 | 2005-02-24 | Tdk Corp | 電極、及び、それを用いた電気化学素子 |
TWI241029B (en) | 2003-12-05 | 2005-10-01 | Hon Hai Prec Ind Co Ltd | Dye sensitized solar cell electrode and solar cell having same |
US20050268963A1 (en) * | 2004-02-24 | 2005-12-08 | David Jordan | Process for manufacturing photovoltaic cells |
JP2005327965A (ja) | 2004-05-17 | 2005-11-24 | Shachihata Inc | 光起電力装置 |
US8075863B2 (en) * | 2004-05-26 | 2011-12-13 | Massachusetts Institute Of Technology | Methods and devices for growth and/or assembly of nanostructures |
EP1779442B1 (en) * | 2004-06-18 | 2019-08-07 | Samsung Electronics Co., Ltd. | Nanostructured materials and photovoltaic devices including nanostructured materials |
US8080487B2 (en) * | 2004-09-20 | 2011-12-20 | Lockheed Martin Corporation | Ballistic fabrics with improved antiballistic properties |
US20070240757A1 (en) * | 2004-10-15 | 2007-10-18 | The Trustees Of Boston College | Solar cells using arrays of optical rectennas |
CN101437663B (zh) | 2004-11-09 | 2013-06-19 | 得克萨斯大学体系董事会 | 纳米纤维带和板以及加捻和无捻纳米纤维纱线的制造和应用 |
JP2006171336A (ja) | 2004-12-15 | 2006-06-29 | Takiron Co Ltd | 画像表示用透明電極体および画像表示装置 |
WO2007061428A2 (en) * | 2004-12-27 | 2007-05-31 | The Regents Of The University Of California | Components and devices formed using nanoscale materials and methods of production |
JP2006210780A (ja) | 2005-01-31 | 2006-08-10 | Kyocera Chemical Corp | 多層型光電変換装置 |
TWI251354B (en) | 2005-02-02 | 2006-03-11 | Ind Tech Res Inst | Solar energy power module with carbon nano-tube |
JP4481869B2 (ja) | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
CN100539206C (zh) | 2005-09-23 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 可以充分吸收更广泛波长太阳光的太阳能电池结构 |
WO2007037343A1 (ja) | 2005-09-29 | 2007-04-05 | Nu Eco Engineering Co., Ltd. | カーボンナノ構造体を用いたダイオード及び光起電力素子 |
JP5242009B2 (ja) | 2005-09-29 | 2013-07-24 | 国立大学法人名古屋大学 | カーボンナノウォールを用いた光起電力素子 |
JP4720426B2 (ja) | 2005-10-19 | 2011-07-13 | 住友金属鉱山株式会社 | カーボンナノチューブを用いた太陽電池 |
JP2007126338A (ja) | 2005-11-07 | 2007-05-24 | Ulvac Japan Ltd | カーボンナノ材料及びその作製方法、並びに金属微粒子担持カーボンナノ材料及びその作製方法 |
US20070119496A1 (en) * | 2005-11-30 | 2007-05-31 | Massachusetts Institute Of Technology | Photovoltaic cell |
CN100462301C (zh) | 2005-12-09 | 2009-02-18 | 清华大学 | 一种碳纳米管阵列的制备方法 |
CN100500556C (zh) * | 2005-12-16 | 2009-06-17 | 清华大学 | 碳纳米管丝及其制作方法 |
WO2008054845A2 (en) * | 2006-03-23 | 2008-05-08 | Solexant Corporation | Photovoltaic device containing nanoparticle sensitized carbon nanotubes |
US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
KR20070113763A (ko) * | 2006-05-26 | 2007-11-29 | 삼성전자주식회사 | 탄소나노튜브 패턴 형성방법 및 그에 의해 수득된탄소나노튜브 패턴 |
US20070277874A1 (en) * | 2006-05-31 | 2007-12-06 | David Francis Dawson-Elli | Thin film photovoltaic structure |
US8866007B2 (en) * | 2006-06-07 | 2014-10-21 | California Institute Of Technology | Plasmonic photovoltaics |
CN101086939B (zh) * | 2006-06-09 | 2010-05-12 | 清华大学 | 场发射元件及其制备方法 |
TWI320026B (en) | 2006-06-30 | 2010-02-01 | Field emission componet and method for making same | |
KR100813243B1 (ko) * | 2006-07-04 | 2008-03-13 | 삼성에스디아이 주식회사 | 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법 |
CN100530744C (zh) | 2006-07-06 | 2009-08-19 | 西安交通大学 | 一种有机太阳电池的结构及其该结构制备的有机太阳电池 |
CN100405617C (zh) | 2006-12-29 | 2008-07-23 | 清华大学 | 基于碳纳米管薄膜的太阳能电池及其制备方法 |
JP2009117463A (ja) | 2007-11-02 | 2009-05-28 | Kaneka Corp | 薄膜光電変換装置 |
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