JP5252283B2 - Semiconductor device manufacturing method and apparatus therefor - Google Patents

Description

  The present invention relates to a method of manufacturing a semiconductor device by attaching a substrate to be processed such as a silicon wafer to a support substrate and processing the substrate to be processed, and for that purpose, the substrate to be processed is attached to the support substrate and laminated. The present invention relates to an apparatus for manufacturing a body.

  In recent years, after a substrate to be processed such as a semiconductor wafer is attached to a hard support substrate, a surface opposite to the attachment surface of the substrate to be processed has been processed. For example, in Patent Document 1, a substrate to be processed is attached to glass as a support substrate via a photothermal conversion layer and an adhesive, the substrate to be processed is ground extremely thin, and the substrate to be processed is damaged after grinding. A technique for peeling the supporting substrate without any problem is described.

  This technique will be described with reference to FIGS. As shown in FIG. 13, a photothermal conversion layer 2 is formed on a support substrate 1 made of circular glass by applying a mixed solution consisting of a light absorber such as carbon black, a thermally decomposable resin, and a solvent with a spin coater and drying. To do. Further, a UV curable adhesive is applied to the back surface of the substrate 3 to be processed made of a silicon wafer by a spin coater to form a photocurable adhesive layer 4. Next, as shown in FIG. 14, after the photothermal conversion layer 2 of the support substrate 1 and the adhesive layer 4 of the substrate to be processed 3 are bonded to each other, the ultraviolet light 5 is irradiated from the support substrate 1 side, The layer 4 is cured to bond the support substrate 1 and the substrate 3 to be processed.

  And as shown in FIG. 15, the to-be-processed substrate 3 fixed to the support substrate 1 is ground and thinned. After the grinding is finished, as shown in FIG. 16, YAG laser light 6 is irradiated from the support substrate 1 side. Thereby, the to-be-processed board | substrate 3a thinned without the photothermal conversion layer 2b decomposing | disassembling and damaging a board | substrate can be peeled from the support substrate 1 (FIG. 17). Finally, as shown in FIG. 18, an adhesive layer 7 is attached to the adhesive layer 4 remaining on the back surface of the substrate to be processed 3a, and the adhesive tape 7 is peeled off to remove the adhesive layer from the substrate to be processed 3a. 4 can be removed (FIG. 19).

In this technique, the support substrate 1 must have a larger outer shape than the substrate to be processed 3. If the outer shape of the support substrate 1 is equal to or less than that of the substrate to be processed 3, the adhesive layer 4 comes into contact with the support substrate 1 without passing through the photothermal conversion layer 2, and the support substrate 1 is removed from the substrate to be processed 3. This is because peeling may not be possible.
JP 2004-64040 A

  However, in this technique, as shown in FIG. 13, the photocurable adhesive layer 4 formed on the surface of the substrate to be processed 3 also wraps around the side surface of the substrate 3 to be processed. When the adhesive layer 4 is peeled off with the tape 7, a part 4a of the adhesive layer may remain on the surface of the substrate 3 to be processed starting from the side surface (FIG. 20). As described above, the remaining portion 4a of the adhesive layer that cannot be peeled off with the adhesive tape 7 occurs irregularly, and thus there is a problem that the work of peeling off manually is required.

  Therefore, in view of the above problems, the present invention bonds the substrate to be processed to the support substrate via the photothermal conversion layer and the adhesive layer, and sets the surface of the substrate to be processed on the opposite side of the bonded surface. To provide a method of manufacturing a semiconductor device and an apparatus therefor that can prevent a part of the adhesive layer from remaining on the substrate to be processed even if the adhesive layer is peeled off from the substrate to be processed. With the goal.

  In order to achieve the above object, the present invention includes, as one aspect, a step of forming a photocurable adhesive layer on one surface of a substrate to be processed, and a photothermal conversion layer on one surface of a support substrate. A step of covering the surface of the light-to-heat conversion layer on the surface of the light-to-heat conversion layer via the light-curing adhesive layer and irradiating light to cure the light-curing adhesive layer. In this laminate, a step of processing the surface of the substrate to be processed opposite to the surface to be bonded to the support substrate (hereinafter also referred to as “processed surface”), and the processed substrate to be processed In the manufacturing method of the semiconductor device including the step of separating the photocurable adhesive layer from the photocurable adhesive layer, in the step of curing the photocurable adhesive layer, of the photocurable adhesive layer, from the substrate to be processed The exposed portion is maintained in an uncured state.

  It is preferable that the method further includes a step of removing a portion of the uncured photocurable adhesive layer. The portion of the uncured photocurable adhesive layer is preferably removed with a high-pressure water stream. Moreover, it is preferable to remove the portion of the uncured photocurable adhesive layer by brush cleaning. In the step of curing the photocurable adhesive layer, it is preferable that light irradiation to a portion of the photocurable adhesive layer exposed from the substrate to be processed is shielded.

  According to another aspect of the present invention, a substrate to be processed having a photocurable adhesive layer formed on one surface and a support substrate having a photothermal conversion layer formed on one surface are combined with the photocurable adhesive. Light for curing the photocurable adhesive layer on a portion of the photocurable adhesive layer exposed from the substrate to be processed in an apparatus for producing a laminate by bonding through a layer and the photothermal conversion layer It is characterized by having means for shielding so as not to hit.

  It is preferable to further include a means for removing the uncured photocurable adhesive layer. As a means for removing such an uncured photocurable adhesive layer, a means for jetting a high-pressure water flow is preferable. A brush is preferable as a means for removing the uncured photocurable adhesive layer.

  As described above, by maintaining the portion of the photocurable adhesive layer formed on the substrate to be processed exposed from the substrate to be processed in an uncured state, it can be easily removed from the substrate to be processed. After that, it is possible to prevent a part of the photocurable adhesive layer from remaining on the substrate to be processed.

  Hereinafter, an embodiment of a method of manufacturing a semiconductor device according to the present invention will be described with reference to the accompanying drawings. FIGS. 1-8 is sectional drawing which shows typically the laminated structure for demonstrating this embodiment. FIG. 9 and FIG. 10 are cross-sectional views schematically showing one embodiment of a spin coater device used in this embodiment, and show the device when a high-pressure water flow is used. 11 and 12 are cross-sectional views schematically showing another embodiment of the spin coater device, and show the device when a cleaning brush is used.

  As shown in FIG. 1, first, the photothermal conversion layer 2 is formed on one surface of the support substrate 1. The support substrate 1 is not particularly limited as long as it has a property of transmitting light, and glass, acrylic resin, and the like are preferable. The support substrate 1 is not particularly limited as long as it has a surface whose outer shape is larger than the surface of the substrate 3 to be described later, and has a shape such as a circle, an ellipse, a square, a rectangle, and a regular polygon. preferable. As such a support substrate 1, for example, a circular Pyrex (registered trademark) glass having a diameter of 152 mm and a thickness of 0.7 mm can be used.

  As the photothermal conversion layer 2, if it absorbs light such as laser light, it is converted into thermal energy to increase the temperature of the layer, and if it has a property of being thermally decomposed when the temperature reaches a predetermined temperature, There is no particular limitation. As such a photothermal conversion layer 2, a mixture of a light absorber and a thermally decomposable resin is preferable. Examples of the light absorber include carbon black, graphite powder, fine metal powder such as iron, aluminum, copper, nickel, cobalt, manganese, chromium, zinc, tellurium, metal oxide powder such as black titanium oxide, or aromatic Dyes or pigments such as aromatic diamino metal complexes, aliphatic diamine metal complexes, aromatic dithiol metal complexes, mercaptophenol metal complexes, squarylium compounds, cyanine dyes, methine dyes, naphthoquinone dyes, anthraquinone dyes Can be used. Examples of the thermally decomposable resin include gelatin, cellulose, cellulose ester (for example, cellulose acetate, nitrocellulose), polyphenol, polyvinyl butyral, polyvinyl acetal, polycarbonate, polyurethane, polyester, polyorthoester, polyacetal, polyvinyl alcohol, Polyvinylpyrrolidone, a copolymer of vinylidene chloride and acrylonitrile, poly (meth) acrylate, polyvinyl chloride, silicone resin and / or block copolymer containing a polyurethane unit can be used alone or in admixture of two or more. .

  The photothermal conversion layer 2 can be formed, for example, by applying a mixed solution composed of the light absorber, the thermally decomposable resin, and the solvent on the surface of the support substrate 1 and drying it. As the solvent, propylene glycol methyl ether acetate and the like are preferable. As a coating method, spin coating, die coating, roll coating, or the like can be adopted. The thickness of the photothermal conversion layer 2 is preferably 0.5 to 2.0 μm. By setting the thickness within this range, the support substrate 1 and the adhesive layer 4 can be satisfactorily separated by thermal decomposition, and light irradiated from the support substrate 1 side can be sufficiently transmitted.

  The photothermal conversion layer 2 preferably has a thermal decomposition temperature in the range of 100 to 200 ° C. This temperature range is, for example, the temperature of the chemical solution used in the plating process when the electroless nickel plating process is performed as a process on the surface of the substrate to be processed 3 opposite to the bonding surface with the support substrate 1 (usually 80 Higher). For this reason, in the process of a plating process, since the thermal decomposition of the photothermal conversion layer 2 does not arise, the contamination to a plating solution can be prevented. Therefore, the drying temperature at the time of forming the photothermal conversion layer 2 is a temperature sufficiently lower than the thermal decomposition temperature. For example, it is preferable to dry at 150-200 degreeC with dryers, such as oven.

  Further, as shown in FIG. 1, a photocurable adhesive layer 4 is formed on one surface of the substrate 3 to be processed. The substrate 3 to be processed is a substrate obtained by the method of the present invention. Examples of the substrate to be processed 3 include semiconductor wafers such as silicon and gallium arsenide (GaAs), crystal wafers, sapphire, and glass. The shape, size, and the like of the substrate 3 to be processed depend on the intended use of the substrate to be processed, but a shape such as a circle, an ellipse, a square, a rectangle, and a regular polygon is preferable. In the case of a circle, for example, the diameter is preferably 100 mm or less for a 5-inch wafer and 151 mm or less for a 6-inch wafer. Further, the thickness is preferably in the range of 500 to 700 μm regardless of the shape. If it is 500 μm or less, the strength of the wafer alone will be low, and if it is 700 μm or more, it will not be possible to enter the cassette for storing the wafer, or it will be impossible to insert the robot hand between the wafers stored in the cassette. is there. For example, a circular silicon wafer having a diameter of 150 mm and a thickness of 625 μm can be used. Here, when the substrate is extremely thinned, a wafer having a thickness of 500 to 700 μm is used as the substrate 3 to be processed, and the processing on the surface opposite to the bonding surface with the support substrate 1 is performed, for example, the thickness of the wafer The process of reducing As a process of reducing the thickness, the surface of the wafer may be ground or etched. Alternatively, grinding and etching may be combined. Note that the support substrate 1 and the substrate to be processed 3 do not have to be similar shapes, and may have arbitrary shapes.

  The photocurable adhesive forming the photocurable adhesive layer 4 can fix the substrate to be processed 3 and the photothermal conversion layer 2 and can be peeled from the substrate to be processed 3. It is not particularly limited. The “light” here includes not only visible light but also ultraviolet rays, infrared rays, electron beams, and the like. Examples of such a photocurable adhesive include ultraviolet (UV) or electron beam curable adhesive based on acrylic, epoxy, and the like. Among these, a UV curable adhesive is particularly preferable.

  The photocurable adhesive layer 4 can be formed by applying a photocurable adhesive on the substrate 3 to be processed. As an application method, spin coating or the like can be employed. The thickness of the photocurable adhesive layer 4 is preferably in the range of 25 to 100 μm. When the thickness of the adhesive layer is 25 μm or less, when the support substrate 1 and the substrate 3 to be processed are bonded together, an adhesive gap is generated on the bonding surface. Further, if it is 100 μm or more, the adhesive protrudes from the side surface of the substrate 3 to be processed, and further, the adhesive wraps around the surface side of the substrate to be processed, that is, the processing surface. It is because it becomes difficult to peel off.

Next, as shown in FIG. 2, the photothermal conversion layer 2 formed on the support substrate 1 and the photocurable adhesive layer 4 formed on the substrate 3 to be processed are bonded to each other. At this time, it is preferable that the supporting substrate 1 and the substrate to be processed 3 are bonded to each other while removing bubbles in the photocurable adhesive layer 4 in a reduced pressure chamber (not shown). At this time, as shown in FIG. 2, the light 5 is irradiated from the surface on the support substrate 1 side to cure the photocurable adhesive, and the substrate 3 to be processed is fixed to the support substrate 1. A light shielding plate 20 is arranged so as to prevent the light 5 from hitting the portion exposed from the support substrate 1, thereby shielding light irradiation to the exposed portion. Various materials can be used for the light shielding plate 20 in accordance with the type of the light 5. For example, when shielding ultraviolet rays, it is preferable to use aluminum, stainless steel, or fluorine resin. The shape of the light shielding plate 20 is preferably a plate-shaped one having a hole having the same shape as the substrate 3 to be processed, or a ring-shaped one having the same shape as the substrate 3 to be processed. When the substrate to be processed has a positioning part (orientation flat or notch on the wafer), the inside of the light shielding plate 20 has the same shape, and the position of the light shielding plate 20 is also adjusted so as to cover the positioning part. Good. When ultraviolet is used as the light 5, the UV intensity is preferably in the range of 100 to 200 mJ / cm ² .

  And as shown in FIG. 3, the part exposed from the to-be-processed substrate 3 is removed among the uncured photocurable adhesive layers 4b. At this time, it is preferable that the portion 2a of the photothermal conversion layer 2 exposed from the substrate to be processed 3 is also removed at the same time. For this removal, it is preferable to use an alkaline aqueous solution. As alkaline aqueous solution, sodium hydroxide aqueous solution, ammonia water, tetramethylammonium hydroxide (TMAH) aqueous solution, etc. can be used. In particular, when the treated substrate obtained in the present invention is used for a semiconductor device, it is preferable to use a TMAH aqueous solution. The aqueous TMAH solution is generally used as a resist developer, and can eliminate the influence of mobile ions such as sodium and heavy metal contamination. The TMAH concentration in the TMAH aqueous solution is preferably 1 to 3%.

  The alkaline aqueous solution can be applied to the uncured adhesive layer 4b and the exposed portion 2a of the photothermal conversion layer by a method such as spin coating. FIG. 9 and FIG. 10 show an embodiment of a spin coater apparatus that removes these exposed portions by spin coating. As shown in FIGS. 9 and 10, this spin coater apparatus includes a spin chuck 9 that holds a laminated body in a state where a part of the adhesive layer 4 is exposed from the substrate to be processed 3 described above in a chamber 8. The chemical solution application nozzle 10 for applying the alkaline aqueous solution 11 to one end portion of the laminate and the high-pressure cleaning nozzle 12 for injecting the high-pressure cleaning water 13 to another end portion of the laminate are provided.

  The spin chuck 9 is configured to rotate the held laminate in the horizontal direction. The number of rotations is preferably in the range of 50 to 100 rpm at the time of chemical solution application and high-pressure washing, and 2000 to 4000 rpm at the time of spin drying. For example, the chemical solution application nozzle 10 preferably drops the alkaline aqueous solution 11 at a flow rate of 30 to 60 cc / min, although it varies depending on the scale of the laminate and the exposed portion and the type and concentration of the alkaline aqueous solution. Moreover, it is preferable that the high pressure washing nozzle 12 injects the high pressure washing water 13 at a pressure of 5 to 10 MPa and a flow rate of 0.5 to 1.0 SLM. SLM is a unit converted to a volume flow rate (L / min) at 0 ° C. and 0.1013 MPa.

  In the spin coater having such a configuration, first, while the laminate is rotated at, for example, 60 rpm by the spin chuck 9, an alkaline aqueous solution 11 (for example, a TMAH aqueous solution having a concentration of 2.38%, hereinafter referred to as a TMAH aqueous solution) is supplied from the chemical solution application nozzle 10. Is dripped. Thereby, TMAH aqueous solution 11 is apply | coated to the periphery of a laminated body, and the exposed adhesive bond layer and photothermal conversion layer melt | dissolve. Next, the high pressure cleaning water 13 is sprayed from the high pressure cleaning nozzle 12 at 10 MPa and 1 SLM, for example, while the laminate is continuously rotated. Thus, the adhesive layer and the photothermal conversion layer dissolved by the TMAH aqueous solution 11 are washed and removed from the support substrate. Although it varies depending on the type and concentration of the alkaline aqueous solution 11, the time interval from the dropping of the alkaline aqueous solution 11 to the injection of the high-pressure washing water 13 is preferably 10 to 60 seconds, more preferably 15 to 30 seconds. preferable. In the case of the scale of the exemplified laminate and the alkaline aqueous solution, if the time interval is about 30 seconds, the exposed adhesive layer and the photothermal conversion layer can be sufficiently removed.

  In the embodiment shown in FIGS. 9 and 10, the chemical solution application nozzle 10 and the high-pressure cleaning nozzle 12 are arranged in one spin coater, and the dissolution with the alkaline aqueous solution 11 and the cleaning with the high-pressure cleaning water 13 are performed. Of course, the chemical coating nozzle and the high-pressure washing nozzle are placed in different spin coater devices, and after the dissolution with the alkaline aqueous solution is finished, the laminate is transferred to another spin coater device. Thus, cleaning with high-pressure cleaning water may be performed.

  The light shielding plate 20 shields the portion of the photocurable adhesive layer 4 that is not exposed from the substrate to be processed 3, and the uncured adhesive is bonded between the substrate to be processed 3 and the photothermal conversion layer 2. Even if the agent layer 4b remains, there is usually no problem as long as the substrate 3 to be processed is fixed to the photothermal conversion layer 2. However, when a problem arises due to such an uncured adhesive layer 4b remaining, the entire surface of the photocurable adhesive 4 is again applied from the support substrate 1 side after performing the above-described high-pressure water flow or brush cleaning. Can be cured by irradiation with light 5.

  Next, as shown in FIG. 4, the processing surface opposite to the bonding surface of the substrate to be processed 3 fixed on the support substrate 1 is processed. As the processing of the processing surface, for example, processing for reducing the thickness of the substrate 3 to be processed is performed. As a process of reducing the thickness of the substrate 3 to be processed, there are grinding, etching, or a combination thereof. In the case of grinding, for example, it is preferable to perform grinding by rotating a grinding wheel. It is preferable to use KOH or TMAH as an etching solution. The process of reducing the thickness of the substrate to be processed 3a is performed until the substrate has a desired thickness. The thickness of the substrate 3a to be processed is preferably 150 μm or less, more preferably 50 μm or less, and further preferably 25 μm or less. On the other hand, the lower limit of the thickness is preferably 10 μm or more. Further, the treatment of the treatment surface is not limited to reducing the thickness, and wet treatment can be performed. Examples of wet processing include etching and plating. It is preferable to use KOH or TMAH as an etching solution. As the plating solution, an electroless nickel plating solution or a displacement gold plating solution is preferably used.

  After the processing of the processing surface such as grinding or wet processing is completed, light 6 such as laser light is irradiated from the surface on the support substrate 1 side as shown in FIG. Thereby, since the photothermal conversion layer 2b is thermally decomposed as described above, it can be peeled from the support substrate 1 without damaging the substrate 3a to be processed as shown in FIG. The light is not particularly limited as long as it can be absorbed by the light-to-heat conversion layer 2b and converted into heat, and the light-to-heat conversion layer 2b can be thermally decomposed. For example, it is preferable to irradiate a YAG laser having a wavelength of 1064 nm. The laser beam needs to scan the entire region of the substrate 3a to be processed.

  Since the cured adhesive layer 4a and possibly the uncured adhesive layer 4b remain on the substrate to be processed 3a separated from the support substrate 1, as shown in FIG. 7, the adhesive layers 4a, 4b After affixing the pressure-sensitive adhesive tape 7 to the surface, the pressure-sensitive adhesive tape 7 is peeled off, whereby the adhesive layers 4a and 4b can be peeled from the substrate 3a to be processed as shown in FIG. An adhesive tape is not specifically limited, For example, the peeling tape for back wrap tapes etc. can be used.

  As described above, it is possible to prevent part of the adhesive layer 4 from remaining on the surface of the substrate to be processed 3a that has been ground or wet processed. The substrate 3a thus obtained can be used as, for example, a power semiconductor, particularly a vertical power semiconductor substrate. In order to obtain a vertical power semiconductor, electrodes are formed on both surfaces of the substrate 3a to be processed so that a current flows from the back surface to the front surface. For this purpose, in FIG. 1, after forming one electrode on one surface (front surface) of the substrate 3 to be processed, a photothermal conversion layer 4 is formed on this electrode, and in FIG. The other electrode can be formed on the surface (back surface) obtained by grinding or wet processing the processing substrate 3. For example, in an insulated gate bipolar transistor (IGBT), a collector electrode is formed on the back surface and an emitter electrode is formed on the front surface. Therefore, in this case, the emitter region and the insulated gate structure are formed in advance on the front surface of the substrate 3 to be processed, and the collector region and the electrode are formed on the ground or wet-treated surface (back surface). Can be manufactured.

  The method for manufacturing a semiconductor device according to the present invention is not limited to the above-described embodiment, and other embodiments can be adopted. For example, in the step of removing the exposed adhesive layer 4 shown in FIG. 3, as shown in FIGS. 9 and 10, the chemical coating nozzle 10 and the high-pressure cleaning nozzle 12 are installed in the spin coater. As shown in FIGS. 11 and 12, the chemical solution application nozzle 10 and the cleaning brush 14 can be arranged in one spin coater device. The cleaning brush 14 is movable, and as shown in FIG. 11, while the alkaline aqueous solution 11 is being discharged from the chemical solution application nozzle 10, the cleaning brush 14 is waiting above the laminate, and the application of the alkaline aqueous solution 11 is completed. Then, after a predetermined time interval has passed, the cleaning brush 14 descends to come into contact with the peripheral edge of the laminate, and the adhesive layer and the photothermal conversion layer dissolved by the alkaline aqueous solution are cleaned and removed from the support substrate 1. can do.

It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically the laminated structure for describing one Embodiment of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing which shows typically one Embodiment of the removal apparatus which concerns on this invention. It is sectional drawing which shows typically one Embodiment of the removal apparatus which concerns on this invention. It is sectional drawing which shows typically another Embodiment of the removal apparatus which concerns on this invention. It is sectional drawing which shows typically another Embodiment of the removal apparatus which concerns on this invention. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is sectional drawing which shows typically the laminated structure for demonstrating the conventional manufacturing method. It is a top view which shows typically the surface of the to-be-processed substrate obtained by the conventional manufacturing method of FIGS.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Support substrate 2 Photothermal conversion layer 3 Processed substrate 4 Adhesive layer 5 Ultraviolet light 6 Laser light 7 Stripping tape 8 Spin coater chamber 9 Spin chuck 10 Chemical solution coating nozzle 11 Alkaline aqueous solution 12 High pressure cleaning nozzle 13 High pressure cleaning water 14 Cleaning brush 20 Shading plate

Claims (7)

Forming a photocurable adhesive layer on one surface of the substrate to be treated;
Forming a photothermal conversion layer on one surface of the support substrate;
Covering the substrate to be treated on the surface of the light-to-heat conversion layer via the photocurable adhesive layer, and irradiating light to cure the photocurable adhesive layer to obtain a laminate; and
In this laminate, a step of processing the surface of the substrate to be processed opposite to the bonding surface with the support substrate;
In the method of manufacturing a semiconductor device, including the step of separating the processed substrate from the photocurable adhesive layer,
In the step of curing the photocurable adhesive layer, a portion of the photocurable adhesive layer exposed from the substrate to be processed is maintained in an uncured state.   The manufacturing method according to claim 1, further comprising a step of removing a portion of the uncured photocurable adhesive layer with a high-pressure water stream.   The manufacturing method according to claim 1, further comprising a step of removing a portion of the uncured photocurable adhesive layer by brush cleaning.   The manufacturing method according to claim 1, wherein the step of curing the photocurable adhesive layer includes shielding light irradiation on a portion of the photocurable adhesive layer exposed from the substrate to be processed. . A substrate to be processed having a photocurable adhesive layer formed on one surface and a support substrate having a photothermal conversion layer formed on one surface via the photocurable adhesive layer and the photothermal conversion layer. An apparatus for manufacturing a laminate by bonding,
An apparatus comprising means for shielding a portion of the photocurable adhesive layer exposed from the substrate to be processed from being exposed to light for curing the photocurable adhesive layer.   6. The apparatus of claim 5, further comprising means for injecting a high pressure water stream to remove the uncured photocurable adhesive layer.   6. The apparatus of claim 5, further comprising a brush for removing the uncured photocurable adhesive layer.

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