JP2015067463A - Functional film pattern protection method and substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a functional film pattern protection method and a substrate processing device capable of sufficiently protecting a functional pattern formed on a substrate without damaging the same during a cutting treatment on the substrate.SOLUTION: A functional film pattern protection method comprises the steps of: forming a functional film pattern F at a predetermined position on a substrate surface B1; forming a surface treatment film X which covers the substrate surface B1 and the functional film pattern F; forming an etching-resistant protection film R on the surface treatment film X formed; cutting a substrate B by performing an etching treatment on a first region A on the surface B1 of the substrate B, the first region A being an area to be cut on the substrate B and the surface of the surface B1 being exposed after removing the protection film R and the surface treatment film X formed on the first region A; and washing and removing the surface treatment film X formed on second regions C, which are regions on the substrate B except the region A.

Description

  Embodiments described herein relate generally to a functional film pattern protection method and a substrate processing apparatus.

  For example, when processing a substrate, a substrate processing apparatus that cuts the substrate into a predetermined size and shape is used. Various substrates can be considered as a substrate to be cut, and for example, there are also substrates that are formed of mere glass and other substrates called so-called tempered glass. There are various types of tempered glass. For example, when the surface of the glass is chemically treated, the portion thereof is altered, and the strength of the entire glass is increased. Such tempered glass is widely used, for example, as a cover glass used for a display device of a mobile phone.

  When cutting the substrate, for example, a method using a cutting wheel can be mentioned. However, this method is often not suitable for cutting the tempered glass described above.

  Therefore, when cutting the tempered glass, for example, a resist film (protective film) having etching resistance is applied to the surface of the tempered glass, and the glass surface is exposed so as to have a desired shape through exposure and development processes. Alternatively, a method of exposing the substrate by irradiating the protective film with laser light and removing the protective film so as to have a desired shape is also conceivable. Thereafter, a method of etching the exposed glass surface and cutting the substrate is employed.

JP 2009-292699 A

  However, the invention disclosed in Patent Document 1 does not give consideration to the following points.

  That is, functional film patterns such as electrodes and circuit patterns are often formed on the substrate. As described above, when cutting the substrate, it is naturally considered not to cut the functional film pattern. Thus, sufficient attention is paid to the protection of the functional film pattern when the substrate is cut.

  On the other hand, after the substrate is cut, the protective film must be peeled off, but the functional film pattern may be damaged in the peeling process. That is, for example, if treatment using an alkaline solution is performed to peel (remove) the protective film, the alkaline solution erodes the functional film pattern, and the originally provided function cannot be exhibited. This is incomplete as a product, and it is impossible to expect an improvement in manufacturing yield.

  The present invention has been made to solve the above problems, and the object of the present invention is to enable sufficient protection without damaging the functional film pattern formed on the substrate in the flow of the substrate cutting process. And providing a functional film pattern protecting method and a substrate processing apparatus.

  The functional film pattern protection method according to the embodiment includes a step of forming a functional film pattern at a predetermined position on the substrate surface, a step of forming a base treatment film covering the substrate surface and the functional film pattern, and a step of forming the base treatment film. A step of forming a protective film having etching resistance thereon, and a first surface on the surface of the substrate exposed by removing the protective film and the base treatment film formed in the first region to be cut out of the substrate. And a step of cutting the substrate by etching the region, and a step of cleaning and removing the base treatment film formed in the second region of the substrate excluding the first region.

  The substrate processing apparatus according to the embodiment includes a functional film pattern forming unit that forms a functional film pattern at a predetermined position on the substrate surface, a first film forming unit that forms a base treatment film that covers the substrate surface and the functional film pattern, A second film forming portion for forming a protective film having etching resistance on the formed base treatment film, and a first cutting scheduled on the surface of the substrate exposed by removing the protective film and the base treatment film. An etching unit that performs an etching process on the region and cuts the substrate; and a base treatment film removal unit that cleans and removes the base treatment film formed in the second region of the substrate excluding the first region; Is provided.

  According to the present invention, it is possible to provide a functional film pattern protection method and a substrate processing apparatus that enable sufficient protection without damaging the functional film pattern formed on the substrate in the flow of the substrate cutting process. it can.

It is a block diagram which shows the whole structure of the substrate processing apparatus which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment. It is process sectional drawing which shows the flow of the processing method of the board | substrate which concerns on embodiment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a block diagram illustrating an overall configuration of a substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 includes a functional film pattern forming unit 11, a first film forming unit 12, a second film forming unit 13, a light source 14, an etching unit 15, and a base treatment film peeling unit 16. Is done.

  In addition, in the substrate processing apparatus 1 shown in FIG. 1, only the structure required in order to demonstrate embodiment in this invention is extracted and shown. Therefore, for example, the substrate to be processed between the above-described parts is transported by a transport device such as a belt conveyor. The transport apparatus is provided in the substrate processing apparatus 1, but is not shown in FIG. For example, a control unit for controlling the operation of each unit is also provided, but it is not shown in the same manner.

  The detailed functions and functions of the above-described units related to the substrate processing apparatus 1 will be described as appropriate when the substrate processing method is described below.

  2 to 13 are process cross-sectional views illustrating the flow of the substrate processing method according to the embodiment. Here, the processing of the substrate means performing processing for cutting the substrate into a desired size and shape and dividing it into pieces. The “substrate” may be any of a glass substrate containing tempered glass, a laminated silicon substrate (silicon wafer), a ceramic substrate, a metal substrate, a resin substrate, or the like. The material which comprises is not ask | required.

  FIG. 2 shows a substrate B to be processed. The substrate B is, for example, tempered glass, and the chemical treatment is performed on the surfaces B1 and B2 of the substrate B. Specifically, for example, a stress generation layer (strengthening layer) is formed to a depth of several tens of μm from the surfaces B1 and B2 of the substrate B.

  Next, the functional film pattern F is formed at a predetermined position on the surface B1 by the functional film pattern forming unit 11 on the surface B1 of the substrate B. FIG. 3 shows a state in which the functional film pattern F is formed on the surface B1.

  Here, the expression “surface of the substrate B” includes not only the case where the glass itself is exposed but also the case where the functional film pattern F is formed on the surface B1 as shown in FIG.

  Further, the base film X is formed on the surface B1 of the substrate B by the first film forming unit 12. FIG. 4 shows a state in which the base treatment film X is formed on the surface B1. The base treatment film X is formed by a film forming method such as spin coating or ink jet coating.

  3 and the subsequent drawings, the functional film pattern F and the base treatment film X are formed only on the surface B1, but the functional film pattern F and the base treatment film X are formed only on the surface B2. However, it does not exclude being formed on either of the surfaces B1 and B2. Further, here, for convenience of explanation, an example in which only one layer of the base treatment film X is formed on the surface B1 of the substrate B will be described, but the base treatment film X may be formed not only in a single layer but also in a plurality of layers.

  The material of the base treatment film X and the characteristics of the material will be described in detail in a cleaning process described later, but films having various characteristics can be selected. For example, it may have any property such as water solubility, thermoplasticity, photoplasticity, dissolution in an organic solvent, or a combination of these properties.

  On the other hand, the base treatment film X needs to have a property to withstand, for example, an etching solution used in cutting the substrate B. In addition, in the process flow for separating the substrate B after cutting, water or the like is used so as not to damage the functional film pattern F when removing the protective film and the base treatment film X described below. It is required that the material used for removing the material has a property that can be easily removed.

  After the base treatment film X is formed on the surface B1 of the substrate B, the protective film R is formed on the base treatment film X by the second film forming unit 13 as shown in FIG. The protective film R is used to prevent a region other than the first region A, which is a cutting region, from being eroded by the etching process during the etching process performed when the substrate is separated into pieces.

  However, in order to expose the first region A on the surface B1 of the substrate B, it is necessary to remove the protective film R. In the step of removing the protective film R, for example, it is conceivable to receive laser light from the light source 14. Further, as will be described later, the protective film R may be removed without using the laser light emitted from the light source 14.

  When laser light is used, the substrate B is singulated so that it is subjected to an etching process. Therefore, it is preferable to use one having excellent laser light absorption and etching resistance. Is done.

  Specifically, the protective film R is a so-called resist film. However, any material having the above laser light absorption and etching resistance can serve as the protective film R in this embodiment. Therefore, for example, it is not necessary to use an expensive resist material. For example, a material in which a laser absorbent is contained in an etching-resistant protective paint may be used as the protective film R.

  Moreover, the thickness of the protective film R to be applied is, for example, 100 μm. On the other hand, the base treatment film X formed between the protective film R and the surface B1 of the substrate B is, for example, 1 μm. However, the thickness of the base treatment film X and the protective film R can be arbitrarily set.

  Here, regarding the formation region of the base treatment film X, for example, in the substrate B shown in FIG. 4 or FIG. 5, the surface of the substrate B including the functional film pattern F formed at a predetermined position on the surface B1. , Formed in the entire region. By forming the base treatment film X in this way, the functional film pattern F is completely covered with the base treatment film X. Therefore, the base film X can sufficiently protect the functional film pattern F even in future processing.

  On the other hand, if it is possible to sufficiently protect the functional film pattern F, it is considered that it is not necessary to form the base treatment film X as shown in FIG. 4 or FIG. 6 and 7 illustrate a modification regarding the formation of the base treatment film X. FIG.

  FIG. 6 shows a state in which the base treatment film X is formed only in the region including the functional film pattern F and the periphery thereof. That is, the base treatment film X is not formed in the first region A, which is a region scheduled to be cut on the surface B1 of the substrate B in advance. A protective film R is formed on the base treatment film X. In this case, since the base processing film X is not formed in the first region A, if the protective film R is formed on the base processing film X, the first processing region X is not formed in the first region A. As a result, the protective film R is formed. By performing the formation process of the base treatment film X and the protective film R, when the substrate B is cut, the process of removing the base treatment film X in the first region A as long as the protective film R is removed. It can be omitted and more rapid processing can be performed.

  On the other hand, for the functional film pattern F to be protected, since the base treatment film X is formed including the periphery of the functional film pattern F, as will be described later, Alternatively, it is possible to avoid damaging the functional film pattern F when the process of removing the protective film R is performed.

  FIG. 7 shows another example relating to the formation of the base treatment film X. That is, FIG. 6 shows an example in which the base treatment film X is not formed in the first region A that is to be cut from the substrate B. FIG. 7 shows an example in which a second base treatment film X2 having a property different from that of the functional film pattern F and the first base treatment film X1 formed therearound is formed in the first region A. Yes.

  That is, since the region where the second base treatment film X2 is formed is a region to be cut, it is necessary to expose the first region A on the substrate B to be a cutting region to facilitate cutting. is there. On the other hand, since the second base treatment film X2 is not formed in the region (second region) C in which the functional film pattern F is formed, like the first base treatment film X1 described so far. The function of protecting the functional film pattern F may not be provided. As described above, the functional film pattern F can be sufficiently protected and the cut surface can be easily formed by forming a plurality of base treatment films X by selecting an appropriate material according to the use on the substrate B on which the base treatment film X is formed. Can be exposed to.

  FIG. 8 shows a step of removing the protective film R by irradiating a laser beam from the light source 14 after the base treatment film X and the protective film R are formed on the surface B1 of the substrate B. The laser beam irradiated here is a laser beam irradiated for removing the protective film R, and is a so-called laser beam for processing. The laser beam for processing has a wavelength that is mostly absorbed by the protective film R and hardly absorbed by the substrate B. By having such a property, it is possible to avoid a problem that, for example, a crack is generated in the substrate B when the protective film R is removed.

  The laser beam for processing is applied to the first region A where the surface B1a, which is the cut portion of the substrate B, is finally exposed. Since the laser beam for processing is irradiated to expose the surface B1a as described above, the protective film R is irradiated and removed until a predetermined thickness is reached.

  When the processing laser beam is applied to the protective film R, the protective film R is gradually processed (removed) sequentially from the surface of the protective film R. At this time, since the energy of the processing laser beam is consumed for removing the protective film R, it is considered that the substrate B is hardly affected. In particular, when the protective film R is also formed in the first region A serving as the cutting region as shown in FIG. 6 described above, the use of such a processing laser beam is required.

  FIG. 9 is a process diagram showing a state in which the protective film R is removed by laser light irradiation and the base treatment film X is exposed. Since the base treatment film X is very thin as described above, it is not very effective to use laser light to remove the base treatment film X. In addition, the thickness of the base treatment film X may cause an adverse effect such that the laser light passes through the base treatment film X and, for example, cracks occur in the substrate B. On the other hand, for example, if it can be removed by washing with water, the first region A necessary for cutting can be secured without adversely affecting the substrate B or the like.

  Therefore, in the embodiment of the present invention, after the removal of the protective film R in the first region A is completed, the base treatment film X is removed by washing away. Here, the base treatment film X for protecting the functional film pattern F and the base treatment film X formed and removed in the first region A have the same properties. For this reason, it may be considered that if the processing for removing the base processing film X formed in the first region A is performed, the base processing film X for protecting the functional film pattern F may be affected.

  However, even if the base processing film X formed in the first region A is removed, the base processing film X formed so as to cover the functional film pattern F is not significantly affected. Since the base processing film X covers the functional film pattern F and is formed on the surface but is in contact with the first region A to be removed, the surface processing film X is very small and is formed very thin. This is because even if a removal process using water or the like is performed to remove the base treatment film X in the region A, the water or the like is unlikely to penetrate.

  After that, when the processing advances and finally the protective film R is removed and the base treatment film X is removed, the surface B1a of the first region A is exposed as shown in FIG.

  As the processing laser light used for removing the protective film R, for example, a laser light having a wavelength that is difficult to be absorbed by the substrate B while having the property of removing the protective film R is preferably used. With such a laser beam, the possibility of heating the substrate B even when the laser beam is irradiated in the process of removing the protective film R can be suppressed low, and cracks and the like are prevented from occurring in the substrate B. be able to.

  Further, the method of removing the protective film R so as to expose the first region A, which is a cutting region, on the surface B1 is not limited to the method using the laser beam described above. Naturally, the first region A may be exposed by a method that does not use laser light, for example, a processing method that uses etching or the like.

  When the protective film R and the base treatment film X are removed and the surface B1a of the first region A is exposed, an etching process is performed in the etching unit 15 to cut the substrate B. FIG. 11 is a diagram showing the middle of the cutting, and FIG. 12 shows a state in which the cutting is completed and one substrate B is divided into a plurality of substrates BA and BB.

  Here, as shown in FIG. 10, in the first region A, the surface B1a of the substrate B is exposed. Accordingly, only this portion is etched, and the substrate B is gradually cut as the processing proceeds (see FIG. 11). Of the protective film R formed on the substrate B, in the second region C, which is a region other than the first region A, the protective film R remains formed. It will not be etched.

  In the etching process in the etching unit 15 in the embodiment of the present invention, wet etching is performed. As the supply of the etching solution, the substrate B (see FIG. 10) with the surface B1 exposed may be immersed in the etching solution, or the etching solution may be applied to the substrate B. Further, a plurality of sheets may be processed simultaneously by batch processing, or a single wafer processing may be performed.

  In addition, when the process which applies etching liquid to the board | substrate B as an etching process is performed, an etching liquid may be supplied, rotating the board | substrate B, or an etching liquid may be supplied, conveying the board | substrate B, The supply method can be arbitrarily selected.

  Further, in FIG. 11, for the sake of convenience, it is shown as if anisotropic etching (dry etching) is performed, but this is merely shown as such for the sake of drawing. That is, as described above, in the embodiment of the present invention, since wet etching is basically employed as the etching process, isotropic etching is performed.

  Thus far, the substrate B has been cut into a desired size and shape (see FIG. 12). Thereafter, the protective film R and the base treatment film X corresponding to the second region C are removed from the separated substrates BA and BB, respectively.

  In the embodiment of the present invention, the protective film R and the base treatment film X are simultaneously removed from the singulated state as shown in FIG. For that purpose, the protective film R is removed first, and then the base treatment film X is not removed. Instead, the base treatment film X itself is removed, so that it is formed on the base treatment film X. Even the protective film R is removed together. For example, if the base treatment film X is peeled off by performing a stripping process using water, as described above, even if the protective film R remains on the base treatment film X, the whole base treatment film X is protected. R can also be removed.

  As will be described in detail below, for example, when the base treatment film X has a characteristic of being water-soluble, as shown in FIG. 12, the substrate is separated into pieces with the protective film R and the base treatment film X remaining. If B is immersed in a treatment tank such as a water tank constituting the base treatment film peeling portion 16, the protective film R and the base treatment film X can be removed together. By adopting such a process, the step of removing the protective film R while sufficiently protecting the functional film pattern F can be eliminated. This leads to an overall reduction in the time required for the substrate manufacturing process.

  Therefore, the removal of the base treatment film X will be considered. As described above, the base treatment film X has a role of protecting the functional film pattern F formed on the substrate B. Therefore, it is necessary to avoid damaging the functional film pattern F that is protected when the base film X is peeled off. Therefore, it is necessary to perform an appropriate peeling process according to the material of the base film X.

  That is, in order for the base treatment film X to protect the functional film pattern F, first, the functional film pattern F is not damaged when the base treatment film X is formed so as to cover the functional film pattern F. Thus, the material of the base treatment film X is selected in relation to the functional film pattern F. In addition, a peeling process that does not damage the functional film pattern F when the base treatment film X is further peeled is required. Then, when the base treatment film F is peeled after the substrate B is cut and separated into pieces, the substrate treatment film peeling unit 16 performs, for example, a cleaning process.

  As described above, the cleaning method and the type of apparatus to be used vary depending on the characteristics and material of the base treatment film X. Hereinafter, materials that can be used as the base treatment film X will be described, and the characteristics of the base treatment film X, the configuration of the base treatment film peeling portion 16 necessary for each material, and the treatment method will be described.

  First, the base treatment film X has a property of being water-soluble. In this case, as the base treatment film X1, for example, materials such as starch paste, polyvinyl alcohol (PVA) adhesive, and polyvinyl pyrrolidone (PVP) adhesive are conceivable. When these materials are used as the base treatment film X1, the temperature of water to be used is various (the temperature such as cold water, hot water, hot water, etc. is selected depending on the material used for the base treatment film X1). Can be washed away. In addition, the “water” in the case of washing away with water (washing) is water of various temperatures such as “cold water”, “hot water”, or “hot water” as described above, or in the form of shower or mist. Any form of water, such as spraying, is included.

  Therefore, when these materials are used as the base treatment film X1, a water washing apparatus is used as the base treatment film peeling portion 16. As the water washing apparatus, for example, one or both of a shower and a treatment tank can be used. Here, the processing tank is a tank (bath) in which the substrate B is immersed, for example, to peel off the base treatment film X.

  Therefore, when the base treatment film X1 is peeled off, a treatment tank in which water having a suitable temperature is stored is used. In addition, the use of a cleaning brush is effective as long as it does not damage the functional film pattern F as required. Alternatively, use of a water washing device using ultrasonic waves is also conceivable. Furthermore, a surfactant, an organic solvent, a liquid quality adjusting agent, or the like may be mixed with water or the like when washing.

  In addition, from the viewpoint of protecting the functional film pattern F and avoiding imparting damage, a cleaning process using water is preferably employed. This is because the possibility that the functional film pattern F is damaged by the cleaning process using water is considered to be low.

  Next, there may be a case where the base treatment film X has a characteristic such as thermoplasticity. In this case, as the base treatment film X2, for example, vinyl acetate, polyvinyl chloride (PVC), cyanoakrylate, ethylene vinyl acetate resin (EVA), nylon 11, 12, polyvinyl alcohol (PVA) adhesives, polyvinylpyrrolidone (PVP) adhesives, or materials included in paraffin or glue systems are conceivable. When these materials are used as the base treatment film X2, the base treatment film X2 can be cleaned after being heated. Alternatively, it is possible to use hot water from the beginning or wash using steam.

  Therefore, a heating device or a hot water cleaning device is used as the base treatment film peeling portion 16. It is also conceivable that a steam device is used. As this hot water cleaning apparatus, for example, one or both of a shower and a treatment tank can be used.

  In the case where the base treatment film X has the property of photoplasticity, not only a cleaning device but also a device for irradiating the base treatment film X3 with light rays is used as a device constituting the base treatment film peeling unit 16. . In this case, examples of the type of light to be irradiated include an ultraviolet lamp and laser light.

  Note that the laser beam used here is different from the processing laser beam used when the protective film R described above is removed, and is used for peeling the base treatment film X3 having a thermoplastic property. Laser light. However, a laser beam used for removing the protective film R may be used as a laser beam used for peeling the base treatment film X3.

  Furthermore, it may be considered that the base treatment film X has a property of being dissolved in an organic solvent. In this case, different organic solvents are used for the base treatment film X4. For example, when the base treatment film X4 is a vinyl acetate-based or polyvinyl acetate-based resin, methanol, ethyl acetate, acetone, chloroform, cliclene, benzene, Strip using an organic solvent such as dioxane. For example, when the base treatment film X4 is a polyvinyl chloride (PVC) adhesive, it is peeled off using an organic solvent such as methyl ethyl ketone (MEK), tetrahydrofuran (tetrahydrofuran), or methyl acetate. For example, in the case where the base treatment film X5 is an ethylene vinyl acetate resin (EVA) type, it is peeled off using an organic solvent such as cyclohexane, toluene, or benzene.

  In addition, materials such as chloroprene rubber (polychloroprene, CR), nitrile rubber (nitrile rubber, NBR), polyimide adhesive, polystyrene resin (polystyrene), or nitrocellulose adhesive are used as the base treatment film X4. can do. And the organic solvent according to these employ | adopted materials is selected, and peeling of the base-treatment film | membrane X4 is performed.

  When the base treatment film X4 is peeled off using an organic solvent, a chemical treatment apparatus is used as the base treatment film peeling portion 16. Moreover, as a chemical | medical solution processing apparatus, the use of one or both of a shower and a processing tank is possible, for example. In addition, the chemical | medical solution process according to the kind of organic solvent used is required. An organic solvent recovery device, such as a vapor recovery device or a liquid recovery device, may also be required. Explosion-proof devices are used as needed.

  In this way, by removing the base treatment film X in the base treatment film peeling portion 16, as shown in FIG. 13, the functional film pattern F that has been protected by the base treatment film X so far is not damaged. A substrate that remains on the substrate B as it is and can perform its intended function is formed.

  As described above, a functional film pattern protection method and a substrate processing apparatus capable of sufficient protection without damaging the functional film pattern formed on the substrate in the flow of substrate cutting and singulation processing are provided. can do.

  That is, the functional film pattern in which the liquid used for the process erodes the functional film pattern formed on the substrate when the protective film used when performing processing such as etching (cutting processing) is removed. If the film is peeled off in accordance with the removal of the protective film or the base treatment film, or is damaged in the process, the utility value of the substrate having the functional film pattern is reduced, and the product is manufactured. Yield is also high.

  For this reason, it is possible to avoid damaging the functional film pattern during a series of cutting and singulation processes by covering the functional film pattern using the base treatment film. For example, even if an alkali treatment is performed on the removal of the protective film, the functional film pattern is protected by the base treatment film, so that damage to the functional film pattern can be reduced in the protective film removal process. This also reduces the production yield of the product.

  Furthermore, also when performing the process of removing (peeling) the base treatment film that protects the functional film pattern, by using the above-described method, particularly preferably using water, the base treatment film is peeled off and the functional film pattern is formed on the substrate. Even if the film is exposed to water, it is water that is used for the peeling treatment, so that the functional film pattern is not damaged. By dealing with the removal of the base treatment film in this way, sufficient protection can be performed without damaging the functional film pattern even in this treatment step.

  In addition, the example in which the protective film is also removed from the second region together with the base treatment film X has been described so far. However, the protective film which is a resist film may be removed as before, and a process of removing the base treatment film thereon may be performed. In this case, it does not matter which method is adopted as a method for removing the resist film. When the protective film is not a resist film, a chemical or the like corresponding to the material of the protective film is used for removing the protective film.

  Furthermore, in the above-described embodiment of the present invention, the description has been made on the assumption that the base treatment film and the protective film are formed as different films. However, for example, a case where the material itself that can be used as the base treatment film has etching resistance is considered. For example, the above-mentioned polyvinyl alcohol (PVA) adhesive has acid resistance. In this way, the base treatment film and the protective film do not need to be made of completely different materials, and the polyvinyl alcohol (PVA) adhesive can also have the functions of the base treatment film and the protective film. In this case, by applying only one layer of the polyvinyl alcohol (PVA) adhesive, the substrate has the same function as that of forming the base treatment film and the protective film.

  In this way, it is possible to peel off by cleaning, and by selecting a material having etching resistance that can withstand the etching process, the process of forming and removing the film can be greatly simplified. . Therefore, not only the number of processes can be reduced, but also the necessary apparatus itself can be reduced, which contributes to simplification of the apparatus configuration, shortening of the tact time, and the like.

  In addition to the case where only a single layer is selected by selecting a material that can be cleaned in this manner and having etching resistance, the same material (here, the base treatment film and the protective film are used as described below). However, it is conceivable to change the respective characteristics even when the material Y is described for convenience).

  That is, for example, the material Y1 employed as the base treatment film can be dissolved in cold water having a water temperature of about 20 degrees, and is naturally dissolved in water having a higher temperature. On the other hand, the material Y2 employed as the protective film can be dissolved in hot water having a water temperature of 90 ° C. or higher, but is not dissolved in water at a lower temperature.

  In the case where the base treatment film and the protective film are made of materials having such characteristics, the region to be cut is irradiated with laser light. The laser beam removes the protective film, and the base treatment film is exposed in the portion where the protective film is removed. Since the base treatment film is made of the material Y1 that can be removed with cold water as described above, the base treatment film in the region can be peeled off by washing with cold water. On the other hand, even if this cleaning process is performed, the material Y2 selected as the protective film does not dissolve in water having a temperature lower than 90 ° C., and therefore remains as it is. In this state, an etching process is performed. For example, if it is immersed in a hydrofluoric acid aqueous solution (hydrofluoric acid water, the main component is water) at a temperature sufficiently lower than 90 degrees, the region of the protective film is not dissolved and has etching resistance and remains without being removed. Since the surface irradiated with the laser beam exposes the surface of the substrate, the etching process proceeds. After that, when the predetermined etching process is completed, if cleaning is performed using hot water of 90 ° C. or higher, or steam of the temperature or higher, the base treatment film, the protective film, and the region irradiated with the laser beam are all the same. Thus, a desired substrate that has been cleaned, safely cut, and singulated can be produced.

  As described above, when selecting the base treatment film so that the base treatment film and the protective film have the same material (material Y), specifically, for example, a polyvinyl alcohol (PVA) adhesive is selected. Is possible. When a PVA adhesive is selected as the base treatment film, the protective film is removed and the base treatment film is appropriately controlled by controlling the temperature of water used for peeling in accordance with the degree of saponification and the molecular weight of the PVA adhesive. Can be appropriately performed.

  Furthermore, so far, as a substrate processing apparatus and a substrate processing method, the processing target has been described as a substrate. However, the processing method described above can be applied not only to substrate processing but also to cutting and drilling of various materials such as a silicon substrate necessary for a semiconductor device. That is, for example, the present invention can also be applied to TSV (Through Silicon Via) that generates a through hole having conductivity in a laminated silicon substrate (silicon wafer).

  Although an embodiment of the present invention has been described, this embodiment is presented as an example and is not intended to limit the scope of the invention. This embodiment can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. This embodiment and its modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 11 Functional film pattern formation part 12 1st film formation part 13 2nd film formation part 14 Light source 15 Etching part 16 Ground treatment film removal part

Claims (20)

Forming a functional film pattern at a predetermined position on the substrate surface;
Forming a base treatment film covering the substrate surface and the functional film pattern;
Forming a protective film having etching resistance on the formed base treatment film;
Etching is performed on the first region on the surface of the substrate exposed by removing the protective film and the base treatment film formed in the first region to be cut out of the substrate. Cutting the substrate;
Cleaning and removing the base treatment film formed in the second region of the substrate excluding the first region;
A functional film pattern protecting method comprising:   2. The functional film pattern protection according to claim 1, wherein the base treatment film is formed in a region including the functional film pattern and its periphery so as to cover the functional film pattern formed on the substrate. Method.   3. The functional film according to claim 2, wherein when the base treatment film is formed in a region including the functional film pattern and the periphery thereof, the base treatment film is not formed in the first region. Pattern protection method.   The first base treatment film formed in the functional film pattern and its surrounding region and the second base treatment film formed in the first region are made of different materials. The functional film pattern protecting method according to claim 1 or 2.   5. The functional film pattern protecting method according to claim 4, wherein the second base treatment film is removed by cleaning when the substrate surface is exposed. 6.   6. The functional film pattern protecting method according to claim 1, wherein the base treatment film has etching resistance.   When the said base treatment film is water-soluble, in the process of wash | cleaning the said base treatment film, the water washing apparatus provided with at least one of a shower or a processing tank is utilized. The functional film pattern protecting method according to any one of 6.   When the base treatment film has a thermoplastic property, in the step of cleaning the base treatment film, a hot water cleaning device including at least one of a shower and a processing tank is used. The functional film pattern protecting method according to any one of claims 1 to 6.   9. The method according to claim 8, further comprising a step of heating the base treatment film before the step of cleaning the base treatment film when the base treatment film has a thermoplastic property. Functional film pattern protection method.   In the case where the base treatment film has a photo-plastic property, in the step of cleaning the base treatment film, a cleaning device including at least one of a shower or a treatment tank and an irradiation device for irradiating light are used. 7. The functional film pattern protecting method according to claim 1, wherein the functional film pattern is protected.   In the case where the base treatment film has a property of being dissolved in an organic solvent, a cleaning device including at least one of a shower and a treatment tank is used in the step of cleaning the base treatment film. The method for protecting a functional film pattern according to claim 1.   The functional film pattern protecting method according to claim 11, further comprising a step of recovering the organic solvent to be used after the step of cleaning the base treatment film.   13. The method according to claim 1, wherein the step of removing the protective film and the step of removing the base treatment film are performed together according to the properties of the base treatment film. Functional film pattern protection method. A functional film pattern forming portion for forming a functional film pattern at a predetermined position on the substrate surface;
A first film forming portion for forming a base treatment film covering the substrate surface and the functional film pattern;
A second film forming portion for forming a protective film having etching resistance on the formed base treatment film;
An etching unit for performing an etching process on the first region to be cut on the surface of the substrate exposed by removing the protective film and the base treatment film and cutting the substrate;
A base treatment film removing unit that cleans and removes the base treatment film formed in the second region of the substrate excluding the first region;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 14, wherein when the base treatment film is water-soluble, the base treatment film removing unit includes a water rinsing device including at least one of a shower and a treatment tank. .   The said base treatment film removal part is provided with the washing | cleaning apparatus of the hot water provided with at least one of a shower or a processing tank, when the said base treatment film is provided with the thermoplastic property. 14. The substrate processing apparatus according to 14.   The substrate processing apparatus according to claim 16, further comprising a heating device for heating the base treatment film when the base treatment film has a thermoplastic property.   When the base treatment film has a photo-plastic property, the base treatment film removing unit includes a shower or a cleaning device including at least one of a processing tank and an irradiation device for irradiating light. The substrate processing apparatus according to claim 14.   The said base treatment film removal part is provided with the washing | cleaning apparatus provided with at least one of a shower or a processing tank, when the said base treatment film is provided with the property to melt | dissolve in an organic solvent. The board | substrate processing apparatus of description. The substrate processing apparatus according to claim 19, wherein the base treatment film removing unit further includes a recovery device suitable for the organic solvent to be used.

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