JP5131732B2 - 色素増感太陽電池用の色素吸着半導体電極の製造方法 - Google Patents
色素増感太陽電池用の色素吸着半導体電極の製造方法 Download PDFInfo
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- JP5131732B2 JP5131732B2 JP2007093227A JP2007093227A JP5131732B2 JP 5131732 B2 JP5131732 B2 JP 5131732B2 JP 2007093227 A JP2007093227 A JP 2007093227A JP 2007093227 A JP2007093227 A JP 2007093227A JP 5131732 B2 JP5131732 B2 JP 5131732B2
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- 239000000243 solution Substances 0.000 claims description 21
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
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- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
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- IDECLHFPSHYUMV-UHFFFAOYSA-N 2-(4-hexadecylpyridin-2-yl)-4-methylpyridine ruthenium Chemical compound [Ru].CCCCCCCCCCCCCCCCC1=CC=NC(C=2N=CC=C(C)C=2)=C1 IDECLHFPSHYUMV-UHFFFAOYSA-N 0.000 description 1
- UUIMDJFBHNDZOW-UHFFFAOYSA-N 2-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=CC=N1 UUIMDJFBHNDZOW-UHFFFAOYSA-N 0.000 description 1
- HQHIWHRZWSFFGP-UHFFFAOYSA-N 4-methyl-2-(4-methylpyridin-2-yl)pyridine;ruthenium Chemical compound [Ru].CC1=CC=NC(C=2N=CC=C(C)C=2)=C1 HQHIWHRZWSFFGP-UHFFFAOYSA-N 0.000 description 1
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- ZLQVEYRYUBUSGC-UHFFFAOYSA-M [Ru+2].N1=C(C=C(C=C1)C(=O)[O-])C1=NC=CC(=C1)C(=O)O.N1=C(C=C(C=C1)C(=O)O)C1=NC=CC(=C1)C(=O)O.[N-]=C=S Chemical compound [Ru+2].N1=C(C=C(C=C1)C(=O)[O-])C1=NC=CC(=C1)C(=O)O.N1=C(C=C(C=C1)C(=O)O)C1=NC=CC(=C1)C(=O)O.[N-]=C=S ZLQVEYRYUBUSGC-UHFFFAOYSA-M 0.000 description 1
- MIYXSYMNNQDJKN-UHFFFAOYSA-N [Ru].C(CCCCC)C1=CC(=NC=C1)C1=NC=CC(=C1)CCCCCC Chemical compound [Ru].C(CCCCC)C1=CC(=NC=C1)C1=NC=CC(=C1)CCCCCC MIYXSYMNNQDJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 150000001767 cationic compounds Chemical class 0.000 description 1
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- SEACYXSIPDVVMV-UHFFFAOYSA-L eosin Y Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C([O-])=C(Br)C=C21 SEACYXSIPDVVMV-UHFFFAOYSA-L 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 229910001411 inorganic cation Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002540 isothiocyanates Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
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- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 239000011148 porous material Substances 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 description 1
- FHNRXCZVLIJCGL-UHFFFAOYSA-N ruthenium(2+) tetrabutylazanium Chemical compound [Ru+2].CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC FHNRXCZVLIJCGL-UHFFFAOYSA-N 0.000 description 1
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- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Description
封止材の材質については特に限定するものではない。
30mm×25mm×3mmの透明導電膜付ガラス基板として日本板ガラス製のFTO(フッ素ドープ酸化スズ)膜付ガラス基板(商品名:Low‐Eガラス)を使用した。
次に、導電性膜付き基板の導電性膜上に、酸化チタン膜を形成した。酸化チタンは、市販の酸化チタンペースト(ソラロニクス社製Dペースト)を使用した。これを、導電性膜付き基板の導電性膜上に、スキージ印刷の手法で20mm×5mmの範囲に塗工し、乾燥後500℃で焼成して厚み15μmの酸化チタン層を形成した金属酸化物層を設けた導電層付基板を得た。
実施例1〜5において、炭酸ガス圧力と温度を表1に示すとおりとした他は同様にして色素吸着半導体電極を得て、次にこれを使用して色素増感太陽電池を得た。
従来の含浸法により色素吸着半導体電極を得た。この含浸法は、実施例1と同じ色素溶液に前記金属酸化物層を設けた導電層付基板を、炭酸ガスを導入することなく、室温、定圧で72時間浸漬させて行った。色素の吸着した色素吸着半導体電極を取り出し、これを乾燥して、色素吸着半導体電極とした。次に、これを使用して実施例1〜5と同様にして色素増感太陽電池を得た。
Claims (4)
- 色素増感太陽電池の負極部材としての色素吸着半導体電極を製造する方法において、色素が少なくとも1つのカルボキシル基又はカルボキシレート構造をもつ分子構造を有し、色素を半導体に吸着させるに際し、色素を溶媒に溶解させた溶液と炭酸ガスとの混合溶液中で吸着させたものであり、その炭酸ガスの圧力が1〜5Mpaの範囲であり、温度が40〜60℃の範囲であることを特徴とする色素増感太陽電池用の色素吸着半導体電極の製造方法。
- 溶媒がメタノール、エタノール、プロパノール及びブタノールから選ばれる少なくとも1種を含むアルコール溶液であることを特徴とする請求項1記載の色素増感太陽電池用の色素吸着半導体電極の製造方法。
- 請求項1又は2のいずれかに記載の製造方法により製造された色素吸着半導体電極。
- 請求項3記載の色素吸着半導体電極を用いて構成したことを特徴とする色素増感太陽電池。
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JP2007093227A JP5131732B2 (ja) | 2007-03-30 | 2007-03-30 | 色素増感太陽電池用の色素吸着半導体電極の製造方法 |
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JP2007093227A JP5131732B2 (ja) | 2007-03-30 | 2007-03-30 | 色素増感太陽電池用の色素吸着半導体電極の製造方法 |
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JP2008251422A JP2008251422A (ja) | 2008-10-16 |
JP5131732B2 true JP5131732B2 (ja) | 2013-01-30 |
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CN101916669B (zh) * | 2010-02-09 | 2012-07-18 | 南京大学 | 染料敏化太阳能电池工作电极的染料吸附方法 |
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