JP5120305B2 - Manufacturing method of semiconductor element sealing body and manufacturing method of semiconductor package - Google Patents

Description

  The present invention relates to a method for manufacturing a sealed semiconductor element and a method for manufacturing a semiconductor package.

  With the remarkable development of the electronics industry in recent years, the degree of circuit integration in semiconductor elements has rapidly increased to transistors, ICs, LSIs, and super LSIs. For this reason, the size of the semiconductor element has been drastically increased from a long side of about several millimeters to a few ten millimeters. In addition, the number of pins that are electrically connected to the outside has exceeded 200 pins in order to increase the speed of semiconductor devices.

  Also, in the mounting of semiconductor devices, higher density and thinner are further accelerated. As a result, the semiconductor product itself is not only a conventional package represented by QFP (Quad Flat Package) but also BGA ( Surface mount type packages such as Ball Grid Array) have appeared, and the thickness of the package has been further reduced.

  Further, in order to increase the density of the semiconductor device without increasing the area occupied by the surface mount type package, a POP (Package On Package) type semiconductor device in which two or more surface mount type packages are stacked is used. Has been proposed.

  As a method for manufacturing a plurality of such surface-mount type packages at once, for example, as shown below, a substrate technology (EWLP; Embedded) in which a semiconductor element is sealed and embedded in a wafer level package (WLP). Wafer Level Package) has been proposed (see, for example, Patent Document 1).

  First, as shown in FIG. 7A, a dummy substrate 601 having an upper surface provided with an adhesive layer 602 is prepared, and a plurality of semiconductor elements 616 are formed on the dummy substrate 601 with the adhesive layer 602 interposed therebetween. The electrode pads (not shown) are placed so as to be on the dummy substrate 601 side.

  Next, as shown in FIG. 7B, sealing is performed with a sealing portion 617 so as to cover the semiconductor element 616 placed on the dummy substrate 601.

  Next, the adhesive layer 602 is subjected to a treatment such as heating to reduce its adhesive strength, and as shown in FIG. 7C, by removing the dummy substrate 601 from the semiconductor element 616 and the sealing portion 617, A sealing body 610 sealed with a sealing portion 617 is obtained in a state where the semiconductor element 616 is exposed from one surface side (see FIG. 7D).

  Next, as shown in FIG. 8A, a first hole having a through hole 625 on the surface of the sealing body 610 where the semiconductor element 616 is exposed so that the electrode pad included in the semiconductor element 616 is exposed. A covering layer 615 is formed.

  Next, as shown in FIG. 8B, a conductor post 614 that is electrically connected to the electrode pad is formed in the through hole 625, and then the wiring 613 that is electrically connected to the conductor post 614 is connected to the first electrode 614. 1 coating layer 615 is formed.

  Next, as shown in FIG. 8C, a second coating layer having an opening 622 on the first coating layer 615 so that a region to be connected to a later-described bump 611 of the wiring 613 is exposed. 612 is formed.

  Next, as illustrated in FIG. 8D, the bump 611 that is electrically connected to the wiring 613 is formed in the opening 622, and the first coating layer 615 and the second coating layer 612 are formed. The sealing body 610 is cut into pieces by cutting in the thickness direction, and a plurality of packages 600 are collectively obtained.

  As described above, a plurality of packages (semiconductor packages) 600 can be manufactured in a lump. However, in this method, as shown in FIGS. 7B to 7D, the adhesive layer 602 is formed. Since the sealing body 610 formed on the dummy substrate 601 needs to be removed from the dummy substrate 601, the number of processes is increased, and time and labor are required. Therefore, productivity cannot be improved. There is a problem.

  Furthermore, when the sealing body 610 is removed from the dummy substrate 601, the adhesive layer 602 remains on a part of the electrode pad included in the semiconductor element, and as a result, between the electrode pad and the conductor post 614. There is also a problem that sufficient conductivity cannot be obtained.

JP 2006-287235 A

  SUMMARY OF THE INVENTION An object of the present invention is a method for manufacturing a sealed semiconductor element capable of manufacturing a plurality of packages having semiconductor elements at once with excellent productivity, and capable of manufacturing the packages with high reliability. Another object is to provide a method for manufacturing a semiconductor package.

(1) a first sheet material in which a plurality of through holes are formed, a plurality of conductor pillars and a plurality of filling portions, and a second sheet material laminated on the first sheet material; A method for producing a sealed semiconductor element comprising a plurality of semiconductor elements disposed on the first sheet material and having at least one electrode pad, and a sealing portion for sealing the semiconductor elements,
The first sheet material having a flat plate shape, and the second sheet material having the plurality of conductor columns provided so as to penetrate in the thickness direction and the plurality of filling portions opened in the thickness direction. A laminated body forming step of preparing a laminated body;
A through-hole forming step of forming a plurality of through-holes in the thickness direction of the first sheet material so as to correspond to the conductor columns and the positions where the electrode pads are to be disposed;
A semiconductor element disposing step of disposing a plurality of the semiconductor elements on the first sheet material exposed in the filling portion so that the electrode pads correspond to the through holes;
A sealing part for obtaining the semiconductor element sealing body by sealing the inside of the filling part in which the semiconductor element is disposed so as to cover the first sheet material and the semiconductor element to form a sealing part A method for producing a sealed semiconductor element, comprising: a forming step.

  (2) In the sealing part forming step, the sealing part covers the first sheet material, the second sheet material, and the semiconductor element in a state where the granular epoxy resin composition is melted. The method for producing a sealed semiconductor element according to the above (1), which is formed by compressing the molten epoxy resin composition after being supplied to the surface on which the semiconductor element is disposed. .

(3) Conductor post for preparing a semiconductor element sealing body manufactured by the method for manufacturing a semiconductor element sealing body according to (1) or (2), and forming a conductive post having conductivity in the through hole. Forming process;
A wiring forming step of forming a wiring electrically connected to the conductor post on the surface of the sheet material opposite to the semiconductor element;
A covering portion forming step of forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element;
A grinding / polishing step of grinding and / or polishing a surface of the sealing portion opposite to the first sheet material until an end of the conductor post opposite to the first sheet material is exposed;
A bump connection step of electrically connecting the bump to the wiring exposed in the opening;
A method for manufacturing a semiconductor package, comprising: a step of individually obtaining a plurality of semiconductor packages by dividing the semiconductor element sealing body into pieces so as to correspond to each semiconductor element. .

  (4) In the said conductor post formation process, the said conductor post is a manufacturing method of the semiconductor package as described in said (3) formed by the electroplating method.

  (5) The method for manufacturing a semiconductor package according to (3) or (4), wherein in the wiring formation step, the wiring is formed by an electroplating method.

  (6) The method for manufacturing a semiconductor package according to any one of (3) to (5), wherein the conductor post and the bump are formed at different positions in the surface direction of the sheet material.

  According to the present invention, it is possible to reduce the number of processes when manufacturing a plurality of semiconductor packages including semiconductor elements at once, so that the productivity of the semiconductor package can be improved.

  Furthermore, since a semiconductor package can be manufactured in a state in which impurities such as an adhesive adhere to the electrode pads included in the semiconductor element are accurately suppressed or prevented, a highly reliable semiconductor package can be obtained.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device to which the semiconductor package manufactured by the manufacturing method of the semiconductor package of this invention was applied. It is a longitudinal cross-sectional view for demonstrating the manufacturing method of the semiconductor package which manufactures several semiconductor packages collectively. It is a longitudinal cross-sectional view for demonstrating the manufacturing method of the semiconductor package which manufactures several semiconductor packages collectively. It is a longitudinal cross-sectional view for demonstrating the manufacturing method of the semiconductor package which manufactures several semiconductor packages collectively. It is a longitudinal cross-sectional view for demonstrating the method of forming a sealing part. It is a longitudinal cross-sectional view for demonstrating the method of forming a sealing part. It is a longitudinal cross-sectional view for demonstrating the method to manufacture several semiconductor packages collectively by a prior art. It is a longitudinal cross-sectional view for demonstrating the method to manufacture several semiconductor packages collectively by a prior art.

  Hereinafter, the manufacturing method of the semiconductor element sealing body of the present invention and the manufacturing method of the semiconductor package of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device to which a semiconductor package manufactured by the method for manufacturing a semiconductor package of the present invention is applied. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 30 illustrated in FIG. 1 is a POP (Package On Package) type semiconductor device, and includes a package 20 and a package 10 stacked on the package 20.

  The package (semiconductor package) 10 seals the semiconductor element 16, an interposer (substrate) 15 having a through-hole 151 penetrating in the thickness direction, a semiconductor element (die) 16 disposed on the interposer 15, and the semiconductor element 16. Sealing part (mold part) 17, conductor post 14 provided in through-hole 151, wiring 13 electrically connected to conductor post 14, and bump (terminal) 11 electrically connected to wiring 13 And a covering portion 12 provided so as to cover the wiring 13 and expose the bump 11.

  The interposer (substrate) 15 is a substrate that supports the semiconductor element 16, and its planar view shape is usually a square such as a square or a rectangle. The interposer 15 is formed with a plurality of (two in the present embodiment) through-holes (through-holes) 151 penetrating in the thickness direction.

  The semiconductor element 16 has an electrode pad (not shown) on the lower surface side, and this electrode pad is disposed on the interposer 15 so as to correspond to the through hole 151.

  In a state where the semiconductor element 16 is disposed at such a position, the sealing portion 17 is formed so as to cover almost the entire upper surface side of the semiconductor element 16 and the interposer 15.

  A conductor post 14 is provided in the through hole 151, and the conductor post 14 is electrically connected to an electrode pad included in the semiconductor element 16 at an upper end thereof.

  A wiring 13 formed in a predetermined shape is provided on the lower surface of the interposer 15, and a part of the wiring 13 is electrically connected to the lower end of the conductor post 14.

  Further, a bump 11 having a spherical shape is electrically connected to the lower surface of the wiring 13, whereby the semiconductor element 16 and the bump 11 are electrically connected via the electrode pad, the conductor post 14 and the wiring 13. Connected to.

  And the coating | coated part 12 provided with the opening part 121 for exposing the bump 11 from the lower side is provided so that the wiring 13 may be coat | covered.

  The package (semiconductor package) 20 is a package on which the package 10 is stacked. The package (semiconductor package) 20 is stacked on an interposer (first substrate) 25 having a through hole 251 penetrating in the thickness direction. The laminated plate (second base material) 29, the semiconductor element (die) 26 disposed on the interposer 25, the sealing part (mold part) 27 for sealing the semiconductor element 26, and the through hole 251 The provided conductor post 24, the wiring 23 electrically connected to the conductor post 24, the bump (terminal) 21 electrically connected to the wiring 23, the wiring 23 is covered, and the bump 21 is exposed. And a covering portion 22 provided as described above.

  The interposer 25 is a substrate that supports the semiconductor element 26 and the laminated plate 29, and its planar view shape is usually a quadrangle such as a square or a rectangle like the interposer 15. The interposer 25 is formed with a plurality of (four in this embodiment) through-holes (through holes) 251 penetrating in the thickness direction.

  The laminated plate 29 has a conductor column 28 provided so as to penetrate in the thickness direction and a filling portion 291 that opens in the thickness direction, and the planar shape thereof is substantially the same as that of the interposer 25. Shaped. The laminated plate 29 having such a configuration is laminated on the interposer 25 so that the conductor columns 28 correspond to the through holes 251 and the filling portions 291 correspond to the semiconductor elements 26 arranged on the interposer 25.

  The semiconductor element 26 is disposed on the interposer 25 located in the filling portion 291 so that the electrode pad that the semiconductor element 26 has on the lower surface side thereof corresponds to the through hole 251.

  The sealing portion 27 is formed so as to fill the filling portion 291 in a state where the semiconductor element 26 is disposed at such a position, in other words, in a state where the semiconductor element 26 is disposed in the filling portion 291. The semiconductor element 26 is configured to be sealed by the sealing portion 27 on the interposer 25.

  A conductor post 24 is provided in the through hole 251, and the conductor post 24 is electrically connected to an electrode pad or a conductor column 28 included in the semiconductor element 26 at an upper end portion thereof.

  A wiring 23 formed in a predetermined shape is provided on the lower surface of the interposer 25, and a part of the wiring 23 is electrically connected to the lower end of the conductor post 24.

  Further, a spherical bump 21 is electrically connected to the lower surface of the wiring 23, whereby the semiconductor element 26 and the bump 21 are electrically connected via the electrode pad, the conductor post 24 and the wiring 23. Connected to. In addition, the conductor column 28 and the bump 21 are electrically connected via the conductor post 24 and the wiring 23.

  And the coating | coated part 22 provided with the opening part 221 for exposing the bump 21 from the lower side is provided so that the wiring 23 may be coat | covered.

  In the semiconductor device 30 including the package 10 and the package 20 configured as described above, the bumps 11 included in the package 10 and the conductor pillars 28 included in the package 20 are connected, whereby the semiconductor element 16 and the semiconductor element 26 are connected. Electrically connected.

  In the semiconductor device 30 having such a configuration, the package 10 and the package 20 each including the semiconductor element 16 and the semiconductor element 26 having different functions are stacked, and the degree of freedom of combination of the packages (semiconductor elements) is high and versatility. It has the advantage of being high.

  The semiconductor device 30 as described above is manufactured by preparing the package 10 and the package 20 and connecting the conductor pillars 28 and the bumps 11 in a state where the package 10 is disposed on the upper side and the package 20 is disposed on the lower side. However, the manufacturing method of the semiconductor package of the present invention is applied to the manufacture of the package 20 of the package 10 and the package 20.

  That is, for the manufacture of the package 20, a first sheet material having a flat plate shape, a plurality of conductor columns provided so as to penetrate in the thickness direction, and a plurality of the filling portions opened in the thickness direction are provided. The thickness direction of the first sheet material so as to correspond to the laminated body forming step of preparing a laminated body in which the two sheet materials are laminated, and the positions where the conductor pillars and the electrode pads of the semiconductor elements are to be disposed. A through-hole forming step of forming a plurality of through-holes, and a semiconductor in which a plurality of semiconductor elements are arranged on the first sheet material exposed in the filling portion so that the electrode pads correspond to the through-holes A sealing element is obtained by sealing the element placement step and the filling portion where the semiconductor element is placed so as to cover the first sheet material and the semiconductor element to form a sealing portion. The present invention having a stop forming step The method of manufacturing a semiconductor package applies.

  Hereinafter, a method for manufacturing the package 20 using the method for manufacturing a semiconductor package of the present invention will be described in detail.

<Manufacture of package 20>
2 to 4 are longitudinal sectional views for explaining a method of manufacturing a semiconductor package in which a plurality of packages 20 are manufactured at once, and FIGS. 5 and 6 are views for explaining a method of forming the sealing portion 27. It is a longitudinal cross-sectional view. In the following description, the upper side in FIGS. 2 to 6 is referred to as “upper” and the lower side is referred to as “lower”.

[1] First, as shown in FIG. 2A, a first sheet material 25 ′ having a flat plate shape, a plurality of conductive columns 28 provided so as to penetrate in the thickness direction, and the thickness direction are opened. A laminated body 200 is prepared in which a second sheet material 29 ′ having a plurality of filling portions 291 is laminated (laminated body forming step).
The laminated body 200 having such a configuration is formed as follows, for example.

[1-1] First, a first sheet material 25 ′ having a flat plate shape is prepared.
The first sheet material 25 ′ is cut into pieces in the thickness direction to be separated into individual pieces, thereby becoming an interposer (substrate) 25 included in the package 20 and exhibiting a function of supporting the semiconductor element 26.

  The first sheet material 25 ′ is only required to have a hardness that can support the semiconductor element 26, such as a core substrate made of a core material and a buildup substrate made of a buildup material. Either a rigid substrate (hard substrate) or a flexible substrate (flexible substrate) may be used, and among these, a build-up substrate is particularly preferable. A build-up substrate is preferably used because it is particularly excellent in processability.

  Although it does not specifically limit as a core board | substrate, For example, what is mainly comprised with thermosetting resins, such as cyanate resin, an epoxy resin, a bismaleimide-triazine resin, etc. are mentioned. Among these, those composed mainly of cyanate resin are preferably used. The first sheet material 25 ′ composed of such a constituent material has excellent mechanical strength.

  As cyanate resin, what was obtained by making a halogenated cyanide compound and phenols react, and prepolymerizing by methods, such as a heating as needed, is mentioned. Specific examples include bisphenol type cyanate resins such as novolac type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, and tetramethylbisphenol F type cyanate resin.

  Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol type epoxy resin such as bisphenol F type epoxy resin, phenol novolac type epoxy resin, novolac type epoxy resin such as cresol novolak epoxy resin, and biphenyl type epoxy resin. And arylalkylene type epoxy resins such as xylylene type epoxy resins, dicyclopentadiene type epoxy resins, norbornene type epoxy resins, adamantane type epoxy resins and fluorene type epoxy resins.

  When the thermosetting resin as described above is used as the core substrate, the core substrate is obtained by impregnating a glass fiber woven fabric with a thermosetting resin before curing and then curing the thermosetting resin. It is preferable to use those obtained. As a result, the first sheet material 25 ′ (core substrate) exhibits more excellent mechanical strength.

  The build-up substrate is not particularly limited. For example, the resin composition containing a thermosetting resin such as a phenol resin, a urea resin, a melamine resin, or an epoxy resin, a curing agent, and an inorganic filler is cured. The thing comprised as a main material is mentioned.

  Among the resin compositions having such a configuration, those containing a copolymer epoxy resin represented by the following general formula (1) are preferably used as the thermosetting resin. The first sheet material 25 ′ composed of a cured product of such a resin composition has excellent mechanical strength. Further, the first sheet material 25 ′ is formed with the through hole 251 in the next step [2], but is excellent in workability when forming the through hole 251 having a fine shape.

[式中、Ａｒは縮合環芳香族炭化水素基を、Ｘは水素、またはエポキシ基（グリシジルエーテル基）を、Ｒ_２は、水素、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される１種を表す。ｎは１以上の整数であり、ｐ、ｑは０以上の整数であり、またｐ、ｑの値は、繰り返し単位毎に同一でも、異なっていてもよい。]

[Wherein Ar represents a condensed ring aromatic hydrocarbon group, X represents hydrogen or an epoxy group (glycidyl ether group), R ₂ represents hydrogen, a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group, And one selected from benzyl groups. n is an integer of 1 or more, p and q are integers of 0 or more, and the values of p and q may be the same or different for each repeating unit. ]

  In addition, it is preferable that the condensed ring aromatic hydrocarbon group [Ar] of the copolymer epoxy resin is any one of structures represented by the following formulas (Ar1) to (Ar4).

[式中、Ｒ_１は、水素原子、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される１種を表す。]

[Wherein, R ₁ represents _one selected from a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group, and a benzyl group. ]

  In addition, although content of the said copolymer epoxy resin is not specifically limited, In hardened | cured material (1st sheet material 25 '), it is preferable that it is about 3-42 weight%, About 5-35 weight%. It is more preferable that

  In addition to the copolymer epoxy resin, the resin composition may further contain another epoxy resin different from the copolymer epoxy resin. Although it does not specifically limit as another epoxy resin, For example, novolak-type epoxy resins, such as a phenol novolak-type epoxy resin and a cresol novolak epoxy resin, a biphenyl-type epoxy resin, etc. are mentioned.

  The curing agent is not particularly limited, but examples thereof include imidazoles such as 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2-phenyl-4-methylimidazole, and 2-ethyl-4-methylimidazole. Compounds, organic metal salts such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), trisacetylacetonate cobalt (III), triethylamine, tributylamine, diazabicyclo [2, 2,2] tertiary amines such as octane, phenolic compounds such as phenol, bisphenol A, nonylphenol, organic acids such as acetic acid, benzoic acid, salicylic acid, paratoluenesulfonic acid, or mixtures thereof. As the curing accelerator, one kind including these derivatives may be used alone, or two or more kinds including these derivatives may be used in combination.

  The inorganic filler is not particularly limited. For example, talc, calcined clay, unfired clay, mica, silicate such as glass, oxide such as titanium oxide, alumina, silica, fused silica, calcium carbonate, magnesium carbonate , Carbonates such as hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite, zinc borate, barium metaborate, Borate such as aluminum borate, calcium borate, sodium borate, nitrides such as aluminum nitride, boron nitride, silicon nitride, carbon nitride, titanates such as strontium titanate, barium titanate, etc. One or more of these can be used in combination.

  The particle size of the inorganic filler is not particularly limited, but the average particle size is preferably 1.2 μm or less, and more preferably about 0.01 to 1.0 μm.

  Further, the content of the inorganic filler in the cured product (first sheet material 25 ') is preferably about 0 to 85% by weight, and more preferably about 30 to 65% by weight.

  It is preferable that the resin composition further contains a cyanate resin and / or a prepolymer thereof.

  Although it does not specifically limit as said cyanate resin and / or its prepolymer resin, For example, it can obtain by making a halogenated cyanide compound and phenols react, and prepolymerizing by methods, such as a heating, as needed. it can. Moreover, the commercial item prepared in this way can also be used.

  By using the cyanate resin and / or prepolymer thereof, the elastic modulus of the first sheet material 25 ′ can be improved. Cyanate resins (especially novolac-type cyanate resins) have a rigid chemical structure, so they are excellent in heat resistance, have a small decrease in elastic modulus even above the glass transition temperature, and maintain high elastic modulus even at high temperatures Can do. Furthermore, since a functional group having a high polarizability such as a hydroxyl group is not generated by the curing reaction, the dielectric properties can be improved.

  Among the cyanate resins and / or prepolymers thereof, novolak type cyanate resins represented by the following general formula (3) are preferable. Thereby, in addition to the above effects, the glass transition temperature of the first sheet material 25 ′ can be further increased, and the flame retardancy of the insulating resin layer after curing can be further improved.

  Although content of the said cyanate resin and / or its prepolymer is not specifically limited, It is preferable that it is 5 to 50 weight% of a resin composition, More preferably, it is 10 to 40 weight%. Thereby, it becomes more excellent in the workability at the time of forming the through-hole 251 which has a fine shape.

  In the resin composition, various additives such as leveling agents, antifoaming agents, antioxidants, pigments, dyes, antifoaming agents are used to improve various properties such as resin compatibility, stability, and workability. An agent, a flame retardant, an ultraviolet absorber, an ion scavenger, a non-reactive diluent, a reactive diluent, a thixotropic agent, a thickener, and the like may be added.

  Examples of flexible substrates include polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polytetrafluoroethylene (PTFE), polyimide benzoxazole (PIBO), and heat such as liquid crystal polymer. The thing comprised with a plastic resin etc. is mentioned.

  [1-2] Next, a second sheet material 29 ′ having a planar shape and having substantially the same planar view shape as the first sheet material 25 ′ is prepared. A plurality of conductor pillars 28 penetrating in the thickness direction and a plurality of filling portions 291 opened in the thickness direction are formed.

  As a method of forming the conductor pillar 28, for example, first, a through hole corresponding to the shape of the conductor pillar 28 is formed in the second sheet material 29 ′, and then the molten or semi-molten state is formed in the through hole. Examples thereof include a method of supplying and solidifying a metal material, a method of supplying a conductive paste such as a copper paste and a silver paste, and a method of forming a metal layer using a plating method. Among these, it is preferable to form the conductor pillars 28 by using a plating method. Thereby, the conductor pillar 28 excellent in adhesiveness can be formed in the through hole.

  The metal constituting the conductor column 28 is not particularly limited, and examples thereof include Cu, Cu-based alloys, Ni, Ni-based alloys, Au, and Sn-based alloys.

  The filling portion 291 and the through hole may be formed by any method. For example, I: a mask is formed in the region where the filling portion 291 of the second sheet material 29 ′ and the through hole are not formed. , Using this mask, etching the second sheet material 29 ′ to form the filling portion 291 and the through hole, II: forming the filling portion 291 and the through hole of the second sheet material 29 ′ Examples of the method include forming the filling portion 291 and the through hole by selectively irradiating a region with a laser, and it is preferable to use the method II. According to the method II, the fine filling portion 291 and the through hole can be formed relatively easily.

  In the method I, as the method for etching the second sheet material 29 ′, for example, a physical etching method such as plasma etching, reactive etching, beam etching, and light assisted etching, or a chemical etching such as wet etching is used. An etching method is mentioned.

Examples of the type of laser used in the method II include Ne-He laser, YAG laser, YVO ₄ laser, and excimer laser.

  The second sheet material 29 ′ is not particularly limited, and the same material as described for the first sheet material 25 ′ can be used, but among these, the core substrate is particularly preferable. The core base material is preferably used as the second sheet material 29 ′ having particularly excellent mechanical strength.

[1-3] Next, in a state where the second sheet material 29 ′ is laminated on the first sheet material 25 ′, these are joined to each other, whereby a laminated body 200 as shown in FIG. Can be obtained.
In addition, as a method of joining the first sheet material 25 ′ and the second sheet material 29 ′, for example, a method of fixing the portions in contact with each other with an adhesive such as an epoxy adhesive, Although the method of pressing in the state which heated 1st sheet material 25 'and 2nd sheet material 29' etc. is mentioned, It is preferable to use the method of pressing especially. According to such a method, the laminate 200 having excellent adhesion can be obtained easily and reliably.

  [2] Next, a through-hole 251 that penetrates in the thickness direction is formed in the first sheet material 25 ′ of the laminate 200 (see FIG. 2B; a through-hole forming step).

  The through hole 251 is formed at the position corresponding to the conductor column 28 of the second sheet material 29 ′ and when the semiconductor element 26 is disposed on the first sheet material 25 ′ in the next step [3]. The semiconductor element 26 is formed at a position corresponding to the position of the electrode pad.

  Further, in the formation of the through hole 251 for the first sheet material 25 ′, in the step [1-2], the filling portion 291 and the through hole are formed in the second sheet material 29 ′. Any of the methods I, II and II may be used, but the method II is preferably used.

  [3] Next, the semiconductor element 26 is placed (placed) on the first sheet material 25 ′ exposed in the filling portion 291 (see FIG. 2C; semiconductor element placement step).

  At this time, the semiconductor element 26 is disposed at a position where an electrode pad (not shown) of the semiconductor element 26 corresponds to the position of the through hole 251 formed in the step [2].

  In this embodiment, the semiconductor elements 26 arranged in the filling portion 291 on the first sheet material 25 ′ in this step are configured to select those that have been evaluated in advance and determined to be non-defective, and thus collectively in the present embodiment. Thus, the yield of the package 20 manufactured can be improved.

  The semiconductor element 26 may or may not be fixed on the first sheet material 25 ', but is preferably fixed by an adhesive such as an epoxy adhesive. Thereby, when the semiconductor element 26 is sealed with the sealing portion 27 in the next step [4], it is possible to effectively prevent the semiconductor element 26 from being displaced.

  [4] Next, the filling portion 291 in which the semiconductor element 26 is disposed is sealed so as to cover the first sheet material 25 ′ and the semiconductor element 26 to form a sealing portion 27 (FIG. 2 (d); sealing part forming step).

  Thereby, the semiconductor element sealing body 270 in which the first sheet material 25 ′ and the semiconductor element 26 are sealed by the sealing portion 27 in the filling portion 291 is obtained.

  In the present embodiment, the sealing portion 27 is formed not only to fill the filling portion 291 but also to cover almost the entire upper surface of the second sheet material 29 ′.

  In addition, the first through which the plurality of through holes 251 are formed by the laminated body forming step [1], the through hole forming step [2], the semiconductor element arranging step [3], and the sealing portion forming step [4]. On the first sheet material 25 ′, the second sheet material 29 ′ having the sheet material 25 ′, the plurality of conductor columns 28, and the plurality of filling portions 291 and stacked on the first sheet material 25 ′. A semiconductor element sealing body 270 of the present invention is manufactured in which a semiconductor element sealing body 270 is manufactured, which includes a plurality of semiconductor elements 26 having at least one electrode pad and a sealing portion 27 for sealing the semiconductor elements 26. A body manufacturing method is configured.

A method for forming the sealing portion 27 is not particularly limited. For example, the second sheet material 29 ′, the first sheet material 25 ′, and the semiconductor element in a state where the granular epoxy resin composition is melted. 26, after supplying from the upper surface side of 2nd sheet | seat material 29 'so that 26 may be covered, the method of compression-molding this molten epoxy resin composition is mentioned. According to such a method, the semiconductor element 26 can be easily and densely sealed in the filling portion 291 with the sealing portion 27.
Further, as in the present embodiment, the semiconductor element 26 is surrounded by the sealing part 27 made of the epoxy resin composition so as to surround the semiconductor element 26 arranged in the filling part 291 on the first sheet material 25 ′. By setting it as the structure sealed, the difference of the thermal linear expansion coefficient between 1st sheet material 25 ', 2nd sheet material 29', and the sealing part 27 can be set small. As a result, when the semiconductor device 30 is manufactured by stacking the package 10 on the obtained package 20, a solder reflow process for melting and solidifying the bumps 11 is performed. In this solder reflow process, Warpage occurs between the first sheet material 25 ′ and the second sheet material 29 ′ and the sealing portion 27, and due to this, the occurrence of separation between them is accurately suppressed or prevented. can do.

Hereinafter, the case where the sealing part 27 is formed by this method will be described in detail.
[4-1] First, on the resin material supply container 502 provided with a resin material supply mechanism such as a shutter that can instantaneously supply the epoxy resin composition into the lower mold cavity 504, the conveying means such as the vibration feeder 501 A certain amount of the granular epoxy resin composition 503 is transported by using this, thereby preparing a resin material supply container 502 containing the granular epoxy resin composition 503 (see FIG. 5).

  At this time, the measurement of the granular epoxy resin composition 503 in the resin material supply container 502 is performed by a measuring means installed under the resin material supply container 502.

  Here, the granular epoxy resin composition 503 contains an epoxy resin as a constituent material thereof.

  Examples of the epoxy resin include monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. Specifically, crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin; cresol novolac type epoxy resin, phenol novolac type epoxy resin, Novolac type epoxy resins such as naphthol novolac type epoxy resins; Phenol aralkyl type epoxy resins such as phenylene skeleton-containing phenol aralkyl type epoxy resins, biphenylene skeleton containing phenol aralkyl type epoxy resins, phenylene skeleton containing naphthol aralkyl type epoxy resins; Triphenolmethane type Trifunctional epoxy resins such as epoxy resins and alkyl-modified triphenolmethane epoxy resins; dicyclopentadiene-modified phenolic epoxy Modified phenol type epoxy resins such as cis-resin and terpene modified phenol type epoxy resins; heterocyclic ring-containing epoxy resins such as triazine nucleus-containing epoxy resins, and the like. Among these, one kind or two or more kinds can be used in combination. .

  Moreover, it is preferable that the epoxy resin composition 503 contains the hardening | curing agent as the constituent material.

  The curing agent is not particularly limited as long as it can be cured by reacting with an epoxy resin, and examples thereof include ethylene diamine, trimethylene diamine, tetramethylene diamine, and hexamethylene diamine. Linear aliphatic diamine, metaphenylenediamine, paraphenylenediamine, paraxylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4,4'-diamino Diphenylsulfone, 4,4′-diaminodicyclohexane, bis (4-aminophenyl) phenylmethane, 1,5-diaminonaphthalene, metaxylenediamine, paraxylenediamine, 1,1-bis (4-aminophenyl) cyclohexane, Dicyanodiamide Amino acids; resol type phenol resins such as aniline-modified resole resin and dimethyl ether resole resin; novolac type phenol resins such as phenol novolac resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin; phenylene skeleton-containing phenol aralkyl resin Phenol aralkyl resins such as biphenylene skeleton-containing phenol aralkyl resins; phenol resins having a condensed polycyclic structure such as naphthalene skeleton and anthracene skeleton; polyoxystyrenes such as polyparaoxystyrene; hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride Acid (MTHPA) alicyclic acid anhydride, trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzofu Acid anhydrides including aromatic acid anhydrides such as non-tetracarboxylic acid (BTDA); Polymercaptan compounds such as polysulfides, thioesters, thioethers; Isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; Carboxylic acid-containing polyester resins Organic acids, such as these, are mentioned, Among these, it can be used 1 type or in combination of 2 or more types.

  Among these, as a curing agent used for the constituent material of the sealing portion 17 for sealing the semiconductor element 16, at least two phenolic hydroxyl groups in one molecule from the viewpoint of moisture resistance, reliability, and the like. A compound having is preferably used. Examples of the curing agent include novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin; resol type phenol resin; polyoxystyrene such as polyparaoxystyrene; phenylene skeleton-containing phenol. Examples thereof include aralkyl resins and biphenylene skeleton-containing phenol aralkyl resins.

  Moreover, the epoxy resin composition 503 can use what contains an inorganic filler as a constituent material.

  The inorganic filler is not particularly limited. For example, silica such as fused crushed silica, fused spherical silica, crystalline silica, secondary agglomerated silica; alumina; titanium white; aluminum hydroxide; talc; clay; mica; glass fiber, etc. These can be used, and one or more of these can be used in combination. Among these, fused spherical silica is particularly preferable. Further, the particle shape is preferably infinitely spherical. Furthermore, the inorganic filling amount can be increased by mixing particles having different particle sizes, but the particle size is considered in consideration of the filling property around the semiconductor element 16 in the lower mold cavity 504. It is preferable that they are 0.01 micrometer or more and 150 micrometers or less.

  Moreover, it is preferable that the epoxy resin composition 503 contains the hardening accelerator as the structural material.

  The curing accelerator is not particularly limited, and examples thereof include diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof; amine compounds such as tributylamine and benzyldimethylamine; Imidazole compounds such as 2-methylimidazole; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetra Tetra-substituted phosphonium / tetra-substituted borates such as phenylphosphonium / tetranaphthoyloxyborate and tetraphenylphosphonium / tetranaphthyloxyborate; Include triphenylphosphine or the like is can be used singly or in combination of two or more of them.

  Further, the epoxy resin composition 503 includes, in addition to the above-described constituent materials, a coupling agent such as γ-glycidoxypropyltrimethoxysilane; a colorant such as carbon black; a natural wax, a synthetic wax, Release agents such as higher fatty acids or metal salts thereof, paraffin and oxidized polyethylene; low stress agents such as silicone oil and silicone rubber; ion scavengers such as hydrotalcite; flame retardants such as aluminum hydroxide; Various additives may be contained.

  Further, in the granular epoxy resin composition 503, the ratio of coarse particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3% by mass or less with respect to the total resin composition. Preferably, it is 1 mass% or less. This is because the larger the particle size, the larger the mass and volume. Therefore, the greater the proportion of the larger particles, the lower the weighing accuracy at the time of weighing, and a decrease in the quality of the sealing part 27 after compression molding. This may cause problems such as clogging at supply ports such as the vibration feeder 501 and the resin material supply container 502. On the other hand, if the range is equal to or less than the above-described upper limit value, a good weighing accuracy can be obtained, thereby reducing the possibility of causing a deterioration in quality in the semiconductor device, and causing problems such as clogging at the supply port. This is because the fear is reduced. Moreover, about the lower limit of the ratio of the coarse grain of 2 mm or more, it does not specifically limit and 0 mass% may be sufficient.

  Moreover, in order to obtain stable weighing accuracy, the granular epoxy resin composition 503 has a proportion of fine powder of less than 106 μm in the particle size distribution measured by sieving using a JIS standard sieve is 5 with respect to the total resin composition. The content is preferably at most mass%, more preferably at most 3 mass%. This means that fine powder of less than 106 μm is fixed during storage of the granular epoxy resin composition 503, fixed particles on the transport path of the granular epoxy resin composition 503, and adhered to the transport device. This may cause poor conveyance and hinder continuous productivity and production cycle time. On the other hand, when the range is equal to or less than the above-described upper limit value, there is almost no sticking of particles and adhesion to the conveying device, and good continuous productivity and stable productivity can be obtained. Further, the lower limit value of the proportion of fine powder having a particle size of less than 106 μm is not particularly limited, and may be 0% by mass.

  In addition, as a method for measuring the particle size distribution of the granular epoxy resin composition 503, for example, using a JIS standard sieve having a mesh size of 2.00 mm and 106 μm provided in a low-tap type sieve vibrator, 40 g of sample is passed through a sieve while vibrating (hammer stroke: 120 times / min.), And passes through a 106 μm sieve, the mass% of coarse particles remaining on the 2.00 mm sieve with respect to the sample weight before classification. The method for obtaining the mass% of the fine powder to be used is preferable because the characteristics necessary for actual compression molding can be realized. In this method, particles having a high aspect ratio (the minor axis is smaller than the sieve opening and the major axis is larger) may pass through each sieve, but for convenience, they are classified by a certain method. The particle size distribution of the granular resin composition is defined by mass% of the components.

  The granular epoxy resin composition 503 preferably has a ratio D1 / D2 of the granule density D1 and the cured product specific gravity D2 of about 0.88 to 0.95, preferably 0.90 to 0.94. More preferably, it is about. When the lower limit value is exceeded, the voids inside the particles do not become too high, and there is a low possibility that problems such as the generation of voids in the sealing portion 27 during compression molding will occur. Moreover, if it is below the above-mentioned upper limit value, the granule density will not become too high, and there will be no problem that the moving speed of the granule becomes slow at the time of conveyance by a conveying means such as the vibration feeder 501. If the moving speed becomes slow, there is a risk of stagnation, which causes problems such as sticking. Furthermore, the granule density D1 of the granular epoxy resin composition 503 is preferably 1.95 or less, and more preferably 1.90 or less. When the upper limit value is not exceeded, good transportability is obtained. Further, the lower limit value of the granule density D1 of the granular epoxy resin composition 503 is not particularly limited, but may be 1.75 or more which is a range in which the porosity inside the particles does not become too high. preferable.

  The granule density D1 is measured by sieving the granular resin composition with a JIS standard sieve of 32 mesh (aperture 500 μm) for easy handling, and then adding about 5 g of the granular resin composition on the sieve. A sample weighed to 0.1 mg is used. After filling the pycnometer (capacity 50 cc) with distilled water and adding a few drops of surfactant, the mass of the pycnometer containing distilled water and surfactant is measured. Next, the sample is put into a pycnometer, the mass of the entire pycnometer containing distilled water, a surfactant, and the sample is measured, and calculated according to the following formula (1).

Granule density (g / ml) = (Mp × ρw) / (Mw + Mp−Mt) (1)
ρw: density of distilled water at the measurement temperature (g / ml)
Mw: Mass of a pycnometer filled with distilled water and further added with a few drops of surfactant (g)
Mp: sample mass (g)
Mt: Mass of the pycnometer containing distilled water, surfactant and sample (g)

  The surfactant is used to increase the wetting of distilled water and the sample and minimize the entrainment of bubbles. There are no particular limitations on the surfactant that can be used, and a material that eliminates entrainment of bubbles may be selected.

  Moreover, as a measuring method of hardened | cured material specific gravity D2, the measuring method of hardened | cured material specific gravity by transfer molding which is a simpler method is used. Specifically, the granular epoxy resin composition 503 is once compressed into tablets of a predetermined size, and using a transfer molding machine, the mold temperature is 175 ± 5 ° C., the injection pressure is 7 MPa, the curing time is 120 seconds, and the diameter is Examples include a method of forming a disk having a size of 50 mm and a thickness of 3 mm, calculating the mass and volume, and calculating the specific gravity of the cured product.

  [4-2] Next, the resin material supply container 502 in which the granular epoxy resin composition 503 is placed is placed between the upper mold and the lower mold of the compression mold, and in the step [3] The formed laminated body 200 arranged on the first sheet material 25 ′ where the semiconductor element 26 is exposed in the filling portion 291 is placed on the upper mold of the compression mold by a fixing means such as clamping and adsorption. The semiconductor element 26 is fixed so as to be on the lower side (not shown).

  [4-3] Next, the weighed granular epoxy resin composition 503 is supplied into the lower mold cavity 504 provided in the lower mold by a resin material supply mechanism such as a shutter constituting the bottom surface of the resin material supply container 502. (See FIG. 6).

  Thereby, the granular epoxy resin composition 503 is heated to a predetermined temperature in the lower mold cavity 504, and as a result, is melted.

  [4-4] Next, after carrying out the resin material supply container 502 from between the upper mold and the lower mold of the compression mold, the mold is clamped by bringing the distance between the upper mold and the lower mold closer. The melted epoxy resin composition is filled in the lower mold cavity 504 so as to surround the semiconductor element 16. Further, the molten epoxy resin composition is cured to form a sealing portion 27, and the semiconductor element 26 disposed on the first sheet material 25 'is sealed.

  At this time, the inside of the lower mold cavity 504 is preferably under reduced pressure. Thereby, the filling rate by an epoxy resin composition can be improved more.

  [4-5] Next, after leaving for a predetermined time, the compression mold is separated from the upper mold and the lower mold to open the compression mold and release the fixing means. The formed laminated body 200, that is, the semiconductor element sealing body 270 is taken out.

  As described above, the sealing portion 27 that covers the second sheet material 29 ′, the first sheet material 25 ′, and the semiconductor element 26 is formed on the upper surface side of the second sheet material 29 ′. Thus, the semiconductor element sealing body 270 is obtained.

  [5] Next, the conductive post 24 having conductivity is formed in the through hole 251 (conductor post forming step).

  The method for forming the conductor post 24 is not particularly limited. For example, I: a method for forming the conductor post 24 using a plating method such as an electrolytic plating method or an electroless plating method, and II: a conductive material. Examples of the method include forming the conductor post 24 by supplying the liquid material to the through-hole 251 and drying / solidifying it. It is preferable to form the conductor post 24 using the method I, particularly electrolytic plating. . According to the electrolytic plating method, the conductor post 24 exhibiting excellent adhesion can be easily and reliably formed on the electrode pad of the semiconductor element 26 and the wiring 23 formed in the next step [6].

Hereinafter, a method of forming the conductor post 24 using the electroplating method will be described.
[5-1] First, as shown in FIG. 2 (e), the first sheet is formed on the upper surface side of the first sheet material 25 ′, that is, on the side opposite to the semiconductor element 26 of the first sheet material 25 ′. A conductive seed layer 241 is integrally formed so as to cover the upper surface of the material 25 ′, the inner surface of the through hole 251, and the electrode pad exposed from the through hole 251.

  The seed layer 241 is composed of, for example, a Cu / Ti film. By using a vapor deposition method such as a sputtering method, a Ti film is first formed, and then a Cu film is formed on the Ti film. Obtainable.

  2 (e), the positions of the first sheet material 25 'and the semiconductor element 26 are shown upside down, different from FIGS. 2 (a) to 2 (d).

  [5-2] Next, as shown in FIG. 2F, a mask (resist layer) 242 is formed in a region where the conductor post 24 is not formed, that is, in a region excluding the through hole 251.

  The mask 242 is formed by supplying a liquid material containing a photosensitive material onto the seed layer 241 using a coating method or the like, and then exposing through a photomask corresponding to the shape of the conductor post 24 to be formed. Then, it can be formed by developing with a developer.

  The photosensitive material used in this step may be either a negative photosensitive material or a positive photosensitive material.

  [5-3] Next, the conductor post 24 is formed by an electrolytic plating method using the seed layer 241 as an electrode (see FIG. 3A).

  Here, since the mask 242 is formed by the step [5-2] so that the through hole 251 is selectively exposed from the mask 242, the conductor post 24 is filled in the through hole 251 in this step. Can be selectively formed.

  The metal constituting the conductor post 24 is not particularly limited, and examples thereof include Cu, Cu-based alloy, Ni, Ni-based alloy, and Au.

  As shown in FIG. 3A, the conductor post 24 does not need to be formed so as to fill almost all of the through hole 251, and is formed so as to cover at least the inner surface of the through hole 251 and the electrode pad. It only has to be.

  [5-4] Next, the mask 242 formed on the seed layer 241 is removed (see FIG. 3B).

  The removal of the mask 242 may be performed by combining one or more of physical etching methods such as plasma etching, reactive etching, beam etching, and light-assisted etching, and chemical etching methods such as wet etching. Specifically, a method in which the mask 242 is removed by swelling and dissolving with an alkaline stripping solution is preferably used.

When the wiring 23 is formed by electrolytic plating in the next step [6], the seed layer 241 is not removed and remains on the first sheet material 25 ′ when the mask 242 is removed. Let me.
The conductor post 24 is formed in the through hole 251 through the above process.

  [6] Next, in order to electrically connect to the conductor post 24 on the upper surface side of the first sheet material 25 ′, that is, the surface side opposite to the semiconductor element 26 of the first sheet material 25 ′ A wiring 23 patterned into a shape is formed (wiring forming step).

  As a method of forming the wiring 23, the same method as the method of forming the conductor post 24 described in the step [5] can be used, and the electrolytic plating method is used in the same manner as the case of forming the conductor post 24. Is preferred.

Hereinafter, a method of forming the wiring 23 using the electroplating method will be described.
[6-1] First, as shown in FIG. 3C, a mask 232 is formed on the upper surface side of the first sheet material 25 ′, that is, in the region where the wiring 23 is not formed on the upper surface of the seed layer 241 in this embodiment. To do.

  For the formation of the mask 232, the same method as that described as the method for forming the mask 242 in the step [5-2] is used.

[6-2] Next, the wiring 23 is formed by electrolytic plating (see FIG. 3D).
Here, in this step [6-2], when the wiring 23 is formed by electrolytic plating, it is left on the upper surface of the first sheet material 25 ′ without removing the seed layer 241 as described above. Therefore, the wiring 23 can be formed by electroplating using the seed layer 241 as an electrode.

  In addition, it does not specifically limit as a metal which comprises the wiring 23, The thing similar to having mentioned as a metal which comprises the conductor post 24 can be used. Furthermore, the constituent material of the conductor post 24 and the wiring 23 may be the same or different.

  [6-3] Next, after removing the mask 232 formed on the seed layer 241 as shown in FIG. 4A, the first sheet material 25 ′ is removed as shown in FIG. The seed layer 241 exposed by removing the mask 232 on the upper surface is removed.

  The removal of the mask 232 and the seed layer 241 can use the same method as described in the above step [5-4]. Among these, the mask 232 is preferably removed by swelling and dissolving the mask 232 with an alkali stripping solution, and the seed layer 241 is preferably removed by using the etching solution to remove the seed layer 241. It is done.

  Through the steps described above, the wiring 23 formed in a predetermined shape on the upper surface of the first sheet material 25 ′ can be formed in a state of being electrically connected to the conductor post 24.

  [7] Next, as shown in FIG. 4C, on the upper surface side of the first sheet material 25 ′, that is, on the surface side opposite to the semiconductor element 26 of the first sheet material 25 ′, The covering portion 22 including the opening 221 is formed so that a part is exposed (covering portion forming step).

  The opening 221 is formed so as to correspond to the position where the bump 21 is formed in the post-process [9].

  Further, it is preferable to form a covering layer (under barrier metal layer (UBM layer)) on the wiring 23 exposed from the opening 221. Thereby, for example, when the wiring 23 is made of Cu or a Cu-based alloy, the elution of Cu atoms from the wiring 23 to the bumps 21 can be suppressed or prevented accurately.

  Such a coating layer is usually composed of a laminate in which an upper layer mainly composed of Au is laminated on a lower layer mainly composed of Ni, and is formed using, for example, an electroless plating method.

  The covering portion 22 is formed by supplying a liquid material (varnish) containing an insulating material having photosensitivity to the upper surface side of the first sheet material 25 ′ using a coating method or the like, and then opening to be formed. After exposure through a photomask corresponding to the shape of the portion 221, the region to be the opening 221 is removed with a developer (etching solution).

  Here, the insulating material having photosensitivity used in this step is not particularly limited, but the following materials are preferable as those having excellent adhesion, thickness uniformity, and step embedding property. Used for.

  First, an alkali-soluble resin composition containing an alkali-soluble resin and a photosensitizer is suitably used as an insulating material having photosensitivity.

  Examples of the alkali-soluble resin include acrylic resins such as cresol-type novolak resins, hydroxystyrene resins, methacrylic acid resins, and methacrylic ester resins, cyclic olefin resins containing hydroxyl groups, carboxyl groups, and polyamide resins. . Among these, polyamide-based resins are preferable. Specifically, resins having at least one of a polybenzoxazole structure and a polyimide structure and having a hydroxyl group, a carboxyl group, an ether bond or an ester bond in the main chain or side chain, polybenzox Examples thereof include a resin having an oxazole precursor structure, a resin having a polyimide precursor structure, and a resin having a polyamic acid ester structure. As such a polyamide-type resin, the polyamide-type resin shown, for example by following General formula (4) can be mentioned.

  The polyamide-based resin represented by the general formula (1) includes, for example, a compound selected from a diamine having a X structure, bis (aminophenol), diaminophenol, and the like, a tetracarboxylic acid anhydride having a Y structure, and trimellit. It can be obtained by reacting with a compound selected from acid anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

  When the polyamide resin represented by the general formula (1) is heated at, for example, 150 to 400 ° C., dehydration and ring closure occur, and a heat resistant resin is obtained in the form of polyimide, polybenzoxazole, or a copolymer of both.

  X represented by the general formula (1) is a cyclic compound group, and examples thereof include aromatic compounds such as a benzene ring and a naphthalene ring, and heterocyclic compounds such as bisphenols, pyrroles, and furans.

R ¹ is a hydroxyl group or —O—R ³ , and R ³ is an organic group having 1 to 15 carbon atoms or a nitrogen-containing cyclic compound. Specific examples of R ³ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. Can be mentioned.

R ³ is used for the purpose of adjusting the solubility of the hydroxyl group in an alkaline aqueous solution.
It is also possible to use a nitrogen-containing cyclic compound as R ^3. Thereby, it is excellent in adhesiveness with a metal wiring (especially copper wiring) etc. Examples of the nitrogen-containing cyclic compound include (1H-tetrazol-5-yl) amino group, 1- (1H-tetrazol-5-yl) methyl-amino group, and 3- (1H-tetrazol-5-yl) benz. -An amino group etc. are mentioned.

Y represented by the general formula (1) is a cyclic compound group, and examples thereof include those similar to X. For example, aromatic compounds such as benzene ring and naphthalene ring, bisphenols, pyrroles, furans, pyridine And the like, and the like.
As shown in the general formula (1), 0 to 4 R ² are bonded to Y.

R ² is a hydroxyl group, a carboxyl group, —O—R ³ , or —COOR ³ , and may be the same or different. R ³ is an organic group having 1 to 15 carbon atoms or a nitrogen-containing cyclic compound. Specific examples of R ³ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. Can be mentioned.

However, if the hydroxyl group is not as R ^1, at least one of R ² must be a carboxyl group. Further, when a carboxyl group is not as R ^2, at least one of R ¹ must be a hydroxyl group.
R ³ is used for the purpose of adjusting the solubility of the hydroxyl group in an alkaline aqueous solution.

  Moreover, it is preferable that at least one of the side chain and the other terminal of the alkali-soluble resin is substituted with a nitrogen-containing cyclic compound. Thereby, the adhesiveness with respect to the wiring 23 of the coating | coated part 22 can be improved.

  Examples of the nitrogen-containing cyclic compound include 1- (5-1H-triazoyl) methylamino group, 3- (1H-pyrazoyl) amino group, 4- (1H-pyrazoyl) amino group, and 5- (1H-pyrazoyl) amino. Group, 1- (3-1H-pyrazolyl) methylamino group, 1- (4-1H-pyrazoyl) methylamino group, 1- (5-1H-pyrazolyl) methylamino group, (1H-tetrazol-5-yl) An amino group, 1- (1H-tetrazol-5-yl) methyl-amino group, 3- (1H-tetrazol-5-yl) benz-amino group and the like can be mentioned.

  The alkali-soluble resin composition contains a photosensitizer. As a result, a chemical reaction occurs in the alkali-soluble resin by irradiation with ultraviolet rays or the like, and due to this, it becomes easy to dissolve in the alkaline aqueous solution, and a difference in solubility can be provided.

  The photosensitizer is not particularly limited. For example, an ester of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid. Is mentioned.

  The content of the photosensitizer is preferably 1 to 50% by weight, and particularly preferably 5 to 30% by weight, based on the entire alkali-soluble resin composition. When the content is within the above range, the sensitivity is particularly excellent.

  Moreover, additives, such as a coupling agent, such as a leveling agent, a silane coupling agent, a titanate coupling agent, and those each reaction material, can be added to an alkali-soluble resin composition as needed.

  The alkali-soluble resin composition as described above is usually used by dissolving the above-described components in a solvent to form a liquid material (varnish-like).

  Examples of the solvent include, but are not limited to, N-methyl-2-pyrrolidone, γ-butyrolactone, N, N′-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, Dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate Methyl-3-methoxypropionate and the like, and a single solvent or a mixed solvent thereof is used.

<< norbornene resin composition >>
Next, in addition to the alkali-soluble resin composition described above, a norbornene-based resin composition may be mentioned as a material that can be suitably used as an insulating material having photosensitivity. Among these norbornene-based resin compositions, particularly those that exhibit remarkable adhesion, thickness uniformity and step embedding, a polymer of cyclic olefin or a hydrogenated product thereof (A) and the following general formula (4) The resin composition containing the compound (B) which has a structure shown by is used preferably.

  The cyclic olefin polymer or the hydrogenated product (A) thereof contained in the resin composition is not particularly limited, but is a polymer of a monocyclic olefin monomer such as cyclohexene or cyclooctene, norbornene , Norbornadiene, dicyclopentadiene, dihydrodicyclopentadiene, tetracyclododecene, tricyclopentadiene, dihydrotricyclopentadiene, tetracyclopentadiene, dihydrotetracyclopentadiene, etc. Examples thereof include a monomer polymer. Among these, a polymer of a polycyclic olefin monomer excellent in moisture resistance and chemical resistance is preferable, and among these, a norbornene-based monomer is particularly preferable from the viewpoint of heat resistance and mechanical strength of the cured resin composition.

  Further, the cationically polymerizable functional group of the cyclic olefin polymer or its hydrogenated product (A) is not particularly limited, and is an epoxy group, oxetanyl group, vinyl ether group, alkenyl group, alkynyl group, alkoxysilyl group. The epoxy group and the oxetanyl group are preferable from the viewpoint of photoresolution and mechanical strength after curing.

The monomer having such a cationically polymerizable functional group is not particularly limited, and examples thereof include an epoxy group such as 5-[(2,3-epoxypropoxy) methyl] -2-norbornene. As those having an oxetanyl group, 5-[{(3-ethyl-3-oxetanyl) methoxy} methyl] -2-norbornene and the like, and those having a vinyl ether group as 5-vinyloxymethyl-2-norbornene and the like Examples of those having an alkenyl group include 5-allyl-2-norbornene, 5-methylidene-2-norbornene, 5-ethylidene-2-norbornene, 5-isopropylidene-2-norbornene, and 5- (2-propenyl) -2. -Norbornene, 5- (3-butenyl) -2-norbornene, 5- (1-methyl-2-propenyl) -2 -Norbornene, 5- (4-pentenyl) -2-norbornene, 5- (1-methyl-3-butenyl) -2-norbornene, 5- (5-hexenyl) -2-norbornene, 5- (1-methyl- 4-pentenyl) -2-norbornene, 5- (2,3-dimethyl-3-butenyl) -2-norbornene, 5- (2-ethyl-3-butenyl) -2-norbornene, 5- (3,4 Dimethyl-4-pentenyl) -2-norbornene, 5- (7-octenyl) -2-norbornene, 5- (2-methyl-6-heptenyl) -2-norbornene, 5- (1,2-dimethyl-5- Hexenyl) -2-norbornene, 5- (5-ethyl-5-hexenyl) -2-norbornene, 5- (1,2,3-trimethyl-4-pentenyl) -2-norbornene, 8-ethylidene Torashikuro [4.4.0.1 ^2,5. 1 ^7,12] Dodekku-3-ene, 8-ethylidene tetracyclo [4.4.0.1 ^{2, 5.} 1 ^7,10 0 ^1,6 ] As having an alkynyl group such as dodec-3-ene, etc., as having an alkoxysilyl group such as 5-ethynyl-2-norbornene, dimethyl (5-norbornene-2- Yl) methoxysilane, 5-trimethoxysilyl-2-norbornene, 5-triethoxysilyl-2-norbornene, 5- (2-trimethoxysilylethyl) -2-norbornene, 5- (2-triethoxysilylethyl) Examples include 2-norbornene, 5- (3-trimethoxysilylpropyl) -2-norbornene, and 5- (4-trimethoxysilylbutyl) -2-norbornene.

  Furthermore, the polymer of cyclic olefin or its hydrogenated product (A) is not limited to the cyclic olefin monomer having a cationic polymerizable functional group, but also the cyclic olefin monomer having a cationic polymerizable functional group. Polymers with other monomers may also be used. From the viewpoint of photoresolution and mechanical strength after curing, the polymerization ratio of the cyclic olefin monomer having a photoreactive functional group is preferably 20 to 80 mol%, particularly preferably 30 to 70 mol%.

Further, the other monomer is not particularly limited, and examples thereof include those having an alkyl group such as 5-methyl-2-norbornene, 5-ethyl-2-norbornene, 5-propyl-2-norbornene. 5-butyl-2-norbornene, 5-pentyl-2-norbornene, 5-hexyl-2-norbornene, 5-heptyl-2-norbornene, 5-octyl-2-norbornene, 5-nonyl-2-norbornene, 5 -Decyl-2-norbornene and the like having a silyl group include 1,1,3,3,5,5-hexamethyl-1,5-dimethylbis (2- (5-norbornen-2-yl) ethyl) Examples of those having an aryl group such as trisiloxane, 5-trimethylsilylmethyl ether-2-norbornene, and the like include 5-phenyl-2- Examples of those having an aralkyl group such as rubornene, 5-naphthyl-2-norbornene, and 5-pentafluorophenyl-2-norbornene include 5-benzyl-2-norbornene, 5-phenethyl-2-norbornene, and 5-pentafluorophenyl. Methyl-2-norbornene, 5- (2-pentafluorophenylethyl) -2-norbornene, 5- (3-pentafluorophenylpropyl) -2-norbornene, etc., hydroxyl group, ether group, carboxyl group, ester group, acryloyl As those having a group or methacryloyl group, 5-norbornene-2-methanol and its alkyl ether, acetic acid 5-norbornene-2-methyl ester, propionic acid 5-norbornene-2-methyl ester, butyric acid 5-norbornene-2 -Mechi Esters, valeric acid 5-norbornene-2-methyl ester, caproic acid 5-norbornene-2-methyl ester, caprylic acid 5-norbornene-2-methyl ester, capric acid 5-norbornene-2-methyl ester, lauric acid 5- Norbornene-2-methyl ester, stearic acid 5-norbornene-2-methyl ester, oleic acid 5-norbornene-2-methyl ester, linolenic acid 5-norbornene-2-methyl ester, 5-norbornene-2-carboxylic acid, 5 -Norbornene-2-carboxylic acid methyl ester, 5-norbornene-2-carboxylic acid ethyl ester, 5-norbornene-2-carboxylic acid t-butyl ester, 5-norbornene-2-carboxylic acid i-butyl ester, 5-norbornene 2-Carboxylic acid trimethyl Rusilyl ester, 5-norbornene-2-carboxylic acid triethylsilyl ester, 5-norbornene-2-carboxylic acid isobornyl ester, 5-norbornene-2-carboxylic acid 2-hydroxyethyl ester, 5-norbornene-2-methyl 2-carboxylic acid methyl ester, cinnamic acid 5-norbornene-2-methyl ester, 5-norbornene-2-methylethyl carbonate, 5-norbornene-2-methyl n-butyl carbonate, 5-norbornene-2- Methyl t-butyl carbonate, 5-methoxy-2-norbornene, (meth) acrylic acid 5-norbornene-2-methyl ester, (meth) acrylic acid 5-norbornene-2-ethyl ester, (meth) acrylic acid 5- Norbornene-2-n-butyl ester, (meth) acte Luric acid 5-norbornene-2-n-propyl ester, (meth) acrylic acid 5-norbornene-2-i-butyl ester, (meth) acrylic acid 5-norbornene-2-i-propyl ester, (meth) acrylic acid 8-methoxycarbonyl as a 5-norbornene-2-hexyl ester, (meth) acrylic acid 5-norbornene-2-octyl ester, (meth) acrylic acid 5-norbornene-2-decyl ester, etc. Tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-ethoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-n-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-i-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-n-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8- (2-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8- (1-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-t-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-cyclohexyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8- (4′-t-butylcyclohexyloxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-phenoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-tetrahydrofuranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 8-tetrahydropyranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-methoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-ethoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-n-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-i-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-n-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8- (2-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8- (1-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-t-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-cyclohexyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8- (4′-t-butylcyclohexyloxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-phenoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-tetrahydrofuranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-tetrahydropyranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 8-methyl-8-acetoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (methoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (ethoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (n-propoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (i-propoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (n-butoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (t-butoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (cyclohexyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (phenoxyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (tetrahydrofuranyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 8,9-di (tetrahydropyranyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene-8-carboxylic acid, 8-methyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene-8-carboxylic acid, 8-methyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-ethyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyltetracyclo [4.4.0.1 ^2,5 . 0 ^1,6 ] dodec-3-ene and the like.

  In addition, the polymerization form of the cyclic olefin monomer is not particularly limited, and known forms such as random polymerization and block polymerization can be applied. Further, the polymerization method includes addition polymerization and ring-opening polymerization. Legal etc. are mentioned. Specific examples of the polymer include (co) polymers of bicyclo [2.2.1] hept-2-ene derivative monomers such as one or more norbornene compounds, bicyclo [2.2.1] hepta. 2-ene derivative monomers and copolymers of other monomers capable of copolymerization such as α-olefins, and hydrogenated products of these copolymers. Therefore, an addition polymer of one or more bicyclo [2.2.1] hept-2-ene derivatives is preferable.

  The weight average molecular weight of the cyclic olefin polymer or hydrogenated product (A) thereof is not particularly limited, but is preferably about 5000 to 500000 from the viewpoint of solubility in a solvent and fluidity of the photosensitive resin composition. 7000 to 200,000 is particularly preferable. The weight average molecular weight can be measured using gel permeation chromatography (GPC) using standard polynorbornene (based on ASTM D3363-91).

  The weight average molecular weight of the polymer of cyclic olefin or its hydrogenated product (A) can be controlled by changing the ratio of the polymerization initiator to the monomer or changing the polymerization time.

  Here, by making the resin composition contain a compound (B) having a structure represented by the following general formula (5), not only the cured product of this composition has sufficient mechanical strength but also a coating When the part 22 is produced, the covering part 22 can have sufficient flatness.

（式中、Ｒ^１、Ｒ^２は有機基であり、同じでも異なっていてもよく、Ｒ^３〜Ｒ^１０はそれぞれ独立して水素原子あるいは炭素数１〜２のアルキル基またはアルコキシル基であり、Ｘ、Ｙ、Ｚは有機基であり、同じでも異なっていてもよく、Ｒ^１１は直結あるいは炭素数１〜６の炭化水素基または酸素を含んでいる炭素数１〜１２の有機基のいずれかであり、ｎは０〜６である。）

(Wherein R ¹ and R ² are organic groups which may be the same or different, and R ^{3 to} R ¹⁰ are each independently a hydrogen atom, an alkyl group having 1 to 2 carbon atoms or an alkoxyl group, X, Y and Z are organic groups which may be the same or different, and R ¹¹ is either a direct bond or a hydrocarbon group having 1 to 6 carbon atoms or an organic group having 1 to 12 carbon atoms containing oxygen. And n is 0-6.)

R ¹ and R ² in the general formula (5) are organic groups, which may be the same or different, each having 1 to 12 carbon atoms or an organic group having 1 to 12 carbon atoms containing oxygen. Groups are preferred. R ^{3 to} R ¹⁰ are each independently a hydrogen atom, an alkyl group having 1 to 2 carbon atoms, or an alkoxyl group. R ¹¹ is either a direct bond or a hydrocarbon group having 1 to 6 carbon atoms or an organic group having 1 to 12 carbon atoms containing oxygen, preferably a direct bond or a hydrocarbon group having 1 to 4 carbon atoms. . X, Y, and Z are organic groups, which may be the same or different. R ¹¹ is a hydrocarbon group having 1 to 6 carbon atoms or an organic group having 1 to 12 carbon atoms including oxygen, and n is 0. ~ 6. By adopting such a configuration, not only can a cured product of this product have sufficient mechanical strength, but also a sufficient flatness can be provided when the covering portion 22 is produced.

In the compound (B) having the structure represented by the general formula (5), the group Y which is an organic group is, for example, —C (CH ₃ ) ₂ —, —CH ₂ —, direct bond (dangling bond). , -COO-, -CONH-, etc., among which direct bonding, -COO-, or -CONH- is preferable. Examples of the group X and the group Z that are organic groups include —CO—, —C (CH ₃ ) ₂ —, —CH ₂ —, direct connection, —COO—, —CONH—, and the like. , -COO-, -CONH-, and preferably the same. The groups R ¹ and R ^{2 which} are organic groups are preferably epoxy groups, hydrocarbon groups having 1 to 12 carbon atoms, or organic groups having 1 to 12 carbon atoms including oxygen. Further preferred groups R ¹ and R ² of the general formula (5) have the structure of the following formula (6). These compounds (B) having the structure represented by the general formula (5) may be used alone or in combination of two or more. By using the compounds having these structures, when the covering portion 22 is produced, it is preferable because sufficient flatness and excellent mechanical strength can be imparted to the obtained covering portion 22. Furthermore, it is preferably used from the viewpoint of excellent compatibility of the resin composition with the solvent in the liquid material (varnish) containing the resin composition.

（式中、Ｒ^１２は、アルキル基である。）

(In the formula, R ¹² is an alkyl group.)

In addition, examples of the compound having the structure of the general formula (5) as the group R ¹ and the group R ² in the general formula (5) include 3-ethyl-3-phenoxymethyloxetane and 3-ethyl-3-cyclohexane. Siloxymethyloxetane, 3-ethyl-3-[(2-ethylhexyloxy) methyl] oxetane, 1,4-bis {[(3-ethyl-3-oxetanyl) methoxy] methyl} benzene, 4,4-bis [ (3-ethyl-3-oxetanyl) methoxy] biphenyl, phenol novolac oxetane and the like.

  Among these, 1,4-bis {[(3-ethyl-3-oxetanyl) methoxy] methyl} benzene, 4,4-bis [(3-ethyl-3-oxetanyl) methoxy] biphenyl, and phenol novolac oxetane 4,4-bis [(3-ethyl-3-oxetanyl) methoxy] biphenyl, isophthalic acid bis [(3-ethyl-3-oxetanyl) methyl] ester, and the like are particularly preferable.

  The content of the compound (B) having the structure represented by the general formula (5) in the resin composition is not particularly limited, but from the viewpoint of compatibility with the solvent in the liquid material containing the resin composition. The amount of the cyclic olefin polymer or its hydrogenated product (A) is preferably from 1 to 30 parts by weight, particularly preferably from 5 to 10 parts by weight.

  Moreover, the compound (C) which generate | occur | produces an acid is contained in the resin composition containing the compound (B) which has a structure shown by the polymer of a cyclic olefin or its hydrogenated product (A), and the following General formula (5) It is preferable.

  The compound (C) that generates an acid generates a Bronsted acid or a Lewis acid by light irradiation or heat. Specific examples include onium salts, halogen compounds, sulfates, and mixtures thereof. Examples of onium salts include diazonium salts, ammonium salts, iodonium salts, sulfonium salts, phosphates, arsonium salts, oxonium salts, and the like, so long as they are compounds capable of forming counter anions with the above onium salts. There is no limit. Examples of the counter anion include boric acid, arsonium acid, phosphoric acid, antimonic acid, sulfate, carboxylic acid and their halogen-substituted products.

  The acid generator of the onium salt is not particularly limited, and is triphenylsulfonium tetrafluoroborate, triphenylsulfonium hexafluoroborate, triphenylsulfonium tetrafluoroarsenate, triphenylsulfonium tetrafluorophosphate, triphenyl. Nylsulfonium tetrafluorosulfate, 4-thiophenoxydiphenylsulfonium tetrafluoroborate, 4-thiophenoxydiphenylsulfonium tetrafluoroantimonate, 4-thiophenoxydiphenylsulfonium tetrafluoroarsenate, 4-thiophenoxydiphenyl Sulfonium tetrafluorophosphate, 4-thiophenoxydiphenylsulfonium tetrafluorosulfonate, Lis (t-butylphenyl) sulphonium tetrakis (pentafluorophenyl) borate, 4-t-butylphenyldiphenylsulphonium tetrafluoroborate, 4-t-butylphenyldiphenylsulphonium tetrafluorosulphonate, 4-t -Butylphenyldiphenylsulfonium tetrafluoroantimonate, 4-t-butylphenyldiphenylsulfonium trifluorophosphonate, 4-t-butylphenyldiphenylsulfonium trifluorosulfonate, tris (4-methylphenyl) sulfone Phonium trifluoroborate, 4,4 ′, 4 ″ -tris (t-butylphenyl) sulfonium triflate, tris (4-methylphenyl) sulfonium tetrafluoroborate, tris 4-methylphenyl) sulfonium hexafluoroarsenate, tris (4-methylphenyl) sulfonium hexafluorophosphate, tris (4-methylphenyl) sulfonium hexafluorosulfonate, tris (4-methoxyphenyl) ) Sulfonium tetrafluoroborate, tris (4-methoxyphenyl) sulfonium hexafluoroantimonate, tris (4-methoxyphenyl) sulfonium hexafluorophosphate, tris (4-methoxyphenyl) sulfonium trifluoros Ruphonate, triphenylsulfonium diphenyliodonium tetrakis (pentafluorophenyl) borate, diphenyliodonium tetrakis (pentafluorophenyl) borate, tripheny Ruiodonium tetrafluoroborate, triphenyliodonium hexafluoroantimonate, triphenyliodonium hexafluoroarsenate, triphenyliodonium hexafluorophosphate, triphenyliodonium trifluorosulfonate, 3,3-dinitrodiphenyliodonium tetrafluoroborate, 3 , 3-dinitrodiphenyliodonium hexafluoroantimonate, 3,3-dinitrodiphenyliodonium hexafluoroarsenate, 3,3-dinitrodiphenyliodonium trifluorosulfonate, 4,4′-di-t-butylphenyliodonium triflate, 4,4′-di-t-butylphenyliodonium tetrakis (pentafluorophenyl) borate, 4,4 Dinitrodiphenyliodonium tetrafluoroborate, 4,4-dinitrodiphenyliodonium hexafluoroantimonate, 4,4-dinitrodiphenyliodonium hexafluoroarsenate, 4,4-dinitrodiphenyliodonium trifluorosulfonate, (4-methylphenyl-4 -(1-methylethyl) phenyliodonium tetrakis (pentafluorophenyl) borate and the like can be mentioned, and one or more of these can be used in combination.

  Examples of the acid generator containing halogen include 2,4,6-tris (trichloromethyl) triazine, 2-allyl-4,6-bis (trichloromethyl) triazine, α, β, α-tribromo. Methylphenylsulfone, α, α-2,3,5,6-hexachloroxylene, 2,2-bis (3,5-dibromo-4-hydroxyphenyl) -1,1,1,3,3,3-hexa Fluoroxylene, 1,1,1-tris (3,5-dibromo-4-hydroxyphenyl) ethane and the like can be mentioned, and one or more of these can be used in combination.

  Specific examples of the sulfonate-based acid generator include 2-nitrobenzyl tosylate, 2,6-dinitrobenzyl tosylate, 2,4-dinitrobenzyl tosylate, 2-nitrobenzyl methanesulfonate, 2- Nitrobenzyl ethanesulfonate, 9,10-dimethoxyanthracene-2-sulfonate, 1,2,3-tris (methanesulfonylloxy) benzene, 1,2,3-tris (ethanesulfonylloxy) benzene, 1,2, 3-tris (propanesulfonylloxy) benzene and the like can be mentioned, and one or more of these can be used in combination.

  Among the acid generators as described above, 4,4′-di-t-butylphenyliodonium triflate, 4,4 ′, 4 ″ -tris (t-butylphenyl) sulfonium triflate, diphenyliodonium tetrakis ( Pentafluorophenyl) borate, triphenylsulfonium diphenyliodonium tetrakis (pentafluorophenyl) borate, 4,4′-di-t-butylphenyliodonium tetrakis (pentafluorophenyl) borate, tris (t-butylphenyl) sulfonyltetrakis One or more selected from (pentafluorophenyl) borate, 4-methylphenyl-4- (1-methylethyl) phenyliodonium tetrakis (pentafluorophenyl) borate alone or a mixture thereof Used Mashiku.

  Further, the content of the compound (C) that generates acid in the resin composition is not particularly limited, but the action of the polymer of cyclic olefin or its hydrogenated product (A) and the compound (C) that generates acid. Is preferably from 0.1 to 20 parts by weight, particularly preferably from 0.5 to 10 parts by weight, based on a total of 100 parts by weight of the compound capable of curing reaction. When the content is in the above range, the opening shape after photo-resolution and the sensitivity (patterning property of the covering portion 22) are particularly excellent.

  The weight average molecular weight of the compound capable of undergoing a curing reaction by the action of the acid-generating compound (C) is not particularly limited, but is preferably 1000 or less, particularly preferably 100 to 600.

  Further, the compounding amount of the compound capable of undergoing a curing reaction by the action of the compound (C) that generates an acid is not particularly limited, but a polymer of a cyclic olefin having a photoreactive functional group or a hydrogenated product thereof ( A) It is preferable that it is 1-50 weight part with respect to 100 weight part, and 10-40 weight part is especially preferable.

  The resin composition as described above is usually used in the form of a liquid material (varnish) by dissolving the aforementioned components in a solvent.

  The solvent functions as a carrier for the resin composition, and includes a non-reactive solvent that is removed after coating on the first sheet material 25 ′ or in the curing process, and a reactive group that is compatible with the resin composition. A reactive solvent may be mentioned.

  The non-reactive solvent is not particularly limited, and examples include alkanes such as pentane, hexane, heptane, cyclohexane and decahydronaphthalene, cycloalkanes, and aromatics such as benzene, toluene, xylene and mesitylene. . If necessary, diethyl ethers, tetrahydrofuran, anisole, acetates, esters, lactones, ketones, amides, and the like can also be used.

The reactive solvent is not particularly limited, but is a cycloether compound such as cyclohexene oxide or α-pinene oxide, an aromatic cycloether such as [methylenebis (4,1-phenyleneoxymethylene)] bisoxirane, 1 And cycloaliphatic vinyl ether compounds such as 4-cyclohexanedimethanol divinyl ether and aromatics such as bis (4-vinylphenyl) methane.
Among these, mesitylene, decahydronaphthalene, and 2-heptanone are preferable from the viewpoint of applicability of the resin composition to the first sheet material 25 ′.

  The liquid material containing a resin composition containing a polymer of cyclic olefin or a hydrogenated product thereof (A) and a compound (B) having a structure represented by the following general formula (4) has a solid content concentration of 5 It is preferably ˜60 wt%, particularly preferably 30 to 55 wt%, and the viscosity is preferably 10 to 25000 mPa · s, particularly preferably 100 to 3000 mPa · s. By setting the amount within the above range, it is possible to ensure applicability to the first sheet material 25 ′.

  [8] Next, as shown in FIG. 4D, the lower surface of the sealing portion 27 is ground and / or polished until the end portion on the lower surface side of the conductor column 28 is exposed (grinding / polishing step). .

  As a result, the conductor pillars 28 functioning as terminals electrically connected to the bumps 11 included in the package 10 are exposed on the upper surface side of the package 20 to be formed.

  The sealing portion 27 can be ground and / or polished using, for example, a grinder provided in a grinding device (grinder).

  [9] Next, as shown in FIG. 4E, the bump 21 is formed so as to be electrically connected to the wiring 23 exposed from the opening 221 (bump connection step).

  Here, as in the present embodiment, the connection between the conductor post 24 and the bump 21 is performed via the wiring 23, so that the bump 21 is connected to the conductor in the surface direction of the first sheet material 25 ′. The post 24 can be arranged at a different position. In other words, the bumps 21 and the conductor posts 24 can be arranged so that the central portions do not overlap. Therefore, since the bump 21 can be formed at a desired position on the lower surface of the package 20 to be obtained, the range of selection of the type of substrate on which the package 20 is laminated is widened. In addition, the number of output pins of the package can be increased.

  A method for bonding the bump 21 to the wiring 23 is not particularly limited. For example, the bump 21 is bonded by a viscous flux between the bump 21 and the wiring 23.

  In addition, examples of the constituent material of the bump 21 include a solder material such as solder, silver solder, copper solder, and phosphor copper solder.

  [10] Next, as shown in FIG. 4F, a plurality of packages are obtained by separating the semiconductor element sealing body 270 provided with the cover 22 so as to correspond to each semiconductor element 26. 20 is obtained collectively (individualization step).

  For example, the semiconductor element sealing body 270 is separated into pieces by using a dicing saw in the thickness direction of the semiconductor element sealing body 270, for example, the sealing portion 27, the second sheet material 29 ′, and the first sheet. This can be done by cutting the material 25 ′ and the covering portion 22.

The package 20 is manufactured through the above processes.
According to such a manufacturing method of the package 20, in the step [2], the through-hole 251 is directly formed in the first sheet material 25 ′ where the semiconductor element 26 is arranged. In the step [5], Conductor posts 24 are formed in the through holes 251. Therefore, unlike the semiconductor package manufacturing method described in the background art, it is not necessary to remove the semiconductor element sealing body from the dummy substrate and further form a coating layer for forming the conductor post on the semiconductor element sealing body. Therefore, since the number of processes can be reduced when a plurality of semiconductor packages are manufactured at once, the productivity of the semiconductor package can be improved.

  Further, in the step [3], the semiconductor element 26 is exposed in the filling portion 291 so that the electrode pad included in the semiconductor element 26 corresponds to the through-hole 251 formed in the first sheet material 25 ′ in advance. Since it is disposed on the first sheet material 25 ′, it is possible to accurately suppress or prevent impurities such as an adhesive from adhering to the electrode pad, and thus a highly reliable semiconductor package is manufactured. be able to.

  The semiconductor device 30 manufactured by the method for manufacturing a semiconductor element encapsulant of the present invention and the method for manufacturing a semiconductor package of the present invention includes, for example, a mobile phone, a digital camera, a video camera, a car navigation system, a personal computer, and a game machine. It can be widely used for liquid crystal televisions, liquid crystal displays, organic electroluminescence displays, printers and the like.

  As mentioned above, although the manufacturing method of the semiconductor element sealing body of this invention and the manufacturing method of the semiconductor package of this invention were demonstrated, this invention is not limited to these.

  For example, in the above-described embodiment, the case where the package 10 and the package 20 each include one semiconductor element 16 and the semiconductor element 26 has been described. However, the present invention is not limited to such a case. The same or different semiconductor elements may be provided. With this configuration, the packages 10 and 20 can be enhanced in function and multifunction.

  Further, in the above-described embodiment, the case where the semiconductor package manufacturing method of the present invention is applied to the manufacture of a POP (Package On Package) type semiconductor device 30 has been described. In addition, for example, the present invention can be applied to the manufacture of a CSP (Chip Stacked Package) type semiconductor device, a BGA (Ball Grid Array) type semiconductor device, an FBGA (Fine Pitch Ball Grid All) type semiconductor device, and the like. Passive components such as capacitors and resistors can be mounted on these PKGs.

  In addition, one or more processes for any purpose may be added to the method for manufacturing a sealed semiconductor element according to the present invention and the method for manufacturing a semiconductor package according to the present invention.

10, 20 Package 11, 21 Bump 12, 22 Covering part 121, 221 Opening part 13, 23 Wiring 14, 24 Conductor post 15, 25 Interposer 151, 251 Through hole 16, 26 Semiconductor element 17, 27 Sealing part 200 Lamination Body 232, 242 Mask 241 Seed layer 25 ′ First sheet material 270 Semiconductor element sealing body 28 Conductor column 29 Laminated plate 29 ′ Second sheet material 291 Filling section 30 Semiconductor device 501 Vibration feeder 502 Resin material supply container 503 Epoxy Resin composition 504 Lower mold cavity 600 Semiconductor package 601 Dummy substrate 602 Adhesive layer 610 Sealing body 611 Bump 612 Second covering layer 613 Wiring 614 Conductor post 615 First covering layer 616 Semiconductor element 617 Sealing section 622 Opening section 625 Through hole

Claims (6)

A first sheet material in which a plurality of through holes are formed; a plurality of conductor pillars; and a plurality of filling portions; a second sheet material laminated on the first sheet material; A method for producing a semiconductor element sealing body having a plurality of semiconductor elements having at least one electrode pad disposed on the sheet material and a sealing portion for sealing the semiconductor elements,
The first sheet material having a flat plate shape, and the second sheet material having the plurality of conductor columns provided so as to penetrate in the thickness direction and the plurality of filling portions opened in the thickness direction. A laminated body forming step of preparing a laminated body;
A through-hole forming step of forming a plurality of through-holes in the thickness direction of the first sheet material so as to correspond to the conductor columns and the positions where the electrode pads are to be disposed;
A semiconductor element disposing step of disposing a plurality of the semiconductor elements on the first sheet material exposed in the filling portion so that the electrode pads correspond to the through holes;
A sealing part for obtaining the semiconductor element sealing body by sealing the inside of the filling part in which the semiconductor element is disposed so as to cover the first sheet material and the semiconductor element to form a sealing part A method for producing a sealed semiconductor element, comprising: a forming step.   In the sealing part forming step, the sealing part covers the first sheet material, the second sheet material, and the semiconductor element in a state where the granular epoxy resin composition is melted. The manufacturing method of the semiconductor element sealing body of Claim 1 formed by compressing and molding this molten epoxy resin composition after supplying to the surface by which the semiconductor element is arrange | positioned. A conductor post forming step of preparing a semiconductor element sealing body manufactured by the method for manufacturing a semiconductor element sealing body according to claim 1 or 2, and forming a conductive post having conductivity in the through hole;
A wiring forming step of forming a wiring electrically connected to the conductor post on the surface of the sheet material opposite to the semiconductor element;
A covering portion forming step of forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element;
A grinding / polishing step of grinding and / or polishing a surface of the sealing portion opposite to the first sheet material until an end of the conductor post opposite to the first sheet material is exposed;
A bump connection step of electrically connecting the bump to the wiring exposed in the opening;
A method for manufacturing a semiconductor package, comprising: a step of individually obtaining a plurality of semiconductor packages by dividing the semiconductor element sealing body into pieces so as to correspond to each semiconductor element. .   The method of manufacturing a semiconductor package according to claim 3, wherein, in the conductor post forming step, the conductor post is formed by an electroplating method.   5. The method of manufacturing a semiconductor package according to claim 3, wherein in the wiring formation step, the wiring is formed by an electroplating method.   The method of manufacturing a semiconductor package according to claim 3, wherein the conductor post and the bump are formed at different positions in the surface direction of the sheet material.

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