JP5007296B2 - パワーモジュール用ベース - Google Patents
パワーモジュール用ベース Download PDFInfo
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- JP5007296B2 JP5007296B2 JP2008505084A JP2008505084A JP5007296B2 JP 5007296 B2 JP5007296 B2 JP 5007296B2 JP 2008505084 A JP2008505084 A JP 2008505084A JP 2008505084 A JP2008505084 A JP 2008505084A JP 5007296 B2 JP5007296 B2 JP 5007296B2
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- heat dissipation
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- heat
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- 239000000758 substrate Substances 0.000 claims description 259
- 230000017525 heat dissipation Effects 0.000 claims description 149
- 229910052782 aluminium Inorganic materials 0.000 claims description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims description 2
- 230000035882 stress Effects 0.000 description 58
- 230000002093 peripheral effect Effects 0.000 description 22
- 238000005219 brazing Methods 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 15
- 239000002826 coolant Substances 0.000 description 12
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 230000008602 contraction Effects 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004745 nonwoven fabric Substances 0.000 description 3
- 239000002759 woven fabric Substances 0.000 description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 2
- 229910018566 Al—Si—Mg Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000010273 cold forging Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
放熱基板における絶縁基板が接合された側の面に、放熱基板よりも厚肉でかつ絶縁基板を通す貫通穴を有する部品取付板が、絶縁基板が貫通穴内に位置するように接合されているパワーモジュール用ベース。
13)応力緩和部材が、絶縁基板の線膨張係数と放熱基板の線膨張係数との間の線膨張係数を有する材料からなる上記10)記載のパワーモジュール用ベース。
16)部品取付板上に取り付けられ、かつパワーモジュール用ベースの絶縁基板およびパワーデバイスを覆うケーシングを備えている上記15)記載のパワーモジュール。
Claims (16)
- 高熱伝導性材料からなる放熱基板と、放熱基板の一面に接合された絶縁基板と、絶縁基板における放熱基板に接合された側と反対側の面に設けられた配線層と、放熱基板の他面に接合された放熱フィンとを備えているパワーモジュール用ベースであって、
放熱基板における絶縁基板が接合された側の面に、放熱基板よりも厚肉でかつ絶縁基板を通す貫通穴を有する部品取付板が、絶縁基板が貫通穴内に位置するように接合されているパワーモジュール用ベース。 - 放熱基板における放熱フィンが接合された側の面に、放熱フィンを覆うように冷却ジャケットが固定されており、冷却ジャケット内を冷却液が流れるようになされている請求項1記載のパワーモジュール用ベース。
- 絶縁基板と放熱基板、放熱基板と放熱フィン、および放熱基板と部品取付板とがそれぞれろう付されている請求項1または2記載のパワーモジュール用ベース。
- 冷却ジャケットにおける放熱基板と対向する壁部分の外面に、下側部品取付板が接合されている請求項1〜3のうちのいずれかに記載のパワーモジュール用ベース。
- 両部品取付板が相互に結合されている請求項4記載のパワーモジュール用ベース。
- 絶縁基板における配線層が設けられた側とは反対側の面に、高熱伝導性材料からなる伝熱層が設けられ、伝熱層と放熱基板とが接合されている請求項1〜5のうちのいずれかに記載のパワーモジュール用ベース。
- 絶縁基板における配線層が設けられた側とは反対側の面と、放熱基板とが直接接合されている請求項1〜5のうちのいずれかに記載のパワーモジュール用ベース。
- 絶縁基板がセラミックスにより形成されており、当該セラミックスが窒化アルミニウム、酸化アルミニウムまたは窒化ケイ素からなる請求項1〜7のうちのいずれかに記載のパワーモジュール用ベース。
- 配線層がアルミニウムまたは銅からなる請求項1〜8のうちのいずれかに記載のパワーモジュール用ベース。
- 絶縁基板と放熱基板との間に、高熱伝導性材料からなる応力緩和部材が介在させられ、応力緩和部材が、絶縁基板および放熱基板に接合されている請求項1〜9のうちのいずれかに記載のパワーモジュール用ベース。
- 応力緩和部材が、複数の貫通穴が形成された板状体からなる請求項10記載のパワーモジュール用ベース。
- 応力緩和部材が、板状本体と、板状本体の少なくとも一面に相互に間隔をおいて一体に形成された複数の突起とからなる請求項10記載のパワーモジュール用ベース。
- 応力緩和部材が、絶縁基板の線膨張係数と放熱基板の線膨張係数との間の線膨張係数を有する材料からなる請求項10記載のパワーモジュール用ベース。
- 応力緩和部材が、多孔質性材料からなる請求項10記載のパワーモジュール用ベース。
- 請求項1〜14のうちのいずれかに記載のパワーモジュール用ベースと、パワーモジュール用ベースの絶縁基板の配線層上に装着されたパワーデバイスとを備えているパワーモジュール。
- 部品取付板上に取り付けられ、かつパワーモジュール用ベースの絶縁基板およびパワーデバイスを覆うケーシングを備えている請求項15記載のパワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008505084A JP5007296B2 (ja) | 2006-03-13 | 2007-03-08 | パワーモジュール用ベース |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006067223 | 2006-03-13 | ||
JP2006067223 | 2006-03-13 | ||
JP2008505084A JP5007296B2 (ja) | 2006-03-13 | 2007-03-08 | パワーモジュール用ベース |
PCT/JP2007/054503 WO2007105580A1 (ja) | 2006-03-13 | 2007-03-08 | パワーモジュール用ベース |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007105580A1 JPWO2007105580A1 (ja) | 2009-07-30 |
JP5007296B2 true JP5007296B2 (ja) | 2012-08-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008505084A Active JP5007296B2 (ja) | 2006-03-13 | 2007-03-08 | パワーモジュール用ベース |
Country Status (6)
Country | Link |
---|---|
US (2) | US8102652B2 (ja) |
EP (1) | EP2003691B1 (ja) |
JP (1) | JP5007296B2 (ja) |
KR (1) | KR101384426B1 (ja) |
CN (1) | CN101443904B (ja) |
WO (1) | WO2007105580A1 (ja) |
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JP5070014B2 (ja) * | 2007-11-21 | 2012-11-07 | 株式会社豊田自動織機 | 放熱装置 |
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JP5023020B2 (ja) | 2008-08-26 | 2012-09-12 | 株式会社豊田自動織機 | 液冷式冷却装置 |
JP5061065B2 (ja) * | 2008-08-26 | 2012-10-31 | 株式会社豊田自動織機 | 液冷式冷却装置 |
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- 2007-03-08 JP JP2008505084A patent/JP5007296B2/ja active Active
- 2007-03-08 EP EP07737994.9A patent/EP2003691B1/en not_active Not-in-force
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Also Published As
Publication number | Publication date |
---|---|
EP2003691A2 (en) | 2008-12-17 |
US8102652B2 (en) | 2012-01-24 |
CN101443904B (zh) | 2010-11-10 |
JPWO2007105580A1 (ja) | 2009-07-30 |
WO2007105580A1 (ja) | 2007-09-20 |
CN101443904A (zh) | 2009-05-27 |
EP2003691A9 (en) | 2009-04-22 |
EP2003691B1 (en) | 2019-01-09 |
US20120113598A1 (en) | 2012-05-10 |
US8824144B2 (en) | 2014-09-02 |
US20100002397A1 (en) | 2010-01-07 |
EP2003691A4 (en) | 2015-04-22 |
KR101384426B1 (ko) | 2014-04-10 |
KR20090010166A (ko) | 2009-01-29 |
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