JP5098452B2 - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device excellent in productivity and a substrate used for manufacturing the semiconductor device. <P>SOLUTION: The substrate for manufacturing the semiconductor device is prepared by forming pad parts 2 and terminal parts 3 for a plurality of semiconductor devices, as plating layers, on both sides of a metal sheet 1 of stainless steel. A plurality of semiconductor elements 4 are mounted on the pad parts 2 and connected to the terminal parts 3 by bonding wires 5 and then resin sealing bodies 6 are so molded as to have space parts between flange parts 6a of peripheral parts and the metal sheet 1. Then, by inserting an implement or the like into the space parts thereafter, the resin sealing bodies 6 in a state of having the semiconductor elements 4 sealed therein are peeled off, together with the pad parts 2 and the terminal parts 3, from the metal sheet 1 and cut, so as to obtain the separate semiconductor devices. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device having a terminal portion formed of a plating layer on the bottom side of a resin-sealed semiconductor device.

  Some semiconductor devices are made by sealing a semiconductor element with a resin, and forming a terminal portion with a metal film on the bottom surface of the sealing body (package). First, a substrate for manufacturing a semiconductor device in which a plurality of plating layers to be terminal portions or pad portions for individual semiconductor devices are formed on one side of a metal plate is manufactured, and a plurality of substrates are formed there. After mounting the semiconductor element and connecting it to the terminal portion with a bonding wire, a plurality of semiconductor elements are resin-sealed by molding, and then the resin sealing body from which only the metal plate has been removed is cut, A method for obtaining a semiconductor device is known.

  In addition, it is known that a copper alloy metal plate is conventionally used as the metal plate of such a substrate for manufacturing a semiconductor device. In that case, when removing the metal plate from the resin sealing body, The metal plate was dissolved by etching. Patent Document 1 below describes that a stainless steel metal plate is used as the metal plate of the semiconductor device manufacturing substrate. In this case, when removing the metal plate, the metal plate is peeled off from the resin sealing body that is in close contact.

JP 2006-196922 A

  In the case where a copper alloy is used for the metal plate serving as the base of the semiconductor device manufacturing substrate, when the metal plate is removed, it is dissolved by etching as described above. However, such an etching process is not only time consuming but also requires equipment, which increases costs and is undesirable in production. On the other hand, when stainless steel is used for the metal plate, it takes only a short time because it peels off. Instead, the resin sealing body is in close contact with the metal plate, making the peeling work cumbersome. There is a point. And when peeling a metal plate and a resin sealing body as well as stainless steel, the metal plate is warped in the peeling process, it is difficult to reuse, and the productivity is also difficult. is there.

  The present invention has been made to solve such problems, and the object of the present invention is to seal a plurality of semiconductor elements on a substrate for manufacturing a semiconductor device, and then to seal the plurality of semiconductor elements. It is an object of the present invention to provide a method for manufacturing a semiconductor device in which the sealed resin sealing body and the metal plate of the substrate for manufacturing a semiconductor device can be easily peeled off. In addition, by forming plating layers that serve as terminal portions for a plurality of semiconductor devices on both surfaces of the metal plate, it is possible to manufacture a semiconductor device twice as much as before with a single metal plate. It is providing the board | substrate for semiconductor device manufacture which contributes to improvement of this.

In order to achieve the above object, a semiconductor device manufacturing method of the present invention includes a plurality of semiconductor elements on a semiconductor device manufacturing substrate in which a plurality of terminal portions for a semiconductor device and the like are formed as plating layers on the surface of a metal plate. And connecting the semiconductor element and the terminal part with a bonding wire, and then forming the plurality of semiconductor elements such that at least a part of the peripheral part has a space between the semiconductor device manufacturing substrate. Molding a resin sealing body for sealing, and then inserting a finger or a jig into the space, and peeling the resin sealing body in a state of sealing the semiconductor element from the metal plate Cut to obtain individual semiconductor devices.

In order to achieve the above object, another method of manufacturing a semiconductor device according to the present invention is a semiconductor device in which a plurality of terminal portions for a semiconductor device are formed as plating layers on both surfaces of a metal plate. After mounting a plurality of semiconductor elements on one side on a manufacturing substrate and connecting the semiconductor elements and the terminal portion with bonding wires, at least a part of the peripheral portion is a space between the semiconductor device manufacturing substrate. Forming a resin sealing body for sealing the plurality of semiconductor elements so as to have a portion on both surfaces of the metal plate, and then inserting a finger or a jig into each space portion, The resin sealing body with the semiconductor element sealed is peeled off from the metal plate and cut to obtain individual semiconductor devices.

  And in those manufacturing methods, the said board | substrate for semiconductor device manufacture forms the said plating layer for each semiconductor device in the matrix form, dividing into the several area | region on one surface, respectively. You may make it a sealing body shape | mold for every those area | regions.

  According to the manufacturing method of the present invention, in the process of resin-sealing a plurality of semiconductor elements on a semiconductor device manufacturing substrate, a space is formed between the metal plate of the semiconductor device manufacturing substrate and the resin sealing body. As a result, when peeling the resin-sealed body that is resin-sealed with a plurality of semiconductor elements and the metal plate of the semiconductor device manufacturing substrate, insert a finger or an appropriate tool into the space. Thus, both can be easily peeled off. In addition, by realizing a semiconductor device manufacturing substrate in which plating layers to be terminal portions for a semiconductor device are formed on both surfaces of a metal plate, a single semiconductor device manufacturing substrate can double the number of semiconductor devices. Manufacturing becomes possible.

  In carrying out the manufacturing method of the present invention, it is first necessary to manufacture a semiconductor device manufacturing substrate. As an example, a stainless steel metal plate having a thickness of about 0.1 to 0.3 mm is prepared, and a plurality of terminal portions and pad portions for a semiconductor device are formed on the surface with a plating layer. A mask is formed with a resist leaving an area to be processed. Then, the metal plate on which the mask is formed is pre-processed to form a plating layer, and then the resist used as the mask is removed and post-processing is performed to form the terminal portion and the pad portion on the metal plate as the plating layer. The formed semiconductor device manufacturing substrate is obtained. In addition, although such a plating layer may be formed only on one side of the metal plate as in the prior art, productivity is dramatically improved by forming it on both sides.

  Next, a plurality of semiconductor elements are mounted on the pad portion of the semiconductor device manufacturing substrate manufactured as described above, and an assembly process of performing wire bonding or the like between the terminal portion and the resin sealing is performed. . At this time, a space is formed between a part of the periphery of the resin sealing body and the metal plate, and the space is formed by a mold shape for resin sealing. Further, when the substrate for manufacturing a semiconductor device has a plated layer formed on both sides, the above assembling process is performed on both sides, and the resin sealing body is simultaneously formed on both sides. After the resin sealing body is molded in this manner, a plating layer (terminal portion, pad portion) is removed by inserting and hooking a jig into the space and peeling the resin sealing body from the metal plate. A resin sealing body in which a plurality of semiconductor elements are integrated and sealed is obtained. Each resin device is obtained by cutting the resin sealing body with a dicing saw.

  Therefore, in the following, an example of a manufacturing method of a semiconductor device manufacturing substrate in which plating layers are formed on both surfaces of a metal plate and a manufacturing method of a semiconductor device using the semiconductor device manufacturing substrate will be described with reference to the drawings. This will be specifically described. FIG. 1 is a plan view showing a semiconductor device manufacturing substrate in the embodiment, and FIG. 2 is a partial cross-sectional view showing a state where a resin sealing body is molded on both surfaces of the semiconductor device manufacturing substrate. FIG. 3 is a partial cross-sectional view showing a state when the resin sealing body and the metal plate are peeled off.

  First, as a raw material of the metal plate 1 of the present example, stainless steel (SUS430) having a plate thickness of 0.2 mm and a width of 100 mm was used. And after performing the degreasing | defatting and acid cleaning of the surface of such stainless steel, the photosensitive dry film resist of thickness 0.025mm was affixed on the both surfaces with the lamination roll. Next, the area where the plating layer is to be formed later is blackened, and a glass mask with the other parts made transparent is placed on the dry film resist. A mask pattern was prepared on the dry film resist. Next, development processing was performed using a sodium carbonate solution, and an uncured dry film resist that was not exposed due to the irradiation of ultraviolet light was dissolved to obtain a material for forming a plating layer.

  Next, as a pretreatment for forming the plating layer, both surfaces of the stainless steel were sufficiently activated by electrolytic treatment with 3 mol / L hydrochloric acid after immersion in alkali. Thereafter, 1 μm of gold plating was immediately applied, 10 μm of nickel plating was applied thereon, and 3 μm of gold plating was further applied thereon. Finally, after removing the dry film resist with a sodium hydroxide solution, washing with water and drying, the length of the long material is cut to about 200 mm, as shown in FIG. In addition, a semiconductor device substrate having a plating layer with exactly the same pattern on both surfaces was obtained.

  FIG. 1 shows one surface of a substrate for a semiconductor device. In the case of this embodiment, a 0.3 mm square terminal portion is formed around a plating layer that becomes a 3 mm square pad portion 2 in the center. The number of plating layers that are 3 is 28 (small and cannot be shown individually, so 7 are shown by solid lines) are divided into two regions in the length direction of the metal plate 1 and the width 40 sets are formed in a matrix form within the center 50 mm in the direction. Although the plating layer of this embodiment is formed as described above, it may be formed on a gold, nickel, silver plating layer sequentially from the surface side of the metal plate 1, or gold, palladium, nickel palladium. The gold plating layer may be formed. In any case, the thickness of the plating layer is preferably 10 to 100 μm.

  Next, the semiconductor element 4 is mounted on each pad portion 2 of the semiconductor device substrate manufactured as described above, and the terminal portion 3 is connected by the bonding wire 5. The assembly process of No. 4 was performed one side at a time. Thereafter, the resin sealing body 6 having a rectangular planar shape was simultaneously molded on the front and back of the metal plate 1 by one mold. FIG. 2 is a cross-sectional view of a part after the forming process. In the case of this example, as can be seen from the formation state of the plating layer shown in FIG. Since 40 plating layers are divided into two regions and formed, four such resin sealing bodies 6 are formed on the front and back sides. As shown in FIG. 2, each resin sealing body 6 is formed with a flange portion 6 a at a part of its peripheral portion, and a space portion is formed between the flange portion 6 a and the metal plate 1. Was formed.

  In the case of this embodiment, 80 plating layers are formed in two regions for each side, but a plating layer may be formed between the two regions. In such a case, the resin sealing body 6 is one per side. In that case, it is also conceivable to form the flange portion 6a over the entire circumference of the resin sealing body 6 by a mold. In addition, as in the present embodiment, a plurality of plating layers are not formed in two regions, but three or more depending on the length of the metal plate 1 and the size / quantity of the semiconductor element 4. It is also possible to form the region.

  In this way, after the state shown in FIG. 2 is obtained, a jig is inserted into the space between the metal plate 1 and the flange portion 6a and hooked on the flange portion 6a. The metal plate 1 was peeled off. As a result, each plating layer was also peeled off from the metal plate 1 together with the resin sealing body 6 that sealed the semiconductor element 4. However, in this example, since the stainless steel is used for the metal plate 1, The adhesion was weak and could be peeled off easily. FIG. 3 shows a case where the two resin sealing bodies 6 are peeled off simultaneously on both surfaces of the metal plate 1 as described above. Then, the individual semiconductor device was obtained by cut | disconnecting the peeled resin sealing body 6 with a dicing saw. And when the solder wettability of the plating surface of a terminal part was confirmed with the molten solder, it was able to be soldered cleanly over the entire area of the gold plating surface.

  In addition, although the Example demonstrated the case where the semiconductor element 4 was assembled | attached on both surfaces of the board | substrate for one semiconductor device manufacture, the manufacturing method of the semiconductor device of this invention is not limited to such a method, It is only on one side. The semiconductor element 4 may be assembled. In this case, as a substrate for manufacturing a semiconductor device, it is needless to say that a substrate having a plating layer formed only on one side is used. However, once the metal plate 1 is used, warping occurs in the above-described peeling process and it cannot be reused. Therefore, it is much more productive to assemble the semiconductor element 4 on both sides as in the embodiment. Improves.

It is the top view which showed the board | substrate for semiconductor device manufacture in an Example. It is a fragmentary sectional view which shows the state by which the resin sealing body was shape | molded on both surfaces of the board | substrate for semiconductor device manufacture. It is a fragmentary sectional view which shows a state when a resin sealing body and a metal plate are peeled.

DESCRIPTION OF SYMBOLS 1 Metal plate 2 Pad part 3 Terminal part 4 Semiconductor element 5 Bonding wire 6 Resin sealing body 6a Flange part

Claims (3)

After mounting a plurality of semiconductor elements on a substrate for manufacturing a semiconductor device in which a plurality of terminal portions for a semiconductor device are formed as plating layers on the surface of a metal plate and connecting the semiconductor elements and the terminal portions with bonding wires Forming a resin sealing body for sealing the plurality of semiconductor elements in such a manner that at least a part of the peripheral portion has a space between the semiconductor device manufacturing substrate and then forming the space in the space A semiconductor device, wherein a finger or a jig is inserted, and the resin sealing body in a state where the semiconductor element is sealed is peeled off from the metal plate and cut to obtain individual semiconductor devices. Manufacturing method. A plurality of semiconductor elements are mounted on each side of a semiconductor device manufacturing substrate in which a plurality of terminal portions for semiconductor devices are formed as plating layers on both surfaces of the metal plate. A resin sealing body for sealing the plurality of semiconductor elements such that at least a part of the peripheral portion has a space between the substrate and the substrate for manufacturing a semiconductor device. Molded on both surfaces of the metal plate, and then insert a finger or a jig into each of the space portions, the resin sealing body in a state of sealing the semiconductor element is peeled from the metal plate and cut, A method of manufacturing a semiconductor device, characterized in that individual semiconductor devices are obtained.   The substrate for manufacturing a semiconductor device is formed by dividing the plating layer for each semiconductor device into a plurality of regions on one surface, each in a matrix, and the resin encapsulant is formed for each of the regions. The method of manufacturing a semiconductor device according to claim 1, wherein the method is formed into a shape.

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